CN115287745B - Single crystal furnace - Google Patents
Single crystal furnace Download PDFInfo
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- CN115287745B CN115287745B CN202210967435.8A CN202210967435A CN115287745B CN 115287745 B CN115287745 B CN 115287745B CN 202210967435 A CN202210967435 A CN 202210967435A CN 115287745 B CN115287745 B CN 115287745B
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- Prior art keywords
- furnace
- wall
- single crystal
- thermal field
- heat conducting
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- 239000013078 crystal Substances 0.000 title claims abstract description 85
- 239000000498 cooling water Substances 0.000 claims abstract description 11
- 238000007789 sealing Methods 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 230000017525 heat dissipation Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000006978 adaptation Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The application provides a single crystal furnace, comprising: the heat field assembly, a furnace cylinder, a heat conducting piece and a telescopic piece. Wherein the thermal field assembly is formed in a cylindrical shape and is provided with a chamber for pulling a single crystal, and the top of the chamber is provided with an opening; the furnace cylinder is sleeved outside the thermal field assembly, and a plurality of through holes are formed in the circumferential direction of the wall of the furnace cylinder; the heat conducting piece is arranged in the through hole and comprises a first end and a second end, the first end is used for being in contact with the outer wall of the thermal field assembly, and the second end is away from the first end; the telescopic piece is connected with the second end and used for driving the heat conducting piece to extend out to be in contact with the outer wall of the thermal field assembly or driving the heat conducting piece to retract. According to the single crystal furnace, the plurality of heat conducting pieces are arranged on the outer wall of the furnace barrel of the single crystal furnace at equal intervals, heat of the thermal field component is transferred, and heat exchange is carried out through cooling water in the wall of the furnace barrel, so that the single crystal furnace can be cooled rapidly, and the production efficiency is improved.
Description
Technical Field
The application relates to the field of single crystal preparation, in particular to a single crystal furnace.
Background
With the development of the photovoltaic industry, the demand for monocrystalline silicon in the solar industry is expanding. In the process of preparing monocrystalline silicon, time control of monocrystalline drawing is an important factor influencing the yield of the monocrystalline, and how to reduce the process time ratio and increase the effective yield time of the monocrystalline is a very effective yield increasing direction.
After the single crystal furnace pulls the single crystal, the heating is stopped, and the furnace is disassembled after the furnace is cooled. At this time, partial heat can be taken away by the flow of argon in the furnace, and then the conveying of the argon is stopped, so that the single crystal furnace is automatically cooled. Because the whole process is carried out in a sealed system, the convection heat transfer can not be carried out, and only the conduction and radiation heat transfer is carried out, so that the heat dissipation effect is underground. The cooling time of the single crystal furnace is long, so that the furnace disassembly period is long, the effective single crystal output time cannot be increased, and the production efficiency is reduced.
Content of the application
In view of the above, the present application provides a single crystal furnace for solving the problems that the heat dissipation efficiency of the single crystal furnace is low and the effective output time of single crystals cannot be improved.
In order to solve the technical problems, the application adopts the following technical scheme:
according to an embodiment of the application, a single crystal furnace comprises:
the thermal field assembly is formed into a cylinder shape and is provided with a chamber for pulling single crystals, and the top of the chamber is provided with an opening;
the furnace cylinder is sleeved outside the thermal field assembly, and a plurality of through holes are formed in the circumferential direction of the wall of the furnace cylinder;
the heat conducting piece is arranged in the through hole and comprises a first end and a second end, the first end is used for being in contact with the outer wall of the thermal field assembly, and the second end is away from the first end;
and the telescopic piece is connected with the second end and is used for driving the heat conducting piece to extend to be in contact with the outer wall of the thermal field assembly or driving the heat conducting piece to retract.
Specifically, after the single crystal furnace stops heating, the temperature of the thermal field assembly is higher, and the heat conduction piece in the wall of the furnace cylinder can be controlled to stretch out and draw back through the telescopic piece, so that the heat conduction piece is attached to the outer wall of the thermal field assembly, and has good heat conduction performance, and therefore the heat of the glowing thermal field assembly can be rapidly guided out of the furnace cylinder.
In one embodiment of the application, the wall of the furnace barrel is hollow, and the furnace barrel further comprises:
and the circulating water pump is communicated with the wall of the furnace cylinder and is used for inputting cooling water into the wall of the furnace cylinder.
Specifically, when the heat conductive member is used to remove heat, cooling water may be introduced into the wall of the furnace barrel, and circulated to exchange heat with the heat conductive member.
In one embodiment of the application, a gap exists between the inner side of the wall of the furnace barrel and the outer wall of the thermal field assembly.
In one embodiment of the application, the heat conducting member is formed as a copper rod, the diameter of which matches the diameter of the through hole.
In one embodiment of the present application, the single crystal furnace further comprises:
the sealing cover is arranged on the outer wall of the furnace cylinder, and a sealing cavity is arranged on one side, close to the outer wall of the furnace cylinder, of the sealing cover and is used for covering the through hole.
Specifically, the sealing cover is used for being covered outside the through hole so as to keep the oxygen-free environment in the single crystal furnace.
In one embodiment of the application, the end of the expansion element facing away from the heat conducting element is fixedly connected with the sealing cover.
In one embodiment of the application, the telescoping member comprises:
the telescopic motor is fixedly connected with the sealing cover;
and the telescopic hinge is respectively connected with the telescopic motor and the second end of the heat conducting piece and is used for controlling the heat conducting piece to stretch and retract under the driving of the telescopic motor.
In one embodiment of the application, the first end of the heat conducting member is flush with the inner wall of the furnace vessel when retracted. Specifically, when the single crystal is pulled, the telescopic piece controls the heat conduction piece to be in a contracted state, so that the influence on normal pulling is avoided.
In one embodiment of the present application, the inner wall of the through hole is copper.
In one embodiment of the application, the through holes comprise a plurality of through holes and are uniformly arranged on the wall of the furnace cylinder at intervals.
The technical scheme of the application has at least one of the following beneficial effects:
1. according to the single crystal furnace, the plurality of heat conducting pieces which are uniformly arranged at intervals are arranged on the outer wall of the furnace barrel of the single crystal furnace, heat of the thermal field assembly is transferred, and heat exchange is carried out through cooling water in the wall of the furnace barrel, so that the single crystal furnace can be rapidly cooled, and the production efficiency is improved;
2. when the single crystal furnace is used for pulling single crystals, the telescopic piece controls the heat conducting piece to be in a contracted state and to be flush with the wall of the furnace barrel, so that the interference on the flow direction of inert gas in the furnace can be avoided, and the influence on the normal pulling flow is avoided;
3. according to the single crystal furnace, the through holes are covered by the sealing cover, so that the single crystal furnace is kept sealed, and the thermal field assembly is prevented from being oxidized.
Drawings
FIG. 1 is a schematic diagram of a crystal pulling state of a single crystal furnace according to an embodiment of the present application;
FIG. 2 is a schematic view of a heat conduction member of a single crystal furnace according to an embodiment of the present application in a contracted state;
FIG. 3 is a schematic diagram of a structure of a single crystal furnace during furnace shutdown and heat dissipation according to an embodiment of the present application;
fig. 4 is a schematic structural view of a single crystal furnace according to an embodiment of the present application in an extended state of a heat conducting member.
Reference numerals: 100. a thermal field assembly; 200. a furnace cylinder; 300. a heat conductive member; 310. a first end; 320. a second end; 400. a telescoping member; 410. a telescopic hinge; 500. and (5) sealing the cover.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present application. It will be apparent that the described embodiments are some, but not all, embodiments of the application. All other embodiments, which are obtained by a person skilled in the art based on the described embodiments of the application, fall within the scope of protection of the application.
Unless defined otherwise, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this application belongs. The terms "first," "second," and the like, as used herein, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. Likewise, the terms "a" or "an" and the like do not denote a limitation of quantity, but rather denote the presence of at least one. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate a relative positional relationship, which changes accordingly when the absolute position of the object to be described changes.
The time control of the single crystal pulling is an important factor influencing the yield of the single crystal, the effective yield time of the single crystal is the time of the growth of the single crystal in the equal diameter stage, and the time of other working procedures is shortened, so that the cycle of the pulling growth is effectively shortened, at the moment, the time of the single crystal in the equal diameter stage is increased, and the effective yield of the single crystal is also increased. And after the single crystal is pulled in the current single crystal furnace, the heating is stopped, and the furnace is disassembled after the furnace is cooled. Because the whole process is carried out in a sealed system, the convection heat transfer can not be carried out, and only the conduction and radiation heat transfer is carried out, so that the heat dissipation effect is underground. The cooling time of the single crystal furnace is long, so that the furnace disassembly period is long, the effective single crystal output time cannot be increased, and the production efficiency is reduced. Taking the current single crystal furnace shutdown time as an example: the furnace stopping time of the single crystal furnace is 10 hours, and the temperature of the thermal field after furnace disassembly is 200-300 ℃. And cannot be immediately put into use. In order to solve the problems, the application provides a single crystal furnace.
A single crystal furnace according to the present application will be described in detail with reference to the accompanying drawings, including: thermal field assembly 100, furnace cartridge 200, heat conducting member 300. Wherein the thermal field assembly 100 is formed in a cylindrical shape and provided with a chamber for pulling a single crystal, the top of which is provided with an opening; the furnace cylinder 200 is sleeved outside the thermal field assembly 100, and a plurality of through holes are formed in the circumferential direction of the cylinder wall of the furnace cylinder 200; the heat conducting member 300 is disposed in the through hole and includes a first end 310 and a second end 320, the first end 310 is used for contacting with the outer wall of the thermal field assembly 100, and the second end 320 faces away from the first end 310; the expansion member 400 is connected to the second end 320 for driving the heat conductive member 300 to extend to contact the outer wall of the thermal field assembly 100 or for driving the heat conductive member 300 to retract.
Specifically, when the single crystal is pulled in the single crystal furnace, the telescopic member 400 controls the heat conducting member 300 in the wall of the furnace barrel 200 to retract, and at this time, the heat conducting member 300 is in a contracted state and is in a separated state from the outer wall of the heating assembly, so that the single crystal is not affected. After the single crystal furnace stops heating, the temperature of the thermal field assembly 100 is higher, and the heat conduction member 300 in the wall of the furnace barrel 200 can be controlled to stretch out through the telescopic member 400, so that the first end 310 of the heat conduction member 300 is attached to the outer wall of the thermal field assembly 100, and the heat conduction member 300 has good heat conduction performance, so that the heat of the hot thermal field assembly 100 can be rapidly led out from the first end 310 to the second end 320, and the second end 320 is cooled through a cooling member arranged in or outside the furnace barrel 200. Thus, the temperature of the thermal field assembly 100 can be rapidly reduced, effectively improving the single crystal production efficiency.
In one embodiment of the present application, the wall of the furnace vessel 200 is hollow, and the furnace vessel 200 further comprises: a circulating water pump (not shown). The circulating water pump is communicated with the wall of the furnace cylinder 200 and is used for inputting cooling water into the wall of the furnace cylinder 200.
Specifically, the wall of the furnace barrel 200 is hollow, and a heat dissipation pipeline surrounding the barrel of the furnace barrel 200 is provided, when the heat conduction member 300 is used for transferring heat of the thermal field assembly 100, a circulating water pump can be used for inputting cooling water into the heat dissipation pipeline, and the cooling water circulates along the heat dissipation pipeline, so that when the first end 310 of the heat conduction member 300 is attached to the outer wall of the thermal field assembly 100, heat exchange is performed with the second end 320 of the heat conduction member 300, and heat is efficiently conducted. Therefore, the heat dissipation efficiency is effectively improved.
In one embodiment of the present application, a gap exists between the inner side of the wall of the furnace vessel 200 and the outer wall of the thermal field assembly 100. Specifically, a gap is arranged between the inner side of the wall of the furnace barrel 200 and the outer wall of the thermal field assembly 100, so that the thermal field assembly 100 can be prevented from directly contacting with the wall of the furnace barrel 200, and flash evaporation caused by severe boiling of cooling water in the wall of the furnace barrel 200 can be avoided while the furnace barrel 200 is prevented from being destroyed by melting, and steam explosion is prevented. Therefore, the safety performance is effectively improved.
In one embodiment of the present application, the heat conductive member 300 is formed as a copper rod having a diameter matching that of the through hole. In particular, copper has a good thermal conductivity and can conduct heat rapidly. In addition, the diameter of the copper bar is matched with the diameter of the through hole, so that the contact area with the thermal field assembly 100 is increased, and the heat conduction efficiency is further improved. Taking the current single crystal furnace shutdown time as an example: the copper heat conduction piece 300 is used for radiating heat of the single crystal furnace, the furnace stopping time is shortened to 4 hours, the temperature of a partial area after furnace disassembly is only 150-300 ℃, the oxidation of the thermal field assembly 100 is effectively avoided, and meanwhile, the furnace stopping time is reduced by 60%, so that the time proportion of the effective output of single crystals is improved in the whole crystal pulling process. Thus, the temperature of the thermal field assembly 100 can be rapidly reduced, and the production efficiency can be improved. Of course, in other embodiments of the present application, the material of the heat conducting member 300 may be silver, aluminum, or other metals or non-metals with good heat conductivity, which is not limited herein.
In one embodiment of the present application, the single crystal furnace further comprises: the cap 500 is sealed. The sealing cover 500 is arranged on the outer wall of the furnace cylinder 200, and a sealing cavity is arranged on one side of the sealing cover 500, which is close to the outer wall of the furnace cylinder 200, and is used for covering the through hole.
Specifically, the through holes are covered by the sealing cover 500, so that the internal and air patterns of the single crystal furnace can be realized, and the thermal field assembly 100 is prevented from being oxidized by air after the temperature of the thermal field assembly 100 is reduced. Thereby, the thermal field assembly 100 is effectively protected, and the service life of the apparatus is improved.
In one embodiment of the present application, an end of the expansion member 400 facing away from the heat conductive member 300 is fixedly coupled to the sealing cap 500. Specifically, the expansion member 400 is disposed within the sealed cavity, and the expansion member 400 includes: a telescopic motor (not shown) and a telescopic hinge 410. Wherein, the telescopic motor is fixedly connected with the sealing cover 500; the telescopic hinge 410 is connected to the telescopic motor and the second end 320 of the heat conducting member 300, respectively, for controlling the telescopic movement of the heat conducting member 300 under the driving of the telescopic motor.
Specifically, the start and stop of the telescopic motor can be remotely controlled by using the wireless controller, and the telescopic hinge 410 can control the heat conducting piece 300 to stretch out or retract under the driving of the telescopic motor, so that the heat conducting piece 300 is contracted in the wall of the furnace barrel 200 when the single crystal is pulled, stretches out to be attached to the outer wall of the heat dissipation assembly for heat dissipation when the heat field assembly 100 dissipates heat, and effectively dissipates heat of the heat field assembly 100 when the single crystal is pulled by the single crystal furnace without affecting the single crystal pulling. In addition, the telescopic hinge 410 is simple in structure and low in failure rate, so that maintenance frequency can be effectively reduced, and labor is saved.
In one embodiment of the present application, the first end 310 of the heat conductive member 300 is flush with the inner wall of the furnace barrel 200 when retracted. Specifically, when pulling a single crystal, it is necessary to blow an inert gas into the single crystal furnace, and if the inert gas is unevenly distributed, the quality of the pulled single crystal is affected. At this time, the expansion member 400 may control the heat conductive member 300 to be in a contracted state, and the first end 310 of the expansion member 400 is flush with the inner wall of the furnace barrel 200, so as to ensure the smoothness of the inner wall of the furnace barrel 200, and avoid the interference to the flow direction of the inert gas, thereby avoiding the influence on the normal crystal pulling.
In one embodiment of the present application, the inner wall of the through hole is copper. Specifically, the inner wall of the through hole made of copper can rapidly transfer the heat of the second end 320 of the heat conducting member 300 and rapidly exchange heat with the cooling water in the wall of the furnace tube 200. Therefore, the heat dissipation efficiency is effectively improved, and the production efficiency is improved. In addition, the heat conducting member 300 and the inner wall of the through hole are made of copper, the friction coefficient of copper is low, and the heat conducting member 300 can stretch and retract smoothly in the through hole. Thereby, the smoothness of the operation of the heat conductive member 300 is improved.
In one embodiment of the present application, the through holes include a plurality of through holes and are uniformly spaced on the wall of the furnace shaft 200. Specifically, a plurality of rows of through holes may be uniformly distributed on the wall of the furnace tube 200 at intervals, and the thermal field assembly 100 may be cooled by using the heat conducting members 300, so that the temperature decrease rate of each part of the thermal field assembly 100 is kept uniform during the cooling. Therefore, the temperature consistency of each position of the thermal field assembly 100 can be ensured, the thermal field assembly 100 is prevented from cracking due to uneven cold and heat, and the safety performance is effectively improved.
According to the single crystal furnace, the plurality of heat conducting pieces which are uniformly arranged at intervals are arranged on the outer wall of the furnace barrel of the single crystal furnace, heat of the thermal field assembly is transferred, and heat exchange is carried out through cooling water in the wall of the furnace barrel, so that the single crystal furnace can be rapidly cooled, and the production efficiency is improved; meanwhile, when the single crystal furnace is used for pulling single crystals, the telescopic piece controls the heat conducting piece to be in a contracted state and to be flush with the wall of the furnace barrel, so that the interference on the flow direction of inert gas in the furnace can be avoided, and the influence on the normal pulling flow is avoided; in addition, the through holes are covered by the sealing cover, so that the single crystal furnace is kept sealed, and the thermal field component is prevented from being oxidized by air.
While the foregoing is directed to the preferred embodiments of the present application, it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present application, and such modifications and adaptations are intended to be comprehended within the scope of the present application.
Claims (9)
1. A single crystal growing furnace, comprising:
a thermal field assembly formed in a cylindrical shape and provided with a chamber for pulling a single crystal, the top of the chamber being provided with an opening;
the furnace cylinder is sleeved outside the thermal field assembly, a plurality of through holes are formed in the circumferential direction of the wall of the furnace cylinder, and the through holes are uniformly arranged on the wall of the furnace cylinder at intervals;
the heat conducting piece is arranged in the through hole and comprises a first end and a second end, the first end is used for being in contact with the outer wall of the thermal field assembly, and the second end is away from the first end;
and the telescopic piece is connected with the second end and is used for driving the heat conducting piece to extend out to be in contact with the outer wall of the thermal field assembly or driving the heat conducting piece to retract.
2. The single crystal growing furnace of claim 1 wherein the furnace barrel wall is hollow, the furnace barrel further comprising:
and the circulating water pump is communicated with the furnace cylinder wall and is used for inputting cooling water into the furnace cylinder wall.
3. The single crystal growing furnace of claim 1 wherein a gap exists between the inner side of the furnace barrel wall and the outer wall of the thermal field assembly.
4. A single crystal furnace according to claim 3, wherein the heat conducting member is formed as a copper rod, the diameter of which matches the diameter of the through hole.
5. The single crystal growing furnace of claim 4 further comprising:
the sealing cover is arranged on the outer wall of the furnace cylinder, and a sealing cavity is arranged on one side, close to the outer wall of the furnace cylinder, of the sealing cover and used for covering the through hole.
6. The single crystal growing furnace of claim 5 wherein an end of the telescoping member facing away from the thermally conductive member is fixedly connected to the sealing cap.
7. The single crystal growing furnace of claim 6 wherein the telescoping member comprises:
the telescopic motor is fixedly connected with the sealing cover;
and the telescopic hinge is respectively connected with the telescopic motor and the second end of the heat conducting piece and is used for controlling the heat conducting piece to extend or retract under the driving of the telescopic motor.
8. The single crystal furnace of claim 7, wherein the first end of the thermally conductive member is flush with the furnace interior wall when retracted.
9. The single crystal growing furnace of claim 1 wherein the inner wall of the through-hole is copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210967435.8A CN115287745B (en) | 2022-08-12 | 2022-08-12 | Single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210967435.8A CN115287745B (en) | 2022-08-12 | 2022-08-12 | Single crystal furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115287745A CN115287745A (en) | 2022-11-04 |
| CN115287745B true CN115287745B (en) | 2023-11-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210967435.8A Active CN115287745B (en) | 2022-08-12 | 2022-08-12 | Single crystal furnace |
Country Status (1)
| Country | Link |
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| CN (1) | CN115287745B (en) |
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| CN202030855U (en) * | 2011-03-16 | 2011-11-09 | 常州天合光能有限公司 | Mono-crystal furnace thermal field capable of increasing growth rate of mono-crystal furnace |
| CN203559151U (en) * | 2013-05-29 | 2014-04-23 | 西安隆基硅材料股份有限公司 | Rapid cooling device of single crystal furnace |
| CN204151452U (en) * | 2014-09-30 | 2015-02-11 | 宁夏隆基硅材料有限公司 | A kind of blowing out refrigerating unit of single crystal growing furnace |
| CN110453277A (en) * | 2019-08-28 | 2019-11-15 | 包头美科硅能源有限公司 | A kind of Czochralski method mono-crystal furnace thermal field quickly cooling device and cooling means |
| CN212955436U (en) * | 2020-06-29 | 2021-04-13 | 晶科能源有限公司 | Single crystal furnace system for crystal growth |
| CN216039930U (en) * | 2021-08-24 | 2022-03-15 | 银川隆基硅材料有限公司 | Cooling equipment |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW588127B (en) * | 2000-02-01 | 2004-05-21 | Komatsu Denshi Kinzoku Kk | Apparatus for pulling single crystal by CZ method |
-
2022
- 2022-08-12 CN CN202210967435.8A patent/CN115287745B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002357391A (en) * | 2001-06-01 | 2002-12-13 | Koito Ind Ltd | Electric furnace device |
| JP2004087869A (en) * | 2002-08-28 | 2004-03-18 | Hitachi High-Technologies Corp | Wafer treating device, wafer stage, and method of treating wafer |
| CN202030855U (en) * | 2011-03-16 | 2011-11-09 | 常州天合光能有限公司 | Mono-crystal furnace thermal field capable of increasing growth rate of mono-crystal furnace |
| CN203559151U (en) * | 2013-05-29 | 2014-04-23 | 西安隆基硅材料股份有限公司 | Rapid cooling device of single crystal furnace |
| CN204151452U (en) * | 2014-09-30 | 2015-02-11 | 宁夏隆基硅材料有限公司 | A kind of blowing out refrigerating unit of single crystal growing furnace |
| CN110453277A (en) * | 2019-08-28 | 2019-11-15 | 包头美科硅能源有限公司 | A kind of Czochralski method mono-crystal furnace thermal field quickly cooling device and cooling means |
| CN212955436U (en) * | 2020-06-29 | 2021-04-13 | 晶科能源有限公司 | Single crystal furnace system for crystal growth |
| CN216039930U (en) * | 2021-08-24 | 2022-03-15 | 银川隆基硅材料有限公司 | Cooling equipment |
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| Publication number | Publication date |
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| CN115287745A (en) | 2022-11-04 |
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