CN112187210B - Filter packaging structure, multiplexer and communication equipment - Google Patents
Filter packaging structure, multiplexer and communication equipment Download PDFInfo
- Publication number
- CN112187210B CN112187210B CN202011061549.3A CN202011061549A CN112187210B CN 112187210 B CN112187210 B CN 112187210B CN 202011061549 A CN202011061549 A CN 202011061549A CN 112187210 B CN112187210 B CN 112187210B
- Authority
- CN
- China
- Prior art keywords
- wafer
- filter
- lamb wave
- matching circuit
- resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 25
- 238000004891 communication Methods 0.000 title claims abstract description 12
- 235000019687 Lamb Nutrition 0.000 claims abstract description 111
- 230000008878 coupling Effects 0.000 claims description 20
- 238000010168 coupling process Methods 0.000 claims description 20
- 238000005859 coupling reaction Methods 0.000 claims description 20
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 15
- 210000001503 joint Anatomy 0.000 claims description 13
- 238000003032 molecular docking Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 108
- 230000000052 comparative effect Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 230000001629 suppression Effects 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 10
- 238000003780 insertion Methods 0.000 description 7
- 230000037431 insertion Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004021 metal welding Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
Abstract
The present invention relates to the field of filter technologies, and in particular, to a filter package structure, a multiplexer, and a communication device. In the packaging structure of the filter, the lamb wave resonators are used as matching units, the performance of the filter can be improved, the series resonators, the parallel resonators and the lamb wave resonators can be integrally packaged together through the packaging structure, and therefore the size occupied by the filter can be reduced.
Description
Technical Field
The present invention relates to the field of filter technologies, and in particular, to a filter package structure, a multiplexer, and a communication device.
Background
The wireless communication technology is rapidly developed towards the directions of multiple frequency bands and multiple modes, and a filter, a duplexer and a multiplexer which are key components of a radio frequency front end are widely concerned, and particularly, the wireless communication technology is widely applied to the field of personal mobile communication which develops the fastest speed. At present, most of filters and duplexers in the personal mobile communication field are manufactured by surface acoustic wave resonators or bulk acoustic wave resonators. Compared with a surface acoustic wave resonator, the bulk acoustic wave resonator has better performance, has the characteristics of high Q value, wide frequency coverage range, good heat dissipation performance and the like, and is more suitable for the development requirement of future 5G communication. The resonance of the bulk acoustic wave resonator is generated by mechanical waves instead of electromagnetic waves serving as a resonance source, and the wavelength of the mechanical waves is much shorter than that of the electromagnetic waves, so that the size of the bulk acoustic wave resonator and a filter formed by the bulk acoustic wave resonator is greatly reduced compared with that of a traditional electromagnetic filter; on the other hand, the crystal orientation growth of the piezoelectric crystal can be well controlled, so that the loss of the resonator is extremely small, the quality factor is high, and the complicated design requirements such as a steep transition zone, low insertion loss and the like can be met.
Generally, the requirements of users on bulk acoustic wave filters are that the insertion loss of the filter pass band is expected to be small as much as possible, but the out-of-band rejection is required to be large as much as possible, and the two requirements are in conflict with each other. In terms of reducing the insertion loss of the filter, a commonly used means is to increase the Q value of the bulk acoustic wave resonator, for example, by adding a circle of bumps around the top electrode of the resonator, the generated parasitic mode is reflected back to the effective area of the resonator, or adding a circle of suspension wings around the top electrode of the bulk acoustic wave resonator, etc., but the Q value improvement process is slow and even difficult; in addition, the conventional means for improving the out-of-band rejection of the filter is to increase the number of filter stages, but increasing the number of filter stages increases the number of resonators, which inevitably introduces additional loss and deteriorates the insertion loss of the filter passband.
Disclosure of Invention
The invention provides a filter packaging structure, a multiplexer and communication equipment, wherein a lamb wave resonator is used as a matching unit in a filter, the performance of the filter can be improved, a series resonator, a parallel resonator and the lamb wave resonator can be integrally packaged together by the packaging structure, and then the occupied volume of the filter can be reduced.
In one aspect of the present invention, a filter package structure is provided, where the filter includes a bulk acoustic wave filter, a first matching circuit and a second matching circuit, the first matching circuit and the second matching circuit respectively include at least one lamb wave resonator, and the package structure includes three groups of wafer stacking structures; the wafer stacking structure comprises an upper wafer and a lower wafer, the upper wafer and the lower wafer are connected through butt joint pins, the first side of the lower wafer faces the upper wafer, and the second side of the lower wafer is used for being connected with a packaging substrate; the series resonators and the parallel resonators of the bulk acoustic wave filter are arranged on opposite surfaces of the upper wafer facing the lower wafer in the first group of wafer stacking structure; the lamb wave resonator of the first matching circuit is arranged on the opposite surface of the upper wafer facing the lower wafer in the second group of wafer stacking structures; the lamb wave resonator of the second matching circuit is arranged on the opposite surface of the upper wafer facing the lower wafer in the third group of wafer stacking structures.
Optionally, the lower wafer includes a through via, the docking pin is connected to the first side of the pad on the second side of the lower wafer through the through via from the first side of the lower wafer, and the three groups of wafer stacking structures are connected to the same package substrate through the second side of the pad.
Optionally, the material of the upper wafers of the first group and the second group is lithium niobate, and the opposite surfaces of the upper wafers facing the lower wafer are provided with interdigital electrodes.
Optionally, the interdigital electrodes of the upper wafer are formed by etching.
Optionally, the first matching circuit and the second matching circuit each include a plurality of lamb wave resonators, and the plurality of lamb wave resonators are connected in series or in parallel.
In another aspect of the present invention, a package structure of a filter is further provided, where the filter includes a bulk acoustic wave filter, a first matching circuit and a second matching circuit, the first matching circuit and the second matching circuit respectively include at least one lamb wave resonator, the package structure includes an upper wafer and a lower wafer, the upper wafer and the lower wafer are connected through a docking pin, a first side of the lower wafer faces the upper wafer, and a second side of the lower wafer is used for connecting a package substrate, a series resonator and a parallel resonator of the bulk acoustic wave filter are disposed on a docking surface of the upper wafer facing the lower wafer, the lamb wave resonator of the first matching circuit and the lamb wave resonator of the second matching circuit are disposed on the docking surface of the lower wafer facing the upper wafer, or the series resonator and the parallel resonator of the bulk acoustic wave filter are disposed on the docking surface of the lower wafer facing the upper wafer, and the lamb wave resonator of the first matching circuit and the lamb wave resonator of the second matching circuit are disposed on the docking surface of the upper wafer facing the lower wafer The butt joint surface of the wafer.
Optionally, the lower wafer includes a through via, the docking pin is connected to a first side of a pad on a second side of the lower wafer through the through via from the first side of the lower wafer, and the second side of the pad is connected to the package substrate.
Optionally, a piezoelectric layer of the lamb wave resonator is made of lithium niobate, and the piezoelectric layer is provided with an interdigital electrode.
Optionally, the interdigital electrodes on the piezoelectric layer are formed by etching.
Optionally, the first matching circuit and the second matching circuit each include a plurality of lamb wave resonators, and the plurality of lamb wave resonators are connected in series or in parallel.
In another aspect of the present invention, a duplexer is further provided, including the above filter package structure.
In still another aspect of the present invention, a communication device is further provided, which includes the above filter package structure.
Drawings
For purposes of illustration and not limitation, the present invention will now be described in accordance with its preferred embodiments, particularly with reference to the accompanying drawings, in which:
fig. 1 is a circuit diagram of a filter according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an impedance curve of a lamb wave resonator and a transmission curve of a filter in an example provided by an embodiment of the invention;
FIG. 3 is a graph comparing the transmission curves of examples and comparative examples provided by an embodiment of the present invention;
FIG. 4 is a graph comparing return loss curves of ports of examples and comparative examples provided by an embodiment of the present invention;
FIG. 5 is a comparison of pass-band loss curves for examples and comparative examples provided by an embodiment of the present invention;
FIG. 6 is a circuit diagram of another filter provided in accordance with an embodiment of the present invention;
FIG. 7 is a graph of the impedance of lamb wave resonators LWR1 and LWR2 in parallel according to an embodiment of the present invention;
FIG. 8 is a graph comparing inhibition curves for examples and comparative examples provided by embodiments of the present invention;
fig. 9 is a circuit diagram of another filter provided in an embodiment of the present invention;
FIG. 10 is a graph of the impedance of lamb wave resonators LWR1 and LWR2 in series according to an embodiment of the present invention;
fig. 11 is a side view of a filter package structure according to an embodiment of the present invention;
fig. 12 is a bottom view of a filter package structure according to an embodiment of the invention;
fig. 13 is a side view of a filter package structure provided by an embodiment of the invention;
fig. 14 is a front view of a wafer 1 in a filter package structure according to an embodiment of the present invention;
fig. 15 is a front view of a wafer 2 in a filter package structure according to an embodiment of the invention;
fig. 16 is a side view of a filter package structure provided by an embodiment of the invention;
fig. 17 is a front view of a wafer 1 in a filter package structure according to an embodiment of the present invention;
fig. 18 is a front view of a wafer 2 in a filter package structure according to an embodiment of the invention.
Detailed Description
In the embodiment of the present invention, the matching element employs a lamb wave resonator with a large electromechanical coupling coefficient, which can improve the passband insertion loss of the filter and the suppression level outside the filter band, and in addition, the series resonator, the parallel resonator and the lamb wave resonator are packaged together in a packaging structure, which can further reduce the overall occupied space, as will be described in detail below.
Fig. 1 is a circuit diagram of a filter according to an embodiment of the present invention. As shown in fig. 1, the topology of the filter is a 5-4 structure (not limited to a 5-4 structure, but may be an M-N structure, where M and N are natural numbers, and only a 5-4 structure is taken as an example here), and includes 1 series branch and 4 parallel branches, where the series branch is formed by serially connecting series resonators S11, S12, S13, S14, and S15 in sequence, and is connected in series between the input port 1 and the output port 2, and in the 4 parallel branches, each parallel branch includes a parallel resonator, that is, a first parallel branch includes a parallel resonator P11, a second parallel branch includes a parallel resonator P12, a third parallel branch includes a parallel resonator P13, a fourth parallel branch includes a parallel resonator P14, and one end of each of the parallel resonators P11, P12, P13, and P14 is connected to the series branch, and the other end is grounded. Further, a first lamb wave resonator LWR1 connected in parallel is provided between the series resonator S11 and the input port 1, and a second lamb wave resonator LWR2 connected in parallel is provided between the series resonator S15 and the output port 2. The stack thickness of each of the series resonators S11, S12, S13, S14, and S15 is adjusted so that the series resonance frequency of the series resonator is located at the center frequency of the bulk acoustic wave filter, and the parallel resonators P11, P12, P13, and P14 need to be loaded with mass loads so that the series resonance frequencies thereof are all lower than the series resonance frequency of the series resonator, while the parallel resonance frequencies of the parallel resonators P11, P12, P13, and P14 are located in the vicinity of the center frequency of the bulk acoustic wave filter, whereby a band pass filter can be formed by optimizing the resonator area, and since the bulk acoustic wave filter is capacitive as a whole, an inductive element is required as a matching element to be matched to 50 ohms, and in the present embodiment, a single lamb wave resonator is used as a matching element to be connected in parallel between the bulk acoustic wave filter and the input port and the output port.
In the filter shown in fig. 1, when using a lamb wave resonator as a matching element, the lamb wave resonator satisfies the following requirements at the same time: the effective electromechanical coupling coefficient of the lamb wave resonator is more than 2.2 times of the effective electromechanical coupling coefficient of the bulk acoustic wave resonator in the filter, the series resonance frequency point and the parallel resonance frequency point of the lamb wave resonator are respectively positioned on two sides of the passband of the bulk acoustic wave filter, and the Q value of the lamb wave resonator is larger than the Q value of a common patch inductor.
The above is verified by the following embodiments. A filter (hereinafter referred to as the present embodiment) with a frequency coverage range of 5.15GHz-5.33GHz is designed according to the circuit diagram shown in FIG. 1, and the comparison example is a matching mode of a conventional patch inductor. The effective electromechanical coupling coefficient of the bulk acoustic wave resonator used in the bulk acoustic wave filter is 7.3%, the effective electromechanical coupling coefficient of the lamb wave resonator is 16%, the piezoelectric material of the lamb wave resonator is lithium niobate, the effective electromechanical coupling coefficient higher than that of aluminum nitride can be obtained, and in addition, the series resonance frequency point can fall to the left side of the passband of the filter by adjusting the thickness of the piezoelectric layer. Fig. 2 is a lamb wave resonator impedance curve and a filter transmission curve in an example provided by an embodiment of the present invention. In fig. 2, the broken line is an impedance curve of the lamb wave resonator in the embodiment, and the solid line is a transmission curve diagram of the embodiment. As shown in fig. 2, the series resonance frequency point is around 4.9GHz, while the parallel resonance frequency point is located on the right side of the filter passband. Because lamb waves are equivalent to short circuits at series resonance frequency points, a lamb wave resonator used as parallel matching can generate a suppression zero point on the left side of a filter passband, and the suppression degree nearby is improved.
FIG. 3 is a graph comparing inhibition curves of examples and comparative examples provided by the embodiment of the present invention. As shown in fig. 3, the solid line is the transfer curve of the comparative example, and the broken line is the transfer curve of the present example. From the curve shown in fig. 3, the suppression degree on the left side is greatly improved, the maximum is improved by 15dB, and the deepest suppression point is a suppression zero point introduced by the series resonance frequency point of the lamb wave resonator.
Fig. 4 is a graph comparing return loss curves of ports of examples and comparative examples provided by an embodiment of the present invention. As shown in fig. 4, the dotted line is the port return loss curve of the present embodiment, and the solid line is the port return loss curve of the comparative example, and it can be seen from fig. 4 that the return loss of the present embodiment is slightly deteriorated, mainly due to the change of the equivalent inductance of the lamb wave resonator with the frequency.
Fig. 5 is a comparison of pass-band loss curves for examples and comparative examples provided by embodiments of the present invention. As shown in fig. 5, the broken line is the pass band loss curve of the present example, and the solid line is the pass band loss curve of the comparative example, and it can be seen from fig. 5 that the pass band insertion loss is improved by 0.2dB because the Q value of the lamb wave resonator is larger than the Q value of the patch inductor.
Fig. 6 is a circuit diagram of another filter according to an embodiment of the present invention. As shown in fig. 6, the circuit diagram of the filter is different from that of the filter shown in fig. 1 in that the matching elements are different, and in the example shown in fig. 6, the matching elements include 2 lamb wave resonators (2 lamb wave resonators are taken as an example in the present embodiment, and are not limited to 2 resonators), and are connected in parallel between the input port 1 and the output port 2.
As shown in fig. 6, the matching element between the series resonator S11 and the input port 1 includes two first lamb wave resonators LWR1, LWR2, and the matching element between the series resonator S15 and the output port 2 includes two second lamb wave resonators LWR3, LWR 4. When four lamb wave resonators are used as matching elements, the following conditions should be satisfied: firstly, the effective electromechanical coupling coefficient of the lamb wave resonator is more than 2.2 times of the effective electromechanical coupling coefficient of the bulk acoustic wave resonator in the filter, secondly, the series resonance frequency point and the parallel resonance frequency point of the lamb wave resonator are respectively positioned at two sides of the passband of the bulk acoustic wave filter, thirdly, the Q value of the lamb wave resonator is larger than the Q value of a common patch inductor, fourthly, the effective electromechanical coupling coefficients of two parallel lamb wave resonators at the same connecting position can be different, and the series resonance frequency points need to be staggered.
Similarly, the following is a description of the above aspects. A filter with the frequency coverage range of 5.15GHz-5.33GHz is designed according to the circuit diagram shown in FIG. 6, and the comparison example is the matching mode of the existing patch inductor. The effective electromechanical coupling coefficient of the bulk acoustic wave resonator used in the bulk acoustic wave filter is 7.3%, the effective electromechanical coupling coefficient of the lamb wave resonators LWR1 and LWR2 which are connected in parallel is 16%, the piezoelectric material of the lamb wave resonators is lithium niobate, the effective electromechanical coupling coefficient higher than that of aluminum nitride can be obtained, in addition, the series resonance frequency point of the lamb wave resonators can fall to the left side of the pass band of the filter by adjusting the thickness of the piezoelectric layers of the lamb wave resonators, and the series resonance frequency points of the lamb wave resonators LWR1 and LWR2 are not coincident and staggered with each other.
FIG. 7 is a graph of impedance of lamb wave resonators LWR1 and LWR2 in parallel in an example provided by an embodiment of the present invention. As shown in fig. 7, the impedance curve includes 2 series resonance frequency points Fs1 and Fs2, which may generate two suppression zeros on the left side of the filter passband, improving the suppression degree nearby.
Fig. 8 is a graph comparing the transmission curves of examples and comparative examples provided by an embodiment of the present invention. In fig. 8, the solid line is a transmission curve of a comparative example, that is, a transmission curve matched by a patch inductor in a matching element, and the dotted line is a transmission curve of the present embodiment, that is, a transmission curve matched by 2 parallel lamb wave resonators, and as can be seen from fig. 8, two suppression zeros are provided on the left side of the transmission curve, and the suppression degree in the vicinity thereof is greatly improved, and the maximum is improved by 15 dB.
Fig. 9 is a circuit diagram of another filter according to an embodiment of the present invention. As shown in fig. 9, the circuit diagram of the filter is different from that of the filter shown in fig. 1 in that the matching elements are different from each other, and in the example shown in fig. 9, 2 lamb wave resonators (2 lamb wave resonators are taken as an example in the present embodiment, and are not limited to 2 resonators), which are connected in series between the bulk acoustic wave filter and the input port and the output port.
As shown in fig. 9, the matching element between the series resonator S11 and the input port 1 includes two first lamb wave resonators LWR1, LWR2, and the matching element between the series resonator S15 and the output port 2 includes two second lamb wave resonators LWR3, LWR 4. When four lamb wave resonators are used as matching elements, the following conditions should be satisfied: firstly, the effective electromechanical coupling coefficient of the lamb wave resonator is more than 2.2 times of the effective electromechanical coupling coefficient of the bulk acoustic wave resonator in the filter, secondly, the series resonance frequency point and the parallel resonance frequency point of the lamb wave resonator are respectively positioned at two sides of the passband of the bulk acoustic wave filter, thirdly, the Q value of the lamb wave resonator is larger than the Q value of a common patch inductor, fourthly, the effective electromechanical coupling coefficients of two serially connected lamb wave resonators at the same connecting position can be different, and the parallel resonance frequency points need to be staggered.
Fig. 10 is an impedance curve of lamb wave resonators LWR1 and LWR2 in series in an example provided by an embodiment of the invention. As shown in fig. 10, the impedance curve has two parallel resonance frequency points Fp1 and Fp 2. In this embodiment, the lamb wave resonators are used in series matching, so that the parallel resonance frequency points are equivalent to open circuits, and an additional suppression zero appears on the right side of the filter passband.
With the above embodiments, when the matching element uses a lamb wave resonator with a large electromechanical coupling coefficient, the passband insertion loss of the filter can be effectively improved, and the suppression level outside the filter band can be improved.
Fig. 11 is a side view of a filter package structure according to an embodiment of the invention. In the package structure shown in fig. 11, the bulk acoustic wave filter and the lamb wave resonators in the two matching circuits are integrally packaged together, and the package form is an inverted package. As shown in fig. 11, the filter package structure includes a wafer 1 and a wafer 2, which are stacked, all resonators (series resonators and parallel resonators) of the bulk acoustic wave filter are disposed on a surface of the wafer 1 facing the wafer 2, the wafer 2 is not provided with a resonator, which functions as a protective cover plate between the wafer 1 and a substrate, and the wafer 1 and the wafer 2 are connected by a butt-joint pin; the filter packaging structure further comprises a wafer 3 and a wafer 4, wherein the lamb wave resonator LWR1 in the first matching circuit is arranged on the surface, facing the wafer 4, of the wafer 3, the wafer 4 is located between the wafer 3 and the substrate and used as a protective cover plate, and the wafer 3 and the wafer 4 are connected through butt joint pins; the filter packaging structure further comprises a wafer 5 and a wafer 6, wherein the lamb wave resonator LWR2 in the second matching circuit is arranged on the surface, facing the wafer 6, of the wafer 5, the wafer 6 is located between the wafer 5 and the substrate and serves as a protective cover plate, and the wafer 5 and the wafer 6 are connected through butt-joint pins.
Through holes are formed in the wafers 2, 4 and 6, butt joint pins on the three wafers are connected with the bonding pads through the through holes, the bonding pads are connected with the base plate through the solder balls, and the wafers 2, 4 and 6 are connected with the same base plate. The wafer 3 and the wafer 5 are made of lithium niobate, and interdigital electrodes are manufactured on the surfaces of the lithium niobate.
Fig. 12 is a bottom view of a filter package structure according to an embodiment of the invention. Wafer 2, wafer 4 and wafer 6 are not shown in fig. 12. As shown in fig. 12, a bulk acoustic wave filter 701, lamb wave resonators LWR1-801 and lamb wave resonators LWR2-802 are included on a substrate 601, and lamb wave resonators LWR1-801 and lamb wave resonators LWR2-802 are provided on both sides of the bulk acoustic wave filter 701 for use as matching circuits. Series resonators S11, S12, S13, S14 and S15, parallel resonators P11, P12, P13 and P14, ground pins G1, G2, G3 and G4, an input terminal S1 and an output terminal S2 are fabricated on the wafer 1 of the bulk acoustic wave filter 701.
Fig. 13 is a side view of a filter package structure according to an embodiment of the invention. In fig. 13, lamb wave resonators LWR1 and LWR2 are integrally packaged in a bulk acoustic wave filter, and the package is a 2D package, and the volume of the filter is smaller after the package. As shown in fig. 13, the bulk acoustic wave filter includes a wafer 1, a wafer 2, and a substrate, the wafer 2 is located between the wafer 1 and the substrate, all resonators of the bulk acoustic wave filter are fabricated on the lower surface of the wafer 1, and lamb wave resonators LWR1 and lamb wave resonators LWR2 used as matching resonators are fabricated on the upper surface of the wafer 2. The piezoelectric materials of the lamb wave resonator LWR1 and the lamb wave resonator LWR2 are lithium niobate, and interdigital electrodes are manufactured on the surfaces of the lithium niobate. The wafer 2 also plays a role in protecting the cover plate, the wafer 1 and the wafer 2 are also provided with butt joint pins, the butt joint pins below the wafer 1 and the butt joint pins on the wafer 2 are in bonding connection, wherein the wafer 2 is provided with through holes, the signal end and the ground end of a filter manufactured by the wafer 1 and the wafer 2 are connected to a bonding pad below the wafer 2 through the through holes, and the bonding pad below the wafer 2 can be connected to a packaging substrate through a metal welding ball.
Fig. 14 is a front view of a wafer 1 in a filter package structure according to an embodiment of the invention. As shown in fig. 14, series resonators S11, S12, S13, S14 and S15, parallel resonators P11, P12, P13 and P14, ground pins G1, G2, G3 and G4, an input terminal S1 and an output terminal S2 are fabricated on the wafer 1. Fig. 15 is a front view of a wafer 2 in a filter package structure according to an embodiment of the invention. As shown in fig. 15, lamb wave resonator LWR1 and lamb wave resonator LWR2 used as matching are fabricated on wafer 2, piezoelectric layer 501 of lamb wave resonator LWR1 is made of lithium niobate, interdigital electrodes are fabricated on the upper surface of the lithium niobate, the interdigital electrodes include signal input terminal 502 of the positive electrode and signal output terminal 503 of the negative electrode, piezoelectric layer 601 of lamb wave resonator LWR2 is made of lithium niobate, and the interdigital electrodes are fabricated on the upper surface of the lithium niobate and include signal input terminal 602 of the positive electrode and signal output terminal 603 of the negative electrode.
Fig. 16 is a side view of a filter package structure according to an embodiment of the invention. The side view of the package structure shown in fig. 16 is different from the side view of the package structure shown in fig. 13 in that all the resonators of the bulk acoustic wave filter are formed on the upper surface of the wafer 2, and the lamb wave resonators LWR1 and LWR2 of the matching circuit are formed on the lower surface of the wafer 1 in the package structure shown in fig. 16.
Fig. 17 is a front view of a wafer 1 in a filter package structure according to an embodiment of the invention. As shown in fig. 17, lamb wave resonator LWR1 and lamb wave resonator LWR2 used as matching are fabricated on wafer 1, piezoelectric layer 701 of lamb wave resonator LWR1 is made of lithium niobate, interdigital electrodes are fabricated on the upper surface of the lithium niobate, the interdigital electrodes include signal input terminal 702 of the positive electrode and signal output terminal 703 of the negative electrode, piezoelectric layer 801 of lamb wave resonator LWR2 is made of lithium niobate, and the interdigital electrodes are fabricated on the upper surface of the lithium niobate and include signal input terminal 802 of the positive electrode and signal output terminal 803 of the negative electrode.
Fig. 18 is a front view of a wafer 2 in a filter package structure according to an embodiment of the invention. As shown in fig. 18, series resonators S11, S12, S13, S14 and S15, parallel resonators P11, P12, P13 and P14, ground pins G1, G2, G3 and G4, an input terminal S1 and an output terminal S2 are fabricated on the wafer 2.
According to the packaging structure provided by the embodiment of the invention, the lamb wave resonators capable of improving the performance of the filter and the bulk acoustic wave filter are integrally packaged together, namely the packaging structure can integrally package the series resonators, the parallel resonators and the lamb wave resonators together, so that the space occupied by the filter can be reduced.
The embodiment of the invention provides a duplexer which comprises the filter packaging structure. The filter packaging structure packages the bulk acoustic wave filter and the lamb wave resonator together, so that the volume occupied by the filter can be reduced, and further the space occupied by the duplexer can be further reduced.
The embodiment of the invention provides communication equipment comprising the filter packaging structure. The bulk acoustic wave filter and the lamb wave resonator are packaged together by the filter packaging structure, so that the volume occupied by the filter can be reduced, and further the space occupied by communication equipment can be further reduced.
The above-described embodiments should not be construed as limiting the scope of the invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions can occur, depending on design requirements and other factors. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (12)
1. A filter packaging structure is characterized in that the filter comprises a bulk acoustic wave filter, a first matching circuit and a second matching circuit, the first matching circuit and the second matching circuit respectively comprise at least one lamb wave resonator, and the packaging structure comprises three groups of wafer stacking structures;
each group of wafer stacking structures respectively comprises an upper wafer and a lower wafer, the upper wafer and the lower wafer are connected through butt joint pins, the first side of the lower wafer faces the upper wafer, and the second side of the lower wafer is used for being connected with a packaging substrate;
the series resonators and the parallel resonators of the bulk acoustic wave filter are arranged on opposite surfaces of the upper wafer facing the lower wafer in the first group of wafer stacking structure;
the lamb wave resonator of the first matching circuit is arranged on the opposite surface of the upper wafer facing the lower wafer in the second group of wafer stacking structures;
the lamb wave resonator of the second matching circuit is arranged on the opposite surface of the upper wafer facing the lower wafer in the third group of wafer stacking structure;
the effective electromechanical coupling coefficient of the lamb wave resonator is more than 2.2 times of the effective electromechanical coupling coefficient of the bulk acoustic wave filter, the series resonance frequency point and the parallel resonance frequency point of the lamb wave resonator are respectively positioned at two sides of the passband of the bulk acoustic wave filter, and the Q value of the lamb wave resonator is larger than a specified value.
2. The filter package structure of claim 1, wherein the lower wafer of each of the three wafer stacking structures includes a through via, the docking pins of each of the three wafer stacking structures are connected to a first side of a pad of a second side of the lower wafer through the via from the first side of the lower wafer, and the three wafer stacking structures are connected to a same package substrate through the second side of the pad.
3. The filter package structure according to claim 1 or 2, wherein the upper wafer of the first wafer stack structure and the upper wafer of the second wafer stack structure are made of lithium niobate, and an interdigital electrode is disposed on an opposite surface of the upper wafer facing the lower wafer of each of the first wafer stack structure and the second wafer stack structure.
4. The filter package structure of claim 3, wherein the interdigital electrodes of the upper wafer of each of the first and second wafer stack structures are formed by etching.
5. The filter package structure of claim 1 or 2, wherein the first matching circuit and the second matching circuit each comprise a plurality of lamb wave resonators, the plurality of lamb wave resonators being connected in series or in parallel.
6. A filter packaging structure is characterized in that the filter comprises a bulk acoustic wave filter, a first matching circuit and a second matching circuit, the first matching circuit and the second matching circuit respectively comprise at least one lamb wave resonator, the packaging structure comprises an upper wafer and a lower wafer, the upper wafer and the lower wafer are connected through a butt joint pin, the first side of the lower wafer faces the upper wafer, the second side of the lower wafer is used for being connected with a packaging substrate,
the series resonator and the parallel resonator of the bulk acoustic wave filter are arranged on the butt joint surface of the upper wafer facing the lower wafer, the lamb wave resonator of the first matching circuit and the lamb wave resonator of the second matching circuit are arranged on the butt joint surface of the lower wafer facing the upper wafer,
alternatively, the first and second electrodes may be,
the series resonator and the parallel resonator of the bulk acoustic wave filter are arranged on the butt joint surface of the lower wafer facing the upper wafer, and the lamb wave resonator of the first matching circuit and the lamb wave resonator of the second matching circuit are arranged on the butt joint surface of the upper wafer facing the lower wafer;
the effective electromechanical coupling coefficient of the lamb wave resonator is more than 2.2 times of the effective electromechanical coupling coefficient of the bulk acoustic wave filter, the series resonance frequency point and the parallel resonance frequency point of the lamb wave resonator are respectively positioned at two sides of the passband of the bulk acoustic wave filter, and the Q value of the lamb wave resonator is larger than a specified value.
7. The filter package structure of claim 6, wherein the lower wafer includes a via therethrough, the docking pin is connected to a first side of the pad on a second side of the lower wafer from the first side of the lower wafer through the via, and the second side of the pad is connected to the package substrate.
8. The filter packaging structure according to claim 6 or 7, wherein a piezoelectric layer of the lamb wave resonator is made of lithium niobate, and the piezoelectric layer is provided with interdigital electrodes.
9. The filter packaging structure of claim 8, wherein the interdigitated electrodes on the piezoelectric layer are formed by etching.
10. The filter package structure of claim 6 or 7, wherein the first matching circuit and the second matching circuit each comprise a plurality of lamb wave resonators, the plurality of lamb wave resonators being connected in series or in parallel.
11. A duplexer comprising a filter package according to any one of claims 1 to 5 or comprising a filter package according to any one of claims 6 to 10.
12. A communication device comprising a filter package according to any of claims 1 to 5 or comprising a filter package according to any of claims 6 to 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011061549.3A CN112187210B (en) | 2020-09-30 | 2020-09-30 | Filter packaging structure, multiplexer and communication equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011061549.3A CN112187210B (en) | 2020-09-30 | 2020-09-30 | Filter packaging structure, multiplexer and communication equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112187210A CN112187210A (en) | 2021-01-05 |
| CN112187210B true CN112187210B (en) | 2021-12-28 |
Family
ID=73948422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011061549.3A Active CN112187210B (en) | 2020-09-30 | 2020-09-30 | Filter packaging structure, multiplexer and communication equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112187210B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016029766A (en) * | 2014-07-25 | 2016-03-03 | 太陽誘電株式会社 | Filter and duplexer |
| CN109639255A (en) * | 2018-12-25 | 2019-04-16 | 天津大学 | A kind of duplexer |
| CN110635778A (en) * | 2019-09-17 | 2019-12-31 | 武汉大学 | Monolithic integrated duplexer |
| CN111327296A (en) * | 2020-02-27 | 2020-06-23 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave filter element, method of forming the same, multiplexer, and communication apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI780103B (en) * | 2017-05-02 | 2022-10-11 | 日商日本碍子股份有限公司 | Elastic wave element and method of manufacturing the same |
-
2020
- 2020-09-30 CN CN202011061549.3A patent/CN112187210B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016029766A (en) * | 2014-07-25 | 2016-03-03 | 太陽誘電株式会社 | Filter and duplexer |
| CN109639255A (en) * | 2018-12-25 | 2019-04-16 | 天津大学 | A kind of duplexer |
| CN110635778A (en) * | 2019-09-17 | 2019-12-31 | 武汉大学 | Monolithic integrated duplexer |
| CN111327296A (en) * | 2020-02-27 | 2020-06-23 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave filter element, method of forming the same, multiplexer, and communication apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112187210A (en) | 2021-01-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20240030896A1 (en) | Solidly-mounted transversely-excited bulk acoustic resonator split ladder filter | |
| US10840888B2 (en) | Multiplexer | |
| US10615775B2 (en) | Multiplexer, transmission apparatus, and reception apparatus | |
| US10171113B2 (en) | Multiplexer, transmission device, and reception device | |
| US6710677B2 (en) | Band reject filters | |
| US6995631B2 (en) | Ladder filter, branching filter, and communication apparatus | |
| US6924715B2 (en) | Band reject filters | |
| CN110431744B (en) | Multiplexer, high-frequency front-end circuit, and communication device | |
| JP6556668B2 (en) | Filters and multiplexers | |
| CN111010143A (en) | Bulk acoustic wave filter, method for manufacturing the same, and duplexer | |
| US8988162B2 (en) | Filter and duplexer | |
| WO2004112246A1 (en) | Surface acoustic wave duplexer | |
| CN111342806B (en) | Piezoelectric filter having lamb wave resonator, duplexer, and electronic device | |
| CN112187210B (en) | Filter packaging structure, multiplexer and communication equipment | |
| US10651822B2 (en) | Multiplexer | |
| WO2022042463A1 (en) | Method for optimising out-of-band suppression of filter, and filter, multiplexer, and communication device | |
| CN111969978B (en) | Filter design method, filter, multiplexer and communication equipment | |
| US11558072B2 (en) | Multiplexer | |
| WO2003096533A1 (en) | Elastic surface wave element, elastic surface wave device, and branching filter | |
| US10972072B2 (en) | Composite multiplexer | |
| US20240080014A1 (en) | Acoustic wave filter and multiplexer | |
| JP2003152501A (en) | Surface acoustic wave element and surface acoustic wave device | |
| WO2012132093A1 (en) | Acoustic wave device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PP01 | Preservation of patent right | ||
| PP01 | Preservation of patent right |
Effective date of registration: 20240130 Granted publication date: 20211228 |