CN201956679U - Connecting structure for improving radio-frequency performance of off-chip ESD (Electro-Static Discharge) protection circuit - Google Patents
Connecting structure for improving radio-frequency performance of off-chip ESD (Electro-Static Discharge) protection circuit Download PDFInfo
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- CN201956679U CN201956679U CN2011200108639U CN201120010863U CN201956679U CN 201956679 U CN201956679 U CN 201956679U CN 2011200108639 U CN2011200108639 U CN 2011200108639U CN 201120010863 U CN201120010863 U CN 201120010863U CN 201956679 U CN201956679 U CN 201956679U
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- protection circuit
- esd protection
- bonding line
- bonding wire
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Abstract
The utility model discloses a connecting structure for improving the radio-frequency performance of an off-chip ESD (Electro-Static Discharge) protection circuit. The connecting structure comprises an off-chip ESD protection circuit and a bonding wire, wherein the bonding wire comprises a first bonding wire and a second bonding wire; the first bonding wire and the second bonding wire are connected from end to end in series in a signal transmission line, so as to separate the signal transmission line into two sections of a first transmission line and a second transmission line; and the input port of the off-chip ESD protection circuit is connected with the joint point of the first bonding wire and the second bonding wire. The connecting structure can eliminate the trapped wave problem in the existing ESD protection solution, enhance the stability of the clamping voltage of the ESD protection circuit, improve the affection of the ESD protection circuit to system impedance matching and expand the application frequency range of the off-chip ESD protection circuit under the conditions of not changing the parasitic parameter of the ESD protection circuit and not decreasing the antistatic capacity of the ESD protection circuit.
Description
Technical field
The utility model relates to the outer esd protection circuit of the sheet that is used for RF application.
Background technology
Electrostatic charge all exists at occurring in nature constantly, adjacent to each other or when directly contacting when two objects with different electrostatic potentials, the transfer of electrostatic charge can take place between two objects, form electric current, this process is exactly static discharge (ESD, an Electro-Static discharge) process.The ESD duration is very short, and the typical amounts level is from 10ns to 100ns; Discharging current is big, and excursion is from 1 ampere to tens amperes.In the whole life of integrated circuit (IC), from make, encapsulation, transportation, assembling even the IC product of finishing, all constantly be faced with the impact of static discharge, ESD is the most general factor during all IC lost efficacy, if do not take measures, ESD will cause damage difficult to the appraisal to integrated circuit or electronic product.
Alleviated because the IC that causes of ESD loses efficacy two kinds of methods were arranged usually: the one, in any operation process such as the manufacturing of IC product, production, transportation, test, use, guarantee correct operation and ground connection, that is to say the generation that prevents esd event from the source; Another kind method is to increase protective circuit near the power port, signal input output end mouth at IC, when IC is impacted by ESD, can make the big current bypass of ESD it without core circuit, and clamp the voltage at lower level.Because mostly the generation of esd event is human factor: the uncertainty that uncertainty that the ESD management is lack of standardization, the staff operates or user use etc.; be difficult to accomplish the destruction of avoiding ESD to cause from the source, it is particularly important therefore to increase effective esd protection circuit near the power port of IC, signal input output end mouth end.
The operation principle of protective circuit is: when esd event comes temporarily, esd protection circuit can in time be opened, the big electric current of the ESD that releases, and clamp the voltage at lower level, thus avoid core circuit to be subjected to big electric current or high-tension influence and lost efficacy; When the core circuit operate as normal, esd protection circuit is closed, and it is transparent that the parasitic parameter of esd protection circuit keeps when the core circuit operate as normal, does not influence the performance of core circuit.Therefore need be from the performance quality of antistatic effect and two aspects measurements of esd protection circuit radio-frequency performance esd protection circuit.Esd protection circuit can be with an electric capacity (C
ESD) come equivalence, be generally several pF, even have only several pF at zero point, when esd protection circuit is applied to lower frequency, when closing, esd protection circuit is equivalent to open circuit, can the performance of core circuit not exerted an influence.Yet; when esd protection circuit is applied to radio frequency (RF) even higher frequency; its parasitic parameter has obviously had influence on the performance of RF circuit; if do not consider the ghost effect that esd protection circuit causes; then can destroy the impedance matching of RF circuit, cause the RFIC performance to comprise gain, reflection coefficient, the linearity, power and noise factor severe exacerbation.Therefore, when design RF-ESD protective circuit, need at first to guarantee that esd protection circuit has good radio-frequency performance.
The solution of existing radio system input, output port esd protection is: directly load esd protection circuit near 50 Ω transmission lines the port, as shown in Figure 1.Characteristics simple to operate, that be easy to realize that this solution has.But because the parasitic parameter of chip own is connected in series with the stray inductance of encapsulation bonding line (bonding wire); equivalence is that a series connection resonant tank is connected in parallel on the signal transmission pathway; series resonant tank can be in a certain frequency resonance; this moment the impedance loop minimum; part signal can directly be transferred to ground by esd protection circuit, causes signal to produce ripple and falls into.When if the bandwidth of operation of radio system comprises the resonance frequency of esd protection circuit, can have a strong impact on the impedance matching of circuit, radio-frequency performances such as the power output of reduction circuit, gain, efficient.In addition, because bonding line is connected on the esd protection circuit branch road, when the ESD electric current was released ground by the road of esd protection circuit, the stray inductance impedance meeting of bonding line caused esd protection circuit branch road clamping voltage instability.
Summary of the invention
The utility model purpose is: at the deficiency of existing application esd protection circuit outside the sheet of radio system; a kind of syndeton of utilizing bonding line to improve the outer esd protection circuit radio-frequency performance of sheet has been proposed; can not change the parasitic parameter of esd protection circuit own, not reduce under the prerequisite of esd protection circuit antistatic effect; eliminate the sunken problem of ripple that existing esd protection solution is caused; improve the stability of esd protection circuit clamping voltage; improve the influence of esd protection circuit, expand the applying frequency scope of the outer esd protection circuit of sheet the system impedance coupling.
The technical solution of the utility model is: a kind of syndeton of improving the outer esd protection circuit radio-frequency performance of sheet; comprise outer esd protection circuit of sheet and bonding line; described bonding line comprises first bonding line and second bonding line; described first bonding line and the second bonding line headtotail are connected in the signal transmssion line; signal transmssion line is separated into two sections of first transmission line and second transmission lines, and the input port of described outer esd protection circuit is connected on the tie point of first bonding line and second bonding line.
Further, described a kind of syndeton of improving the outer esd protection circuit radio-frequency performance of sheet, described outer esd protection circuit is the esd protection circuit of diode string structure, or the esd protection circuit of darlington structure, or distributed esd protection circuit.
Further, in described a kind of syndeton of improving the outer esd protection circuit radio-frequency performance of sheet, described bonding line is the metallic bond zygonema.Preferably, adopt gold bonding wire.
The utility model has the advantages that: can not change the parasitic parameter of esd protection circuit own, not reduce under the prerequisite of esd protection circuit antistatic effect, can improve the radio-frequency performance of esd protection circuit, eliminate the sunken problem of ripple that existing esd protection solution is caused; Expanded the applying frequency scope of the outer esd protection circuit of sheet; Can improve the stability of esd protection circuit clamping voltage; Can make the outer esd protection circuit of sheet on needed frequency, see into the impedance that all has 50 Ω,, and also have impedance matching degree preferably with 50 Ω radio systems near the frequency band this frequency with 50 Ω radio system Perfect Matchings from two ports.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further described:
Fig. 1 is the syndeton schematic diagram of the common esd protection circuit of prior art;
Fig. 2 is the syndeton schematic diagram of of the present utility model outer esd protection circuit;
Fig. 3 is the equivalent circuit theory figure of the syndeton of of the present utility model outer esd protection circuit;
Fig. 4 is the impedance matching property figure of the syndeton of of the present utility model outer esd protection circuit;
Fig. 5 is signal attenuation characteristic comparison diagram under the syndeton of the esd protection circuit of signal attenuation characteristic and prior art under the syndeton that adopts of the present utility model outer esd protection circuit;
Fig. 6 is signal reflex loss characteristic comparison diagram under the syndeton of the esd protection circuit of signal reflex loss characteristic and prior art under the syndeton that adopts of the present utility model outer esd protection circuit.
Wherein: 1 outer esd protection circuit; 2 first bonding lines; 3 second bonding lines; 4 first transmission lines; 5 second transmission lines.
Embodiment
Embodiment: any port of system all needs esd protection circuit, to prevent electrostatic breakdown, mainly contains power port, signal input port, signal output port.Wherein power port does not relate to the transmission of signal, and is lower to the requirement of esd protection circuit, only needs to consider the antistatic effect of esd protection circuit.Signal input port and signal output port are the initiating terminal and the end end of signal transmission pathway, therefore not only require the outer esd protection circuit of sheet to have high antistatic effect, also require it to have good radio-frequency performance.
As shown in Figure 2, as embodiment, radio system is defaulted as 50 Ω systems with the course of work of input port place esd protection circuit.The outer improved syndeton of esd protection circuit of sheet is: the first bonding line 2(bonding wire) and second bonding line 3 end to end be connected in the signal transmssion line of 50 Ω; one end ground connection of the outer esd protection circuit 1 of sheet; input port (being the outer unique input pad of esd protection circuit of sheet) is connected on the tie point of two bonding lines; the outer esd protection circuit of sheet is connected in parallel between signal transmssion line and the ground; the input port of the outer esd protection circuit 1 of sheet links to each other with first transmission line 4 by first bonding line 2, links to each other with second transmission line 5 by second bonding line 3.Because this syndeton does not change the structure and the characteristic of the outer esd protection circuit of sheet itself; and bonding line has very high withstand voltage and current carrying capacity, so the syndeton of the outer esd protection circuit of this film can't reduce the antistatic effect of esd protection circuit.
The equivalent circuit theory figure of the outer improved syndeton of esd protection circuit of this film as shown in Figure 3.L wherein
BStray inductance, C for bonding line
ESDParasitic capacitance for the outer esd protection circuit of sheet.This connection is transferred to the stray inductance that bonding line produced on the transmission channel of signal, has eliminated the stray inductance on the outer esd protection circuit branch road of sheet, has therefore eliminated the ripple that existing esd protection solution caused and has fallen into.
Because described syndeton has been eliminated the bonding line stray inductance impedance on the esd protection circuit branch road; therefore having solved the impedance of bonding line stray inductance causes the unsettled defective of esd protection circuit branch road clamping voltage, has improved the stability of esd protection circuit clamping voltage.
The syndeton of the outer esd protection circuit of this sheet can equivalence be three rank matching network structures; physical parameter by the appropriate design bonding line; can make described outer esd protection circuit on needed frequency, see into the impedance that all has 50 Ω from input port, two ports of output port; with 50 Ω radio system Perfect Matchings, and also has impedance matching degree preferably with 50 Ω radio systems near the frequency band this frequency.Fig. 4 is the impedance matching property figure on the required frequency, and after the 50 Ω impedances process concatenated key zygonema, impedance variation trend is shown in the curve among the figure 1; Through behind the esd protection circuit in parallel, impedance variation trend is shown in the curve among the figure 2; After passing through the concatenated key zygonema again, impedance variation trend is shown in the curve among the figure 3, and by adjusting the bonding line physical parameter, impedance is transformed to 50 Ω at last again.Therefore the outer esd protection circuit structure of this sheet can with 50 Ω radio system Perfect Matchings.With respect to the outer esd protection circuit syndeton of the sheet of prior art, this syndeton has reduced loss and the decay when signal passes through, and has improved the impedance matching degree of esd protection circuit, has expanded the applying frequency scope of the outer esd protection circuit of sheet.
The outer esd protection circuit syndeton of this sheet also equivalence is three rank low-pass filter structures.Three rank low-pass filter structures have higher by frequency with respect to the series resonance structure.Adopt under the syndeton of the esd protection circuit of signal attenuation characteristic and prior art under the syndeton of of the present utility model outer esd protection circuit signal attenuation characteristic comparison diagram as shown in Figure 5; adopt under the syndeton of the esd protection circuit of signal reflex loss characteristic and prior art under the syndeton of of the present utility model outer esd protection circuit signal reflex loss characteristic comparison diagram as shown in Figure 6; wherein curve m1 is the characteristics of signals curve under the syndeton of esd protection circuit of prior art, and m2 is the characteristics of signals curve under the syndeton of of the present utility model outer esd protection circuit.Observe contrast as can be known; with respect to the influence of the syndeton of the esd protection circuit that adopts prior art to the signal transmission; when adopting the syndeton of of the present utility model outer esd protection circuit can make signal via the outer esd protection circuit structure of sheet; the decay of signal obviously reduces, and the reflection loss of signal obviously reduces.Therefore; the syndeton of utilizing bonding line to improve the outer esd protection circuit radio-frequency performance of sheet can improve the radio-frequency performance of esd protection circuit under the prerequisite that does not influence antistatic effect; expand the applying frequency scope of esd protection circuit, guarantee that esd protection circuit does not influence the transmission of signal in broadband.
Described outer esd protection circuit can be the diode string structure esd protection circuit, also can adopt the darlington structure esd protection circuit; Can be an independent esd protection circuit, also can be distributed esd protection circuit, promptly multistage esd protection circuit.
Described bonding line is generally gold bonding wire, also can select other metallic bond zygonemas.The inductance parameters of bonding line mainly contains parameters such as bonding line dielectric constant, two-end-point distance, bonding line sagitta to be determined, can adopt the equivalent inductance of method reduction bonding lines such as bonding line in parallel.
When signal input port suffers esd event; high voltage that is produced by esd event and big electric current are transferred to esd protection circuit rapidly by transmission line and bonding line input pad place; when input pad place voltage reaches the cut-in voltage of esd protection circuit; esd protection circuit unlatching work; esd protection circuit arrives certain numerical value with voltage clamp; and the big electric current of releasing and producing by esd event, the destruction of so just having avoided system produced by esd event.The cut-in voltage of esd protection circuit, clamping voltage, discharge capacity can be regulated by appropriate design.
When system's operate as normal, when not having esd event to produce, signal enters from 50 Ω input ports, along the transmission of transmission line signals path, arrives 50 Ω radio systems through the bonding line in the outer esd protection circuit of sheet.According to the knowledge of matching network and filter as can be known, the outer esd protection circuit syndeton equivalence of described this sheet is three rank low-pass filter structures, also is three rank T type matching network structures.Three rank low-pass filter structures have higher by frequency with respect to the series resonance structure; By the physical parameter of appropriate design bonding line, three rank T type matching network structures can make the outer esd protection circuit of sheet see into that from two ports the impedance that all has 50 Ω is (as the port Impedance Z Fig. 3 on needed frequency
1And Z
2), with 50 Ω radio system Perfect Matchings, and also have impedance matching degree preferably with 50 Ω radio systems near the frequency band this frequency.
The above only is a preferred embodiment of the present utility model, can not limit the scope that the utility model is implemented with this, and all simple conversion of doing according to the utility model claim and description all should still belong to protection range of the present utility model.
Claims (4)
1. one kind is improved the sheet syndeton of esd protection circuit radio-frequency performance outward; comprise outer esd protection circuit (1) of sheet and bonding line; it is characterized in that: described bonding line comprises first bonding line (2) and second bonding line (3); described first bonding line (2) and second bonding line (3) headtotail are connected in the signal transmssion line; signal transmssion line is separated into (5) two sections of first transmission line (4) and second transmission lines, and the input port of described outer esd protection circuit (1) is connected on the tie point of first bonding line (2) and second bonding line (3).
2. according to a kind of syndeton of improving the outer esd protection circuit radio-frequency performance of sheet described in the claim 1; it is characterized in that: described outer esd protection circuit (1) is the esd protection circuit of diode string structure; or the esd protection circuit of darlington structure, or distributed esd protection circuit.
3. according to a kind of syndeton of improving the outer esd protection circuit radio-frequency performance of sheet described in the claim 1, it is characterized in that: described bonding line is the metallic bond zygonema.
4. according to a kind of syndeton of improving the outer esd protection circuit radio-frequency performance of sheet described in the claim 3, it is characterized in that: described bonding line is a gold bonding wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200108639U CN201956679U (en) | 2011-01-14 | 2011-01-14 | Connecting structure for improving radio-frequency performance of off-chip ESD (Electro-Static Discharge) protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200108639U CN201956679U (en) | 2011-01-14 | 2011-01-14 | Connecting structure for improving radio-frequency performance of off-chip ESD (Electro-Static Discharge) protection circuit |
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| Publication Number | Publication Date |
|---|---|
| CN201956679U true CN201956679U (en) | 2011-08-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200108639U Expired - Lifetime CN201956679U (en) | 2011-01-14 | 2011-01-14 | Connecting structure for improving radio-frequency performance of off-chip ESD (Electro-Static Discharge) protection circuit |
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| CN (1) | CN201956679U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102255301A (en) * | 2011-01-14 | 2011-11-23 | 苏州英诺迅科技有限公司 | Connection structure for improving radio-frequency performance of off chip ESD (Electro-Static Discharge) protection circuit |
| CN103531580A (en) * | 2012-07-06 | 2014-01-22 | 联咏科技股份有限公司 | Chip packaging structure |
| CN106501609A (en) * | 2016-10-18 | 2017-03-15 | 兰州空间技术物理研究所 | A kind of semiconductor laser hyperfrequency Microwave Impedance matching process |
-
2011
- 2011-01-14 CN CN2011200108639U patent/CN201956679U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102255301A (en) * | 2011-01-14 | 2011-11-23 | 苏州英诺迅科技有限公司 | Connection structure for improving radio-frequency performance of off chip ESD (Electro-Static Discharge) protection circuit |
| CN103531580A (en) * | 2012-07-06 | 2014-01-22 | 联咏科技股份有限公司 | Chip packaging structure |
| CN103531580B (en) * | 2012-07-06 | 2016-08-03 | 联咏科技股份有限公司 | Chip-packaging structure |
| CN106501609A (en) * | 2016-10-18 | 2017-03-15 | 兰州空间技术物理研究所 | A kind of semiconductor laser hyperfrequency Microwave Impedance matching process |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110831 |
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| CX01 | Expiry of patent term |