CN202030855U - Mono-crystal furnace thermal field capable of increasing growth rate of mono-crystal furnace - Google Patents
Mono-crystal furnace thermal field capable of increasing growth rate of mono-crystal furnace Download PDFInfo
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- CN202030855U CN202030855U CN2011200679777U CN201120067977U CN202030855U CN 202030855 U CN202030855 U CN 202030855U CN 2011200679777 U CN2011200679777 U CN 2011200679777U CN 201120067977 U CN201120067977 U CN 201120067977U CN 202030855 U CN202030855 U CN 202030855U
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- single crystal
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Abstract
The utility model relates to the technical field of solar-powered mono-crystal furnace thermal fields, in particular to a mono-crystal furnace thermal field capable of increasing the growth rate of a mono-crystal furnace. The mono-crystal furnace thermal field comprises a thermal screen, wherein a section of tapered barrel-shaped cooler is arranged on the inner side of the thermal screen, is tightly attached to the inner side of the thermal screen, has the same taper as the inner side of the thermal screen, and is connected to a furnace barrel through a connecting pipe; the cooling medium inlet and outlet of the cooler are arranged on the furnace barrel; a cooling medium enters the cooler through the cooling medium inlet and outlet along the connecting pipe for cooling; the furnace barrel is a section of independent auxiliary furnace barrel; and the cooling medium inlet and outlet are provided with flow regulating valves. The thermal field has a reasonable structural design; the possibility of leakage existing in the process of conveying between the cooling medium and the cooler is eliminated; and the cooling effect on a crystal bar is enhanced by adopting a cooling device in the thermal field, so that the longitudinal temperature gradient of the crystal bar is increased, the growth rate of silicon mono-crystal is increased, and the aim of making a mono-crystal silicon bar grow quickly is fulfilled.
Description
Technical field
The utility model relates to solar energy single crystal stove thermal field technical field, particularly a kind of thermal field of single crystal furnace that improves the single crystal growing furnace speed of growth.
Background technology
Patent about thermal field of single crystal furnace is a lot, comprises aspects such as reducing thermal field energy consumption, optimization exhaust and optimization temperature of thermal field gradient.Also promising raising monocrystalline thermal field longitudinal temperature gradient and the compound heat shielding device invented.With the privileged sites of different modes in thermal field refrigerating unit is set, thereby reinforcement improves the crystalline speed of growth to the heat radiation of crystal bar to improve the crystal longitudinal temperature gradient, but face problem how to transmit heat-eliminating medium, because of cooling unit usually in crystal furnace inside, and mostly be active units, often there is the potential safety hazard of leakage in the transmission between cooling liqs and the cooling unit.And the conveying of cooling fluid proposes special requirement to furnace binding.200910099830.3 propose a kind of vertical pulling silicon single crystal stove that has water-cooling jacket, can strengthen the cooling performance of silicon single crystal rod to a certain extent, but cool position is bigger from the crystal growth interface distance, and is not obvious to the cooling performance of crystal bar, for improving the crystal growth amplitude certain limitation arranged.
The utility model content
Technical problem to be solved in the utility model is: a kind of rational in infrastructure, thermal field of single crystal furnace that can improve the single crystal growing furnace speed of growth is provided.
The technical scheme that its technical problem that solves the utility model adopts is: a kind of thermal field of single crystal furnace that improves the single crystal growing furnace speed of growth comprises heat shielding, at the additional one section water cooler with tubular of tapering in the inboard of heat shielding.
Water cooler and be close to the heat shielding inboard has identical tapering with the heat shielding inboard.
Water cooler is connected on the stove tube by pipe connecting, and the heat-eliminating medium of water cooler is imported and exported and all is arranged on the stove tube, and heat-eliminating medium is imported and exported and entered water cooler along pipe connecting by heat-eliminating medium and cools off.
The stove tube is one section independently secondary stove tube.
The height of water cooler accounts for 40%～80% of heat shielding height overall, and the lower end is 20～300mm apart from the height of heat shielding lower edge.
Heat-eliminating medium is provided with flow control valve on importing and exporting.
The beneficial effects of the utility model are: water cooler is connected one with secondary stove tube, is convenient to dismounting and maintenance.This thermal field of single crystal furnace reasonable in design, there is the possibility of leaking in the transmittance process of having stopped between heat-eliminating medium and the water cooler, and in long brilliant process, the silicon single crystal rod temperature of just having finished growth and close liquid level is up to thousands of degrees centigrade, and cooler surface is because the effect of heat-eliminating medium keeps lower temperature, the intensive heat exchange takes place because of temperature difference great disparity in both, reinforcement is to the cooling performance of crystal bar, thereby strengthen the crystal bar longitudinal temperature gradient, improve the speed of growth of silicon single-crystal, reach the purpose of quick growing single-crystal silicon rod.When common thermal field drew the 6in silicon single crystal rod, the speed of growth was generally at 1.0～1.2mm/min, and the thermal field of application this programme, the crystalline speed of growth can reach more than the 1.5mm/min.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further specified;
Fig. 1 is the structural representation of thermal field of the present utility model;
Fig. 2 is the vertical view of water cooler of the present utility model and secondary stove tube;
Among the figure, 1. water cooler, 2. pipe connecting, 3. secondary stove tube, 4. flow control valve, 5. main stove tube, 6. heat shielding, 7. thermal insulation layer, 8. single crystal rod.
Embodiment
As illustrated in fig. 1 and 2, a kind of thermal field of single crystal furnace that improves the single crystal growing furnace speed of growth comprises heat shielding 6, at the additional one section water cooler 1 with tubular of tapering in the inboard of heat shielding 6.The heat-eliminating medium of this water cooler 1 is a water, be connected one section independently the stove tube be on the secondary stove tube 3, the import and export of water coolant all are arranged on secondary stove tube 3 outer edges, and link to each other with water cooler 1.When crystal pulling, at first the graphite piece of thermal field is installed according to old process, after will have the secondary stove tube of water cooler 1, be installed on the main stove tube 5, by steady brace guarantee thermal field to neutrality.Has thermal insulation layer 7 in the stove tube.In the table operational process, remaining in the water cooler 1 has water coolant to pass through.In the long brilliant process, the lower and single crystal rod 8 high temperature section generation heat exchanges because of the cooler surface temperature, thereby reduce the temperature of single crystal rod 8, improve single crystal rod 8 longitudinal temperature gradients, thereby can improve the speed of growth of silicon single-crystal, reach the purpose of quick growing single-crystal silicon rod.Flow control valve 4 by regulating water cooler can controlled chilling liquid flow, promptly control speed of cooling to single crystal rod 8, reach the purpose of control crystalline growth velocity.
Embodiment one:
The utility model is applied on homemade certain type 800 single crystal growing furnace 20in thermal field, charging 70kg, when drawing the 6in silicon single crystal rod, the speed of growth is 1.52mm/min, and the table of equal model is used common thermal field, when drawing the 6in silicon single crystal rod, the pulling rate optimum regime only is 1.15mm/min.
Embodiment two:
The utility model is applied on homemade certain type 850 single crystal growing furnace, and for the 22in thermal field, charging 120kg when drawing the 8in silicon single crystal rod, uses thermal field of the present utility model and draws scooter 1.3mm/min, compares common thermal field and improves more than 30%.Use thermal field of the present utility model and can reduce by about 1/4th crystal growth time.
Claims (6)
1. the thermal field of single crystal furnace that can improve the single crystal growing furnace speed of growth comprises heat shielding (6), it is characterized in that: at the additional one section water cooler (1) with tubular of tapering in the inboard of described heat shielding (6).
2. the thermal field of single crystal furnace that improves the single crystal growing furnace speed of growth according to claim 2 is characterized in that: described water cooler (1) and be close to heat shielding (6) inboard has identical tapering with heat shielding (6) inboard.
3. the thermal field of single crystal furnace that improves the single crystal growing furnace speed of growth according to claim 1 and 2, it is characterized in that: described water cooler (1) is connected on the stove tube by pipe connecting (2), the heat-eliminating medium of water cooler (1) is imported and exported and all is arranged on the stove tube, and heat-eliminating medium is imported and exported and entered water cooler (1) along pipe connecting (2) by heat-eliminating medium and cools off.
4. the thermal field of single crystal furnace that improves the single crystal growing furnace speed of growth according to claim 3 is characterized in that: described stove tube is one section independently secondary stove tube (3).
5. the thermal field of single crystal furnace that improves the single crystal growing furnace speed of growth according to claim 1 and 2 is characterized in that: the height of described water cooler (1) accounts for 40%～80% of heat shielding (6) height overall, and the lower end is 20～300mm apart from the height of heat shielding (6) lower edge.
6. the thermal field of single crystal furnace that improves the single crystal growing furnace speed of growth according to claim 3 is characterized in that: described heat-eliminating medium is provided with flow control valve (4) on importing and exporting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200679777U CN202030855U (en) | 2011-03-16 | 2011-03-16 | Mono-crystal furnace thermal field capable of increasing growth rate of mono-crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200679777U CN202030855U (en) | 2011-03-16 | 2011-03-16 | Mono-crystal furnace thermal field capable of increasing growth rate of mono-crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202030855U true CN202030855U (en) | 2011-11-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200679777U Expired - Fee Related CN202030855U (en) | 2011-03-16 | 2011-03-16 | Mono-crystal furnace thermal field capable of increasing growth rate of mono-crystal furnace |
Country Status (1)
| Country | Link |
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| CN (1) | CN202030855U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107523869A (en) * | 2017-09-21 | 2017-12-29 | 浙江晶盛机电股份有限公司 | A kind of single crystal growing furnace can lift water cooling heat shield arrangement |
| CN115287745A (en) * | 2022-08-12 | 2022-11-04 | 曲靖晶澳光伏科技有限公司 | Single crystal furnace |
-
2011
- 2011-03-16 CN CN2011200679777U patent/CN202030855U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107523869A (en) * | 2017-09-21 | 2017-12-29 | 浙江晶盛机电股份有限公司 | A kind of single crystal growing furnace can lift water cooling heat shield arrangement |
| CN107523869B (en) * | 2017-09-21 | 2024-03-05 | 浙江晶盛机电股份有限公司 | Single crystal furnace device capable of lifting water-cooling heat shield |
| CN115287745A (en) * | 2022-08-12 | 2022-11-04 | 曲靖晶澳光伏科技有限公司 | Single crystal furnace |
| CN115287745B (en) * | 2022-08-12 | 2023-11-24 | 曲靖晶澳光伏科技有限公司 | Single crystal furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: TRINA SOLAR Co.,Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: trina solar Ltd. Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111109 Termination date: 20190316 |