CN110492864B - Packaging structure of bulk acoustic wave filter and manufacturing method of filter - Google Patents
Packaging structure of bulk acoustic wave filter and manufacturing method of filter Download PDFInfo
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000003990 capacitor Substances 0.000 claims description 30
- 230000008878 coupling Effects 0.000 claims description 18
- 238000010168 coupling process Methods 0.000 claims description 18
- 238000005859 coupling reaction Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 210000001503 joint Anatomy 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
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Abstract
The invention relates to the technical field of filters, in particular to a packaging structure and a packaging method of a bulk acoustic wave filter, wherein the packaging structure comprises a first chip, a plurality of first resonators are arranged on the first chip and are connected in series to form a series circuit, and a first pin is connected on a line between two adjacent first resonators; the second chip is provided with a plurality of second resonators, each second resonator is connected with an inductor in series, one end of each second resonator, which is far away from the inductor, is provided with a second pin, and one end of the inductor, which is far away from the second resonators, is provided with a grounding pin; the first chip and the second chip are superposed to form a packaging structure, and the first pins and the second pins are bonded in the packaging structure, so that the plurality of first resonators and the plurality of second resonators form a filter. According to the technical scheme, the occupied area of the resonator can be reduced by half at most, and compared with the existing filter, the size of the filter adopting the packaging structure can be reduced by 30% at most.
Description
Technical Field
The present invention relates to the field of filter technology, and in particular, to a package structure of a bulk acoustic wave filter and a method for manufacturing the filter.
Background
With the trend toward miniaturization and high performance of communication devices, higher demands are being placed on the radio frequency front end. In the rf communication front end, the filter and the duplexer and the multiplexer occupy a large size, and thus it is urgent to reduce the size of the filter. The existing filter package is limited by the chip size and cannot be further reduced, so that reducing the chip size of the filter is the most fundamental solution for reducing the package.
In a conventional filter, as shown in fig. 1, series resonators and parallel resonators are generally fabricated on one chip, a frequency is changed by applying a mass load to the parallel resonators, and a frequency difference between the series resonators and the parallel resonators is utilized to design the filter.
Disclosure of Invention
Accordingly, the present invention is directed to a package structure of a bulk acoustic wave filter and a method for manufacturing the same, which are helpful to reduce the size of the filter.
To achieve the above object, according to one aspect of the present invention, there is provided a package structure of a bulk acoustic wave filter.
The bulk acoustic wave filter of the present invention includes: the circuit comprises a first chip, a second chip and a third chip, wherein the first chip is provided with a plurality of first resonators which are connected in series to form a series circuit, and a first pin is connected to a line between two adjacent first resonators; the second chip is provided with a plurality of second resonators, each second resonator is connected with an inductor in series, one end, far away from the inductor, of each second resonator is provided with a second pin, and one end, far away from the second resonators, of the inductor is provided with a grounding pin; the first chip and the second chip are superposed to form a packaging structure, and the first pin and the second pin are bonded in the packaging structure, so that the first resonators and the second resonators form a filter.
Optionally, the package structure satisfies one or several of the following conditions: the thickness of the first resonator lower electrode is different from that of the second resonator lower electrode; a thickness of the first resonator piezoelectric layer and a thickness of the second resonator piezoelectric layer are different; the thickness of the first resonator upper electrode and the thickness of the second resonator upper electrode are different.
Optionally, the material of the first resonator piezoelectric layer and the material of the second resonator piezoelectric layer are different.
Optionally, the chip further comprises a first electrode disposed on the first chip, and a second electrode disposed on the second chip, and the first electrode and the second electrode are opposite to each other in position to form a capacitor.
Optionally, the relative area and/or distance between the first and second electrodes is set such that the capacitance value of the capacitor is 0.005pF to 2pF.
Optionally, the first chip is provided with a third pin, the second chip is provided with a fourth pin, and the third pin and the fourth pin are used for being connected with a polar plate of a capacitor outside the packaging structure.
Optionally, the first resonator and the second resonator satisfy one or both of the following conditions: the frequencies of the first resonator and the second resonator are different; the electromechanical coupling coefficients of the first resonator and the second resonator are different.
Optionally, on the layout of the first chip, the middle part is provided with a plurality of first resonators arranged in 1 row; and on the layout of the second chip, the middle part is provided with a plurality of second resonators arranged in 1 row.
According to another aspect of the present invention, there is provided a method for packaging a filter, the method being used for forming a package structure of a bulk acoustic wave filter in the present invention, the method comprising forming a plurality of first resonators and a plurality of first pins on a first surface of a first chip, wherein the plurality of first resonators are connected in series, and the first pins are connected between adjacent first resonators; forming a plurality of second resonators, a plurality of second pins and a ground pin on the first surface of the second chip, wherein each second resonator is connected with an inductor, and each inductor is connected with one ground pin in series; and arranging the first surface of the first chip and the first surface of the second chip in parallel and oppositely, packaging to form the packaging structure, and bonding the first pin and the second pin to form the filter.
According to the technical scheme of the invention, the plurality of resonators in the filter are distributed on the two chips, compared with the prior art, the number of resonators on each chip is reduced, namely the occupied area of the resonators on each chip is reduced, so that the purpose of reducing the size of the filter is achieved, wherein the occupied area of the resonators can be reduced to half of that of the prior art, and therefore, the filter adopting the packaging structure is beneficial to reducing the size of the filter.
Drawings
For purposes of illustration and not limitation, the present invention will now be described in accordance with its preferred embodiments, particularly with reference to the accompanying drawings, in which:
FIG. 1 is a diagram of a series-parallel resonator disposed on a chip in the prior art;
FIG. 2 is a graph of the impedance of a prior art filter;
FIG. 3 is a schematic diagram of a first chip of the present invention;
FIG. 4 is a schematic diagram of a second chip of the present invention;
FIG. 5 is a graph of the impedance of the filter of the present invention;
FIG. 6 is a graph comparing the electromechanical coupling coefficient changes of the filter of the present invention;
FIG. 7 is a schematic diagram of a capacitor disposed in a package structure according to the present invention;
FIG. 8 is a schematic diagram of a capacitor outside a package structure according to the present invention;
FIG. 9 is a graph comparing the performance of the filter of the present invention with large and small coupling capacitors;
FIG. 10 is a frequency versus rejection plot of the roll-off of the filter of the present invention;
FIG. 11 is a graph comparing the insertion loss of the filter of the present invention;
fig. 12 is a flow chart diagram of the method of packaging the filter of the present invention.
In the figure:
1: a first chip; 2: a second chip; 3: a capacitor; 11: a first resonator; 12: a first pin; 13: a third pin; 14: an input pin; 15: an output pin; 21: a second resonator; 22: a second pin; 23: a ground pin; 24: a fourth pin.
Detailed Description
As shown in fig. 3 to 11, a package structure of a bulk acoustic wave filter according to an embodiment of the present invention includes a first chip 1 and a second chip 2, where a plurality of first resonators 11 are disposed on the first chip 1, the plurality of first resonators 11 are connected in series to form a series circuit, and a first pin 12 is connected to a line between two adjacent first resonators 11; a plurality of second resonators 21 are arranged on the second chip 2, each second resonator 21 is connected with an inductor in series, one end of each second resonator 21 far away from the inductor is provided with a second pin 22, and one end of the inductor far away from the second resonators 21 is provided with a grounding pin 23; the first chip 1 and the second chip 2 are superposed to form a packaging structure, and the first pins 12 and the second pins 22 are bonded in the packaging structure, so that the plurality of first resonators 11 and the plurality of second resonators 21 form a filter, namely, the first resonators 11 are series resonators in the filter, and the second resonators 21 are parallel resonators in the filter. The first resonator 11 and the second resonator 21 are film bulk acoustic resonators.
In the prior art, a series-parallel resonator is arranged on one chip, and the other chip is used for sealing a cover. The area occupied by the plurality of resonators is large, thus resulting in a large area of the filter; and the number of resonators cannot be reduced, resulting in that the size of the filter cannot be reduced.
In the technical solution of the embodiment of the present invention, a part of resonators in the filter is disposed on another chip (i.e., the second chip 2) to reduce the number of resonators on each chip, so that the occupied area of the resonators on each chip is reduced, thereby reducing the size of the chip and achieving the purpose of reducing the size of the filter.
As shown in fig. 1, in the conventional filter structure, five series resonators and four parallel resonators are provided on one chip, and 9 resonators are provided. With the technical solution of the present embodiment, as shown in fig. 3, five first resonators 11 connected in series are disposed on the first chip 1, and as shown in fig. 4, four second resonators 21 connected in parallel are disposed on the second chip 2, and the area of the first chip 1 and the area of the second chip 2 are reduced by about 30% compared with the area of the chip in the prior art.
When the filter is designed, the series-parallel resonators can select different electromechanical coupling coefficients and frequencies according to different roll-off requirements, pass band matching characteristics and other indexes; in high bandwidth designs, high electromechanical coupling coefficients and large series-parallel frequency differences are necessary.
In the prior art, series-parallel resonators are arranged on a chip, and from the perspective of process implementation, in order to ensure the flatness of each layer on the chip, the thicknesses of a lower electrode and a piezoelectric layer are required to be consistent, and different thicknesses are only realized on an upper electrode to perform frequency shift, so that the series-parallel frequency difference is limited, as shown in fig. 2, a solid line in the figure is an impedance curve corresponding to the series resonators, and a dotted line is an impedance curve corresponding to the parallel resonators, so that it can be seen from the figure that the series-parallel frequency difference is small, especially the frequency of the parallel resonators; meanwhile, the piezoelectric layers are consistent in thickness and made of the same material, so that the electromechanical coupling coefficients of the series-parallel resonators are the same. Therefore, the filter with the existing structure has the problems of small frequency difference and same electromechanical coupling coefficient, and has poor use performance.
In the present embodiment, first resonator 11 and second resonator 21 satisfy one or several of the following conditions: the frequencies of the first resonator 11 and the second resonator 21 are different; the electromechanical coupling coefficients of the first resonator 11 and the second resonator 21 are different.
When the structure of the series resonator and the parallel resonator is respectively arranged on the two chips in the technical scheme of the invention, the thicknesses of the lower electrode, the piezoelectric layer and the upper electrode on different chips can be different, namely the packaging structure meets one or more of the following conditions: the thickness of the lower electrode of the first resonator 11 is different from the thickness of the lower electrode of the second resonator 21; the thickness of the piezoelectric layer of the first resonator 11 and the thickness of the piezoelectric layer of the second resonator 21 are different; the thickness of the upper electrode of the first resonator 11 and the thickness of the upper electrode of the second resonator 21 are different. With this structure, a wider range of frequency differences can be achieved on the first chip 1 and the second chip 2. As shown in fig. 5, there is a range of frequency differences between the series resonator frequency and the parallel resonator frequency.
Meanwhile, the materials of the piezoelectric layers on the first chip 1 and the second chip 2 can be different, the series-parallel resonators can have different electromechanical coupling coefficients, and the performance of the resonators can be more in variety, so that the purpose of improving the performance of the filter is achieved. As shown in fig. 6, in the graph, the dashed line and the solid line are frequency-suppression curves in the prior art and the embodiment of the present invention, respectively, and after the electromechanical coupling coefficient increases the degree of freedom of change, it can be seen that the overall insertion loss is improved to a certain extent.
Therefore, the structural form that the two chips are provided with the resonators is adopted, so that larger frequency difference and different electromechanical coupling coefficients can be realized, more flexibility is provided for the design of the filter, and better performances such as matching, out-of-band rejection and the like are guaranteed to be realized.
The filter uses an extra capacitor to match with the ground inductance to adjust out-of-band zero (notch), thereby ensuring higher rejection in the required frequency band.
The existing filter is generally realized by using a layout structure, but the capacitance value realized by the layout structure is limited, generally less than 0.1F, and for notch with fixed frequency, the capacitance value needs to be compensated by an inductance to the ground under the condition of smaller capacitance, so the inductance value is increased. The increase of the inductance firstly increases Fs (lower impedance point) and Fp (high impedance point) of the resonator, so that roll-off is deteriorated, and meanwhile, the inductance is realized by layout and substrate routing, and larger loss is introduced by longer routing, so that the insertion loss of the whole filter is also deteriorated to a certain degree.
In the technical solution of this embodiment, as shown in fig. 7, the filter further includes a capacitor 3, the capacitor 3 is disposed in the package structure, the capacitor includes a first electrode disposed on the first chip 1 and a second electrode disposed on the second chip 2, and in the package structure, the first electrode and the second electrode are opposite to each other to form the capacitor 3. The capacitance value of the capacitor 3 can be 0.005pF to 2pF, the capacitance value of the capacitor 3 is adjusted according to the relative area and/or distance between the first electrode and the second electrode, the relative position of the first chip 1 and the second chip 2 is adjusted during adjustment, the size of the capacitance value can be changed in such a way, and a large capacitor can be formed, so that the ground inductance can be reduced as much as possible, and the performances such as roll-off, insertion loss and the like are improved. The inductance value for the ground inductance is 0.05nH to 2nH, preferably 0.1nH to 1nH.
The capacitor 3 may also be arranged in another structure, as shown in fig. 8, the capacitor 3 is disposed outside the package structure, the first chip 1 is provided with a third pin 13, the second chip 2 is provided with a fourth pin 24, and the third pin 13 and the fourth pin 24 are connected to the capacitor 3. In this structure, the capacitor 3 is disposed outside the filter package structure, wherein the capacitor 3 may be disposed separately from the original package structure, or may be disposed integrally, and preferably, the capacitor 3 outside the package structure is disposed integrally on the outer wall of the second chip 2 to reduce the chip size.
As shown in fig. 9, the solid line in the graph corresponds to a large coupling capacitor, and the dotted line corresponds to a small coupling capacitor, and compared with the influence of the small coupling capacitor and the large coupling capacitor on the performance of the filter, it can be seen that the large coupling capacitor can achieve better out-of-band rejection. The capacitance value is preferably 0.01pF to 1pF.
For the same out-of-band zero position, the large coupling capacitor corresponds to smaller ground inductance, and the roll-off can be improved by adopting the small inductance. The definition of roll-off is that for the same suppression, the smaller the corresponding frequency difference, the better the roll-off. As shown in fig. 10, which is the rejection curve on the right side of the passband, the solid line is the improved and the dashed line is the previous performance. It can be seen from the figure that for the same rejection (say-60 dB), the frequencies corresponding to the solid line are lower, i.e. the frequencies can roll down to a certain rejection.
The use of a smaller inductor reduces the inductance of the inductor, with a smaller inductance corresponding to a higher Q value and therefore less loss, and therefore better insertion loss performance, as shown in fig. 11, where the solid and dashed lines are the performance after and before improvement, respectively.
As a preferred embodiment of the present invention, as shown in fig. 3 and 4, the first chip 1 is further provided with an input pin 14 and an output pin 15, which are respectively connected to the head end and the tail end of the series circuit, on the layout of the first chip 1, the middle part is provided with a plurality of first resonators 11 arranged in 1 row, and the two sides are provided with the input pin 14, the output pin 15 and the first pin 12; on the layout of the second chip 2, the middle is a plurality of second resonators 21 arranged in 1 row, and the sides are second pins 22 and ground pins 23. On the layouts of the first chip 1 and the second chip 2, the positions of the pins are not limited to specific positions, and the pins can form a series-parallel resonator structure of a filter.
By adopting the packaging structure of the bulk acoustic wave filter in the embodiment of the invention, the layout of the resonators on the first chip 1 and the second chip 2 is more reasonable, the additional increase of area is avoided, meanwhile, the operations such as packaging, cutting and the like are easier, and the working efficiency is higher.
The embodiment of the present invention further provides a method for packaging a filter, as shown in fig. 12, including the following steps:
s1: forming a plurality of first resonators and a plurality of first pins on a first surface of a first chip, wherein the plurality of first resonators are connected in series, and the first pins are connected between adjacent first resonators;
s2: forming a plurality of second resonators, a plurality of second pins and a plurality of grounding pins on the first surface of the second chip, wherein each second resonator is connected with an inductor, and each inductor is connected with one grounding pin in series;
s3: the first surface of the first chip and the first surface of the second chip are arranged in parallel and opposite to each other and then packaged to form a package structure, and the first pin and the second pin are bonded to constitute the filter.
In this embodiment, the first chip includes a mounting location of the first pin; the second chip comprises a second pin and a mounting position of a grounding pin; after the first resonator and the second resonator are arranged, a first pin is arranged at the installation position of the first pin, a second pin and a grounding pin are arranged at the installation positions of the second pin and the grounding pin, and the first pin and the second pin are just opposite to each other and are in bonding connection when in butt joint packaging.
The first resonator (series resonator) and the second resonator (parallel resonator) are respectively arranged on the two chips, so that the first resonator and the second resonator can form a series-parallel circuit by ensuring that the first pin and the second pin are bonded during packaging. In this embodiment, after the first pin/the second pin are set on the mounting positions, the first pin and the second pin can be set in opposite directions when the chip is in butt joint and packaged, so that the bonding accuracy can be ensured.
The above-described embodiments should not be construed as limiting the scope of the invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions can occur, depending on design requirements and other factors. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A bulk acoustic wave filter package, comprising:
the circuit comprises a first chip, a second chip and a third chip, wherein the first chip is provided with a plurality of first resonators which are connected in series to form a series circuit, and a first pin is connected to a line between two adjacent first resonators;
the second chip is provided with a plurality of second resonators, each second resonator is connected with an inductor in series, one end, far away from the inductor, of each second resonator is provided with a second pin, and one end, far away from the second resonators, of the inductor is provided with a grounding pin;
the first electrode is arranged on the first chip;
a second electrode disposed on the second chip;
the first chip and the second chip are superposed to form a packaging structure, the first pin and the second pin are bonded in the packaging structure, so that the first resonators and the second resonators form a filter, and the first electrode and the second electrode are opposite to each other to form a capacitor.
2. The package structure of a bulk acoustic wave filter according to claim 1, wherein the package structure satisfies one or more of the following conditions:
the thickness of the first resonator lower electrode is different from that of the second resonator lower electrode;
a thickness of the first resonator piezoelectric layer and a thickness of the second resonator piezoelectric layer are different;
the thickness of the first resonator upper electrode and the thickness of the second resonator upper electrode are different.
3. The package structure of a bulk acoustic wave filter according to claim 1, wherein a material of the first resonator piezoelectric layer and a material of the second resonator piezoelectric layer are different.
4. The package structure of a bulk acoustic wave filter according to claim 1, wherein an opposing area and/or a distance between the first electrode and the second electrode is set so that a capacitance value of the capacitor is 0.005pF to 2pF.
5. The package structure of a bulk acoustic wave filter according to claim 1, wherein the first chip is provided with a third pin, the second chip is provided with a fourth pin, and the third pin and the fourth pin are used for connecting with a plate of a capacitor outside the package structure.
6. The bulk acoustic wave filter package structure according to claim 1, wherein the first resonator and the second resonator satisfy one or both of the following conditions:
the frequencies of the first resonator and the second resonator are different;
the electromechanical coupling coefficients of the first resonator and the second resonator are different.
7. The package structure of a bulk acoustic wave filter according to claim 1, wherein on the layout of the first chip, the middle part is a plurality of the first resonators arranged in 1 row; and on the layout of the second chip, the middle part is provided with a plurality of second resonators arranged in 1 row.
8. A method for manufacturing a filter, the method being used for forming a package structure of a bulk acoustic wave filter according to any one of claims 1 to 7, the method comprising:
forming a plurality of first resonators and a plurality of first pins on a first surface of a first chip, wherein the plurality of first resonators are connected in series, and the first pins are connected between adjacent first resonators;
forming a plurality of second resonators, a plurality of second pins and a plurality of ground pins on the first surface of the second chip, wherein each of the second resonators is connected with an inductor, and each of the inductors is connected with one of the ground pins in series;
and arranging the first surface of the first chip and the first surface of the second chip in parallel and oppositely, packaging to form the packaging structure, and bonding the first pin and the second pin to form the filter.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910734509.1A CN110492864B (en) | 2019-08-09 | 2019-08-09 | Packaging structure of bulk acoustic wave filter and manufacturing method of filter |
| PCT/CN2020/107341 WO2021027673A1 (en) | 2019-08-09 | 2020-08-06 | Packaging structure of bulk acoustic wave filter and method for fabricating filter |
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| CN201910734509.1A CN110492864B (en) | 2019-08-09 | 2019-08-09 | Packaging structure of bulk acoustic wave filter and manufacturing method of filter |
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| CN110492864B (en) * | 2019-08-09 | 2023-04-07 | 天津大学 | Packaging structure of bulk acoustic wave filter and manufacturing method of filter |
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| CN111600565A (en) * | 2020-01-03 | 2020-08-28 | 诺思(天津)微系统有限责任公司 | Filter circuit, signal processing device and method for manufacturing filter circuit |
| CN111600571A (en) * | 2020-01-03 | 2020-08-28 | 诺思(天津)微系统有限责任公司 | Filter, signal processing device and method for manufacturing filter |
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| CN113644895B (en) * | 2021-06-30 | 2024-02-23 | 中国电子科技集团公司第十三研究所 | Thin film bulk acoustic resonator filter and filter assembly |
| CN117013985B (en) * | 2022-04-29 | 2024-07-05 | 锐石创芯(重庆)科技有限公司 | Filter, multiplexer, radio frequency front end module and preparation method of filter |
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| JP5038740B2 (en) * | 2007-02-23 | 2012-10-03 | パナソニック株式会社 | Band pass filter and manufacturing method thereof |
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| CN109787581A (en) * | 2018-11-28 | 2019-05-21 | 天津大学 | The filter based on bulk acoustic wave resonator with band logical and high pass dual function |
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