CN202025761U - Crimping type controlled silicon chip structure - Google Patents
Crimping type controlled silicon chip structure Download PDFInfo
- Publication number
- CN202025761U CN202025761U CN2011201373241U CN201120137324U CN202025761U CN 202025761 U CN202025761 U CN 202025761U CN 2011201373241 U CN2011201373241 U CN 2011201373241U CN 201120137324 U CN201120137324 U CN 201120137324U CN 202025761 U CN202025761 U CN 202025761U
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- China
- Prior art keywords
- silicon chip
- controlled silicon
- molybdenum piece
- molybdenum sheet
- controlled
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Abstract
The utility model discloses a crimping type controlled silicon chip structure comprising a controlled silicon chip, a gasket positioned on the cathode face of the controlled silicon chip and a lower molybdenum piece. The crimping type controlled silicon chip structure is characterized in that edges of the controlled silicon chip are provided with silicon rubber sleeves; an upper molybdenum piece is placed on the gasket; the upper molybdenum piece, the gasket and the cathode face of the controlled silicon chip are crimped together; the lower molybdenum piece and the anode face of the controlled silicon chip are crimped together; the gasket, the upper molybdenum piece and the lower molybdenum piece are positioned in the silicon rubber sleeves; the edges of the controlled silicon chip is in a double positive angle shape; and silicon rubber is filled in the angle. In the crimping type controlled silicon chip structure, the upper molybdenum piece, the lower molybdenum piece and the controlled silicon chip are crimped together, so that pressure exerted on the upper molybdenum piece and the lower molybdenum piece can be uniformly distributed on the controlled silicon chip, the controlled silicon chip is not easy to damage, and the passing rate of finished products is improved. As the edges of the controlled silicon chip is in the double positive angle shape, peak voltage of the controlled silicon chip can be increased, the area of the cathode face can not be reduced meanwhile, on-state voltage drop VTM can not be increased, and conduction loss is low.
Description
Technical field
The utility model relates to a kind of compression joint type controlled silicon chip structure.
Background technology
In producing the silicon controlled process, because controlled silicon chip is thin, crisp, frangible yielding, therefore adopt sintering process that the anode surface and the molybdenum sheet of controlled silicon chip is sintered together by aluminium foil usually, and with the bonding pad of the cathode plane of controlled silicon chip, like this behind the shell of packing into, controlled silicon chip can not be out of shape or goes to sticks and staves owing to pressure.But sintering process can reduce product qualified rate.When producing the high pressure drop controllable silicon, for adopting, the crest voltage that improves controlled silicon chip increases shaped negative angle structures, reduced the cathode plane area so greatly, cause on-state voltage drop V
TMHeight, conduction loss is big.
Summary of the invention
The technical problems to be solved in the utility model provides a kind of crest voltage height of controlled silicon chip, and conduction loss is little, the compression joint type controlled silicon chip structure that product qualified rate is high.
The compression joint type controlled silicon chip structure that the utility model relates to, comprise controlled silicon chip, be positioned at the pad of controlled silicon chip cathode plane, be positioned at the following molybdenum sheet of controlled silicon chip anode surface, its special character is: be provided with silica gel sheath at the controlled silicon chip edge, be placed with molybdenum sheet on the pad, the described molybdenum sheet of going up, pad is crimped on the controlled silicon chip cathode plane, described molybdenum sheet down is crimped on the controllable silicon anode surface, and pad, last molybdenum sheet and following molybdenum sheet are positioned at silica gel sheath, described controlled silicon chip edge be shaped as two positive angles, full-filling silicon rubber in the angle.
The utility model has the advantages that: will go up molybdenum sheet, following molybdenum sheet and controlled silicon chip and be crimped on together, and the pressure that is applied to earlier on the upper and lower molybdenum sheet can be given controlled silicon chip uniformly, controlled silicon chip is not fragile, has improved the qualification rate of finished product; Because the controlled silicon chip edge shape is two positive angles, can increase the crest voltage of controlled silicon chip, the cathode plane area can not reduce simultaneously, does not increase on-state voltage drop V
TM, conduction loss is little.
Description of drawings
Fig. 1 is a structural representation of the present utility model;
Among the figure: the last molybdenum sheet of 1-, 2-controlled silicon chip, molybdenum sheet under the 3-, 301-groove, 4-pad, 5-silica gel sheath, 6-silicon rubber, 7-steady pin.
Embodiment
As shown in Figure 1, the utility model has a controlled silicon chip 2, controlled silicon chip 2 edges be shaped as two positive angles, full-filling silicon rubber 6 in the angle.Edge at controlled silicon chip 2 applies the silica gel sheath 5 that electronics silica gel is moulded annular.Cathode plane at controlled silicon chip 2 is placed pad 4, and the pin of described pad 4 is bonded in the cathode plane of controlled silicon chip 2 by silicon rubber; Place on the pad 4 be used for drawing negative electrode on molybdenum sheet 1, described molybdenum sheet 1, pad 4 and controlled silicon chip 2 cathode planes gone up are crimped on together.Center at last molybdenum sheet 1 is provided with fairlead, and the gate lead in the enclosure cap is connected to the central gate pole of controlled silicon chip 2 through fairlead.Be used for drawing the following molybdenum sheet 3 of anode in the anode surface crimping of controlled silicon chip 2, described molybdenum sheet 1, pad 4 and the following molybdenum sheet 3 gone up is positioned at silica gel sheath 5, be provided with groove 301 in following molybdenum sheet 3 bottom surfaces, in groove 301, be fitted with steady pin 7, steady pin 7 other ends are inserted into the groove at the bottom of the shell, so that controlled silicon chip 2 is fixed.
Claims (1)
1. compression joint type controlled silicon chip structure, comprise controlled silicon chip, be positioned at the controlled silicon chip cathode plane pad, be positioned at the following molybdenum sheet of controlled silicon chip anode surface, it is characterized in that: be provided with silica gel sheath at the controlled silicon chip edge, be placed with molybdenum sheet on the pad, described upward molybdenum sheet, pad are crimped on the controlled silicon chip cathode plane, described molybdenum sheet down is crimped on the controllable silicon anode surface, and described pad, last molybdenum sheet and following molybdenum sheet are positioned at silica gel sheath, described controlled silicon chip edge be shaped as two positive angles, full-filling silicon rubber in the angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201373241U CN202025761U (en) | 2011-05-04 | 2011-05-04 | Crimping type controlled silicon chip structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201373241U CN202025761U (en) | 2011-05-04 | 2011-05-04 | Crimping type controlled silicon chip structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202025761U true CN202025761U (en) | 2011-11-02 |
Family
ID=44850703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011201373241U Expired - Fee Related CN202025761U (en) | 2011-05-04 | 2011-05-04 | Crimping type controlled silicon chip structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202025761U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105355614A (en) * | 2015-11-26 | 2016-02-24 | 国网智能电网研究院 | Pre-packaging single chip and preparation process thereof |
| CN109735227A (en) * | 2019-01-22 | 2019-05-10 | 黄山市七七七电子有限公司 | A kind of environment-friendly type compression joint type silicon chip corrosion barrier protection materials and its production technology |
| CN111128900A (en) * | 2018-10-30 | 2020-05-08 | 株洲中车时代电气股份有限公司 | Packaging structure of IGBT chip subunit and manufacturing method thereof |
-
2011
- 2011-05-04 CN CN2011201373241U patent/CN202025761U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105355614A (en) * | 2015-11-26 | 2016-02-24 | 国网智能电网研究院 | Pre-packaging single chip and preparation process thereof |
| CN105355614B (en) * | 2015-11-26 | 2020-09-04 | 国网智能电网研究院 | Pre-packaged single chip and preparation process thereof |
| CN111128900A (en) * | 2018-10-30 | 2020-05-08 | 株洲中车时代电气股份有限公司 | Packaging structure of IGBT chip subunit and manufacturing method thereof |
| CN111128900B (en) * | 2018-10-30 | 2021-06-08 | 株洲中车时代半导体有限公司 | Packaging structure of IGBT chip subunit and manufacturing method thereof |
| CN109735227A (en) * | 2019-01-22 | 2019-05-10 | 黄山市七七七电子有限公司 | A kind of environment-friendly type compression joint type silicon chip corrosion barrier protection materials and its production technology |
| CN109735227B (en) * | 2019-01-22 | 2021-04-09 | 黄山市七七七电子有限公司 | Environment-friendly crimping type silicon chip corrosion shielding protection material and production process thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111102 Termination date: 20150504 |
|
| EXPY | Termination of patent right or utility model |