CN110424050A - A kind of device lifting speed and heat dissipation suitable for large size single crystal - Google Patents
A kind of device lifting speed and heat dissipation suitable for large size single crystal Download PDFInfo
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- CN110424050A CN110424050A CN201910868501.4A CN201910868501A CN110424050A CN 110424050 A CN110424050 A CN 110424050A CN 201910868501 A CN201910868501 A CN 201910868501A CN 110424050 A CN110424050 A CN 110424050A
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- crystal
- monocrystalline
- refrigerating plant
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- 239000013078 crystal Substances 0.000 title claims abstract description 137
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 13
- 244000144985 peep Species 0.000 claims abstract description 57
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000002826 coolant Substances 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 239000007788 liquid Substances 0.000 claims description 41
- 239000007787 solid Substances 0.000 claims description 33
- 238000001816 cooling Methods 0.000 claims description 13
- 230000000007 visual effect Effects 0.000 claims description 5
- 241001149900 Fusconaia subrotunda Species 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 238000005057 refrigeration Methods 0.000 description 8
- 238000012546 transfer Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The present invention provides a kind of device that speed and heat dissipation are lifted suitable for large size single crystal, including refrigerating plant main body, inlet and outlet pipes, water inlet line is connect with refrigerating plant main body respectively with outlet conduit, it is logical in refrigerating plant main body inner recirculation flow convenient for cooling medium, wherein, refrigerating plant main body is equipped with multiple sight holes, and multiple sight holes are set gradually along mono-crystal furnace cover to crucible direction；And mono-crystal furnace cover is equipped with peep hole, multiple sight holes are set to refrigerating plant main body and peep hole opposite side, convenient for observing the growth of monocrystalline.The beneficial effects of the invention are as follows with multiple sight holes, convenient for observing the growth of monocrystalline, under the premise of guaranteeing that crystal structure area temperature maintains silicon crystalline temperature temperature, accelerates plane of crystal heat loss, increase crystal axial-temperature gradient, monocrystalline pulling rate is promoted to be promoted.
Description
Technical field
The invention belongs to photovoltaic technology field, more particularly, to a kind of dress for lifting speed and heat dissipation suitable for large size single crystal
It sets.
Background technique
For the requirement of matching component power plant high power products, there is larger size that must ask crystal terminal monocrystalline.11 cun of drawing,
12 cun of large size single crystals, since diameter is bigger, the more conventional small size monocrystalline that radiates is slower, causes monocrystalline pulling rate relatively low and the speed that radiates
It is longer to spend the slow temperature fall time of slow monocrystalline, influences crystal-pulling effective working, influences cost.
The design of existing water-cooling system is equal to avoid blocking the generally superpower water cooling of sight above the monocrystalline at 100-300mm
For pyramidal structure narrow under preceding, water-cooling system farther out from monocrystalline, radiates to monocrystalline and lifts fast due to upper hem width pyramidal structure
Effect weakened.
Summary of the invention
In view of the above problems, the problem to be solved in the present invention is to provide one kind to be suitable for large size single crystal lifting speed and heat dissipation
Device, be suitable for large size single crystal table refrigeration system, guarantee crystal structure area temperature maintain silicon crystalline temperature temperature premise
Under, accelerate plane of crystal heat loss, increase crystal axial-temperature gradient, monocrystalline pulling rate is promoted to be promoted.
In order to solve the above technical problems, the technical solution adopted by the present invention is that: one kind being suitable for large size single crystal lifting speed
And the device of heat dissipation, including refrigerating plant main body, inlet and outlet pipes, water inlet line and outlet conduit respectively with refrigeration
Apparatus main body connection, it is logical in refrigerating plant main body inner recirculation flow convenient for cooling medium, wherein
Refrigerating plant main body is equipped with multiple sight holes, and multiple sight holes are set gradually along mono-crystal furnace cover to crucible direction；
And
Mono-crystal furnace cover is equipped with peep hole, and multiple sight holes are set to refrigerating plant main body and peep hole opposite side, convenient for observation
The growth of monocrystalline.
Further, the direction being arranged along multiple sight holes, the length in first sight hole is in the sight side of peep hole
The solid liquid interface of the upward projection covering crystal growth growing point farthest away from peep hole, convenient for passing through first sight hole observation
The growing point growth farthest away from peep hole of the solid liquid interface of crystal growth；And
The solid-liquid of projection covering crystal growth of the length in the last one sight hole of end on the direction of visual lines of peep hole
The interface growing point nearest away from peep hole, convenient for observing the solid liquid interface of crystal growth by the last one sight hole of end away from sight
Examine the nearest growing point growth in hole.
Further, along multiple sight holes be arranged direction, first sight hole, monocrystalline solid liquid interface away from peep hole most
The peep hole of remote growing point and mono-crystal furnace cover is linearly arranged, convenient for observing the solid liquid interface of monocrystalline away from the farthest growing point of peep hole
Growth；And
Last sight hole, monocrystalline solid liquid interface linearly set away from the peep hole of the nearest growing point of peep hole and mono-crystal furnace cover
It sets, convenient for observing the solid liquid interface of monocrystalline away from the growth of the nearest growing point of peep hole.
Further, the vertical length of refrigerating plant main body is 800-1200mm.
Further, refrigerating plant main body is cylindrical structure, and the internal diameter of refrigerating plant main body is greater than the diameter of monocrystalline.
Further, the difference of the diameter of the internal diameter and monocrystalline of refrigerating plant main body is 40-80mm.
Further, refrigerating plant main body has in the water cooling of cavity for inside and leads.
Further, the liquid level of the end of refrigerating plant main body and silicon solution distance is not more than 70mm.
Due to the adoption of the above technical scheme, there is the longer refrigerating plant main body of vertical length, guaranteeing crystal structure area
Under the premise of temperature maintains silicon crystalline temperature temperature, accelerate plane of crystal heat loss, increase crystal axial-temperature gradient, promotes
Monocrystalline pulling rate is promoted；Meanwhile there is sight hole, by the sight hole, operator can constantly observe monocrystalline crystal region solid-liquid circle
Crystal growth condition at face will not block sight, guarantee the refrigeration space of large area in single crystal growing furnace, accelerate single-crystal surface heat
It scatters and disappears.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of one embodiment of the invention.
In figure:
1, water inlet line 2, refrigerating plant main body 3, peep hole sight
4, sight hole 5, outlet conduit
Specific embodiment
The present invention is further illustrated in the following with reference to the drawings and specific embodiments.
Fig. 1 shows the structural schematic diagram of one embodiment of the invention, and the structure of the present embodiment, the present embodiment has been shown in particular
It is related to a kind of device for lifting speed and heat dissipation suitable for large size single crystal, is applied to carry out hot biography to monocrystalline during pulling of crystals
It leads, the heat of single-crystal surface is taken away, promote single-crystal surface heat loss, it should be fast suitable for large size single crystal lifting and heat dissipation
The refrigerating plant of device is straight tube structure, and interior diameter is slightly larger than single crystal diameter, guarantees monocrystalline normal through and as close as possible to list
Crystalline substance accelerates the heat dissipation of monocrystalline；Refrigerating plant main body has multiple sight holes simultaneously, promotes the vertically long of the entirety of refrigerating plant
Degree, had both avoided straight wall from blocking observation sight, ensured that the refrigeration space of large area in single crystal growing furnace, accelerated single-crystal surface heat
Scatter and disappear, improve the pulling rate of pulling of crystals.
During pulling of crystals, the principle for improving pulling rate is before guaranteeing that crystal structure area temperature maintains silicon crystalline temperature temperature
It puts, the big crystal axial-temperature gradient, that is, single-crystal surface temperature the low more is conducive to the promotion of monocrystalline pulling rate, it is, refrigeration dress
Nearly monocrystalline is rested against, refrigerating plant and single-crystal surface heat exchange are improved, accelerates single-crystal surface heat loss.
The radiating principle of monocrystalline during pulling of crystals are as follows: monocrystalline can just take after radiating and cooling in single crystal growing furnace domestic demand
Out outside single crystal growing furnace, if directly proposed outside single crystal growing furnace, due to the temperature difference great inside and outside furnace, it can make to generate more answer inside monocrystalline
Power leads to the generation of dislocation and crackle, monocrystalline quality is influenced, therefore refrigerating plant need to be arranged in single crystal growing furnace, with single-crystal surface
Heat exchange is carried out, guarantees that monocrystalline crystal region upper area in relatively low environment, is straightened more full and uniform in the process conducive to monocrystalline
Heat dissipation.
A kind of device lifting speed and heat dissipation suitable for large size single crystal, as shown in Figure 1, including water inlet line 1, outlet pipe
Road 5 and refrigerating plant main body 2, water inlet line 1 and outlet conduit 5 are connect with refrigerating plant main body 2 respectively so that cooling medium by
Water inlet line 1 enters in refrigerating plant main body 2, and in 2 internal circulation flow of refrigerating plant main body, is discharged from outlet conduit 5, herein
In flow process, the heat of single-crystal surface is taken away, realizes the heat loss on the surface of monocrystalline, cools down, wherein
Refrigerating plant main body 22 is equipped with multiple sight holes 4, and multiple sight holes 4 are successively set along mono-crystal furnace cover to crucible direction
It sets, crystal growth is observed, the temperature of refrigerating plant main body 2 is lower than the temperature of single-crystal surface, refrigerating plant main body 2 and list
Crystalline substance carries out heat transfer, and refrigerating plant main body 2 can take away the heat of single-crystal surface, accelerates the heat loss of single-crystal surface；
And mono-crystal furnace cover is equipped with peep hole, multiple sight holes 4 are set to refrigerating plant main body 2 and mono-crystal furnace cover is observed
Hole opposite side guarantees the quality of monocrystalline convenient for observing by peep hole and sight hole crystal growth.
The setting in sight hole 4, it is raw to the solid liquid interface crystal of pulling monocrystal by observation window and sight hole 4 convenient for observer
Long situation is observed, and will not be stopped to the sight of observer；In addition, multiple sight holes 4 are along mono-crystal furnace cover to crucible
Direction set gradually, can be right so that the length of refrigerating plant main body 2 and the distance between mono-crystal furnace cover and crucible are adaptable
Monocrystalline is located at the part in the space above the indoor crucible of single crystal growing furnace master and radiates, and heat transfer area is big, accelerates monocrystalline table
Face heat scatters and disappears.
Specifically, one end of water inlet line 1 is connected to refrigerating plant main body 2 with one end of outlet conduit 5, water inlet line
1 other end and the other end of outlet conduit 5 are fixedly mounted with mono-crystal furnace cover respectively, and are located at the two sides of monocrystalline, water inlet line 1
The end extend mono-crystal furnace cover, connect with external water inlet pipe, mono-crystal furnace cover is extended at the end of outlet conduit 5, with outside
Outlet pipe connection, and one end of water inlet line 1 and one end of outlet conduit 5 are connect with refrigerating plant main body 2 respectively, at the same into
Waterpipe 1 is connected to refrigerating plant main body respectively with outlet conduit 5, enters refrigerating plant from water inlet line 1 convenient for cooling medium
It inside main body 2, and after the circulation of refrigerating plant main body 2, is flowed out from outlet conduit 5, during cooling medium circulation, with list
Crystalline substance carries out heat transfer, and the heat of single-crystal surface is carried away, and accelerates scattering and disappearing for the heat of single-crystal surface.
The refrigerating plant main body 2 be equipped with multiple sight holes 4, multiple sight holes 4 along mono-crystal furnace cover to crucible direction according to
Secondary setting, can be spaced set, is also possible to non-spaced set, is selected according to actual needs, does not do have here
Body requirement, for ease of description, setting: being end positioned at one end of crucible positioned at one end of mono-crystal furnace cover as head end.Refrigerating plant
The head end of main body 2 is connect with water inlet line 1 and outlet conduit 5, carries out the input and discharge of cooling medium.Multiple 4 edges of sight hole
Head end to the end of refrigerating plant main body 2 set gradually, and multiple sight holes 4 are set to refrigerating plant main body 2 and mono-crystal furnace cover
On the opposite side of peep hole, convenient for observing the upgrowth situation of monocrystalline by peep hole and sight hole 4, the quantity in the sight hole is more
It is a, it is selected according to actual needs, does not do specific requirement here.
Preferably, multiple sight holes 4 are located along the same line, convenient for observing crystal growth.
Consolidate when mono-crystal furnace cover is equipped with peep hole, passes through the peep hole and sight hole 4 to pulling of crystals convenient for operator
Crystal growth situation in liquid interface is observed, and guarantees the quality of monocrystalline；
Along the direction that multiple sight holes 4 are arranged, the length in first sight hole 4 of the head end of refrigerating plant main body 2 exists
The solid liquid interface of projection covering crystal growth on the direction of visual lines of the peep hole growing point farthest at a distance of peep hole, convenient for passing through
Growing point growth state of crystal is observed in first sight hole 4, and operator observes vertical pulling list by peep hole and first sight hole 4
The growth state of crystal of solid liquid interface when brilliant, and can observe the solid liquid interface apart from peep hole apart from farthest growing point list
Crystals growth situation guarantees the quality of monocrystalline；
And the length in the last one sight hole 4 of the end of refrigerating plant main body is on the direction of visual lines of peep hole
The solid liquid interface of the projection covering crystal growth growing point nearest at a distance of peep hole, convenient for passing through the last one sight hole 4 of end
Observe growing point growth state of crystal, operator can by peep hole and the last one sight hole 4 of end to pulling of crystals when
The crystal growth situation of solid liquid interface is observed, and growing point crystal that can be nearest apart from peep hole to monocrystalline solid liquid interface
Upgrowth situation is observed, and is guaranteed crystal growth quality, is guaranteed going on smoothly for pulling of crystals.Here, monocrystalline solid liquid interface away from
Same both ends diametrically from the solid liquid interface that the farthest growing point of peep hole and nearest growing point are located at monocrystalline.
It is, along multiple sight holes 4 be arranged direction, first sight hole 4, monocrystalline solid liquid interface apart from peep hole
The peep hole of farthest growing point and mono-crystal furnace cover is linearly arranged, it is, along the direction that multiple sight holes 4 are arranged, it is first
A sight hole 4, the growing point and peep hole that the solid liquid interface of monocrystalline is farthest apart from peep hole are linearly arranged, logical convenient for operator
The growth state of crystal at peep hole and first sight hole 4 observation monocrystalline solid liquid interface is crossed, it can be to the crystalline substance of entire solid liquid interface
The upgrowth situation of body is observed, and guarantees going on smoothly for pulling of crystals, guarantees the quality of monocrystalline.
And the observation of the solid liquid interface growing point and mono-crystal furnace cover nearest apart from peep hole in end sight hole 4, monocrystalline
Hole is linearly arranged, it is, nearest growth of the solid liquid interface in end sight hole 4, peep hole and monocrystalline apart from peep hole
It is raw by peep hole and end sight hole 4 to observe the crystal at monocrystalline solid liquid interface convenient for operator for the growth state of crystal of point
Long situation can be observed the upgrowth situation of the crystal of entire solid liquid interface, guarantee going on smoothly for pulling of crystals, guarantee
The quality of monocrystalline.
Multiple sight holes 4 are arranged along side on mono-crystal furnace cover to crucible direction, and the shape in sight hole 4 can be circle
Shape is rectangular or other shapes, is selected according to actual needs, does not do to have requiring here.
The vertical length of the refrigerating plant main body 2 is 800-1200mm, the end of refrigerating plant main body 2 and the liquid of silicon solution
Identity distance is selected according to actual needs from the vertical length no more than 70mm, refrigerating plant main body 2, can be accommodated positioned at monocrystalline
The indoor monocrystalline of furnace master carries out heat transfer to monocrystalline, the heat of single-crystal surface is conducted, carries out heat loss.
The refrigerating plant main body 2 is cylinder, it is, the refrigerating plant main body 2 is straight wall barrel-like structure, and the dress that freezes
The internal diameter for setting main body 2 is greater than the diameter of monocrystalline, and the difference of the diameter of the internal diameter and monocrystalline of refrigerating plant main body 2 is 40-80mm, so that
Refrigerating plant main body 2 guarantees that monocrystalline passes through refrigerating plant as close as possible to single-crystal surface, and can quickly and single-crystal surface into
Row heat transfer accelerates single-crystal surface heat loss.
Above-mentioned refrigerating plant main body 2 is to lead in water cooling, has the ring-shaped cavity structure of cavity for inside, and lead in water cooling
Upper end there is water inlet and water outlet, convenient for the inlet and outlet of cooling medium, cooling medium enters outlet conduit 5, and from
Outlet conduit 5 flows out, and realizes that cooling medium circulates inside refrigerating plant main body 2, cooling medium is during flowing
Heat exchange is carried out with single-crystal surface, takes away the heat of single-crystal surface, accelerates scattering and disappearing for single-crystal surface heat.
Above-mentioned cooling medium can be other solvents of water or other cooling mediums, preferably water, at
This is low, is easy to use, and will not introduce in the process other impurities to pulling of crystals.
In the present embodiment, the quantity in sight hole 4 is preferably three, is vertically set along the direction of mono-crystal furnace cover to crucible
It sets, the water inlet of 2 upper end of refrigerating plant main body is connect with water inlet line 1, and the water outlet of upper end is connect with outlet conduit, and first
The crystal growth point in farthest point is linearly arranged at the solid liquid interface in sight hole 4, peep hole and monocrystalline, convenient for by peep hole and
The upgrowth situation of the monocrystalline of farthest growing point is observed in first sight hole 4, guarantees the growth quality of monocrystalline；Third sight hole
4, the growing point of the solid liquid interface closest approach of peep hole and monocrystalline is linearly arranged, convenient for passing through peep hole and third sight hole
The upgrowth situation of the monocrystalline of the 4 nearest growing points of observation, guarantees the growth quality of monocrystalline, by cooling water by water inlet line,
Refrigerating plant main body is connected to outlet conduit, realizes the circulation of cooling water, during flow of cooling water, with monocrystalline
Surface is radiated by convection current, and the heat of single-crystal surface is taken away, and is carried out heat exchange with single-crystal surface, is accelerated single-crystal surface heat
It scatters and disappears.
The vertical length of the refrigerating plant main body 2 is 1000mm, and the internal diameter of refrigerating plant main body 2 is greater than the straight of monocrystalline
Diameter, and the difference of the internal diameter of refrigerating plant main body 2 and single crystal diameter is 60mm, convenient for passing through for monocrystalline, meanwhile, refrigeration dress
It sets the bottom end of main body 2 and at a distance from silicon solution is 60mm in crucible, so that having large area in single crystal growing furnace is refrigeration space, system
Device for cooling accelerates the surface heat loss of monocrystalline close to monocrystalline.
Due to the adoption of the above technical scheme, there is the longer refrigerating plant main body of vertical length, guaranteeing crystal structure area
Under the premise of temperature maintains silicon crystalline temperature temperature, accelerate plane of crystal heat loss, increase crystal axial-temperature gradient, promotes
Monocrystalline pulling rate is promoted；Meanwhile there is sight hole, by the sight hole, operator can constantly observe monocrystalline crystal region solid-liquid circle
Crystal growth condition at face will not block sight, guarantee the refrigeration space of large area in single crystal growing furnace, accelerate single-crystal surface heat
It scatters and disappears.
The embodiments of the present invention have been described in detail above, but content is only the preferred embodiment of the present invention,
It should not be considered as limiting the scope of the invention.Any changes and modifications in accordance with the scope of the present application,
It should still be within the scope of the patent of the present invention.
Claims (8)
1. a kind of device for lifting speed and heat dissipation suitable for large size single crystal, it is characterised in that: including refrigerating plant main body, water inlet
Pipeline and outlet conduit, the water inlet line are connect with the refrigerating plant main body respectively with the outlet conduit, convenient for cooling
Medium is logical in the refrigerating plant main body inner recirculation flow, wherein
The refrigerating plant main body is equipped with multiple sight holes, and the multiple sight hole is successively set along mono-crystal furnace cover to crucible direction
It sets；And
The mono-crystal furnace cover is equipped with peep hole, and it is opposite with the peep hole that the multiple sight hole is set to the refrigerating plant main body
Side, convenient for observing the growth of monocrystalline.
2. the device according to claim 1 lifting speed suitable for large size single crystal and radiated, it is characterised in that:
Along the direction that the multiple sight hole is arranged, the direction of visual lines of the length in first sight hole in the peep hole
On projection cover the solid liquid interface growing point farthest away from the peep hole of the crystal growth, convenient for passing through described first
The solid liquid interface that the crystal growth is observed in sight hole is grown away from the farthest growing point of the peep hole；And
Projection of the length in the last one sight hole of end on the direction of visual lines of the peep hole covers the crystal growth
The solid liquid interface growing point nearest away from the peep hole, it is raw convenient for observing the monocrystalline by the last one sight hole of the end
The growing point growth nearest away from the peep hole of long solid liquid interface.
3. the device according to claim 2 lifting speed suitable for large size single crystal and radiated, it is characterised in that: along institute
State the direction of multiple sight holes setting, the first sight hole, the monocrystalline solid liquid interface farthest grown away from the peep hole
The peep hole of point and the mono-crystal furnace cover is linearly arranged, and farthest grows convenient for observing the solid liquid interface of monocrystalline away from the peep hole
The growth of point；And
The last sight hole, the monocrystalline solid liquid interface away from the sight of the peep hole nearest growing point and the mono-crystal furnace cover
It examines hole to be linearly arranged, convenient for observing the solid liquid interface of monocrystalline away from the growth of the nearest growing point of the peep hole.
4. according to claim 1-3 exist suitable for large size single crystal lifting speed and the device of heat dissipation, feature
In: the vertical length of the refrigerating plant main body is 800-1200mm.
5. the device according to claim 4 lifting speed suitable for large size single crystal and radiated, it is characterised in that: the system
Device for cooling main body is cylindrical structure, and the internal diameter of the refrigerating plant main body is greater than the diameter of the monocrystalline.
6. the device according to claim 5 lifting speed suitable for large size single crystal and radiated, it is characterised in that: the system
The difference of the diameter of the internal diameter of device for cooling main body and the monocrystalline is 40-80mm.
7. the device according to claim 5 or 6 lifting speed suitable for large size single crystal and radiated, it is characterised in that: institute
Stating refrigerating plant main body has in the water cooling of cavity and leads for inside.
8. the device according to claim 7 lifting speed suitable for large size single crystal and radiated, it is characterised in that: the system
The end of device for cooling main body and the liquid level distance of silicon solution are not more than 70mm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910868501.4A CN110424050A (en) | 2019-09-12 | 2019-09-12 | A kind of device lifting speed and heat dissipation suitable for large size single crystal |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910868501.4A CN110424050A (en) | 2019-09-12 | 2019-09-12 | A kind of device lifting speed and heat dissipation suitable for large size single crystal |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111334853A (en) * | 2020-04-03 | 2020-06-26 | 大连连城数控机器股份有限公司 | Heat radiation reflection device for improving growth speed of czochralski single crystal |
| CN115896922A (en) * | 2023-02-16 | 2023-04-04 | 杭州天桴光电技术有限公司 | Device for growth and in-situ annealing of large-size calcium fluoride single crystal |
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| CN201459276U (en) * | 2009-06-22 | 2010-05-12 | 上虞晶盛机电工程有限公司 | Czochralski silicon single crystal growing furnace with water cooling jacket |
| CN207452295U (en) * | 2017-09-20 | 2018-06-05 | 内蒙古中环光伏材料有限公司 | A kind of cooling device for improving monocrystalline silicon pulling rate |
| CN210636089U (en) * | 2019-09-12 | 2020-05-29 | 内蒙古中环光伏材料有限公司 | Device suitable for large-size single crystal pulling speed raising and heat dissipation |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090024995A1 (en) * | 2007-07-16 | 2009-01-22 | Peter Andrew Rowley | Dynamic service topology |
| CN201459276U (en) * | 2009-06-22 | 2010-05-12 | 上虞晶盛机电工程有限公司 | Czochralski silicon single crystal growing furnace with water cooling jacket |
| CN207452295U (en) * | 2017-09-20 | 2018-06-05 | 内蒙古中环光伏材料有限公司 | A kind of cooling device for improving monocrystalline silicon pulling rate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111334853A (en) * | 2020-04-03 | 2020-06-26 | 大连连城数控机器股份有限公司 | Heat radiation reflection device for improving growth speed of czochralski single crystal |
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