CN221127134U - Half-bridge power unit, full-bridge power unit, electronic equipment and vehicle - Google Patents

Abstract

The application discloses a half-bridge power unit, a full-bridge power unit, electronic equipment and a vehicle, and relates to the technical field of semiconductors. The half-bridge power unit includes: alternating current output electrode busbar; each half-bridge power subunit is arranged on the first surface of the alternating current output electrode busbar, and at least comprises a first semiconductor power device and a second semiconductor power device; the source power terminal and the drain power terminal of the first semiconductor power device are respectively positioned on different side surfaces in the first direction; the source power terminal and the drain power terminal of the second semiconductor power device are respectively positioned on different side surfaces in the first direction; the source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device are commonly connected to the first surface side of the alternating current output electrode busbar. The half-bridge power unit reduces electromagnetic interference generated by the alternating current output electrode busbar.

Description

Half-bridge power unit, full-bridge power unit, electronic equipment and vehicle

Technical Field

The present application relates to the field of semiconductor technologies, and in particular, to a half-bridge power unit, a full-bridge power unit, an electronic device, and a vehicle.

Background

The power semiconductor device is a core device in the power electronic conversion device, the power electronic realizes electric energy conversion by means of the on and off of the power semiconductor device under different circuit topologies, for example, the electric drive of the electric automobile realizes DC/AC conversion of voltage through the power module, so that the direct current of the power battery can be used for driving the alternating current motor. At present, an alternating current output electrode busbar in a power module is easy to generate electromagnetic interference (Electromagnetic Interference, EMI) to the outside, so that the normal operation of other devices is influenced.

Disclosure of utility model

It is an object of the present application to provide a new half-bridge power unit, full-bridge power unit, electronic device and vehicle.

According to a first aspect of the present application, there is provided a half-bridge power unit comprising:

An ac output pole busbar having a first surface;

Each half-bridge power subunit is arranged on the first surface side of the alternating current output electrode busbar, and each half-bridge power subunit at least comprises a first semiconductor power device and a second semiconductor power device;

The source power terminal and the drain power terminal of the first semiconductor power device are respectively positioned on different side surfaces in the first direction; the source power terminal and the drain power terminal of the second semiconductor power device are respectively positioned on different side surfaces in the first direction;

And the source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device are commonly connected to the first surface side of the alternating current output electrode busbar.

Optionally, the first semiconductor power device and the second semiconductor power device are arranged side by side along a first direction, and a source power terminal of the first semiconductor power device is opposite to a drain power terminal of the second semiconductor power device; the first direction is a direction in which a drain power terminal of the first semiconductor power device points to a source power terminal.

Optionally, the half-bridge power unit further comprises:

And the drain power terminal of the first semiconductor power device is electrically connected with the direct current positive busbar.

Optionally, the half-bridge power unit further comprises:

And the source power terminal of the second semiconductor power device is electrically connected with the direct current negative electrode busbar.

Optionally, the direct current positive electrode busbar and the direct current negative electrode busbar are located on the second surface side of the alternating current output electrode busbar, and the first surface of the alternating current output electrode busbar and the second surface of the alternating current output electrode busbar are two opposite surfaces of the alternating current output electrode busbar.

Optionally, the direct current positive electrode busbar, the direct current negative electrode busbar and the alternating current output electrode busbar are arranged at intervals and in parallel in a second direction, the second direction is a direction in which the half-bridge power subunit points to the alternating current output electrode busbar, and the second direction is perpendicular to the first direction.

Optionally, the direct current positive electrode busbar is located between the direct current negative electrode busbar and the alternating current output electrode busbar;

Or the direct current negative electrode busbar is positioned between the direct current positive electrode busbar and the alternating current output electrode busbar.

Optionally, the ac output electrode busbar leads out a third external connection terminal in a third direction, the third direction is perpendicular to the first direction and the second direction, and the third external connection terminal is used for connecting an external load.

Optionally, the drain power terminal of the first semiconductor power device is connected to the dc positive busbar, and the dc positive busbar leads out the first external terminal in the third direction.

Optionally, the source power terminal of the second semiconductor power device is connected to the dc negative busbar, and the dc negative busbar leads out a second external terminal in a third direction.

Optionally, the first external terminal and the second external terminal are disposed on a first side of the third direction.

Optionally, the third external connection terminal is disposed on a second side of the third direction.

Optionally, the half-bridge power cell comprises a capacitor,

The first end of the capacitor is electrically connected with the first external terminal, and the second end of the capacitor is electrically connected with the second external terminal.

Optionally, a first insulating layer is arranged between the alternating current output electrode busbar and the direct current negative electrode busbar, and a second insulating layer is arranged between the direct current positive electrode busbar and the direct current negative electrode busbar;

Or a first insulating layer is arranged between the direct current negative electrode busbar and the direct current positive electrode busbar, and a second insulating layer is arranged between the direct current positive electrode busbar and the alternating current output electrode busbar.

Optionally, the first semiconductor power device further includes a first gate driving terminal, the first gate driving terminal is disposed at a side edge of the first direction, and the first gate driving terminal extends and is led out along the second direction.

Optionally, the second semiconductor power device further includes a second gate driving terminal, where the second gate driving terminal is disposed at a side edge of the first direction, and the second gate driving terminal extends and is led out along the second direction.

Optionally, the direct current positive electrode busbar, the direct current negative electrode busbar and the alternating current output electrode busbar are provided with first holes, and the first gate driving terminal of the first semiconductor power device is led out through the first holes.

Optionally, the first semiconductor power device further includes a first source driving terminal, the first source driving terminal is disposed adjacent to the first gate driving terminal, and the first source driving terminal is led out from the first opening.

Optionally, the direct current positive electrode busbar, the direct current negative electrode busbar and the alternating current output electrode busbar are provided with second openings, and the second gate driving terminal of the second semiconductor power device is led out through the second openings.

Optionally, the second semiconductor power device further includes a second source driving terminal, the second source driving terminal is disposed adjacent to the second gate driving terminal, and the second source driving terminal is led out from the second opening.

Optionally, at least any one of the direct current positive electrode busbar, the direct current negative electrode busbar and the alternating current output electrode busbar covers the at least one half-bridge power subunit.

Optionally, the half-bridge power unit includes at least two half-bridge power subunits, and the at least two half-bridge power subunits are arranged side by side along a third direction, where the third direction is perpendicular to the first direction in a plane of the first surface of the ac output busbar.

Optionally, the drain power terminal of the first semiconductor power device and the dc positive busbar, the source power terminal of the second semiconductor power device and the dc negative busbar, and the source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device and the ac output busbar are respectively formed into electrical connection by laser welding.

Optionally, the first semiconductor power device includes a body, and the drain power terminal of the first semiconductor power device includes a protruding structure, where the protruding structure is located between a connection location and the body, and the connection location is a connection location between the dc positive busbar and the source power terminal of the first semiconductor power device.

Optionally, the ac output electrode busbar is provided with a groove, and a source power terminal of the first semiconductor power device and a drain power terminal of the second semiconductor power device are connected to an outer bottom of the groove.

According to a second aspect of the present application there is provided a full bridge power unit comprising at least two half bridge power units as described in the first aspect.

Optionally, at least two of the half-bridge power cells are arranged side by side along the first direction.

Optionally, the full-bridge power unit further comprises a drive plate at least partially covering the half-bridge power unit.

Optionally, the full-bridge power unit includes three half-bridge power units, and the driving board is arranged above the three half-bridge power units in a covering manner.

Optionally, the first semiconductor power device further includes a first gate driving terminal, and the first gate driving terminal is electrically connected to the driving board.

Optionally, the second semiconductor power device further includes a second gate driving terminal, and the second gate driving terminal is electrically connected to the driving board.

Optionally, the full-bridge power unit further includes a heat dissipation substrate, and the half-bridge power unit is disposed on the heat dissipation substrate.

Optionally, the first semiconductor power device includes a first heat conductive layer on a lower surface; the second semiconductor power device comprises a second heat conduction layer positioned on the lower surface;

the first heat conduction layer and the second heat conduction layer are welded or sintered with the heat dissipation substrate.

Optionally, bosses corresponding to the first semiconductor power devices and the second semiconductor power devices one by one are arranged on the heat dissipation substrate;

The first heat conduction layer and the second heat conduction layer are respectively welded or sintered with corresponding bosses on the heat dissipation substrate.

According to a third aspect of the present application there is provided an electronic device comprising a half-bridge power unit as claimed in any of the first aspects or a full-bridge power unit as claimed in any of the second aspects.

According to a fourth aspect of the present application there is provided a vehicle comprising an electronic device as described in the third aspect.

The embodiment of the application provides a half-bridge power unit, which comprises: an alternating current output electrode busbar, wherein the alternating current output electrode busbar is provided with a first surface; each half-bridge power subunit is arranged on the first surface side of the alternating current output electrode busbar, and at least comprises a first semiconductor power device and a second semiconductor power device; the source power terminal and the drain power terminal of the first semiconductor power device are respectively positioned on different side surfaces in the first direction; the source power terminal and the drain power terminal of the second semiconductor power device are respectively positioned on different side surfaces in the first direction; the source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device are commonly connected to the first surface side of the alternating current output electrode busbar. In the embodiment of the application, the source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device are connected to the first surface of the alternating current output electrode busbar, so that the midpoint of a half bridge formed by connecting the source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device is led out from the alternating current output electrode busbar. Because the alternating current output electrode busbar is close to the half-bridge power subunit, the distance between the alternating current output electrode busbar and other devices is increased, and electromagnetic interference generated by the alternating current output electrode busbar is reduced.

Other features of the present application and its advantages will become apparent from the following detailed description of exemplary embodiments of the application, which proceeds with reference to the accompanying drawings.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description, serve to explain the principles of the application.

FIG. 1 is a schematic cross-sectional view of a half-bridge power cell provided by an embodiment of the present application;

Fig. 2a is a schematic structural diagram of a first semiconductor power device according to an embodiment of the present application;

fig. 2b is a schematic bottom view of a first semiconductor power device according to an embodiment of the present application;

fig. 3a is an equivalent circuit schematic diagram of one half-bridge power subunit in the half-bridge power unit according to the embodiment of the present application;

FIG. 3b is a schematic diagram of an equivalent circuit of a half-bridge power cell according to an embodiment of the present application;

Fig. 4 is a schematic diagram of a half-bridge power unit according to an embodiment of the present application;

fig. 5 is a schematic diagram of a half-bridge power unit according to a second embodiment of the present application;

FIG. 6 is a schematic diagram of an arrangement of half-bridge power subunits according to an embodiment of the present application;

fig. 7 is a schematic diagram III of a half-bridge power unit according to an embodiment of the present application;

fig. 8 is a schematic diagram of a full-bridge power unit according to an embodiment of the present application;

Fig. 9 is a schematic structural diagram of a heat dissipating substrate according to an embodiment of the present application;

Fig. 10 is a schematic diagram of a full-bridge power unit according to a second embodiment of the present application;

FIG. 11 is a schematic diagram illustrating simulation of electric field lines of a full-bridge power unit according to an embodiment of the present application;

fig. 12 is a schematic diagram of temperature simulation of a full-bridge power unit according to an embodiment of the present application.

Reference numerals:

211-a first semiconductor power device; 11-a drain power terminal of the first semiconductor power device; 12-a source power terminal of a first semiconductor power device; 13-a first gate drive terminal of a first semiconductor power device; 14-a first source drive terminal of a first semiconductor power device; 15-a first thermally conductive layer; 16-body;

212-a second semiconductor power device; a drain power terminal of the second semiconductor power device; 22-a source power terminal of the second semiconductor power device; 23-a second gate drive terminal of a second semiconductor power device; 24-a second source drive terminal of a second semiconductor power device;

21-1-half-bridge power subunit one; a second 21-2-half-bridge power subunit; a 21-3-half bridge power subunit III; a 21-4-half bridge power subunit IV;

31-direct current positive electrode busbar; 311-a first external terminal;

32-direct current negative electrode busbar; 321-a second external terminal;

33-alternating current output electrode busbar; 331-a third external terminal; 332-grooves;

1-capacitance; 4-a first insulating layer; 5-a second insulating layer; 10-third insulating side

6-A heat dissipation substrate; 61-boss; 62-a heat-dissipating column;

7-a drive plate; 8-a first opening; 9-a bump structure;

A 51-U phase half-bridge power cell; a 52-V phase half-bridge power cell; 53-W phase half-bridge power cells;

Detailed Description

Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present application unless it is specifically stated otherwise.

The following description of at least one exemplary embodiment is merely exemplary in nature and is in no way intended to limit the application, its application, or uses.

Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but are intended to be part of the specification where appropriate.

In all examples shown and discussed herein, any specific values should be construed as merely illustrative, and not a limitation. Thus, other examples of exemplary embodiments may have different values.

It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further discussion thereof is necessary in subsequent figures.

An embodiment of the present application provides a half-bridge power unit, as shown in fig. 1, including:

An ac output pole busbar 33, the ac output pole busbar 33 having a first surface;

At least one half-bridge power subunit, each half-bridge power subunit being disposed on the first surface side of the ac output electrode busbar 33, each half-bridge power subunit at least including a first semiconductor power device 211 and a second semiconductor power device 212;

the source power terminal 12 and the drain power terminal 11 of the first semiconductor power device 211 are respectively located on different side surfaces in the first direction; the source power terminal 22 and the drain power terminal 21 of the second semiconductor power device 212 are respectively located on different side surfaces in the first direction;

The source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 are commonly connected to the first surface side of the ac output electrode busbar 33.

It should be noted that, in the embodiment of the present application, the number of semiconductor power subunits included in the semiconductor power unit is not limited. And fig. 1 illustrates an example in which the first direction, specifically, the direction in which the drain power terminal 11 of the first semiconductor power device 211 points to the source power terminal 12. As shown in fig. 2a, the source power terminal 12 and the drain power terminal 11 being located on different side surfaces in the first direction respectively means that the semiconductor power device 211 has two opposite side surfaces in the first direction, and the source power terminal (12) and the drain power terminal (11) are disposed on the two side surfaces respectively.

In one embodiment of the present application, the ac output busbar 33 is typically copper material. Corresponding connection terminals are provided on the ac output busbar 33 to connect the source power terminal 12 of the first semiconductor power device 211 with the drain power terminal 21 of the second semiconductor power device 212. The ac output electrode busbar 33 includes a first surface and a second surface, and the first surface and the second surface of the ac output electrode busbar 33 are specifically upper and lower surfaces opposite to each other of the ac output electrode busbar 33.

The first semiconductor power device 211 and the second semiconductor power device 212 are generally semiconductor power devices of the same specification.

In one example, the first semiconductor power device 211 may be a SiC single tube inside which a plurality of SiC chips may be packaged. Also, the external structure of the first semiconductor power device 211 may include, as shown in fig. 2a and 2 b: a drain power terminal 11, a source power terminal 12, a first source drive terminal 14, and a first gate drive terminal 13. The drain power terminal 11, the source power terminal 12, the first source driving terminal 14, and the first gate driving terminal 13 are typically made of copper.

And, as shown in fig. 2b, the first semiconductor power device 211 is seen from the bottom, and the bottom of the first semiconductor power device 211 is typically further provided with a first heat conductive layer 15. The first heat conductive layer 15 is usually made of copper, and is insulated from the inside of the first semiconductor power device 211 by a ceramic layer, so as to have an excellent heat conductive effect.

Further, the manner in which the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 are connected to the first surface side of the ac output electrode busbar 33 may be specifically: as shown in fig. 1, the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 are connected to form a half-bridge midpoint of the half-bridge power subunit. On this basis, the half-bridge midpoint is connected to the first surface of the ac output busbar 33.

Further, in one embodiment of the present application, as shown in fig. 1, the ac output busbar 33 is provided with a groove 332, and the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 221 are connected to the outer bottom of the groove 332.

In the embodiment of the present application, the groove 332 provided on the ac output electrode busbar 33 can increase the contact area between the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 and the ac output electrode busbar 33, so as to facilitate the connection between the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 and the ac output electrode busbar 33.

In addition, in one embodiment of the present application, the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 11 of the first semiconductor power device 211 are identical in structure. Based on this, when the first semiconductor power device 211 and the second semiconductor power device 212 have the same specification, the heights of the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 are the same. Accordingly, the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 are flush. In this way, the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 may be directly laser welded or sintered.

In the embodiment of the present application, the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 are connected to the first surface side of the ac output electrode busbar 33, so that the midpoint of the half bridge is led out from the ac output electrode busbar 33. Since the ac output electrode busbar 33 is disposed close to at least one half-bridge power subunit, other busbars of the half-bridge power unit, such as the dc positive electrode busbar 31 connected to the drain power terminal 11 of the first semiconductor power device 211 and the dc negative electrode busbar 32 connected to the source power terminal 22 of the second semiconductor power device 212, may form a shielding layer, thereby suppressing electromagnetic interference generated by the ac output electrode busbar 33. And, no holes are needed to be arranged on other bus bars for the AC output electrode bus bar 33 to lead out the midpoint of the half bridge. This reduces the difficulty and complexity of the processing of the half-bridge power cells. In addition, because the AC output electrode busbar is close to the half-bridge power subunit, the distance between the AC output electrode busbar and other devices can be increased, and electromagnetic interference generated by the AC output electrode busbar is further reduced.

The embodiment of the application provides a half-bridge power unit, which comprises: an alternating current output electrode busbar, wherein the alternating current output electrode busbar is provided with a first surface; each half-bridge power subunit is arranged on the first surface side of the alternating current output electrode busbar, and at least comprises a first semiconductor power device and a second semiconductor power device; the source power terminal and the drain power terminal of the first semiconductor power device are respectively positioned on different side surfaces in the first direction; the source power terminal and the drain power terminal of the second semiconductor power device are respectively positioned on different side surfaces in the first direction; the source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device are commonly connected to the first surface side of the alternating current output electrode busbar. In the embodiment of the application, the source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device are connected to the first surface of the alternating current output electrode busbar, so that the midpoint of a half bridge formed by connecting the source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device is led out from the alternating current output electrode busbar. Because the alternating current output electrode busbar is close to the half-bridge power subunit, the distance between the alternating current output electrode busbar and other devices is increased, and electromagnetic interference generated by the alternating current output electrode busbar is reduced.

In one embodiment of the present application, as shown in fig. 1, the first semiconductor power device 211 and the second semiconductor power device 212 are arranged side by side along the first direction, and the source power terminal 12 of the first semiconductor power device 211 is disposed opposite to the drain power terminal 21 of the second semiconductor power device 211; the first direction is a direction in which the drain power terminal 11 of the first semiconductor power device 211 points toward the source power terminal 12.

In the embodiment of the present application, the first direction is the direction in which the drain power terminal 11 of the first semiconductor power device 211 points to the source power terminal 12, the source power terminal 12 and the drain power terminal 11 of the first semiconductor power device 211 are respectively located at different sides of the first direction, the source power terminal 22 and the drain power terminal 21 of the second semiconductor power device 212 are respectively located at different sides of the first direction, and the first semiconductor power device 211 and the second semiconductor power device 212 are arranged side by side along the first direction, so, as shown in fig. 1, the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 can be arranged at a close distance, and the first semiconductor power device 211 and the second semiconductor power device 212 can form a linear arrangement. Therefore, the half-bridge power unit provided by the embodiment of the application has a regular structure, and is convenient to process.

In one embodiment of the present application, as shown in fig. 1, the half-bridge power unit provided in the embodiment of the present application further includes:

The dc positive busbar 31 is electrically connected to the drain power terminal 11 of the first semiconductor power device 211. The end of the dc positive busbar 31 may be provided with a bent portion for contacting the drain power terminal 11, and specifically, an electrical connection may be formed by laser welding.

In combination with the above embodiment, in one embodiment of the present application, as shown in fig. 1, the half-bridge power unit provided in the embodiment of the present application further includes:

The dc negative busbar 32, and the source power terminal 22 of the second semiconductor power device 212 is electrically connected to the dc negative busbar 32. The end of the dc negative busbar 32 may be provided with a bent portion, and the bent portion is used for electrically connecting with the source power terminal 22 of the second semiconductor power device 212, and specifically, the source power terminal 22 may be laser welded to form an electrical connection with the bent portion.

In combination with the above embodiment, in one embodiment of the present application, as shown in fig. 1, the dc positive busbar 31 and the dc negative busbar 32 are located on the second surface side of the ac output busbar 33, and the first surface side of the ac output busbar 33 and the second surface side of the ac output busbar are two opposite upper and lower surfaces opposite to each other of the ac output busbar 33.

And, in one embodiment of the present application, the dc positive electrode busbar 31, the dc negative electrode busbar 32 and the ac output electrode busbar 33 are arranged at intervals and in parallel in a second direction, where the half-bridge power subunit points to the ac output electrode busbar 33, and the second direction is perpendicular to the first direction.

In the embodiment of the present application, the positions of the dc positive busbar 31 and the dc negative busbar 32 are exchangeable. Not only is the following: the dc positive busbar 31 may be located between the dc negative busbar 32 and the ac output busbar 33; or the dc negative busbar 32 may be located between the dc positive busbar 31 and the ac output busbar 33. In the following embodiments, a dc positive electrode busbar 31 is illustrated as being located between a dc negative electrode busbar 32 and an ac output electrode busbar 33.

In an example, taking a semiconductor power device as an NMOS transistor as an example, an equivalent circuit diagram of one half-bridge power subunit in the half-bridge power unit provided in the embodiment of the present application is shown in fig. 3a, where an ac output electrode busbar is not shown. Wherein the dashed lines with arrows in fig. 3a are the current directions in the half-bridge power subunit.

On the basis of fig. 3a, taking an example that the half-bridge power unit includes 4 half-bridge power subunits, an equivalent circuit diagram of the half-bridge power unit is shown in fig. 3 b. The 4 half-bridge power subunits are respectively a first half-bridge power subunit 21-1, a second half-bridge power subunit 21-2, a third half-bridge power subunit 21-3 and a fourth half-bridge power subunit 21-4. The dashed line with the arrow pointing to the right in fig. 3b is the current direction on the dc positive busbar 31 and the dashed line with the arrow pointing to the left is the current direction on the dc negative busbar 32.

In the embodiment of the present application, as shown in fig. 3a, the current directions in the first semiconductor power device 211 and the second semiconductor device 212 are the top-to-bottom directions in fig. 3a, and the current directions in the dc positive bus 31 and the dc negative bus 32 are the bottom-to-top directions in fig. 3a, that is, the directions of the semiconductor power devices of the half bridge power subunit are opposite to the current directions in the dc positive bus 31 and the dc negative bus 32. Meanwhile, the two dc positive electrode bus bars 31 and the dc negative electrode bus bars 32 are adjacent. Therefore, the pitch between the dc positive electrode busbar 31 and the dc negative electrode busbar 32 is small. Based on this, the direct current positive electrode busbar 31 and the direct current negative electrode busbar 32 can realize a good mutual inductance cancellation effect, thereby reducing parasitic inductance.

Meanwhile, as shown in fig. 3b, the directions of the current in the direct current positive electrode busbar 31 and the current in the direct current negative electrode busbar 32 are opposite, so that parasitic inductance introduced by the direct current positive electrode busbar 31 and the direct current negative electrode busbar 32 can be reduced, and the dynamic non-current equalizing effect of the half-bridge power unit in the switching process can be improved.

In one embodiment of the application, the dc positive busbar 31 is located between the dc negative busbar 32 and the ac output busbar 33.

Or the dc negative busbar 32 is located between the dc positive busbar 31 and the ac output busbar 33.

In the embodiment of the application, the positions of the direct current positive electrode busbar 31 and the direct current negative electrode busbar 32 can be exchanged, so that the setting flexibility of the half-bridge power unit provided by the embodiment of the application is high.

In one embodiment of the present application, the ac output busbar 33 leads out the third external terminal 331 in the third direction, and the third external terminal 331 is used for connecting to an external load. The third direction is perpendicular to the first direction and the second direction. Wherein the third direction, the second direction and the first direction form a space rectangular coordinate system.

In the embodiment of the present application, as shown in fig. 5 and 6, the ac output busbar 33 leads out the third external terminal 331 in the third direction, so as to connect the half-bridge midpoint of the two terminals to an external load through the ac output busbar 33. The third external terminal 331 is not in the same direction with the source power terminal and the drain power terminal of the semiconductor power device, and can be mutually perpendicular, so that external loads can be arranged on two sides of the half-bridge power unit in the third direction, and the structures of the half-bridge power unit and the full-bridge power unit are further optimized.

In one embodiment of the present application, the drain power terminal 11 of the first semiconductor power device 211 is connected to the dc positive busbar 31, and the dc positive busbar 31 leads out the first external connection terminal 311 in the third direction; the third direction is perpendicular to the first direction and the second direction.

In the embodiment of the present application, as shown in fig. 5, the dc positive busbar 31 leads out the first external terminal 311 in the third direction, so as to facilitate the connection of the external device to the drain power terminal 11 of the first semiconductor power device 211 connected to the dc positive busbar 31.

And, since the first external connection terminal 311 is led out from the dc positive busbar 31 in the third direction, and the drain power terminal 11 of the first semiconductor power device 211 connected to the dc positive busbar 31 is located in the first direction, the ends of the first external connection terminal 311 and the dc positive busbar 31, to which the drain power terminal 11 of the first semiconductor power device 211 is connected, are located on different sides.

In one embodiment of the present application, the source power terminal 16 of the second semiconductor power device 212 is connected to the dc negative busbar 32, and the dc negative busbar 32 leads out the second external terminal 321 in the third direction.

In the embodiment of the present application, as shown in fig. 5, the dc negative busbar 32 leads out the second external terminal 321 in the third direction, so as to facilitate the connection of the external device to the source power terminal 22 of the second semiconductor power device 212 connected to the dc negative busbar 32.

And, since the second external terminal 321 is led out from the dc negative busbar 32 in the third direction, and the source power terminal 22 of the second semiconductor power device 212 connected to the dc negative busbar 32 is located in the first direction, the ends of the second external terminal 321 and the dc negative busbar 32, to which the source power terminal 22 of the second semiconductor power device 212 is connected, are located on different sides.

In one embodiment of the present application, as shown in fig. 5, the first external terminal 311 and the second external terminal 312 are disposed at a first side in the third direction.

In the embodiment of the present application, since the first external terminal 311 and the second external terminal 312 are generally used for connecting the same device, the first external terminal 311 and the second external terminal 312 are disposed on the first side in the third direction, that is, the first external terminal 311 and the second external terminal 312 are disposed on the same side, so that the device for connecting the first external terminal 311 and the second external terminal 312 is convenient for connecting the half-bridge power unit provided in the embodiment of the present application.

In one embodiment of the present application, as shown in fig. 5, the third external connection terminal 331 is disposed at a second side of the third direction.

In the embodiment of the present application, the third external terminal 311 and the first external terminal 311 are located at opposite sides, and are used for connecting an external load, so that the capacitor and the external load are respectively disposed at two sides of the half-bridge power unit in the third direction. In this way, the size of the power semiconductor power cell can be optimized.

In one embodiment of the present application, as shown in fig. 6, a half-bridge power unit provided in the embodiment of the present application includes a capacitor 1, where:

The first end of the capacitor 1 is electrically connected to the first external terminal 311, and the second end of the capacitor 1 is electrically connected to the second external terminal 321.

In the embodiment of the present application, the relative positional relationship between the capacitor 1 and the half-bridge power unit is shown in fig. 6, and the electrical connection between the capacitor 1 and the second external terminal 321 and the first external terminal 311 are not shown. The first external terminal 311 and the second external terminal 321 are disposed on the same side in the third direction and are connected with the anode and the cathode of the capacitor respectively, in addition, the third external terminal 311 and the first external terminal 311 are located on opposite sides and are used for connecting external loads, so that the capacitor and the external loads are disposed on two sides of the half-bridge power unit in the third direction respectively, and the module structure is further optimized.

In the embodiment of the present application, the capacitor 1 is specifically a dc capacitor, and is used for filtering. Based on the above, the half-bridge power unit provided by the embodiment of the application can also realize a filtering effect.

In one embodiment of the present application, as shown in fig. 1, a first insulating layer 4 is disposed between the ac output electrode busbar 33 and the dc negative electrode busbar 32, and a second insulating layer 5 is disposed between the dc positive electrode busbar 31 and the dc negative electrode busbar 32;

Or a first insulating layer 4 is arranged between the direct current negative electrode busbar 32 and the direct current positive electrode busbar 31, and a second insulating layer 5 is arranged between the direct current positive electrode busbar 31 and the alternating current output electrode busbar 33.

In the embodiment of the present application, taking the example that the dc positive electrode busbar 31 is arranged between the dc negative electrode busbar 32 and the ac output electrode busbar 33 as shown in fig. 1, an insulating layer is arranged between the ac output electrode busbar 33 and the dc positive electrode busbar 31 and between the dc positive electrode busbar 31 and the dc negative electrode busbar 32. In this way, the occurrence of a short circuit between any two of the ac output electrode busbar 33, the dc positive electrode busbar 31, and the dc negative electrode busbar 32 can be avoided.

Further, in order to avoid a short circuit between the outer busbar of the dc positive busbar 31 and the outer busbar of the dc negative busbar 32 and other devices (for example, driving boards), the third insulating layer 10 may be further disposed on the side of the outer busbar of the dc positive busbar 31 and the outer busbar of the dc negative busbar 32, which is far from the ac output busbar 33. For example, in the case where the dc negative electrode busbar 32 is located at the outer layer as shown in fig. 1, the third insulating layer 10 may be provided on the side of the dc negative electrode busbar 32 remote from the ac output electrode busbar 33.

In one embodiment of the present application, as shown in fig. 2a and fig. 4, the first semiconductor power device 211 further includes a first gate driving terminal 13, where the first gate driving terminal 13 is disposed at a side of the first direction, and the first gate driving terminal 13 extends and exits along the second direction.

In the embodiment of the present application, the first semiconductor power device 211 further includes a first gate driving terminal 13 disposed at a side of the first direction. It is understood that the first gate driving terminal 13 may be located on the same side as the drain power terminal 11 of the first semiconductor power device 211, or may be located on the same side as the source power terminal 12 of the first semiconductor power device 211.

On the basis of the above embodiment, as shown in fig. 4, 5 or 7, the dc positive busbar 31, the dc negative busbar 32 and the ac output busbar 33 are provided with the first opening 8, and the first gate driving terminal 13 of the first semiconductor power device 211 is led out through the first opening 8.

In the embodiment of the application, the dc positive busbar 31, the dc negative busbar 32 and the ac output busbar 33 are provided with the first opening 8, and the first opening 8 can facilitate the external extraction of the first gate driving terminal 13.

The first semiconductor power device 211 further includes the first source driving terminal 14 on the basis of the above embodiment, the first source driving terminal 14 is disposed adjacent to the first gate driving terminal 13, and the first source driving terminal 14 is led out from the first opening 8.

In the embodiment of the present application, the first semiconductor power device 211 may further include a first source driving terminal 14, where the first source driving terminal 14 is disposed adjacent to the first gate driving terminal 13, and is led out from the outside through the first opening 8 together.

In an embodiment of the present application, the second semiconductor power device 212 further includes a second gate driving terminal 23, where the second gate driving terminal 23 is disposed at a side of the first direction, and the second gate driving terminal 23 extends along the second direction, as described above for the first gate driving terminal 13, the first source driving terminal 14, and the first opening 8 of the first semiconductor power device 211.

And, in one embodiment of the present application, the dc positive busbar 31, the dc negative busbar 32 and the ac output busbar 33 are provided with second openings, and the second gate driving terminal 23 of the second semiconductor power device 211 is led out through the second openings.

And, in one embodiment of the present application, the second semiconductor power device 211 further includes a second source driving terminal 24, the second source driving terminal 24 is disposed adjacent to the second gate driving terminal 23, and the second source driving terminal 24 is commonly led out from the second opening.

As shown in fig. 4 and 5, the second source driving terminal 24 and the second gate driving terminal 23 of the second semiconductor power device 212 may also be led out from the edges of the dc positive busbar 31, the dc negative busbar 32 and the ac output busbar 33 along the second direction. In this way, the second openings in the direct current positive electrode busbar 31, the direct current negative electrode busbar 32 and the alternating current output electrode busbar 33 can be avoided, so that the design of the half-bridge power unit provided by the embodiment of the application is facilitated, and the design difficulty of the half-bridge power unit provided by the embodiment of the application is reduced.

In one embodiment of the application, at least one half-bridge power subunit is covered by at least any one of the dc positive busbar 31, the dc negative busbar 32 and the ac output busbar 33.

As shown in fig. 1, 4 and 5, the dc positive electrode busbar 31, the dc negative electrode busbar 32 and the ac output electrode busbar 33 cover all the half-bridge power subunits.

In the embodiment of the application, the at least one half-bridge power subunit is covered by at least any one of the direct current positive electrode busbar 31, the direct current negative electrode busbar 32 and the alternating current output electrode busbar 33, so that the mutual interference between the half-bridge power subunit and an external device can be avoided.

In one embodiment of the present application, as shown in fig. 6, the half-bridge power unit includes at least two half-bridge power subunits, and the at least two half-bridge power subunits are disposed side by side along a third direction, where the third direction is perpendicular to the first direction in a plane of the first surface of the ac output busbar 33.

In the embodiment of the present application, for the half-bridge power unit shown in fig. 6, the equivalent schematic diagram is shown in fig. 3b, and each half-bridge power subunit in the half-bridge power unit is connected in series between the capacitors 1, so that the influence of the capacitors 1 on each half-bridge power subunit may not be identical.

In addition, as shown in fig. 6, the half-bridge power subunits in the half-bridge power unit are arranged side by side along the third direction, and the first semiconductor power device 211 and the second semiconductor power device 212 in the half-bridge power subunit are arranged along the first direction perpendicular to the third direction, so that the structure of the half-bridge power unit is more compact, i.e. the integration level is high.

In one embodiment of the present application, the drain power terminal 11 of the first semiconductor power device 211 and the dc positive busbar 31, the source power terminal 16 of the second semiconductor power device 212 and the dc negative busbar 32, and the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 15 of the second semiconductor power device 212 and the ac output busbar 33 are electrically connected by laser welding, respectively.

In the embodiment of the application, the drain power terminal 11 and the dc positive busbar 33 of the first semiconductor power device 211, the source power terminal 22 and the dc negative busbar 32 of the second semiconductor power device 212, the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 and the ac output busbar 33 of the second semiconductor power device 212 meet the requirement of laser welding, and laser welding can be adopted. The power semiconductor unit provided by the embodiment of the application has the advantages of high processing speed, high reliability of welding points, no contact resistance, local heating and the like.

In one embodiment of the present application, as shown in fig. 1 and 2a, the first semiconductor power device 211 includes a body 16, and the drain power terminal 11 of the first semiconductor power device 211 includes a bump structure 9, where the bump structure 9 is located between a connection location between the dc positive busbar 31 and the source power terminal 11 of the first semiconductor power device 211.

In the embodiment of the present application, the protruding structure 9 of the drain power terminal 11 of the first semiconductor power device 211 may also position and limit the connection position of the dc positive busbar 31 and the drain power terminal 11 of the first semiconductor power device 211.

Similarly, when the drain power terminal 21 of the second semiconductor power device 212 also includes the same bump structure 9, the drain power terminal 21 of the second semiconductor power device 212 may also implement positioning and limiting of the source power terminal 12 of the first semiconductor power device 211.

The embodiment of the application also provides a full-bridge power unit, which comprises the half-bridge power unit provided by any embodiment.

In an embodiment of the present application, taking the full-bridge power unit as a three-phase full-bridge power unit, and three half-bridge power units in the three-phase full-bridge power unit are respectively a U-phase half-bridge power unit 51, a V-phase half-bridge power unit 52 and a W-phase half-bridge power unit 53 as examples, a schematic structure of the full-bridge power unit may be shown in fig. 8.

In one embodiment of the present application, in the full-bridge power unit provided by the present application, at least two half-bridge power units are disposed side by side along the first direction.

In the embodiment of the application, as shown in fig. 8, at least two half-bridge power units are arranged side by side along the third direction, so that the full-bridge power unit has a moderate length-width ratio, and the structure of the full-bridge power unit is more compact.

In one embodiment of the present application, as shown in fig. 2b, the first semiconductor power device 211 includes a first heat conductive layer 15, and the first semiconductor power device 211 is located between the first heat conductive layer 15 and the ac output electrode busbar 33;

Correspondingly, the second semiconductor power device 212 includes a second heat conductive layer, and the second semiconductor power device 212 is located between the second heat conductive layer and the ac output electrode busbar 33.

In the embodiment of the present application, the bottom surface of the first semiconductor power device 211 includes the first heat conductive layer 15. Accordingly, by providing the first heat conductive layer 15 on the bottom surface, heat dissipation of the first semiconductor power device 211 can be facilitated, thereby improving the operation stability of the first semiconductor power device 211.

Similarly, the bottom surface of the second semiconductor power device 212 includes a second thermally conductive layer. Based on this, by providing the second heat conductive layer on the bottom surface, heat dissipation of the second semiconductor power device 212 can be facilitated, thereby improving the operation stability of the second semiconductor power device 212.

In one embodiment of the present application, as shown in fig. 8 and 9, the full-bridge power unit provided in the embodiment of the present application further includes a heat dissipation substrate 6, where:

The first heat conducting layer 19 and the second heat conducting layer in the full bridge power unit are welded or sintered with the heat dissipation substrate 6.

In an embodiment of the present application, the full bridge power unit further includes a heat dissipation substrate 6 as shown in fig. 8 and 9. The heat sink substrate 6 may provide mechanical support and heat dissipation for the full bridge power cell. Meanwhile, the heat dissipation substrate 6 may be made of a material having a thermal expansion coefficient Coefficient of Thermal ExpansionCTE matched with that of the first heat conduction layer 15 of the first semiconductor power device 211 and that of the second heat conduction layer of the second semiconductor power device 212.

In one embodiment of the present application, the heat dissipation substrate 6 is provided with the bosses 61 corresponding to the first semiconductor power devices 211 and the second semiconductor power devices 212 one by one;

The first and second heat conductive layers 19 and 61 are soldered to corresponding bosses on the heat dissipating substrate 6.

In the embodiment of the application, as shown in fig. 9, a boss 61 corresponding to the semiconductor power units one by one is processed on one side of the heat dissipation substrate 6 where the full-bridge power units are welded, so that the creepage distance between the terminals on the semiconductor power units and the heat dissipation substrate 6 can be ensured to meet the requirement, and meanwhile, the full-bridge power units can be conveniently installed and positioned.

Further, a heat dissipation column 62 may be disposed on a side of the heat dissipation substrate 6 away from the at least two half-bridge power units for liquid cooling.

In the embodiment of the present application, the heat conducting layer of each semiconductor power device in the half-bridge power unit is connected with the heat dissipating substrate boss 61 through the sintering process, so that the heat conducting performance and reliability of the heat dissipating substrate 6 can be improved.

In one embodiment of the present application, the full-bridge power unit provided by the embodiment of the present application further includes a driving board 7, where the driving board 7 at least partially covers the half-bridge power unit.

In one embodiment of the present application, as shown in fig. 10, the full-bridge power unit provided in the embodiment of the present application further includes a driving board 7, wherein:

The driving plate 7 is arranged in parallel with the dc positive electrode busbar 31, the dc negative electrode busbar 32 and the ac output electrode busbar 33 at intervals in the second direction, and the dc positive electrode busbar 31 and the dc negative electrode busbar 32 are located between the driving plate 7 and the ac output electrode busbar 33.

In the embodiment of the present application, as shown in fig. 10, the driving board 7 is disposed on the outermost layer of the busbar including the dc positive busbar 31, the dc negative busbar 32 and the ac output busbar 33, for driving the full-bridge power unit.

In the embodiment of the present application, the ac output electrode busbar 33, the dc positive electrode busbar 31, the dc negative electrode busbar 32 and the driving plate 7 are arranged in parallel at intervals along the second direction. The dc positive busbar 31 and the dc negative busbar 32 may form a shielding layer for shielding electromagnetic interference of the ac output busbar 33. Thus, the alternating current output electrode busbar 33 does not generate electromagnetic interference on the driving plate 7, so that the working stability of the full-bridge power unit is improved.

In one embodiment of the application, the drive plate 7 at least partially covers the half-bridge power cells.

In an embodiment of the application, the drive plate 7 at least partly covers the half-bridge power unit. Based on the above, the appearance structure of the full-bridge power unit provided by the embodiment of the application is simple.

In one embodiment of the present application, as shown in fig. 10, the full-bridge power unit includes three half-bridge power units, and the driving board is disposed over the three half-bridge power units.

In fig. 10, three half-bridge power units are illustrated as a U-phase half-bridge power unit 51, a V-phase half-bridge power unit 52, and a W-phase half-bridge power unit 53, respectively.

In one embodiment of the present application, the first semiconductor power device 211 further comprises a first gate driving terminal 13, and the first gate driving terminal 13 is electrically connected to the driving board 7.

In one embodiment of the present application, the second semiconductor power device 212 further includes a second gate driving terminal 23, and the second gate driving terminal 23 is electrically connected to the driving board 7.

In one embodiment of the present application, the first semiconductor power device 211 further includes a first source driving terminal 14, and the first source driving terminal 14 is electrically connected to the driving board 7.

In one embodiment of the present application, the second semiconductor power device 212 further includes a second source driving terminal 24, and the second source driving terminal 24 is electrically connected to the driving board 7.

In the embodiment of the present application, the driving board 7 is connected to the first gate driving terminal 13 and the first source driving terminal 14 of the first semiconductor power device 211. The driving board 7 is typically provided with a driving device, and the driving device is connected to the first gate driving terminal 13 and the first source driving terminal 14 of the first semiconductor power device 211 through the driving board, so as to drive the first semiconductor power device 211.

Similarly, in one embodiment of the present application, the second gate driving terminal 23 and the second source driving terminal 24 of the second semiconductor power device 212 are connected to the driving board 7, respectively.

In connection with the embodiment of the full-bridge power unit provided by the present application, the full-bridge power unit may be as shown in fig. 10. Based on the full-bridge power unit shown in fig. 10, as shown in fig. 11, a dc positive busbar 31 and a dc negative busbar 32 are arranged between the ac output busbar 33 and the driving board 7 to form a shield, and the main electric field lines emitted from the ac output busbar 33 cannot reach the driving board 7, so that the potential jump on the ac output busbar 33 is not easy to affect the normal operation of the driving board.

Further, based on the full-bridge power unit shown in fig. 10, as shown in fig. 12, the average junction temperature of the full-bridge power unit in the layout of the embodiment of the application is 145.4 ℃, the maximum junction temperature is 153.1 ℃, and the difference value between the average junction temperature of the nearest single tube group and the farthest single tube group of the cooling liquid from the inlet is 17 ℃. From simulation results, the arrangement adopted by the embodiment of the application has better heat dissipation and temperature uniformity, and the reason for the difference is that: the water tank flow channel of the cooling liquid is shorter, the overall flow resistance is reduced, and the overall heat dissipation performance can be improved; the temperature difference of the cooling liquid at the inlet and the outlet is reduced, and the temperature uniformity can be improved.

The embodiment of the application also provides electronic equipment, which comprises the full-bridge power unit provided by any embodiment.

The embodiment of the application also provides a vehicle, which comprises the full-bridge power unit provided by the embodiment.

In one embodiment of the application, the vehicle may be a pure electric vehicle, and may also be a hybrid electric vehicle.

While certain specific embodiments of the application have been described in detail by way of example, it will be appreciated by those skilled in the art that the above examples are for illustration only and are not intended to limit the scope of the application. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the application. The scope of the application is defined by the appended claims.

Claims (36)

1. A half-bridge power unit comprising:

an ac output pole busbar (33), the ac output pole busbar (33) having a first surface;

At least one half-bridge power subunit, each half-bridge power subunit is disposed on the first surface side of the ac output electrode busbar (33), and each half-bridge power subunit at least comprises a first semiconductor power device (211) and a second semiconductor power device (212);

The source power terminal (12) of the first semiconductor power device and the drain power terminal (11) of the first semiconductor power device are respectively located on different side surfaces in the first direction; the source power terminal (22) of the second semiconductor power device and the drain power terminal (21) of the second semiconductor power device are respectively located on different side surfaces in the first direction;

The source power terminal (12) of the first semiconductor power device and the drain power terminal (21) of the second semiconductor power device are commonly connected to the first surface side of the alternating current output electrode busbar (33).

2. The half-bridge power unit of claim 1, wherein the first semiconductor power device (211) and the second semiconductor power device (212) are arranged side by side along a first direction, a source power terminal (12) of the first semiconductor power device being arranged opposite a drain power terminal (21) of the second semiconductor power device; the first direction is a direction in which a drain power terminal (11) of the first semiconductor power device points to a source power terminal (12) of the first semiconductor power device.

3. The half-bridge power unit of claim 2, further comprising:

And the drain power terminal (11) of the first semiconductor power device is electrically connected with the direct current positive electrode busbar (31).

4. A half-bridge power unit as claimed in claim 3, further comprising:

And the source power terminal (22) of the second semiconductor power device is electrically connected with the direct current negative electrode busbar (32).

5. The half-bridge power unit of claim 4, wherein the dc positive busbar (31) and the dc negative busbar (32) are located on the second surface side of the ac output busbar (33), and the first surface of the ac output busbar (33) and the second surface of the ac output busbar (33) are two surfaces opposite to each other of the ac output busbar (33).

6. The half-bridge power unit according to claim 4, wherein the dc positive busbar (31), the dc negative busbar (32) and the ac output busbar (33) are arranged at intervals and in parallel in a second direction, the second direction being a direction in which the half-bridge power subunit points to the ac output busbar (33), the second direction being perpendicular to the first direction.

7. The half-bridge power unit according to claim 6, characterized in that the dc positive busbar (31) is located between the dc negative busbar (32) and the ac output busbar (33);

Or the direct current negative electrode busbar (32) is positioned between the direct current positive electrode busbar (31) and the alternating current output electrode busbar (33).

8. The half-bridge power unit according to claim 6, wherein the ac output busbar (33) leads out a third external terminal (331) in a third direction, the third direction being perpendicular to the first and second directions, the third external terminal being for connecting an external load.

9. The half-bridge power unit of claim 8, wherein the drain power terminal (11) of the first semiconductor power device is connected to the dc positive busbar (31), the dc positive busbar (31) leading out the first external terminal (311) in a third direction.

10. The half-bridge power unit according to claim 9, characterized in that the source power terminal (22) of the second semiconductor power device is connected to the dc negative busbar (32), the dc negative busbar (32) leading out the second external terminal (321) in a third direction.

11. The half-bridge power unit of claim 10, wherein the first external terminal and the second external terminal are disposed on a first side of the third direction.

12. The half-bridge power unit of claim 11, wherein the third external terminal (331) is disposed on a second side of the third direction.

13. Half-bridge power unit according to claim 11, characterized in that it comprises a capacitor (1),

The first end of the capacitor (1) is electrically connected with the first external terminal (311), and the second end of the capacitor (1) is electrically connected with the second external terminal (321).

14. The half-bridge power unit according to claim 6, characterized in that a first insulating layer (4) is arranged between the ac output busbar (33) and the dc negative busbar (32), and a second insulating layer (5) is arranged between the dc positive busbar (31) and the dc negative busbar (32);

Or a first insulating layer (4) is arranged between the direct current negative electrode busbar (32) and the direct current positive electrode busbar (31), and a second insulating layer (5) is arranged between the direct current positive electrode busbar (31) and the alternating current output electrode busbar (33).

15. The half-bridge power unit of claim 6, wherein the first semiconductor power device (211) further comprises a first gate drive terminal (13), the first gate drive terminal (13) being disposed laterally of the first direction, the first gate drive terminal (13) extending out along the second direction.

16. The half-bridge power unit of claim 6, wherein the second semiconductor power device (212) further comprises a second gate drive terminal (23), the second gate drive terminal (23) being disposed laterally of the first direction, the second gate drive terminal (23) extending out along the second direction.

17. The half-bridge power unit according to claim 15, wherein the dc positive busbar (31), the dc negative busbar (32) and the ac output busbar (33) are provided with a first opening (8), and the first gate drive terminal (13) of the first semiconductor power device (211) is led out through the first opening (8).

18. The half-bridge power cell of claim 17, wherein the first semiconductor power device (211) further comprises a first source drive terminal (14), the first source drive terminal (14) being disposed adjacent to the first gate drive terminal (13), the first source drive terminal (14) leading out of the first aperture (8).

19. The half-bridge power unit according to claim 16, wherein the dc positive busbar (31), the dc negative busbar (32) and the ac output busbar (33) are provided with second openings, through which second openings the second gate drive terminals (23) of the second semiconductor power device (212) are led out.

20. The half-bridge power cell of claim 19, wherein the second semiconductor power device (212) further comprises a second source drive terminal (24), the second source drive terminal (24) being disposed adjacent to the second gate drive terminal (23), the second source drive terminal (24) exiting from the second aperture.

21. The half-bridge power cell of claim 4, wherein at least any one of the dc positive busbar (31), the dc negative busbar (32) and the ac output busbar (33) covers the at least one half-bridge power subunit.

22. The half-bridge power unit according to claim 1, characterized in that it comprises at least two half-bridge power subunits arranged side by side along a third direction, wherein the third direction is perpendicular to the first direction in the plane of the first surface of the ac output busbar (33).

23. The half-bridge power unit according to claim 4, wherein the drain power terminal (11) of the first semiconductor power device and the dc positive busbar (31), the source power terminal (22) of the second semiconductor power device and the dc negative busbar (32), and the source power terminal (12) of the first semiconductor power device and the drain power terminal (21) of the second semiconductor power device and the ac output busbar (33) are electrically connected by laser welding, respectively.

24. A half-bridge power unit according to claim 3, characterized in that the first semiconductor power device (211) comprises a body (16), the drain power terminal (11) of the first semiconductor power device comprises a protruding structure (9), the protruding structure (9) being located between a connection location of the dc positive busbar (31) and the source power terminal (12) of the first semiconductor power device.

25. The half-bridge power unit according to claim 1, characterized in that the ac output busbar (33) is provided with a recess (332), and the source power terminal (12) of the first semiconductor power device and the drain power terminal (21) of the second semiconductor power device are connected to the outer bottom of the recess (332).

26. A full bridge power unit comprising at least two half bridge power units as claimed in any one of claims 1 to 25.

27. The full bridge power unit of claim 26, wherein at least two of the half bridge power units are disposed side-by-side along a first direction.

28. Full bridge power unit according to claim 27, characterized in that the full bridge power unit further comprises a drive plate (7), the drive plate (7) at least partially covering the half bridge power unit.

29. The full bridge power unit of claim 28, wherein the full bridge power unit comprises three half bridge power units, the drive plate being disposed over the three half bridge power units.

30. The full bridge power unit of claim 29, wherein the first semiconductor power device (211) further comprises a first gate drive terminal, the first gate drive terminal forming an electrical connection with the drive plate.

31. Full bridge power unit according to claim 30, characterized in that the second semiconductor power device further comprises a second gate drive terminal, which second gate drive terminal forms an electrical connection with the drive plate (7).

32. The full-bridge power unit of claim 27, further comprising a heat-dissipating substrate (6) on which the half-bridge power unit is disposed.

33. The full bridge power unit of claim 32, wherein the first semiconductor power device (211) comprises a first thermally conductive layer (15) on a lower surface; the second semiconductor power device (212) includes a second thermally conductive layer on a lower surface;

The first heat conduction layer (15) and the second heat conduction layer are welded or sintered with the heat dissipation substrate (6).

34. The full-bridge power unit according to claim 33, wherein the heat dissipation substrate is provided with bosses (61) corresponding to the first semiconductor power device (211) and the second semiconductor power device (212) one to one;

The first heat conduction layer (15) and the second heat conduction layer are respectively welded or sintered with corresponding bosses (61) on the heat dissipation substrate (6).

35. An electronic device comprising a half-bridge power unit as claimed in any one of claims 1 to 25 or a full-bridge power unit as claimed in any one of claims 26 to 34.

36. A vehicle comprising the electronic device of claim 35.