CN206848417U - A kind of high-voltage MOSFET water breakdown voltage multistation parallel measurement device - Google Patents
A kind of high-voltage MOSFET water breakdown voltage multistation parallel measurement device Download PDFInfo
- Publication number
- CN206848417U CN206848417U CN201720657981.6U CN201720657981U CN206848417U CN 206848417 U CN206848417 U CN 206848417U CN 201720657981 U CN201720657981 U CN 201720657981U CN 206848417 U CN206848417 U CN 206848417U
- Authority
- CN
- China
- Prior art keywords
- mosfet
- current
- measurement
- circuit
- measurement device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The utility model discloses a kind of high-voltage MOSFET water breakdown voltage multistation parallel measurement device, including tested enhanced wafer MOSFET multichannels die circuitry, measurement power supply and multichannel measurement selecting switch, the Drain signal common ports of one end connection wafer MOSFET circuits of the measurement power supply, the other end of the measurement power supply are respectively arranged with the low-tension current source connected and bidirectional current limiting circuit with per between the source electrode of die circuitry all the way；The utility model is simple in construction, because using bidirectional current limiting on-off circuit, therefore, the circuit can be not limited to the enhanced MOSFET of positive-negative-positive and the enhanced MOSFET measured devices of NPN type；Simultaneously for diode；Triode；Depletion type MOS FET is applicable.
Description
Technical field
The utility model belongs to integrated circuit testing field, more particularly to a kind of high-voltage MOSFET water breakdown voltage multiplexing
Parallel-by-bit measurement apparatus.
Background technology
High pressure wafer MOSFET（Wafer MOSFET refers to the silicon wafer used in silicon semiconductor production of integrated circuits, due to it
It is shaped as circle, therefore referred to as wafer）Test, it is necessary to be configured with ATE and the placement of analog voltage/current source table
The special equipment probe station of wafer.
There is two ways to realize that high voltage parameter multistation measures in the prior art, mode one is more than by one piece
100V high-tension electricity potential source, is controlled by relay switch, is carried out multistation device and is serially tested.Pricked by probe in device
On source electrode, grid, tested in a serial manner, wafer MOSFET Drain signals are common port, and wafer MOSFET is filled
It is loaded on sucker, draws two wires from the same point of sucker, be connected to voltage source wherein one end.The top surface of MOSFET wafers is
Source electrode, the grid of each tube core, these electrodes are drawn respectively by probe, then by switching control, to be connected to voltage source another
Outer one end is tested, and after a device has been tested, current station relay switch is disconnected, then control adjacent devices relay
Device switch closure, station is tested one by one；The quantity of measured device is determined by probe station design number of probes, then by testing
Machine completes test, and the serial approach testing efficiency is low.
Mode two is more than 100V high-tension electricity potential source in multistation wafer MOSFET tests using polylith, and each is tested
Device is connected to device end more than 100V voltage sources using one piece and tested；This method testing cost is high；High pressure interferes
Problem.
The content of the invention
The purpose of this utility model is to provide a kind of high-voltage MOSFET water breakdown voltage multistation parallel measurement device,
By setting current limiting switch circuit to realize high-voltage MOSFET water breakdown voltage multistation parallel measurement in test circuit,
Improve testing efficiency.
To achieve these goals, the technical solution of the utility model is：A kind of high-voltage MOSFET water breakdown voltage is more
Station parallel measurement device, including tested wafer MOSFET multichannels die circuitry, measurement power supply and multichannel measurement selecting switch,
The Drain signal common ports of one end connection wafer MOSFET circuits of the measurement power supply, each drive test amount selecting switch is every
The grid of die circuitry and source short selecting switch all the way, wherein, the other end of the measurement power supply and every electricity of tube core all the way
The current source and bidirectional current limiting circuit of series connection are respectively arranged between the source electrode on road.
Scheme is further：It is described also to pass through a grid control selections switch connection one per die circuitry grid all the way
Auxiliary voltage source.
Scheme is further：The bidirectional current limiting circuit comprises at least two depletion type MOS tubes, described two metal-oxide-semiconductors
A current-limiting resistance is connected between source electrode, the source electrode of one of metal-oxide-semiconductor connects the grid of another metal-oxide-semiconductor, two metal-oxide-semiconductors
Drain electrode be respectively bidirectional current limiting circuit input/output terminal.
Scheme is further：The current source of the series connection and the position of bidirectional current limiting circuit can exchange.
Scheme is further：The polarity connection selection of the measurement both ends of power depends on tested enhanced wafer
MOSFET multichannel die circuitries are that positive-negative-positive is enhanced or NPN type is enhanced.
Scheme is further：The multichannel measurement selecting switch is matrix electronic selected on-off circuit.
The beneficial effects of the utility model are：It is simple in construction, due to using bidirectional current limiting on-off circuit, therefore, being somebody's turn to do
Circuit can be not limited to the enhanced MOSFET of positive-negative-positive and the enhanced MOSFET measured devices of NPN type；Simultaneously for diode；
Triode；Depletion type MOS FET is applicable.
The utility model is described in detail with reference to the accompanying drawings and examples.
Brief description of the drawings
Fig. 1 is the utility model circuit diagram；
Fig. 2 is the utility model bidirectional current limiting circuit diagram.
Embodiment
A kind of high-voltage MOSFET water breakdown voltage multistation parallel measurement device, as shown in figure 1, described device includes quilt
Wafer MOSFET multichannels die circuitry 1, measurement power supply 2 and the multichannel measurement selecting switch 3 of survey, one end of the measurement power supply connect
Connect the Drain signal common ports of wafer MOSFET circuits（Drain electrode）, each drive test amount selecting switch has two groups of switches, and first group is opened
It is per the grid of die circuitry and source short selecting switch, second group of switch 302 are to connect auxiliary voltage source 4 all the way to close 301
Enter the grid control selections switch per die circuitry grid all the way, wherein, the other end and the every tube core all the way of the measurement power supply
The current source 5 and bidirectional current limiting circuit 6 of series connection, low-tension current source 5 and bidirectional current limiting electricity are respectively arranged between the source electrode of circuit
Road 6 can be that mode as illustrated is reached the standard grade arrangement, can also location swap arranged in series, that is, the current source of the series connection
It can be exchanged with the position of bidirectional current limiting circuit；Certainly above-mentioned and wafer MOSFET multichannel die circuitries connection is all to pass through pin
What the probe of bed was realized, that is to say, that the present apparatus also includes needle-bar, measures selecting switch and the current source connected and two-way limit
Current circuit is connected by the probe of needle-bar with wafer MOSFET multichannel die circuitries.Measurement power supply therein is high-tension measurement electricity
Source, current source are low-tension current sources.
Need to be using what first group of switch 301 was formed only as general wafer MOSFET multichannels die circuitry in such scheme
General multi parallel-by-bit measurement apparatus, when needing to measure enhanced wafer MOSFET multichannel die circuitries, in first group of switch
What is formed on the basis of 301 plus second group of switch 302 is that enhanced wafer MOSFET multichannels die circuitry multiplexing parallel-by-bit is surveyed
Measure device.
Wherein：It is more that the polarity connection selection of the high-tension measurement both ends of power depends on tested enhanced wafer MOSFET
Road die circuitry is that positive-negative-positive is enhanced or NPN type is enhanced, that is to say, that when multichannel die circuitry is, NPN type is enhanced
When, the polarity of power supply is upper just lower negative；When multichannel die circuitry is that positive-negative-positive is enhanced, the polarity of power supply for it is upper it is negative under just.
In embodiment, bidirectional current limiting circuit can be with kinds of schemes, the preferred scheme of the present embodiment：The bidirectional current limiting electricity
Road comprises at least two depletion type MOS tubes, and the present embodiment is the depletion type MOS tube or different shaped of two same models
Number, a current-limiting resistance is connected between the source electrode of described two metal-oxide-semiconductors, the source electrode of one of metal-oxide-semiconductor connects another MOS
The grid of pipe（Fly-wheel diode is provided between metal-oxide-semiconductor source electrode in itself and drain electrode, i.e. the positive pole of diode connects the source of metal-oxide-semiconductor
Pole, the positive pole of diode connect the drain electrode of metal-oxide-semiconductor）, the drain electrode of two metal-oxide-semiconductors is respectively the input/output terminal of bidirectional current limiting circuit,
Its operation principle is：Circuit is accessed at A, B both ends of circuit, by die circuitry be NPN type it is enhanced exemplified by：The A ends of circuit connect
The source electrode of die circuitry is connect, the B ends connection low-tension current source of circuit, when no current, a current potentials in circuit are equal with b current potentials
Depletion type MOS tube Q1 is in the conduction state by diode in parallel on Q2, can normally measure, and works as certain in measurement all the way
Abnormal die circuitry is that electric current can increase with the direction of arrow 7, and a current potentials in circuit will become with b current potentials when damaging
Change, when a current potentials reach certain numerical value higher than b current potentials, this test loop is cut off in depletion type MOS tube Q1 cut-offs, otherwise electric current is anti-
To flowing, then this test loop is cut off in depletion type MOS tube Q2 cut-offs, and then realizes a kind of function of bidirectional current limiting.Therefore, protect
Demonstrate,prove when certain shorted devices, the high-voltage power supply output voltage of configuration will not cause other works by abnormal device voltage pull-down
Position device can not proper testing；After using this current-limiting circuit, short-circuit device can be limited by current-limiting protection circuit, electric current
Firmly, such high-tension electricity potential source would not be affected, and other stations can be normally carried out testing, if improving p-wire in test
Road is pressure-resistant can to seal in several groups of identical bidirectional current limiting circuits more；When current-limiting circuit is not up to cut-off current, equivalent to one certain resistance
The resistance of value（It is long logical state）, after the current value for reaching current limliting, during the voltage increase at its both ends, current value is not further added by,
Have the function that current-limiting protection.
In embodiment, for example, to test 600V wafer MOSFET product BVDSS parameters, it is necessary to be equipped with one piece of high-voltage power supply with it is more
Block low-tension current source（Particular number is determined by the quantity of probe station bundle device）；A rational electricity is provided firstly the need of high-voltage power supply
Pressure（550V）；By polylith low-tension current source each to corresponding measured device constant current；Test the 50V voltages of surplus；Its low pressure is phase
For high pressure, i.e., less than high-voltage power supply voltage, realize the high pressure parallel measurement of product.
The present embodiment is not limited to the enhanced MOSFET of positive-negative-positive and the enhanced MOSFET measured devices of NPN type；Simultaneously for
Diode；Triode；Depletion type MOS FET is applicable.And the circuit can also leak electricity parameter testing parallel, simply by constant current
Pressure measurement is changed to constant pressure flow measurement, expands Test coverage face.
Claims (6)
1. a kind of high-voltage MOSFET water breakdown voltage multistation parallel measurement device, including tested wafer MOSFET Multipath tubes
Core circuit, measurement power supply and multichannel measurement selecting switch, the Drain of one end connection wafer MOSFET circuits of the measurement power supply
Signal common port, each drive test amount selecting switch are per the grid of die circuitry and source short selecting switch all the way, its feature
Be, the other end of the measurement power supply and per the source electrode of die circuitry all the way between be respectively arranged with the current source connected and pair
To current-limiting circuit.
2. multistation parallel measurement device according to claim 1, it is characterised in that described per die circuitry grid all the way
Also pass through grid control selections switch one auxiliary voltage source of connection.
3. multistation parallel measurement device according to claim 1, it is characterised in that the bidirectional current limiting circuit at least wraps
Two depletion type MOS tubes are included, a current-limiting resistance, the source of one of metal-oxide-semiconductor are connected between the source electrode of described two metal-oxide-semiconductors
Pole connects the grid of another metal-oxide-semiconductor, and the drain electrode of two metal-oxide-semiconductors is respectively the input/output terminal of bidirectional current limiting circuit.
4. multistation parallel measurement device according to claim 1, it is characterised in that the current source of the series connection and two-way
The position of current-limiting circuit can exchange.
5. multistation parallel measurement device according to claim 1, it is characterised in that the polarity of the measurement both ends of power
It is that positive-negative-positive is enhanced or NPN type is enhanced that connection selection, which depends on tested enhanced wafer MOSFET multichannel die circuitries,.
6. multistation parallel measurement device according to claim 1, it is characterised in that the multichannel measurement selecting switch is
Matrix electronic selected on-off circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720657981.6U CN206848417U (en) | 2017-06-08 | 2017-06-08 | A kind of high-voltage MOSFET water breakdown voltage multistation parallel measurement device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720657981.6U CN206848417U (en) | 2017-06-08 | 2017-06-08 | A kind of high-voltage MOSFET water breakdown voltage multistation parallel measurement device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206848417U true CN206848417U (en) | 2018-01-05 |
Family
ID=60799056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720657981.6U Active CN206848417U (en) | 2017-06-08 | 2017-06-08 | A kind of high-voltage MOSFET water breakdown voltage multistation parallel measurement device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206848417U (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108594103A (en) * | 2018-04-23 | 2018-09-28 | 长江存储科技有限责任公司 | The measurement structure and method of MOSFET overshoot voltages and undershoot voltage |
| CN108761284A (en) * | 2018-05-18 | 2018-11-06 | 北京华峰测控技术股份有限公司 | Drain leakage test circuit in field-effect tube breakdown voltage characteristics and method |
| CN110286309A (en) * | 2019-07-19 | 2019-09-27 | 北京华峰测控技术股份有限公司 | Wafer parallel testing device, method and system |
| CN110658394A (en) * | 2018-06-29 | 2020-01-07 | 北京华峰测控技术股份有限公司 | Multi-station concurrent test method, control station and multi-station concurrent test device |
| CN110954842A (en) * | 2018-09-25 | 2020-04-03 | 财团法人工业技术研究院 | Test system, test method for test system and test carrier |
| WO2020093238A1 (en) * | 2018-11-06 | 2020-05-14 | Yangtze Memory Technologies Co., Ltd. | Time Dependent Dielectric Breakdown Test Structure and Test Method Thereof |
| CN111505473A (en) * | 2019-01-31 | 2020-08-07 | 佛山市顺德区顺达电脑厂有限公司 | Power supply mosfet detection device |
| CN113030676A (en) * | 2021-02-26 | 2021-06-25 | 陕西三海测试技术开发有限责任公司 | Diode triode wafer testing method based on near particle method |
-
2017
- 2017-06-08 CN CN201720657981.6U patent/CN206848417U/en active Active
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108594103A (en) * | 2018-04-23 | 2018-09-28 | 长江存储科技有限责任公司 | The measurement structure and method of MOSFET overshoot voltages and undershoot voltage |
| CN108594103B (en) * | 2018-04-23 | 2020-06-09 | 长江存储科技有限责任公司 | Structure and method for measuring overshoot voltage and undershoot voltage of MOSFET (Metal-oxide-semiconductor field Effect transistor) |
| CN108761284A (en) * | 2018-05-18 | 2018-11-06 | 北京华峰测控技术股份有限公司 | Drain leakage test circuit in field-effect tube breakdown voltage characteristics and method |
| CN110658394A (en) * | 2018-06-29 | 2020-01-07 | 北京华峰测控技术股份有限公司 | Multi-station concurrent test method, control station and multi-station concurrent test device |
| CN110658394B (en) * | 2018-06-29 | 2021-06-25 | 北京华峰测控技术股份有限公司 | Multi-station concurrent test method, control station and multi-station concurrent test device |
| CN110954842A (en) * | 2018-09-25 | 2020-04-03 | 财团法人工业技术研究院 | Test system, test method for test system and test carrier |
| WO2020093238A1 (en) * | 2018-11-06 | 2020-05-14 | Yangtze Memory Technologies Co., Ltd. | Time Dependent Dielectric Breakdown Test Structure and Test Method Thereof |
| CN111812472A (en) * | 2018-11-06 | 2020-10-23 | 长江存储科技有限责任公司 | Time-dependent dielectric breakdown test structure and test method thereof |
| US11187740B2 (en) | 2018-11-06 | 2021-11-30 | Yangtze Memory Technologies Co., Ltd. | Time dependent dielectric breakdown test structure and test method thereof |
| CN111505473A (en) * | 2019-01-31 | 2020-08-07 | 佛山市顺德区顺达电脑厂有限公司 | Power supply mosfet detection device |
| CN110286309A (en) * | 2019-07-19 | 2019-09-27 | 北京华峰测控技术股份有限公司 | Wafer parallel testing device, method and system |
| CN113030676A (en) * | 2021-02-26 | 2021-06-25 | 陕西三海测试技术开发有限责任公司 | Diode triode wafer testing method based on near particle method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN206848417U (en) | A kind of high-voltage MOSFET water breakdown voltage multistation parallel measurement device | |
| CN204649917U (en) | A kind of measurement mechanism of MOSFET wafer conducting resistance | |
| CN101728826B (en) | Input surge protection device adopting junction field effect transistor | |
| CN103837731A (en) | Voltage detecting circuit and method for measuring characteristic of transistor | |
| CN101769964A (en) | Method, device and system for testing conducting resistance of packaged field-effect tube | |
| CN108828422B (en) | Avalanche tolerance test circuit | |
| CN108718150B (en) | High-frequency and high-voltage dynamic conduction impedance based on AlGaN/GaN HEMT device extracts circuit and extracting method | |
| CN102226831B (en) | Chip testing method and testing circuit of lithium battery protective chip | |
| CN103592591A (en) | IGBT module testing circuit and method on condition of no antiparallel diode | |
| CN208334553U (en) | A kind of drain leakage current test circuit in field-effect tube breakdown voltage characteristics | |
| CN106057111B (en) | Test circuit and liquid crystal display panel | |
| CN103929162B (en) | Gate driving circuit, power switch circuit and grid drive method | |
| CN105609023B (en) | A kind of testing element group, array substrate, detection device and detection method | |
| CN115267466B (en) | Test system for characteristic research under dynamic working condition of gallium nitride power device | |
| CN107064767A (en) | The IGBT test circuits of resistance, electric capacity continuously adjustabe | |
| CN102157415B (en) | Method for testing wafer parameters of bare chips | |
| CN202206355U (en) | Switch circuit and switch testing system using same | |
| CN109752638A (en) | A kind of device and method of continuous measurement igbt chip curve of output | |
| CN107015133B (en) | The test structure and method of metal-oxide-semiconductor conducting resistance | |
| CN114545185A (en) | Gallium nitride bidirectional switch pulse test system based on state machine mode | |
| CN105182227A (en) | Relay aging instrument | |
| CN102818923A (en) | System and method for measuring output voltage of internal power source of chip | |
| CN107991543A (en) | The gate charge measurement circuit and its measuring method of insulated gate bipolar transistor | |
| CN102332903B (en) | Switching circuit and switch testing system using same | |
| CN203720310U (en) | MOS tube test circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 100070 Beijing city Fengtai District Haiying Road No. 1 Building 2 layer 7 Patentee after: Beijing Hua Feng measurement and control technology Limited by Share Ltd Address before: 100070 Beijing city Fengtai District Haiying Road No. 1 Building 2 layer 7 Patentee before: BEIJING HUAFENG TEST & CONTROL TECHNOLOGY CO., LTD. |