CN202206355U - Switch circuit and switch testing system using same - Google Patents
Switch circuit and switch testing system using same Download PDFInfo
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- CN202206355U CN202206355U CN2011202782522U CN201120278252U CN202206355U CN 202206355 U CN202206355 U CN 202206355U CN 2011202782522 U CN2011202782522 U CN 2011202782522U CN 201120278252 U CN201120278252 U CN 201120278252U CN 202206355 U CN202206355 U CN 202206355U
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Abstract
The utility model discloses a switch circuit and a switch testing system using the same, wherein the switch circuit comprises a first switch, a second switch and a third switch; the first switch and the second switch are connected in series between a test voltage source and a test point; the control ends of the first switch and the second switch are respectively connected with a first control signal; the third switch is connected between the common end of the first switch and the second switch in series, and the control end of the third switch is connected with a second control signal; the first switch/the second switch and the third switch are operated reversely by the first control signal and the second control signal; and when the first switch and the second switch are respectively switched off, the third switch is conducted and grounded. In the switch circuit, a grounding structure is introduced, so that the ratio of the insulating resistance and the conducting resistance of the switch circuit in a switched-off state becomes very large, and further the current leakage is reduced when the switch circuit is switched off. In the utility model, the implementation is reliable, the parallel connection of switch circuits with more levels can be implemented, and the 100Momega insulating target measurement can be achieved.
Description
Technical field
The utility model relates to a kind of switching circuit, especially relates to a kind of introduction ground structure, by the time have high impedance and make the less switching circuit of leakage current, and the switch testing system that uses switching circuit to realize.
Background technology
Switching circuit is widely used as among the various testing tools of circuit board manufacturing.Because of the open circuit leakage current of switch module, the performance of its test high resistant (insulation impedance) is subject to number of test points.In existing design, use mechanical contacts relay (Relay) or solid-state module as switching circuit.Relay with the inert gas of general atmosphere, filling or vacuum as the electric medium that opens circuit.Solid-state circuit then with semi-conductive face or the passage of connecing as the electric medium that opens circuit.
Though relay has good release property, by general use on the switching system of electronic measuring instrument.Simultaneously, because commercial Application requires more and more faster speed, increasingly high subordinate's density, and also shorten the time lifetime of mechanical contacts at a high speed; Relay is also more and more difficult to import in the design of switching system, rise and generation be the solid-state switch assembly.
Switch testing system as shown in Figure 1, several switching circuits are connected in parallel, and each switching circuit comprises high-side switch SW
XHWith low side switch SW
XL, and high-side switch SW
XHWith low side switch SW
XLBe test point P
XWherein, 1≤X≤n, and X is an integer.Therefore, actual current sensor is by target current to be measured and leakage current I
LeakSummation, i.e. Is=I
1+ I
2+ I
3+ I
4+ ..+I
n
In conjunction with shown in Figure 2, master switch n=4002 of counting, testing resistance R
TBe connected to test point P
3With test point P
4Between, SW
3HAnd SW
4HConducting; The leakage current I that lets the switch circuit end
LeakHave only ten thousand of target high resistant electric current to be measured/, i.e. I
4=10000 * I
Leak, be convenience of calculation, can ignore I
3, that is: Is ≈ I
4+ (n – 2) * I
Leak≈ I
4+ 0.4 I
4=1.4 I
4
Following formula could see that the measurement result of high resistant will have 40% error! Add tester configuration and other loops, error will be bigger.Because the test combination of determinand and condition are unfixing, do not allow the software compensation that is easy to do.Because the interference of leakage current has caused the clear capacity loss of instrument solution for the current, promptly using software compensation also is the declaration of surperficial specification, and the ability of reality is not had help.
Summary of the invention
The switch testing system that the utility model proposes a kind of switching circuit and uses switching circuit to constitute; Through introducing ground structure; By the time have high impedance and make leakage current less, solved current switch circuit exist by the time leakage current big and inaccurate technical problem of testing impedance.
The utility model adopts following technical scheme to realize: a kind of switching circuit comprises: be serially connected in first switch and second switch between test voltage source and the test point, the control end of first switch and second switch is connected first control signal respectively; Be serially connected in the common port of first switch and second switch and the 3rd switch between the ground, the control end of the 3rd switch connects second control signal; Through control first control signal, second control signal makes first switch/second switch and the 3rd switch inverse operation, and when first switch and second switch all by the time, the 3rd switch conduction ground connection.
Preferably, first switch, second switch and the 3rd switch are optocoupler; The input that the control end of first switch links to each other with the control end of second switch, input is connected the test voltage source, output connects second switch, and the output of second switch connects test point; Be connected with the output of first switch after the output head grounding of the 3rd switch, current-limiting resistance of input serial connection.
Preferably, first switch, second switch and the 3rd switch are MOS transistor; The grid that the source electrode of first switch connects source electrode that test voltage source, drain electrode connect second switch, grid is connected with the grid of second switch and is connected in series bias control circuit and connects first control signal afterwards, and the drain electrode of second switch connection test point; The grid of the 3rd switch is connected with the drain electrode of first switch after connecting second control signal, source ground, current-limiting resistance of drain electrode serial connection.
The utility model also proposes following technical scheme: a kind of switching circuit comprises: be serially connected in the high-side switch circuit between high side test voltage source and the test point; Be serially connected in the low side switch circuit between downside test voltage source and the test point; Be respectively applied for the high side control signal and the downside control signal of control high-side switch circuit, low side switch circuit; Wherein, the high-side switch circuit comprises: be serially connected in first high-side switch and second high-side switch between high side test voltage source and the test point, the control end of first high-side switch and second high-side switch is connected high side control signal respectively; Be serially connected in the common port of first high-side switch and second high-side switch and the 3rd high-side switch between the ground, high side inverter of control end serial connection of the 3rd high-side switch connects high side test voltage source; When first high-side switch and second high-side switch all by the time, the 3rd high-side switch conducting ground connection; Wherein, the low side switch circuit comprises: be serially connected in first low side switch and second low side switch between downside test voltage source and the test point, the control end of first low side switch and second low side switch is connected the downside control signal respectively; Be serially connected in the common port of first low side switch and second low side switch and the 3rd high-side switch between the ground, downside inverter of control end serial connection of the 3rd high-side switch connects downside test voltage source; When first low side switch and second low side switch all by the time, the 3rd low side switch conducting ground connection.
Preferably; First high-side switch, second high-side switch and the 3rd high-side switch are optocoupler; The input that the control end of the control end of first high-side switch and second high-side switch links to each other, input is connected high side test voltage source, output connects second high-side switch; And the output of second high-side switch connects test point, is connected with the output of first high-side switch after the output head grounding of the 3rd high-side switch, current-limiting resistance of input serial connection.
Preferably; First low side switch, second low side switch and the 3rd low side switch are optocoupler; The input that the control end of the control end of first low side switch and second low side switch links to each other, input is connected test point, output connects second low side switch; And the output of second low side switch connects downside test voltage source, is connected with the output of first low side switch after the output head grounding of the 3rd low side switch, current-limiting resistance of input serial connection.
Preferably, first high-side switch, second high-side switch and the 3rd high-side switch are MOS transistor; The grid that the source electrode of first high-side switch connects source electrode that high side test voltage source, drain electrode connect second high-side switch, grid is connected with the grid of second high-side switch and is connected in series high lateral deviation pressure-controlled circuit and connects high side control signal afterwards, and the drain electrode of second high-side switch connection test point; Output, source ground, current-limiting resistance of drain electrode serial connection that the grid of the 3rd high-side switch connects high side inverter are connected with the drain electrode of first high-side switch afterwards.
Preferably, first low side switch, second low side switch and the 3rd low side switch are MOS transistor; The source electrode of first low side switch and the drain electrode of second low side switch be connected, drain connect test point, grid is connected with the grid of second low side switch, and the source electrode of second low side switch connection downside test voltage source; The grid of first low side switch all is connected in series the downside bias control circuit with the grid of second low side switch and is connected the downside control signal afterwards, and the drain electrode of second low side switch connects test point; Output, source ground, current-limiting resistance of drain electrode serial connection that the grid of the 3rd low side switch connects the downside inverter are connected with the source electrode of first low side switch afterwards.
Preferably; The downside bias control circuit comprises: emitter connects the first downside control switch of high side test voltage source; The grid, the base stage that connect first low side switch after its collector series connection the one RC oscillating circuit are connected in series the drain electrode that the 2nd RC oscillating circuit connects the second downside control switch afterwards, and the source ground of the second downside control switch, grid connect the downside control signal.
The utility model also proposes following technical scheme: a kind of switch testing system, and said switch testing system comprises: several described switching circuits, and each switching circuit is connected in parallel.
Compared with prior art, the utlity model has following beneficial effect:
The switching circuit of the utility model is introduced ground structure, makes the insulation resistance R of switch module when ending in the switching circuit
OffResistance R during with conducting (ON)
On(that is: R
Off/ R
On) ratio become very big, with this reduce switch module by the time leakage current.Therefore; The utility model control logic and cost also compare higher; But the realization of switching circuit is more reliable, and can realize more multi-level switching circuit parallel connection (test point of greater number promptly can be set in a switching circuit), reaches the insulation target measurement of 100M Ω.
Description of drawings
Fig. 1 is the electrical block diagram of existing switch testing system;
Fig. 2 is existing testing resistance R of switch testing system testing
TThe connection sketch map;
Fig. 3 A and Fig. 3 B are respectively the basic circuit of switching circuit and the sketch map of equivalent electric circuit;
Fig. 4 A and Fig. 4 B are respectively the basic circuit of improved switching circuit and the sketch map of equivalent electric circuit;
Fig. 5 is the electrical block diagram of the utility model switching circuit first embodiment;
Fig. 6 is the electrical block diagram of the utility model switching circuit second embodiment.
Embodiment
In the switching system with a plurality of paralleling switch assemblies, solid-state switch determines the high resistance measurement ability of whole switching circuit at insulation resistance or leakage current when (OFF) in each switch module.
Be the basic circuit sketch map of switch shown in Fig. 3 A, voltage is power supply and solid-state switch SW and the resistance R of V
LForm the loop.Shown in Fig. 3 B the equivalent electric circuit of switch open circuit insulation resistance, wherein, the leakage current I of solid-state switch SW
Leak_A =V/(R
Off+ R
L), R
OffBe solid-state switch SW by the time insulation resistance.
Wherein, R
L=0 o'clock leakage current is maximum, for:
I
leak_A ?=?=?V?/?R
off （1）
Further, shown in Fig. 4 A the basic circuit sketch map of improvement switch, solid-state switch SW among Fig. 3 A is developed into 3 structures solid-state switch SW all identical with impedance operator
A, SW
BAnd SW
C, solid-state switch SW
AWith solid-state switch SW
BSeries connection, and solid-state switch SW
AWith solid-state switch SW
BCommon port connect and resistance R
LThe solid-state switch SW that parallel connection is provided with
C
Fig. 4 B is the equivalent electric circuit of solid-state switch shown in Fig. 3 A when open circuit.Each solid-state switch SW
A, SW
BAnd SW
CIdentical impedance operator is all arranged, the insulation resistance R when ending
Off, the resistance R during conducting (ON)
On, then flow through solid-state switch SW
AElectric current I a=V/(R
Off+ R
On// (R
Off+ R
L)), and leakage current (flows through resistance R
LElectric current) I
Leak_B=Ia * R
On/ (R
On+ R
Off+ R
L).
Let RL=0 o'clock, Ia=V/(R
Off+ R
On// R
Off), the leakage current of this moment is maximum, for:
I
leak_B?=?Ia?×R
on?/?(R
on?+?R
off?) （2）
Because R
Off>>R
On, (R
Off+ R
On// R
Off) ≈ R
OffSo,, can draw in conjunction with following formula (1) and (2):
Ia?≈?V?/?R
off?≈I
leak_A （3）
I
leak_B?≈I
leak_A×R
on?/?(R
on?+?R
off?) （4）
Because the R of solid-state switch
OnMuch smaller than R
Off, suppose: R
Off/ R
On=10
8, then:
I
leak_B?≈I
leak_A?/?10
8 （5）
Can find out from formula (4), utilize the insulation resistance R of floatless switch when ending
OffResistance R during with conducting (ON)
On(that is: R
Off/ R
On) ratio, the leakage current that switching circuit ends will reduce greatly, thus the switching circuit cutoff performance greatly promotes.
Therefore, the utility model is to provide the switching circuit of an improvement, the switching circuit of script suspension joint (middle introducing ground connection configuration, make switch module in the switching circuit by the time insulation resistance R
OffResistance R during with conducting (ON)
On(that is: R
Off/ R
On) ratio become very big, with this reduce switch module by the time leakage current.
What need particularly point out is that the utility model indication switch module can be preferably solid-state switch for solid-state switch or other switches.
The switching circuit that the utility model proposes is mainly used in the automated test device that is electrically connected characteristic (ATE) with larger amt test point, for example is used to test the test machine that PCB, FPC open short circuit, silver-colored slurry, carbon film, touch screen ITO circuitous resistance.
As shown in Figure 5, the circuit diagram of first embodiment of the switching circuit that proposes for the utility model.Some grades switching circuit is connected in parallel, and constitutes similar switching system shown in Figure 1.Wherein, and switch module employing optocoupler (Optical Couple, OC).
The switching circuit of each grade has identical structure, comprising: by the high-side switch circuit of high side control signal CnP control; Low side switch circuit by downside control signal CnN control; And the common port of high-side switch circuit and low side switch circuit is test point Tn.Some grades switching circuit is connected in parallel through high side control signal CnP, downside control signal CnN respectively.
Wherein, the high-side switch circuit comprises: the first high-side switch PAn that is connected in series, the second high-side switch PBn; Input is connected the high side inverter UnP of the high side MOS control end of the high side control signal CnP of input; The 3rd high-side switch PCn that is connected with the output of high side inverter UnP with control end; The common port (that is: be connected simultaneously the output of the first high-side switch PAn and the input of the second high-side switch PBn) that connects the first high-side switch PAn and the second high-side switch PBn behind the input of the 3rd high-side switch PCn serial connection current-limiting resistance Rp, the output head grounding of the 3rd high-side switch PCn.
When the high side control signal CnP of input is useful signal; The first high-side switch PAn and the equal conducting of the second high-side switch PBn; Owing to high side inverter UnP is that invalid signals ends the 3rd high-side switch PCn with high side control signal CnP anti-phase, the high-side switch circuit is equivalent to conducting state.When the high side control signal CnP of input is invalid signals; The first high-side switch PAn and the second high-side switch PBn all end; The 3rd high-side switch PCn conducting ground connection; The high-side switch circuit is equivalent to cut-off state, because the 3rd high-side switch PCn conducting ground connection makes that the insulation resistance of high-side switch circuit when cut-off state is big especially; Thereby the leakage current that the first high-side switch Pan is produced is minimum, reaches the leakage current that stops the first high-side switch PAn and passes through the purpose that the second high-side switch PBn gets into test point Tn.
The low side switch circuit comprises: the first low side switch NAn that is connected in series, the second low side switch NBn; Input is connected the downside inverter UnN of the downside MOS control end of input downside control signal CnN; The 3rd low side switch NCn that is connected with the output of downside inverter UnN with control end; The common port (that is: be connected simultaneously the output of the first low side switch NaN and the input of the second low side switch NBn) that connects the first low side switch NAn and the second low side switch NBn behind the input of the 3rd low side switch NCn serial connection current-limiting resistance Rp, the output head grounding of the 3rd low side switch NCn.
The operation principle of low side switch circuit and high-side switch circuit are similar, through providing high side control signal CnP synchronously and downside control signal CnN is useful signal or is invalid signals, promptly can realize stoping leakage current to get into test point Tn.
In addition, the common port of high-side switch circuit and low side switch circuit is the output of the second high-side switch PBn and the input of the first low side switch NaN.
The input of the second high-side switch PBn connects high side test voltage source V P, and the output of the second low side switch NBn connects downside test voltage source VN, and high side test voltage source V P, downside test voltage source VN are according to the adjustable variation of test control program.
The first high-side switch PAn, the second high-side switch PBn, the 3rd high-side switch PCn, the first low side switch NAn, the second low side switch NBn and the 3rd low side switch NCn are structure, optocoupler that model is identical with impedance operator.The advantage of optocoupler is a processing ease, and the logic and the high-tension load applications of especially isolating low pressure are very convenient; Shortcoming is that reaction speed is slower than monomer assembly.
As shown in Figure 6, the circuit diagram of second embodiment of the switching circuit that proposes for the utility model.Some grades switching circuit is connected in parallel, and constitutes similar switch testing system shown in Figure 1.Wherein, switch module adopts transistor.
Specifically, similar with Fig. 5, comprise high-side switch circuit and low side switch circuit at the switching circuit of n level.Wherein, The high-side switch circuit comprises: source electrode connects the first high-side switch QnPA of high side test voltage source V P; The drain electrode of the first high-side switch QnPA connects the source electrode of the second high-side switch QnPB; The drain electrode of the second high-side switch QnPB is test point Tn, and the grid of the grid of the first high-side switch QnPA and second high-side switch QnPB parallel connection and be connected with the high side control signal CnP of input through a high lateral deviation pressure-controlled circuit; Be connected in the grid of the first high-side switch QnPA and first Zener diode (Zener Diode) DPn and the first resistance R Pn of high side MOS control end VGSP in parallel; And high side control signal CnP connects the 3rd high-side switch QnPC through high side inverter UnP, connects the drain electrode of the first high-side switch QnPA after the source ground of the 3rd high-side switch QnPC, current-limiting resistance Rp of drain electrode serial connection.
The first high-side switch QnPA, the second high-side switch QnPB are the PMOS transistor, and the 3rd high-side switch QnPC is a nmos pass transistor.
Wherein, High lateral deviation pressure-controlled circuit comprises: the high side control switch QnP1 that connects high side control signal CnP; This high side control switch QnP1 is NMOS, and its grid connects high side control signal CnP, source ground, grid that is connected the first high-side switch QnPA by the resistance RC oscillating circuit that parallel connection constitutes with electric capacity of drain electrode serial connection.
The low side switch circuit comprises: the first low side switch QnNA and the second low side switch QnNB of grid parallel connection; The drain electrode that the drain electrode connection test point Tn of the first low side switch QnNA, source electrode connect the second low side switch QnNB, and the source electrode of the second low side switch QnNB connects downside test voltage source VN; Downside bias control circuit of grid serial connection of the grid of the first low side switch QnNA and the second low side switch QnNB is connected with the downside control signal CnN of input; Be connected in the grid of the first low side switch QnNA and second Zener diode (Zener Diode) DNn and the second resistance R Nn of downside MOS control end VGSN in parallel; And downside control signal CnN connects the 3rd low side switch QnNC through downside inverter UnN, connects the source electrode of the first low side switch QnNA after the source ground of the 3rd low side switch QnNC, current-limiting resistance Rp of drain electrode serial connection.
The first low side switch QnNA, the second low side switch QnNB and the 3rd low side switch QnNC are nmos pass transistor.
Wherein, The downside bias control circuit comprises: emitter connects the first downside control switch QnN1 of high side test voltage source V P; It is positive-negative-positive bipolar junction transistor (Bipolar Junction Transistor; BJT); One of the collector series connection of the first downside control switch QnN1 is connected the first low side switch QnNA by the resistance RC oscillating circuit that parallel connection constitutes with electric capacity one of grid, base stage serial connection is connected the drain electrode of the second downside control switch QnN2 by resistance the 2nd RC oscillating circuit that parallel connection constitutes with electric capacity, and the second downside control switch QnN2 is NMOS, and its source ground, grid connect downside control signal CnN.
The first Zener diode PNn, the second Zener diode DNn be used for guaranteeing respectively the grid of grid and the second low side switch QnNB of grid, the first low side switch QnNA of grid and the second high-side switch QnPB of the first high-side switch QnPA all obtains specified bias voltage can conducting.
In addition, high side MOS control end VGSP and downside MOS control end VGSN can be connected to high side test voltage source V P and downside test voltage source VN respectively, also can be designed to independent bias circuit and drive effect to reach better MOSFET.
Similar with Fig. 6; The first high-side switch QnPA/second high-side switch QnPB and the 3rd high-side switch QnPC do opposite conducting and end action, and the first low side switch QnNA/, second low side switch QnNB and the 3rd low side switch QnNC do opposite conducting and end action.
The first high-side switch QnPA/second high-side switch QnPB all ends; The 3rd high-side switch QnPC conducting ground connection; The high-side switch circuit is equivalent to cut-off state, because the 3rd high-side switch PCn conducting ground connection makes that the insulation resistance of high-side switch circuit when cut-off state is big especially; Thereby the leakage current that the first high-side switch Pan is produced is minimum, reaches the leakage current that stops the first high-side switch PAn and passes through the purpose that the second high-side switch PBn gets into test point Tn.Same; The first low side switch QnNA/, the second low side switch QnNB all ends, the 3rd low side switch QnNC conducting ground connection, and the low side switch circuit is equivalent to cut-off state; Because the 3rd low side switch QnNC conducting ground connection; Make that the insulation resistance of low side switch circuit when cut-off state is big especially, thereby make the leakage current of first high-side switch QnPA/generation minimum, reach the leakage current that stops the first high-side switch PAn and pass through the purpose that the second high-side switch PBn gets into test point Tn.
The utility model is compared with existing switching circuit illustrated in figures 1 and 2; Though existing switching circuit has circuit structure and the simple intuition of control logic, maintenance easily, advantage that cost is relatively low, switching circuit is difficult to surmount reliably the insulation target upper limit of 20M Ω when having the huge test point of quantity and be applied to test macro.And the switching circuit of the utility model is introduced ground structure; Control logic and cost also compare higher; But the realization of switching circuit is more reliable, and can realize that more multi-level switching circuit parallel connection (test point of greater number promptly can be set in a switching circuit) reaches the insulation target measurement of 100M Ω.
The above is merely the preferred embodiment of the utility model; Not in order to restriction the utility model; Any modification of being done within all spirit and principles at the utility model, be equal to replacement and improvement etc., all should be included within the protection range of the utility model.
Claims (10)
1. a switching circuit is characterized in that, comprising:
Be serially connected in first switch and second switch between test voltage source and the test point, the control end of first switch and second switch is connected first control signal respectively;
Be serially connected in the common port of first switch and second switch and the 3rd switch between the ground, the control end of the 3rd switch connects second control signal;
Through control first control signal, second control signal makes first switch/second switch and the 3rd switch inverse operation, and when first switch and second switch all by the time, the 3rd switch conduction ground connection.
2. according to the said switching circuit of claim 1, it is characterized in that first switch, second switch and the 3rd switch are optocoupler;
The input that the control end of first switch links to each other with the control end of second switch, input is connected the test voltage source, output connects second switch, and the output of second switch connects test point;
Be connected with the output of first switch after the output head grounding of the 3rd switch, current-limiting resistance of input serial connection.
3. according to the said switching circuit of claim 1, it is characterized in that first switch, second switch and the 3rd switch are MOS transistor;
The grid that the source electrode of first switch connects source electrode that test voltage source, drain electrode connect second switch, grid is connected with the grid of second switch and is connected in series bias control circuit and connects first control signal afterwards, and the drain electrode of second switch connection test point;
The grid of the 3rd switch is connected with the drain electrode of first switch after connecting second control signal, source ground, current-limiting resistance of drain electrode serial connection.
4. a switching circuit is characterized in that, comprising:
Be serially connected in the high-side switch circuit between high side test voltage source and the test point;
Be serially connected in the low side switch circuit between downside test voltage source and the test point;
Be respectively applied for the high side control signal and the downside control signal of control high-side switch circuit, low side switch circuit;
Wherein, the high-side switch circuit comprises: be serially connected in first high-side switch and second high-side switch between high side test voltage source and the test point, the control end of first high-side switch and second high-side switch is connected high side control signal respectively; Be serially connected in the common port of first high-side switch and second high-side switch and the 3rd high-side switch between the ground, high side inverter of control end serial connection of the 3rd high-side switch connects high side test voltage source; When first high-side switch and second high-side switch all by the time, the 3rd high-side switch conducting ground connection;
Wherein, the low side switch circuit comprises: be serially connected in first low side switch and second low side switch between downside test voltage source and the test point, the control end of first low side switch and second low side switch is connected the downside control signal respectively; Be serially connected in the common port of first low side switch and second low side switch and the 3rd high-side switch between the ground, downside inverter of control end serial connection of the 3rd high-side switch connects downside test voltage source; When first low side switch and second low side switch all by the time, the 3rd low side switch conducting ground connection.
5. according to the said switching circuit of claim 4; It is characterized in that; First high-side switch, second high-side switch and the 3rd high-side switch are optocoupler; The input that the control end of the control end of first high-side switch and second high-side switch links to each other, input is connected high side test voltage source, output connects second high-side switch; And the output of second high-side switch connects test point, is connected with the output of first high-side switch after the output head grounding of the 3rd high-side switch, current-limiting resistance of input serial connection.
6. according to the said switching circuit of claim 4; It is characterized in that; First low side switch, second low side switch and the 3rd low side switch are optocoupler; The input that the control end of the control end of first low side switch and second low side switch links to each other, input is connected test point, output connects second low side switch; And the output of second low side switch connects downside test voltage source, is connected with the output of first low side switch after the output head grounding of the 3rd low side switch, current-limiting resistance of input serial connection.
7. according to the said switching circuit of claim 4, it is characterized in that first high-side switch, second high-side switch and the 3rd high-side switch are MOS transistor;
The grid that the source electrode of first high-side switch connects source electrode that high side test voltage source, drain electrode connect second high-side switch, grid is connected with the grid of second high-side switch and is connected in series high lateral deviation pressure-controlled circuit and connects high side control signal afterwards, and the drain electrode of second high-side switch connection test point;
Output, source ground, current-limiting resistance of drain electrode serial connection that the grid of the 3rd high-side switch connects high side inverter are connected with the drain electrode of first high-side switch afterwards.
8. according to the said switching circuit of claim 4, it is characterized in that first low side switch, second low side switch and the 3rd low side switch are MOS transistor;
The source electrode of first low side switch and the drain electrode of second low side switch be connected, drain connect test point, grid is connected with the grid of second low side switch, and the source electrode of second low side switch connection downside test voltage source;
The grid of first low side switch all is connected in series the downside bias control circuit with the grid of second low side switch and is connected the downside control signal afterwards, and the drain electrode of second low side switch connects test point;
Output, source ground, current-limiting resistance of drain electrode serial connection that the grid of the 3rd low side switch connects the downside inverter are connected with the source electrode of first low side switch afterwards.
9. said according to Claim 8 switching circuit is characterized in that the downside bias control circuit comprises:
Emitter connects the first downside control switch of high side test voltage source; The grid, the base stage that connect first low side switch after its collector series connection the one RC oscillating circuit are connected in series the drain electrode that the 2nd RC oscillating circuit connects the second downside control switch afterwards, and the source ground of the second downside control switch, grid connect the downside control signal.
10. a switch testing system is characterized in that, said switch testing system comprises: several are like any one described switching circuit among the claim 4-9, and each switching circuit is connected in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202782522U CN202206355U (en) | 2011-08-02 | 2011-08-02 | Switch circuit and switch testing system using same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202782522U CN202206355U (en) | 2011-08-02 | 2011-08-02 | Switch circuit and switch testing system using same |
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| CN202206355U true CN202206355U (en) | 2012-04-25 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102332903A (en) * | 2011-08-02 | 2012-01-25 | 赖德龙 | Switching circuit and switch testing system using same |
| CN105548872A (en) * | 2015-12-09 | 2016-05-04 | 兰州交通大学 | Detection circuit and detection method for detecting on state of non-contact switch |
| CN107561343A (en) * | 2017-09-30 | 2018-01-09 | 杰华特微电子（杭州）有限公司 | A kind of current detection circuit of on-off circuit, electric current detecting method and on-off circuit |
| CN109580992A (en) * | 2017-09-29 | 2019-04-05 | 基思利仪器有限责任公司 | Current leakage and charge injection mitigate solid-state switch |
| CN115441861A (en) * | 2022-11-07 | 2022-12-06 | 杭州加速科技有限公司 | Switch circuit, method and device for reducing electric leakage of switch circuit and ATE (automatic test equipment) |
-
2011
- 2011-08-02 CN CN2011202782522U patent/CN202206355U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102332903A (en) * | 2011-08-02 | 2012-01-25 | 赖德龙 | Switching circuit and switch testing system using same |
| CN105548872A (en) * | 2015-12-09 | 2016-05-04 | 兰州交通大学 | Detection circuit and detection method for detecting on state of non-contact switch |
| CN109580992A (en) * | 2017-09-29 | 2019-04-05 | 基思利仪器有限责任公司 | Current leakage and charge injection mitigate solid-state switch |
| CN107561343A (en) * | 2017-09-30 | 2018-01-09 | 杰华特微电子（杭州）有限公司 | A kind of current detection circuit of on-off circuit, electric current detecting method and on-off circuit |
| CN107561343B (en) * | 2017-09-30 | 2023-07-18 | 杰华特微电子股份有限公司 | Current detection circuit and current detection method of switching circuit and switching circuit |
| CN115441861A (en) * | 2022-11-07 | 2022-12-06 | 杭州加速科技有限公司 | Switch circuit, method and device for reducing electric leakage of switch circuit and ATE (automatic test equipment) |
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