CN210690740U - IGBT (insulated Gate Bipolar transistor) forward recovery characteristic equivalent test circuit - Google Patents
IGBT (insulated Gate Bipolar transistor) forward recovery characteristic equivalent test circuit Download PDFInfo
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Abstract
The utility model discloses a IGBT forward recovery characteristic equivalent test circuit, include: the device comprises a current and voltage testing device, a testing load and a signal generator, wherein the testing load and the signal generator are connected in parallel and are connected with the IGBT module to be tested in parallel; the signal generator is used for sending an interference signal, the test load is used for adjusting the interference signal to obtain a working condition signal, and the current and voltage measuring device is used for measuring the forward recovery current and the forward recovery voltage of the IGBT module to be tested after receiving the working condition signal. Through implementing the utility model discloses, apply high amplitude disturbance to the IGBT for the IGBT produces forward recovery effect under interference signal's effect, consequently, the embodiment of the utility model provides an IGBT forward recovery characteristic equivalent test circuit can test the forward recovery characteristic of IGBT through simple circuit, has saved process and the equipment of additionally buildding the high-pressure test platform, has improved the efficiency of IGBT forward recovery characteristic test.
Description
Technical Field
The utility model relates to an electron power technology field, concretely relates to IGBT forward recovery characteristic equivalent test circuit.
Background
With the development of technology, power electronic technology is playing an important role in more and more fields, including electric vehicles, aerospace, new energy power generation, and the like. The IGBT is very important as a core device for energy conversion and transmission in power electronic devices, so it is necessary to know the switching characteristics and loss conditions of the IGBT in engineering applications.
In general, parameters of a specific type of IGBT are mainly obtained according to a data manual of the type of IGBT, however, only some parameters of the IGBT are included in the data manual, and some important indexes such as turn-on loss, forward recovery characteristics and the like are not described in the data manual. Therefore, experiments are required to obtain important indicators of IGBTs.
At present, a test for the IGBT is mainly a double pulse test, and the test can evaluate whether the values of the on-resistance and the off-resistance of the IGBT are reasonable, and evaluate indexes such as reverse recovery current and voltage spike when the IGBT is turned off. But the test needs to additionally build a double-pulse experimental platform. In addition, in the prior art, a test platform needs to be built for testing the forward recovery characteristics of the IGBT, and a test circuit is complex.
SUMMERY OF THE UTILITY MODEL
In view of this, the embodiment of the utility model provides a IGBT forward recovery characteristic equivalent test circuit to solve among the prior art to the test of IGBT forward recovery characteristic need build test platform, and the comparatively complicated technical problem of test circuit.
The embodiment of the utility model provides a technical scheme as follows:
the embodiment of the utility model provides a IGBT forward recovery characteristic equivalence test circuit, this equivalence test circuit includes: the device comprises a current and voltage testing device, a testing load and a signal generator, wherein the testing load and the signal generator are connected in parallel and are connected with an IGBT module to be tested in parallel; the signal generator is used for sending an interference signal, the test load is used for adjusting the interference signal to obtain a working condition signal, and the current and voltage measuring device is used for measuring the forward recovery current and the forward recovery voltage of the IGBT module to be tested after receiving the working condition signal.
Optionally, the IGBT forward recovery characteristic equivalent test circuit further includes: and the first switch is connected in parallel at two ends of the IGBT module to be tested.
Optionally, the test load is an LC circuit, the LC circuit comprising: the inductor comprises a first inductor and a first capacitor, wherein the first inductor and the first capacitor are connected in parallel.
Optionally, the signal generator is a ringing wave generator.
Optionally, the signal generator comprises: the input loop and the output loop, the input loop is connected with the output loop through a second switch.
Optionally, the input circuit comprises: the circuit comprises a power supply, a first resistor and a second capacitor, wherein the power supply, the first resistor and the second capacitor are connected in series.
Optionally, the output loop comprises: the second inductor, the second resistor and the third capacitor are connected in series, and two ends of the output loop are connected with the test load.
Optionally, the signal generator further comprises: and one end of the resistance selection module is connected with one end of the second resistor and one end of the third capacitor, and the other end of the resistance selection module is connected with one end of the output loop.
Optionally, the resistance selection module includes: the circuit comprises a third resistor, a fourth resistor and a third switch, wherein the third resistor, the fourth resistor and the third switch are connected in series.
The embodiment of the utility model provides a technical scheme has following advantage:
the embodiment of the utility model provides a IGBT forward recovery characteristic equivalent test circuit can pass through signal generator and apply high amplitude disturbance to the IGBT, and the real operating mode of IGBT can be simulated to the test load for the IGBT produces forward recovery effect under interference signal's effect, and voltage and electric current when current and voltage testing arrangement can be used for testing the IGBT and take place forward recovery, thereby obtains the forward recovery characteristic of IGBT. The embodiment of the utility model provides a IGBT forward recovery characteristic equivalent test circuit can test IGBT's forward recovery characteristic through simple circuit, has saved process and the equipment of additionally buildding high-voltage test platform, has improved IGBT forward recovery characteristic test's efficiency.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the technical solutions in the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a block diagram of an equivalent test circuit for the forward recovery characteristic of the IGBT according to the embodiment of the present invention;
fig. 2 is a schematic circuit diagram of an equivalent test circuit for the forward recovery characteristic of the IGBT according to the embodiment of the present invention;
fig. 3 is a schematic circuit diagram of an equivalent test circuit for the forward recovery characteristic of the IGBT according to another embodiment of the present invention.
Detailed Description
The technical solution of the present invention will be described clearly and completely with reference to the accompanying drawings, and obviously, the described embodiments are some, but not all embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Furthermore, the technical features mentioned in the different embodiments of the invention described below can be combined with each other as long as they do not conflict with each other.
An embodiment of the utility model provides a IGBT forward recovery characteristic equivalent test circuit, as shown in fig. 1, this test circuit includes: the device comprises a current and voltage testing device 1, a testing load 3 and a signal generator 4, wherein the testing load 3 and the signal generator 4 are connected in parallel and are connected with an IGBT module 2 to be tested in parallel, and the current and voltage testing device 1 is connected with the IGBT module 2 to be tested; the signal generator 4 is used for sending an interference signal, the test load 3 is used for adjusting the interference signal to obtain a working condition signal, and the current and voltage measuring device 1 is used for measuring the forward recovery current and the forward recovery voltage of the IGBT module 2 to be tested after receiving the working condition signal.
The embodiment of the utility model provides a IGBT forward recovery characteristic equivalent test circuit can pass through signal generator and apply high amplitude disturbance to the IGBT, and the real operating mode of IGBT can be simulated to the test load for the IGBT produces forward recovery effect under interference signal's effect, and voltage and electric current when current and voltage testing arrangement can be used for testing the IGBT and take place forward recovery, thereby obtains the forward recovery characteristic of IGBT. The embodiment of the utility model provides a IGBT forward recovery characteristic equivalent test circuit can test IGBT's forward recovery characteristic through simple circuit, has saved process and the equipment of additionally buildding high-voltage test platform, has improved IGBT forward recovery characteristic test's efficiency.
As an optional implementation manner of the embodiment of the present invention, as shown in fig. 2, the IGBT forward recovery characteristic equivalent test circuit further includes: the first switch K1 and the first switch K1 are connected in parallel at two ends of the IGBT module 2 to be tested. The IGBT module 2 that awaits measuring can be for the module of concrete application, for example can be half bridge structure, also can be other structures, the utility model discloses do not limit to this. In the specific testing process of the IGBT, the first switch K1 can be switched off, a square wave signal is sent to the grid electrode of the IGBT by adopting an external IGBT driving board, the real running condition of the IGBT is simulated, and the IGBT is switched on intermittently. Meanwhile, the signal generator 4 sends out an interference signal which can be applied to the on state or the off state of the IGBT, if the interference signal is applied to the off time, the next time of the interference signal retest is waited, and the forward recovery condition of the IGBT can be simulated until the interference signal is applied to the on time of the IGBT.
Specifically, the mechanism of the IGBT forward recovery is that at the zero crossing of the IGBT current, an anti-parallel diode commutation behavior occurs. In this process, the MOS channel of the IGBT is established, but the drift zone is not yet filled with charge carriers, and the IGBT has a relatively large internal equivalent resistance. The Vce voltage is reflected as a peak in the forward recovery process, but when the current is increased, the internal resistance of the IGBT is rapidly reduced, and the Vce voltage is recovered to normal. Therefore, the signal generator sends a high-amplitude disturbance signal, the IGBT forward recovery process can be simulated, and a forward recovery equivalent test is carried out. In this process, the current-voltage testing device 1 can be used to measure the Vce voltage of the IGBT and the current flowing through the IGBT, thereby obtaining the forward recovery characteristic of the IGBT.
Wherein, as shown in fig. 2, the current and voltage testing device 1 can comprise an ammeter and a voltmeter, the ammeter can be connected in series with the IGBT module 2 to be tested to measure the forward recovery current flowing through the IGBT module, and the voltmeter can be connected in parallel at the two ends of the IGBT module 2 to be tested to measure the forward recovery voltage of the IGBT module to be tested. In addition, the current-voltage testing device 1 may be other devices capable of measuring current and voltage, and the present invention is not limited thereto.
As an optional implementation manner of the embodiment of the present invention, as shown in fig. 2, the test load 3 in the IGBT forward recovery characteristic equivalent test circuit may be an LC circuit, wherein the LC circuit may include: the first inductor L1 and the first capacitor C1, and the first inductor L1 and the first capacitor C1 are connected in parallel. In a specific test process, parameters such as the capacitance to ground and the stray inductance of the IGBT module 2 to be tested in a real operation environment can be simulated by reasonably selecting the parameters of the first inductor L1 and the first capacitor C1 in the LC circuit. Specifically, the values of the first inductor L1 and the first capacitor C1 are different according to the length and the model of the cable to be simulated. For example, the first capacitor C1 may be selected to be 100 pF/m, or 5nF if a 50 m cable condition is simulated. The value may be specific to the cable model.
As an optional implementation manner of the embodiment of the present invention, the signal generator 4 may select a ringing wave generator. In a specific test process, the interference signal sent by the signal generator 4 can be the maximum value which can be output by the signal generator, under the interference signal, the forward recovery effect of the IGBT module to be tested can be better realized, and the measured forward recovery current and forward recovery voltage are more accurate.
As an alternative implementation manner of the embodiment of the present invention, as shown in fig. 3, the signal generator 4 may include: an input circuit 41 and an output circuit 42, wherein the input circuit 41 is connected to the output circuit 42 through a second switch K2. Wherein, input circuit 41 includes: the power supply U, the first resistor R1 and the second capacitor C2 are connected in series, and the power supply U, the first resistor R1 and the second capacitor C2 are connected in series. The output circuit 42 includes: the second inductor L2, the second resistor R2, and the third capacitor C3 are connected in series, the second inductor L2, the second resistor R2, and the third capacitor C3 are connected in series, and both ends of the output circuit 42 are connected to the test load 3.
As an optional implementation manner of the embodiment of the present invention, the signal generator 4 may further include: and one end of the resistance selection module 43 is connected to one end of the second resistor R2 and one end of the third capacitor C3, and the other end of the resistance selection module 43 is connected to one end of the output loop 42. Specifically, the resistance selection module 43 may include: the third resistor R3, the fourth resistor R4 and the third switch K3, and the third resistor R3, the fourth resistor R4 and the third switch K3 are connected in series. In a specific test process, different resistance values can be selected for the third resistor R3 and the fourth resistor R4, the third switch K3 can select a bidirectional switch, and the third resistor K3 or the fourth resistor R4 can be connected to the third resistor R3 or the fourth resistor R4 to respectively simulate a long branch or an end branch, that is, when a resistor with a larger resistance value is connected into a circuit, the long branch can be modeled, and when a resistor with a smaller resistance value is connected into the circuit, the short branch can be modeled. Therefore, the resistance selection module 43 can simulate the real application condition of the IGBT module 2 to be tested, and the testing accuracy of the IGBT forward recovery characteristic is improved.
Although the present invention has been described in detail with respect to the exemplary embodiments and the advantages thereof, those skilled in the art will appreciate that various changes, substitutions and alterations can be made to the embodiments without departing from the spirit of the invention and the scope of the invention as defined by the appended claims. For other examples, one of ordinary skill in the art will readily appreciate that the order of the process steps may be varied while maintaining the scope of the present invention.
Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present invention, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present invention. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.
Claims (9)
1. An IGBT forward recovery characteristic equivalent test circuit is characterized by comprising: the device comprises a current and voltage testing device, a testing load and a signal generator, wherein the testing load and the signal generator are connected in parallel and are connected with an IGBT module to be tested in parallel;
the signal generator is used for sending an interference signal, the test load is used for adjusting the interference signal to obtain a working condition signal, and the current and voltage measuring device is used for measuring the forward recovery current and the forward recovery voltage of the IGBT module to be tested after receiving the working condition signal.
2. The IGBT forward recovery characteristic equivalent test circuit according to claim 1, further comprising: and the first switch is connected in parallel at two ends of the IGBT module to be tested.
3. The IGBT forward recovery characteristic equivalent test circuit according to claim 1, wherein the test load is an LC circuit, the LC circuit including: the inductor comprises a first inductor and a first capacitor, wherein the first inductor and the first capacitor are connected in parallel.
4. The IGBT forward recovery characteristic equivalent test circuit according to claim 1, wherein the signal generator is a ringing wave generator.
5. The IGBT forward recovery characteristic equivalent test circuit according to claim 4, wherein the signal generator comprises: the input loop and the output loop, the input loop is connected with the output loop through a second switch.
6. The IGBT forward recovery characteristic equivalent test circuit according to claim 5, wherein the input loop comprises: the circuit comprises a power supply, a first resistor and a second capacitor, wherein the power supply, the first resistor and the second capacitor are connected in series.
7. The IGBT forward recovery characteristic equivalent test circuit according to claim 5, wherein the output loop comprises: the second inductor, the second resistor and the third capacitor are connected in series, and two ends of the output loop are connected with the test load.
8. The IGBT forward recovery characteristic equivalent test circuit according to claim 7, wherein the signal generator further comprises: and one end of the resistance selection module is connected with one end of the second resistor and one end of the third capacitor, and the other end of the resistance selection module is connected with one end of the output loop.
9. The IGBT forward recovery characteristic equivalent test circuit according to claim 8, wherein the resistance selection module includes: the circuit comprises a third resistor, a fourth resistor and a third switch, wherein the third resistor, the fourth resistor and the third switch are connected in series.
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| CN201921419423.1U CN210690740U (en) | 2019-08-28 | 2019-08-28 | IGBT (insulated Gate Bipolar transistor) forward recovery characteristic equivalent test circuit |
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| CN110554296A (en) * | 2019-08-28 | 2019-12-10 | 全球能源互联网研究院有限公司 | IGBT (insulated Gate Bipolar transistor) forward recovery characteristic equivalent test circuit |
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| CN110554296A (en) * | 2019-08-28 | 2019-12-10 | 全球能源互联网研究院有限公司 | IGBT (insulated Gate Bipolar transistor) forward recovery characteristic equivalent test circuit |
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