CN104347556A - Diode packaging structure - Google Patents
Diode packaging structure Download PDFInfo
- Publication number
- CN104347556A CN104347556A CN201310312187.4A CN201310312187A CN104347556A CN 104347556 A CN104347556 A CN 104347556A CN 201310312187 A CN201310312187 A CN 201310312187A CN 104347556 A CN104347556 A CN 104347556A
- Authority
- CN
- China
- Prior art keywords
- substrate
- bonding block
- package structure
- diode package
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Wire Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to a semiconductor structure, and specifically relates to a diode packaging structure. The diode packaging structure comprises a substrate, a packaging body arranged at the upper end surface of the substrate, and a plurality of electrodes arranged at the lower end surface of the substrate. The upper end of the substrate is provided with a groove, the groove is internally provided with a tube core assembly, the upper end surface of the substrate is provided with a bonding block, the tube core assembly and the bonding block are connected through a lead wire, the packaging body and the substrate form a cavity, and the tube core assembly and the bonding block are arranged in the cavity. According to the invention, the problem of bonding between the tube core assembly and the electrodes is effectively solved, the connection between the tube core assembly and the bonding block is facilitated, the production process difficulty is lowered, the production efficiency is improved, the lead wire connecting the tube core assembly and the bonding block is not easily shaken and is not easily broken, and the quality of a manufactured product is enabled to be better. Besides, the diode packaging structure also has the advantages of good sealing performance, high heat dissipation performance and the like.
Description
Technical field
The present invention relates to semiconductor structure, specifically a kind of diode package structure.
Background technology
In existing diode package structure, mainly comprise substrate, die assemblies, packaging body and lead-in wire, in the diode package structure that power requirement is high, because diode overall dimension immobilizes, die assemblies needs to adopt multilayer tube core to fire and forms, so the heat dissipation problem of tube core not only will be considered in R&D process, but also the connectivity problem of electrode slice in die assemblies will be considered, the space formed due to substrate and packaging body is very little, so certain difficulty can be there is with electrode by going between to be connected in electrode slice, and in use due to lead-in wire, to rock the diode product easily causing producing of poor quality.
Summary of the invention
For above-mentioned weak point of the prior art, the present invention aim to provide a kind of heat dispersion better, process convenient diode package structure.
For solving the problems of the technologies described above, diode package structure of the present invention, they several electrodes comprising substrate, be arranged at the packaging body of substrate upper surface and be arranged at substrate lower surface, described substrate upper end has groove, be provided with die assemblies in this groove, described substrate upper surface is also provided with bonding block, and described die assemblies is connected by going between with bonding block, described packaging body and substrate form a chamber, and described die assemblies and bonding block are all arranged in this chamber.
Concrete, described die assemblies upper surface and bonding block upper end surface are in same plane.
Described die assemblies comprises several electrode slice, is provided with tube core between adjacent electrode sheet.
The quantity of described electrode slice is four.
Described several electrode comprises the first electrode and the second electrode that are arranged at substrate lower surface, and the first electrode is connected with die assemblies by the first wire, and the second electrode is connected with bonding block by the second wire.
Described bonding block adopts teleoseal or oxygen-free copper to be made.
Described packaging body adopts teleoseal to be made.
Described substrate is aluminium oxide ceramics, and alumina content is more than 92%.
Described lead-in wire adopt aluminum content be more than 99.99% aluminium wire or aluminum content be the Si-Al wire of 99%.
Diode package structure of the present invention, owing to being provided with bonding block in substrate upper surface, die assemblies is connected by going between with bonding block, efficiently solve the bonding problems of die assemblies and electrode, by arranging bonding block, not only facilitate die assemblies to be connected with bonding block, reduce producting process difficulty, improve production efficiency, and the lead-in wire of tube connector core assembly and bonding block not easily rocks, not easy fracture, makes the product quality produced better, in addition, the present invention also has the advantages such as good seal performance, heat dispersion be strong.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is diode package structure schematic diagram of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only a part of embodiment of the present invention, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
As shown in Figure 1, diode package structure of the present invention, its several electrodes that can comprise substrate 1, be arranged at the packaging body 2 of substrate 1 upper surface and be arranged at substrate 1 lower surface, described substrate 1 upper end has groove 11, be provided with die assemblies 3 in this groove 11, described substrate 1 upper surface is also provided with bonding block 4, and described die assemblies 3 is connected by lead-in wire 5 with bonding block 4, described packaging body 2 forms a chamber with substrate 1, and described die assemblies 3 and bonding block 4 are all arranged in this chamber.Bonding block 4 adopts teleoseal or oxygen-free copper to be made, described packaging body 2 adopts teleoseal to be made, described substrate 1 is aluminium oxide ceramics, alumina content is more than 92%, described lead-in wire 5 adopt aluminum content be more than 99.99% aluminium wire or aluminum content be the Si-Al wire of 99%, the present invention is provided with bonding block 4 due to end face on the base 1, die assemblies 3 is connected by lead-in wire 5 with bonding block 4, efficiently solve the bonding problems of die assemblies 3 and electrode, by arranging bonding block 4, not only facilitate die assemblies 3 to be connected with bonding block 4, reduce producting process difficulty, improve production efficiency, and tube connector core assembly 3 not easily rocks with the lead-in wire 5 of bonding block 4, not easy fracture, make the product quality produced better.
Concrete, described die assemblies 3 upper surface and bonding block 4 upper end surface are in same plane.Make tube connector core assembly 3 shorter with the lead-in wire 5 of bonding block 4 like this, more not easily rock, product quality is better, also can according to concrete actual conditions, the height of suitable adjustment bonding block 4, make bonding block 4 a little more than or a little less than place, die assemblies 3 upper surface plane.
Described die assemblies 3 comprises several electrode slice 31, is provided with tube core 32 between adjacent electrode sheet.The quantity of described electrode slice 31 is four.Due to operationally a large amount of heats can be produced at tube core 32, so electrode slice 31 can dispel the heat better, make product not fragile.
Described several electrode comprises the first electrode 6 of being arranged at substrate 1 lower surface and the second electrode 7, first electrode 6 is connected with die assemblies 3 by the first wire 8, and the second electrode 7 is connected with bonding block 4 by the second wire 9.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. a diode package structure, comprise substrate (1), be arranged at the packaging body (2) of substrate (1) upper surface and be arranged at several electrodes of substrate (1) lower surface, it is characterized in that: described substrate (1) upper end has groove (11), die assemblies (3) is provided with in this groove (11), described substrate (1) upper surface is also provided with bonding block (4), described die assemblies (3) is connected by go between (5) with bonding block (4), described packaging body (2) and substrate (1) form a chamber, described die assemblies (3) and bonding block (4) are all arranged in this chamber.
2. diode package structure according to claim 1, is characterized in that: described die assemblies (3) upper surface and bonding block (4) upper end surface are in same plane.
3. diode package structure according to claim 1, is characterized in that: described die assemblies (3) comprises several electrode slice (31), is provided with tube core (32) between adjacent electrode sheet.
4. diode package structure according to claim 3, is characterized in that: the quantity of described electrode slice (31) is four.
5. diode package structure according to claim 3, it is characterized in that: described several electrode comprises the first electrode (6) and the second electrode (7) that are arranged at substrate (1) lower surface, first electrode (6) is connected with die assemblies (3) by the first wire (8), and the second electrode (7) is connected with bonding block (4) by the second wire (9).
6. diode package structure according to claim 1, is characterized in that: described bonding block (4) adopts teleoseal or oxygen-free copper to be made.
7. diode package structure according to claim 1, is characterized in that: described packaging body (2) adopts teleoseal to be made.
8. diode package structure according to claim 1, is characterized in that: described substrate (1) is aluminium oxide ceramics, and alumina content is more than 92%.
9. the diode package structure according to any one of claim 1-8, is characterized in that: described lead-in wire (5) adopt aluminum content be more than 99.99% aluminium wire or aluminum content be the Si-Al wire of 99%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310312187.4A CN104347556B (en) | 2013-07-23 | 2013-07-23 | Diode package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310312187.4A CN104347556B (en) | 2013-07-23 | 2013-07-23 | Diode package structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104347556A true CN104347556A (en) | 2015-02-11 |
| CN104347556B CN104347556B (en) | 2017-10-10 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310312187.4A Active CN104347556B (en) | 2013-07-23 | 2013-07-23 | Diode package structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104347556B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109300864A (en) * | 2018-10-31 | 2019-02-01 | 中国振华集团永光电子有限公司（国营第八七三厂） | A kind of small axially mounted diode |
| CN112186043A (en) * | 2020-09-30 | 2021-01-05 | 中国振华集团永光电子有限公司（国营第八七三厂） | Glass passivation surface-mounted diode and manufacturing method thereof |
| CN114497234A (en) * | 2022-01-25 | 2022-05-13 | 先之科半导体科技(东莞)有限公司 | Low-loss small-volume Schottky diode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040207058A1 (en) * | 2002-12-30 | 2004-10-21 | Sohn Young Ho | Side braze packages |
| CN101136384A (en) * | 2005-12-20 | 2008-03-05 | 半导体元件工业有限责任公司 | Semiconductor package structure and method of manufacture |
| US20110124143A1 (en) * | 2007-06-29 | 2011-05-26 | Fujitsu Limited | Packaged device and method of manufacturing the same |
-
2013
- 2013-07-23 CN CN201310312187.4A patent/CN104347556B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040207058A1 (en) * | 2002-12-30 | 2004-10-21 | Sohn Young Ho | Side braze packages |
| CN101136384A (en) * | 2005-12-20 | 2008-03-05 | 半导体元件工业有限责任公司 | Semiconductor package structure and method of manufacture |
| US20110124143A1 (en) * | 2007-06-29 | 2011-05-26 | Fujitsu Limited | Packaged device and method of manufacturing the same |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109300864A (en) * | 2018-10-31 | 2019-02-01 | 中国振华集团永光电子有限公司（国营第八七三厂） | A kind of small axially mounted diode |
| CN112186043A (en) * | 2020-09-30 | 2021-01-05 | 中国振华集团永光电子有限公司（国营第八七三厂） | Glass passivation surface-mounted diode and manufacturing method thereof |
| CN114497234A (en) * | 2022-01-25 | 2022-05-13 | 先之科半导体科技(东莞)有限公司 | Low-loss small-volume Schottky diode |
| CN114497234B (en) * | 2022-01-25 | 2022-12-06 | 先之科半导体科技(东莞)有限公司 | Low-loss small-volume Schottky diode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104347556B (en) | 2017-10-10 |
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