CN213879621U

CN213879621U - Power module and converter of wind generating set

Info

Publication number: CN213879621U
Application number: CN202023222703.9U
Authority: CN
Inventors: 马东凯; 曹欣; 梅春晓; 张二辉
Original assignee: Hebei Suntien New Energy Technology Co Ltd; Beijing Goldwind Smart Energy Service Co Ltd
Current assignee: Hebei Suntien New Energy Technology Co Ltd; Beijing Goldwind Smart Energy Service Co Ltd
Priority date: 2020-12-28
Filing date: 2020-12-28
Publication date: 2021-08-03
Anticipated expiration: 2030-12-28

Abstract

The utility model provides a power module and wind generating set's converter, power module includes: water-cooling the substrate; the IGBT module is mounted on the water-cooling substrate; an IGBT adapter board disposed on the IGBT module and configured to drive the IGBT module; a first insulating barrier provided on a first side of the IGBT module and having a through hole; a snubber capacitor disposed between the collector and emitter of the IGBT module and on a first side of the IGBT module; and the integrated laminated busbar is arranged on the first side of the IGBT module and penetrates through the through hole of the first insulating baffle to be electrically connected with the IGBT module and the absorption capacitor. According to the utility model discloses a power module has suppressed effectively and has caused overvoltage impact by too high turn-off peak voltage to power module's malfunction has been reduced.

Description

Power module and converter of wind generating set

Technical Field

The utility model relates to a power module and wind generating set's including power module converter.

Background

At present, a power module is widely applied to a converter in a wind generating set, and the performance of the power module influences the performance of the wind generating set.

In the prior art, power modules typically include an active clamp circuit and a push-pull drive circuit. However, the turn-off characteristics of Insulated Gate Bipolar Transistors (IGBTs) in such power modules are susceptible to an excessively high turn-off spike voltage, resulting in a risk of malfunction of the power module, and may cause the IGBT terminal voltage to be excessively high, resulting in IGBT damage.

In addition, through the actual survey discovery to wind generating set, the power module receives the interference easily to stray inductance is great, influences the power module steady operation.

In a word, the power module in the prior art has the problems of easy occurrence of false operation, overhigh IGBT terminal voltage, easy interference and large stray inductance.

SUMMERY OF THE UTILITY MODEL

The present invention has been made in view of the above problems. An object of the utility model is to provide a power module and wind generating set's including power module converter to prevent to lead to the power module malfunction because the turn-off spike voltage of IGBT module is too high, reduce the interference and reduce stray inductance, thereby improve power module's stability.

According to one general aspect, the present invention provides a power module comprising: water-cooling the substrate; the IGBT module is mounted on the water-cooling substrate; an IGBT adapter board disposed on the IGBT module and configured to drive the IGBT module; a first insulating barrier provided on a first side of the IGBT module and having a through hole; a snubber capacitor disposed between the collector and emitter of the IGBT module and on a first side of the IGBT module; and the integrated laminated busbar is arranged on the first side of the IGBT module and penetrates through the through hole of the first insulating baffle to be electrically connected with the IGBT module and the absorption capacitor.

Preferably, the integrated laminated busbar may include at least one pair of a first conductive portion passing through the through hole of the first insulation barrier and electrically connected to the IGBT module, and a second conductive portion for connection with the outside.

Preferably, the first conductive part may include a first connection terminal and a second connection terminal electrically connected to a collector and an emitter of the IGBT module, respectively.

Preferably, the absorption capacitor may include first and second electrode terminals, the first and second connection terminals being electrically connected to the first and second electrode terminals of the absorption capacitor, respectively.

Preferably, the absorption capacitor may be disposed above the IGBT module, the first electrode terminal of the absorption capacitor and the collector of the IGBT module may be disposed on upper and lower sides of the first connection terminal of the first conductive part, respectively, and the second electrode terminal of the absorption capacitor and the emitter of the IGBT module may be disposed on upper and lower sides of the second connection terminal of the first conductive part, respectively.

Preferably, the integrated laminated busbar may further include an insulating layer, the insulating layer encapsulates the integrated laminated busbar such that the first conductive portion and the second conductive portion are exposed, and the first conductive portion and the second conductive portion are respectively located at two opposite sides of the insulating layer.

Preferably, the power module may further include: a second insulating barrier provided on a second side of the IGBT module opposite to the first side and having a through hole; and the alternating current busbar is arranged on the second side of the IGBT module and penetrates through the through hole of the second insulating baffle plate to be electrically connected with the IGBT module.

Preferably, a plurality of components may be disposed on the IGBT adapter board, the plurality of components may be fixed on the IGBT adapter board by means of patch welding, and the IGBT adapter board may include a protective layer formed on an outer surface of the IGBT adapter board, and the protective layer is a surface treatment layer having moisture-proof, dust-proof, and corrosion-proof properties.

Preferably, the IGBT module may include three IGBTs disposed in parallel, and may include three absorption capacitors respectively connected to the three IGBTs.

According to another general aspect, the present invention provides a converter of a wind power plant, the converter comprising a power module as described above.

According to the utility model discloses a power module accessible increases the absorption capacitance and absorbs the too high turn-off peak voltage of IGBT module tip, suppresses the overvoltage impact that the too high turn-off peak voltage of IGBT module tip caused effectively to reduce power module's malfunction.

According to the utility model discloses a power module structurally optimizes, specifically can adopt female the arranging of integral type stromatolite to reduce stray inductance to improve power module stability.

In addition, according to the utility model discloses a power module is through optimizing circuit design and water-cooling base plate design for the fault rate of power module reduces; the stability and the reliability of the IGBT adapter plate are improved by improving the connection mode of components on the IGBT adapter plate; and the risk of circuit aging and damage caused by environmental problems is reduced by the protective layer on the IGBT adapter board.

Drawings

The above and other aspects, features and other advantages of the present invention will become apparent and more readily appreciated from the following detailed description of exemplary embodiments, taken in conjunction with the accompanying drawings of which:

fig. 1 is a schematic diagram illustrating an exploded structure of a power module according to an exemplary embodiment of the present invention.

Fig. 2 is a schematic diagram illustrating a structure of a power module according to an exemplary embodiment of the present invention after assembly.

Fig. 3 is a schematic diagram illustrating an integrated laminated busbar in a power module according to an exemplary embodiment of the present invention.

Description of reference numerals:

11-a water-cooled substrate; 12-an IGBT module; 13-IGBT adapter plate; 14-a first insulating barrier; 15-a second insulating barrier; 16-an integral laminated busbar; 17-alternating current bus bar; 18-absorption capacitance; 161-a first conductive portion; 162-a second conductive portion; 163-an insulating layer; 1611 — first connection terminal; 1612-second connection terminal.

Detailed Description

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be understood that in the following description of the embodiments and the accompanying drawings, the same or similar components are denoted by the same reference numerals, and overlapping description is omitted.

It will be understood that, although various elements may be described herein using terms such as "first," "second," these elements should not be limited by these terms. Rather, these terms are only used to distinguish one element from another. Thus, a first element referred to in the exemplary embodiments described herein may also be referred to as a second element without departing from the teachings of the exemplary embodiments.

In addition, for the sake of easy description, the terms "inside", "outside", "up" and "down" are used in the same way as the drawings, but do not limit the structure of the present invention.

Fig. 1 is a schematic view illustrating an exploded structure of a power module according to an exemplary embodiment of the present invention, and fig. 2 is a schematic view illustrating a structure of a power module according to an exemplary embodiment of the present invention after assembly.

As shown in fig. 1 and 2, a power module according to an exemplary embodiment may include: the IGBT device comprises a water-cooled substrate 11, an IGBT12, an IGBT adapter plate 13, a first insulating baffle 14, a absorption capacitor 18 and an integrated laminated busbar 16. Wherein, IGBT module 12 is installed on water-cooling base plate 11, and IGBT adapter plate 13 sets up on IGBT module 12 for drive IGBT module 12. The first insulating barrier 14 is disposed on a first side of the IGBT module 12, and has a through hole formed thereon. The absorption capacitance 18 is disposed between the collector (C) and emitter (E) of the IGBT module 12, and is located on a first side of the IGBT module 12. An integral laminated busbar 16 is also provided on the first side of the IGBT module 12, passes through the through-hole of the first insulating barrier 14, and electrically connects the IGBT module 12 and the absorption capacitor 18.

The IGBT module 12 may include three IGBTs arranged in parallel, i.e., a triple parallel IGBT module. However, the present disclosure is not limited to the specific number and connection manner of the IGBTs included in the IGBT module 12. As shown in fig. 1 and 2, the power module according to an exemplary embodiment may be provided with three absorption capacitors 18 corresponding to three IGBTs disposed in parallel, respectively, wherein each absorption capacitor 18 may be connected to a corresponding IGBT via an integral laminated busbar 16. That is, the absorption capacitance 18 is provided in pairs with the IGBTs in the IGBT module 12.

In the prior art, the power module usually uses an active clamp circuit, and such a power module has the following technical problems: at the moment of switching off a switching tube of the IGBT, an excessively high switching-off spike voltage may cause malfunction of the active clamp circuit, resulting in a decrease in effectiveness of the clamp circuit, which may affect the switching-off characteristics of the IGBT module, so that the power module has a risk of malfunction, and an excessively high switching-off spike voltage may cause an excessively high terminal voltage of the IGBT module, resulting in damage to the power module. However, the power module according to the present embodiment uses the absorption capacitor 18, and the absorption capacitor 18 can absorb the turn-off spike voltage of the IGBT switch tube in the IGBT module 12 during the turn-off process, so that compared with the structure in the prior art in which the IGBT module is provided with the active clamp circuit, the power module can effectively suppress the overvoltage impact on the IGBT module caused by the spike voltage generated during the turn-off process of the IGBT module. In this case, the absorption capacitor 18 can improve the turn-off characteristics of the IGBT module, thereby reducing the risk of malfunction of the power module.

As described previously, the absorption capacitor 18, the first insulating barrier 14, and the integrated laminated busbar 16 may all be disposed on the first side of the IGBT module 12, i.e., the absorption capacitor 18, the first insulating barrier 14, and the integrated laminated busbar 16 may be disposed on the same side of the IGBT module 12. As shown in fig. 2, the integrated laminated bus bar 16 may be inserted into the through-holes of the first insulating barrier 14 from the outside of the first insulating barrier 14 to be electrically connected to the IGBT module 12 and the absorption capacitor 18 through the through-holes of the integrated laminated bus bar 16. Specifically, the connection terminal located inside the integrated laminated bus bar 16, after passing through the through hole of the first insulation barrier 14, may be located inside the first insulation barrier 14, and then may be electrically connected to both ends of the absorption capacitor 18, and may be electrically connected to the collector and emitter of the IGBT module 12. The structure of the integrated laminated bus bar 16 and its connection will be described in detail later in conjunction with fig. 3.

By way of example, the snubber capacitor 18, the integrated laminated busbar 16, and the IGBT module 12 may be connected together by a fastener (such as a bolt, screw, etc.). The absorption capacitor 18 may be disposed above the IGBT module 12, and the integrated laminated busbar 16 may be interposed between the IGBT module 12 and the absorption capacitor 18, but is not limited thereto.

As shown in fig. 3, the integrated laminated busbar 16 may include a first conductive portion 161, a second conductive portion 162, and an insulating layer 163. The first conductive portion 161, the second conductive portion 162, and the insulating layer 163 may be integrally formed, wherein the insulating layer 163 may be formed to encapsulate the integrated laminated busbar 16 such that the first conductive portion 161 and the second conductive portion 162 are exposed, and the first conductive portion 161 and the second conductive portion 162 are respectively located at opposite sides of the insulating layer 163. The second conductive part 162 may be electrically connected to the outside, for example, the second conductive part 162 may be electrically connected to the positive electrode and the negative electrode of the capacitor cell.

Referring to fig. 1 to 3, the first conductive part 161 may pass through the through hole of the first insulation barrier 14 and be electrically connected to the IGBT module 12. As shown in fig. 3, the first conductive portion 161 may include a first connection terminal 1611 and a second connection terminal 1612, and the first connection terminal 1611 and the second connection terminal 1612 may be electrically connected to the collector and emitter of the IGBT module 12, respectively.

As an embodiment, the first conductive portions 161 may be provided in three groups, where each group includes a pair of the first connection terminal 1611 and the second connection terminal 1612. Each pair of the first connection terminal 1611 and the second connection terminal 1612 may be electrically connected to the collector and emitter of the corresponding IGBT in the IGBT module 12, respectively. That is, the first conductive part 161 is provided in pair with the IGBT in the IGBT module 12. The number of sets of the first conductive parts 161 may vary depending on the number of IGBTs in the IGBT module 12, and for example, when the IGBT module 12 includes only one IGBT, the first conductive parts 161 may be arranged as one set, that is, include a pair of the first connection terminal 1611 and the second connection terminal 1612. In the example shown in fig. 1 to 3, the IGBT module includes three IGBTs, and therefore, the first conductive parts 161 are provided in three groups.

In addition, the absorption capacitance 18 may include a first electrode terminal and a second electrode terminal, and the first connection terminal 1611 and the second connection terminal 1612 may be further electrically connected to the first electrode terminal and the second electrode terminal of the absorption capacitance 18, respectively. In other words, the collector of the IGBT module 12 and the first electrode terminal of the absorption capacitance 18 are simultaneously connected to the first connection terminal 1611, and the emitter of the IGBT module 12 and the second electrode terminal of the absorption capacitance 18 are simultaneously connected to the second connection terminal 1612.

As previously described, the snubber capacitor 18 may be disposed above the IGBT module 12, and the integral laminated busbar 16 may be interposed between the IGBT and the snubber capacitor 18. Specifically, the first electrode terminal of absorption capacitance 18 and the collector electrode of the IGBT may be disposed respectively on the upper and lower sides of first connection terminal 1611 of first conductive portion 161, and the second electrode terminal of absorption capacitance 18 and the emitter electrode of the IGBT may be disposed respectively on the upper and lower sides of second connection terminal 1612 of first conductive portion 161.

In this case, at the moment of turn-off of the IGBT switching tube, the absorption capacitor 18 may absorb an excessively high turn-off spike voltage at the end of the IGBT, thereby preventing the IGBT terminal voltage from being excessively high to cause IGBT damage. Specifically, both electrode terminals of the absorption capacitor 18 are fixed to the upper side of the first conductive portion 161 of the integrated laminated bus bar 16 by fasteners, and the collector and emitter of the IGBT may be connected to the lower side of the first conductive portion 161, so that both electrode terminals of the absorption capacitor 18 may be disposed above the collector and emitter of the IGBT.

In prior art, power module's signal line overlength receives the interference easily to power module adopts split type female arranging usually, when installing, increases the insulating layer and carries out electrical isolation between two sets of female arranging of split type female arranging, but does so and can produce great stray inductance. However, in the power module according to the present invention, the absorption capacitor 18 may be connected to the IGBT module 12 through the first conductive portion 161 of the integrated laminated busbar 16, that is, the distance between the absorption capacitor 18 and the IGBT module 12 may be relatively short, which reduces interference, so that the stray inductance is relatively small.

Therefore, compare with the power module according to prior art, according to the utility model discloses a power module accessible uses the range upon range of female 16 that arranges of integral type to reduce stray inductance to improve power module's stability.

Referring back to fig. 1 and 2, the power module may further include a second insulating barrier 15 and an ac busbar 17.

Specifically, the second insulating barrier 15 may be disposed on a second side of the IGBT module 12 opposite to the first side. The second insulating barrier 15 may also have a through hole, similarly to the first insulating barrier 14, wherein the shape of the through hole is not particularly limited. In addition, the first insulating barrier 14 and the second insulating barrier 15 may have a relatively thick thickness to increase the load-bearing capacity of the insulating barriers and reduce the risk of damage to the insulating barriers, so that the damage rate of the insulating barriers may be reduced.

The ac busbar 17 may be disposed on the second side of the IGBT module 12. As shown in fig. 2, the ac busbar 17 may be secured to the IGBT module 12 by fasteners (e.g., bolts, screws, etc.). The ac busbar 17 may be electrically connected to the IGBT module 12, and specifically, the ac busbar 17 may pass through the through hole of the second insulating barrier 15 to be electrically connected to the ac terminal of the IGBT module 12. Although the ac busbar 17 is shown to have three sets of connection terminals connected to the ac terminals of the three IGBTs in the IGBT module 12, the ac busbar 17 may include connection terminals provided in pairs with the ac terminals of the IGBT module 12, but is not limited thereto. In addition, the other side of the ac busbar 17 opposite to the three sets of connection terminals may be electrically connected to the outside. As an embodiment, the ac busbar 17 may be an integrated ac busbar, but is not limited thereto.

Further, the water-cooled substrate 11 according to the embodiment has a heat dissipation function. Inside the water-cooled base plate 11, a fluid channel may be provided to guide a coolant to flow therethrough. The fluid channel is communicated with an external water inlet pipe and an external water outlet pipe so as to take away heat of the IGBT module through cooling water circulation. The heat transfer capacity of the water-cooled substrate 11 can be improved by increasing the heat transfer area of the pipe flow channel inside the water-cooled substrate 11, thereby improving the heat dissipation function of the water-cooled substrate 11.

The IGBT adapter board 13 in the power module according to the embodiment may include a plurality of components (not shown in detail). The plurality of components may be, but are not limited to, capacitors, resistors, diodes, etc. The factors such as the electromagnetic compatibility characteristic, the anti-interference performance, the line current-carrying capacity and the electric clearance of the IGBT adapter plate are comprehensively considered, and a plurality of components can be fixed on the IGBT adapter plate 13 in a patch welding mode (instead of a direct-insertion welding mode), so that the reliability of the production and processing technology of the IGBT adapter plate 13 and the stability of operation are improved.

The IGBT adapter board 13 may further include a protective layer (not shown) to prevent damage to the IGBT adapter board 13 caused by environmental moisture, excessive dust, salt spray corrosion, and the like. A protective layer may be formed on the outer surface of the IGBT adapter plate 13. The protective layer may be a surface treatment layer having moisture-proof, dust-proof, and corrosion-proof properties, but is not limited thereto as long as the protective layer can function to prevent the external environment from damaging the IGBT adapter plate 13. In case the IGBT adaptation board 13 is provided with a protective layer, the risk of ageing and damage of the power module due to environmental problems can be reduced.

As set forth above, the power module according to the above exemplary embodiments can absorb the excessively high turn-off spike voltage of the end portion of the IGBT module by increasing the absorption capacitance, effectively suppressing the overvoltage shock caused by the excessively high turn-off spike voltage of the end portion of the IGBT module, and thus reducing the malfunction of the power module.

In addition, the power module according to the above exemplary embodiment may structurally adopt the integrated laminated busbar to reduce stray inductance, thereby improving power module stability.

Furthermore, the power module according to the above exemplary embodiments may be applied to a converter of a wind turbine generator set, thereby improving performance of the converter of the wind turbine generator set.

The embodiments in the above embodiments can be further combined or replaced, and the embodiments are only descriptions of the preferred embodiments of the present invention, and are not limited to the concept and scope of the present invention, and various changes and modifications made by the technical solutions of the present invention by those skilled in the art without departing from the design concept of the present invention all belong to the protection scope of the present invention.

Claims

1. A power module, characterized in that the power module comprises:

a water-cooled substrate (11);

an IGBT module (12) mounted on the water-cooled substrate (11);

an IGBT adapter board (13) provided on the IGBT module (12) and configured to drive the IGBT module (12);

a first insulating barrier (14) provided on a first side of the IGBT module (12) and having a through hole;

a snubber capacitor (18) disposed between the collector and emitter of the IGBT module (12) and on a first side of the IGBT module (12); and

and the integrated laminated busbar (16) is arranged on the first side of the IGBT module (12), and the through hole penetrating through the first insulating baffle (14) is electrically connected with the IGBT module (12) and the absorption capacitor (18).

2. The power module according to claim 1, wherein the integrated laminated busbar (16) includes at least one pair of a first conductive portion (161) and a second conductive portion (162), the first conductive portion (161) passing through the through hole of the first insulating barrier (14) and being electrically connected to the IGBT module (12), the second conductive portion (162) being for connection with the outside.

3. A power module according to claim 2, characterized in that the first conductive part (161) comprises a first connection terminal (1611) and a second connection terminal (1612), the first connection terminal (1611) and the second connection terminal (1612) being electrically connected to the collector and emitter, respectively, of the IGBT module (12).

4. A power module according to claim 3, characterized in that the absorption capacitance (18) comprises a first and a second electrode terminal, the first and second connection terminals (1611, 1612) being electrically connected to the first and second electrode terminals, respectively, of the absorption capacitance (18).

5. The power module according to claim 4, characterized in that the absorption capacitance (18) is disposed above the IGBT module (12), a first electrode terminal of the absorption capacitance (18) and a collector electrode of the IGBT module (12) are disposed respectively on an upper side and a lower side of a first connection terminal (1611) of the first conductive part (161), and a second electrode terminal of the absorption capacitance (18) and an emitter electrode of the IGBT module (12) are disposed respectively on an upper side and a lower side of a second connection terminal (1612) of the first conductive part (161).

6. The power module of claim 2, wherein the unitary laminated busbar (16) further comprises an insulating layer (163), the insulating layer (163) encapsulating the unitary laminated busbar (16) such that the first and second conductive portions (161, 162) are exposed, the first and second conductive portions (161, 162) being located on opposite sides of the insulating layer (163), respectively.

7. The power module of claim 1, further comprising:

a second insulating barrier (15) provided on a second side of the IGBT module (12) opposite to the first side and having a through hole; and

and the alternating current busbar (17) is arranged on the second side of the IGBT module (12), and the alternating current busbar (17) penetrates through the through hole of the second insulating baffle (15) to be electrically connected with the IGBT module (12).

8. The power module according to any one of claims 1 to 7, wherein a plurality of components are provided on the IGBT adapter board (13), the plurality of components are fixed on the IGBT adapter board (13) by means of patch welding, and

the IGBT adapter board (13) comprises a protective layer, wherein the protective layer is formed on the outer surface of the IGBT adapter board (13), and the protective layer is a surface treatment layer with moisture-proof, dust-proof and corrosion-proof properties.

9. A power module according to any one of claims 1-7, characterized in that the IGBT module (12) comprises three IGBTs arranged in parallel and comprises three absorption capacitances (18), the three absorption capacitances (18) being connected with the three IGBTs, respectively.

10. A converter for a wind park, characterized in that it comprises a power module according to any one of claims 1 to 9.