CN109797426A - A kind of crystal pulling apparatus - Google Patents
A kind of crystal pulling apparatus Download PDFInfo
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- CN109797426A CN109797426A CN201910181965.8A CN201910181965A CN109797426A CN 109797426 A CN109797426 A CN 109797426A CN 201910181965 A CN201910181965 A CN 201910181965A CN 109797426 A CN109797426 A CN 109797426A
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- argon gas
- output channel
- gas output
- crystal pulling
- pulling apparatus
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Abstract
The present invention provides a kind of crystal pulling apparatus, and described device includes: furnace body；Argon gas input channel at the top of the furnace body is set；The argon gas output channel of the bottom of furnace body is set；Wherein, the argon gas output channel inner wall is provided with high-temperature-resistant layer.Crystal pulling apparatus according to the present invention, by the way that high-temperature-resistant layer is arranged on the argon gas output channel for being connected to bottom of furnace body, it effectively prevents in argon gas discharge process, the oxide of silicon is directly contacted with argon gas output channel, reacting between the oxide of silicon and pipeline material is completely cut off, so as to avoid the oxidation of argon gas output channel and the deposition of byproduct of reaction, the service life of argon gas output channel is extended, production cost is reduced.
Description
Technical field
The present invention relates to field of semiconductor manufacture, in particular to a kind of crystal pulling apparatus.
Background technique
Vertical pulling method (Cz) is to prepare a kind of important method of semiconductor and silicon suitable for solar purposes monocrystalline, is made up of carbon materials
Thermal field to the high-purity silicon material for being put into crucible carry out heating be allowed to melt, later by will seed crystal immerse melt in and pass through one
Series (seeding, shouldering, isometrical, ending, cooling) technical process, finally obtains monocrystal rod.
Crucible as the main raw material(s) for preparing silicon single crystal is prepared by high-purity sio2 powder, is needed in long brilliant process
Bear 1500 degree or so of high temperature.And inner surface of crucible can be contacted with the silicon of molten condition, can be reacted SiO2+ in contact surface
Si→SiO.The oxide (SiO) of silicon is discharged from free surface after generating.Since long crystalline substance in the process can be constantly to furnace interior
It is passed through argon gas, while so that furnace pressure is maintained at setting value using vacuum pump.It is big that this mode causes crystal growing process to generate
The argon gas of amount mixed oxide is pumped from furnace interior.
Since stove interior temperature is high, so that argon gas is heated on 1000 degrees Celsius, high-temperature gas is by vacuum pumping
It is discharged again via exhaust pump after first passing through the argon gas output channel cooling that bottom of furnace body is set during walking.Output channel both ends
The temperature difference is big, and the oxide (SiO) of silicon is reacted with output channel, aoxidizes output channel constantly, while generating by-product.Argon gas
So that output channel durability is poor, by-product is easy to deposit in output channel bottom of the tube for the oxidation of output channel, after being used for multiple times,
It is unsmooth that the by-product of deposition often leads to the exhaust of argon gas output channel.The output of frequent progress argon gas is generally required in order to continue long crystalline substance
The replacement of pipeline increases long brilliant cost.
For this reason, it is necessary to a kind of new crystal pulling apparatus be proposed, to solve the problems of the prior art.
Summary of the invention
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.Summary of the invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection scope for attempting to determine technical solution claimed more.
The present invention provides a kind of crystal pulling apparatus, described device includes:
Furnace body；
Argon gas input channel at the top of the furnace body is set；
The argon gas output channel of the bottom of furnace body is set；Wherein, the argon gas output channel inner wall is provided with resistance to height
Warm layer.
Illustratively, the high-temperature-resistant layer includes silicon nitride layer.
Illustratively, the high-temperature-resistant layer is set as defeated using the argon gas is deposited on by the method for chemical vapor deposition
The film layer of inner wall of the pipe out.
Illustratively, the range of the thickness of the film layer is 5 μm of -1mm.
Illustratively, the high-temperature-resistant layer is set as the detachable lining structure being arranged in the argon gas output channel.
Illustratively, the material of the argon gas output channel includes graphite.
It illustratively, further include the cooling pipe being connected with the argon gas output channel, the argon gas output channel passes through
The cooling pipe is connected to exhaust pump.
Crystal pulling apparatus according to the present invention, by the way that high temperature resistant is arranged on the argon gas output channel for being connected to bottom of furnace body
Layer, effectively prevents in argon gas discharge process, and the oxide of silicon is contacted with the direct of argon gas output channel, has completely cut off the oxidation of silicon
Reacting between object and pipeline material extends so as to avoid the oxidation of argon gas output channel and the deposition of byproduct of reaction
The service life of argon gas output channel, reduces production cost.
Detailed description of the invention
Following drawings of the invention is incorporated herein as part of the present invention for the purpose of understanding the present invention.Shown in the drawings of this hair
Bright embodiment and its description, principle used to explain the present invention.
In attached drawing:
Fig. 1 is the structural schematic diagram according to a kind of crystal pulling apparatus of one embodiment of the present of invention；
Fig. 2 is the structural schematic diagram according to a kind of argon gas exhaust pipe of one embodiment of the present of invention；
Fig. 3 is the structural schematic diagram according to a kind of argon gas exhaust pipe of one embodiment of the present of invention.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid confusion with the present invention, for some technical characteristics well known in the art not into
Row description.
In order to thoroughly understand the present invention, detailed description will be proposed in following description, it is of the present invention to illustrate
Crystal pulling apparatus.Obviously, execution of the invention is not limited to the specific details that the technical staff of semiconductor field is familiar with.The present invention
Preferred embodiment be described in detail as follows, however in addition to these detailed description other than, the present invention can also have other embodiments.
It should give it is noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to exemplary embodiment of the present invention.As used herein, unless the context clearly indicates otherwise, otherwise singular
It is intended to include plural form.Additionally, it should be understood that when using term "comprising" and/or " comprising " in the present specification
When, indicate that there are the feature, entirety, step, operation, element and/or component, but do not preclude the presence or addition of one or more
Other a features, entirety, step, operation, element, component and/or their combination.
Now, an exemplary embodiment of the present invention is more fully described with reference to the accompanying drawings.However, these exemplary realities
Applying example can be implemented with many different forms, and should not be construed to be limited solely to the embodiments set forth herein.It should
These embodiments that are to provide understood are in order to enable disclosure of the invention is thoroughly and complete, and by these exemplary implementations
The design of example is fully conveyed to those of ordinary skill in the art.In the accompanying drawings, for the sake of clarity, the thickness of layer and region is exaggerated
Degree, and make that identical element is presented with like reference characters, thus description of them will be omitted.
The technical issues of in order to solve in the prior art, the present invention provides a kind of crystal pulling apparatus, described device includes:
Furnace body；
Argon gas input channel at the top of the furnace body is set；
The argon gas output channel of the bottom of furnace body is set；Wherein, the argon gas output channel inner wall is provided with resistance to height
Warm layer.
A kind of crystal pulling apparatus proposed by the invention is illustrated referring now to Fig. 1 and Fig. 2, according to Fig. 1
A kind of structural schematic diagram of the crystal pulling apparatus of one embodiment of the present of invention；Fig. 2 is according to the one of one embodiment of the present of invention
The structural schematic diagram of kind argon gas exhaust pipe；Fig. 3 is the knot according to a kind of argon gas exhaust pipe of one embodiment of the present of invention
Structure schematic diagram.
Vertical pulling method (Cz) is to prepare a kind of important method of semiconductor and silicon suitable for solar purposes monocrystalline, is made up of carbon materials
Thermal field to the high-purity silicon material for being put into crucible carry out heating be allowed to melt, later by will seed crystal immerse melt in and pass through one
Series (seeding, shouldering, isometrical, ending, cooling) technical process, finally obtains monocrystal rod.
Referring to Fig. 1, it illustrates crystal pulling apparatus according to an embodiment of the invention.Crystal pulling apparatus includes furnace body 1, furnace
It is provided with crucible 11 in body 1, the heater 12 heated to it is provided on the outside of crucible 11, accommodates silicon melt in crucible 11
13,11 bottom of crucible is provided with the driving device 15 that driving crucible 11 rotation and moved up and down.Crucible is kept during crystal pulling
Rotation is the asymmetry in order to reduce the heat of silicon melt, makes silicon crystal column isodiametric growth.The crystal pulling system also packet seed crystal, drawing
Line, bracing wire motor, argon gas flow backwards the configuration in the prior art such as plate and the insulation material layer being arranged on the outside of heater, not
It is all shown in Fig. 1, those skilled in the art, which can according to need, to be selected, and details are not described herein.
Referring to Fig. 1, during crystal pulling, crystal bar 14 is lifted up under the action of bracing wire, meanwhile, driving device 15 is driven
Dynamic crucible 11 is rotated and is moved up.Meanwhile the argon gas input channel 2 at the top of furnace body is set and is passed through argon gas into furnace body, make
Crystal pulling process carries out in an argon atmosphere, to avoid the oxidation of silicon melt.However, the material of crucible 11 often uses quartzy earthenware
Crucible needs to bear during crystal pulling 1500 DEG C or more of high temperature, tends to occur on the contact surface of crucible and silicon melt anti-
SiO2+Si → SiO is answered, and generates the oxide (SiO) of silicon.The oxide (SiO) of silicon is pulled away together with the discharge of argon gas.
It is discharged from the argon gas output channel 3 of 1 bottom of furnace body.Argon gas output channel 3 is connected by cooling pipe and exhaust pump (such as vacuum pump)
It connects.Since argon gas output channel one end connects furnace body, the other end connects cooling pipe, in argon gas discharge process, argon gas output
The pipe ends temperature difference is big, in the side close to furnace body, tends to occur anti-between the oxide (SiO) of silicon and argon gas output channel
It answers, high temperature corrosion is caused to argon gas output channel.
The material of an example according to the present invention, argon gas output channel uses graphite, the oxide of graphite material and silicon
(SiO) react SiO+2C → SiC+2CO, and as by-product deposition in pipeline, CO is discharged SiC therein as gas.
With the progress of crystal pulling, on the one hand the oxide (SiO) as the graphite of argon gas output channel material and silicon reacts and high
On the other hand temperature oxidation blocks argon gas output channel on the SiC deposition argon gas output channel of reaction generation, eventually leads to
Need replacing argon gas output channel.
For this purpose, in the present invention, high-temperature-resistant layer is arranged in argon gas output channel, to avoid in argon gas discharge process,
It is allowed to corrode there is a phenomenon where the oxide of silicon (SiO) carries out high-temperature oxydation to argon gas output channel.
Illustratively, the high-temperature-resistant layer includes silicon nitride layer.Silicon nitride is the chemical combination being made of element silicon and nitrogen
Object, silicon nitride is all a kind of higher with certain thermal conductivity, low thermal coefficient of expansion, elasticity modulus within the scope of very wide temperature
High-strength rigid ceramics.Different from general ceramics, its fracture toughness is high.These properties, which combine, makes it with outstanding
Thermal shock resistance can bear high structural loads at high temperature and have excellent abrasion resistance properties.It is usually used in needing high resistance to
With the purposes under property and hot environment.Meanwhile the oxide of silicon nitride and silicon does not react, and is arranged in argon gas output channel
Side can react to avoid between the oxide (SiO) and argon gas output channel of silicon, avoid the oxide (SiO) of silicon to argon gas
Output channel carries out high-temperature oxydation and makes the corrosion of argon gas output channel.
In one embodiment of the invention, the material using graphite as argon gas output channel avoids the oxide of silicon
(SiO) it reacts between graphite material, avoids the corrosion of argon gas output channel, also effectively prevent silicon carbide simultaneously
Deposition.The service life for extending argon gas output channel reduces crystal pulling cost.
Illustratively, the high-temperature-resistant layer is set as being deposited on first pipe using the method by chemical vapor deposition
The film layer of road inner wall.As shown in Fig. 2, the method by chemical vapor deposition deposits a tunic in the inner wall of argon gas output channel 3
Layer 31, the film layer 31 are silicon nitride layer.Make film layer 31 and argon gas defeated by the method depositional coating 31 of chemical vapor deposition
The excellent bonding performance of pipeline 3 out further improves the high temperature resistance of argon gas output channel.Illustratively, the film layer 31
Thickness range be 5 μm of -1mm.
Illustratively, the high-temperature-resistant layer is set as the detachable lining structure being arranged in the argon gas output channel.
As shown in figure 3, being provided with detachable lining structure 32 in argon gas output channel 3；High-temperature-resistant layer is set as exporting in argon gas
The lining structure 32 being arranged in pipeline 3, avoids the contact between argon gas output channel 3 and the oxide (SiO) of silicon, avoids argon gas
The high temperature corrosion of output channel 3.At the same time it can also according to the service condition of lining structure 32 and argon gas output channel 3, to the two
It is replaced, to be further reduced the frequency of part replacement, the service life of elongate member reduces production cost.According to this hair
In bright one embodiment, argon gas output channel is made of graphite material, and lining structure uses silicon nitride ceramics lining, thus
Reduce the high temperature corrosion of argon gas output channel, and avoids deposition of the silicon carbide in argon gas output channel.
In conclusion crystal pulling apparatus according to the present invention, by being set on the argon gas output channel for being connected to bottom of furnace body
High-temperature-resistant layer is set, is effectively prevented in argon gas discharge process, the oxide of silicon is contacted with the direct of argon gas output channel, is completely cut off
Reacting between the oxide of silicon and pipeline material, so as to avoid the oxidation of argon gas output channel and sinking for byproduct of reaction
Product, extends the service life of argon gas output channel, reduces production cost.
The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, is not intended to limit the invention to the scope of the described embodiments.Furthermore those skilled in the art
It is understood that the present invention is not limited to the above embodiments, introduction according to the present invention can also be made more kinds of member
Variants and modifications, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (7)
1. a kind of crystal pulling apparatus characterized by comprising
Furnace body；
Argon gas input channel at the top of the furnace body is set；
The argon gas output channel of the bottom of furnace body is set；Wherein, the argon gas output channel inner wall is provided with high-temperature-resistant layer.
2. crystal pulling apparatus according to claim 1, which is characterized in that the high-temperature-resistant layer includes silicon nitride layer.
3. crystal pulling apparatus according to claim 2, which is characterized in that the high-temperature-resistant layer is to use to pass through chemical vapor deposition
Long-pending method is deposited on the film layer of the argon gas output channel inner wall.
4. crystal pulling apparatus according to claim 3, which is characterized in that the range of the thickness of the film layer is 5 μm of -1mm.
5. crystal pulling apparatus according to claim 1, which is characterized in that the high-temperature-resistant layer is in the argon gas output channel
The detachable lining structure of interior setting.
6. crystal pulling apparatus according to claim 1, which is characterized in that the material of the argon gas output channel includes graphite.
7. crystal pulling apparatus according to claim 1, which is characterized in that further include be connected with the argon gas output channel it is cold
But pipeline, the argon gas output channel are connected to exhaust pump by the cooling pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910181965.8A CN109797426A (en) | 2019-03-11 | 2019-03-11 | A kind of crystal pulling apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910181965.8A CN109797426A (en) | 2019-03-11 | 2019-03-11 | A kind of crystal pulling apparatus |
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| Publication Number | Publication Date |
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| CN109797426A true CN109797426A (en) | 2019-05-24 |
Family
ID=66562798
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910181965.8A Pending CN109797426A (en) | 2019-03-11 | 2019-03-11 | A kind of crystal pulling apparatus |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002316896A (en) * | 2001-04-13 | 2002-10-31 | Shin Etsu Handotai Co Ltd | Manufacturing apparatus and manufacturing method for silicon single crystal |
| WO2009031408A1 (en) * | 2007-09-03 | 2009-03-12 | Sumco Techxiv Corporation | Exhaust member for semiconductor single crystal production |
| CN202214445U (en) * | 2011-08-26 | 2012-05-09 | 河北宇晶电子科技有限公司 | Multi-channel thermal field mechanism with uniform upward exhausting |
| CN102719806A (en) * | 2012-06-26 | 2012-10-10 | 上海宏力半导体制造有限公司 | Deposition device |
| CN204752905U (en) * | 2015-06-04 | 2015-11-11 | 天津市环欧半导体材料技术有限公司 | A exhaust duct for vertical pulling silicon single crystal stove exhaust system |
| CN205711048U (en) * | 2016-05-20 | 2016-11-23 | 邢台晶龙电子材料有限公司 | A kind of single crystal growing furnace exhaustor |
| CN205934123U (en) * | 2016-08-03 | 2017-02-08 | 成都新源汇博光电科技有限公司 | YAG crystal growth stove is with exhaust connection structure |
-
2019
- 2019-03-11 CN CN201910181965.8A patent/CN109797426A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002316896A (en) * | 2001-04-13 | 2002-10-31 | Shin Etsu Handotai Co Ltd | Manufacturing apparatus and manufacturing method for silicon single crystal |
| WO2009031408A1 (en) * | 2007-09-03 | 2009-03-12 | Sumco Techxiv Corporation | Exhaust member for semiconductor single crystal production |
| CN202214445U (en) * | 2011-08-26 | 2012-05-09 | 河北宇晶电子科技有限公司 | Multi-channel thermal field mechanism with uniform upward exhausting |
| CN102719806A (en) * | 2012-06-26 | 2012-10-10 | 上海宏力半导体制造有限公司 | Deposition device |
| CN204752905U (en) * | 2015-06-04 | 2015-11-11 | 天津市环欧半导体材料技术有限公司 | A exhaust duct for vertical pulling silicon single crystal stove exhaust system |
| CN205711048U (en) * | 2016-05-20 | 2016-11-23 | 邢台晶龙电子材料有限公司 | A kind of single crystal growing furnace exhaustor |
| CN205934123U (en) * | 2016-08-03 | 2017-02-08 | 成都新源汇博光电科技有限公司 | YAG crystal growth stove is with exhaust connection structure |
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Application publication date: 20190524 |
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