CN206562474U - A kind of sapphire crystallization furnace seed crystal cooling is with changing system - Google Patents
A kind of sapphire crystallization furnace seed crystal cooling is with changing system Download PDFInfo
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- CN206562474U CN206562474U CN201720060593.XU CN201720060593U CN206562474U CN 206562474 U CN206562474 U CN 206562474U CN 201720060593 U CN201720060593 U CN 201720060593U CN 206562474 U CN206562474 U CN 206562474U
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- cooling chamber
- heater
- cooling
- seed crystal
- seed
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Abstract
The utility model is related to a kind of sapphire crystallization furnace seed crystal cooling and replacing system, including body of heater, seed rod and cooling chamber, upper of furnace body is provided with secondary stove, cooling chamber is provided with below the top of body of heater, the cooling chamber is the liquid that high latent heat of phase change is filled with ring sleeve structure, cooling chamber, and the upper end of cooling chamber is connected with towards the return duct outside body of heater, the lower end of the seed rod passes through secondary stove and stretches into furnace interior, and cooling chamber is set in outside seed rod.The temperature that the utility model can be used for adjusting seed crystal by cooling chamber keeps it in suitably long brilliant condition, the liquid of high latent heat of phase change can pass back into cooling chamber after vaporization by cooling water pipe cooling liquid in cooling chamber, when in stove seed crystal because misoperation melt after can without cool down body of heater and only need seed rod lower end being promoted to secondary stove, then stretched into again in stove after changing seed crystal after secondary stove is cooled down, reduce energy loss, the utility model design is simple, easy to use, easy-maintaining.
Description
Technical field
The utility model is related to sapphire growth apparatus technical field, and in particular to a kind of sapphire crystallization furnace seed crystal cooling
With changing system.
Background technology
At present, the growing method of sapphire crystal material mainly has a kyropoulos, czochralski method, Bridgman-Stockbarger method etc., kyropoulos
It is one of generally acknowledged method of most suitable large-scale production, with the continuous expansion of sapphire application field, to sapphire crystal
Quality and size propose higher requirement, sapphire growth apparatus is rationally the premise bar for improving sapphire single-crystal quality
Rationally, sapphire single-crystal internal flaw can just be reduced, and especially large-size sapphire single-crystal growth cycle is long for part, only thermal field, after
The phase speed of growth is difficult to control, and the slight variation of temperature just easily increases matter crystal internal defect, therefore, to sapphire crystallization furnace
Temperature must strictly control, during production seeding, because seed crystal access times are excessive or misoperation causes in seeding mistake
Seed crystal melts and can not used in journey, causes long brilliant stopping.
Utility model content
The purpose of this utility model is that there is provided a kind of sapphire crystallization furnace seed crystal is cold to solve the deficiency of above-mentioned technical problem
But with changing system, the temperature that the utility model can be used for adjusting seed crystal by cooling chamber keeps it in suitably long brilliant bar
The liquid of high latent heat of phase change can pass back into cooling chamber after vaporization by cooling water pipe cooling liquid in part, cooling chamber, make height
The liquid circulation of latent heat of phase change is used, when in stove seed crystal because misoperation melt after can without cool down body of heater and only need seed crystal
Bar lower end is promoted to secondary stove, is stretched into again in stove after changing seed crystal after then secondary stove is cooled down, reduces energy loss.
To solve this technical problem, the utility model takes following technical scheme:A kind of sapphire crystallization furnace seed crystal cooling
With changing system, including body of heater, seed rod and cooling chamber, the upper of furnace body is provided with secondary stove, and body of heater passes through motor-driven valve with secondary stove
Door is separated, and cooling chamber is provided with below the top of body of heater, the cooling chamber is ring sleeve structure, and the casing inner diameter of cooling chamber is big
In the liquid that high latent heat of phase change is filled with the diameter of seed rod, cooling chamber, the upper end of cooling chamber is connected with towards outside body of heater
Return duct, the lower end of the seed rod passes through secondary stove and stretches into furnace interior, and the lower end termination of seed rod is connected with seed crystal,
Cooling chamber is set in outside seed rod, and the top of seed rod is connected with pulling apparatus, and the secondary stove lower sides are cold provided with inputting
The intake valve of gas, top be provided with can close fit bell, middle part is connected with pumped vacuum systems.
Further improvement as a kind of sapphire crystallization furnace seed crystal cooling of the utility model with changing system:The backflow
Pipe, which stretches out, to be arranged with the body of body of heater for by the high liquefied cooling water pipe of latent heat of phase change liquid of vaporization.
Beneficial effect
1. the temperature that the utility model can be used for adjusting seed crystal by cooling chamber keeps it in suitably long brilliant condition, cold
The liquid of indoor high latent heat of phase change can pass back into cooling chamber after vaporization by cooling water pipe cooling liquid, and cooling is rapid,
And the liquid of high latent heat of phase change reaches and recycled, production cost is reduced.
2. during the utility model seeding, because seed crystal access times are excessive or misoperation causes during seeding
Seed crystal melt and can not be in use, seed crystal and seed rod seed crystal be respectively less than the central through hole diameter of cooling chamber, can be without cooling
Body of heater, which takes out seed rod, loads seed crystal, and only needs opening electrically operated valve that seed rod lower end is promoted into secondary stove, then opens stove
Lid, cold air is passed through by intake valve, and the secondary stove of cooling changes seed crystal, again drops to seed rod suitably after being then evacuated
Position, is then shut off electrically operated valve, effectively reduce energy loss, it is to avoid production is terminated.
Brief description of the drawings
Fig. 1 is the structural representation of the utility model sapphire crystallization furnace heat-insulation system;
Marked in figure:1st, body of heater, 2, secondary stove, 3, seed rod, 4, cooling chamber, 5, electrically operated valve, 6, return duct, 7, seed crystal,
8th, intake valve, 9, pumped vacuum systems.
Embodiment
As shown in the figure:1. a kind of sapphire crystallization furnace seed crystal cooling is with changing system, including body of heater 1, seed rod 3 and cooling
Room 4, the top of body of heater 1 is provided with secondary stove 2, and body of heater 1 is separated by electrically operated valve 5 with secondary stove 2, is provided with below the top of body of heater 1
Cooling chamber 4, the cooling chamber 4 be ring sleeve structure, and cooling chamber 4 casing inner diameter be more than seed rod 3 diameter, cooling chamber
The liquid of high latent heat of phase change is filled with 4, the upper end of cooling chamber 4 is connected with towards the return duct 6 outside body of heater 1, the seed crystal
The lower end of bar 3 passes through secondary stove 2 and stretched into inside body of heater 1, and the lower end termination of seed rod 3 is connected with seed crystal 7, and cooling chamber 4 is arranged
Outside seed rod 3, the top of seed rod 3 is connected with pulling apparatus, air inlet of the secondary lower sides of stove 2 provided with input cold air
Valve 8, top be provided with can close fit bell, middle part is connected with pumped vacuum systems 9, and the return duct 6 stretches out body of heater 1
Body on be arranged with for by the high liquefied cooling water pipe of latent heat of phase change liquid of vaporization.
The temperature that the utility model can be used for adjusting seed crystal 7 by cooling chamber 4 is kept it under conditions of suitably long crystalline substance,
The liquid of high latent heat of phase change can pass back into cooling chamber 4 after vaporization by cooling water pipe cooling liquid in cooling chamber 4, cool down fast
Speed, and the liquid of high latent heat of phase change reaches and recycle, during reducing production cost, seeding, due to the access times mistake of seed crystal 7
Many or misoperation cause during seeding seed crystal 7 to melt and can not be in use, seed crystal 7 and the seed crystal 7 of seed rod 3 be respectively less than cold
But the central through hole diameter of room 4, can load seed crystal 7 without cooling down body of heater 1 and taking out seed rod 3, and only need to open motor-driven valve
The lower end of seed rod 3 is promoted to secondary stove 2 by door 5, then opens bell, and cold air is passed through by intake valve 8, and the secondary stove 2 of cooling changes seed
Crystalline substance 7, drops to suitable position by seed rod 3 again after being then evacuated, is then shut off electrically operated valve 5, effectively reduces
Energy loss, it is to avoid production is terminated, the utility model can ensure long brilliant temperature ring for adjusting the temperature of seed crystal 7
Border, can avoid stopping the trouble that seed crystal 7 is reinstalled in production after the thawing of seed crystal during seeding 7, reduce energy again
Amount loss, and design is simple, it is easy to use, it is easy-maintaining.
It is described above, only it is preferred embodiment of the present utility model, not makees any formal to the utility model
Limitation, although the utility model is disclosed above with preferred embodiment, but is not limited to the utility model, any ripe
Professional and technical personnel is known, is not being departed from the range of technical solutions of the utility model, when in the technology using the disclosure above
Hold the equivalent embodiment made a little change or be modified to equivalent variations, as long as being without departing from technical solutions of the utility model
Hold, any simple modification, equivalent variations and the modification made according to technical spirit of the present utility model to above example, still
Belong in the range of technical solutions of the utility model.
Claims (2)
1. a kind of sapphire crystallization furnace seed crystal cooling is with changing system, including body of heater(1), seed rod(3)And cooling chamber(4), institute
State body of heater(1)Top is provided with secondary stove(2), body of heater(1)With secondary stove(2)Pass through electrically operated valve(5)Separate, body of heater(1)Top under
Side is provided with cooling chamber(4), the cooling chamber(4)For ring sleeve structure, and cooling chamber(4)Casing inner diameter be more than seed rod
(3)Diameter, cooling chamber(4)The interior liquid filled with high latent heat of phase change, cooling chamber(4)Upper end be connected with towards body of heater(1)
Outside return duct(6), the seed rod(3)Lower end pass through secondary stove(2)And stretch into body of heater(1)Inside, and seed rod(3)'s
Lower end termination is connected with seed crystal(7), cooling chamber(4)It is set in seed rod(3)Outside, seed rod(3)Top and pulling apparatus
Connection, the secondary stove(2)Intake valve of the lower sides provided with input cold air(8), top be provided with can close fit bell, in
Between position be connected with pumped vacuum systems(9).
2. a kind of sapphire crystallization furnace seed crystal cooling as claimed in claim 1 is with changing system, it is characterised in that:The backflow
Pipe(6)Stretch out body of heater(1)Body on be arranged with for by the high liquefied cooling water pipe of latent heat of phase change liquid of vaporization.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201720060593.XU CN206562474U (en) | 2017-01-19 | 2017-01-19 | A kind of sapphire crystallization furnace seed crystal cooling is with changing system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201720060593.XU CN206562474U (en) | 2017-01-19 | 2017-01-19 | A kind of sapphire crystallization furnace seed crystal cooling is with changing system |
Publications (1)
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CN206562474U true CN206562474U (en) | 2017-10-17 |
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CN201720060593.XU Expired - Fee Related CN206562474U (en) | 2017-01-19 | 2017-01-19 | A kind of sapphire crystallization furnace seed crystal cooling is with changing system |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110904500A (en) * | 2019-11-04 | 2020-03-24 | 南京同溧晶体材料研究院有限公司 | Sapphire crystal growth furnace with replaceable seed crystal for multiple times and adopting film guide method |
WO2022052080A1 (en) * | 2020-09-14 | 2022-03-17 | 南京同溧晶体材料研究院有限公司 | Edge-defined film-fed growth method-based sapphire crystal growth furnace capable of replacing seed crystals for multiple times |
-
2017
- 2017-01-19 CN CN201720060593.XU patent/CN206562474U/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110904500A (en) * | 2019-11-04 | 2020-03-24 | 南京同溧晶体材料研究院有限公司 | Sapphire crystal growth furnace with replaceable seed crystal for multiple times and adopting film guide method |
CN110904500B (en) * | 2019-11-04 | 2021-09-28 | 南京同溧晶体材料研究院有限公司 | Sapphire crystal growth furnace with replaceable seed crystal for multiple times and adopting film guide method |
WO2022052080A1 (en) * | 2020-09-14 | 2022-03-17 | 南京同溧晶体材料研究院有限公司 | Edge-defined film-fed growth method-based sapphire crystal growth furnace capable of replacing seed crystals for multiple times |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171017 Termination date: 20180119 |
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CF01 | Termination of patent right due to non-payment of annual fee |