CN202178059U - High-capacity USB flash disk replacing hard disc - Google Patents
High-capacity USB flash disk replacing hard disc Download PDFInfo
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- CN202178059U CN202178059U CN2011203416487U CN201120341648U CN202178059U CN 202178059 U CN202178059 U CN 202178059U CN 2011203416487 U CN2011203416487 U CN 2011203416487U CN 201120341648 U CN201120341648 U CN 201120341648U CN 202178059 U CN202178059 U CN 202178059U
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- page register
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- type flash
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Abstract
A high-capacity USB flash disk replacing a hard disk adopts the structure that main external data cables (1) are connected with the input terminals of page registers (5), auxiliary external data cables (2) are connected with the input terminals of encoders (3), the output terminals of the encoders (3) are connected with the input terminals of drive circuits (13), and output terminals (4) of the drive circuits (13) are connected with the enabling terminals of all the page registers. Or, the high-capacity USB flash disk adopts the structure that external data cables (1) are connected with the input terminals of page registers (2), main output terminals (8) of the page registers (2) are connected with NAND flash memory data cables, auxiliary output terminals (3) of the page registers (2) are connected with the input terminals of encoders (4), the output terminals of the encoders (4) are connected with the input terminals of drive circuits (11), and output terminals (5) of the drive circuits (11) are connected with all NAND flash memory enabling terminals respectively.
Description
Affiliated technical field
The utility model relates to a kind of storer of substituting for computer hard disc, especially the high capacity U disc of substituting for computer hard disc.
Background technology
At present, the basic memory device of known computing machine is a hard disk, and hard disc is rotated by motor drives, turn up several thousand~10,000 commentaries on classics/min; Read head on the hard disc is also by Motor Control, and radial motion on disc is read or deposited magnetic information in to disc.Computing machine is worked at the beginning, and hard film is rotation just, promptly sends certain noise sound, consume electric power again, and especially when many computing machines were worked in a room simultaneously, hard disk noise sound and power consumption were more serious; Stronger external vibration can make read head collision hard film, causes the disc permanent damage; The disc magnetic track is easier to the part damage or lost efficacy; Stronger external magnetic field might change the magnetic information on the disc; No matter disc motor or read head motor damage, and all can cause hard disk to lose efficacy.
The utility model content
The existing power consumption of active computer hard disk is high in order to overcome, noise sound greatly, easily by deficiencies such as vibrations and external magnetic field damages, the utility model proposes to synthesize high capacity U disc substituting for computer hard disc with a plurality of NAND type flash memory set.
The utility model solves the technical scheme that its technical matters adopted
USB flash disk mainly is made up of NAND type flash memory, page register and read-write controller etc.The read step of NAND type flash memory is: transmission order and addressing information → the data biography is spread out of to page register → data; The step of writing of NAND type flash memory is: the transmission addressing information → data biography is write the page to page register → transmission command information → data from register.
The present max cap. of NAND type flash memory is about 10G-bit; And general microcomputer computer or notebook computer requirement memory span are tens~hundreds of G-bit; For the expansion capacity, a plurality of NAND type flash memories, page register and read-write controller are combined into high capacity U disc with one of following dual mode.
Mode one page register enables control type: a page register output terminal is connected with data line with a NAND type flash memory address; Be connected a read-write controller between page register and the NAND type flash memory; All page register input end, ground wire and power lead parallel connections respectively, all ground wire of NAND type flash memory and power lead parallel connections respectively; Between a plurality of page registers and external data line, increase code translator, code translator input termination external data line, each bar output line of code translator is connected with a driving circuit input end, and a driving circuit output terminal is connected with a page register Enable Pin; External data line quantity is divided into the additional two parts of fundamental sum more than page register input end quantity with the external data line, and basic external data line quantity is identical with page register input end quantity; Basic external data line is connected with the page register input end, and the additional external data line is connected with the code translator input end; Comprise the page register addressing in the external data line addressing instruction; External data line page register addressing instruction only makes a page register job through code translator and driving circuit, and the read write command of external data line is operated a NAND type flash reading and writing with its read-write controller of controlling through enabling effective page register; If each page register has the independent enable end, with mains terminals, the ground terminal parallel connection respectively of a plurality of page registers; If the Enable Pin of each page register is a mains terminals; Article one, decoding-driving circuit output line is connected with the mains terminals of a page register; The page register addressing instruction that the external data line sends only makes a driving circuit be output as high level; All the other all are low level, with whole page register ground terminal parallel connections; If the Enable Pin of each page register is a ground terminal; Article one, decoding-driving circuit output line is connected with a page register ground terminal; The page register addressing instruction that the external data line sends only makes a driving circuit be output as low level; All the other all are high level, with the mains terminals parallel connection of whole page registers.
Be no less than page register quantity as if additional external data line quantity in the mode one; Can the additional external data line directly be connected with the driving circuit input end; Article one, the additional external data line directly is connected with a driving circuit input end, and driving circuit output terminal and a page register Enable Pin or mains terminals or ground terminal are connected.
Mode two NAND type flash memories enable control type: identical numbered address and data line, ground wire, the power lead of a plurality of NAND type flash memories are distinguished parallel connection; Page register input termination external data line, page register output terminal quantity is more than NAND type flash memory address and data line quantity; The page register output terminal is divided into the additional two parts of fundamental sum, and the basic output terminal quantity of page register is identical with NAND type flash data input end quantity; The basic output terminal of page register is connected with NAND type flash data input end; The additional output of page register termination code translator input end; Each output terminal of code translator is connected with a NAND type flash memory Enable Pin through a driving circuit, is connected a public read-write controller between page register and each NAND type flash memory; Comprise the addressing of NAND type flash memory in the external data line addressing instruction; External data line NAND type flash memory addressing instruction only makes a NAND type flash memory enable effectively through page register, code translator and driving circuit, and external data line read write command is operated enabling valid NAND type flash reading and writing through page register and public read-write controller; If each NAND type flash memory has the independent enable end, with power lead, the ground wire parallel connection respectively of a plurality of NAND type flash memories; If the Enable Pin of each NAND type flash memory is a mains terminals; Article one, decoding-driving circuit output line is connected with a NAND type flash memory mains terminals; The NAND type flash memory addressing instruction that the external data line sends only makes a driving circuit be output as high level; All the other all are low level, with whole NAND type flash memory ground terminal parallel connections; If each NAND type flash memory Enable Pin is a ground terminal; Article one, decoding-driving circuit output line is connected with a NAND type flash memory ground terminal; The external data line sends NAND type flash memory addressing instruction and only makes a driving circuit output low level; All the other all are high level or open circuit, with the mains terminals parallel connection of whole NAND type flash memories.
If adding output terminal quantity, page register is no less than NAND type flash memory quantity in the mode two; Can the additional output terminal of page register directly be connected with the driving circuit input end; The additional output terminal of page register directly is connected with a driving circuit input end, and driving circuit output terminal and a NAND type flash memory Enable Pin or mains terminals or ground terminal are connected.
The beneficial effect of the utility model
Can be by the synthetic high capacity U disc of a plurality of NAND type flash memory set as the basic storer of computing machine, the high capacity U disc cost is low, operating speed is fast than with hub a plurality of NAND type flash memory set being synthesized.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the utility model is further specified.
Fig. 1 is that the page register of the utility model enables one of control type high capacity U disc synoptic diagram.
Fig. 2 is two synoptic diagram that the page register of the utility model enables the control type high capacity U disc.
Fig. 3 is that the NAND type flash memory of the utility model enables one of control type high capacity U disc synoptic diagram.
Fig. 4 is two synoptic diagram that the NAND type flash memory of the utility model enables the control type high capacity U disc.
In Fig. 1,1. basic external data line, 2. additional external data line, 3. code translator; 4. driving circuit output line, 5. page register 1,6. page register 1 Enable Pin, 7. page register 1 output line; 8.NAND type flash memory 1,9. page register 2,10. page register 2 Enable Pins, 11. page registers, 2 output lines; 12.NAND type flash memory 2,13. driving circuits, 14. read-write controllers, 1,15. read-write controller 2.
In Fig. 2,1. basic external data line, 2. additional external data line, 4. driving circuit output line; 5. page register 1,6. page register 1 Enable Pin, 7. page register 1 output line, 8.NAND type flash memory 1; 9. page register 2,10. page register 2 Enable Pins, 11. page registers, 2 output lines, 12.NAND type flash memory 2; 13. driving circuit, 14. read-write controllers, 1,15. read-write controller 2.
In Fig. 3,1. external data line, 2. page register, the 3. additional output line of page register; 4. code translator, 5. driving circuit output line, 6.NAND type flash memory 1; 7.NAND type flash memory 1 Enable Pin, the 8. basic output line of page register, 9.NAND type flash memory 2; 10.NAND type flash memory 2 Enable Pins, 11. driving circuits, 12. public read-write controllers.
In Fig. 4,1. external data line, 2. page register; 3. the additional output line of page register, 5. driving circuit output line, 6.NAND type flash memory 1; 7.NAND type flash memory 1 Enable Pin, the 8. basic output line of page register, 9.NAND type flash memory 2; 10.NAND type flash memory 2 Enable Pins, 11. driving circuits, 12. public read-write controllers.
Embodiment
In Fig. 1; Basic external data line (1) is connected with page register 1 (5) input end; Page register 1 (5) input end is connected with page register 2 (9) input ends, and additional external data line (2) is connected with code translator (3) input end, and decoder output is connected with driving circuit (13) input end; Driving circuit (13) output terminal (4) is connected with (10) with page register 2 (9) Enable Pins (6) with page register 1 (5) respectively, and page register 1 (5) output terminal (7) is connected with NAND type flash memory 1 (8); If page register 1 (5) enables effectively, read-write controller 1 (14) control that is connected between page register 1 (5) and the NAND type flash memory 1 (8) is imported NAND type flash memory 1 (8) interior data page register 1 (5) into or page register 1 (5) interior data is write NAND type flash memory 1 (8); Page register 2 (9) output terminals (11) are connected with NAND type flash memory 2 (12); If page register 2 (9) enables effectively, read-write controller 2 (15) controls that are connected between page register 2 (9) and the NAND type flash memory 2 (12) are imported NAND type flash memory 2 (9) interior data page register 2 (12) into or page register 2 (9) interior data are write NAND type flash memory 2 (12).
In Fig. 2; Basic external data line (1) is connected with page register 1 (5) input end; Page register 1 (5) input end is connected with page register 2 (9) input ends; Additional external data line (2) is connected with driving circuit (13) input end, and driving circuit (13) output terminal (4) is connected with (10) with the Enable Pin (6) of page register 1 (5) and page register 2 (9) respectively, and the output terminal (7) of page register 1 (5) is connected with NAND type flash memory 1 (8); If page register 1 (5) enables effectively, read-write controller 1 (14) control that is connected between page register 1 (5) and the NAND type flash memory 1 (8) is imported NAND type flash memory 1 (8) interior data page register 1 (5) into or page register 1 (5) interior data is write NAND type flash memory 1 (8); Page register 2 (9) output terminals (11) are connected with NAND type flash memory 2 (12); If page register 2 (9) enables effectively, read-write controller 2 (15) controls that are connected between page register 2 (9) and the NAND type flash memory 2 (12) are imported NAND type flash memory 2 (9) interior data page register 2 (12) into or page register 2 (9) interior data are write NAND type flash memory 2 (12).
In Fig. 3; External data line (1) is connected with page register (2) input end; The basic output terminal (8) of page register (2) is connected with NAND type flash memory 1 (6) input end; NAND type flash memory 1 (6) input end is connected with NAND type flash memory 2 (9) input ends; The additional output terminal (3) of page register (2) is connected with code translator (4) input end; Decoder output is connected with driving circuit (11) input end, and driving circuit (11) output terminal (5) is connected with NAND type flash memory 2 (9) Enable Pins (10) with NAND type flash memory 1 (6) Enable Pin (7) respectively, is connected on that public read-write controller (12) control between page register (2) and the NAND type flash memory will enable in the effective NAND type flash memory that data are imported page register (2) into or with the effective NAND type of the interior data WE of page register (2) flash memory.
In Fig. 4; External data line (1) is connected with page register (2) input end; The basic output terminal (8) of page register (2) is connected with NAND type flash memory 1 (6) input end; NAND type flash memory 1 (6) input end is connected with NAND type flash memory 2 (9) input ends; The additional output terminal (3) of page register (2) is connected with driving circuit (11) input end; Driving circuit (11) output terminal (5) is connected with NAND type flash memory 2 (9) Enable Pins (10) with NAND type flash memory 1 (6) Enable Pin (7) respectively, is connected on that public read-write controller (12) control between page register (2) and the NAND type flash memory will enable in the effective NAND type flash memory that data are imported page register (2) into or with the effective NAND type of the interior data WE of page register (2) flash memory.
Claims (3)
1. the high capacity U disc of a substituting for computer hard disc; One of its characteristic is: external data line quantity is deposited input end quantity greater than the page; A page is deposited output terminal and is connected with data line with a NAND type flash memory address, connects a read-write controller between a page register and a NAND type flash memory, and all the identical numbering input end of page register is connected in parallel; Basic external data line (1) is connected with the page register input end; Additional external data line (2) is connected with code translator (3) input end, and code translator (3) output terminal is connected with driving circuit (13) input end, and driving circuit (13) output terminal (4) is connected with each page register Enable Pin respectively; If additional external data line (2) quantity is no less than page register quantity, additional external data line (2) directly is connected with driving circuit (13) input end, and driving circuit (13) output terminal (4) is connected with each page register Enable Pin respectively; Two of its characteristic is: page register output terminal quantity is greater than NAND type flash memory address and data line quantity; All identical numbered address of NAND type flash memory and data line are connected in parallel; External data line (1) is connected with page register (2) input end; The basic output terminal (8) of page register (2) is connected with data line with NAND type flash memory address, and public read-write controller (12) is connected between page register (2) and each the NAND type flash memory, and the additional output terminal (3) of page register (2) is connected with code translator (4) input end; Code translator (4) output terminal is connected with driving circuit (11) input end, and driving circuit (11) output terminal (5) is connected with each NAND type flash memory Enable Pin respectively; If additional output terminal (3) quantity of page register (2) is no less than NAND type flash memory quantity, the additional output terminal (3) of page register (2) is connected with driving circuit (11) input end, and driving circuit (11) output terminal (5) is connected with each NAND type flash memory Enable Pin respectively.
2. the high capacity U disc of a kind of substituting for computer hard disc according to claim 1; It is characterized in that: said each page register Enable Pin is one of its mains terminals or ground terminal, and said driving circuit (13) output terminal (4) is connected with one of each page register mains terminals or ground terminal respectively.
3. the high capacity U disc of a kind of substituting for computer hard disc according to claim 1; It is characterized in that: said each NAND type flash memory Enable Pin is one of its mains terminals or ground terminal, and said driving circuit (11) output terminal (5) is connected with one of each NAND type flash memory mains terminals or ground terminal respectively.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2011203416487U CN202178059U (en) | 2011-09-13 | 2011-09-13 | High-capacity USB flash disk replacing hard disc |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN2011203416487U CN202178059U (en) | 2011-09-13 | 2011-09-13 | High-capacity USB flash disk replacing hard disc |
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CN202178059U true CN202178059U (en) | 2012-03-28 |
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CN2011203416487U Expired - Fee Related CN202178059U (en) | 2011-09-13 | 2011-09-13 | High-capacity USB flash disk replacing hard disc |
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CN (1) | CN202178059U (en) |
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2011
- 2011-09-13 CN CN2011203416487U patent/CN202178059U/en not_active Expired - Fee Related
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP02 | Change in the address of a patent holder |
Address after: The development of the port district of Ji'nan city Shandong province 250101 Fengming road Shandong Jianzhu University School of information and electrical Patentee after: Wei Ming Address before: 250021, room 1, unit 2, building 99-2, No. 102, Jianshe Road, Shandong, Ji'nan Patentee before: Wei Ming |
|
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120328 Termination date: 20120913 |