CN108206165A - The fixing means of anti-interference power electronic building brick and its radiator current potential - Google Patents
The fixing means of anti-interference power electronic building brick and its radiator current potential Download PDFInfo
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- CN108206165A CN108206165A CN201611187787.2A CN201611187787A CN108206165A CN 108206165 A CN108206165 A CN 108206165A CN 201611187787 A CN201611187787 A CN 201611187787A CN 108206165 A CN108206165 A CN 108206165A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4018—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by the type of device to be heated or cooled
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4037—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Power Conversion In General (AREA)
Abstract
The disclosure provides a kind of anti-interference power electronic building brick, including：Power electronic element, including conductive region, insulating regions and heat-radiating substrate, wherein insulating regions are between conductive region and heat-radiating substrate, to prevent to be in electrical contact between conductive region and heat-radiating substrate；Radiator is attached at heat-radiating substrate, the heat generated with dissipation power electronic element；And charge inducing leadage circuit, it including an at least resistor, is electrically connected between conductive region and radiator, with the charge inducing on radiator of releasing so that the current potential on conductive region is identical or close with the current potential on radiator.The disclosure additionally provides a kind of fixing means of the radiator current potential of the power electronic element for anti-interference power electronic building brick, including：Charge inducing leadage circuit is provided, charge inducing leadage circuit includes an at least resistor, is electrically connected between conductive region and radiator, with the charge inducing on radiator of releasing.
Description
Technical field
This application involves power electronics field, more particularly to a kind of anti-interference power electronic building brick and for this
The fixing means of the radiator current potential of the power electronic element of kind anti-interference power electronic building brick.
Background technology
In power electronics field, it is widely used volage current transformer in high power at present, such as 10kV frequency converters,
10kV or 35kV static reactive power compensations generator (Static Var Generator, SVG) etc..In order to adapt to the application of high voltage
Occasion, these current transformers are passed through to be realized frequently with technological means such as module-cascade, transformer pressure-reducing, devices in series.
The considerations of for volume and cost, by multiple power electronic devices, i.e., what multiple power electronic elements were used in series
Method is widely used.
In system operation, the radiator for power electronic devices heat dissipation can induce very high electrostatic or alternation electricity
Position makes power electronic devices that insulation breakdown occur or cause electromagnetic interference to driving circuit, is damaged so as to cause power electronic devices
It goes bad or makes driving circuit cisco unity malfunction due to interference.
Invention content
The disclosure is designed to provide a kind of anti-interference power electronic building brick and for this anti-interference power electronics
The fixing means of the radiator current potential of the power electronic element of component, so as to be overcome at least to a certain extent due to the relevant technologies
Limitation and defect caused by one or more problems.
Other characteristics and advantages of the disclosure will be by the following detailed description apparent from or partially by the disclosure
Practice and acquistion.
According to one aspect of the disclosure, a kind of anti-interference power electronic building brick is provided, including：
Power electronic element, including conductive region, insulating regions and heat-radiating substrate, wherein the insulating regions are positioned at described
Between conductive region and the heat-radiating substrate, to prevent to be in electrical contact between the conductive region and the heat-radiating substrate；
Radiator is attached at the heat-radiating substrate, the heat generated with the power electronic element that dissipates；And
Charge inducing leadage circuit, including an at least resistor, be electrically connected to the conductive region and the radiator it
Between, with the charge inducing on the radiator of releasing so that the current potential on the conductive region and the current potential on the radiator
It is identical or close.
According to one embodiment, wherein the charge inducing leadage circuit further includes a capacitor, it is connected in parallel in described
Resistor both ends.
According to one embodiment, wherein the radiator includes metal fin.
According to one embodiment, wherein being in direct contact between the radiator and the heat-radiating substrate.
According to one embodiment, wherein the power electronic element is switch element.
According to one embodiment, wherein the switch element is insulated gate bipolar transistor, metal-oxide semiconductor (MOS)
Any one of field-effect transistor and gate turn-off thyristors.
According to one embodiment, wherein the conductive region is the emitter and current collection of the insulated gate bipolar transistor
The cathode of pole, the source electrode and drain electrode of the mos field effect transistor and the gate turn-off thyristors
With any pole in anode.
According to one embodiment, wherein
The number of the power electronic element is to be connected in series with more than one,
The number of the radiator is more than one, and, the radiator patch identical with the number of the power electronic element
Invest the corresponding heat-radiating substrate, the heat that is generated with the corresponding power electronic element that dissipates and
The number of the charge inducing leadage circuit is more than one, and, institute identical with the number of the power electronic element
It states resistor to be electrically connected between the corresponding conductive region and the radiator, to release on the corresponding radiator
Charge inducing so that the current potential on the conductive region and the current potential on the corresponding radiator are identical or close.
According to one embodiment, wherein
The number of the power electronic element is n, and to be connected in series with,
The number of the radiator is one, and the radiator is attached at the n heat-radiating substrates, described with dissipation n
Power electronic element generate heat and
The number of the charge inducing leadage circuit is one, and the resistor is electrically connected to the n power electronic member
Between the midpoint of the series connection of part and the radiator, with the charge inducing on the radiator of releasing, wherein the midpoint is determined
Justice is
If n is even number, the midpoint is the n-th/2 power electronic element and the n-th/2+1 power electronics
The tie point of element and
If n is odd number, the midpoint is (n-1)/2 power electronic element and (n+1)/2 work(
Tie point or (n+1)/2 power electronic element of rate electronic component and (n+3)/2 the power electronic member
The tie point of part.
The fixation side of a kind of radiator current potential for power electronic element another aspect of the present disclosure provides
Method, wherein the power electronic element includes conductive region, insulating regions and heat-radiating substrate, the insulating regions are located at described lead
Between electric region and the heat-radiating substrate, to prevent to be in electrical contact between the conductive region and the heat-radiating substrate；The heat dissipation
Device is attached at the heat-radiating substrate, with the heat that the power electronic element of dissipating generates, the method includes：
Charge inducing leadage circuit is provided, the charge inducing leadage circuit includes an at least resistor, is electrically connected to institute
It states between conductive region and the radiator, with the charge inducing on the radiator of releasing.
According to one embodiment, wherein also providing a capacitor in the charge inducing leadage circuit, it is connected in parallel in
The resistor both ends.
According to one embodiment, wherein the radiator includes metal fin.
According to one embodiment, wherein making to be in direct contact between the radiator and the heat-radiating substrate.
According to one embodiment, wherein the power electronic element is switch element.
According to one embodiment, wherein the switch element is insulated gate bipolar transistor, metal-oxide semiconductor (MOS)
Any one of field-effect transistor and gate turn-off thyristors.
According to one embodiment, wherein the conductive region is the emitter and current collection of the insulated gate bipolar transistor
The cathode of pole, the source electrode and drain electrode of the mos field effect transistor and the gate turn-off thyristors
With any pole in anode.
According to one embodiment, wherein
Make the number of the power electronic element more than one, and to be connected in series with,
Make the number of the radiator more than one, and, the radiator identical with the number of the power electronic element
Be attached at the corresponding heat-radiating substrate, the heat that is generated with the corresponding power electronic element that dissipates and
Make the number of the charge inducing leadage circuit more than one, and identical with the number of the power electronic element,
The resistor is electrically connected between the corresponding conductive region and the radiator, to release on the corresponding radiator
Charge inducing.
According to one embodiment, wherein
The number for making the power electronic element is n, and to be connected in series with,
The number for making the radiator is one, and the radiator is attached at the n heat-radiating substrates, with n institute of dissipation
State power electronic element generation heat and
The number for making the charge inducing leadage circuit is one, and the resistor is electrically connected to the n power electronic
Between the midpoint of the series connection of element and the radiator, with the charge inducing on the radiator of releasing, wherein the midpoint
Definition is
If n is even number, the midpoint is the n-th/2 power electronic element and the n-th/2+1 power electronics
The tie point of element and
If n is odd number, the midpoint is (n-1)/2 power electronic element and (n+1)/2 work(
Tie point or (n+1)/2 power electronic element of rate electronic component and (n+3)/2 the power electronic member
The tie point of part.
According to the above-mentioned anti-interference power electronic building brick of the application and dissipating for above-mentioned anti-interference power electronic building brick
The fixing means of hot device current potential, it is ensured that the current potential of each power electronic element it is identical with the current potential of radiator to radiate for it or
It is close, so as to prevent the insulation breakdown of power electronic element and avoid causing driving circuit electromagnetic interference, while again
The volume and complexity of system will not additionally be increased.
For the enabled feature and technology contents for being further understood that the application, please refer to below in connection with the application specifically
Bright and attached drawing, but detailed description and attached drawing here is intended merely to illustrate the application rather than to claims hereof
Range makees any limitation.
Description of the drawings
Its example embodiment is described in detail by referring to accompanying drawing, the above and other feature and advantage of the disclosure will become
It is more obvious.
Fig. 1 is the schematic diagram of the topology of a middle volage current transformer circuit of the prior art；
Fig. 2 is the schematic top plan view of the internal structure of a power electronic element of the prior art；
Fig. 3 is power electronic element 1010 and the schematic side view of the internal structure after radiator assembling in Fig. 2；
Fig. 4 is the schematic top plan view of the external structure of a power electronic element of the prior art；
Fig. 5 is power electronic element 1020 and the schematic top plan view of the external structure after radiator assembling in Fig. 4；
Fig. 6 is the schematic diagram of one embodiment of the anti-interference power electronic building brick of the application；
Fig. 7 is the schematic diagram of another embodiment of the anti-interference power electronic building brick of the application；
Fig. 8 is the equivalent circuit diagram of the anti-interference power electronic building brick 2010 of the application shown in fig. 7；
Fig. 9 is the schematic diagram of another embodiment of the anti-interference power electronic building brick of the application；
Figure 10 is the equivalent circuit diagram of the anti-interference power electronic building brick shown in Fig. 9；
Figure 11 is the schematic diagram of another embodiment of the anti-interference power electronic building brick of the application；
Figure 12 is the equivalent circuit diagram of the anti-interference power electronic building brick shown in Figure 11；
Figure 13 is for the fixing means of the radiator current potential of the power electronic element of above-mentioned anti-interference power electronic building brick
One embodiment flow chart；
Figure 14 is for the fixing means of the radiator current potential of the power electronic element of above-mentioned anti-interference power electronic building brick
Another embodiment flow chart；
Figure 15 is for the fixing means of the radiator current potential of the power electronic element of above-mentioned anti-interference power electronic building brick
Another embodiment flow chart；And
Figure 16 is the radiator floating potential fixation side for the power electronic element of above-mentioned anti-interference power electronic building brick
The flow chart of another embodiment of method.
Specific embodiment
Example embodiment is described more fully with reference to the drawings.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to embodiment set forth herein；On the contrary, these embodiments are provided so that the application will
Fully and completely, and by the design of example embodiment comprehensively it is communicated to those skilled in the art.It is identical attached in figure
Icon note represents same or similar structure, thus will omit their detailed description.
In addition, described feature, structure or characteristic can be incorporated in one or more implementations in any suitable manner
In example.In the following description, many details are provided to fully understand embodiments herein so as to provide.However,
It will be appreciated by persons skilled in the art that the technical solution of the application can be put into practice without one in the specific detail or more
It is more or other structures, component, step, method etc. may be used.In other cases, known in being not shown in detail or describing
Structure, component or operation to avoid fuzzy the application various aspects.
One embodiment of the anti-interference power electronic building brick of the application is described referring initially to Fig. 1-Fig. 6.
Fig. 1 is the schematic diagram of the topology of a middle volage current transformer circuit of the prior art.As shown in fig. 1, middle buckling
It flows device circuit 1000 and includes bus capacitor CB, busbar B and switch series S1Switch series S6.Switch series S1And S4U phase bridge arms are formed,
Switch series S2And S5Form V phase bridge arms, switch series S3And S6Form W phase bridge arms.Switch series S1Switch series S6It is to be opened by multiple respectively
It is in series to close pipe S, to adapt to the application scenario of high voltage.Switching tube S can be insulated gate bipolar transistor (IGBT),
Can be other power electronics such as mos field effect transistor (MOSFET), gate turn-off thyristors (GTO)
Device, i.e. power electronic element.Since switching tube S will bear high voltage and high current during the work time, so needing with scattered
Hot device radiates.
Fig. 2 is the schematic top plan view of the internal structure of a power electronic element of the prior art, power electricity therein
Subcomponent 1010 can be the switching tube S in Fig. 1.As shown in Figure 2, power electronic element 1010 includes conductive region 1, insulation
Region 2 and heat-radiating substrate 3, wherein insulating regions 2, between conductive region 1 and heat-radiating substrate 3, to prevent 1 He of conductive region
It is in electrical contact between heat-radiating substrate 3.Insulating regions 2 can be for example made of ceramic materials.Ignore the thickness of insulating regions 2, conduction region
There is gap d between domain 1 and heat-radiating substrate 3.Overtension will puncture gap d between conductive region 1 and heat-radiating substrate 3, cause
Electric arc so as to damage power electronic element or system or generate electromagnetic interference, causes driving circuit cannot normal work due to interference
Make.
Fig. 3 is power electronic element 1010 and the schematic side view of the internal structure after radiator assembling in Fig. 2.Such as figure
Shown in 3, power electronics assemblies 1010 ' include power electronic element 1010 and radiator 4.Radiator 4 is attached at heat-radiating substrate
3, the heat generated with dissipation power electronic element 1010.Radiator 4 is attached at after heat-radiating substrate 3, and the two has identical
Current potential.
Fig. 4 is the schematic top plan view of the external structure of a power electronic element of the prior art, for preferably saying
The design feature of bright power electronic element.As shown in Figure 4, power electronic element 1020 includes main body 5 and electrode 6- electrodes 9.
Here main body 5 includes insulating regions 2, the conductive region 1 that is wrapped in by insulating regions 2 and heat-radiating substrate 3 in Fig. 2, but
Its profile is mainly reflected in the size of heat-radiating substrate 3, because heat-radiating substrate 3 is in the outermost of power electronic element 1020.Here
Electrode 6 be, for example, collector, electrode 7 be, for example, emitter, electrode 8 be, for example, grid, electrode 9 be, for example, grid ground, electricity
Pole 6- electrodes 9 can be regarded as the outside lead of conductive region 1.In the course of work of power electronic element 1020,6 He of electrode
Electrode 7 will bear high voltage and high current, therefore be generally manufactured to very thick quadrangular, overlook as square, circle therein
Circle represents the vertical view of the screw hole for connection, and wherein screw is drawn positioned at electrode on copper bar.
Fig. 5 is power electronic element 1020 and the schematic top plan view of the external structure after radiator assembling in Fig. 4.Such as figure
Shown in 5, power electronics assemblies 1020 ' include power electronic element 1020 and radiator 4.Radiator 4 is attached at power electronic
The heat-radiating substrate of element 1020, i.e. power electronic element 1020 with the heat that dissipation power electronic element 1020 generates, works as power
When electronic component 1020 works, floating potential can be induced on radiator 4；Or the potential change when power electronic element 1020
When, floating potential can be induced on radiator 4.
Fig. 6 is the schematic diagram of one embodiment of the anti-interference power electronic building brick of the application.As shown in Figure 6, this Shen
Anti-interference power electronic building brick 2000 please includes power electronics assemblies 1010 ' shown in Fig. 3 and charge inducing leadage circuit 20.
Since power electronics assemblies 1010 ' have been fully described in front, so repeating no more.
The charge inducing leadage circuit 20 of the application includes an at least resistor R, is electrically connected to conductive region 1 and radiator
Between 4, with the charge inducing on radiator 4 of releasing so that the current potential on conductive region 1 it is identical with the current potential on radiator 4 or
It is close.
Conductive region 1 described in each embodiment of the application is primarily referred to as holding in the course of work of power electronic element
The region connected by the electrode of high voltage and high current, collector 6 and emitter 7 as shown in Figures 4 and 5.It is each to implement
Conductive region 1 described in example can also refer to the electrode that low-voltage and low current are born in the course of work of power electronic element
The region connected, gate electrode 8 and grid as shown in Figures 4 and 59.
Fig. 7 is the schematic diagram of another embodiment of the anti-interference power electronic building brick of the application.As shown in Figure 7, originally
The anti-interference power electronic building brick 2010 of application includes power electronics assemblies 1010 ' shown in Fig. 3 and charge inducing leadage circuit
21。
Since power electronics assemblies 1010 ' have been fully described in front, so repeating no more.
The charge inducing leadage circuit 21 of the present embodiment further includes one compared with the charge inducing leadage circuit 20 in Fig. 6
Capacitor C is connected in parallel in resistor R both ends.Capacitor C is particularly advantageous to release by alternation for increasing charge/discharge rates
The charge sensed on radiator 4 caused by voltage or high-frequency pulse voltage is more advantageous to high-frequency impulse current potential of releasing.
Fig. 8 is the equivalent circuit diagram of the anti-interference power electronic building brick 2010 of the application shown in fig. 7.Such as institute in Fig. 8
Show, the anti-interference power electronic building brick 2010 ' of the application includes power electronic element T, radiator H, resistor R and capacitor C.
Power electronic element T shown in fig. 8 is, for example, power electronic element 1010 shown in fig. 7.It is shown in fig. 8
Radiator H is, for example, radiator 4 shown in fig. 7.Resistor R and capacitor C shown in fig. 8 are for example formed shown in Fig. 7
Charge inducing leadage circuit 21.
Shown in Fig. 8 is only one embodiment of the application, wherein can not also include capacitor C.
One embodiment of anti-interference power electronic building brick as the application, aforementioned heat sink include metal fin.
One embodiment of anti-interference power electronic building brick as the application is straight between aforementioned heat sink and heat-radiating substrate
Contact.
One embodiment of anti-interference power electronic building brick as the application, aforementioned power electronic component are switch members
Part.
One embodiment of anti-interference power electronic building brick as the application, aforementioned switches element are insulated gate bipolars
Appointing in transistor (IGBT), mos field effect transistor (MOSFET) and gate turn-off thyristors (GTO)
What is a kind of.
One embodiment of anti-interference power electronic building brick as the application, the aforementioned conductive region are that insulated gate is double
The emitter and collector of bipolar transistor, the source electrode and drain electrode of mos field effect transistor and grid
Any pole in the cathode and anode of cutoff thyristor.
Fig. 9 is the schematic diagram of another embodiment of the anti-interference power electronic building brick of the application.Figure 10 is shown in Fig. 9
Anti-interference power electronic building brick equivalent circuit diagram.As shown in figs. 9 and 10, in the anti-interference power electronics group of the application
In part 2020 and 2020 ', the number of power electronic element T can be more than one, and is to be connected in series with；The number of radiator H simultaneously
Mesh is and identical with the number of power electronic element T also above one, and radiator H is attached at dissipating for corresponding power electronic element T
Hot substrate, the heat generated with the corresponding power electronic element T that dissipates；Meanwhile charge inducing leadage circuit, such as in Figure 10
The number for the circuit that resistor R and capacitor C is formed is also above one, and, resistor identical with the number of power electronic element T
R is electrically connected between the conductive region (such as collector and emitter) of corresponding power electronic element T and radiator H, to let out
Put the charge inducing on corresponding radiator H so that current potential and corresponding radiator on the conductive region of power electronic element T
Current potential on H is identical or close.
Although being to be used as charge inducing leadage circuit with resistor R and capacitor the C circuit formed in Figure 10, also may be used
Not include capacitor C.
In addition, it is connected in series between multiple power electronic element T shown in Fig. 9 by connecting copper bar L, due to even
It is unrelated with the application to meet copper bar L, so repeating no more.
Figure 11 is the schematic diagram of another embodiment of the anti-interference power electronic building brick of the application.Figure 12 is institute in Figure 11
The equivalent circuit diagram of anti-interference power electronic building brick shown.As shown in fig. 11 and fig, in the anti-interference power of the application electricity
In sub-component 2030 and 2030 ', the number of power electronic element T is n, and to be connected in series with, meanwhile, the number of radiator H
It it is one, radiator H is attached at the respective heat-radiating substrate of n power electronic element T, with n power electronic element T production of dissipation
Raw heat, meanwhile, charge inducing leadage circuit, such as the number of circuit that resistor R in Figure 12 and capacitor C is formed is
One, resistor electricity R is connected between the midpoint N of the series connection of n power electronic element T and radiator H, with the radiator H that releases
On charge inducing.
As shown in Figure 12, n power electronic element T1…Tj、Tj+1…TnTo be connected in series with.Wherein midpoint N is according to as follows
Mode defines：
If n is even number, midpoint N is the connection of the n-th/2 power electronic element T and n-th/2+1 power electronic element T
Point.That is, the value of the j in Figure 12 is n/2 at this time.
If n is odd number, midpoint N is (n-1)/2 power electronic element T and (n+1)/2 power electronic element T
Tie point.That is, the value of the j in Figure 12 is (n-1)/2 at this time.
Alternatively, if n is odd number, midpoint N is (n+1)/2 power electronic element T and (n+3)/2 power electronic
The tie point of element T, that is to say, that the value of the j in Figure 12 is (n+1)/2 at this time.
Although being to be used as charge inducing leadage circuit with resistor R and capacitor the C circuit formed in Figure 12, also may be used
Not include capacitor C.
In addition, be connected in series between multiple power electronic element T shown in Figure 11 by connecting copper bar L, due to
Connecting copper bar L is unrelated with the application, so repeating no more.
Corresponding with the above-mentioned anti-interference power electronic building brick of the application, present invention also provides as follows for above-mentioned anti-dry
Disturb the fixing means of the radiator current potential of the power electronic element of power electronics assemblies.
Figure 13 is for the fixing means of the radiator current potential of the power electronic element of above-mentioned anti-interference power electronic building brick
One embodiment flow chart.As shown in Figure 13, the power for above-mentioned anti-interference power electronic building brick of the present embodiment
The fixing means of the radiator current potential of electronic component includes：Step 100, charge inducing leadage circuit 20 is provided, charge inducing is let out
Electric discharge road 20 includes an at least resistor R, is electrically connected between conductive region 1 and radiator 4, with the sense on radiator 4 of releasing
Answer charge.
Figure 14 is for the fixing means of the radiator current potential of the power electronic element of above-mentioned anti-interference power electronic building brick
Another embodiment flow chart.As shown in Figure 14, the work(for above-mentioned anti-interference power electronic building brick of the present embodiment
The fixing means of the radiator current potential of rate electronic component includes：Step 100 ', wherein step 100 ' be based on step 100, and
One capacitor C in charge inducing leadage circuit 21 is provided, is connected in parallel in resistor R both ends.
The radiator current potential of the power electronic element for above-mentioned anti-interference power electronic building brick as the application is consolidated
Determine one embodiment of method, aforementioned heat sink includes metal fin.
The radiator current potential of the power electronic element for above-mentioned anti-interference power electronic building brick as the application is consolidated
Determine one embodiment of method, be in direct contact between aforementioned heat sink and heat-radiating substrate.
The radiator current potential of the power electronic element for above-mentioned anti-interference power electronic building brick as the application is consolidated
Determine one embodiment of method, aforementioned power electronic component is switch element.
The radiator current potential of the power electronic element for above-mentioned anti-interference power electronic building brick as the application is consolidated
Determine one embodiment of method, aforementioned switches element is insulated gate bipolar transistor, metal oxide semiconductor field-effect crystalline substance
Any one of body pipe and gate turn-off thyristors.
The radiator current potential of the power electronic element for above-mentioned anti-interference power electronic building brick as the application is consolidated
Determine one embodiment of method, aforesaid conductive region is the emitter and collector of insulated gate bipolar transistor, metal oxidation
Any pole in the source electrode and drain electrode of object semiconductor field effect transistor and the cathode and anode of gate turn-off thyristors.
Figure 15 is for the fixing means of the radiator current potential of the power electronic element of above-mentioned anti-interference power electronic building brick
Another embodiment flow chart.As shown in Figure 15, the work(for above-mentioned anti-interference power electronic building brick of the present embodiment
The fixing means of the radiator current potential of rate electronic component includes：Step 100 ", wherein step 100 " is to be based on step 100, and
Make the number of power electronic element T more than one, and to be connected in series with, make the number of radiator H more than one, and electric with power
The number of subcomponent T is identical, and radiator H is attached at the heat-radiating substrate of corresponding power electronic element T, with the corresponding power that dissipates
Electronic component T generate heat and make the number of charge inducing leadage circuit 20 more than one, and with power electronic element T
Number it is identical, resistor R correspondence be electrically connected between the conductive region of power electronic element T and radiator H, with correspondence of releasing
Radiator H on charge inducing.
Although being to be used as charge inducing leadage circuit with the resistor R circuits formed in Figure 15, charge inducing is released
Circuit can also include capacitor C, be connected in parallel on the both ends of R.
Figure 16 is the radiator floating potential fixation side for the power electronic element of above-mentioned anti-interference power electronic building brick
The flow chart of another embodiment of method.As shown in Figure 16, the present embodiment for above-mentioned anti-interference power electronic building brick
The fixing means of the radiator current potential of power electronic element includes：Step 100 " ', wherein step 100 " ' be based on step 100,
And the number for making power electronic element T is n, and to be connected in series with, the number for making radiator H is one, and radiator H is attached
In the respective heat-radiating substrate of power electronic element T, with the dissipation power electronic element T heats generated and make charge inducing
The number of leadage circuit be one, resistor R be electrically connected to the series connection of n power electronic element T midpoint N and radiator H it
Between, with the charge inducing on radiator H of releasing.
With reference to Figure 12, in the radiator of the power electronic element for above-mentioned anti-interference power electronic building brick shown in Figure 16
The step 100 of the fixing means of current potential " ' in, n power electronic element T1…Tj、Tj+1…TnTo be connected in series with.Wherein midpoint N
It defines as follows：
If n is even number, midpoint N is the connection of the n-th/2 power electronic element T and n-th/2+1 power electronic element T
Point.That is, the value of the j in Figure 12 is n/2 at this time.
If n is odd number, midpoint N is (n-1)/2 power electronic element T and (n+1)/2 power electronic element T
Tie point.That is, the value of the j in Figure 12 is (n-1)/2 at this time.
Alternatively, if n is odd number, midpoint N is (n+1)/2 power electronic element T and (n+3)/2 power electronic
The tie point of element T, that is to say, that the value of the j in Figure 12 is (n+1)/2 at this time.
Although being to be used as charge inducing leadage circuit with the resistor R circuits formed in Figure 16, charge inducing is released
Circuit can also include capacitor C, be connected in parallel on the both ends of R.
According to the above-mentioned anti-interference power electronic building brick of the application and dissipating for above-mentioned anti-interference power electronic building brick
The fixing means of hot device current potential, it is ensured that the current potential of each power electronic element it is identical with the current potential of radiator to radiate for it or
It is close, so as to prevent the insulation breakdown of power electronic element and avoid causing driving circuit electromagnetic interference, while again
The volume and complexity of system will not additionally be increased.
The disclosure is described by above-mentioned related embodiment, however above-described embodiment is only the example for implementing the disclosure.
It must be noted that the embodiment disclosed is not limiting as the scope of the present disclosure.On the contrary, do not depart from the disclosure spirit and
In the range of made change and retouch, belong to the disclosure scope of patent protection.
Claims (18)
1. a kind of anti-interference power electronic building brick, including：
Power electronic element, including conductive region, insulating regions and heat-radiating substrate, wherein the insulating regions are located at the conduction
Between region and the heat-radiating substrate, to prevent to be in electrical contact between the conductive region and the heat-radiating substrate；
Radiator is attached at the heat-radiating substrate, the heat generated with the power electronic element that dissipates；And
Charge inducing leadage circuit including an at least resistor, is electrically connected between the conductive region and the radiator, with
The charge inducing released on the radiator so that the current potential on the conductive region it is identical with the current potential on the radiator or
It is close.
2. anti-interference power electronic building brick according to claim 1, wherein the charge inducing leadage circuit further includes one
Capacitor is connected in parallel in the resistor both ends.
3. anti-interference power electronic building brick according to claim 1 or 2, wherein the radiator includes metal fin.
4. anti-interference power electronic building brick according to claim 1 or 2, wherein the radiator and the heat-radiating substrate it
Between be in direct contact.
5. anti-interference power electronic building brick according to claim 1 or 2, wherein the power electronic element is switch member
Part.
6. anti-interference power electronic building brick according to claim 5, wherein the switch element is insulated gate bipolar crystalline substance
Any one of body pipe, mos field effect transistor and gate turn-off thyristors.
7. anti-interference power electronic building brick according to claim 6, wherein the conductive region is the insulated gate bipolar
The emitter and collector of transistor npn npn, the source electrode and drain electrode of the mos field effect transistor, Yi Jisuo
State any pole in the cathode and anode of gate turn-off thyristors.
8. anti-interference power electronic building brick according to claim 1 or 2, wherein
The number of the power electronic element is to be connected in series with more than one,
The number of the radiator is and identical with the number of the power electronic element more than one, and the radiator is attached at
The corresponding heat-radiating substrate, the heat generated with the corresponding power electronic element that dissipates and
The number of the charge inducing leadage circuit is more than one, and, the electricity identical with the number of the power electronic element
Resistance device is electrically connected between the corresponding conductive region and the radiator, with the sensing on the corresponding radiator of releasing
Charge so that the current potential on the conductive region and the current potential on the corresponding radiator are identical or close.
9. anti-interference power electronic building brick according to claim 1 or 2, wherein
The number of the power electronic element is n, and to be connected in series with,
The number of the radiator is one, and the radiator is attached at the n heat-radiating substrates, with n power of dissipation
Electronic component generate heat and
The number of the charge inducing leadage circuit is one, and the resistor is electrically connected to the n power electronic element
Between the midpoint of series connection and the radiator, with the charge inducing on the radiator of releasing, wherein the definition at the midpoint is
If n is even number, the midpoint is the n-th/2 power electronic element and the n-th/2+1 power electronic elements
Tie point and
If n is odd number, the midpoint is (n-1)/2 power electronic element and (n+1)/2 the power electricity
Tie point or (n+1)/2 power electronic element of subcomponent and (n+3)/2 power electronic element
Tie point.
10. a kind of fixing means of radiator current potential for power electronic element, wherein the power electronic element includes leading
Electric region, insulating regions and heat-radiating substrate, the insulating regions are between the conductive region and the heat-radiating substrate, with resistance
Only it is in electrical contact between the conductive region and the heat-radiating substrate；The radiator is attached at the heat-radiating substrate, to dissipate
The heat of power electronic element generation is stated, the method includes：
Charge inducing leadage circuit is provided, the charge inducing leadage circuit includes an at least resistor, is electrically connected to described lead
Between electric region and the radiator, with the charge inducing on the radiator of releasing.
11. the fixing means of the radiator current potential according to claim 10 for power electronic element, wherein also in institute
It states and a capacitor is provided in charge inducing leadage circuit, be connected in parallel in the resistor both ends.
12. the fixing means of the radiator current potential for power electronic element according to claim 10 or 11, wherein institute
It states radiator and includes metal fin.
13. the fixing means of the radiator current potential for power electronic element according to claim 10 or 11, wherein making
It is in direct contact between the radiator and the heat-radiating substrate.
14. the fixing means of the radiator current potential for power electronic element according to claim 10 or 11, wherein institute
It is switch element to state power electronic element.
15. the fixing means of the radiator current potential according to claim 14 for power electronic element, wherein described open
It is appointing in insulated gate bipolar transistor, mos field effect transistor and gate turn-off thyristors to close element
What is a kind of.
16. the fixing means of the radiator current potential according to claim 15 for power electronic element, wherein described lead
Electric region is the emitter and collector of the insulated gate bipolar transistor, the metal oxide semiconductor field effect transistor
Any pole in the cathode and anode of the source electrode and drain electrode of pipe and the gate turn-off thyristors.
17. the fixing means of the radiator current potential for power electronic element according to claim 10 or 11, wherein
Make the number of the power electronic element more than one, and to be connected in series with,
Make the number of the radiator more than one, and identical with the number of the power electronic element, the radiator attaches
In the corresponding heat-radiating substrate, the heat that is generated with the corresponding power electronic element that dissipates and
Make the number of the charge inducing leadage circuit more than one, and identical with the number of the power electronic element, it is described
Resistor is electrically connected between the corresponding conductive region and the radiator, with the sense on the corresponding radiator of releasing
Answer charge.
18. the fixing means of the radiator current potential for power electronic element according to claim 10 or 11, wherein
The number for making the power electronic element is n, and to be connected in series with,
The number for making the radiator is one, and the radiator is attached at the n heat-radiating substrates, with n work(of dissipation
Rate electronic component generate heat and
The number for making the charge inducing leadage circuit is one, and the resistor is electrically connected to the n power electronic element
Series connection midpoint and the radiator between, with the charge inducing on the radiator of releasing, wherein the definition at the midpoint
It is
If n is even number, the midpoint is the n-th/2 power electronic element and the n-th/2+1 power electronic elements
Tie point and
If n is odd number, the midpoint is (n-1)/2 power electronic element and (n+1)/2 the power electricity
Tie point or (n+1)/2 power electronic element of subcomponent and (n+3)/2 power electronic element
Tie point.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611187787.2A CN108206165A (en) | 2016-12-20 | 2016-12-20 | The fixing means of anti-interference power electronic building brick and its radiator current potential |
| CN202110653610.1A CN113394181A (en) | 2016-12-20 | 2016-12-20 | Power switch assembly and fixing method of radiator potential thereof |
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| CN201611187787.2A CN108206165A (en) | 2016-12-20 | 2016-12-20 | The fixing means of anti-interference power electronic building brick and its radiator current potential |
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| CN108206165A true CN108206165A (en) | 2018-06-26 |
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| CN202110653610.1A Pending CN113394181A (en) | 2016-12-20 | 2016-12-20 | Power switch assembly and fixing method of radiator potential thereof |
| CN201611187787.2A Pending CN108206165A (en) | 2016-12-20 | 2016-12-20 | The fixing means of anti-interference power electronic building brick and its radiator current potential |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113383414A (en) * | 2019-02-04 | 2021-09-10 | 西门子股份公司 | Electrical component heat dissipation using forced convection and method of dissipating heat from an electrical component |
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| CN102771040A (en) * | 2010-02-04 | 2012-11-07 | 康派克特动力有限公司 | Electronic subassembly for switching electric power |
| CN203482479U (en) * | 2013-04-22 | 2014-03-12 | 无锡艾柯威科技有限公司 | Electrostatic leakage circuit of static electricity generation body |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4027969C1 (en) * | 1990-09-04 | 1991-11-07 | Mgv Margret Gruber Vertrieb Gmbh, 8000 Muenchen, De | Converter with controlled transistor bridge - has connecting choke divided into main and auxiliary chokes in diagonal branch of bridge |
| DE102008047028B4 (en) * | 2008-09-13 | 2011-06-09 | Infineon Technologies Ag | Circuit arrangement for controlling a power semiconductor switch and semiconductor module |
| JP6279898B2 (en) * | 2013-12-26 | 2018-02-14 | 株式会社東芝 | Switching control device |
| US9966946B2 (en) * | 2014-04-02 | 2018-05-08 | Infineon Technologies Ag | System and method for a driving a radio frequency switch |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102771040A (en) * | 2010-02-04 | 2012-11-07 | 康派克特动力有限公司 | Electronic subassembly for switching electric power |
| CN203482479U (en) * | 2013-04-22 | 2014-03-12 | 无锡艾柯威科技有限公司 | Electrostatic leakage circuit of static electricity generation body |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113383414A (en) * | 2019-02-04 | 2021-09-10 | 西门子股份公司 | Electrical component heat dissipation using forced convection and method of dissipating heat from an electrical component |
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