CN108761284A - Drain leakage test circuit in field-effect tube breakdown voltage characteristics and method - Google Patents
Drain leakage test circuit in field-effect tube breakdown voltage characteristics and method Download PDFInfo
- Publication number
- CN108761284A CN108761284A CN201810476793.2A CN201810476793A CN108761284A CN 108761284 A CN108761284 A CN 108761284A CN 201810476793 A CN201810476793 A CN 201810476793A CN 108761284 A CN108761284 A CN 108761284A
- Authority
- CN
- China
- Prior art keywords
- voltage
- current
- operational amplifier
- power supply
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 93
- 230000005669 field effect Effects 0.000 title claims abstract description 63
- 230000015556 catabolic process Effects 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 14
- 230000003321 amplification Effects 0.000 claims abstract description 46
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 46
- 238000002955 isolation Methods 0.000 claims abstract description 40
- 230000002457 bidirectional effect Effects 0.000 claims description 21
- 230000005611 electricity Effects 0.000 claims description 15
- 238000005259 measurement Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000010998 test method Methods 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
- G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
- G01R31/1263—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
- G01R31/129—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation of components or parts made of semiconducting materials; of LV components or parts
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
Abstract
The invention discloses the drain leakage test circuits and method in a kind of field-effect tube breakdown voltage characteristics, circuit includes test voltage source and tested field-effect tube, there are one current/voltage-converted amplification modules for setting between the anode and FET drain D in test voltage source, the voltage output signal of current/voltage-converted amplification module is sent to the signal input part of an isolated amplifier module, the current/voltage-converted amplification module is made of operational amplifier and sample resistance, and the isolation output end of the isolated amplifier module connects a microprocessor unit.The present invention in drain side by utilizing current-to-voltage converting circuit to replace the ammeter being directly arranged, hardware is tested using a set of voltmeter, and the test realized to leakage current is connect with current-to-voltage converting circuit, simply, measuring accuracy is high, and N measured device of concurrent testing in multistation is realized on the basis of a set of voltmeter hardware, measuring accuracy and efficiency are improved, hardware cost is saved.
Description
Technical field
The invention belongs to discrete device circuit test fields, and in particular to the leakage in a kind of field-effect tube breakdown voltage characteristics
Pole leakage current test circuit and method.
Background technology
In integrated circuit testing field, various types of MOSFET or other discrete devices are required to carry out device pin
Between leakage tests need to input high electricity when testing device when being device under the characteristic with high-breakdown-voltage
It presses to measure（Such as：The MOSFET and third generation semiconductor devices GaN gallium nitride FET silicon of first generation Si silicon substrates
Deng）.
MOSFET classes（MOSFET corresponding to first generation semi-conducting material Si silicon can be connected on device when measuring leakage current
The ends S of part（Source electrode）It measures；But the corresponding discrete devices of third generation semi-conducting material GaN, current test request are at the ends D
Measure leakage current）Device is at the ends D measuring technology requirement when leaking electricity（Drain electrode）Test electric current, the simplest test of use
Mode such as Fig. 1, the ends D between voltage source and measured device（Drain electrode）Ammeter is connected, the value by reading ammeter obtains the ends D
Electric current, but such measurement method is since common-mode voltage is high, tested electric current is nA magnitudes, therefore it is required that ammeter have it is very high
Precision, but the ammeter for meeting such environment and required precision is few, and it is expensive.
For technical solution shown in FIG. 1, since this kind of device has the characteristic of high-breakdown-voltage, needed in test defeated
Enter high voltage（Such as 650v or so）, the case where this generates high common modes, but in the case of high common mode, when tested electric current
Very hour（Such as nA Naan magnitudes）, because being interfered by high common mode, can not ensure measurement accuracy.Therefore, this field
Technical staff designs another technical solution, such as Fig. 2, series electrical flow table is distinguished at the ends G of device and the ends S, by measuring G
End（Grid）With the ends S（Source electrode）Electric current, then by the electric current at this both ends be added, calculate the electric current at the ends D, such mode phase
Comparing the technical solution of Fig. 1 reduces requirement to ammeter common-mode voltage input range, from the ends D be transformed into the ends G and the ends S into
Row measures, but this mode does not follow the technology requirement measured at the ends D, and the numerical value obtained is not in the practical survey in the ends D
It measures, all there is certain error due to measuring, two end value errors being added there are the value of error can bigger.
Invention content
The purpose of the present invention is to propose in a kind of field-effect tube breakdown voltage characteristics drain leakage test circuit and side
Method, the circuit are adhered at the ends D（Drain electrode）Electric current is tested, by the ends D（Drain electrode）Side is replaced straight using current-to-voltage converting circuit
Setting ammeter is connect, testing hardware using a set of voltmeter connect the test realized to leakage current with current-to-voltage converting circuit,
And N measured device of concurrent testing in multistation is realized on the basis of a set of voltmeter hardware, improves survey
Precision and efficiency are tried, hardware cost is saved.
To achieve the goals above, the technical scheme is that：
A kind of drain leakage test circuit in field-effect tube breakdown voltage characteristics, including test voltage source and tested field-effect
Pipe, test voltage source are used for the drain D to being tested field-effect tube and source S application voltage, wherein the anode in test voltage source
There are one current/voltage-converted amplification module, the electricity of current/voltage-converted amplification module for setting between FET drain D
Pressure output signal is sent to the signal input part of an isolated amplifier module, the current/voltage-converted amplification module be by
Operational amplifier obtains sample resistance signal and forms current/voltage-converted, and the isolation output end of the isolated amplifier module connects
A microprocessor unit is connect, the microprocessor unit is according to isolated amplifier module rfpa output signal and current/voltage
It converts amplification module gain amplifier relationship and calculates the drain leakage that output measures.
Scheme is further：One isolated power supply with floating reference ground potential amplifies to the current/voltage-converted
The operational amplifier of module and the isolation input end side of isolated amplifier module provide positive and negative power supply and floating reference ground potential,
The isolated power supply include identical first DC power supply of two specifications and models and the second DC power supply, the first DC power supply it is defeated
Go out the positive floating connecting described in formation that cathode links together with the output cathode of the second DC power supply with test voltage source
Ground reference, the isolation input end side of the output cathode of the first DC power supply as operational amplifier and isolated amplifier module
Cathode power supply input, the isolation input of the output negative pole of the second DC power supply as operational amplifier and isolated amplifier module
The negative power supply of end side inputs.
Scheme is further：The operational amplifier of the current/voltage-converted amplification module is by the first operational amplifier
With the difference channel of second operational amplifier composition, the sample resistance is serially connected in the anode in test voltage source and field-effect tube is leaked
Between the D of pole, the both ends of the sample resistance are separately connected the first operational amplifier and the electrode input end of second operational amplifier,
First operational amplifier and the negative input of second operational amplifier are separately connected respective operational amplifier output terminal, described
First operational amplifier and the output end signal of second operational amplifier are transmitted by a programmable gain amplifier of connection
To the input terminal of the isolated amplifier module.
Scheme is further：The operational amplifier of the current/voltage-converted amplification module is by third operational amplifier
The tandem amplifying circuit formed with four-operational amplifier, the electrode input end connecting test voltage source of third operational amplifier
The negative input of anode, third operational amplifier connects FET drain D by a resistance, third operational amplifier
Output end connects the electrode input end of four-operational amplifier, and the negative input of four-operational amplifier is put by the first ratio
Big resistance connects ground reference, and the negative input of four-operational amplifier passes through the 4th fortune of the second ratio enlargement resistance connection
The output end of amplifier is calculated, the sample resistance both ends are separately connected negative input and the third operation of third operational amplifier
The output end of amplifier, the output end of four-operational amplifier connect the signal at the isolation input end of the isolated amplifier module
Input terminal.
Scheme is further：The tested field-effect tube have it is multiple, each field-effect tube be separately connected there are one electric current/
Voltage converts amplification module and the isolated amplifier module, current/voltage-converted amplification module and FET drain D it
Between concatenation there are one bidirectional current limiting circuit, the bidirectional current limiting circuit includes at least two depletion type MOS tubes, described two to exhaust
A current-limiting resistance is connected between the source electrode of type metal-oxide-semiconductor, the source electrode of one of depletion type MOS tube connects another depletion type
The drain electrode of the grid of metal-oxide-semiconductor, two depletion type MOS tubes is respectively the input/output terminal of bidirectional current limiting circuit.
Scheme is further：The setting value of the current-limiting resistance is when tested field-effect tube leakage current is more than rated value 1.2
Times when cut off the power the resistance value of access.
A kind of drain leakage test method in field-effect tube breakdown voltage characteristics is based on drain leakage current test electricity
The test method on road, the test circuit include test voltage source and tested field-effect tube, and test voltage source is used for being tested field
The drain D and source S of effect pipe apply voltage, between the anode and FET drain D in test voltage source there are one settings
The voltage output signal of current/voltage-converted amplification module, current/voltage-converted amplification module is sent to an isolated amplifier
The input terminal of module, the current/voltage-converted amplification module are made of operational amplifier and sample resistance, the isolation amplification
The isolation output end of device module connects a microprocessor unit, and the test voltage source of breakdown voltage characteristics rated value is exported electricity
Pressure is applied in the drain D and source S of tested field-effect tube, wherein the method is：
The first step：Input sample resistance value, the yield value that final signal amplifies and the rated value for allowing leakage current；
Second step：The voltage value for obtaining isolated amplifier module isolation output end, passes through meter according to sample resistance value and yield value
Calculate the leakage current value that the voltage value measured is converted to drain D end；
Third walks：The drain D end leakage current value measured is compared with the leakage current rated value of input, when the leakage current of measurement
When value is more than leakage current rated value, judge that being tested field-effect tube cannot pass through, when the leakage current value of measurement is specified less than leakage current
When value, judge that being tested field-effect tube passes through.
Scheme is further：One isolated power supply with floating reference ground potential amplifies to the current/voltage-converted
The operational amplifier of module and the isolation input end side of isolated amplifier module provide positive-negative power and floating reference ground potential, institute
It includes identical first DC power supply of two specifications and models and the second DC power supply, the output of the first DC power supply to state isolated power supply
Cathode, which links together to connect with the anode in test voltage source with the output cathode of the second DC power supply, forms the floating ginseng
Ground potential is examined, the output cathode of the first DC power supply is as the isolation input end side of operational amplifier and isolated amplifier module
Cathode power supply inputs, the isolation input end of the output negative pole of the second DC power supply as operational amplifier and isolated amplifier module
The negative power supply of side inputs.
Scheme is further：The tested field-effect tube have it is multiple, each field-effect tube be separately connected there are one electric current/
Voltage converts amplification module and the isolated amplifier module, current/voltage-converted amplification module and FET drain D it
Between concatenation there are one bidirectional current limiting circuit, the bidirectional current limiting circuit includes at least two depletion type MOS tubes, described two to exhaust
A current-limiting resistance is connected between the source electrode of type metal-oxide-semiconductor, the source electrode of one of depletion type MOS tube connects another depletion type
The drain electrode of the grid of metal-oxide-semiconductor, two depletion type MOS tubes is respectively the input/output terminal of bidirectional current limiting circuit, the current-limiting resistance
Setting value be the resistance value of access of cutting off the power when tested field-effect tube leakage current is more than 1.2 times of rated value.
Scheme is further：It is described that the test voltage source output voltage of breakdown voltage characteristics rated value is applied to tested field
Include in the drain D and source S of effect pipe：The output voltage for adjusting test voltage source is risen from 0 volt with 100 volts of rate per second
Drain D and the source S for being applied to tested field-effect tube are specified up to breakdown voltage characteristics rated value, or by breakdown voltage characteristics
The output voltage in the test voltage source of value is applied directly in the drain D and source S of tested field-effect tube.
The present invention passes through at the ends D（Drain electrode）The ammeter that side replaces directly being arranged using current-to-voltage converting circuit utilizes
A set of voltmeter test hardware connect the test realized to leakage current with current-to-voltage converting circuit, and simply, measuring accuracy is high, and
And realization improves test in N measured device of concurrent testing of multistation on the basis of a set of voltmeter hardware
Precision and efficiency save hardware cost.
The present invention is described in detail with reference to the accompanying drawings and examples.
Description of the drawings
Fig. 1 is the circuit diagram that conventional MOS FET pipes test leakage current in the end sides D by ammeter；
Fig. 2 is the circuit diagram that conventional MOS FET pipes test leakage current in the end sides S by ammeter；
Fig. 3 is that MOSFET pipes of the present invention test the circuit diagram of leakage current in the end sides D；
Fig. 4 is isolated power supply circuit diagram of the present invention；
Fig. 5 is the circuit diagram of test leakage current of the present invention with programmable gain amplifier；
Fig. 6 is that current/voltage-converted amplification module of the present invention is tandem amplifying circuit schematic diagram；
Fig. 7 is the circuit diagram for the test leakage current that the present invention has current-limiting circuit；
Fig. 8 is bidirectional current limiting circuit diagram of the present invention.
Specific implementation mode
Embodiment 1：
Drain leakage test circuit in a kind of field-effect tube breakdown voltage characteristics, as shown in figure 3, the drain leakage is surveyed
Examination circuit includes test voltage source 1 and tested field-effect tube 2, and test voltage source is used for the drain D to being tested field-effect tube and source
Pole S applies voltage, wherein there are one current/voltages to turn for setting between the anode and FET drain D in test voltage source 1
Amplification module 3 is changed, the voltage output signal of current/voltage-converted amplification module is sent to the letter of an isolated amplifier module 4
Number input terminal, the current/voltage-converted amplification module are to obtain sample resistance signal by operational amplifier to form current/voltage
Conversion, the isolation output end of the isolated amplifier module connect a microprocessor unit 5, the microprocessor unit according to
Isolated amplifier module rfpa output signal and current/voltage-converted amplification module gain amplifier relationship calculate the leakage that output measures
Pole leakage current is provided with grid power supply member simultaneously as a kind of population parameter test circuit in the grid of the tested field-effect tube 2
6, wherein the isolated amplifier module 4 is a kind of module of the prior art, the present embodiment is using model ISO121
Isolated amplifier, can also connect a voltmeter in the isolation output end of the isolated amplifier module and carry out range estimation prison
Depending on the setting range in test voltage source is ± 1000V to ± 3000V.
In general, the drain leakage of field-effect tube is the weak current of microampere order, in order to reduce interference, improve measurement accuracy,
Operation in embodiment using from a kind of isolated power supply with floating reference ground potential to the current/voltage-converted amplification module
Amplifier, the isolation input end side offer positive and negative power supply of isolated amplifier module and floating reference ground potential, the isolation electricity
Source includes identical first DC power supply of two specifications and models and the second DC power supply, the output negative pole of the first DC power supply and the
The output cathode of two DC power supplies, which links together to connect with the anode in test voltage source, forms the floating reference ground potential
FGND, the anode of the output cathode of the first DC power supply as operational amplifier and the isolation input end side of isolated amplifier module
Power input FVDD, the isolation input end of the output negative pole of the second DC power supply as operational amplifier and isolated amplifier module
The negative power supply of side inputs FVEE.Wherein：First DC power supply and the second DC power supply can be DC-DC power sources, can also be
The DC output power being made of transformer or large bulk capacitance, Fig. 4 illustrate DC-DC power source, including two specifications and models phases
Same the first DC-DC power source 7 and the second DC-DC power source 8, the anode and cathode of the DC power supply 9 of a 5V are separately connected first
The input anode and cathode of DC-DC power source and the second DC-DC power source, the output negative pole of the first DC-DC power source and the 2nd DC-DC electricity
The output cathode in source links together and connect the floating reference ground potential FGND described in being formed with the anode in test voltage source, and first
Cathode power supply of the output 15V anodes of DC-DC power source as operational amplifier and the isolation input end side of isolated amplifier module
Input FVDD, the isolation input end of the output 15V cathode of the second DC-DC power source as operational amplifier and isolated amplifier module
The negative power supply of side inputs FVEE.The positive and negative power supply and microprocessor list of isolated power supply isolation output end in embodiment
The power supply of member is that independent power supply is isolated with isolated power supply and test voltage source.
There are two types of preferred embodiments for current/voltage-converted amplification module 3 in embodiment：
The first preferred embodiment therein is as shown in figure 5, the operational amplifier of the current/voltage-converted amplification module is by
The difference channel of one operational amplifier Q1 and second operational amplifier Q2 compositions, the sample resistance R1 are serially connected in test voltage source
Anode and FET drain D between, the both ends of the sample resistance are separately connected the first operational amplifier and the second operation
The negative input of the electrode input end of amplifier, the first operational amplifier and second operational amplifier is separately connected respective fortune
The output end signal of calculation amplifier out, first operational amplifier and second operational amplifier can by one of connection
Programming gain amplifier 10 is sent to the input terminal of the isolated amplifier module, and programmable gain amplifier is a kind of existing skill
Art, what the present embodiment was selected is the programmable gain amplifier of model PGA202 or PGA204, and gain is respectively G=1；G=10；
G=100；G=1,000 4 adjustable gain, difference channel use AD711 devices.
Second of preferred embodiment therein is as shown in fig. 6, the operational amplifier of the current/voltage-converted amplification module is
The anode of the tandem amplifying circuit being made of third operational amplifier Q3 and four-operational amplifier Q4, third operational amplifier is defeated
Enter to hold the anode of connecting test voltage source, the negative input of third operational amplifier to pass through a resistance R2 connection field-effect tube
Drain D, the electrode input end of the output end connection four-operational amplifier of third operational amplifier, four-operational amplifier are born
Pole input terminal passes through by the first ratio enlargement resistance R3 connection ground references, the negative input of four-operational amplifier
The output end of two ratio enlargement resistance R4 connection four-operational amplifiers, the both ends the sample resistance R1 are separately connected third operation
The output end of the output end of the negative input and third operational amplifier of amplifier, four-operational amplifier connects the isolation
The signal input part at the isolation input end of amplifier module；The gain amplifier GAIN=1+R4/R3 of four-operational amplifier；When
Four-operational amplifier Q4 can also so be removed, the output end of third operational amplifier is directly connected to the isolated amplifier mould
The signal input part at the isolation input end of block.
In order to realize that multistation works, solves one of station and break down（Such as the situation of short circuit）, then test
Numerical value will be incorrect, needs to close the station to break down, remeasures the numerical value of normal station, the measurement work repeated, nothing
Method improves the problem of working efficiency, and the present embodiment is realized using following circuit arrangement：
In the state that multistation works, the tested field-effect tube is that have multiple, and each field-effect tube is separately connected
There are one current/voltage-converted amplification module and the isolated amplifier modules, as shown in fig. 7, amplifying in current/voltage-converted
Bidirectional current limiting circuit 11 there are one being concatenated between module and FET drain D, as shown in figure 8, the bidirectional current limiting circuit is extremely
Include two depletion type MOS tubes Q5 and Q6 less, a current-limiting resistance R5 connected between the source electrode of described two depletion type MOS tubes,
The source electrode of one of depletion type MOS tube connects the grid of another depletion type MOS tube, the source electrode of two depletion type MOS tubes
Bridge a diode 12, the source electrode of the anode connection depletion type MOS tube of diode, the cathode of diode respectively between drain electrode
The drain electrode of depletion type MOS tube is connected, in fact, diode 12 is two pole of afterflow of the internal self-assembling formation of depletion type MOS tube itself
The drain electrode of pipe, two depletion type MOS tubes is respectively the input/output terminal A and B of bidirectional current limiting circuit.Wherein：The current-limiting resistance
Setting value be the resistance value of access of cutting off the power when tested field-effect tube leakage current is more than 1.2 times of rated value.
Bidirectional current limiting circuit operation principle is：Circuit is accessed at the both ends A, B of circuit, is NPN with field-effect die circuitry
For type is enhanced：The ends A of circuit connect current/voltage-converted amplification module, and the ends B of circuit connect FET drain D, when
When no current, a current potentials depletion type MOS tube Q5 equal with b current potentials in circuit is on by diode in parallel on Q6
State can be measured normally, and when certain in measurement all the way die circuitry it is abnormal for damage when, electric current can be with 13 meaning side of arrow
To increase, a current potentials in circuit will change with b current potentials, the depletion type MOS tube when a current potentials reach certain numerical value higher than b current potentials
This test loop is cut off in Q5 cut-offs, otherwise this test loop is cut off in reverse direction current flow, then depletion type MOS tube Q6 cut-offs,
And then realize a kind of function of bidirectional current limiting.Thus it is guaranteed that when certain shorted devices, the high-voltage power supply output voltage of configuration is not
It can cause other station devices can not proper testing by abnormal device voltage pull-down；It is short-circuit after using this current-limiting circuit
Device can be locked by current-limiting protection circuit, electric current, and such high-voltage electricity potential source would not be affected, and other stations can be with
It is normally carried out test, if several groups of identical bidirectional current limiting circuits can be sealed in more by improving measurement circuit pressure resistance in test；Current limliting electricity
When road is not up to cut-off current, it is equivalent to the resistance of certain resistance value（It is long logical state）, after the current value for reaching current limliting,
When the voltage at both ends increases, current value is not further added by, and has the function that current-limiting protection.
Embodiment 2：
A kind of drain leakage test method in field-effect tube breakdown voltage characteristics is surveyed based on 1 drain leakage of embodiment
The test method of circuit is tried, therefore the content in embodiment 1 should be the content done in the present embodiment.Therefore, the test circuit
Including test voltage source and tested field-effect tube, test voltage source is used for the drain D to being tested field-effect tube and source S application electricity
Pressure, the current/voltage-converted amplification module there are one settings between the anode and FET drain D in test voltage source, electric current/
The voltage output signal of voltage conversion amplification module is sent to the input terminal of an isolated amplifier module, the current/voltage
Conversion amplification module is made of operational amplifier and sample resistance, and the isolation output end of the isolated amplifier module connects one
The test voltage source output voltage of breakdown voltage characteristics rated value is applied to the drain electrode of tested field-effect tube by microprocessor unit
On D and source S, wherein the method is：
The first step：Input sample resistance value, the yield value that final signal amplifies and the rated value for allowing leakage current；
Second step：The voltage value for obtaining isolated amplifier module isolation output end, passes through meter according to sample resistance value and yield value
Calculate the leakage current value that the voltage value measured is converted to drain D end；Calculating process is：By the voltage for measuring acquisition want divided by for
Gain factor；Then using divided by gain factor after voltage value go divided by sampling resistor R1, the result calculated in this way
It is exactly the leakage current value of measured device.
Third walks：The drain D end leakage current value measured is compared with the leakage current rated value of input, when the leakage of measurement
When current value is more than leakage current rated value, judge that being tested field-effect tube cannot pass through, when the leakage current value of measurement is less than leakage current
When rated value, judge that being tested field-effect tube passes through.
In embodiment：One isolated power supply with floating reference ground potential is to the current/voltage-converted amplification module
Operational amplifier and the isolation input end side of isolated amplifier module positive-negative power and floating reference ground potential be provided, it is described every
Include identical first DC power supply of two specifications and models and the second DC power supply, the output negative pole of the first DC power supply from power supply
It links together with the output cathode of the second DC power supply and is connect with forming the floating reference with the anode in test voltage source
Current potential FGND, the output cathode of the first DC power supply is as the isolation input end side of operational amplifier and isolated amplifier module
Cathode power supply inputs FVDD, and the output negative pole of the second DC power supply is defeated as the isolation of operational amplifier and isolated amplifier module
Enter the negative power supply input FVEE of end side.
In embodiment：The tested field-effect tube has multiple, each field-effect tube is separately connected there are one current/voltage
Amplification module and the isolated amplifier module are converted, is gone here and there between current/voltage-converted amplification module and FET drain D
It connects there are one bidirectional current limiting circuit, the bidirectional current limiting circuit includes at least two depletion type MOS tubes, described two depletion types
A current-limiting resistance is connected between the source electrode of metal-oxide-semiconductor, the source electrode of one of depletion type MOS tube connects another depletion type
The grid of metal-oxide-semiconductor bridges a diode between the source electrode and drain electrode of two depletion type MOS tubes respectively, and the anode of diode is even
The source electrode of depletion type MOS tube is connect, the drain electrode of the cathode connection depletion type MOS tube of diode, diode is depletion type MOS tube itself
The drain electrode of the fly-wheel diode of internal self-assembling formation, two depletion type MOS tubes is respectively the input/output terminal of bidirectional current limiting circuit,
The setting value of the current-limiting resistance is the resistance of access of cutting off the power when tested field-effect tube leakage current is more than 1.2 times of rated value
Value.
The method further includes：It is described to be applied to the test voltage source output voltage of breakdown voltage characteristics rated value
Include in the drain D and source S of tested field-effect tube：The output voltage in adjustment test voltage source is from 0 volt with 100 volts of speed per second
Rate rises the drain D for being applied to tested field-effect tube and source S up to breakdown voltage characteristics rated value, or breakdown voltage is special
The output voltage in the test voltage source of property rated value is applied directly in the drain D and source S of tested field-effect tube.
Claims (10)
1. the drain leakage test circuit in a kind of field-effect tube breakdown voltage characteristics, including test voltage source and tested field effect
Ying Guan, test voltage source are used for the drain D to being tested field-effect tube and source S application voltage, which is characterized in that in test voltage
There are one current/voltage-converted amplification module, current/voltage-converted amplifications for setting between the anode and FET drain D in source
The voltage output signal of module is sent to the signal input part of an isolated amplifier module, the current/voltage-converted amplification
Module is to obtain sample resistance signal by operational amplifier to form current/voltage-converted, the isolation of the isolated amplifier module
Output end connects a microprocessor unit, and the microprocessor unit is according to isolated amplifier module rfpa output signal and electricity
Stream/voltage conversion amplification module gain amplifier relationship calculates the drain leakage that output measures.
2. leakage current test circuit according to claim 1, which is characterized in that one with floating reference ground potential every
It is carried to the operational amplifier of the current/voltage-converted amplification module and the isolation input end side of isolated amplifier module from power supply
For positive and negative power supply and floating reference ground potential, the isolated power supply include identical first DC power supply of two specifications and models and
The output cathode of second DC power supply, the output negative pole of the first DC power supply and the second DC power supply links together and test electricity
The anode connection of potential source forms the floating reference ground potential, the output cathode of the first DC power supply as operational amplifier with
The cathode power supply of the isolation input end side of isolated amplifier module inputs, and the output negative pole of the second DC power supply is as operation amplifier
The negative power supply of the isolation input end side of device and isolated amplifier module inputs.
3. leakage current test circuit according to claim 1 or 2, which is characterized in that the current/voltage-converted amplifies mould
The difference channel that the operational amplifier of block is made of the first operational amplifier and second operational amplifier, the sample resistance string
It is connected between the anode in test voltage source and FET drain D, the both ends of the sample resistance are separately connected the first operation and put
The negative input point of the electrode input end of big device and second operational amplifier, the first operational amplifier and second operational amplifier
Do not connect respective operational amplifier output terminal, the output end signal of first operational amplifier and second operational amplifier is logical
A programmable gain amplifier for crossing connection is sent to the input terminal of the isolated amplifier module.
4. leakage current test circuit according to claim 1 or 2, which is characterized in that the current/voltage-converted amplifies mould
The tandem amplifying circuit that the operational amplifier of block is made of third operational amplifier and four-operational amplifier, third operation are put
The anode of the electrode input end connecting test voltage source of big device, the negative input of third operational amplifier are connected by a resistance
Connect FET drain D, the electrode input end of the output end connection four-operational amplifier of third operational amplifier, the 4th operation
The negative input of amplifier connects ground reference, the cathode input of four-operational amplifier by the first ratio enlargement resistance
End connects the output end of four-operational amplifier by the second ratio enlargement resistance, and the sample resistance both ends are separately connected third
The output end of the negative input and third operational amplifier of operational amplifier, four-operational amplifier output end connection described in
The signal input part at the isolation input end of isolated amplifier module.
5. leakage current test circuit according to claim 1, which is characterized in that the tested field-effect tube have it is multiple, often
One field-effect tube is separately connected there are one current/voltage-converted amplification module and the isolated amplifier module, in electric current/electricity
Bidirectional current limiting circuit there are one being concatenated between pressure conversion amplification module and FET drain D, the bidirectional current limiting circuit is at least
Including two depletion type MOS tubes, a current-limiting resistance is connected between the source electrode of described two depletion type MOS tubes, one of those
The source electrode of depletion type MOS tube connects the grid of another depletion type MOS tube, and the drain electrode of two depletion type MOS tubes is respectively two-way
The input/output terminal of current-limiting circuit.
6. leakage current test circuit according to claim 5, which is characterized in that the setting value of the current-limiting resistance is to work as quilt
Survey the resistance value for access of cutting off the power when field-effect tube leakage current is more than 1.2 times of rated value.
7. the drain leakage test method in a kind of field-effect tube breakdown voltage characteristics is to be based on drain leakage test circuit
Test method, the test circuit includes test voltage source and tested field-effect tube, and test voltage source is used for tested field effect
Should pipe drain D and source S apply voltage, between the anode and FET drain D in test voltage source setting there are one electricity
Stream/voltage converts amplification module, and the voltage output signal of current/voltage-converted amplification module is sent to an isolated amplifier mould
The input terminal of block, the current/voltage-converted amplification module are made of operational amplifier and sample resistance, the isolated amplifier
The isolation output end of module connects a microprocessor unit, by the test voltage source output voltage of breakdown voltage characteristics rated value
It is applied in the drain D and source S of tested field-effect tube, which is characterized in that the method is：
The first step：Input sample resistance value, the yield value that final signal amplifies and the rated value for allowing leakage current；
Second step：The voltage value for obtaining isolated amplifier module isolation output end, passes through meter according to sample resistance value and yield value
Calculate the leakage current value that the voltage value measured is converted to drain D end；
Third walks：The drain D end leakage current value measured is compared with the leakage current rated value of input, when the leakage current of measurement
When value is more than leakage current rated value, judge that being tested field-effect tube cannot pass through, when the leakage current value of measurement is specified less than leakage current
When value, judge that being tested field-effect tube passes through.
8. the method according to the description of claim 7 is characterized in that an isolated power supply with floating reference ground potential is to institute
The isolation input end side of the operational amplifier and isolated amplifier module of stating current/voltage-converted amplification module provides positive-negative power
With floating reference ground potential, the isolated power supply includes identical first DC power supply of two specifications and models and the second direct current
The anode that the output cathode of source, the output negative pole of the first DC power supply and the second DC power supply links together with test voltage source
Connection forms the floating reference ground potential, and the output cathode of the first DC power supply is as operational amplifier and isolated amplifier
The cathode power supply of the isolation input end side of module inputs, and the output negative pole of the second DC power supply is put as operational amplifier and isolation
The negative power supply input of the isolation input end side of big device module.
9. the method according to the description of claim 7 is characterized in that the tested field-effect tube has multiple, each field-effect
Pipe is separately connected there are one current/voltage-converted amplification module and the isolated amplifier module, is amplified in current/voltage-converted
It is concatenated between module and FET drain D there are one bidirectional current limiting circuit, the bidirectional current limiting circuit includes at least two consumptions
Type metal-oxide-semiconductor to the greatest extent connects a current-limiting resistance, one of depletion type MOS tube between the source electrode of described two depletion type MOS tubes
Source electrode connect the grid of another depletion type MOS tube, the drain electrode of two depletion type MOS tubes is respectively the defeated of bidirectional current limiting circuit
Enter output end, the setting value of the current-limiting resistance is cut off the power when tested field-effect tube leakage current is more than 1.2 times of rated value
The resistance value of access.
10. according to the method described in claim 7 or 8 or 9, which is characterized in that the survey by breakdown voltage characteristics rated value
Examination voltage source output voltage, which is applied in the drain D and source S of tested field-effect tube, includes：Adjust the output electricity in test voltage source
It presses and rises the drain D for being applied to tested field-effect tube and source S with 100 volts of rate per second from 0 volt up to breakdown voltage characteristics
Rated value, or the output voltage in the test voltage source of breakdown voltage characteristics rated value is applied directly to tested field-effect tube
In drain D and source S.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810476793.2A CN108761284A (en) | 2018-05-18 | 2018-05-18 | Drain leakage test circuit in field-effect tube breakdown voltage characteristics and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810476793.2A CN108761284A (en) | 2018-05-18 | 2018-05-18 | Drain leakage test circuit in field-effect tube breakdown voltage characteristics and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108761284A true CN108761284A (en) | 2018-11-06 |
Family
ID=64008530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810476793.2A Pending CN108761284A (en) | 2018-05-18 | 2018-05-18 | Drain leakage test circuit in field-effect tube breakdown voltage characteristics and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108761284A (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109709465A (en) * | 2019-01-02 | 2019-05-03 | 电子科技大学 | A kind of MOSFET leakage current extraction circuit |
| CN110879343A (en) * | 2019-10-28 | 2020-03-13 | 深圳市晶导电子有限公司 | Method and system for testing high-temperature drain-source leakage current characteristics of device |
| CN111474399A (en) * | 2020-05-19 | 2020-07-31 | 深圳淇诺科技有限公司 | High-voltage side large-current precise sampling conversion circuit |
| CN111551864A (en) * | 2020-06-22 | 2020-08-18 | 微思机器人(深圳)有限公司 | High-precision bidirectional current detection circuit applied to battery charging and discharging and method thereof |
| CN112394228A (en) * | 2020-11-17 | 2021-02-23 | 青岛聚能创芯微电子有限公司 | Gallium nitride power device on-resistance test circuit |
| CN112485507A (en) * | 2020-11-18 | 2021-03-12 | 北京时代民芯科技有限公司 | Method for testing transmission current of daisy chain communication circuit |
| WO2021058890A1 (en) | 2019-09-26 | 2021-04-01 | Psa Automobiles Sa | Test module for leakage currents in an inhibition circuit, embedded system comprising same, and motor vehicle incorporating same |
| CN113253088A (en) * | 2021-06-25 | 2021-08-13 | 上海瞻芯电子科技有限公司 | Transistor gate oxide testing device and system |
| CN113296025A (en) * | 2021-07-26 | 2021-08-24 | 佛山市联动科技股份有限公司 | Precise high-voltage micro leakage current measuring module for ATE (automatic test equipment) test |
| CN113740691A (en) * | 2021-07-27 | 2021-12-03 | 杭州士兰集成电路有限公司 | Method for testing field effect transistor |
| CN115902567A (en) * | 2023-02-15 | 2023-04-04 | 苏州联讯仪器股份有限公司 | High-voltage transistor test circuit and system |
| CN116298766A (en) * | 2023-05-16 | 2023-06-23 | 成都思科瑞微电子股份有限公司 | Test method of insulated gate field effect transistor |
| CN117110403A (en) * | 2023-08-03 | 2023-11-24 | 天津大学 | Gas-sensitive field effect transistor drain gate voltage excitation and source-drain current acquisition system and method |
| CN117169675A (en) * | 2023-09-01 | 2023-12-05 | 南京航空航天大学 | On-line monitoring circuit for conduction voltage drop of inverter-stage wide-temperature-zone power device |
| CN117330951A (en) * | 2023-11-16 | 2024-01-02 | 华羿微电子股份有限公司 | SOA (service oriented architecture) test system and test method for MOS (metal oxide semiconductor) switch device |
| CN117169675B (en) * | 2023-09-01 | 2024-04-26 | 南京航空航天大学 | On-line monitoring circuit for conduction voltage drop of inverter-stage wide-temperature-zone power device |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5742463A (en) * | 1993-07-01 | 1998-04-21 | The University Of Queensland | Protection device using field effect transistors |
| JP2004063606A (en) * | 2002-07-26 | 2004-02-26 | Matsushita Electric Works Ltd | Overcurrent protection device |
| CN1643759A (en) * | 2002-02-12 | 2005-07-20 | 福尔泰克股份有限公司 | A protection device |
| CN101510761A (en) * | 2008-02-12 | 2009-08-19 | 恩益禧电子股份有限公司 | Operational amplifier circuit and display apparatus using the same |
| WO2009102398A1 (en) * | 2008-02-11 | 2009-08-20 | Boums. Inc. | Transient blocking unit using normally-off device to detect current trip threshold |
| CN101702508A (en) * | 2009-11-19 | 2010-05-05 | 上海长园维安微电子有限公司 | Two-way blocking-up type surge protection device |
| KR20100078608A (en) * | 2008-12-30 | 2010-07-08 | 주식회사 동부하이텍 | Apparatus and method for testing mos transistors |
| CN205210170U (en) * | 2015-10-14 | 2016-05-04 | 嘉兴金尚节能科技有限公司 | Supply hourglass current detection circuit of ADC sampling |
| CN105548654A (en) * | 2015-12-02 | 2016-05-04 | 中国电子科技集团公司第四十一研究所 | Circuit and method for weak current detection |
| CN106443128A (en) * | 2016-09-23 | 2017-02-22 | 中国电子科技集团公司第四十研究所 | FA-level weak current signal measurement circuit |
| CN106601818A (en) * | 2016-12-15 | 2017-04-26 | 深圳市锐骏半导体股份有限公司 | Current-detection-function provided field-effect transistor, current detection circuit and detection method |
| CN107168437A (en) * | 2017-07-04 | 2017-09-15 | 中国科学技术大学 | A kind of bipolar current source |
| CN206848417U (en) * | 2017-06-08 | 2018-01-05 | 北京华峰测控技术有限公司 | A kind of high-voltage MOSFET water breakdown voltage multistation parallel measurement device |
| CN208334553U (en) * | 2018-05-18 | 2019-01-04 | 北京华峰测控技术股份有限公司 | A kind of drain leakage current test circuit in field-effect tube breakdown voltage characteristics |
-
2018
- 2018-05-18 CN CN201810476793.2A patent/CN108761284A/en active Pending
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5742463A (en) * | 1993-07-01 | 1998-04-21 | The University Of Queensland | Protection device using field effect transistors |
| CN1643759A (en) * | 2002-02-12 | 2005-07-20 | 福尔泰克股份有限公司 | A protection device |
| JP2004063606A (en) * | 2002-07-26 | 2004-02-26 | Matsushita Electric Works Ltd | Overcurrent protection device |
| WO2009102398A1 (en) * | 2008-02-11 | 2009-08-20 | Boums. Inc. | Transient blocking unit using normally-off device to detect current trip threshold |
| CN101510761A (en) * | 2008-02-12 | 2009-08-19 | 恩益禧电子股份有限公司 | Operational amplifier circuit and display apparatus using the same |
| KR20100078608A (en) * | 2008-12-30 | 2010-07-08 | 주식회사 동부하이텍 | Apparatus and method for testing mos transistors |
| CN101702508A (en) * | 2009-11-19 | 2010-05-05 | 上海长园维安微电子有限公司 | Two-way blocking-up type surge protection device |
| CN205210170U (en) * | 2015-10-14 | 2016-05-04 | 嘉兴金尚节能科技有限公司 | Supply hourglass current detection circuit of ADC sampling |
| CN105548654A (en) * | 2015-12-02 | 2016-05-04 | 中国电子科技集团公司第四十一研究所 | Circuit and method for weak current detection |
| CN106443128A (en) * | 2016-09-23 | 2017-02-22 | 中国电子科技集团公司第四十研究所 | FA-level weak current signal measurement circuit |
| CN106601818A (en) * | 2016-12-15 | 2017-04-26 | 深圳市锐骏半导体股份有限公司 | Current-detection-function provided field-effect transistor, current detection circuit and detection method |
| CN206848417U (en) * | 2017-06-08 | 2018-01-05 | 北京华峰测控技术有限公司 | A kind of high-voltage MOSFET water breakdown voltage multistation parallel measurement device |
| CN107168437A (en) * | 2017-07-04 | 2017-09-15 | 中国科学技术大学 | A kind of bipolar current source |
| CN208334553U (en) * | 2018-05-18 | 2019-01-04 | 北京华峰测控技术股份有限公司 | A kind of drain leakage current test circuit in field-effect tube breakdown voltage characteristics |
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109709465A (en) * | 2019-01-02 | 2019-05-03 | 电子科技大学 | A kind of MOSFET leakage current extraction circuit |
| CN109709465B (en) * | 2019-01-02 | 2020-10-27 | 电子科技大学 | MOSFET leakage current extraction circuit |
| WO2021058890A1 (en) | 2019-09-26 | 2021-04-01 | Psa Automobiles Sa | Test module for leakage currents in an inhibition circuit, embedded system comprising same, and motor vehicle incorporating same |
| FR3101424A1 (en) | 2019-09-26 | 2021-04-02 | Psa Automobiles Sa | Leakage current test module in an inhibition circuit, on-board system including them, and motor vehicle incorporating them |
| CN110879343A (en) * | 2019-10-28 | 2020-03-13 | 深圳市晶导电子有限公司 | Method and system for testing high-temperature drain-source leakage current characteristics of device |
| CN110879343B (en) * | 2019-10-28 | 2021-09-24 | 深圳市晶导电子有限公司 | Method and system for testing high-temperature drain-source leakage current characteristics of device |
| CN111474399A (en) * | 2020-05-19 | 2020-07-31 | 深圳淇诺科技有限公司 | High-voltage side large-current precise sampling conversion circuit |
| CN111474399B (en) * | 2020-05-19 | 2022-07-08 | 深圳淇诺科技有限公司 | High-voltage side large-current precise sampling conversion circuit |
| CN111551864A (en) * | 2020-06-22 | 2020-08-18 | 微思机器人(深圳)有限公司 | High-precision bidirectional current detection circuit applied to battery charging and discharging and method thereof |
| CN111551864B (en) * | 2020-06-22 | 2022-07-15 | 微思机器人(深圳)有限公司 | High-precision bidirectional current detection circuit applied to battery charging and discharging and method thereof |
| CN112394228A (en) * | 2020-11-17 | 2021-02-23 | 青岛聚能创芯微电子有限公司 | Gallium nitride power device on-resistance test circuit |
| CN112485507A (en) * | 2020-11-18 | 2021-03-12 | 北京时代民芯科技有限公司 | Method for testing transmission current of daisy chain communication circuit |
| CN113253088B (en) * | 2021-06-25 | 2021-09-28 | 上海瞻芯电子科技有限公司 | Transistor gate oxide testing device and system |
| CN113253088A (en) * | 2021-06-25 | 2021-08-13 | 上海瞻芯电子科技有限公司 | Transistor gate oxide testing device and system |
| CN113296025A (en) * | 2021-07-26 | 2021-08-24 | 佛山市联动科技股份有限公司 | Precise high-voltage micro leakage current measuring module for ATE (automatic test equipment) test |
| CN113740691A (en) * | 2021-07-27 | 2021-12-03 | 杭州士兰集成电路有限公司 | Method for testing field effect transistor |
| CN115902567A (en) * | 2023-02-15 | 2023-04-04 | 苏州联讯仪器股份有限公司 | High-voltage transistor test circuit and system |
| CN116298766A (en) * | 2023-05-16 | 2023-06-23 | 成都思科瑞微电子股份有限公司 | Test method of insulated gate field effect transistor |
| CN117110403A (en) * | 2023-08-03 | 2023-11-24 | 天津大学 | Gas-sensitive field effect transistor drain gate voltage excitation and source-drain current acquisition system and method |
| CN117110403B (en) * | 2023-08-03 | 2024-01-30 | 天津大学 | Gas-sensitive field effect transistor drain gate voltage excitation and source-drain current acquisition system and method |
| CN117169675A (en) * | 2023-09-01 | 2023-12-05 | 南京航空航天大学 | On-line monitoring circuit for conduction voltage drop of inverter-stage wide-temperature-zone power device |
| CN117169675B (en) * | 2023-09-01 | 2024-04-26 | 南京航空航天大学 | On-line monitoring circuit for conduction voltage drop of inverter-stage wide-temperature-zone power device |
| CN117330951A (en) * | 2023-11-16 | 2024-01-02 | 华羿微电子股份有限公司 | SOA (service oriented architecture) test system and test method for MOS (metal oxide semiconductor) switch device |
| CN117330951B (en) * | 2023-11-16 | 2024-03-22 | 华羿微电子股份有限公司 | SOA (service oriented architecture) test system and test method for MOS (metal oxide semiconductor) switch device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108761284A (en) | Drain leakage test circuit in field-effect tube breakdown voltage characteristics and method | |
| CN208334553U (en) | A kind of drain leakage current test circuit in field-effect tube breakdown voltage characteristics | |
| CN111337808B (en) | On-line measuring circuit and system for conduction voltage drop of power semiconductor device | |
| Gelagaev et al. | A fast voltage clamp circuit for the accurate measurement of the dynamic on-resistance of power transistors | |
| CN201159747Y (en) | Inductor current sensing circuit for switch power source | |
| CN101135716B (en) | Method and apparatus for measuring leakage current | |
| CN101769964A (en) | Method, device and system for testing conducting resistance of packaged field-effect tube | |
| CN104156025B (en) | A kind of high-order temperature compensated reference source | |
| CN104156026B (en) | Non-bandgap reference source is repaid in the full temperature compensation of a kind of non-resistance | |
| CN111289799B (en) | GaN device dynamic on-resistance measuring circuit | |
| CN104020339B (en) | A kind of programmable current testing circuit | |
| CN110346703B (en) | Method for eliminating parasitic capacitance influence in ultra-fast semiconductor component test | |
| CN205489504U (en) | A anti high tension protection circuit for low pressure voltage measurement circuit | |
| CN201611352U (en) | Test circuit for MOSFET | |
| CN103487658A (en) | Detection circuit for detecting on resistance of high-end-voltage bootstrap N-type switch | |
| CN112630544A (en) | High-voltage SiC MOSFET drain-source interelectrode nonlinear capacitance measurement and modeling method | |
| CN209731191U (en) | A kind of High accuracy voltage follower of wide input voltage | |
| CN202119878U (en) | High voltage test power supply special circuit for simulating integrated circuit test system | |
| CN208766231U (en) | A kind of dynamic electric resistor measuring circuit | |
| CN207380122U (en) | MOSFET hourglass source electrode resistance test circuits | |
| Cao et al. | A new measurement circuit to evaluate current collapse effect of GaN HEMTs under practical conditions | |
| CN101820255B (en) | Voltage follower for high voltage input | |
| CN203574631U (en) | Level shift circuit | |
| Ren et al. | A voltage clamp circuit for the real-time measurement of the on-state voltage of power transistors | |
| CN103970170B (en) | A kind of constant current loop |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |