CN102102219A - Cooling device capable of increasing growth rate of single crystal furnace - Google Patents
Cooling device capable of increasing growth rate of single crystal furnace Download PDFInfo
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- CN102102219A CN102102219A CN 201110062659 CN201110062659A CN102102219A CN 102102219 A CN102102219 A CN 102102219A CN 201110062659 CN201110062659 CN 201110062659 CN 201110062659 A CN201110062659 A CN 201110062659A CN 102102219 A CN102102219 A CN 102102219A
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Abstract
The invention relates to the technical field of solar single crystal furnace thermal field, in particular to a cooling device capable of increasing the growth rate of the single crystal furnace. The cooling device contains a cooler, wherein the cooler is a conical tube and arranged on the inside of the heat shield; the cooler closely sticks to the inside of the heat shield and has the same conical degree of the inside of the heat shield; the cooler is connected with the furnance tube through connecting pipes; the inlet and outlet of the cooling medium of the cooler are arranged on the furnance tube, and the cooling medium enters the cooler for cooling along the connecting pipes through the inlet and outlet of the cooling medium; the furnance tube is a section of independent assistant furnance tube; and the inlet and outlet of the cooling medium are provided with flow regulating valves. The cooling device of the invention has reasonable structural design and can avoid the posibility that the transfer between the cooling medium and the cooler seaks; and when the cooling device is used in a thermal field, the cooling effect of the crystal bar can be strengthened, thus the longitudinal temperature gradient of the crystal bar can be increased, the growth rate of silicon single crystal can be increased and the aim of rapidly growing the silicon single crystal rod can be achieved.
Description
Technical field
The present invention relates to solar energy single crystal stove thermal field technical field, particularly a kind of refrigerating unit that improves the single crystal growing furnace speed of growth.
Background technology
Patent about thermal field of single crystal furnace is a lot, comprises aspects such as reducing thermal field energy consumption, optimization exhaust and optimization temperature of thermal field gradient.Also promising raising monocrystalline thermal field longitudinal temperature gradient and the compound heat shielding device invented.With the privileged sites of different modes in thermal field refrigerating unit is set, thereby reinforcement improves the crystalline speed of growth to the heat radiation of crystal bar to improve the crystal longitudinal temperature gradient, but face problem how to transmit heat-eliminating medium, because of cooling unit usually in crystal furnace inside, and mostly be active units, often there is the potential safety hazard of leakage in the transmission between cooling liqs and the cooling unit.And the conveying of cooling fluid proposes special requirement to furnace binding.200910099830.3 propose a kind of vertical pulling silicon single crystal stove that has water-cooling jacket, can strengthen the cooling performance of silicon single crystal rod to a certain extent, but cool position is bigger from the crystal growth interface distance, and is not obvious to the cooling performance of crystal bar, for improving the crystal growth amplitude certain limitation arranged.
Summary of the invention
Technical problem to be solved by this invention is: a kind of rational in infrastructure, refrigerating unit that can improve the single crystal growing furnace speed of growth is provided.
The technical solution adopted for the present invention to solve the technical problems is: a kind of refrigerating unit that improves the single crystal growing furnace speed of growth, comprise water cooler, and water cooler is the tubular with tapering, is arranged on the heat shielding inboard.
Water cooler and be close to the heat shielding inboard has identical tapering with the heat shielding inboard.
Water cooler is connected on the stove tube by pipe connecting, and the heat-eliminating medium of water cooler is imported and exported and all is arranged on the stove tube, and heat-eliminating medium is imported and exported and entered water cooler along pipe connecting by heat-eliminating medium and cools off.
The stove tube is one section independently secondary stove tube.
The height of water cooler accounts for 40%～80% of heat shielding height overall, and the lower end is 20～300mm apart from the height of heat shielding lower edge.
Heat-eliminating medium is provided with flow control valve on importing and exporting.
The invention has the beneficial effects as follows: water cooler is connected one with secondary stove tube, is convenient to dismounting and maintenance.This refrigerating unit reasonable in design, there is the possibility of leaking in the transmittance process of having stopped between heat-eliminating medium and the water cooler, and after in thermal field, adopting this refrigerating unit, in long brilliant process, the silicon single crystal rod temperature of just having finished growth and close liquid level is up to thousands of degrees centigrade, and cooler surface is because the effect of heat-eliminating medium keeps lower temperature, the intensive heat exchange takes place because of temperature difference great disparity in both, reinforcement is to the cooling performance of crystal bar, thereby strengthen the crystal bar longitudinal temperature gradient, improve the speed of growth of silicon single-crystal, reach the purpose of quick growing single-crystal silicon rod.When common thermal field drew the 6in silicon single crystal rod, the speed of growth was generally at 1.0～1.2mm/min, and the thermal field of application this programme, the crystalline speed of growth can reach more than the 1.5mm/min.This refrigerating unit can be produced together in conjunction with new table, or can be applicable to the transformation to old table,
Description of drawings
The present invention is further described below in conjunction with drawings and Examples;
Fig. 1 is a vertical view of the present invention;
Fig. 2 is the application synoptic diagram of the present invention in thermal field of single crystal furnace;
Among the figure, 1. water cooler, 2. pipe connecting, 3. secondary stove tube, 4. flow control valve, 5. main stove tube, 6. heat shielding, 7. thermal insulation layer, 8. single crystal rod.
Embodiment
As illustrated in fig. 1 and 2, a kind of refrigerating unit that improves the single crystal growing furnace speed of growth comprises water cooler 1, and described water cooler 1 is arranged on heat shielding 6 inboards for having the tubular of tapering.The heat-eliminating medium of this water cooler 1 is a water, is connected one section independently on the stove tube, refers in particular to secondary stove tube 3, and the import and export of water coolant all are arranged on secondary stove tube 3 outer edges, and link to each other with water cooler 1.When crystal pulling, at first the graphite piece of thermal field is installed according to old process, after will have the secondary stove tube of water cooler 1, be installed on the main stove tube 5, by steady brace guarantee thermal field to neutrality.Has thermal insulation layer 7 in the stove tube.In the table operational process, remaining in the water cooler 1 has water coolant to pass through.In the long brilliant process, the lower and single crystal rod 8 high temperature section generation heat exchanges because of the cooler surface temperature, thereby reduce the temperature of single crystal rod 8, improve single crystal rod 8 longitudinal temperature gradients, thereby can improve the speed of growth of silicon single-crystal, reach the purpose of quick growing single-crystal silicon rod.Flow control valve 4 by regulating water cooler can controlled chilling liquid flow, promptly control speed of cooling to single crystal rod 8, reach the purpose of control crystalline growth velocity.
Embodiment one:
The present invention is applied on homemade certain type 800 single crystal growing furnace 20in thermal field, charging 70kg, when drawing the 6in silicon single crystal rod, the speed of growth is 1.52mm/min, and the table of equal model is used common thermal field, when drawing the 6in silicon single crystal rod, the pulling rate optimum regime only is 1.15mm/min.
Embodiment two:
The present invention is applied on homemade certain type 850 single crystal growing furnace, and for the 22in thermal field, charging 120kg when drawing the 8in silicon single crystal rod, uses thermal field of the present invention and draws scooter 1.3mm/min, compares common thermal field and improves more than 30%.Use thermal field of the present invention and can reduce by about 1/4th crystal growth time.
Claims (6)
1. refrigerating unit that can improve the single crystal growing furnace speed of growth is characterized in that: comprise water cooler (1), described water cooler (1) is arranged on heat shielding (6) inboard for having the tubular of tapering.
2. the refrigerating unit that improves the single crystal growing furnace speed of growth according to claim 2 is characterized in that: described water cooler (1) and be close to heat shielding (6) inboard has identical tapering with heat shielding (6) inboard.
3. the refrigerating unit that improves the single crystal growing furnace speed of growth according to claim 1 and 2, it is characterized in that: described water cooler (1) is connected on the stove tube by pipe connecting (2), the heat-eliminating medium of water cooler (1) is imported and exported and all is arranged on the stove tube, and heat-eliminating medium is imported and exported and entered water cooler (1) along pipe connecting (2) by heat-eliminating medium and cools off.
4. the refrigerating unit that improves the single crystal growing furnace speed of growth according to claim 3 is characterized in that: described stove tube is one section independently secondary stove tube (3).
5. the refrigerating unit that improves the single crystal growing furnace speed of growth according to claim 1 and 2 is characterized in that: the height of described water cooler (1) accounts for 40%～80% of heat shielding (6) height overall, and the lower end is 20～300mm apart from the height of heat shielding (6) lower edge.
6. the refrigerating unit that improves the single crystal growing furnace speed of growth according to claim 3 is characterized in that: described heat-eliminating medium is provided with flow control valve (4) on importing and exporting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110062659 CN102102219A (en) | 2011-03-16 | 2011-03-16 | Cooling device capable of increasing growth rate of single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110062659 CN102102219A (en) | 2011-03-16 | 2011-03-16 | Cooling device capable of increasing growth rate of single crystal furnace |
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| CN102102219A true CN102102219A (en) | 2011-06-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201110062659 Pending CN102102219A (en) | 2011-03-16 | 2011-03-16 | Cooling device capable of increasing growth rate of single crystal furnace |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103710742A (en) * | 2013-12-30 | 2014-04-09 | 上海涌真机械有限公司 | Single crystal furnace capable of improving czochralski-method single crystal growth speed |
| CN105316759A (en) * | 2014-07-02 | 2016-02-10 | 安徽旭特电子科技有限公司 | Coated heat shield having internal water cooling and used for single crystal furnace |
| CN106222735A (en) * | 2016-08-26 | 2016-12-14 | 内蒙古中环光伏材料有限公司 | Improve the device and method of pulling of silicon single crystal pulling rate |
| CN106435711A (en) * | 2016-09-27 | 2017-02-22 | 西安交通大学 | Single crystal furnace for achieving rapid crystal growth through chemical heat sink enhanced cooling technology |
| CN107012501A (en) * | 2017-03-29 | 2017-08-04 | 上海汉虹精密机械有限公司 | A kind of monocrystalline silicon growing furnace water cooling covering device |
| CN107604431A (en) * | 2016-07-11 | 2018-01-19 | 上海超硅半导体有限公司 | N-type monocrystalline silicon manufacturing method and apparatus |
| CN108950678A (en) * | 2017-05-19 | 2018-12-07 | 上海新昇半导体科技有限公司 | A kind of heat shielding component and single crystal pulling furnace thermal field structure with water-cooled jacket |
| CN110904498A (en) * | 2019-12-18 | 2020-03-24 | 西安奕斯伟硅片技术有限公司 | Guide cylinder for crystal pulling furnace and crystal pulling furnace |
Citations (5)
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|---|---|---|---|---|
| US6036776A (en) * | 1997-09-22 | 2000-03-14 | Komatsu Electronic Metals Co., Ltd. | Method and device for manufacturing single crystals |
| US20030150373A1 (en) * | 2000-09-26 | 2003-08-14 | Takayuki Kubo | Crystal growth method |
| US20030183163A1 (en) * | 2000-09-26 | 2003-10-02 | Takayuki Kubo | Crystal growing apparatus |
| US20040040491A1 (en) * | 2002-08-27 | 2004-03-04 | Hiroki Murakami | Silicon single crystal wafer for particle monitor |
| CN101148777A (en) * | 2007-07-19 | 2008-03-26 | 任丙彦 | Method and device for growing gallium-mixing silicon monocrystal by czochralski method |
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2011
- 2011-03-16 CN CN 201110062659 patent/CN102102219A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6036776A (en) * | 1997-09-22 | 2000-03-14 | Komatsu Electronic Metals Co., Ltd. | Method and device for manufacturing single crystals |
| US20030150373A1 (en) * | 2000-09-26 | 2003-08-14 | Takayuki Kubo | Crystal growth method |
| US20030183163A1 (en) * | 2000-09-26 | 2003-10-02 | Takayuki Kubo | Crystal growing apparatus |
| US20040040491A1 (en) * | 2002-08-27 | 2004-03-04 | Hiroki Murakami | Silicon single crystal wafer for particle monitor |
| CN101148777A (en) * | 2007-07-19 | 2008-03-26 | 任丙彦 | Method and device for growing gallium-mixing silicon monocrystal by czochralski method |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103710742A (en) * | 2013-12-30 | 2014-04-09 | 上海涌真机械有限公司 | Single crystal furnace capable of improving czochralski-method single crystal growth speed |
| CN105316759A (en) * | 2014-07-02 | 2016-02-10 | 安徽旭特电子科技有限公司 | Coated heat shield having internal water cooling and used for single crystal furnace |
| CN107604431A (en) * | 2016-07-11 | 2018-01-19 | 上海超硅半导体有限公司 | N-type monocrystalline silicon manufacturing method and apparatus |
| CN106222735A (en) * | 2016-08-26 | 2016-12-14 | 内蒙古中环光伏材料有限公司 | Improve the device and method of pulling of silicon single crystal pulling rate |
| CN106435711A (en) * | 2016-09-27 | 2017-02-22 | 西安交通大学 | Single crystal furnace for achieving rapid crystal growth through chemical heat sink enhanced cooling technology |
| CN106435711B (en) * | 2016-09-27 | 2019-04-12 | 西安交通大学 | Pass through the heat sink single crystal growing furnace strengthened cooling technology and realize rapid growth of crystal of chemistry |
| CN107012501A (en) * | 2017-03-29 | 2017-08-04 | 上海汉虹精密机械有限公司 | A kind of monocrystalline silicon growing furnace water cooling covering device |
| CN107012501B (en) * | 2017-03-29 | 2019-05-17 | 上海汉虹精密机械有限公司 | A kind of monocrystalline silicon growing furnace water cooling covering device |
| CN108950678A (en) * | 2017-05-19 | 2018-12-07 | 上海新昇半导体科技有限公司 | A kind of heat shielding component and single crystal pulling furnace thermal field structure with water-cooled jacket |
| CN110904498A (en) * | 2019-12-18 | 2020-03-24 | 西安奕斯伟硅片技术有限公司 | Guide cylinder for crystal pulling furnace and crystal pulling furnace |
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Application publication date: 20110622 |