CN110492864A - A kind of encapsulating structure of bulk accoustic wave filter and the manufacturing method of the filter - Google Patents
A kind of encapsulating structure of bulk accoustic wave filter and the manufacturing method of the filter Download PDFInfo
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- CN110492864A CN110492864A CN201910734509.1A CN201910734509A CN110492864A CN 110492864 A CN110492864 A CN 110492864A CN 201910734509 A CN201910734509 A CN 201910734509A CN 110492864 A CN110492864 A CN 110492864A
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- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000003990 capacitor Substances 0.000 claims description 31
- 230000008878 coupling Effects 0.000 claims description 10
- 238000010168 coupling process Methods 0.000 claims description 10
- 238000005859 coupling reaction Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 238000004070 electrodeposition Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 8
- 238000009434 installation Methods 0.000 description 6
- 230000005764 inhibitory process Effects 0.000 description 5
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003032 molecular docking Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
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- 230000015572 biosynthetic process Effects 0.000 description 1
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- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
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- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The present invention relates to wave filter technology fields, the particularly encapsulating structure and method of a kind of bulk accoustic wave filter, the encapsulating structure, including the first chip, multiple first resonators are set on the first chip, multiple first resonators connect to form series circuit, connect the first pin on the route between two adjacent the first resonators；Multiple second resonators, each equal series reactor of second resonator are arranged on the second chip for second chip, and one end of the separate inductor of each second resonator is equipped with the second pin, and inductor is equipped with ground pin far from one end of the second resonator；First chip and second chip are superimposed to form encapsulating structure, and in the inside of encapsulating structure, the first pin and second pin bonding make multiple first resonators and multiple second resonators constitute filter.Technical solution of the present invention, resonator occupied area highest can reduce half, and using the filter of this encapsulating structure, size highest compared with existing filter can reduce 30%.
Description
Technical field
The present invention relates to wave filter technology field, the particularly a kind of encapsulating structure of bulk accoustic wave filter and filtering
The manufacturing method of device.
Background technique
With the quickening of communication equipment miniaturization and high-performance trend, to radio-frequency front-end, more stringent requirements are proposed.It is penetrating
In frequency communication front-end, filter and duplexer and multiplexer occupy biggish size, therefore the size for reducing filter is compeled
In the eyebrows and eyelashes.Existing filter package is limited by chip size, cannot be further reduced, therefore reduces the chip size of filter
It is to reduce to encapsulate the most fundamental solution.
Existing filter, as shown in Figure 1, manufacture series connection and parallel resonator generally on a chips, by simultaneously
On connection resonator plus mass loading is to change frequency, and is filtered setting for device using the difference on the frequency of series connection and parallel resonator
Meter.
Summary of the invention
In view of this, the main object of the present invention is to provide the encapsulating structure and the filter of a kind of bulk accoustic wave filter
Manufacturing method facilitates the size for reducing filter.
To achieve the above object, according to an aspect of the invention, there is provided a kind of encapsulating structure of bulk accoustic wave filter.
Bulk accoustic wave filter of the invention includes: the first chip, and multiple first resonators are arranged on first chip, more
A first resonator connects to form series circuit, connects first on the route between first resonator of adjacent two
Pin；Multiple second resonators, each equal series inductance of second resonator is arranged on second chip in second chip
Device, one end far from the inductor of each second resonator are equipped with the second pin, and the inductor is far from described the
One end of two resonators is equipped with ground pin；First chip and second chip are superimposed to form encapsulating structure, described
The inside of encapsulating structure, first pin and second pin bonding, make multiple first resonators and multiple described
Second resonator constitutes filter.
Optionally, the encapsulating structure meets one or several in the following conditions: electrode under first resonator
Thickness is different with the thickness of electrode under second resonator；The thickness of the first resonator piezoelectric layer and second resonance
The thickness of device piezoelectric layer is different；The thickness of the first resonator top electrode and the thickness of the second resonator top electrode are not
Together.
Optionally, the material of the first resonator piezoelectric layer is different with the material of the second resonator piezoelectric layer.
It optionally, further include the first electrode on first chip, and the on second chip
Two electrodes, the first electrode and the second electrode position are opposite to form capacitor.
Optionally, the relative area between the first electrode and the second electrode and/or distance are arranged to make institute
The capacitance for stating capacitor is 0.005pF to 2pF.
Optionally, first chip is equipped with third pin, and second chip is equipped with the 4th pin, the third pin
It is used to connect with the pole plate of the capacitor except the encapsulating structure with the 4th pin.
Optionally, first resonator and second resonator meet one or two in the following conditions: described
First resonator is different with the frequency of second resonator；The mechanical-electric coupling of first resonator and second resonator
Coefficient is different.
Optionally, on the domain of first chip, middle part is multiple first resonators in the arrangement of 1 row；In
On the domain of second chip, middle part is multiple second resonators in the arrangement of 1 row.
According to another aspect of the present invention, a kind of packaging method of filter is provided, the method is used to form this
In this method, it is humorous to form multiple first on the first surface of the first chip for the encapsulating structure of bulk accoustic wave filter in invention
Shake device and multiple first pins, wherein multiple first resonators are connected in series, and connect between adjacent first resonator
Connect first pin；Multiple second resonators, multiple second pins and ground pipe are formed on the first surface of the second chip
Foot, wherein each second resonator is all connected with inductor, and a ground pin is connected in series in each inductor；
The first surface of the first surface of first chip and second chip is oppositely arranged in parallel and is then encapsulated to be formed
Encapsulating structure is stated, and by first pin and second pin bonding to constitute filter.
According to the technique and scheme of the present invention, multiple resonators in filter are distributed in two chips, with existing skill
The quantity of resonator on compared to every piece chip of art is reduced, i.e. resonator area occupied on every piece of chip is reduced, to reach
To the purpose for reducing filter size, wherein resonator occupied area highest can be contracted to half in the prior art, therefore,
Using the filter of this encapsulating structure, facilitate the size for reducing filter.
Detailed description of the invention
For the purpose of illustration and not limitation, come now by preferred embodiment in accordance with the present invention, particularly with reference to attached drawing
The description present invention, in which:
The schematic diagram of series parallel resonance device is arranged on a chips in the prior art by Fig. 1；
The impedance plot of filter in the existing technology of Fig. 2；
Fig. 3 is the schematic diagram of the first chip of the invention；
Fig. 4 is the schematic diagram of the second chip of the invention；
Fig. 5 is the impedance plot of filter of the present invention；
Fig. 6 is filter electromechanical coupling factor variation comparison diagram of the present invention；
Fig. 7 is the schematic diagram that capacitor of the present invention is set within encapsulating structure；
Fig. 8 is the schematic diagram that capacitor of the present invention is set to except encapsulating structure；
Fig. 9 is the big coupled capacitor of filter of the present invention and small coupled capacitor performance comparison figure；
Figure 10 is the frequency roll-offed-suppression curve figure of filter of the present invention；
Figure 11 is the Insertion Loss comparison diagram of filter of the present invention；
Figure 12 is the flow diagram of the packaging method of filter of the present invention.
In figure:
1: the first chip；2: the second chips；3: capacitor；11: the first resonators；12: the first pins；13: third pin；
14: input pin；15: output pin；21: the second resonators；22: the second pins；23: ground pin；24: the four pins.
Specific embodiment
As shown in Fig. 3-11, the encapsulating structure of one of embodiment of the present invention bulk accoustic wave filter includes the first chip
1 and second chip 2, multiple first resonators 11 are set on the first chip 1, multiple series connection of first resonators 11 form series electrical
Road connects the first pin 12 on the route between two adjacent the first resonators 11；It is humorous to be arranged multiple second on second chip 2
Shake device 21, the equal series reactor of each second resonator 21, and one end of separate the inductor of each second resonator 21 is equipped with the
Two pins 22, inductor are equipped with ground pin 23 far from one end of the second resonator 21；First chip 1 and the superposition of the second chip 2
Encapsulating structure is formed, in the inside of encapsulating structure, the first pin 12 and the bonding of the second pin 22 make multiple first resonator, 11 Hes
Multiple second resonators 21 constitute filter, i.e., the first resonator 11 is the series resonator in filter, the second resonance at this time
Device 21 is the parallel resonator in filter.Wherein, the first resonator 11 and the second resonator 21 are thin film bulk acoustic wave resonator.
It include two chips in the encapsulating structure of bulk accoustic wave filter, in the prior art, setting is gone here and there simultaneously on a chips
Join resonator, another chips are for covering.The area that multiple resonators occupy is big, therefore, causes the area of filter larger；
And the quantity of resonator can not be reduced, and cause the size of filter that can not reduce.
And in the technical solution of the embodiment of the present invention, the partial resonance device in filter is arranged in an other chips
Upper (i.e. above-mentioned second chip 2), to reduce the number of resonators on every chips, makes the area occupied of resonator on every chips
It reduces, so as to reduce the size of chip, achievees the purpose that reduce filter volume.
As shown in Figure 1, five series resonators are arranged on a chips and four parallel connections are humorous in existing filter construction
Shake device, totally 9 resonators.Using the present embodiment technical solution, as shown in figure 3, five concatenated first are arranged on the first chip 1
Resonator 11, as shown in figure 4, four the second resonators 21 in parallel, the first chip 1 and the second chip 2 are arranged on the second chip 2
Area nearly 30% is reduced compared with the area of chip in the prior art.
When filter designs, according to the indexs such as different roll off requirement and passband matching properties, series parallel resonance device meeting
Select different electromechanical coupling factor and frequency；In high bandwidth design, high electromechanical coupling factor and biggish series-parallel frequency
Rate difference is then necessary.
In the prior art, series parallel resonance device is arranged on a chips, from the point of view of technique realization, in order to guarantee
Each layer of flatness on chip, needs the consistency of thickness of lower electrode and piezoelectric layer, and different thickness is only realized in top electrode
Shift frequency is carried out, therefore, series-parallel difference on the frequency is limited, as shown in Fig. 2, solid line is that the corresponding impedance of series resonator is bent in figure
Line, dotted line are the corresponding impedance curve of parallel resonator, and thus figure is as can be seen that series-parallel difference on the frequency is smaller, especially
The frequency of parallel resonator；Simultaneously because piezoelectric layer thickness is consistent and is same material, the electromechanical coupling of series parallel resonance device
Number is also identical.Therefore, the filter of existing structure has that difference on the frequency is small, electromechanical coupling factor is identical, service performance compared with
Difference.
In the present embodiment, the first resonator 11 and the second resonator 21 meet one or several: the first in the following conditions
Resonator 11 is different with the frequency of the second resonator 21；The electromechanical coupling factor of first resonator 11 and the second resonator 21 is not
Together.
When series resonator and parallel resonator are respectively set on two chips using in technical solution of the present invention
When structure, the thickness of lower electrode on different chips, piezoelectric layer and top electrode can be different, i.e., encapsulating structure meets following item
One in part or the thickness of the lower electrode of the several: the first resonator 11 and the thickness of the lower electrode of the second resonator 21 are different；First
The thickness of 21 piezoelectric layer of thickness and the second resonator of 11 piezoelectric layer of resonator is different；The thickness of first resonator, 11 top electrode and
The thickness of second resonator, 21 top electrode is different.Using this structure, may be implemented on the first chip 1 and the second chip 2 bigger
The difference on the frequency of range.As shown in figure 5, in figure there is a certain range of frequency in series resonator frequency and parallel resonator frequency
Difference.
Meanwhile first the material of piezoelectric layer on chip 1 and the second chip 2 can also be different, series parallel resonance device can be not
Same electromechanical coupling factor, resonator behavior can have more types, to achieve the purpose that boostfiltering device performance.Such as figure
Shown in 6, in figure, dotted line and solid line are frequency-degree of suppression curve in the prior art and embodiment of the present invention respectively, work as electromechanics
After the coefficient of coup increases variation freedom degree, it can be seen that whole Insertion Loss has a certain upgrade.
Therefore, it is respectively provided with the structure type of resonator using two chips, biggish difference on the frequency may be implemented, and different
Electromechanical coupling factor, provide more flexibilities for filter design, guarantee to realize better performance, such as matching and with outer
The performances such as inhibition.
Will use additional capacitor cooperation in filter, inductance carries out the adjusting with outer zero point (notch) over the ground, is protected with this
The frequency range demonstrate,proved in needs has higher inhibition.
It is generally realized using domain structure in existing filter, but the capacitance that domain structure is realized is limited, generally
Less than 0.1F, for the notch of fixed frequency, need to be made up with inductance over the ground in the lesser situation of capacitor, therefore inductance
Amount will increase.Inductance increase can widen Fs (resonator impedance is compared with low spot) and Fp (the resonator impedance height of resonator first
Point), therefore can deteriorate and roll-off, while inductance is realized by domain and substrate cabling, longer cabling can introduce bigger loss,
Therefore the Insertion Loss of entire filter also has a degree of deterioration.
In the technical solution of the present embodiment, as shown in fig. 7, filter further includes capacitor 3, capacitor 3 is set in encapsulating structure,
Capacitor includes the first electrode on the first chip 1, and the second electrode on the second chip 2, in encapsulating structure,
First electrode and the opposite formation capacitor 3 of second electrode.The capacitance of capacitor 3 can be 0.005pF to 2pF, according to first electrode
Relative area between second electrode and/or the capacitance apart from adjustment capacitor 3, when adjustment, adjust the first chip 1 and second
The relative position of chip 2 can change the size of capacitance in this manner, can form biggish capacitor, therefore, inductance over the ground
Can be small as far as possible, so as to improve roll-offing and the performances such as Insertion Loss.The inductance value of inductance is 0.05nH to 2nH over the ground, it is therefore preferable to
0.1nH to 1nH.
Another structure type also can be used in the arrangement of capacitor 3, as shown in figure 8, capacitor 3 is set to outside encapsulating structure, the
One chip 1 is equipped with third pin 13, and the second chip 2 is equipped with the 4th pin 24, third pin 13 and the 4th pin 24 and electricity
Hold 3 connections.Capacitor 3 is arranged except filter package structure in this structure, wherein capacitor 3 can the setting of discrete original part, can also
It is integrally disposed, it is preferable that the capacitor 3 except encapsulating structure is integrally disposed on the outer wall of the second chip 2, to reduce core
Piece volume.
As shown in figure 9, solid line corresponds to big coupled capacitor in figure, dotted line corresponds to small coupled capacitor, compare small coupled capacitor and
Big influence of the coupled capacitor to performance of filter, it can be seen that big coupled capacitor can be realized better Out-of-band rejection.Capacitance
Preferably 0.01pF to 1pF.
For dead-center position outside identical band, big coupled capacitor corresponds to smaller inductance over the ground, uses small inductance can be with
Improvement is roll-offed.The definition roll-offed is that corresponding difference on the frequency is smaller for identical inhibition roll-off it is better.As shown in Figure 10, the figure
The suppression curve on the right side of passband, solid line is after improving, dotted line be before performance.From this figure, it can be seen that for identical
Inhibition (such as -60dB), the corresponding frequency of solid line is lower, that is, can be roll-offed in lesser frequency to certain inhibition.
Reducing the inductance value of inductance using smaller inductance, the small corresponding Q value of inductance value is higher, therefore loss is smaller, so
Insertion Loss performance is better, and as shown in figure 11, solid line and dotted line are the performance after improving and before improving respectively in figure.
As the preferred embodiment of the present invention, as shown in Figure 3 and Figure 4,14 He of input pin is additionally provided on the first chip 1
Output pin 15 is separately connected the head end and tail end of series circuit, and on the domain of the first chip 1, middle part is into 1 row and arranges
Multiple first resonators 11, two sides are input pin 14, output pin 15 and the first pin 12；On the domain of the second chip 2,
Middle part is into multiple second resonators 21 of 1 row arrangement, and two sides are the second pin 22 and ground pin 23.In 1 He of the first chip
On the domain of second chip 2, to the position of each pin, there is no the restrictions of specific location, are capable of forming the series-parallel of filter
Resonator structure.
Using the encapsulating structure of the bulk accoustic wave filter in embodiment of the present invention, make on the first chip 1 and the second chip 2
Resonator layout it is more reasonable, avoid additionally increasing area, meanwhile, be easier to the operation such as be packaged, cut, working efficiency is more
It is high.
A kind of packaging method of filter is also provided in embodiment of the present invention, as shown in figure 12, comprising the following steps:
S1: multiple first resonators and multiple first pins are formed on the first surface of the first chip, wherein Duo Ge
One resonator is connected in series, and connects the first pin between the first adjacent resonator；
S2: multiple second resonators, multiple second pins and multiple ground pipes are formed on the first surface of the second chip
Foot, wherein each second resonator is all connected with inductor, and a ground pin is connected in series in each inductor；
S3: the first surface of the first surface of the first chip and the second chip is oppositely arranged in parallel and is then encapsulated to be formed
Encapsulating structure, and by the first pin and the bonding of the second pin to constitute filter.
It include the installation position of the first pin in the present embodiment, on the first chip；It include the second pin and connecing on second chip
The installation position of ground pin；After first resonator and the second resonator are provided with, the first pipe of setting in the installation position of the first pin
The second pin and ground pin is arranged in the installation position of the second pin and ground pin in foot, wherein when docking encapsulation, the first pipe
Foot and the positive para-linkage connection of the second pin.
First resonator (series resonator) and the second resonator (parallel resonator) are separately positioned on two chips, because
This, when packaged, therefore, to assure that the first pin and the bonding of the second pin can just make the first resonator and the second resonator form string
Parallel circuit.In the present embodiment, installation position is set in the designated position of the first chip and the second chip, is arranged first on installation position
After pin/second pin, constantly, the two energy face is arranged, and then can ensure that the accuracy of bonding for docking encapsulation.
Above-mentioned specific embodiment, does not constitute a limitation on the scope of protection of the present invention.Those skilled in the art should be bright
It is white, design requirement and other factors are depended on, various modifications, combination, sub-portfolio and substitution can occur.It is any
Made modifications, equivalent substitutions and improvements etc. within the spirit and principles in the present invention, should be included in the scope of the present invention
Within.
Claims (9)
1. a kind of encapsulating structure of bulk accoustic wave filter characterized by comprising
Multiple first resonators are arranged on first chip in first chip, and multiple first resonators connect to form series connection
Circuit connects the first pin on the route between first resonator of adjacent two；
Second chip, is arranged multiple second resonators on second chip, each equal series reactor of second resonator,
One end far from the inductor of each second resonator is equipped with the second pin, and the inductor is humorous far from described second
One end of vibration device is equipped with ground pin；
First chip and second chip are superimposed to form encapsulating structure, in the inside of the encapsulating structure, described first
Pin and second pin bonding make multiple first resonators and multiple second resonators constitute filter.
2. the encapsulating structure of bulk accoustic wave filter according to claim 1, which is characterized in that the encapsulating structure meet with
One or several in lower condition:
The thickness of electrode is different with the thickness of electrode under second resonator under first resonator；
The thickness of the first resonator piezoelectric layer is different with the thickness of the second resonator piezoelectric layer；
The thickness of the first resonator top electrode is different with the thickness of the second resonator top electrode.
3. the encapsulating structure of bulk accoustic wave filter according to claim 1, which is characterized in that the first resonator piezoelectricity
The material of layer is different with the material of the second resonator piezoelectric layer.
4. the encapsulating structure of bulk accoustic wave filter according to claim 1, which is characterized in that further include being set to described first
First electrode on chip, and the second electrode on second chip, the first electrode and the second electrode
Position is opposite to form capacitor.
5. the encapsulating structure of bulk accoustic wave filter according to claim 4, which is characterized in that the first electrode and described
Relative area and/or distance between second electrode are arranged to make capacitance 0.005pF to the 2pF of the capacitor.
6. the encapsulating structure of bulk accoustic wave filter according to claim 1, which is characterized in that first chip is equipped with the
Three-prong, second chip are equipped with the 4th pin, and the third pin and the 4th pin are used for and the encapsulating structure
Except capacitor pole plate connection.
7. the encapsulating structure of bulk accoustic wave filter according to claim 1, which is characterized in that first resonator and institute
It states the second resonator and meets one or two in the following conditions:
First resonator is different with the frequency of second resonator；
First resonator is different with the electromechanical coupling factor of second resonator.
8. the encapsulating structure of bulk accoustic wave filter according to claim 1, which is characterized in that in the version of first chip
On figure, middle part is multiple first resonators in the arrangement of 1 row；On the domain of second chip, middle part is arranged in 1 row
Multiple second resonators of column.
9. a kind of manufacturing method of filter, which is characterized in that the method is used to form any one of claims 1 to 8 institute
The encapsulating structure for the bulk accoustic wave filter stated, this method comprises:
Multiple first resonators and multiple first pins are formed on the first surface of the first chip, wherein multiple described first
Resonator is connected in series, and connects first pin between adjacent first resonator；
Multiple second resonators, multiple second pins and multiple ground pins are formed on the first surface of the second chip, wherein
Each second resonator is all connected with inductor, and a ground pin is connected in series in each inductor；
The first surface of the first surface of first chip and second chip is oppositely arranged in parallel and is then encapsulated with shape
At the encapsulating structure, and by first pin and second pin bonding to constitute filter.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910734509.1A CN110492864B (en) | 2019-08-09 | 2019-08-09 | Packaging structure of bulk acoustic wave filter and manufacturing method of filter |
| PCT/CN2020/107341 WO2021027673A1 (en) | 2019-08-09 | 2020-08-06 | Packaging structure of bulk acoustic wave filter and method for fabricating filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910734509.1A CN110492864B (en) | 2019-08-09 | 2019-08-09 | Packaging structure of bulk acoustic wave filter and manufacturing method of filter |
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| CN110492864A true CN110492864A (en) | 2019-11-22 |
| CN110492864B CN110492864B (en) | 2023-04-07 |
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| CN115458511A (en) * | 2022-09-07 | 2022-12-09 | 安徽安努奇科技有限公司 | Filter circuit packaging structure and manufacturing method thereof |
| WO2023207474A1 (en) * | 2022-04-29 | 2023-11-02 | 锐石创芯(重庆)科技有限公司 | Filter, multiplexer, radio frequency front-end module, and preparation method for filter |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113644895B (en) * | 2021-06-30 | 2024-02-23 | 中国电子科技集团公司第十三研究所 | Thin film bulk acoustic resonator filter and filter assembly |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060267708A1 (en) * | 2005-05-25 | 2006-11-30 | Fujitsu Media Devices Limited | Acoustic wave filter and acoustic wave duplexer |
| US20150155850A1 (en) * | 2012-08-30 | 2015-06-04 | Murata Manufacturing Co., Ltd. | Elastic wave filter device and duplexer |
| CN106817917A (en) * | 2014-08-28 | 2017-06-09 | 追踪有限公司 | The method of filter chip and manufacture filter chip |
| CN108512520A (en) * | 2018-02-27 | 2018-09-07 | 贵州中科汉天下微电子有限公司 | The monolithic integrated structure and its manufacturing method of bulk acoustic wave resonator and capacitor, filter, duplexer and radio-frequency communication module |
| CN109643984A (en) * | 2016-06-21 | 2019-04-16 | 诺思(天津)微系统有限责任公司 | A kind of trapezium structure broadband piezoelectric filter |
| CN109787581A (en) * | 2018-11-28 | 2019-05-21 | 天津大学 | The filter based on bulk acoustic wave resonator with band logical and high pass dual function |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5038740B2 (en) * | 2007-02-23 | 2012-10-03 | パナソニック株式会社 | Band pass filter and manufacturing method thereof |
| CN101651244B (en) * | 2008-08-15 | 2012-11-28 | 财团法人工业技术研究院 | Bandpass filter circuit, multi-layer structure and method for realizing same |
| CN102111116A (en) * | 2010-11-24 | 2011-06-29 | 张�浩 | Integrated wafer level package |
| CN106031076B (en) * | 2014-02-19 | 2020-03-06 | 南加利福尼亚大学 | Filter and duplexer based on miniature acoustic resonator |
| CN110492864B (en) * | 2019-08-09 | 2023-04-07 | 天津大学 | Packaging structure of bulk acoustic wave filter and manufacturing method of filter |
-
2019
- 2019-08-09 CN CN201910734509.1A patent/CN110492864B/en active Active
-
2020
- 2020-08-06 WO PCT/CN2020/107341 patent/WO2021027673A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060267708A1 (en) * | 2005-05-25 | 2006-11-30 | Fujitsu Media Devices Limited | Acoustic wave filter and acoustic wave duplexer |
| US20150155850A1 (en) * | 2012-08-30 | 2015-06-04 | Murata Manufacturing Co., Ltd. | Elastic wave filter device and duplexer |
| CN106817917A (en) * | 2014-08-28 | 2017-06-09 | 追踪有限公司 | The method of filter chip and manufacture filter chip |
| CN109643984A (en) * | 2016-06-21 | 2019-04-16 | 诺思(天津)微系统有限责任公司 | A kind of trapezium structure broadband piezoelectric filter |
| CN108512520A (en) * | 2018-02-27 | 2018-09-07 | 贵州中科汉天下微电子有限公司 | The monolithic integrated structure and its manufacturing method of bulk acoustic wave resonator and capacitor, filter, duplexer and radio-frequency communication module |
| CN109787581A (en) * | 2018-11-28 | 2019-05-21 | 天津大学 | The filter based on bulk acoustic wave resonator with band logical and high pass dual function |
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| CN111130481B (en) * | 2019-12-31 | 2021-06-22 | 诺思(天津)微系统有限责任公司 | Semiconductor structure with stacked units, manufacturing method and electronic equipment |
| WO2021136282A1 (en) * | 2020-01-03 | 2021-07-08 | 诺思(天津)微系统有限责任公司 | Filter, signal processing device, and method for manufacturing the filter |
| CN111600565A (en) * | 2020-01-03 | 2020-08-28 | 诺思(天津)微系统有限责任公司 | Filter circuit, signal processing device and method for manufacturing filter circuit |
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