CN201893341U - Double-heterojunction acoustic charge transport delay line based on gallium nitride - Google Patents
Double-heterojunction acoustic charge transport delay line based on gallium nitride Download PDFInfo
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- CN201893341U CN201893341U CN2010205472646U CN201020547264U CN201893341U CN 201893341 U CN201893341 U CN 201893341U CN 2010205472646 U CN2010205472646 U CN 2010205472646U CN 201020547264 U CN201020547264 U CN 201020547264U CN 201893341 U CN201893341 U CN 201893341U
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- gallium nitride
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Abstract
The utility model discloses a double-heterojunction acoustic charge transport delay line based on gallium nitride, which comprises a substrate. The double-heterojunction acoustic charge transport delay line is characterized in that a first buffering layer is arranged on the substrate, the first buffering layer is provided with a gallium nitride semi-insulation type substratum, the gallium nitride semi-insulation type substratum is provided with a second buffering layer, the second buffering layer is provided with a first gallium nitride aluminum barrier layer, the first gallium nitride aluminum barrier layer is provided with a gallium nitride channel layer, the gallium nitride channel layer is provided with a second gallium nitride aluminum barrier layer, metal patterns capable of forming acoustic surface wave interdigital transducers are disposed at two ends of the gallium nitride semi-insulation type substratum, and electrodes are disposed at two ends of the second gallium nitride aluminum barrier layer. Band offset and negative polarization charge on upper and lower heterojunction interfaces in a double-heterojunction structure can form symmetrical quantum well structures, thereby increasing quantum restriction and restraining spreading movement of the charge in a perpendicular direction. Gallium nitride has excellent piezoelectric performance, and application scope of gallium nitride ACT (acoustic charge transport) technology can be expanded. Gallium nitride materials on sapphire have higher acoustic surface wave speed, and are favorable for high-frequency application. The large band offset and the strong polarization charge at AlGaN/GaN heterojunction interfaces can generate high-surface-density two-dimensional electro gas.
Description
Technical field
The utility model relates to a kind of Acoustic Charge transport devices (ACT, Acoustic Charge Transport), especially a kind of double heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material.
Background technology
The ACT device is a kind of high-frequency high-speed analogue signal processor, is a kind of novel semi-conductor device that charge coupled device and SAW (Surface Acoustic Wave) device are combined, and can directly apply to RF application.It is a kind of complete programmable analogue signal processor, does not need A/D and D/A converter, have that conversion speed is fast, reliability is high, low in energy consumption, size is little, advantage such as in light weight.Transversal filter, sef-adapting filter and the equalizer etc. that constitute with the ACT device have been widely used in military defense, the business system.
For the ACT device, choosing of material is of crucial importance, and direct relation the success or not of ACT device research.The selected semi-conducting material of ACT requirement on devices had both had suppresses electrical property to obtain higher surface acoustic wave electric potential field, requires it to possess high electron mobility to obtain high transfer efficiency simultaneously.The GaAs material has piezoelectric property and high electron mobility, meets the ACT specification requirement, is the ideal material of ACT technology always.But, GaAs material blemish in an otherwise perfect thing be its piezoelectric property a little less than, need bigger power could produce enough big surface acoustic wave electric potential field, and generally only be applied to arrowband ACT device, though utilize the piezoelectric membrane technology can obtain the bigger device of bandwidth ratio, but along with improving constantly of signal frequency, the distance between the surface acoustic wave interdigital transducer finger is more and more littler, and technology realizes relatively difficulty.This has limited the development of GaAs ACT technology to a certain extent.
Summary of the invention
The utility model purpose is: provide a kind of scope of application wide, be fit to the GaN dual heterogeneity node Acoustic Charge Transport Delay Line of frequency applications.
The technical solution of the utility model is: a kind of double heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material, comprise substrate, it is characterized in that: described substrate is provided with first resilient coating, described first resilient coating is provided with the semi-insulating type substrate of gallium nitride, the semi-insulating type substrate of described gallium nitride is provided with second resilient coating, described second resilient coating is provided with the first aluminum gallium nitride barrier layer, the described first aluminum gallium nitride barrier layer is provided with gallium nitride layer, described gallium nitride layer is provided with the second aluminum gallium nitride barrier layer, the described first aluminum gallium nitride barrier layer, gallium nitride layer, four limits of the second aluminum gallium nitride barrier layer and second resilient coating are etched away to form ACT charge transport raceway groove, there is the metal pattern that can constitute surface acoustic wave interdigital transducer at the semi-insulating type substrate of described gallium nitride two ends, and there is electrode at the described second aluminum gallium nitride barrier layer two ends.
Further, described first resilient coating is gallium nitride resilient coating or aluminum nitride buffer layer.
Further, described second resilient coating is the gallium nitride resilient coating, and is necessary for the doping of p type.
Further, described substrate is sapphire substrate or silicon carbide substrate.
Operation principle: in order to realize high charge transport efficient, ACT technology raceway groove must satisfy following 3 factors: first, in order to ensure the high efficient that transports, the capable ripple electric potential field that the surface acoustic wave that must guarantee to be excited by interdigital transducer produces in communication process can not fallen by the electric field shielding that free charge in the semiconductor layer is created.The second, the charge carrier in conductive layer, barrier layer or the semiconductor that raceway groove is wanted to suppress contiguous escapes in the raceway groove.The 3rd, raceway groove can be limited to signal charge in the raceway groove, eliminates other the current pathway except that raceway groove.
Free charge in the semiconductor layer masks the capable ripple electric potential field that surface acoustic wave forms, and can adopt etching usually, protonation or be biased this three kinds of ways outward.These three kinds of ways respectively have pluses and minuses, and etching is held the very easy surface irregularity that makes, and is unfavorable for frequency applications; Protonation can only be applied to the thin epitaxy layer, and adopts the method for protonation to be easy to destroy crystal structure, is unfavorable for SAW propagating; Adopt this way of applying bias need consider factors such as semiconductor characteristics, doping, comparatively complicated.The gallium nitride double-heterostructure ACT that is adopted among the present invention, the very approaching surface of raceway groove, far be shallower than traditional buried layer ACT raceway groove position (approximately half wavelength), therefore, characteristics at device architecture of the present invention, adopt the method for etching that the first aluminum gallium nitride barrier layer, gallium nitride layer, the second aluminum gallium nitride barrier layer and the second resilient coating two ends are etched away, surface acoustic wave interdigital transducer directly is made on the semi-insulating type substrate of gallium nitride, eliminates the influence of free charge the shielding of row ripple electric potential field.
Disturb the signal charge that is bound by in the potential energy well in the raceway groove for the charge carrier in the conductive layer, barrier layer or the semiconductor that suppress vicinity escapes into, have following three kinds of methods to consider: 1, make guard ring.2, adopt the method for grid etching.3, ion is carried out in outer other zone of raceway groove and inject the destruction lattice structure.But, make guard ring and can cause the RF feedback problem.Because etching and ion injection method can be applied to heterojunction structure, among the present invention, adopt the method for etching, the both sides up and down (overlooking) of the first aluminum gallium nitride barrier layer, gallium nitride layer, the second aluminum gallium nitride barrier layer and second resilient coating are etched away, to form ACT charge transport raceway groove.
Traditional method is to adopt simple p-n-p structure to form the p type semiconductor layer that exhausts signal charge is suppressed in raceway groove.But for gallium nitride, this method but is not easy to realize.Because gallium nitride is carried out relatively difficulty of p type doping, be difficult to realize, therefore, adopt the mode of double heterojunction among the present invention.Since the heterojunction boundary place can with discontinuity, form potential energy well at the heterojunction boundary place, double heterojunction is at the quantum well structure that forms symmetry at the interface.The potential energy well that produces can limit electric charge diffusion in vertical direction, and signal charge is limited near the heterojunction boundary the raceway groove.
The utility model has the advantages that:
In the double-heterostructure up and down can be with rank and the negative polarization electric charge on two heterojunction boundaries can form symmetrical quantum well structure, improved quantum limit, inhibition electric charge diffusion motion in vertical direction.
2. gallium nitride has excellent piezoelectric property, can enlarge gallium nitride ACT The Application of Technology scope.
3. gallium nitride material has bigger acoustic surface wave speed on the sapphire, helps frequency applications.
4.AlGaN/GaN the big of heterojunction boundary place can produce the high areal density two-dimensional electron gas with strong polarization charge in band band rank.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further described:
Fig. 1 is the cross-sectional view of the double heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material of the present utility model.
Fig. 2 is the vertical view of the double heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material of the present utility model.
Fig. 3 is the surface acoustic wave interdigital transducer figure of the double heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material of the present utility model.
Fig. 4 is the heterojunction boundary place conduction band diagram of the double heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material of the present utility model.
Embodiment
Embodiment: as shown in Figure 1, 2, 3: extension gallium nitride resilient coating 2 is to reduce by sapphire and the caused high defect concentration of gallium nitride lattice mismatch the semi-insulating type substrate 3 of extension gallium nitride on the gallium nitride resilient coating 2 on sapphire substrate 1.Extension gallium nitride resilient coating 4 on the semi-insulating type substrate 3 of gallium nitride, extension aluminum gallium nitride barrier layer 5 on the gallium nitride resilient coating 4, extension gallium nitride channel layer 6 on the aluminum gallium nitride barrier layer 5, extension aluminum gallium nitride barrier layer 7 on the gallium nitride channel layer 6.Four limits of described resilient coating 4, aluminum gallium nitride barrier layer 5, gallium nitride layer 6 and aluminum gallium nitride barrier layer 7 are etched away to form ACT charge transport raceway groove 10.There are input 8/ output 9 Ohmic electrodes at aluminum gallium nitride barrier layer 7 two ends.On the semi-insulating type substrate 3 of gallium nitride, make surface acoustic wave interdigital transducer 11.Wherein, surface acoustic wave interdigital transducer 11 is made up of electrode 111 and finger 112.Resilient coating 2 improves the gallium nitride material quality in order to reduce by sapphire and the caused high defect concentration of gallium nitride lattice mismatch.Resilient coating 4 is in order to improve interface quality.Substrate material can also be selected carborundum, and resilient coating 2 materials can also be selected aluminium nitride.
As shown in Figure 4, aluminum gallium nitride barrier layer 5,7 and gallium nitride channel layer 4 form heterojunction structure at the interface, because the discontinuity that can be with is forming symmetrical quantum well structure at the interface, the triangular form potential-energy barrier is limited to two-dimensional electron gas in the raceway groove, forms the current transfer raceway groove.ACT specification requirement raceway groove can be limited to signal charge in the raceway groove, and single heterojunction ACT structure is suppressing the scarce capacity of electric charge to the diffusion of substrate direction.The gallium nitride double-heterostructure can each formation can be with potential barrier in both sides about the raceway groove, forms the quantum well structure of symmetry, better suppresses electric charge diffusion motion in vertical direction.Gallium nitride has excellent piezoelectric property, compares with GaAs, as long as less driving power just can obtain sufficiently high surface acoustic wave potential field.Therefore, compare with GaAs ACT technology, gallium nitride ACT The Application of Technology scope is more wide.The gallium nitride material of growing on the sapphire has bigger acoustic surface wave speed, is about 5000m/s, and piezoelectric commonly used is big more than 20%.Velocity of sound height means to have bigger wavelength under same frequency, thereby technology is simple relatively when making the high frequency interdigital transducer, realizes easily.The high velocity of sound makes gallium nitride be widely used in high-frequency element.The big of AlGaN/GaN heterojunction boundary place can make two-dimensional electron gas (2DEG) density improve an order of magnitude than GaAs matter knot two-dimensional electron gas density with strong polarization charge in band band rank.High two-dimensional electron gas density can improve the performance of device.
Claims (4)
1. double heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material, comprise substrate, it is characterized in that: described substrate is provided with first resilient coating, described first resilient coating is provided with the semi-insulating type substrate of gallium nitride, the semi-insulating type substrate of described gallium nitride is provided with second resilient coating, described second resilient coating is provided with the first aluminum gallium nitride barrier layer, the described first aluminum gallium nitride barrier layer is provided with gallium nitride layer, described gallium nitride layer is provided with the second aluminum gallium nitride barrier layer, the described first aluminum gallium nitride barrier layer, gallium nitride layer, four limits of the second aluminum gallium nitride barrier layer and second resilient coating are etched away to form ACT charge transport raceway groove, there is the metal pattern that can constitute surface acoustic wave interdigital transducer at the semi-insulating type substrate of described gallium nitride two ends, and there is electrode at the described second aluminum gallium nitride barrier layer two ends.
2. the double heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material according to claim 1 is characterized in that described first resilient coating is gallium nitride resilient coating or aluminum nitride buffer layer.
3. the double heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material according to claim 1 is characterized in that described second resilient coating is the gallium nitride resilient coating, and described gallium nitride resilient coating mixes for the p type.
4. the double heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material according to claim 1 is characterized in that described substrate is sapphire substrate or silicon carbide substrate.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205472646U CN201893341U (en) | 2010-09-29 | 2010-09-29 | Double-heterojunction acoustic charge transport delay line based on gallium nitride |
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| CN2010205472646U CN201893341U (en) | 2010-09-29 | 2010-09-29 | Double-heterojunction acoustic charge transport delay line based on gallium nitride |
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| CN201893341U true CN201893341U (en) | 2011-07-06 |
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| CN2010205472646U Expired - Lifetime CN201893341U (en) | 2010-09-29 | 2010-09-29 | Double-heterojunction acoustic charge transport delay line based on gallium nitride |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SUZHOU INNOTION TECHNOLOGY CO LTD Free format text: FORMER NAME: SUZHOU YINGNUOXUN TECHNOLOGY CO., LTD. |
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| CP01 | Change in the name or title of a patent holder |
Address after: Linquan street Suzhou City Industrial Park, 215123 No. 399 in Jiangsu Province Patentee after: Suzhou Innotion Technology Co Ltd Address before: Linquan street Suzhou City Industrial Park, 215123 No. 399 in Jiangsu Province Patentee before: Suzhou Yingnuoxun Technology Co., Ltd. |
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| CX01 | Expiry of patent term |
Granted publication date: 20110706 |
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| CX01 | Expiry of patent term |