CN202214445U - Multi-channel thermal field mechanism with uniform upward exhausting - Google Patents
Multi-channel thermal field mechanism with uniform upward exhausting Download PDFInfo
- Publication number
- CN202214445U CN202214445U CN2011203150464U CN201120315046U CN202214445U CN 202214445 U CN202214445 U CN 202214445U CN 2011203150464 U CN2011203150464 U CN 2011203150464U CN 201120315046 U CN201120315046 U CN 201120315046U CN 202214445 U CN202214445 U CN 202214445U
- Authority
- CN
- China
- Prior art keywords
- isolating cylinder
- cylinder
- exhaust
- thermal field
- isolated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The utility model discloses a multi-channel thermal field mechanism with uniform upward exhausting, which comprises an exhausting box and main exhaust pipes connected with the bottom end of the exhausting box, wherein, the exhausting box is enclosed by a ring-shaped upper cover, a ring-shaped lower cover, an internal isolated cylinder and an external isolated cylinder; a plurality of upper exhaust holes are formed on the cylinder wall of the internal isolated cylinder; a middle isolated cylinder is arranged between the internal isolated cylinder and the outer isolated cylinder; upper exhaust holes are also formed on the cylinder wall of the middle isolated cylinder in the position corresponding to those on the internal isolated cylinder wall; the two ends of each of the upper exhaust pipes are respectively sleeved in two corresponding upper exhaust holes; main exhaust holes are formed on the ring-shaped lower cover and on the bottom between the middle isolated barrel and the external isolated barrel; and the upper ends of the main exhaust pipes are sleeved in the main exhaust holes. The thermal field mechanism has unique uniform exhaust pipeline and flow control, allows the upward exhaust process to be stable, can effectively control the turbulent gas flow above the molten silicon liquid surface, and enables the whole withdrawing atmosphere to be smooth.
Description
Technical field
The utility model relates to a kind of hyperchannel and evenly goes up exhaust thermal field mechanism, is used for the evenly upward exhaust of czochralski silicon monocrystal process of growth.
Background technology
Vertical pulling method is to be the main method of monocrystalline silicon growing at present, and along with the thermal field Design and Development, present czochralski crystal growing furnace generally adopts air-releasing mechanism.This consumption that exhaust mode can effectively be saved important thermal field components such as graphite piece, especially well heater, the production cost of reduction silicon single-crystal gone up.
But; The known gas barrier of going up produces the gas sinuous flow easily owing to shortage is unreasonable to the uneven distribution and the free air delivery of the correct guidance, particularly upper air-vent of air-flow above fusion silicon liquid level; Thereby influence single crystal growing atmosphere, crystal growth is brought very big uncertainty.
The utility model content
The technical problem that the utility model will solve provides a kind of exhaust evenly, the hyperchannel of air-flow correct guidance evenly upward exhaust thermal field mechanism.
For solving the problems of the technologies described above, the technical scheme that the utility model is taked is: a kind of hyperchannel is evenly gone up exhaust thermal field mechanism, comprises gas outlet chamber and the main exhaust that is communicated with the bottom of gas outlet chamber; Its key is: said gas outlet chamber is surrounded by annular loam cake, annular lower cover, interior isolating cylinder and outer isolating cylinder; The barrel of isolating cylinder is provided with a plurality of upper air-vents in said.
As the further improvement of the utility model, be provided with middle isolating cylinder between said interior isolating cylinder and the outer isolating cylinder; Also be provided with upper air-vent on the barrel of middle isolating cylinder and with the corresponding position of upper air-vent on the barrel of interior isolating cylinder, the two ends of last vapor pipe are set in said two corresponding upper air-vents; Covering under the said annular and be provided with the main exhaust hole in middle the isolation on bucket and the outer bottom surface between isolating barrel, the upper end of said main exhaust is sleeved in the main exhaust hole.
On the bottom surface of above-mentioned annular loam cake with the end face of annular lower cover on respectively be provided with three respectively with the top and the bottom fixed locating slot of interior isolating cylinder, middle isolating cylinder and outer isolating cylinder.
The number of above-mentioned main exhaust is 12, and the number of upper air-vent is 12.
Adopt the beneficial effect that technique scheme produced to be: the whole exhaust line of the utility model is arranged on the thermal insulation layer outside; Gas gets into gas outlet chamber via equally distributed a plurality of upper air-vents on the gas outlet chamber inner side-wall; Equally distributed a plurality of main exhausts flow to the following gas exhaust duct of single crystal growing furnace from gas outlet chamber bottom again; The even exhaust line and the flow control of this uniqueness make exhaust process even, can improve the mode and the flow of gaseous emission; Thereby effectively suppress the gas sinuous flow that the fusion silicon liquid level top produces, make whole crystal pulling atmosphere steady.
Description of drawings
Fig. 1 is the structure sectional view of the utility model;
Fig. 2 is the structural representation of annular loam cake;
Fig. 3 is the structural representation of annular lower cover;
Fig. 4 is the structural representation of interior isolating cylinder;
Fig. 5 is the structural representation of middle isolating cylinder;
Fig. 6 is the structural representation of outer isolating cylinder;
Among the figure, 1, annular loam cake, 2, annular lower cover, 3, interior isolating cylinder, 4, middle isolating cylinder, 5, outer isolating cylinder, 6, go up vapor pipe, 7, main exhaust.
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is done further detailed explanation.
Shown in Fig. 1-6, the utility model comprises gas outlet chamber and the main exhaust that is communicated with the bottom of gas outlet chamber; Its key is: said gas outlet chamber is surrounded by annular loam cake, annular lower cover, interior isolating cylinder and outer isolating cylinder; The barrel of isolating cylinder is provided with a plurality of upper air-vents in said.Upper air-vent is main vent, links to each other with the upper end venting port of single crystal growing furnace.
Isolating cylinder 4 in being provided with between isolating cylinder 3 and the outer isolating cylinder 5 in said; Also be provided with upper air-vent on the barrel of middle isolating cylinder 4 and with the corresponding position of upper air-vent on interior isolating cylinder 3 barrels, the two ends of last vapor pipe 6 are set in said two corresponding upper air-vents; Isolating on the bottom surface between barrels 5 and be provided with the main exhaust hole on the said annular lower cover 2 and at the middle bucket 4 and outer of isolating, the upper end of said main exhaust 7 is sleeved in the main exhaust hole, and the lower end of main exhaust 7 links to each other with the following exhaust system that provides of whole body of heater.Middle isolating cylinder 4 is divided into two portions with the inner chamber of gas outlet chamber: be incubation cavity between interior isolating cylinder 3 and the middle isolating cylinder 4, middle isolating cylinder 4 is a discharge chamber with outer isolating cylinder 5.Last vapor pipe 6 is sleeved on the upper space of incubation cavity, is used for the gas that the upper end venting port of single crystal growing furnace is anti-and imports discharge chamber.A plurality of vapor pipes 6 of going up are on the same horizontal plane, and along the circumference uniform distribution, a plurality of main exhausts 7 evenly are arranged on the said bottom surface; Such setting makes exhaust process even, and airshed is suitable; Effectively suppress the gas sinuous flow that the fusion silicon liquid level top produces, make whole crystal pulling atmosphere steady.
Like Fig. 2, shown in 3, on the bottom surface of said annular loam cake 1 with the end face of annular lower cover 2 on respectively be provided with three respectively with said in the top and the bottom fixed locating slot of isolating cylinder 3, middle isolating cylinder 4 and outer isolating cylinder 5.Annular loam cake 1, annular lower cover 2, interior isolating cylinder 3, middle isolating cylinder 4 and outer isolating cylinder 5 are the high purity graphite material.Locating slot is circular, and its center of circle overlaps with the annulus center of circle of covers, and positioning function is not only arranged, and also can make the sealed state that is connected between above-mentioned each parts.
The number of said main exhaust 7 is 12, and the number of said upper air-vent is 12.
Claims (4)
1. a hyperchannel is evenly gone up exhaust thermal field mechanism, the main exhaust that comprises gas outlet chamber and be communicated with the bottom of gas outlet chamber (7); It is characterized in that: said gas outlet chamber is surrounded by annular loam cake (1), annular lower cover (2), interior isolating cylinder (3) and outer isolating cylinder (5); The barrel of isolating cylinder (3) is provided with a plurality of upper air-vents in said.
2. a kind of hyperchannel according to claim 1 is evenly gone up exhaust thermal field mechanism, it is characterized in that: be provided with middle isolating cylinder (4) between isolating cylinder (3) and the outer isolating cylinder (5) in said; Also be provided with upper air-vent on the barrel of middle isolating cylinder (4) and with the corresponding position of upper air-vent on interior isolating cylinder (3) barrel, the two ends of last vapor pipe (6) are set in said two corresponding upper air-vents; Said annular lower cover (2) go up and be arranged in isolate bucket (4) with outside be provided with the main exhaust hole on the bottom surface between the isolation barrel (5), the upper end of said main exhaust (7) is sleeved in the main exhaust hole.
3. a kind of hyperchannel according to claim 2 is evenly gone up exhaust thermal field mechanism, it is characterized in that: on the bottom surface of said annular loam cake (1) with the end face of annular lower cover (2) on respectively be provided with three respectively with said in the top and the bottom fixed locating slot of isolating cylinder (3), middle isolating cylinder (4) and outer isolating cylinder (5).
4. a kind of hyperchannel according to claim 1 and 2 is evenly gone up exhaust thermal field mechanism, it is characterized in that: the number of said main exhaust (7) is 12, and the number of said upper air-vent is 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203150464U CN202214445U (en) | 2011-08-26 | 2011-08-26 | Multi-channel thermal field mechanism with uniform upward exhausting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203150464U CN202214445U (en) | 2011-08-26 | 2011-08-26 | Multi-channel thermal field mechanism with uniform upward exhausting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202214445U true CN202214445U (en) | 2012-05-09 |
Family
ID=46013707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011203150464U Expired - Fee Related CN202214445U (en) | 2011-08-26 | 2011-08-26 | Multi-channel thermal field mechanism with uniform upward exhausting |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202214445U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106842832A (en) * | 2017-02-16 | 2017-06-13 | 深圳市华星光电技术有限公司 | Fumer and gold-tinted processing procedure developing apparatus for developing apparatus |
| CN109797426A (en) * | 2019-03-11 | 2019-05-24 | 上海新昇半导体科技有限公司 | A kind of crystal pulling apparatus |
| CN110760935A (en) * | 2019-11-29 | 2020-02-07 | 晶澳太阳能有限公司 | Single crystal furnace |
-
2011
- 2011-08-26 CN CN2011203150464U patent/CN202214445U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106842832A (en) * | 2017-02-16 | 2017-06-13 | 深圳市华星光电技术有限公司 | Fumer and gold-tinted processing procedure developing apparatus for developing apparatus |
| CN109797426A (en) * | 2019-03-11 | 2019-05-24 | 上海新昇半导体科技有限公司 | A kind of crystal pulling apparatus |
| CN110760935A (en) * | 2019-11-29 | 2020-02-07 | 晶澳太阳能有限公司 | Single crystal furnace |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102312285B (en) | External continuous feeding mechanism for monocrystal furnace | |
| CN202139324U (en) | Graphite thermal field system of upward-exhausting thermal field type czochralski silicon mono-crystal furnace | |
| CN202214445U (en) | Multi-channel thermal field mechanism with uniform upward exhausting | |
| CN102747418B (en) | A kind of high temperature big area Device for epitaxial growth of silicon carbide and treatment process | |
| WO2020118999A1 (en) | Quartz tube and device for crystal growth by vb/vgf method | |
| CN203007469U (en) | Thermal field device of czochralski crystal growing furnace | |
| CN103726103A (en) | Reaction chamber | |
| TWI615502B (en) | Bernoulli susceptor and epitaxial growth equipment | |
| CN104046959A (en) | Chemical vapor deposition device for epitaxial growth of silicon carbide | |
| CN101709506A (en) | Exhaust method and device of thermal field of single crystal furnace | |
| CN202786496U (en) | Composite heat shielding device applied to single crystal furnace | |
| CN102312284B (en) | Thermal field of straight pulling silicon single crystal furnace with a plurality of exhaust pipelines uniformly and downward distributed | |
| CN203657465U (en) | Energy-saving vacuum double-cavity maintaining furnace | |
| CN106894082B (en) | Monocrystalline silicon growing furnace | |
| CN202730297U (en) | Czochralski method single crystal furnace thermal field structure | |
| CN113652738B (en) | Crucible system for growing crystals by physical vapor transport method and use method thereof | |
| CN205662597U (en) | Metal organic chemistry vapour deposition equipment reaction cavity structures | |
| CN208008945U (en) | A kind of exhaust apparatus and single crystal growing furnace of semiconductor grade monocrystal stove | |
| CN202786503U (en) | Gas path distribution device of poly-crystal ingot furnace | |
| CN202202015U (en) | Thermal filed with multiple downward exhaust pipelines distributed uniformly for direct-pulling silicon single crystal furnace | |
| CN203923441U (en) | The single crystal growing furnace of built-in gas barrier | |
| CN101712189B (en) | Jacketed mold of driving belt, as well as vulcanizing tank and vulcanizing process matched with same | |
| CN201924100U (en) | Silicon single crystal growth furnace with gas cold trap | |
| CN113502531A (en) | Multi-partition-zone ingot casting monocrystalline silicon growth equipment and method with adjustable vertical temperature gradient | |
| CN106400102A (en) | Growth equipment and method thereof capable of achieving online annealing of single crystal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: YANGGUANG GUIFENG ELECTRONICS TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: HEBEI YUJING ELECTRONIC TECHNOLOGY CO., LTD. Effective date: 20131104 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20131104 Address after: 065201 Hebei Province, Sanhe Yanjiao economic and Technological Development Zone Yingbin Road Jinglong Group Industrial Park Patentee after: YANGGUANG GUIFENG ELECTRONIC SCIENCE & TECHNOLOGY CO., LTD. Address before: 065201 Langfang city of Hebei province Sanhe Yanjiao economic and Technological Development Zone Yingbin Road Jinglong Group Industrial Park Patentee before: Hebei Yujing Electronic Technology Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120509 Termination date: 20150826 |
|
| EXPY | Termination of patent right or utility model |