CN113394181B - Power switch assembly and method for fixing radiator potential thereof - Google Patents
Power switch assembly and method for fixing radiator potential thereof Download PDFInfo
- Publication number
- CN113394181B CN113394181B CN202110653610.1A CN202110653610A CN113394181B CN 113394181 B CN113394181 B CN 113394181B CN 202110653610 A CN202110653610 A CN 202110653610A CN 113394181 B CN113394181 B CN 113394181B
- Authority
- CN
- China
- Prior art keywords
- power electronic
- potential
- switching
- heat sink
- switching element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 39
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000003990 capacitor Substances 0.000 claims description 19
- 230000005669 field effect Effects 0.000 claims description 13
- 229910044991 metal oxide Inorganic materials 0.000 claims description 13
- 150000004706 metal oxides Chemical class 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 description 31
- 238000010586 diagram Methods 0.000 description 16
- 238000007599 discharging Methods 0.000 description 15
- 230000017525 heat dissipation Effects 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000001939 inductive effect Effects 0.000 description 5
- 230000000740 bleeding effect Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 2
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4018—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by the type of device to be heated or cooled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4037—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Conversion In General (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present disclosure provides a power switch assembly comprising: a switch string formed by at least two power electronic components connected in series, wherein the at least two power electronic components are configured to operate in a mode of being simultaneously turned on and simultaneously turned off; a metal heat sink attached to the switch string to dissipate heat generated by the switch string during the operation; and an impedance network, wherein two ends of the impedance network are electrically connected between the common connection point of any two adjacent power electronic components in the switch string and the metal heat radiator.
Description
The application relates to a split application of an application patent application with the application number of 2016111877872, the application date of 2016, 12 and 20, and the application name of an anti-interference power electronic component and a method for fixing the potential of a radiator of the anti-interference power electronic component.
Technical Field
The present application relates to the field of power electronics, and more particularly, to an anti-interference power electronic component and a method for fixing a radiator potential of a power electronic element of the anti-interference power electronic component.
Background
In the field of power electronics, high power medium voltage converters, such as 10kV converters, 10kV or 35kV Static Var Generators (SVG) and the like, have been widely used at present. In order to adapt to high-voltage application occasions, the converters are often realized by adopting technical means such as module cascading, transformer step-down, device series connection and the like.
For reasons of volume and cost, a method of using a plurality of power electronic devices, i.e., a plurality of power electronic elements in series, has been widely used.
In the running process of the system, the radiator for radiating the power electronic device can induce high static electricity or alternating potential, so that the power electronic device is subjected to insulation breakdown or electromagnetic interference to the driving circuit, and the power electronic device is damaged or the driving circuit cannot work normally due to interference.
Disclosure of Invention
It is an object of the present disclosure to provide an anti-interference power electronic assembly and a method of fixing a heat sink potential for a power electronic element of such an anti-interference power electronic assembly, which overcome, at least in part, one or more of the problems due to the limitations and disadvantages of the related art.
Other features and advantages of the present disclosure will be apparent from the following detailed description, or may be learned in part by the practice of the disclosure.
According to one aspect of the present disclosure, there is provided an anti-interference power electronic assembly comprising:
a power electronic component comprising a conductive region, an insulating region, and a heat dissipating substrate, wherein the insulating region is located between the conductive region and the heat dissipating substrate to prevent electrical contact between the conductive region and the heat dissipating substrate;
a heat sink attached to the heat dissipating substrate for dissipating heat generated by the power electronic component; and
The induced charge discharging circuit comprises at least one resistor, and is electrically connected between the conductive area and the radiator to discharge the induced charge on the radiator, so that the potential on the conductive area is the same as or close to the potential on the radiator.
According to one embodiment, the induced charge bleed circuit further comprises a capacitor connected in parallel across the resistor.
According to one embodiment, wherein the heat sink comprises a metal heat sink.
According to one embodiment, wherein the heat sink is in direct contact with the heat dissipating substrate.
According to one embodiment, wherein the power electronic element is a switching element.
According to one embodiment, wherein the switching element is any one of an insulated gate bipolar transistor, a metal oxide semiconductor field effect transistor and a gate turn-off thyristor.
According to one embodiment, wherein the conductive region is any one of an emitter and a collector of the insulated gate bipolar transistor, a source and a drain of the metal oxide semiconductor field effect transistor, and a cathode and an anode of the gate turn-off thyristor.
According to one embodiment, wherein
The number of the power electronic components exceeds one, and are connected in series,
The number of the heat sinks is more than one and is the same as the number of the power electronic components, the heat sinks are attached to the corresponding heat dissipation substrates so as to dissipate heat generated by the corresponding power electronic components, and
The number of the induced charge discharging circuits is more than one, and the resistor is electrically connected between the corresponding conductive area and the radiator as the number of the power electronic elements is the same, so as to discharge the induced charge on the corresponding radiator, and the potential on the conductive area is the same as or close to the potential on the corresponding radiator.
According to one embodiment, wherein
The number of the power electronic elements is n, and the power electronic elements are connected in series,
The number of the heat sinks is one, the heat sinks are attached to n heat dissipation substrates to dissipate heat generated by n power electronic components, and
The number of the induced charge discharging circuits is one, the resistor is electrically connected between the midpoint of the series connection of the n power electronic elements and the heat sink to discharge the induced charge on the heat sink, wherein the midpoint is defined by
If n is an even number, the midpoint is the connection point of the n/2 th and n/2+1 th power electronic components, and
If n is an odd number, the midpoint is a connection point of the (n-1)/2 th power electronic element and the (n+1)/2 th power electronic element, or a connection point of the (n+1)/2 th power electronic element and the (n+3)/2 th power electronic element.
According to another aspect of the present disclosure, there is provided a method of fixing a heat sink potential for a power electronic element, wherein the power electronic element includes a conductive region, an insulating region, and a heat dissipating substrate, the insulating region being located between the conductive region and the heat dissipating substrate to prevent electrical contact between the conductive region and the heat dissipating substrate; the heat sink is attached to the heat dissipation substrate to dissipate heat generated by the power electronic component, the method comprising:
An induced charge bleed circuit is provided, the induced charge bleed circuit including at least one resistor electrically connected between the conductive region and the heat sink to bleed off the induced charge on the heat sink.
According to one embodiment, a capacitor is also provided in the induced charge bleed circuit, connected in parallel across the resistor.
According to one embodiment, wherein the heat sink comprises a metal heat sink.
According to one embodiment, the heat sink is brought into direct contact with the heat dissipating substrate.
According to one embodiment, wherein the power electronic element is a switching element.
According to one embodiment, wherein the switching element is any one of an insulated gate bipolar transistor, a metal oxide semiconductor field effect transistor and a gate turn-off thyristor.
According to one embodiment, wherein the conductive region is any one of an emitter and a collector of the insulated gate bipolar transistor, a source and a drain of the metal oxide semiconductor field effect transistor, and a cathode and an anode of the gate turn-off thyristor.
According to one embodiment, wherein
The number of the power electronic elements is more than one, and the power electronic elements are connected in series,
The number of the heat sinks is more than one and is the same as the number of the power electronic components, the heat sinks are attached to the corresponding heat dissipation substrates so as to dissipate heat generated by the corresponding power electronic components, and
The number of the induced charge discharging circuits is more than one, and the resistor is electrically connected between the corresponding conductive area and the radiator as the number of the power electronic elements so as to discharge the induced charges on the corresponding radiator.
According to one embodiment, wherein
The number of the power electronic elements is n, and the power electronic elements are connected in series,
The number of the heat sinks is set to be one, the heat sinks are attached to n heat dissipation substrates to dissipate heat generated by n power electronic components, and
The number of the induced charge discharging circuits is one, the resistor is electrically connected between the midpoint of the series connection of the n power electronic elements and the heat sink to discharge the induced charge on the heat sink, wherein the midpoint is defined by
If n is an even number, the midpoint is the connection point of the n/2 th and n/2+1 th power electronic components, and
If n is an odd number, the midpoint is a connection point of the (n-1)/2 th power electronic element and the (n+1)/2 th power electronic element, or a connection point of the (n+1)/2 th power electronic element and the (n+3)/2 th power electronic element.
According to the anti-interference power electronic component and the method for fixing the potential of the radiator for the anti-interference power electronic component, the potential of each power electronic component can be ensured to be the same as or close to the potential of the radiator for radiating the power electronic component, so that the insulation breakdown of the power electronic component can be prevented, the electromagnetic interference to a driving circuit is avoided, and meanwhile, the volume and the complexity of a system are not additionally increased.
For a further understanding of the nature and technical aspects of the present application, reference should be made to the following detailed description of the application and to the accompanying drawings, which are included to illustrate and not to limit the scope of the application.
Drawings
The above and other features and advantages of the present disclosure will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.
Fig. 1 is a schematic diagram of a topology of a prior art medium voltage converter circuit;
FIG. 2 is a schematic top view of the internal structure of a prior art power electronic component;
FIG. 3 is a schematic side view of the internal structure of the power electronics 1010 of FIG. 2 assembled with a heat sink;
FIG. 4 is a schematic top view of the external structure of a prior art power electronic component;
FIG. 5 is a schematic top view of the external structure of the power electronic component 1020 of FIG. 4 assembled with a heat sink;
FIG. 6 is a schematic diagram of one embodiment of an anti-tamper power electronic assembly of the present application;
FIG. 7 is a schematic diagram of yet another embodiment of an interference-free power electronic assembly of the present application;
FIG. 8 is an equivalent circuit diagram of the tamper resistant power electronics assembly 2010 of the present application shown in FIG. 7;
FIG. 9 is a schematic diagram of yet another embodiment of an interference-free power electronic assembly of the present application;
FIG. 10 is an equivalent circuit diagram of the tamper resistant power electronic component shown in FIG. 9;
FIG. 11 is a schematic diagram of yet another embodiment of an interference-free power electronic assembly of the present application;
FIG. 12 is an equivalent circuit diagram of the tamper resistant power electronic component shown in FIG. 11;
FIG. 13 is a flow chart of one embodiment of a method of fixing a heat sink potential for a power electronic component of the tamper resistant power electronic assembly described above;
FIG. 14 is a flow chart of yet another embodiment of a method for fixing the heat sink potential of a power electronic component of the tamper resistant power electronic assembly described above;
FIG. 15 is a flow chart of yet another embodiment of a method for fixing the heat sink potential of a power electronic component of the tamper resistant power electronic assembly described above; and
Fig. 16 is a flowchart of still another embodiment of a method for fixing a floating potential of a heat sink for a power electronic component of the above-described tamper-resistant power electronic assembly.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. However, the exemplary embodiments can be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus detailed descriptions thereof will be omitted.
Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the application. One skilled in the relevant art will recognize, however, that the application may be practiced without one or more of the specific details, or with other structures, components, steps, methods, etc. In other instances, well-known structures, components, or operations are not shown or described in detail to avoid obscuring aspects of the application.
An embodiment of the tamper resistant power electronic assembly of the present application is first described with reference to fig. 1-6.
Fig. 1 is a schematic diagram of a topology of a prior art medium voltage converter circuit. As shown in fig. 1, the medium voltage converter circuit 1000 includes a bus capacitor C B, a bus B, and a switching string S 1 -switching string S 6. Switch strings S 1 and S 4 constitute a U-phase arm, switch strings S 2 and S 5 constitute a V-phase arm, and switch strings S 3 and S 6 constitute a W-phase arm. The switch strings S 1 -S 6 are respectively formed by connecting a plurality of switch tubes S in series so as to adapt to high-voltage application occasions. The switching transistor S may be an Insulated Gate Bipolar Transistor (IGBT), or may be another power electronic device, i.e., a power electronic element, such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) or a gate turn-off thyristor (GTO). Since the switching tube S is subjected to high voltage and high current during operation, a radiator is required to radiate heat.
Fig. 2 is a schematic top view of an internal structure of a power electronic device in the prior art, where the power electronic device 1010 may be the switching tube S in fig. 1. As shown in fig. 2, the power electronic component 1010 includes a conductive region 1, an insulating region 2, and a heat dissipating substrate 3, wherein the insulating region 2 is located between the conductive region 1 and the heat dissipating substrate 3 to prevent electrical contact between the conductive region 1 and the heat dissipating substrate 3. The insulating region 2 may be made of a ceramic material, for example. The thickness of the insulating region 2 is ignored and a gap d is provided between the conductive region 1 and the heat dissipating substrate 3. Too high a voltage between the conductive area 1 and the heat-dissipating substrate 3 will break down the gap d, causing arcing, damaging the power electronics or the system, or creating electromagnetic interference, resulting in a drive circuit that does not work properly due to the interference.
Fig. 3 is a schematic side view of the internal structure of the power electronics 1010 of fig. 2 after assembly with a heat sink. As shown in fig. 3, the power electronics assembly 1010' includes a power electronics component 1010 and a heat sink 4. The heat sink 4 is attached to the heat-dissipating substrate 3 to dissipate heat generated by the power electronic component 1010. After the heat sink 4 is attached to the heat-dissipating substrate 3, both have the same potential.
Fig. 4 is a schematic top view of the external structure of a prior art power electronic component to better illustrate the structural features of the power electronic component. As shown in fig. 4, the power electronics 1020 includes a body 5 and electrodes 6-9. The main body 5 here includes the insulating region 2, the conductive region 1 surrounded by the insulating region 2, and the heat dissipating substrate 3 in fig. 2, but its outline is mainly represented by the size of the heat dissipating substrate 3, because the heat dissipating substrate 3 is at the outermost periphery of the power electronic component 1020. The electrode 6 is here for example a collector, the electrode 7 is for example an emitter, the electrode 8 is for example a gate, the electrode 9 is for example a gate ground, and the electrode 6-electrode 9 can be regarded as an external lead of the conductive region 1. During operation of power electronics 1020, electrodes 6 and 7 are subjected to high voltages and high currents and are therefore typically fabricated as very thick quadrangular columns, square in plan view, with circles representing the plan view of screw holes for connection, where the screws are located on the electrode lead copper bars.
Fig. 5 is a schematic top view of the external structure of the power electronic component 1020 of fig. 4 assembled with a heat sink. As shown in fig. 5, the power electronics assembly 1020' includes a power electronics element 1020 and a heat sink 4. The heat sink 4 is attached to the power electronic element 1020, i.e. the heat dissipation substrate of the power electronic element 1020, so as to dissipate heat generated by the power electronic element 1020, and when the power electronic element 1020 works, a floating potential is induced on the heat sink 4; or when the potential of the power electronic element 1020 changes, a floating potential is induced on the heat sink 4.
Figure 6 is a schematic diagram of one embodiment of an interference-free power electronic assembly of the present application. As shown in fig. 6, the tamper resistant power electronics assembly 2000 of the present application includes the power electronics assembly 1010' and the inductive charge bleed circuit 20 shown in fig. 3.
Since the power electronics 1010' have been fully described above, no further description is provided.
The induced charge discharging circuit 20 of the present application includes at least one resistor R electrically connected between the conductive region 1 and the heat sink 4 to discharge the induced charge on the heat sink 4 such that the potential on the conductive region 1 is the same as or close to the potential on the heat sink 4.
The conductive region 1 described in the embodiments of the present application mainly refers to a region to which electrodes to be subjected to high voltage and high current are connected during operation of a power electronic component, such as the collector 6 and the emitter 7 shown in fig. 4 and 5. The conductive region 1 described in the embodiments may also refer to a region to which electrodes receiving low voltage and small current during operation of the power electronic component are connected, such as the gate electrode 8 and the gate ground 9 shown in fig. 4 and 5.
Fig. 7 is a schematic diagram of yet another embodiment of the tamper resistant power electronic assembly of the present application. As shown in fig. 7, the tamper resistant power electronics 2010 of the present application includes the power electronics 1010' and the inductive charge bleed circuit 21 shown in fig. 3.
Since the power electronics 1010' have been fully described above, no further description is provided.
The induced charge bleed circuit 21 of the present embodiment further includes a capacitor C connected across the resistor R in parallel with the induced charge bleed circuit 20 of fig. 6. The capacitor C is used to increase the charge-discharge speed, and is particularly advantageous for discharging the electric charge induced on the radiator 4 by the alternating voltage or the high-frequency pulse voltage, and is more advantageous for discharging the high-frequency pulse potential.
Fig. 8 is an equivalent circuit diagram of the tamper resistant power electronics assembly 2010 of the present application shown in fig. 7. As shown in fig. 8, the tamper resistant power electronics assembly 2010' of the present application includes a power electronics element T, a heat sink H, a resistor R, and a capacitor C.
The power electronic element T shown in fig. 8 is, for example, the power electronic element 1010 shown in fig. 7. The heat sink H shown in fig. 8 is, for example, the heat sink 4 shown in fig. 7. The resistor R and the capacitor C shown in fig. 8 constitute, for example, an induced charge discharging circuit 21 shown in fig. 7.
Fig. 8 shows only one embodiment of the application in which the capacitor C may not be included.
As an embodiment of the anti-interference power electronic assembly of the present application, the aforementioned heat sink comprises a metal heat sink.
As an embodiment of the anti-interference power electronic assembly of the present application, the heat sink and the heat dissipating substrate are in direct contact.
As an embodiment of the tamper resistant power electronic assembly of the present application, the aforementioned power electronic element is a switching element.
As one embodiment of the tamper resistant power electronic component of the present application, the aforementioned switching element is any one of an Insulated Gate Bipolar Transistor (IGBT), a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), and a gate turn-off thyristor (GTO).
As an embodiment of the tamper resistant power electronic component of the present application, the aforementioned conductive region is any one of an emitter and a collector of an insulated gate bipolar transistor, a source and a drain of a metal oxide semiconductor field effect transistor, and a cathode and an anode of a gate turn-off thyristor.
Fig. 9 is a schematic diagram of yet another embodiment of the tamper resistant power electronic assembly of the present application. Fig. 10 is an equivalent circuit diagram of the tamper resistant power electronic component shown in fig. 9. As shown in fig. 9 and 10, in the tamper resistant power electronics assemblies 2020 and 2020' of the present application, the number of power electronics T may be more than one and are connected in series; meanwhile, the number of the heat sinks H is more than one and is the same as that of the power electronic elements T, and the heat sinks H are attached to the heat dissipation substrates of the corresponding power electronic elements T so as to dissipate heat generated by the corresponding power electronic elements T; meanwhile, the number of induced charge bleeding circuits, such as the circuits constituted by the resistor R and the capacitor C in fig. 10, is also more than one, and the same as the number of the power electronic elements T, the resistor R is electrically connected between the conductive region (such as the collector and the emitter) of the corresponding power electronic element T and the heat sink H to bleed the induced charge on the corresponding heat sink H, so that the potential on the conductive region of the power electronic element T is the same as or close to the potential on the corresponding heat sink H.
Although the circuit constituted by the resistor R and the capacitor C is used as the induced charge discharging circuit in fig. 10, the capacitor C may not be included.
In addition, the power electronic components T shown in fig. 9 are connected in series by the connection copper bars L, and the connection copper bars L are not related to the present application, so that the description thereof will not be repeated.
Fig. 11 is a schematic diagram of yet another embodiment of the tamper resistant power electronic assembly of the present application. Fig. 12 is an equivalent circuit diagram of the tamper resistant power electronic component shown in fig. 11. As shown in fig. 11 and 12, in the anti-interference power electronic components 2030 and 2030' of the application, the number of power electronic elements T is N and are connected in series, while the number of heat sinks H is one, the heat sinks H are attached to the respective heat dissipation substrates of the N power electronic elements T to dissipate heat generated by the N power electronic elements T, while the number of circuits constituted by an inductive charge bleeding circuit, such as a resistor R and a capacitor C in fig. 12, is one, and the resistor R is connected between the midpoint N of the series of the N power electronic elements T and the heat sink H to bleed the inductive charge on the heat sinks H.
As shown in fig. 12, n power electronic elements T 1…Tj、Tj+1…Tn are connected in series. Wherein the midpoint N is defined as follows:
if N is an even number, the midpoint N is the connection point of the N/2 th power electronic element T and the N/2+1 th power electronic element T. That is, the value of j in FIG. 12 is n/2.
If N is an odd number, the midpoint N is the connection point of the (N-1)/2 th power electronic element T and the (n+1)/2 th power electronic element T. That is, the value of j in FIG. 12 is (n-1)/2.
Or if N is an odd number, the midpoint N is the connection point of the (n+1)/2 th power electronic element T and the (n+3)/2 nd power electronic element T, that is, the value of j in fig. 12 is (n+1)/2.
Although the circuit constituted by the resistor R and the capacitor C is used as the induced charge discharging circuit in fig. 12, the capacitor C may not be included.
In addition, the power electronic components T shown in fig. 11 are connected in series by the connection copper bars L, and the connection copper bars L are not related to the present application, so that the description thereof will not be repeated.
Corresponding to the anti-interference power electronic component, the application also provides a method for fixing the radiator potential of the power electronic element of the anti-interference power electronic component.
Fig. 13 is a flow chart of one embodiment of a method for fixing the heat sink potential of the power electronic component of the tamper resistant power electronic assembly described above. As shown in fig. 13, the method for fixing the radiator potential of the power electronic element of the above-mentioned anti-interference power electronic component of the present embodiment includes: step 100 provides a charge-induced bleeder circuit 20, the charge-induced bleeder circuit 20 comprising at least one resistor R electrically connected between the conductive region 1 and the heat sink 4 for bleeding the charge induced on the heat sink 4.
Fig. 14 is a flowchart of still another embodiment of a method for fixing the heat sink potential of the power electronic component of the above-described tamper-resistant power electronic assembly. As shown in fig. 14, the method for fixing the radiator potential of the power electronic element of the above-mentioned anti-interference power electronic component of the present embodiment includes: step 100', wherein step 100' is based on step 100, and a capacitor C is provided in the inductive charge bleeder circuit 21, connected in parallel across the resistor R.
As an embodiment of the method for fixing a radiator potential of a power electronic element of the above-mentioned anti-interference power electronic component of the present application, the above-mentioned radiator includes a metal radiator fin.
As an embodiment of the method for fixing the potential of the heat sink of the power electronic element for the anti-interference power electronic component of the present application, the heat sink is in direct contact with the heat dissipating substrate.
As an embodiment of the method for fixing the radiator potential of the power electronic element of the anti-interference power electronic component of the present application, the power electronic element is a switching element.
As an embodiment of the fixing method of the radiator potential of the power electronic element for the above-described tamper-resistant power electronic component of the present application, the above-described switching element is any one of an insulated gate bipolar transistor, a metal oxide semiconductor field effect transistor, and a gate turn-off thyristor.
As an embodiment of the fixing method of the radiator potential of the power electronic element for the above-mentioned anti-interference power electronic component of the present application, the above-mentioned conductive region is any one of an emitter and a collector of an insulated gate bipolar transistor, a source and a drain of a metal oxide semiconductor field effect transistor, and a cathode and an anode of a gate turn-off thyristor.
Fig. 15 is a flowchart of still another embodiment of a method for fixing the heat sink potential of the power electronic component of the above-described tamper-resistant power electronic assembly. As shown in fig. 15, the method for fixing the radiator potential of the power electronic element of the above-mentioned anti-interference power electronic component of the present embodiment includes: step 100", wherein step 100" is based on step 100, and the number of power electronic components T is more than one and is connected in series, the number of heat sinks H is more than one and is the same as the number of power electronic components T, the heat sinks H are attached to the heat dissipation substrate of the corresponding power electronic components T to dissipate the heat generated by the corresponding power electronic components T, and the number of induced charge bleeder circuits 20 is more than one and is the same as the number of power electronic components T, and the resistors R are correspondingly electrically connected between the conductive regions of the power electronic components T and the heat sinks H to bleed the induced charges on the corresponding heat sinks H.
Although the circuit of fig. 15 is formed by a resistor R as the induced charge discharging circuit, the induced charge discharging circuit may also include a capacitor C connected in parallel across R.
Fig. 16 is a flowchart of still another embodiment of a method for fixing a floating potential of a heat sink for a power electronic component of the above-described tamper-resistant power electronic assembly. As shown in fig. 16, the method for fixing the radiator potential of the power electronic element of the above-mentioned anti-interference power electronic component of the present embodiment includes: step 100 '", wherein step 100'" is based on step 100 and the number of power electronic components T is N and is connected in series, the number of heat sinks H is one, the heat sinks H are attached to the respective heat dissipation substrates of the power electronic components T to dissipate heat generated by the power electronic components T, and the number of induced charge bleeding circuits is one, and the resistor R is electrically connected between the midpoint N of the series of N power electronic components T and the heat sink H to bleed the induced charge on the heat sinks H.
Referring to fig. 12, in step 100' "of the method for fixing the radiator potential of the power electronic element of the anti-interference power electronic component shown in fig. 16, n power electronic elements T 1…Tj、Tj+1…Tn are connected in series. Wherein the midpoint N is defined as follows:
if N is an even number, the midpoint N is the connection point of the N/2 th power electronic element T and the N/2+1 th power electronic element T. That is, the value of j in FIG. 12 is n/2.
If N is an odd number, the midpoint N is the connection point of the (N-1)/2 th power electronic element T and the (n+1)/2 th power electronic element T. That is, the value of j in FIG. 12 is (n-1)/2.
Or if N is an odd number, the midpoint N is the connection point of the (n+1)/2 th power electronic element T and the (n+3)/2 nd power electronic element T, that is, the value of j in fig. 12 is (n+1)/2.
Although the circuit of fig. 16 is formed by a resistor R as the induced charge discharging circuit, the induced charge discharging circuit may also include a capacitor C connected in parallel across R.
According to the anti-interference power electronic component and the method for fixing the potential of the radiator for the anti-interference power electronic component, the potential of each power electronic component can be ensured to be the same as or close to the potential of the radiator for radiating the power electronic component, so that the insulation breakdown of the power electronic component can be prevented, the electromagnetic interference to a driving circuit is avoided, and meanwhile, the volume and the complexity of a system are not additionally increased.
The present disclosure has been described with respect to the above-described embodiments, however, the above-described embodiments are merely examples of implementation of the present disclosure. It must be noted that the disclosed embodiments do not limit the scope of the present disclosure. On the contrary, the intent is to cover all modifications and alternatives falling within the spirit and scope of the disclosure.
Claims (10)
1. A power switch assembly, comprising:
A switching string configured to form a first phase leg with another switch in the medium voltage converter, the switching string comprising a plurality of switching elements, wherein the plurality of switching elements are connected into the switching string in the following manner: the plurality of switching elements are configured to operate in a manner of being simultaneously turned on and simultaneously turned off;
A metal heat sink attached to the switch string to dissipate heat generated by the switch string during the operation; and
An impedance network, wherein two ends of the impedance network are electrically connected between a common connection point of any two adjacent switching elements in the switching string and the metal heat sink; wherein the method comprises the steps of
The impedance network is a resistor and a capacitor connected in parallel.
2. The power switch assembly of claim 1, wherein the impedance network is electrically connected between a midpoint of the switch string and the metal heat sink, the midpoint being defined as follows:
the number of switching elements is set to n,
If n is even, the midpoint is the common connection point of the n/2 th switching element and the n/2+1 th switching element, and
If n is an odd number, the midpoint is a common connection point of the (n-1)/2 th switching element and the (n+1)/2 th switching element, or is a common connection point of the (n+1)/2 th switching element and the (n+3)/2 th switching element.
3. A power switch assembly according to claim 1 or 2, wherein in said operation the potential on the metal heat sink is an alternating potential, the same as or close to the potential of the common connection point of the switching elements.
4. The power switch assembly according to claim 1 or 2, wherein the switching element is any one of an insulated gate bipolar transistor, a metal oxide semiconductor field effect transistor and a gate turn-off thyristor.
5. The power switch assembly according to claim 4, wherein the common connection point of the switching element is any one of an emitter and a collector of the insulated gate bipolar transistor, a source and a drain of the metal oxide semiconductor field effect transistor, and a cathode and an anode of the gate-off thyristor.
6. A method of fixing a heat sink potential for a power switch assembly, wherein the power switch assembly comprises: a switching string configured to form a first phase leg with another switch in the medium voltage converter, the switching string comprising a plurality of switching elements, wherein the plurality of switching elements are connected into the switching string in the following manner: the plurality of switching elements are configured to operate in a manner of being simultaneously turned on and simultaneously turned off; and a metal heat sink attached to the switch string for dissipating heat generated by the switch string during the operation, the method comprising:
Providing an impedance network, wherein two ends of the impedance network are electrically connected between a common connection point of any two adjacent switching elements in the switching string and the metal radiator; wherein the method comprises the steps of
The impedance network is a resistor and a capacitor connected in parallel.
7. The method of fixing a heat sink potential for a power switch assembly of claim 6, wherein the impedance network is electrically connected between a midpoint of the switch string and the metal heat sink, the midpoint being defined as follows:
the number of switching elements is set to n,
If n is even, the midpoint is the common connection point of the n/2 th switching element and the n/2+1 th switching element, and
If n is an odd number, the midpoint is a common connection point of the (n-1)/2 th switching element and the (n+1)/2 th switching element, or is a common connection point of the (n+1)/2 th switching element and the (n+3)/2 th switching element.
8. A method of fixing the potential of a heat sink for a power switch assembly according to claim 6 or 7, wherein in the operation the potential on the metal heat sink is an alternating potential, the same as or close to the potential of the common connection point of the switching elements.
9. The fixing method of a radiator potential for a power switch assembly according to claim 6 or 7, wherein the switching element is any one of an insulated gate bipolar transistor, a metal oxide semiconductor field effect transistor, and a gate turn-off thyristor.
10. The fixing method for the radiator potential of the power switch assembly according to claim 9, wherein the common connection point of the switching element is any one of an emitter and a collector of the insulated gate bipolar transistor, a source and a drain of the metal oxide semiconductor field effect transistor, and a cathode and an anode of the gate-off thyristor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110653610.1A CN113394181B (en) | 2016-12-20 | 2016-12-20 | Power switch assembly and method for fixing radiator potential thereof |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110653610.1A CN113394181B (en) | 2016-12-20 | 2016-12-20 | Power switch assembly and method for fixing radiator potential thereof |
| CN201611187787.2A CN108206165A (en) | 2016-12-20 | 2016-12-20 | The fixing means of anti-interference power electronic building brick and its radiator current potential |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611187787.2A Division CN108206165A (en) | 2016-12-20 | 2016-12-20 | The fixing means of anti-interference power electronic building brick and its radiator current potential |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113394181A CN113394181A (en) | 2021-09-14 |
| CN113394181B true CN113394181B (en) | 2024-08-13 |
Family
ID=62604254
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611187787.2A Pending CN108206165A (en) | 2016-12-20 | 2016-12-20 | The fixing means of anti-interference power electronic building brick and its radiator current potential |
| CN202110653610.1A Active CN113394181B (en) | 2016-12-20 | 2016-12-20 | Power switch assembly and method for fixing radiator potential thereof |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611187787.2A Pending CN108206165A (en) | 2016-12-20 | 2016-12-20 | The fixing means of anti-interference power electronic building brick and its radiator current potential |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN108206165A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3690934A1 (en) * | 2019-02-04 | 2020-08-05 | Siemens Aktiengesellschaft | Cooling of an electronic component by forced convection and method for heating an electronic assembly |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102771040A (en) * | 2010-02-04 | 2012-11-07 | 康派克特动力有限公司 | Electronic subassembly for switching electric power |
| CN203482479U (en) * | 2013-04-22 | 2014-03-12 | 无锡艾柯威科技有限公司 | Electrostatic leakage circuit of static electricity generation body |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4027969C1 (en) * | 1990-09-04 | 1991-11-07 | Mgv Margret Gruber Vertrieb Gmbh, 8000 Muenchen, De | Converter with controlled transistor bridge - has connecting choke divided into main and auxiliary chokes in diagonal branch of bridge |
| DE102008047028B4 (en) * | 2008-09-13 | 2011-06-09 | Infineon Technologies Ag | Circuit arrangement for controlling a power semiconductor switch and semiconductor module |
| JP6279898B2 (en) * | 2013-12-26 | 2018-02-14 | 株式会社東芝 | Switching control device |
| US9966946B2 (en) * | 2014-04-02 | 2018-05-08 | Infineon Technologies Ag | System and method for a driving a radio frequency switch |
-
2016
- 2016-12-20 CN CN201611187787.2A patent/CN108206165A/en active Pending
- 2016-12-20 CN CN202110653610.1A patent/CN113394181B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102771040A (en) * | 2010-02-04 | 2012-11-07 | 康派克特动力有限公司 | Electronic subassembly for switching electric power |
| CN203482479U (en) * | 2013-04-22 | 2014-03-12 | 无锡艾柯威科技有限公司 | Electrostatic leakage circuit of static electricity generation body |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108206165A (en) | 2018-06-26 |
| CN113394181A (en) | 2021-09-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10134718B2 (en) | Power semiconductor module | |
| JP6230946B2 (en) | Power conversion device and railway vehicle equipped with the same | |
| US9742312B2 (en) | Apparatus and electrical assembly for converting a direct voltage into an alternating voltage | |
| JP3652934B2 (en) | Power converter | |
| US11823971B2 (en) | Power electronics system | |
| TW201521180A (en) | Semiconductor device | |
| JP2011067045A (en) | Inverter device | |
| EP4106175A1 (en) | Motor controller and vehicle | |
| US10032732B1 (en) | Semiconductor module arrangement | |
| CN107710580B (en) | Circuit arrangement for fast switching of a converter | |
| CN113394181B (en) | Power switch assembly and method for fixing radiator potential thereof | |
| JP2010259139A (en) | Insulating bus bar and power converter using the same | |
| US9950898B2 (en) | Semiconductor device, inverter circuit, driving device, vehicle, and elevator | |
| WO2017199580A1 (en) | Insulated gate semiconductor device and method for manufacturing insulated gate semiconductor device | |
| JP2018181919A (en) | Semiconductor device and power conversion device | |
| JP2017005808A (en) | Power conversion device | |
| CN110581534B (en) | Temperature protection circuit | |
| JP2013045882A (en) | Semiconductor device | |
| US10218257B2 (en) | Power converter having parallel-connected semiconductor switches | |
| KR100485102B1 (en) | Inverter stack having multi-layer bus plate | |
| CN110506384B (en) | Low inductance half-bridge power module | |
| JP4364169B2 (en) | FET module and induction heating inverter | |
| CN106057744A (en) | Semiconductor module | |
| JP2006271131A (en) | Power converter | |
| CN217159670U (en) | Half-bridge circuit and switch layout structure thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |