CN105810434B - A kind of thin high-power membrane capacitance stem - Google Patents

A kind of thin high-power membrane capacitance stem Download PDF

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Publication number
CN105810434B
CN105810434B CN201510392885.9A CN201510392885A CN105810434B CN 105810434 B CN105810434 B CN 105810434B CN 201510392885 A CN201510392885 A CN 201510392885A CN 105810434 B CN105810434 B CN 105810434B
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China
Prior art keywords
skeleton
lead
conductive rubber
heat conductive
stem
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CN201510392885.9A
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CN105810434A (en
Inventor
徐道安
毛翔宇
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Jiangsu high energy rongchuang Electric Co.,Ltd.
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YANGZHOU KAIPU ELECTRONICS CO Ltd
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Abstract

A kind of novel thin high-power membrane capacitance stem, it is provided with skeleton, skeleton is located at the centre position of stem, skeleton is provided with heat conductive rubber, heat conductive rubber is located at two sides of skeleton respectively, and skeleton is symmetrical structure, and gap is provided between skeleton, heat conductive rubber height on both sides on skeleton are inconsistent, and skeleton is mouth shape structure.It by being provided with heat conductive rubber on skeleton, can be very good, by the heat derives of stem, to be advantageous to distributing for stem self heat, so as to further improve the heat endurance of electric heater, skeleton used to the skeleton of aluminium panels, the mechanical performance of stem can be optimized.

Description

A kind of thin high-power membrane capacitance stem
Technical field
The present invention relates to a kind of stem, and in particular to a kind of thin high-power membrane capacitance stem.
Background technology
Thin film capacitor is to work as electrode with metallized film, by itself and poly- ethyl ester, polypropylene, and polystyrene or makrolon Deng film, after overlapping from both ends, cylindric construction is formed on appearance stem has core thin film capacitor.There is core thin-film electro Container is the main flow structure of the big work(thin film capacitor of current high pressure and is widely used in new energy(Solar energy, wind energy etc.), it is electronic The fields such as automobile.As the poly- ethyl ester (0.020~0.030W/ (m K)) of capacitor dielectric material, polypropylene (~0.622W/ (m K)), film itself thermal conductivity such as polystyrene (0.039~0.041W/ (m K)) or makrolon (~0.19 W/ (m K)) Coefficient is low (being often used as heat-barrier material), and the small radiating condition of capacitor own vol is poor, easily causes capacitor fully loaded There is capacitor area thermal breakdown phenomenon in long-play under power, occurs that electric capacity burns when serious.Capacitor is improved to be fully loaded with Ability to work on the one hand can be by reducing capacitor gilding layer with layer contact berrier, gilding layer and the contact resistance of lead is deposited Electric capacity is reduced Deng reduction capacitor equivalent resistance and by capacitor arrangement and gage system, the selection of lead material and trend etc. Device self-inductance, capacitor induction reactance is reduced, its own radiating condition can also be improved by changing capacitor arrangement, improve capacitor Heat endurance, reduce thermal breakdown of capacitor possibility.At present, Large Copacity thin film capacitor generally use core column structure, and stem Material be usually the low Heat Conduction Material such as PVC (0.14~0.17 W/ (m K)), be unfavorable for the radiating of capacitor, this stem is from changing Enter core column structure to set out, by selecting core column material, the improved method such as structure design, make stem from single skeleton function, Become that not only there is skeleton function, and there is the Novel button stem of lead and heat sinking function simultaneously.
The content of the invention
It is an object of the invention to provide a kind of a kind of simple in construction, good thin high-power membrane capacitance core of insulation effect Post.
The present invention the content of the invention be:A kind of thin high-power membrane capacitance stem, is provided with skeleton, described skeleton Positioned at the centre position of stem, described skeleton is provided with heat conductive rubber, and described heat conductive rubber is located at the both sides of skeleton respectively Side, described skeleton are symmetrical structure, are provided with gap between described skeleton, the heat conductive rubber height on both sides on described skeleton Inconsistent, described skeleton is mouth shape structure.
Heat conductive rubber is provided with the outside of described skeleton, described heat conductive rubber is externally provided with dielectric layer, described dielectric layer position In the periphery of skeleton, described skeleton has backing plate, and weld tabs is provided with by described backing plate.
Lead is provided with the top of described skeleton, described lead is divided into lead B1, lead B2 and lead A, described lead A Positioned at lead B1 and lead B2 centre position, dielectric layer is connected with described lead B1 and lead B2.
Described skeleton is aluminium panels skeleton, and described skeleton is respectively equipped with backing plate up and down, and described backing plate is provided with Boss is connected, described connection boss is blocked heat conductive rubber, and described heat conductive rubber is between dielectric layer and skeleton.
It is an advantage of the invention that:By being provided with heat conductive rubber on skeleton, can be very good, by the heat derives of stem, to have Beneficial to distributing for stem self heat, so as to further improve the heat endurance of electric heater, skeleton is used to the bone of aluminium panels Frame, the mechanical performance of stem can be optimized so that the performance of stem optimizes significantly, can save manufacturing cost.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention.
In figure:1 is skeleton, and 2 be heat conductive rubber, and 3 be dielectric layer, and 4 be weld tabs, and 5 be lead.
Embodiment
The present invention is further described below in conjunction with the accompanying drawings.
A kind of thin high-power membrane capacitance stem, is provided with skeleton 1, and skeleton 1 is located at the centre position of stem, skeleton 1 is provided with heat conductive rubber 2, and heat conductive rubber 2 is located at two sides of skeleton respectively, and skeleton 1 is symmetrical structure, is provided between skeleton 1 Gap, the heat conductive rubber height on both sides on skeleton 1 are inconsistent, and skeleton 1 is mouth shape structure, and the outside of skeleton 1 is provided with heat conductive rubber 2, heat conductive rubber 2 is externally provided with dielectric layer 3, and dielectric layer 3 is located at the periphery of skeleton, and the 1 of skeleton has backing plate, and weldering is provided with by backing plate Piece 4, skeleton top are provided with lead 5, and lead is divided into lead B1, lead B2 and lead A, and lead A is located at lead B1's and lead B2 Dielectric layer is connected with centre position, lead B1 and lead B2, skeleton 1 is aluminium panels skeleton, and skeleton is respectively equipped with pad about 1 Plate, backing plate are provided with connection boss, and connection boss is blocked heat conductive rubber, heat conductive rubber 2 be located at dielectric layer and skeleton it Between.

Claims (2)

1. a kind of thin high-power membrane capacitance stem, is provided with skeleton, it is characterised in that:Described skeleton is located at stem Centre position, described skeleton are provided with heat conductive rubber, and described heat conductive rubber is located at two sides of skeleton, described bone respectively Frame is symmetrical structure, is provided with gap between described skeleton, and the heat conductive rubber height on both sides on described skeleton are inconsistent, described Skeleton be mouth shape structure, be provided with heat conductive rubber on the outside of described skeleton, described heat conductive rubber is externally provided with dielectric layer, described Dielectric layer be located at the periphery of skeleton, described skeleton has backing plate, weld tabs, described skeleton is provided with by described backing plate Top is provided with lead, and described lead is divided into lead B1, lead B2 and lead A, described lead A are located at lead B1 and lead B2 Centre position, be connected with dielectric layer under described lead B1 and lead B2.
A kind of 2. thin high-power membrane capacitance stem according to claim 1, it is characterised in that:Described skeleton is Aluminium panels skeleton, described skeleton are respectively equipped with backing plate up and down, and described backing plate is provided with connection boss, and described connection is convex Platform is blocked heat conductive rubber, and described heat conductive rubber is between dielectric layer and skeleton.
CN201510392885.9A 2015-07-07 2015-07-07 A kind of thin high-power membrane capacitance stem Active CN105810434B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510392885.9A CN105810434B (en) 2015-07-07 2015-07-07 A kind of thin high-power membrane capacitance stem

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510392885.9A CN105810434B (en) 2015-07-07 2015-07-07 A kind of thin high-power membrane capacitance stem

Publications (2)

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CN105810434A CN105810434A (en) 2016-07-27
CN105810434B true CN105810434B (en) 2017-12-05

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Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2306558Y (en) * 1997-07-04 1999-02-03 梁浩 Internal heat radiation capacitor
CN201946431U (en) * 2010-12-20 2011-08-24 佛山市顺德区伦教胜业电器有限公司 Capacitor with good heat dissipation performance
JP2014192421A (en) * 2013-03-28 2014-10-06 Hitachi Aic Inc Wound capacitor
CN203706882U (en) * 2013-12-21 2014-07-09 铜陵源丰电子有限责任公司 Improved thin film capacitor
CN204884886U (en) * 2015-07-07 2015-12-16 扬州凯普电子有限公司 Novel thin high -pressure high -power membrane the capacitor post

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Effective date of registration: 20191011

Address after: 225600 Daizhuang Road, industrial concentration zone, Gaoyou town, Gaoyou City, Yangzhou City, Jiangsu Province

Patentee after: Yangzhou Kaipu Technology Co., Ltd.

Address before: 225600 Industrial Park, Gaoyou Town, Yangzhou, Jiangsu, Gaoyou

Patentee before: Yangzhou Kaipu Electronics Co., Ltd.

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Address after: 225600 Daizhuang Road, industrial concentration zone, Gaoyou town, Gaoyou City, Yangzhou City, Jiangsu Province

Patentee after: Jiangsu high energy rongchuang Electric Co.,Ltd.

Address before: 225600 Daizhuang Road, industrial concentration zone, Gaoyou town, Gaoyou City, Yangzhou City, Jiangsu Province

Patentee before: Yangzhou Kaipu Technology Co.,Ltd.