CN202131392U - Exhaust system of cavity of single crystal furnace - Google Patents
Exhaust system of cavity of single crystal furnace Download PDFInfo
- Publication number
- CN202131392U CN202131392U CN201120197832U CN201120197832U CN202131392U CN 202131392 U CN202131392 U CN 202131392U CN 201120197832 U CN201120197832 U CN 201120197832U CN 201120197832 U CN201120197832 U CN 201120197832U CN 202131392 U CN202131392 U CN 202131392U
- Authority
- CN
- China
- Prior art keywords
- single crystal
- exhaust system
- heat
- crystal growing
- venting port
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The embodiment of the utility model discloses an exhaust system of a cavity of a single crystal furnace, which is used for the growth of single crystal silicon and comprises the cavity of the single crystal furnace, a heat insulation cover, a diversion cylinder, a quartz crucible for placing silicon material, a three-segment crucible arranged on the outer side of the quartz crucible for heat conduction, a heater for heating the three-segment crucible, a heat insulation cylinder, a graphite supporting rod and a furnace chassis, wherein the cavity of the single crystal furnace is provided with a furnace chamber exhaust port, the heat insulation cylinder comprises an inner heat insulation cylinder, an outer heat insulation cylinder and an interlayer space positioned between the inner heat insulation cylinder and the outer heat insulation cylinder, and the inner heat insulation cylinder is provided with a plurality of vent holes in the vicinity of the heat insulation cover. In the embodiment of the utility model, the double-layer hollow heat insulation cylinder is adopted for changing the traditional gas flow direction of gas, thereby achieving the purpose of effectively reducing the chance of the contact between silicon material volatile matters in the gas and a graphite device, reducing the damages on the graphite device caused by the silicon material volatile matters, and prolonging the service life of the graphite device.
Description
Technical field
The utility model belongs to the single crystal silicon material preparing technical field, more particularly, relates to a kind of single crystal growing furnace cavity exhaust system of growing single-crystal silicon.
Background technology
Silicon materials are most important and most widely used elemental semiconductorses in the semi-conductor industry, are the base mateirals of microelectronics industry and photovoltaic industry.Silicon materials have multiple crystalline form, comprise silicon single crystal, polysilicon.Because silicon single crystal has less, the more high advantage of light energy use efficiency of defective in the crystallization, it is widely used in the manufacturing process of solar cell.Based on production cost and product performance requirement, generally adopt pulling of crystals manufacturing process (Czochralski, CZ method) manufacture order crystal silicon at present in the industry.Single crystal growing furnace is a kind of in inert gas environment, with graphite heater with material melts such as polysilicons, with the equipment of pulling of crystals manufacturing process growth dislocation-free silicon single crystal.
As shown in Figure 1; Single crystal growing furnace cavity exhaust system of the prior art is in order to growing single-crystal silicon, and it comprises insulation cover A, guide shell B, quartz crucible G, is located at three lobe crucible Cs, well heater D, graphite pressure pin E, furnace hearth plate F and the heat-preservation cylinder H of the quartz crucible G outside with heat conduction.The said guide shell B rare gas element that growing single-crystal silicon is required imports in the quartz crucible G.See also shown in Figure 2; The airflow path of said single crystal growing furnace cavity exhaust system is: rare gas element under the guide shell to quartz crucible G; Crucible mouth through quartz crucible G continues toward dirty at the bottom of the crucible of quartz crucible G again; Had silicon material volatile matter from the effusive rare gas element of quartz crucible G this moment; The rare gas element that has silicon material volatile matter then continues toward dirty and through three lobe crucible C and well heater D, arrive furnace hearth plate F through graphite pressure pin E then, at last below single crystal growing furnace cavity exhaust system near the venting port discharge of furnace hearth plate F.The shortcoming in this airflow path is: the chance of graphite device contacts such as the volatile matter in the increase silicon material and each well heater; Make the graphite devices such as well heater that touched to accelerate oxidation and corrosive speed, thereby shorten work-ing life, the increase production cost of graphite devices such as well heater.
Therefore, to above-mentioned technical problem, be necessary to provide a kind of structure improved single crystal growing furnace cavity exhaust system that has, to overcome above-mentioned defective.
The utility model content
In view of this; The utility model provides a kind of single crystal growing furnace cavity exhaust system; Through adopting double-deck hollow heat-preservation cylinder to change the airflow path of gas; Effectively the silicon material volatile matter in the minimizing gas and the chance of graphite device contacts are dwindled silicon material volatile matter to the graphite components from being damaged, prolong the work-ing life of graphite device.
For realizing above-mentioned purpose, the utility model provides following technical scheme:
A kind of single crystal growing furnace cavity exhaust system; Be used for growing single-crystal silicon; It comprises single crystal growing furnace cavity, insulation cover, guide shell, placement silicon material quartz crucible, be located at the quartz crucible outside with three lobe crucibles of heat conduction, the well heater that is used to heat three lobe crucibles, heat-preservation cylinder, graphite pressure pin and furnace hearth plate; Said single crystal growing furnace cavity is provided with the burner hearth venting port; Said heat-preservation cylinder comprises the mezzanine space between interior heat-preservation cylinder, outer heat-preservation cylinder and heat-preservation cylinder and the outer heat-preservation cylinder, and said interior heat-preservation cylinder is provided with the some ventilating pits near insulation cover.
Preferably, in above-mentioned single crystal growing furnace cavity exhaust system, said outer heat-preservation cylinder is provided with the following venting port corresponding with burner hearth venting port position, and said following venting port is greater than the burner hearth venting port, and said gas is directly from descending venting port to flow to the burner hearth venting port and discharging.
Preferably, in above-mentioned single crystal growing furnace cavity exhaust system, said ventilating pit comprises 12 and along burner hearth axis one circle equational split.
Preferably, in above-mentioned single crystal growing furnace cavity exhaust system, said well heater is provided with suitable for reading near guide shell, said ventilating pit insulation cover and suitable for reading between.
Preferably, in above-mentioned single crystal growing furnace cavity exhaust system, the center of circle of said ventilating pit and suitable for reading between distance be 50mm.
Preferably, in above-mentioned single crystal growing furnace cavity exhaust system, the diameter of said ventilating pit is 30mm.
Preferably, in above-mentioned single crystal growing furnace cavity exhaust system, the width of said mezzanine space is 30mm.
Can find out from technique scheme; Among the utility model embodiment through adopting double-deck hollow heat-preservation cylinder to change the airflow path of gas; The silicon material volatile matter in effective minimizing gas and the chance of graphite device contacts; Dwindle silicon material volatile matter to the graphite components from being damaged, prolong the work-ing life of graphite device.
Description of drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is some embodiment of the utility model, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of single crystal growing furnace cavity exhaust system in the prior art;
Fig. 2 is the synoptic diagram in the airflow path of single crystal growing furnace cavity exhaust system among Fig. 1;
Fig. 3 is the structural representation of the utility model embodiment single crystal growing furnace cavity exhaust system;
Fig. 4 is the synoptic diagram in the airflow path of single crystal growing furnace cavity exhaust system among Fig. 3.
Embodiment
To combine the accompanying drawing among the utility model embodiment below, the technical scheme among the utility model embodiment is carried out clear, intactly description, obviously, described embodiment only is the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, the every other embodiment that those of ordinary skills are obtained under the prerequisite of not making creative work belongs to the scope that the utility model is protected.
The utility model discloses a kind of single crystal growing furnace cavity exhaust system; Through adopting double-deck hollow heat-preservation cylinder; Change the air current flow direction of traditional rare gas element; Thereby reach silicon material volatile matter and the chance of graphite device contacts in effective minimizing rare gas element, dwindle silicon material volatile matter, prolong the work-ing life of graphite device the graphite components from being damaged.
See also shown in Figure 3ly, the utility model single crystal growing furnace cavity exhaust system is in order to growing single-crystal silicon under the environment of rare gas element.The effect of said rare gas element is a volatile matter of taking away the silicon material.So in the process of growth of silicon single crystal, have rare gas element and be introduced in the single crystal growing furnace cavity exhaust system always.In this embodiment, the axis direction of single crystal growing furnace is defined as above-below direction.
See also shown in Figure 3ly, said single crystal growing furnace cavity exhaust system comprises single crystal growing furnace cavity 100, insulation cover 1, heat-preservation cylinder 2, guide shell 3, place quartz crucible 4, the three lobe crucibles 5 of silicon material, the well heater 6 that is used to heat three lobe crucibles 5, two groups of Graphite Electrodess 7, graphite pressure pin 8 and furnace hearth plates 9.Said single crystal growing furnace cavity 100 is provided with the burner hearth venting port.
The excircle of said insulation cover 1 and single crystal growing furnace cavity 100 inwalls seal.Sealing effectiveness between the inner chamber of said insulation cover 1 and single crystal growing furnace cavity 100 can be realized through sealing-ring, guarantees that both contact surface sealings are firm, blocks the gas passage, stops rare gas element to flow downward thus, makes rare gas element from guide shell, pass through.
Said heat-preservation cylinder 2 is double-deck hollow form.Said heat-preservation cylinder 2 comprises that the confession between interior heat-preservation cylinder 21, outer heat-preservation cylinder 22 and heat-preservation cylinder 21 and the outer heat-preservation cylinder 22 contains the mezzanine space that the rare gas element of silicon material volatile matter passes through.Heat-preservation cylinder 21 upper ends are provided with the ventilating pit 211 that some and outer heat-preservation cylinder 22 is communicated with in said.Said ventilating pit 211 is near guide shell 3 and be positioned at the top of well heater 6.Said ventilating pit comprises that 12 and diameter are 30mm.Said 12 ventilating pits are along single crystal growing furnace axis one circle equational split.Said well heater 6 is provided with and is positioned at an end and the end opening that is connected with furnace hearth plate 9 and is positioned at the suitable for reading of the other end.Distance between the center of circle of said 12 ventilating pits and well heater 6 suitable for reading is 50mm.Said well heater 6 suitable for reading near guide shell 3.Said outer heat-preservation cylinder is provided with the following venting port corresponding with burner hearth venting port position; Said burner hearth venting port is all circular hole with following venting port; The position of said venting port down makes the rare gas element that has silicon material volatile matter directly to flow to the burner hearth venting port from following venting port over against the burner hearth venting port.Said venting port down is greater than the burner hearth venting port, and the diameter of said circular hole is than the big 10mm of diameter of burner hearth venting port, and the rare gas element that makes major part have silicon material volatile matter can directly discharge and can not be trapped in the single crystal growing furnace cavity exhaust system from the burner hearth venting port.Said rare gas element is directly from descending venting port to flow to the burner hearth venting port and discharging.The width of the mezzanine space that forms between heat-preservation cylinder 21 and the outer heat-preservation cylinder 22 in said is 30mm, and setting like this makes things convenient for the timely and effective discharge single crystal growing furnace of rare gas element cavity exhaust system and can not be trapped in the outer heat-preservation cylinder 22.
See also shown in Figure 4; The airflow path of said single crystal growing furnace cavity exhaust system is: rare gas element from guide shell 3 times to quartz crucible 4; Crucible mouth through quartz crucible 4 flows in the ventilating pit 221 at the bottom of the crucible of quartz crucible 4 again; Had silicon material volatile matter from quartz crucible 4 effusive rare gas elementes this moment; The rare gas element that has silicon material volatile matter then flows in the mezzanine space through ventilating pit 221, has the following venting port of rare gas element heat-preservation cylinder 22 outside mezzanine space flows to of silicon material volatile matter downwards, because venting port is corresponding with the burner hearth venting port near furnace hearth plate 9 and position down; The rare gas element that has silicon material volatile matter directly flows to the burner hearth venting port from following venting port, discharges single crystal growing furnace cavity exhaust system through the burner hearth venting port at last.So be provided with; The rare gas element that major part contains silicon material volatile matter just can not pass through well heater 6 devices such as graphite such as grade, so is provided with, through adopting double-deck hollow heat-preservation cylinder 2; Change the air current flow direction of traditional rare gas element; Thereby reach silicon material volatile matter and the chance of graphite device contacts in effective minimizing rare gas element, dwindle silicon material volatile matter, prolong the work-ing life of graphite device the graphite components from being damaged.
Said guide shell 3 is that the rare gas element that growing single-crystal silicon is required imports the passage in the quartz crucible 4, also is the space of shaping single crystal.In actual moulding process, be young brilliant to send into 4 li of quartz crucibles, and stick together that add man-hour, wireline up draws young brilliant with silicon feed liquid body through wireline with one, can formations after pulling need monocrystalline.The end of said guide shell 3, just the lower end of guide shell 3 extend into the crucible mouth place of quartz crucible 4, but not with the contact of silicon feed liquid surface.There is certain clearance between said guide shell 3 and the silicon feed liquid body.Said gap provides young brilliant crystal pulling space, bonding crystal silicon yield rate.
Said three lobe crucibles 5 are located at quartz crucible 4 outsides.Said three lobe crucibles 5 have two effects, and first effect is to quartz crucible 4 heat conduction, the effect of promptly conducting heat; Second effect is to be heated when reaching the melt temperature deliquescing when quartz crucible 4, can hold quartz crucible 4, guarantees the shape of quartz crucible 4, prevents quartz crucible 4 distortion, promptly plays the effect of holder crucible.
Respectively be provided with a graphite screw 71 on said two groups of Graphite Electrodess 7, said well heater 6 is fixed on the Graphite Electrodes 7 through graphite screw 71.
Said graphite pressure pin 8 is transmission rigs.Said quartz crucible 4 and three lobe crucibles 5 are installed on the graphite pressure pin 8.The utility model is realized the position adjustment of three lobe crucibles 5 and quartz crucible 4 through graphite pressure pin 8; Because when moulding silicon single crystal; Young crystalline substance can siphon away the silicon liquid in the quartz crucible 4, makes silicon feed liquid face sink, so the distance in order to guarantee that silicon feed liquid face and guide shell 3 belows are terminal; The moulding of bonding crystal silicon is so be provided with this graphite pressure pin 8.Said graphite pressure pin 8 is the while rotation and lifting along the vertical direction, realizes the adjusting that silicon feed liquid face and guide shell 3 below end-to-end distances leave.
Said furnace hearth plate 9 is bottoms of whole single crystal growing furnace cavity exhaust system.Each element begins to install from furnace hearth plate 9 earlier.
The utility model changes the air current flow direction of traditional rare gas element through adopting double-deck hollow heat-preservation cylinder 2, makes minimizing contain graphite device contacts such as rare gas element and the well heater 6 of volatile matter, has prolonged the life-span of well heater 6 devices such as graphite such as grade greatly.
The single crystal growing furnace cavity exhaust system of the utility model; The flow direction of rare gas element when having changed crystal pulling; Make rare gas element from guide shell 3 times to quartz crucible 4; Crucible mouth through quartz crucible 4 flows in the ventilating pit 221 at the bottom of the crucible of quartz crucible 4 again, and had silicon material volatile matter from quartz crucible 4 effusive rare gas elementes this moment, and the rare gas element that has silicon material volatile matter then flows in the mezzanine space through ventilating pit 221; The following venting port that has rare gas element heat-preservation cylinder 22 outside mezzanine space flows to of silicon material volatile matter downwards; Because following venting port is corresponding with the burner hearth venting port near furnace hearth plate 9 and position, the rare gas element that has silicon material volatile matter directly flows to the burner hearth venting port from following venting port, discharges through the burner hearth venting port at last; Reduce to have the chance of the graphite device contacts such as rare gas element and well heater 6 of volatile matter, prolonged the life-span of well heater 6 devices such as graphite such as grade.
Principle of work is: rare gas element gets in the quartz crucible 4 through guide shell 3; Can discharge some volatile matters along with rare gas element together flow in the silicon material this moment; Single crystal growing furnace cavity exhaust system inner chamber inside is by feasible rare gas element ventilating pit 211 motions of the top of heat-preservation cylinder 21 inwardly that contain volatile matter of the effect of vacuum pump; And through ventilating pit 211 flow out enter in the mezzanine space of heat-preservation cylinder 21 and outer heat-preservation cylinder 22; The following venting port that contains rare gas element heat-preservation cylinder 22 outside mezzanine space flows down to of volatile matter; Because following venting port is corresponding with burner hearth venting port position, directly enter the burner hearth venting port so contain the rare gas element of volatile matter by following venting port, discharge single crystal growing furnace cavity 100 through the burner hearth venting port at last.
The utility model single crystal growing furnace cavity exhaust system adopts double-deck hollow heat-preservation cylinder to change the airflow path of rare gas element; The silicon material volatile matter in effective minimizing rare gas element and the chance of graphite device contacts; Dwindle silicon material volatile matter to the graphite components from being damaged, prolong the work-ing life of graphite device; Effectively control the disadvantageous effect of bringing to crystal pulling because volatile matter is detained in single crystal growing furnace cavity 100 inside besides, thereby improve crystal pulling yield rate and output.
The utility model single crystal growing furnace cavity exhaust system is provided with ventilating pit 221 above interior heat-preservation cylinder 21; In the rare gas element that contains silicon material volatile matter flows to from ventilating pit 221 heat-preservation cylinder 21 and outside in the mezzanine space between the heat-preservation cylinder 22; Down conduct flows directly to the burner hearth venting port by following venting port then to the following venting port of outer heat-preservation cylinder 22 then, discharges through the burner hearth venting port at last; So be provided with; Reduced to contain the chance of the graphite device contacts such as rare gas element and well heater 6 of silicon material volatile matter, dwindled silicon material volatile matter, prolonged the work-ing life of graphite device the graphite components from being damaged.
The utility model single crystal growing furnace cavity exhaust system outside heat-preservation cylinder 22 that diameter is set is more corresponding with the burner hearth venting port than following venting port and the position of the big 10mm of burner hearth venting port; The width of the mezzanine space that forms between heat-preservation cylinder 21 and the outer heat-preservation cylinder 22 in said is 30mm; So be provided with; Make rare gas element can be directly flow to the burner hearth venting port, make things convenient for the timely and effective discharge single crystal growing furnace of rare gas element cavity exhaust system and can not be trapped in the outer heat-preservation cylinder 22 from venting port down.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the utility model.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined General Principle can realize under the situation of spirit that does not break away from the utility model or scope in other embodiments among this paper.Therefore, the utility model will can not be restricted to these embodiment shown in this paper, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (7)
1. single crystal growing furnace cavity exhaust system; Be used for growing single-crystal silicon; It comprises single crystal growing furnace cavity, insulation cover, guide shell, placement silicon material quartz crucible, be located at the quartz crucible outside with three lobe crucibles of heat conduction, the well heater that is used to heat three lobe crucibles, heat-preservation cylinder, graphite pressure pin and furnace hearth plate; Said single crystal growing furnace cavity is provided with the burner hearth venting port; It is characterized in that: said heat-preservation cylinder comprises the mezzanine space between interior heat-preservation cylinder, outer heat-preservation cylinder and heat-preservation cylinder and the outer heat-preservation cylinder, and said interior heat-preservation cylinder is provided with the some ventilating pits near insulation cover.
2. single crystal growing furnace cavity exhaust system according to claim 1; It is characterized in that: said outer heat-preservation cylinder is provided with the following venting port corresponding with burner hearth venting port position; Said following venting port is greater than the burner hearth venting port, and said gas is directly from descending venting port to flow to the burner hearth venting port and discharging.
3. single crystal growing furnace cavity exhaust system according to claim 1 is characterized in that: said ventilating pit comprises 12 and along burner hearth axis one circle equational split.
4. single crystal growing furnace cavity exhaust system according to claim 1 is characterized in that: said well heater is provided with suitable for reading near guide shell, said ventilating pit insulation cover and suitable for reading between.
5. single crystal growing furnace cavity exhaust system according to claim 4 is characterized in that: the center of circle of said ventilating pit and suitable for reading between distance be 50mm.
6. single crystal growing furnace cavity exhaust system according to claim 1 is characterized in that: the diameter of said ventilating pit is 30mm.
7. single crystal growing furnace cavity exhaust system according to claim 1 is characterized in that: the width of said mezzanine space is 30mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120197832U CN202131392U (en) | 2011-06-13 | 2011-06-13 | Exhaust system of cavity of single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120197832U CN202131392U (en) | 2011-06-13 | 2011-06-13 | Exhaust system of cavity of single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202131392U true CN202131392U (en) | 2012-02-01 |
Family
ID=45520168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201120197832U Expired - Fee Related CN202131392U (en) | 2011-06-13 | 2011-06-13 | Exhaust system of cavity of single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202131392U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102618921A (en) * | 2012-04-11 | 2012-08-01 | 浙江金瑞泓科技股份有限公司 | Double-exhaust flat-plate epitaxial furnace |
| CN108179469A (en) * | 2018-02-13 | 2018-06-19 | 南京晶能半导体科技有限公司 | A kind of exhaust apparatus and single crystal growing furnace of semiconductor grade monocrystal stove |
| CN108375308A (en) * | 2018-03-30 | 2018-08-07 | 内江至诚铂业科技有限公司 | A kind of box efficient resistance furnace of automatically cleaning |
| CN112226811A (en) * | 2020-10-09 | 2021-01-15 | 西安邦泰电子技术有限公司 | Thermal field for single crystal furnace and single crystal furnace |
-
2011
- 2011-06-13 CN CN201120197832U patent/CN202131392U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102618921A (en) * | 2012-04-11 | 2012-08-01 | 浙江金瑞泓科技股份有限公司 | Double-exhaust flat-plate epitaxial furnace |
| CN102618921B (en) * | 2012-04-11 | 2015-06-03 | 浙江金瑞泓科技股份有限公司 | Double-exhaust flat-plate epitaxial furnace |
| CN108179469A (en) * | 2018-02-13 | 2018-06-19 | 南京晶能半导体科技有限公司 | A kind of exhaust apparatus and single crystal growing furnace of semiconductor grade monocrystal stove |
| CN108375308A (en) * | 2018-03-30 | 2018-08-07 | 内江至诚铂业科技有限公司 | A kind of box efficient resistance furnace of automatically cleaning |
| CN112226811A (en) * | 2020-10-09 | 2021-01-15 | 西安邦泰电子技术有限公司 | Thermal field for single crystal furnace and single crystal furnace |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN202131392U (en) | Exhaust system of cavity of single crystal furnace | |
| CN102131963B (en) | Apparatus and method for manufacturing ingot | |
| CN101906657B (en) | System for manufacturing single crystal ingot | |
| CN102877117A (en) | Ingot furnace thermal field structure based on multi-heater and operation method | |
| EP3760767A1 (en) | Ingot furnace for directional solidification growth of crystalline silicon and application | |
| CN202989351U (en) | Ingot furnace thermal field structure based on multiple heaters | |
| CN206157273U (en) | Novel single crystal growing furnace | |
| CN101851782A (en) | Double-cavity heat-insulation cage of second single crystal silicon ingot production furnace | |
| CN113502532A (en) | Device for simultaneously drawing multiple silicon cores by using crushed silicon materials | |
| CN109385662A (en) | The preparation method and class monocrystalline silicon piece of a kind of laying method of seed crystal, class monocrystal silicon | |
| CN204714943U (en) | A kind of polycrystalline ingot furnace argon purge guiding device | |
| CN203715787U (en) | Fed foreign gas removal device and ingot furnace thereof | |
| CN113481590A (en) | Cooling screen for simultaneously drawing multiple silicon cores by using crushed silicon materials | |
| CN206799790U (en) | Single crystal growing furnace | |
| CN202744660U (en) | Thermal field structure for ultra-large crystal grain ingot furnace | |
| CN102154683A (en) | Monocrystal/polycrystal directional solidification system of metal heating body structure | |
| CN203200374U (en) | Heat field structure of polycrystalline silicon ingot furnace | |
| CN219059205U (en) | Device for improving temperature of melt in middle of crucible in artificial crystal furnace | |
| CN215668282U (en) | Cooling screen for simultaneously drawing multiple silicon cores by using crushed silicon materials | |
| CN203382848U (en) | High-efficient polycrystalline silicon ingot casting furnace with heat insulation protective plate | |
| CN115787071A (en) | Device for increasing melt temperature in middle of crucible in artificial crystal furnace | |
| CN215668281U (en) | Cooling device for simultaneously drawing multiple silicon cores by using crushed silicon materials | |
| CN210886316U (en) | Polysilicon ingot casting thermal field heat insulation cage | |
| CN101319351B (en) | Monocrystalline growing furnace | |
| CN102912416A (en) | Novel polycrystalline furnace heating device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120201 Termination date: 20150613 |
|
| EXPY | Termination of patent right or utility model |