CN202084527U - Novel transistor structure - Google Patents
Novel transistor structure Download PDFInfo
- Publication number
- CN202084527U CN202084527U CN201120194982.4U CN201120194982U CN202084527U CN 202084527 U CN202084527 U CN 202084527U CN 201120194982 U CN201120194982 U CN 201120194982U CN 202084527 U CN202084527 U CN 202084527U
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- type material
- utmost point
- electric conductor
- point electric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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Abstract
The utility model discloses a novel transistor structure, which comprises a P type material and an N type material, from which a transistor is made. The novel transistor structure is characterized in that: when the electron outflow end of the transistor is one end of the P type material, the end of the P type material is connected with one end of a P pole conductive body, the other end of the P pole conductive body is connected with one electrode of an output N type material, and the other electrode of the output N type material is connected with one lead. When the electron inflow end of the transistor is one end of the N type material, the end of the N type material is connected with one end of an N pole conductive body, the other end of the N pole conductive body is connected with one electrode of an output P type material, and the other electrode of the output P type material is connected with the other lead. Compared with the prior art, the novel transistor structure has the advantages of active radiation, good radiation effects and small environmental influence.
Description
Technical field
The utility model relates to a kind of transistorized structure.
Background technology
Existing transistor, no matter be triode, diode or light-emitting diode, all constitute by P-type material and n type material, electronics can produce a large amount of heat energy by n type material in the process of P-type material migration, if these heat energy can not in time distribute, can cause the impaired destruction of transistor, for this reason, people are provided with heating panel on transistor, so that heat energy is distributed.This kind radiating mode is owing to be passive heat radiation, and radiating effect is not fine, higher to environmental requirement, if during for the higher environment of temperature, radiating effect will be subjected to very big influence.
Summary of the invention
Goal of the invention of the present utility model be to provide a kind of have active heat removal, good heat dissipation effect, little novel transistor affected by environment structure.
The utility model is to realize like this, the P-type material and the n type material that comprise transistor formed, when its special feature is that transistorized electronics outflow end is a wherein end of P-type material, this of P-type material wherein an end and P utmost point electric conductor wherein an end be connected, the other end of P utmost point electric conductor is connected with a wherein utmost point of output n type material, output n type material another utmost point with wherein one the lead-in wire link to each other, transistorized electronics flows into to be held when being a wherein end of n type material, this of n type material wherein an end and N utmost point electric conductor wherein an end be connected, the other end of N utmost point electric conductor is connected with a wherein utmost point of output P-type material, and another utmost point of output P-type material links to each other with another lead-in wire.During use, electric current is by wherein going between by the output P-type material, N utmost point electric conductor, n type material, P-type material, flow out from another lead-in wire behind the P utmost point electric conductor output n type material, electronics can produce a large amount of heat energy by n type material in the process of P-type material migration, simultaneously, according to Peltier effect (handkerchief pastes that effect), because the electron energy level of n type material is than the electron energy level height of P-type material, electronics can absorb a large amount of heat energy by electric conductor by P-type material in the process of n type material migration, because heat absorption is initiatively heat absorption, therefore, good heat dissipation effect is subjected to the influence of environment little.
In order further to promote radiating effect, P-type material and n type material are fixed on the heating panel.Like this, can realize the location of P-type material and n type material, simultaneously, the radiating effect in the time of promoting transistor work again.Heating panel is the insulating radiation plate, and the insulating radiation plate is arranged on that side of N utmost point electric conductor of P utmost point electric conductor, the n type material of P-type material.Like this, just can utilize the thermal conductive resin of P utmost point electric conductor, N utmost point electric conductor, insulating radiation plate that electronics is gone out and drawn when n type material moves by electric conductor by P-type material by electronics by a large amount of thermal energy conduction that n type material is produced in the process of P-type material migration.
Here, each one of P-type material and n type material constitute diode, and further, P-type material and n type material constitute light-emitting diode.
Two of P-type materials, one of n type material constitutes triode, and perhaps P-type material is one, and two of n type materials constitute triode.
The utility model compared with the prior art, have active heat removal, good heat dissipation effect, little advantage affected by environment.
Description of drawings:
Fig. 1 is the structural representation of the utility model embodiment 1;
Fig. 2 is the structural representation of the utility model embodiment 2;
Fig. 3 is the structural representation of the utility model embodiment 3;
Fig. 4 is the structural representation of the utility model embodiment 4;
Fig. 5 is the structural representation of the utility model embodiment 5.
Embodiment:
Now in conjunction with the accompanying drawings and embodiments the utility model is done and is described in further detail:
Embodiment 1: as shown in Figure 1, the utility model comprises a P-type material 1 and n type material 2 that constitutes diode, the P-type material 1 that its special feature is the transistor positive pole and P utmost point electric conductor 3 wherein an end are connected, the other end of P utmost point electric conductor 3 is connected with a wherein utmost point of output n type material 4, another utmost point of output n type material 45 links to each other with a lead-in wire wherein, the n type material 2 that is positioned at the transistor negative pole and N utmost point electric conductor 6 wherein an end are connected, the other end of N utmost point electric conductor 6 is connected with a wherein utmost point of output P-type material 7, and another utmost point of output P-type material 7 links to each other with another lead-in wire 8.
As shown in Figure 2, embodiment 2 is on the basis of embodiment 1, and P-type material 1 and n type material 2 are fixed on the heating panel 9.P utmost point electric conductor, N utmost point electric conductor are positioned at transistorized the same side, and heating panel 9 is insulating radiation plates, and insulating radiation plate 9 is fixed on P utmost point electric conductor, the N utmost point electric conductor.
Embodiment 3: as shown in Figure 3, the utility model comprises a big P-type material 1 that constitutes light-emitting diode and a little n type material 2 that is connected on the big P-type material 1, the P-type material 1 that its special feature is the transistor positive pole and P utmost point electric conductor 3 wherein an end are connected, the other end of P utmost point electric conductor 3 is connected with a wherein utmost point of output n type material 4, another utmost point of output n type material 45 links to each other with a lead-in wire wherein, the n type material 2 that is positioned at the transistor negative pole and N utmost point electric conductor 6 wherein an end are connected, the other end of N utmost point electric conductor 6 is connected with a wherein utmost point of output P-type material 7, another utmost point of output P-type material 7 links to each other with another lead-in wire 8, P utmost point electric conductor 3, N utmost point electric conductor 6 is positioned at transistorized relative both sides, and insulating radiation plate 9 is connected P utmost point electric conductor 3, on the output P-type material 7.
Embodiment 4: as scheming: shown in 4, the utility model comprises two P-type materials 1 and n type material 2 that constitutes triode, its special feature be triode emitter P-type material 1 and P utmost point electric conductor 3 wherein an end be connected, the other end of P utmost point electric conductor 3 is connected with a wherein utmost point of output n type material 4, another utmost point of output n type material 45 links to each other with a lead-in wire wherein, the n type material 2 of base stage and N utmost point electric conductor 6 wherein an end are connected, the other end of N utmost point electric conductor 6 is connected with a wherein utmost point of output P-type material 7, another utmost point of output P-type material 7 links to each other with another lead-in wire 8, the P-type material 1 of collector electrode links to each other with the 3rd lead-in wire 10, and insulating radiation plate 9 is connected on the triode of P utmost point electric conductor 3 and P utmost point electric conductor 3 those sides.
Embodiment 5: as shown in Figure 5, the utility model comprises a P-type material 1 and two n type materials 2 that constitute triode, its special feature be triode collector electrode n type material 1 and N utmost point electric conductor 6 wherein an end be connected, the other end of N utmost point electric conductor 6 is connected with a wherein utmost point of output P-type material 7, another utmost point of output P-type material 7 links to each other with another lead-in wire 8, the P-type material 1 of base stage and P utmost point electric conductor 3 wherein an end are connected, the other end of P utmost point electric conductor 3 is connected with a wherein utmost point of output n type material 4, another utmost point of output n type material 45 links to each other with a lead-in wire wherein, the n type material 2 of emitter links to each other with the 3rd lead-in wire 10, and insulating radiation plate 9 is connected on the triode of N utmost point electric conductor 6 and N utmost point electric conductor 6 those sides.
Claims (7)
1. a novel transistor is constructed, the P-type material and the n type material that comprise transistor formed, when it is characterized in that transistorized electronics outflow end is a wherein end of P-type material, this of P-type material wherein an end and P utmost point electric conductor wherein an end be connected, the other end of P utmost point electric conductor is connected with a wherein utmost point of output n type material, another utmost point of output n type material with wherein one go between and to link to each other; Transistorized electronics flows into to be held when being a wherein end of n type material, this of n type material wherein an end and N utmost point electric conductor wherein an end be connected, the other end of N utmost point electric conductor is connected with a wherein utmost point of output P-type material, and another utmost point of output P-type material links to each other with another lead-in wire.
2. novel transistor structure according to claim 1 is characterized in that P-type material and n type material are fixed on the heating panel.
3. novel transistor according to claim 2 structure is characterized in that heating panel is the insulating radiation plate, and the insulating radiation plate is arranged on that side of N utmost point electric conductor of P utmost point electric conductor, the n type material of P-type material.
4. novel transistor structure according to claim 3 is characterized in that each one of P-type material and n type material, constitutes diode.
5. novel transistor structure according to claim 4 is characterized in that diode is a light-emitting diode.
6. novel transistor structure according to claim 5, the P-type material that it is characterized in that constituting light-emitting diode is big P-type material, n type material is the little n type material that is connected on the big P-type material, P utmost point electric conductor, N utmost point electric conductor are positioned at transistorized relative both sides, and the insulating radiation plate is connected on P utmost point electric conductor, the output P-type material; The n type material that perhaps constitutes light-emitting diode is big n type material, P-type material is the little P-type material that is connected on the big n type material, N utmost point electric conductor, P utmost point electric conductor are positioned at transistorized relative both sides, and the insulating radiation plate is connected on N utmost point electric conductor, the output n type material.
7. novel transistor structure according to claim 1 and 2, it is characterized in that two of P-type materials, one of n type material, constitute triode, the P-type material of the emitter of triode and P utmost point electric conductor wherein an end are connected, the other end of P utmost point electric conductor is connected with a wherein utmost point of output n type material, output n type material another utmost point with wherein one the lead-in wire link to each other, the n type material of base stage and N utmost point electric conductor wherein an end are connected, the other end of N utmost point electric conductor is connected with a wherein utmost point of output P-type material, another utmost point of output P-type material links to each other with another lead-in wire, the P-type material of collector electrode links to each other with the 3rd lead-in wire, and the insulating radiation plate is connected on the triode of P utmost point electric conductor and that side of P utmost point electric conductor; Perhaps P-type material is one, two of n type materials, constitute triode, the n type material of the collector electrode of triode and N utmost point electric conductor wherein an end are connected, the other end of N utmost point electric conductor is connected with a wherein utmost point of output P-type material, another utmost point of output P-type material links to each other with another lead-in wire, the P-type material of base stage and P utmost point electric conductor wherein an end are connected, the other end of P utmost point electric conductor is connected with a wherein utmost point of output n type material, output n type material another utmost point with wherein one the lead-in wire link to each other, the n type material of emitter links to each other with the 3rd lead-in wire, and the insulating radiation plate is connected on the triode of N utmost point electric conductor and that side of N utmost point electric conductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120194982.4U CN202084527U (en) | 2011-06-10 | 2011-06-10 | Novel transistor structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120194982.4U CN202084527U (en) | 2011-06-10 | 2011-06-10 | Novel transistor structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202084527U true CN202084527U (en) | 2011-12-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201120194982.4U Expired - Lifetime CN202084527U (en) | 2011-06-10 | 2011-06-10 | Novel transistor structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202084527U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102226990A (en) * | 2011-06-10 | 2011-10-26 | 黎祥英 | Novel transistor construction |
| RU2487436C1 (en) * | 2012-02-03 | 2013-07-10 | Федеральное Государственное Бюджетное Образовательное Учреждение "Дагестанский Государственный Технический Университет" (Дгту) | Light transistor |
-
2011
- 2011-06-10 CN CN201120194982.4U patent/CN202084527U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102226990A (en) * | 2011-06-10 | 2011-10-26 | 黎祥英 | Novel transistor construction |
| RU2487436C1 (en) * | 2012-02-03 | 2013-07-10 | Федеральное Государственное Бюджетное Образовательное Учреждение "Дагестанский Государственный Технический Университет" (Дгту) | Light transistor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20111221 Effective date of abandoning: 20130417 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20111221 Effective date of abandoning: 20130417 |
|
| RGAV | Abandon patent right to avoid regrant |