CN202142532U - IGBT module capable of effectively restraining surge voltage - Google Patents
IGBT module capable of effectively restraining surge voltage Download PDFInfo
- Publication number
- CN202142532U CN202142532U CN201120198069U CN201120198069U CN202142532U CN 202142532 U CN202142532 U CN 202142532U CN 201120198069 U CN201120198069 U CN 201120198069U CN 201120198069 U CN201120198069 U CN 201120198069U CN 202142532 U CN202142532 U CN 202142532U
- Authority
- CN
- China
- Prior art keywords
- igbt
- igbt module
- chip
- surge voltage
- base plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
- H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Power Conversion In General (AREA)
Abstract
The utility model discloses an IGBT (Insulated Gate Bipolar Transistor) module capable of effectively restraining surge voltage. The IGBT module comprises an IGBT module body and pins connected at the end part of the IGBT module body, wherein the IGBT module consists of a base plate, a substrate welded on the base plate, an IGBT chip and a diode chip both arranged on the substrate, and a casing bulked on the base plate; and the electrodes of the IGBT chip and the diode chip are connected with the pins through electric wires. Therefore, the IGBT chip and the diode chip are combined to form the IGBT module, and the surge voltage generated by the instant turn-off of the IGBT chip is eliminated by the diode, and is restrained within the voltage level range of the IGBT, so the IGBT chip is prevented from being punctured and burned out due to over voltage, the reliable running of the IGBT chip is effectively ensured, and the safety of that is also guaranteed.
Description
Technical field
The utility model relates to the power electric component art, refers in particular to the IGBT module that a kind of effective inhibition IBGT turn-offs surge voltage.
Background technology
Because insulation canopy bipolar transistor (IGBT) has advantages such as the driving of being prone to, switching frequency height, casing insulation, become the main flow switching device of the big electric current of series such as automotive electronics, electromagnetic oven, high-power circuit at present.The utmost points such as the voltage of IGBT (Vces) are its limiting values of bearing forward blocking voltage; Surpassing this value IGBT will breakdownly burn, so the IGBT peak voltage that suppresses IGBT in service is an important indicator that is related to whole switching device system dependability.
In the use of IGBT; There is stray inductance in the circuit that is electrically connected with IBTG; There is distributed inductance in the IGBT element internal, thus IGTB can produce when turn-offing one be higher than the bus direct voltage peak voltage, the part that wherein exceeds busbar voltage is called turn-offs overvoltage or turn-offs surge voltage.IGBT module with 600V/400A is an example; When busbar voltage adopts the 350V system; When if the phase current effective value of drive motors reaches 250A, the shutoff surge voltage that motor driven systems produces just is easy to surpass 250V, and the due to voltage spikes value of DC bus-bar voltage has just surpassed the electric pressure 600V of IGBT like this; IGBT will over-voltage breakdown burn, and is necessary so design the circuit protection IBGT element of the shutoff surge voltage of a kind of effective inhibition IGBT.
The utility model content
In view of this, the utility model is to the disappearance of prior art existence, and its main purpose provides a kind of IGBT module of effective inhibition surge voltage, thereby voltage is suppressed in the utmost point scopes such as voltage of IGBT, guarantees the safety of IGBT module.
For realizing above-mentioned purpose, the utility model adopts following technical scheme:
A kind of IGBT module of effective inhibition surge voltage; This IGBT module comprises IGBT module body and the pin that is connected IGBT module body end; Said IGBT module body comprises base plate, be welded in substrate on the base plate, be arranged at igbt chip and the diode chip for backlight unit on the substrate and be fastened on the shell on the base plate, and the electrode of said igbt chip and diode chip for backlight unit is connected with pin respectively.
As a kind of preferred version, said igbt chip is connected with pin through circuitry lines with diode chip for backlight unit.
As a kind of preferred version, said substrate lower end one side is provided with the first bigger containing cavity of a volume, and opposite side is provided with the second less containing cavity of a volume, and igbt chip places first containing cavity, and diode chip for backlight unit places second containing cavity.
As a kind of preferred version, said substrate set inside has many circuitry lines, and an end of each circuitry lines exposes in the electrode electricity of substrate surface with igbt chip and diode chip for backlight unit and is connected, and the other end is connected with pin.
As a kind of preferred version, said base plate is provided with several fixture blocks, and said shell is provided with several draw-in grooves that matches with fixture block, and each fixture block is corresponding to be interlocked with each draw-in groove.
As a kind of preferred version, said pin has three, is respectively collector electrode, emitter and grid.
As a kind of preferred version, said IGBT module is provided with the through hole of always putting on lower surface.
After the utility model adopts technique scheme; Its beneficial effect is, through igbt chip and diode chip for backlight unit being assembled into the IGBT module, the surge voltage that moment produces when eliminating the igbt chip shutoff by diode; Surge voltage is suppressed in the utmost point scopes such as voltage of IBGT; The situation of avoiding igbt chip to burn because of overvoltage is breakdown, thus the igbt chip reliability service effectively guaranteed, guarantee the safety of igbt chip.
Be architectural feature and the effect of more clearly setting forth the utility model, come the utility model is elaborated below in conjunction with accompanying drawing and specific embodiment.
Description of drawings
Fig. 1 is the package assembly front view of the embodiment of the utility model;
Fig. 2 is the internal structure front view of the embodiment of the utility model.
The accompanying drawing identifier declaration:
100, IGBT module 10, IGBT module body
11, base plate 111, first through hole
112, first fixture block 113, second fixture block
114, the 3rd fixture block 12, substrate
121, first containing cavity 122, second containing cavity
123, circuitry lines end 13, igbt chip
14, diode core 15, shell
151, second through hole 20, pin.
Embodiment
See also shown in Figure 3ly, it has demonstrated the concrete structure of the embodiment of the utility model, and this IGBT module 100 comprises IGBT module body 10 and the pin 20 that is connected with IGBT module body 10 ends.Said IGBT module body 10 is rectangular-shaped, and it comprises base plate 11, be welded in substrate 12 on the base plate 11, be arranged at igbt chip 13 and 14 in the diode core on the substrate 12 and be fastened on the shell 15 on the base plate.
Particularly; Said base plate 11 is processed by Cu alloy material; These base plate 11 middle parts have first through hole 111 on the upper side; And the left and right sides of first through hole 111 is provided with one group of first symmetrical fixture block 112, and the left and right sides, base plate 11 middle part upwards is provided with one group of second symmetrical fixture block 113, and base plate 11 tip edge both sides are provided with one group of the 3rd fixture block 114.
Said substrate 12 is positioned at the bottom of first through hole 111; It is to be processed by the ceramic copper-clad material; The left side, surface of these substrate 12 lower ends is provided with the first bigger containing cavity 121 of a volume, and the right side is provided with the second less containing cavity 122 of a volume, and tool has many circuitry lines of being processed by electrical conductor material in substrate 12 set inside; Expose on substrate 12 surfaces each circuitry lines end 123, and the other end connects with corresponding pin respectively.
Said igbt chip 13 is rectangular bulk with diode chip for backlight unit 14; And it is big that the volume of the volume ratio diode chip for backlight unit 14 of igbt chip 13 is wanted; These igbt chip 13 correspondences are assembled in first containing cavity 121 of substrate 12; IGBT has three electrodes, and each electrode pair should electrically contact with the circuit bank end 123 of drawing in the substrate 11; Said diode chip for backlight unit 14 correspondences are assembled in second containing cavity 122 of substrate 12, and it has two electrodes, each electrode also corresponding with substrate 12 in circuitry lines end 123 electrically contact.
The outer casing inner wall that first through hole 111 of the corresponding on the upper side base plate 11 in said shell 15 middle parts is provided with second through hole, 151, the second through holes, 151 both sides is provided with one group of first symmetrical draw-in groove, and this first draw-in groove and above-mentioned first fixture block 112 are interlocked; Shell 15 left and right sides are to having one group of second symmetrical draw-in groove, and this second draw-in groove and last art second fixture block 113 are interlocked; Shell 15 tip edge both sides are provided with one group of the 3rd draw-in groove, and the 3rd draw-in groove and above-mentioned the 3rd fixture block 114 are interlocked, thereby shell is pressed on igbt chip 13 and diode chip for backlight unit 14 on the substrate 12.
Said pin 20 has three, is used for and the circuit board welding, and these three pins 20 all are arranged on the below of IGBT module body 10, and keep certain distance between the adjacent two pins 20, enable successfully to be inserted in the jack of circuit board.Wherein, middle pin is that the pin on collector electrode C, the left side is that the pin on grid G, the right is an emitter E, and collector electrode C directly is connected with the base plate one, and grid G and emitter E respectively with substrate in circuitry lines be connected.
The design focal point of the utility model is; Through igbt chip and diode chip for backlight unit are assembled into the IGBT module; Surge voltage by the moment generation of diode elimination igbt chip is suppressed at surge voltage in the utmost point scopes such as voltage of IBGT the situation of avoiding igbt chip to burn because of overvoltage is breakdown; Thereby effectively guaranteed the igbt chip reliability service, guaranteed the safety of igbt chip.
The above; It only is the preferred embodiment of the utility model; Be not that the technical scope of the utility model is done any restriction; So every technical spirit according to the utility model all still belongs in the scope of the utility model technical scheme any trickle modification, equivalent variations and modification that above embodiment did.
Claims (7)
1. IGBT module that effectively suppresses surge voltage; This IGBT module comprises IGBT module body and the pin that is connected IGBT module body end; It is characterized in that: said IGBT module body comprises base plate, be welded in substrate on the base plate, be arranged at igbt chip and the diode chip for backlight unit on the substrate and be fastened on the shell on the base plate, and the electrode of said igbt chip and diode chip for backlight unit is connected with pin respectively.
2. the IGBT module of a kind of effective inhibition surge voltage according to claim 1 is characterized in that: said igbt chip is connected with pin through circuitry lines with diode chip for backlight unit.
3. the IGBT module of a kind of effective inhibition surge voltage according to claim 1; It is characterized in that: said substrate lower end one side is provided with the first bigger containing cavity of a volume; Opposite side is provided with the second less containing cavity of a volume; Above-mentioned igbt chip places first containing cavity, and diode chip for backlight unit places second containing cavity.
4. the IGBT module of a kind of effective inhibition surge voltage according to claim 1; It is characterized in that: said substrate set inside has many circuitry lines; One end of each circuitry lines exposes in the electrode electricity of substrate surface with igbt chip and diode chip for backlight unit and is connected, and the other end is connected with pin.
5. the IGBT module of a kind of effective inhibition surge voltage according to claim 1 is characterized in that: said base plate is provided with several fixture blocks, and said shell is provided with several draw-in grooves that matches with fixture block, and each fixture block is corresponding to be interlocked with each draw-in groove.
6. the IGBT module of a kind of effective inhibition surge voltage according to claim 1 is characterized in that: said pin has three, is respectively collector electrode, emitter and grid.
7. the IGBT module of a kind of effective inhibition surge voltage according to claim 1 is characterized in that: said IGBT module is provided with the through hole of always putting on lower surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120198069U CN202142532U (en) | 2011-06-14 | 2011-06-14 | IGBT module capable of effectively restraining surge voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120198069U CN202142532U (en) | 2011-06-14 | 2011-06-14 | IGBT module capable of effectively restraining surge voltage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202142532U true CN202142532U (en) | 2012-02-08 |
Family
ID=45553577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201120198069U Expired - Fee Related CN202142532U (en) | 2011-06-14 | 2011-06-14 | IGBT module capable of effectively restraining surge voltage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202142532U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111316554A (en) * | 2018-09-27 | 2020-06-19 | 富士电机株式会社 | Power conversion device |
-
2011
- 2011-06-14 CN CN201120198069U patent/CN202142532U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111316554A (en) * | 2018-09-27 | 2020-06-19 | 富士电机株式会社 | Power conversion device |
| CN111316554B (en) * | 2018-09-27 | 2023-09-22 | 富士电机株式会社 | Power conversion device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103515365B (en) | A kind of high-power compression joint type IGBT device | |
| CN102683403A (en) | Trench gate charge storage type insulated gate bipolar transistor (IGBT) | |
| CN108122896B (en) | Thin power module suitable for high-frequency application | |
| CN102082429A (en) | IGBT (Insulated Gate Bipolar Translator) shut-off surge voltage clamp and suppression circuit | |
| CN109768694A (en) | A kind of power module with fuse | |
| CN202142532U (en) | IGBT module capable of effectively restraining surge voltage | |
| CN109768039A (en) | A kind of two-side radiation power module | |
| CN204793295U (en) | Slim power module | |
| CN108767001B (en) | Trench IGBT device with shielding gate | |
| CN212517176U (en) | Direct plug-in MOSFET transistor | |
| CN104465605A (en) | Semiconductor chip packaging structure | |
| CN109585436A (en) | A kind of power module of interspersed branch's layout | |
| CN105957860B (en) | A kind of power module equipped with insulating barrier | |
| CN203277372U (en) | Igbt module package | |
| CN114759078A (en) | Reverse conducting insulated gate bipolar transistor | |
| CN210986068U (en) | Novel IGBT negative pressure turn-off circuit | |
| CN208352289U (en) | A kind of encapsulating structure of high-power IGBT chip | |
| CN204204849U (en) | A kind of chip-packaging structure | |
| CN109560066A (en) | A kind of power module with gap bridge conductive layer | |
| CN109768036A (en) | A kind of power module with reflowing conductive layer | |
| CN105895608B (en) | A kind of power module of electrode packet insulating layer | |
| CN213879621U (en) | Power module and converter of wind generating set | |
| CN113394181B (en) | Power switch assembly and method for fixing radiator potential thereof | |
| CN109585437A (en) | A kind of multilayer power module | |
| CN204204845U (en) | A kind of semiconductor chip package |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120208 Termination date: 20190614 |