CN101651244B - Bandpass filter circuit, multi-layer structure and method for realizing same - Google Patents
Bandpass filter circuit, multi-layer structure and method for realizing same Download PDFInfo
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- CN101651244B CN101651244B CN2008101470850A CN200810147085A CN101651244B CN 101651244 B CN101651244 B CN 101651244B CN 2008101470850 A CN2008101470850 A CN 2008101470850A CN 200810147085 A CN200810147085 A CN 200810147085A CN 101651244 B CN101651244 B CN 101651244B
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- pass filter
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Abstract
The invention discloses a bandpass filter circuit, a multi-layer structure and a method for realizing the same. The bandpass filter circuit comprises a plurality of resonators, a feedback capacitance device and a grounding inductance device, wherein in the resonators, first end points are connected with first nodes, and second end points are connected with second nodes; the feedback capacitance device is arranged in a feedback circuit between the first nodes and the second nodes; and one end point of the grounding inductance device is connected with the second nodes, and the other end point is grounded. In the technical scheme, the resonator comprises a capacitance device and an inductance device.
Description
Technical field
The invention relates to a kind of band pass filter circuit and sandwich construction, can increase its rejection power (rejection), and about its relevant method that increases band pass filter rejection power.
Background technology
Know just as everybody; The RF passive element is in having played the part of quite arduous role among the communication system now; No matter be the basis inductance, electric capacity, resistor also or devices such as antenna, balance-to-nonbalance converter, all be indispensable in the wireless telecommunication system.Wherein, a radio frequency band filter device of most critical in the system often again.In addition and to the outer interference source signal of passband its major function of radio frequency band filter provides suitable attenuation (attenuation) in frequency spectrum, selecting the signal of required frequency range.Among system, the position of filter is usually after antenna, and before low noise amplifier.So a good radio frequency band filter must possess low launch loss (insertion loss) in passband is arranged, and outside passband, then need possess enough characteristics such as attenuation.Over past ten years, because hand-held action device and wireless network is flourish, also make that the commercialization development of radio frequency band filter is rapid, the height of its whole industrial economy value is well imagined.Hereat under the development trend light, thin, short, little in response to electronic product, the radio frequency band filter with good electrical characteristic and appropriate size has its market value and demand in fact.
Radio frequency band filter is being played the part of very important role for a long time always in wireless telecommunication system.Because noise and interference source are very serious in the wireless transfer channel, system need be dependent on the band selecting filter (band-select filter) that is positioned at front position and suppress to interference signals such as mirror image (image) signal and harmonic wave (harmonic) signals.The outer rejection power of passband that hereat how to promote filter is a crucial technology in the Design of Filter.
US 7,109, and 829 patents disclose three rank band pass filter frameworks, and it is mainly the multiple mutual coupling that utilizes between resonator and reaches and make passband and transmit the purpose at zero point outward.The frequency response of the filter at the low skirt with a transmission zero at high skirt with two transmission zeros.The layout of this framework is simplified, and the control of the mechanism of the mutual between the harmonic shock device is difficult for, so the also difficult control in the position of transmission zero.
Summary of the invention
In the creation and research and development direction of radio frequency band filter, being spread out by the discussion that responds in the passband gradually extends the research of the outer response of passband at present.Its reason be when system in the face of all noises in the wireless transfer channel and when disturbing, the passband of radio frequency band filter is the rejection ability more fractal key that just seems outward.So the present invention proposes a kind of radio frequency band filter framework of innovation, its characteristic mainly is to promote the outer rejection power of passband of radio frequency band filter.Except, with regard to the framework of this filter, also possessing has the multilager base plate of being suitable for technology like multilayer board, multilayer ceramic substrate ... or the like the characteristic that realizes among the technology.
The present invention discloses a kind of band pass filter circuit, and it comprises a plurality of resonators, a feedback capacity device and a ground connection inductance component.First end points of each said resonator connects a first node, and its second end points connects a Section Point.Said feedback capacity device is located in the feedback circuit of said first node to Section Point.One end points of said ground connection inductance component connects said Section Point, another end points ground connection.
One implements in the example, and said resonator comprises a capacitor element and an inductance component.
Above-mentioned band pass filter circuit can be realized by multilayer circuit board, from top to bottom comprises a first circuit board layer, a second circuit flaggy, a tertiary circuit flaggy, one the 4th board layer and one the 5th board layer substantially.The second circuit flaggy is provided with the electric pole plate part of the capacitor element of said a plurality of resonators, and the tertiary circuit flaggy is provided with the lower electrode plate part of the capacitor element of said a plurality of resonators, and the 5th board layer is provided with the inductance component part in said a plurality of resonator.In addition, a ground plane is located at the lower surface of said the 5th board layer.
The rejection power of above-mentioned increase band pass filter can roughly comprise: form a plurality of resonators between the binary signal connectivity port, and said a plurality of resonator is that parallel connection is provided with, and an end is connected in first node, the other end is connected in Section Point.Then form a feedback circuit between first node and Section Point, and said feedback circuit is formed by a capacitor element.Form an inductance component afterwards and be connected in said Section Point and ground connection.
Description of drawings
Fig. 1 shows the circuit box sketch map of band pass filter of the present invention;
Fig. 2 shows that the present invention one implements the circuit diagram of the band pass filter of example;
Fig. 3, Fig. 4 A, Fig. 4 B, Fig. 4 C, Fig. 4 D, Fig. 4 E, Fig. 4 F, Fig. 5 show that the present invention one implements the band pass filter sandwich construction sketch map of example; And
Fig. 6 shows that the present invention one implements the effect sketch map of the band pass filter of example.
Drawing reference numeral
10 band pass filters, 11 first resonators
12 second resonators 13 the 3rd resonator
14 coupled apparatuses, 15 coupled apparatuses
16 capacitor elements, 17 inductance components
21,23,25 capacitor elements, 22,24,26 inductance components
31～35 dielectric layers, 36 metal levels
37 ground planes, 61～66 fairleads
402a～402f conductive layer 403a～403f conductive layer
404a～404f conductive layer 405a～405d conductive layer
Embodiment
Consider at the overall permanence of wireless telecommunication system, take place for avoiding the situations such as noise jamming or harmonic distortion in the transmission channel, need usually one have high rejection power the radio frequency band filter device.
Fig. 1 shows the circuit box sketch map of band pass filter of the present invention.One band pass filter 10 mainly comprises one first resonator 11, one second resonator 12, one the 3rd resonator 13, one first coupled apparatus 14, one second coupled apparatus 15, a feedback capacity device 16 and a ground connection inductance component 17.Said first coupled apparatus 14 is located between first resonator 11 and second resonator 12, and said second coupled apparatus 15 is located between second resonator 12 and the 3rd resonator 13.Said first, second and third resonator 11,12 and an end of 13 are to be connected in a first node a, and the other end is connected in a Section Point b.Feedback capacity device 16 is located between the feedback circuit of node a to b.Node b connects said ground connection inductance component 17 in addition, and the other end ground connection of ground connection inductance component 17.First resonator 11 and second resonator 13 connect two signal connection end mouth A and B of said band pass filter 10 respectively.By resonator 11,12 and 13 and the setting of feedback circuit, can improve the high rejection power of band pass filter.
First, second and third resonator 11,12 and 13 resonance frequency can be identical or different.First and second coupled apparatus 14 and 15 can use metal-insulator-metal (MIM) electric capacity pattern, vertically interdigital (VIC-Vertical Interdigital Capacitor) electric capacity pattern, surface adhering device (SMD) pattern or other equivalent capacity patterns realize, and its capacitance can be identical or different.Except, the battery lead plate of capacitor can be by being made up of a plurality of battery lead plates.
Among one embodiment, first resonator 11 comprises a capacitor element 21 and an inductance component 22; Second resonator 12 comprises a capacitor element 23 and an inductance component 24; The 3rd resonator 13 comprises a capacitor element 25 and an inductance component 26. Capacitor element 21,23 and 25 is connected in node a, and inductance component 22,24 and 26 is connected in node b.First coupled apparatus 14 is the node d that are connected in 24 of node c and capacitor element 23 and the inductance components of 22 of capacitor element 21 and inductance components.Node c is connected in signal connection end mouth A.Second coupled apparatus 15 is the node e that are connected in 26 of node d and capacitor element 25 and the inductance components of 24 of capacitor element 23 and inductance components.Node e is connected in signal connection end mouth B.
With reference to Fig. 2, according to one embodiment of the invention, first resonator 11 is to be made up of capacitor C 1 and 1 equivalence of inductance L; Second resonator 12 is to be made up of capacitor C 2 and 2 of inductance L; The 3rd resonator 13 is to be made up of capacitor C 3 and 3 of inductance L. Coupled apparatus 14 and 15 between two resonators is to be made up of coupling capacitance C12 and C23 equivalence respectively.Feedback capacity device 16 is to be made up of capacitor C 0, and ground connection inductance component 17 is to be made up of inductance L 0.
The practical application aspect of foregoing circuit, the present invention proposes the filter framework of a new kenel, is applicable to multilager base plate technology.Bury filter architecture design notion in this substrate, main innovation framework by traditional three rank comb type Design of Bandpass conception derivings.
The present invention utilizes typical 2/2/2 a Layer increasing method multilayer board technology, implements example as the multi-layer framework of this high rejection band pass filter.Only this innovation framework can different processes and other different layout type implement, also all should include the rights protection scope of this case in.
Shown in the frame substrate composition 3 of this enforcement example.This technology is six laminate frameworks; Comprising five layer circuit board layers 31～35; Comprise the BT substrate that is used as core layer (core layer) respectively; Two-layer macromolecule mixing high-dielectric coefficient substrate, and outermost two-layer Rogers 4403 low dielectric loss substrates from top to bottom are respectively first circuit board layer 34, second circuit flaggy 32, tertiary circuit flaggy 31, the 4th board layer 33 and the 5th board layer 35.In addition, each board layer 31～35 or be provided with metal level 36, as the usefulness of circuit conduction, ground plane 37 is then as system ground.
Fig. 4 A to Fig. 4 E shows the circuit layout sketch map that corresponds to first circuit board layer 34, second circuit flaggy 32, tertiary circuit flaggy 31, the 4th board layer 33 and the 5th board layer 35 respectively.Fig. 4 F then is the ground plane 37 of system ground.Fig. 5 is the counter structure end view that Fig. 4 A to 4F forms.The signal input of filter, output port are conductive layer 403a and the 403b that is positioned at Fig. 4 C.The C1 of band pass filter equivalent electric circuit, C2, C3 then are made up of the conductive layer 402c among Fig. 4 B and the 4C and three groups of parallel plate capacitors such as 403c, 402d and 403d, 402e and 403e respectively among Fig. 2.L1 among Fig. 2, L2, L3 are then by the conductive layer 405a on the substrate that is positioned at Fig. 4 E 405,405c and the equivalence of 405b institute. Conductive layer 405a, 405b, 405c are the effects that reaches inductor with interior mode of burying transmission line in this enforcement example, also utilize the mode of cranky transmission line that circuit size is dwindled in addition.Aforementioned first resonator of carrying 11 promptly comprises conductive layer 402c, 403c and 405a, and wherein 402c, 403c use fairlead 61 and 62 to stride the two ends that layer is connected in inductance 405a respectively.Way with first resonator 11; Second and third resonator 12 and 13 comprises conductive layer 402d, 403d and 405c respectively; And 402e, 403e and 405b, wherein 402d, 403d and 402e, 403e also use fairlead 61 and 62 to stride the two ends that layer is connected in inductance 405c and 405b respectively.Coupling capacitance C12 between first resonator 11 and second resonator 12, and the coupling capacitance C23 between second resonator 12 and the 3rd resonator 13, the parallel plate capacitor that then is made up of conductive layer 402a, 403c and 402b, 403e is respectively formed.In addition, conductive layer 402a and 402b also see through fairlead 61 and are connected to 403d jointly.By above-mentioned way, utilize 402a, 402b, 403c, 403d, 403e can realize coupling capacitance C12 and C23 between the resonator among Fig. 2.Wherein the pattern of capacitor is not limited to MIM electric capacity pattern, can be formed in parallel by a plurality of battery lead plates.
Parallelly connected feedback capacity C0 among Fig. 2 can realize by MIM electric capacity pattern; Utilizing conductive layer 402c, 402d, common 402f and 403f, 403g, 404d, 404e, 404f and the 405d that connects of 402e to constitute vertical multilayer MIM electric capacity, wherein is to be connected by fairlead 61,64 between 402f, 404d; Between 403f and 404f, 405d is to be connected by fairlead 63,66; This multilayer MIM electric capacity has used two-layer high-k baseplate material altogether, and promptly 32 and 33 is two-layer, gives full play to the characteristics of this technology.Further speech; Said feedback capacity comprises four layers of battery lead plate; Said second circuit flaggy 32 is provided with the first battery lead plate 402f of said feedback capacity; Tertiary circuit flaggy 31 is provided with the second battery lead plate 403f, the 403g of said feedback capacity, and the 4th board layer 33 is provided with third electrode plate 404d, 404e, the 404f of said feedback capacity, and the 5th board layer 35 is provided with the 4th battery lead plate 405d of said feedback capacity.A way can provide enough big capacitance to realize the high rejection power band pass filter framework among the present invention by this.
Ground plane coupling inductance L0 conductive layer 405d connection capable of using a plurality of (at least more than one) fairlead 65 to ground plane 37 is realized among Fig. 2.By the effect of a plurality of fairlead shunt inductance L0, the number of control fairlead number also can reach the sense value size of control L0.
The circuit layout of the above-mentioned 402a of comprising～402f, 403a～403g, 404a～404f, 405a～405d is promptly by forming corresponding to 36 of the metal levels among Fig. 2.
Above-mentioned capacitor element also can or all realize with surface adhering device (SMD) electric capacity by vertical interdigital formula electric capacity (VerticalInterdigital Capacitor) pattern or part except that above-mentioned MIM form.Inductance component can use discrete type circuit design notion band line, microstrip line, in bury microstrip line or other transmission lines are realized; Structurally can dwindle its size, also can partly or all realize with the SMD inductance component for spiral, the formula of wriggling or other any meander configurations.
But the present invention except that Ying Yu to art of printed circuit boards, also can be applicable to ceramic substrate field or IC substrate field.
Band pass filter of the present invention can also be realized by different process, like multilayer ceramic substrate (LTCC &HTCC), multilayer IC substrate, thin-film technique or other similar technology.Inductance, capacitor element in the said band pass filter can be sandwich construction, and can be all or part of with lumped device (lump element) or discrete devices (distributed element) equivalence realization.
Technology contents of the present invention and technical characterstic disclose as above, yet the personage who is familiar with this technology still maybe be based on teaching of the present invention and announcement and done all replacement and modifications that does not deviate from spirit of the present invention.Therefore, protection scope of the present invention should be not limited to embodiment announcement person, and should comprise various do not deviate from replacement of the present invention and modifications, and is contained by following claim scope.
Claims (25)
1. a band pass filter circuit is characterized in that, said band pass filter circuit comprises:
A plurality of resonators; First end points of each said resonator connects a first node; And its second end points connects a Section Point; And end points is between said first end points and said second end points in the middle of one, and wherein the said middle end points of a resonator is electrically connected to the said middle end points of a contiguous resonator;
One feedback device is located in the feedback circuit of said first node to Section Point; And
One ground connection device, the one of which end points connects said Section Point, another end points ground connection.
2. band pass filter circuit as claimed in claim 1 is characterized in that, said feedback device is an electric capacity, and said ground connection device is an inductance.
3. band pass filter circuit as claimed in claim 1 is characterized in that, each said resonator comprises a capacitor element and an inductance component.
4. band pass filter circuit as claimed in claim 3 is characterized in that, said capacitor element and inductance component are parallel connections.
5. band pass filter circuit as claimed in claim 3 is characterized in that, said feedback device is to connect said first node, and said inductance component connects said Section Point.
6. band pass filter circuit as claimed in claim 1 is characterized in that, two resonators in said a plurality of resonators are to connect signal input port and signal output port respectively.
7. band pass filter circuit as claimed in claim 1 is characterized in that, between each adjacent two resonator is to utilize capacitive coupling to realize being electrically connected.
8. band pass filter circuit as claimed in claim 7 is characterized in that, said band pass filter circuit also comprises at least one coupling capacitance device, is connected between each adjacent two resonator.
9. band pass filter circuit as claimed in claim 1 is characterized in that, said band pass filter circuit produces a plurality of transmission zeros outside passband.
10. a band pass filter sandwich construction is characterized in that, said band pass filter comprises a plurality of resonators, a feedback capacity device and a ground connection inductance component, and said band pass filter sandwich construction from top to bottom comprises in regular turn:
One first circuit board layer;
One second circuit flaggy is provided with the electric pole plate part of the capacitor element of said a plurality of resonators and the first battery lead plate part of said feedback capacity device;
One tertiary circuit flaggy, be provided with said a plurality of resonators capacitor element lower electrode plate partly, and the second battery lead plate part of said feedback capacity device;
One the 4th board layer is provided with the third electrode plate portion of said feedback capacity device;
One the 5th board layer is provided with the inductance component part in said a plurality of resonator, and the 4th battery lead plate part of said feedback capacity device; And
One ground plane is located at the lower surface of said the 5th board layer.
11. band pass filter sandwich construction as claimed in claim 10 is characterized in that, the lower electrode plate of the capacitor element of said a plurality of resonators is to utilize fairlead to be connected to said inductance component partly.
12. band pass filter sandwich construction as claimed in claim 10; It is characterized in that; Said feedback capacity comprises four layers of battery lead plate, and said four layers of battery lead plate are by the first included battery lead plate of second circuit flaggy, second battery lead plate that the tertiary circuit flaggy is included; The third electrode plate that the 4th board layer is included, the 4th included battery lead plate of the 5th board layer is formed jointly.
13. band pass filter sandwich construction as claimed in claim 12 is characterized in that, said first battery lead plate and third electrode plate and second battery lead plate and the 4th battery lead plate form with fairlead respectively and are electrically connected.
14. band pass filter sandwich construction as claimed in claim 12 is characterized in that, said the 4th battery lead plate is connected to said ground plane with fairlead, to form said ground connection inductance component.
15. band pass filter sandwich construction as claimed in claim 10 is characterized in that, said band pass filter circuit comprises at least one coupling capacitance device in addition, be connected between each adjacent two resonator, and
Said second circuit flaggy comprises the electric pole plate of said coupling capacitance device in addition; And
Said tertiary circuit flaggy comprises the lower electrode plate of said coupling capacitance device in addition.
16. band pass filter sandwich construction as claimed in claim 15 is characterized in that, the lower electrode plate of said coupling capacitance device utilizes fairlead to be connected to said inductance component part.
17. band pass filter sandwich construction as claimed in claim 10 is characterized in that, said the 5th board layer comprises the fairlead that connects said inductance component part and said ground plane.
18. band pass filter sandwich construction as claimed in claim 10 is characterized in that, metal-insulating layer-metal capacitor pattern, vertical interdigital capacitor pattern or surface adhering device capacitor pattern are adopted in capacitor element.
19. band pass filter sandwich construction as claimed in claim 10 is characterized in that, said inductance component uses the band line.
20. band pass filter sandwich construction as claimed in claim 10 is characterized in that, said inductance component uses microstrip line.
21. band pass filter sandwich construction as claimed in claim 10 is characterized in that, said inductance component buries microstrip line in using.
22. a band pass filter increases the method for rejection power, it is characterized in that, the method that said band pass filter increases rejection power comprises the following steps:
Form a plurality of resonators between one first port and one second port, and said a plurality of resonator is that parallel connection is provided with, and an end is connected in first node, the other end is connected in Section Point;
Wherein one first resonator comprises the middle end points between said first node and said Section Point, and the said middle end points of said first resonator is connected to said first port; Wherein a last resonator comprises the middle end points between said first node and said Section Point, and the said middle end points of said last resonator is connected to said second port;
Form a feedback circuit between first node and Section Point, and form a capacitor element in said feedback circuit; And
Form an inductance component and be connected in said Section Point and ground connection.
23. band pass filter as claimed in claim 22 increases the method for rejection power, it is characterized in that, between said a plurality of resonators is to adopt capacitive coupling to realize being electrically connected.
24. band pass filter as claimed in claim 22 increases the method for rejection power, it is characterized in that, said band pass filter is to realize with multilayer ceramic substrate, multilayer IC substrate or thin-film technique.
25. band pass filter as claimed in claim 22 increases the method for rejection power, it is characterized in that, inductance in the said band pass filter and capacitor element are all or part of with lumped device or discrete devices equivalence realization.
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| CN2008101470850A CN101651244B (en) | 2008-08-15 | 2008-08-15 | Bandpass filter circuit, multi-layer structure and method for realizing same |
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| CN101651244B true CN101651244B (en) | 2012-11-28 |
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| CN104702235B (en) * | 2010-10-25 | 2018-09-11 | 乾坤科技股份有限公司 | Filter and its layout structure |
| KR101878764B1 (en) * | 2013-03-27 | 2018-07-16 | 가부시키가이샤 무라타 세이사쿠쇼 | Insulating ceramic paste, ceramic electronic component and method for producing same |
| CN103795365B (en) * | 2014-02-17 | 2016-06-29 | 东南大学 | Micromechanics clamped beam type four state reconfigurable microwave band filter and preparation method |
| CN111342793B (en) * | 2018-12-18 | 2023-09-26 | 天津大学 | Band-pass filter, method for improving suppression level thereof, duplexer and electronic device |
| CN110492864B (en) * | 2019-08-09 | 2023-04-07 | 天津大学 | Packaging structure of bulk acoustic wave filter and manufacturing method of filter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6590473B1 (en) * | 1999-10-15 | 2003-07-08 | Samsung Electronics Co., Ltd. | Thin-film bandpass filter and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6590473B1 (en) * | 1999-10-15 | 2003-07-08 | Samsung Electronics Co., Ltd. | Thin-film bandpass filter and manufacturing method thereof |
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