CN202214446U - Protector used for preventing silicon liquid from splashing - Google Patents
Protector used for preventing silicon liquid from splashing Download PDFInfo
- Publication number
- CN202214446U CN202214446U CN2011203150483U CN201120315048U CN202214446U CN 202214446 U CN202214446 U CN 202214446U CN 2011203150483 U CN2011203150483 U CN 2011203150483U CN 201120315048 U CN201120315048 U CN 201120315048U CN 202214446 U CN202214446 U CN 202214446U
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- Prior art keywords
- splashing
- protector
- protective cover
- silicon
- silicon liquid
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
The utility model is applied to electronic and photovoltaic industries, and relates to a protector used for preventing silicon liquid from splashing. The protector is characterized by structurally comprising a protective cover made of quartz, and a protective cover connecting rod, wherein the inner and outer surfaces of a cover body of the protective cover are semi-spherical-shaped, and a support plate is fixedly arranged at the center of the outer surface of the cover body and is assembled with the protective cover connecting rod by a connecting pin. In the protector, a quartz cover is adopted as the protective cover for preventing the silicon liquid from splashing so as to effectively ameliorate the influence caused by the splashing of silicon material during material falling; and as the reflectivity of quartz is higher, thermal radiation can be effectively reflected, thereby realizing a good thermal insulation effect, reducing the heating power, and keeping the temperature to be uniform during material melting.
Description
Technical field
The utility model relates to and is used to the protector that prevents that silicon liquid from splashing, and particularly a kind of usefulness is used for the protection that Large-Diameter Czochralski Silicon material process silicon material splashes.
Background technology
In industry fields such as electronics, photovoltaic, the application of silicon crystal has become Development Trend.Vertical pulling (CZ) method is to be the main method of monocrystalline silicon growing at present; In growth large diameter silicon monocrystal process; Along with the increase of charging capacity, the silicon material collapses and expects that the splash phenomena that is produced is also more and more obvious in changing the material process, and small silicon grain brings very big uncertainty to crystal growth.
In the process that draws the small dia silicon single-crystal, because thermal field is less, charging capacity is less, and it is less that the silicon material turns over the low-priced influence that causes when in the process of changing material, collapsing material, can not cause great effect to crystal pulling basically.But in the growth large diameter silicon monocrystal, because the thermal field size is bigger, to turn over the low-priced influence that causes bigger for the silicon material when in the process of changing material, collapsing material, and crystal growth is produced considerable influence.Known splashproof silicon method is the liftable heat shielding of an employing mechanism, when changing material, heat shielding is risen, and changes and heat shielding is put down after material finishes again, and this has improved the power of changing material to a certain extent, has also increased the complicacy of single crystal growing furnace and supporting thermal field.
The utility model content
The utility model technical issues that need to address provide and a kind ofly can when silicon liquid melts, prevent the protector that silicon liquid splashes.
For solving the problems of the technologies described above, the technical scheme that the utility model is taked is:
A kind of protector of preventing that silicon liquid from splashing of being used to; Comprise in its structure and comprise shield cap and the shield cap union lever of processing by quartz in its structure; The inside and outside surface of the cover body of described shield cap is hemispherical; On the outside surface central position of cover body, be fixed with back up pad, back up pad is equipped with through joint pin and shield cap union lever.
Wherein, described shield cap union lever is made up of the body of rod and connecting joint one, is provided with connecting hole in the upper end of the body of rod, has draw-in groove in the end of connecting joint, on the connecting joint of draw-in groove both sides, offers corresponding following connecting hole.
Owing to adopted technique scheme, the technical progress that the utility model is obtained is:
The utility model adopts the guard shield of quartz cover as splashproof silicon, can improve effectively that the silicon material turns over the low-priced influence that causes when collapsing material, because quartzy reflectivity is higher; Can the usable reflection thermal radiation; Thereby play good heat insulation effect, reduce heating power, temperature is even during the maintenanceization material.
Description of drawings
Fig. 1 is the structural representation of the utility model;
Fig. 2 is the shield cap union lever structural representation of the utility model.
Embodiment
Below in conjunction with accompanying drawing the utility model is explained further details:
As depicted in figs. 1 and 2; The utility model a kind of is used to prevent the shield cap 1 and shield cap union lever 2 that protector that silicon liquid splashes is processed by quartz; The inside and outside surface of the cover body of described shield cap 1 is hemispherical; On the outside surface central position of cover body, be fixed with back up pad 3, back up pad 3 is equipped with through joint pin 4 and shield cap union lever 2.Wherein, described shield cap union lever 2 is made up of the body of rod 5 and connecting joint 6 one, is provided with connecting hole 8 in the upper end of the body of rod 5, has draw-in groove 7 in the end of connecting joint 6, on the connecting joint 6 of draw-in groove 7 both sides, offers corresponding following connecting hole 9.
In the time of in the process of polycrystallization material, the wireline of single crystal growing furnace lifting mechanism is connected with the last connecting hole 8 of shield cap union lever, slowly drops to silicon material top; The vertical centering of entire mechanism; And fully contact with silicon liquid level, play insulation effect on the one hand, on the other hand when the material that collapses spatters silicon; Shield cap can effectively stop splashing of silicon material, thereby improves the safety of crystal pulling process.
Claims (2)
1. one kind is used to the protector that prevents that silicon liquid from splashing; It is characterized in that: comprise shield cap and the shield cap union lever processed by quartz in its structure; The inside and outside surface of the cover body of described shield cap is hemispherical; On the outside surface central position of cover body, be fixed with back up pad, back up pad is equipped with through joint pin and shield cap union lever.
2. a kind of protector of preventing that silicon liquid from splashing of being used to according to claim 1; It is characterized in that: described shield cap union lever is made up of the body of rod and connecting joint one; Be provided with connecting hole in the upper end of the body of rod; End at connecting joint has draw-in groove, on the connecting joint of draw-in groove both sides, offers corresponding following connecting hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203150483U CN202214446U (en) | 2011-08-26 | 2011-08-26 | Protector used for preventing silicon liquid from splashing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203150483U CN202214446U (en) | 2011-08-26 | 2011-08-26 | Protector used for preventing silicon liquid from splashing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202214446U true CN202214446U (en) | 2012-05-09 |
Family
ID=46013708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011203150483U Expired - Fee Related CN202214446U (en) | 2011-08-26 | 2011-08-26 | Protector used for preventing silicon liquid from splashing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202214446U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104593863A (en) * | 2015-01-05 | 2015-05-06 | 英利集团有限公司 | Single-crystal furnace |
| CN105358743A (en) * | 2013-06-27 | 2016-02-24 | 信越半导体株式会社 | Single crystal production device and single crystal production method |
-
2011
- 2011-08-26 CN CN2011203150483U patent/CN202214446U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105358743A (en) * | 2013-06-27 | 2016-02-24 | 信越半导体株式会社 | Single crystal production device and single crystal production method |
| US9738989B2 (en) | 2013-06-27 | 2017-08-22 | Shin-Etsu Handotai Co., Ltd. | Single-crystal manufacturing apparatus and method of manufacturing single crystal |
| CN105358743B (en) * | 2013-06-27 | 2017-11-24 | 信越半导体株式会社 | Single-crystal manufacturing apparatus and monocrystalline manufacture method |
| CN104593863A (en) * | 2015-01-05 | 2015-05-06 | 英利集团有限公司 | Single-crystal furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: YANGGUANG GUIFENG ELECTRONICS TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: HEBEI YUJING ELECTRONIC TECHNOLOGY CO., LTD. Effective date: 20131030 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20131030 Address after: 065201 Hebei Province, Sanhe Yanjiao economic and Technological Development Zone Yingbin Road Jinglong Group Industrial Park Patentee after: YANGGUANG GUIFENG ELECTRONIC SCIENCE & TECHNOLOGY CO., LTD. Address before: 065201 Langfang city of Hebei province Sanhe Yanjiao economic and Technological Development Zone Yingbin Road Jinglong Group Industrial Park Patentee before: Hebei Yujing Electronic Technology Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120509 Termination date: 20150826 |
|
| EXPY | Termination of patent right or utility model |