CN102142452A - Single heterojunction acoustic charge transport delay line based on gallium nitride material - Google Patents

Single heterojunction acoustic charge transport delay line based on gallium nitride material Download PDF

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Publication number
CN102142452A
CN102142452A CN 201010296040 CN201010296040A CN102142452A CN 102142452 A CN102142452 A CN 102142452A CN 201010296040 CN201010296040 CN 201010296040 CN 201010296040 A CN201010296040 A CN 201010296040A CN 102142452 A CN102142452 A CN 102142452A
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China
Prior art keywords
gallium nitride
charge transport
delay line
line based
semi
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CN 201010296040
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Chinese (zh)
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高怀
张晓东
王晓彧
陈涛
薛川
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SUZHOU YINGNUOXUN TECHNOLOGY Co Ltd
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SUZHOU YINGNUOXUN TECHNOLOGY Co Ltd
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Abstract

The invention discloses a single heterojunction acoustic charge transport (ACT) delay line based on gallium nitride material. The single heterojunction acoustic charge transport (ACT) delay line based on gallium nitride material comprises a base piece and is characterized in that: a gallium nitride semi-insulating substrate is arranged on the base piece; a gallium nitride aluminum barrier layer is arranged on the gallium nitride semi-insulating substrate; two ends of the gallium nitride semi-insulating substrate are respectively provided with a metal pattern capable of forming a sound surface wave interdigital transducer; and two ends of the second gallium nitride aluminum barrier layer are respectively provided with an electrode. The gallium nitride has good piezoelectric performance, so the application range of the gallium nitride ACT technology can be expanded. The gallium nitride material on sapphire has higher sound surface wave speed, which contributes to high frequency application. The large energy band order and the strong polarization charge on the interface of the AlGaN/GaN heterojunction can produce a two-dimensional electronic gas with high surface density.

Description

A kind of single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material
Technical field
The present invention relates to a kind of Acoustic Charge transport devices (ACT, Acoustic Charge Transport), relate in particular to a kind of single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material.
Background technology
The ACT device is a kind of high-frequency high-speed analogue signal processor, is a kind of novel semi-conductor device that charge coupled device and SAW (Surface Acoustic Wave) device are combined, and can directly apply to RF application.It is a kind of complete programmable analog signal processor, does not need A/D and D/A converter, have that conversion speed is fast, reliability is high, low in energy consumption, size is little, advantage such as in light weight.Transversal filter, sef-adapting filter and the equalizer etc. that constitute with the ACT device have been widely used in military defense, the business system.
For the ACT device, choosing of material is of crucial importance, and direct relation the success or not of ACT device research.The selected semi-conducting material of ACT requirement on devices had both had suppresses electrical property to obtain higher surface acoustic wave electric potential field, requires it to possess high electron mobility to obtain high transfer efficiency simultaneously.The GaAs material has piezoelectric property and high electron mobility, meets the ACT specification requirement, is the ideal material of ACT technology always.But, GaAs material blemish in an otherwise perfect thing be its piezoelectric property a little less than, need bigger power could produce enough big surface acoustic wave electric potential field, and generally only be applied to arrowband ACT device, though utilize the piezoelectric membrane technology can obtain the bigger device of bandwidth ratio, but along with improving constantly of signal frequency, the distance between the surface acoustic wave interdigital transducer finger is more and more littler, and technology realizes relatively difficulty.This has limited the development of GaAs ACT technology to a certain extent.
Summary of the invention
The present invention seeks to: a kind of single heterojunction Acoustic Charge transport devices based on gallium nitride material is provided.Gallium nitride single heterojunction structure meets the requirement of ACT device channel, and gallium nitride has good piezoelectric property and high acoustic surface wave speed, can enlarge ACT The Application of Technology scope.
This technical scheme is: a kind of single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material, comprise substrate, it is characterized in that: described substrate is provided with the semi-insulating type substrate of gallium nitride, the semi-insulating type substrate of described gallium nitride is provided with the aluminum gallium nitride barrier layer, there is the metal pattern that can constitute surface acoustic wave interdigital transducer at the semi-insulating type substrate of described gallium nitride two ends, and there is electrode at described aluminum gallium nitride barrier layer two ends.
Further, between the semi-insulating type substrate of described substrate and gallium nitride first resilient coating is arranged.
Further, the semi-insulating type substrate thickness of described gallium nitride needs 〉=5 λ Saw, λ SawBe the surface acoustic wave wavelength.
Further, between semi-insulating type substrate of described gallium nitride and the aluminum gallium nitride barrier layer second resilient coating is arranged.
Further, four limits of the described aluminum gallium nitride barrier layer and second resilient coating are etched away to form ACT charge transport raceway groove.
Further, described first resilient coating is gallium nitride resilient coating or aluminum nitride buffer layer.
Further, described second resilient coating is the gallium nitride resilient coating.
Further, described substrate is a sapphire substrate, and wherein transverse axis is E/Ev, and the longitudinal axis is nm.
Operation principle: in order to realize high charge transport efficient, ACT technology raceway groove must satisfy following 3 conditions: the first,
In order to ensure the high efficient that transports, the capable ripple electric potential field that the surface acoustic wave that must guarantee to be excited by interdigital transducer produces in communication process can not fallen by the electric field shielding that free charge in the semiconductor layer is created.The second, the charge carrier in conductive layer, barrier layer or the semiconductor that raceway groove is wanted to suppress contiguous escapes in the raceway groove.The 3rd, raceway groove can be limited to signal charge in the raceway groove, eliminates other the current pathway except that raceway groove.
Free charge in the semiconductor layer masks the capable ripple electric potential field that surface acoustic wave forms, and can adopt etching usually, protonation or be biased this three kinds of ways outward.These three kinds of ways respectively have pluses and minuses, and etching is held the very easy surface irregularity that makes, and is unfavorable for frequency applications; Protonation can only be applied to the thin epitaxy layer, and adopts the method for protonation to be easy to destroy crystal structure, is unfavorable for SAW propagating; Adopt this way of applying bias need consider factors such as semiconductor characteristics, doping, comparatively complicated.The gallium nitride single heterojunction structure ACT that is adopted among the present invention, the very approaching surface of raceway groove far is shallower than traditional buried layer ACT raceway groove position (approximately half wavelength).Sign in this, the method that the present invention adopts etching etches away the two ends, the left and right sides of the aluminum gallium nitride barrier layer and second resilient coating, surface acoustic wave interdigital transducer directly is made on the semi-insulating type substrate of gallium nitride, eliminates the influence of free charge the shielding of row ripple electric potential field.
Disturb the signal charge that is bound by in the potential energy well in the raceway groove for the charge carrier in the conductive layer, barrier layer or the semiconductor that suppress vicinity escapes into, have following three kinds of methods to consider: 1, make guard ring.2, adopt the method for etching.3, ion is carried out in outer other zone of raceway groove and inject the destruction lattice structure.Make guard ring and can cause the RF feedback problem.Because etching and ion injection method can be applied to heterojunction structure, among the present invention, adopt the method for etching, the both sides up and down (overlooking) of the aluminum gallium nitride barrier layer and second resilient coating are etched away, with formation ACT charge transport raceway groove.
Traditional method is to adopt simple p-n-p structure to form the p type semiconductor layer that exhausts signal charge is suppressed in raceway groove.But for gallium nitride, this method but is not easy to realize.Because gallium nitride is carried out relatively difficulty of p type doping, be difficult to realize, therefore, adopt the mode of single heterojunction among the present invention.Since the heterojunction boundary place can with discontinuity, form the triangular form potential energy well at the heterojunction boundary place.The potential energy well that produces can limit electric charge diffusion in vertical direction, and signal charge is limited near the heterojunction boundary the raceway groove.
Advantage of the present invention is:
1. gallium nitride has excellent piezoelectric property, can enlarge the range of application of gallium nitride ACT.
2. gallium nitride material has bigger acoustic surface wave speed on the sapphire, helps frequency applications.
3.AlGaN/GaN the big of heterojunction boundary place can produce the high areal density two-dimensional electron gas with strong polarization charge in band band rank.
Description of drawings
Below in conjunction with drawings and Examples the present invention is further described:
Fig. 1 is the single heterojunction Acoustic Charge Transport Delay Line cross-sectional view based on gallium nitride material of the present invention.
Fig. 2 is the single heterojunction Acoustic Charge Transport Delay Line vertical view based on gallium nitride material of the present invention.
Fig. 3 is the surface acoustic wave interdigital transducer figure of the single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material of the present invention.
Fig. 4 is the single heterojunction interface conduction band diagram based on gallium nitride material of the present invention.
Embodiment
Embodiment: as shown in Figure 1, 2, 3: extension gallium nitride resilient coating 2 on sapphire substrate 1, the semi-insulating type substrate 3 of extension gallium nitride on the gallium nitride resilient coating 2.Epitaxial buffer layer 4 on the semi-insulating type substrate 3 of gallium nitride, extension aluminum gallium nitride barrier layer 5 on the resilient coating 4.Resilient coating 4 and aluminum gallium nitride barrier layer 5 four limits are etched away, and have formed ACT charge transport channel structure 8.There are input 6 and output 7 Ohmic electrodes in aluminum gallium nitride barrier layer 5 two ends.On the semi-insulating type substrate 3 of gallium nitride, make surface acoustic wave interdigital transducer 9.Wherein, surface acoustic wave transducer 9 is made up of electrode 91 and finger 92.The semi-insulating type substrate thickness of gallium nitride needs 〉=5 λ Saw, λ SawBe the surface acoustic wave wavelength.Resilient coating 2 improves the gallium nitride material quality in order to reduce by sapphire and the caused high defect concentration of gallium nitride lattice mismatch.Resilient coating 4 is in order to improve interface quality.Substrate material can also be selected carborundum, and resilient coating 2 materials can also be selected aluminium nitride.Resilient coating 4 materials are gallium nitride.
As shown in Figure 4, aluminum gallium nitride barrier layer 5 forms heterojunction structure at the interface with gallium nitride resilient coating 4, because the discontinuity that can be with is forming the triangular form potential-energy barrier at the interface, the triangular form potential-energy barrier is limited to two-dimensional electron gas in the raceway groove, forms the charge transport raceway groove.Gallium nitride has excellent piezoelectric property, compares with GaAs, as long as less driving power just can obtain sufficiently high surface acoustic wave potential field.Therefore, compare with GaAs ACT technology, gallium nitride ACT The Application of Technology scope is more wide.The gallium nitride material of growing on the sapphire has bigger acoustic surface wave speed, is about 5000m/s, and piezoelectric commonly used is big more than 20%.Velocity of sound height means to have bigger wavelength under same frequency, thereby technology is simple relatively when making the high frequency interdigital transducer, realizes easily.The high velocity of sound makes gallium nitride be widely used in high-frequency element.The big of AlGaN/GaN heterojunction boundary place can make two-dimensional electron gas (2DEG) density improve an order of magnitude than the two-dimentional electron density heterojunction of GaAs with strong polarization charge in band band rank.High two-dimensional electron gas density can improve the performance of device.

Claims (8)

1. single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material, comprise substrate, it is characterized in that: described substrate is provided with the semi-insulating type substrate of gallium nitride, the semi-insulating type substrate of described gallium nitride is provided with the aluminum gallium nitride barrier layer, there is the metal pattern that can constitute surface acoustic wave interdigital transducer at the semi-insulating type substrate of described gallium nitride two ends, and there is electrode at described aluminum gallium nitride barrier layer two ends.
2. the single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material according to claim 1 is characterized in that, between the semi-insulating type substrate of described substrate and gallium nitride first resilient coating is arranged.
3. the single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material according to claim 1 is characterized in that, between semi-insulating type substrate of described gallium nitride and the aluminum gallium nitride barrier layer second resilient coating is arranged.
4. the single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material according to claim 1 is characterized in that, the semi-insulating type substrate thickness of described gallium nitride needs 〉=5 λ Saw, λ SawBe the surface acoustic wave wavelength.
5. the single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material according to claim 3 is characterized in that, four limits of the described aluminum gallium nitride barrier layer and second resilient coating are etched away to form ACT charge transport raceway groove.
6. the single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material according to claim 2 is characterized in that described first resilient coating is gallium nitride resilient coating or aluminum nitride buffer layer.
7. the single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material according to claim 3 is characterized in that described second resilient coating is the gallium nitride resilient coating.
8. according to the described single heterojunction Acoustic Charge Transport Delay Line of claim, it is characterized in that described substrate is a sapphire substrate based on gallium nitride material.
CN 201010296040 2010-09-29 2010-09-29 Single heterojunction acoustic charge transport delay line based on gallium nitride material Pending CN102142452A (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020052076A1 (en) * 2000-09-27 2002-05-02 Khan Muhammad Asif Metal oxide semiconductor heterostructure field effect transistor
CN1633715A (en) * 2001-07-25 2005-06-29 飞思卡尔半导体公司 Monolithic semiconductor-piezoelectric and electro-acoustic charge transport devices
US20060065929A1 (en) * 2004-09-24 2006-03-30 Samsung Electro-Mechanics Co., Ltd. Nitride based semiconductor device and method for manufacturing the same
CN1757161A (en) * 2003-03-03 2006-04-05 克里公司 Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
CN1957474A (en) * 2004-01-23 2007-05-02 国际整流器公司 III-nitride current control device and method of manufacture
CN201918388U (en) * 2010-09-29 2011-08-03 苏州英诺迅科技有限公司 Single hetero-junction charge transportation delay line based on gallium nitride (GaN) material

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020052076A1 (en) * 2000-09-27 2002-05-02 Khan Muhammad Asif Metal oxide semiconductor heterostructure field effect transistor
CN1633715A (en) * 2001-07-25 2005-06-29 飞思卡尔半导体公司 Monolithic semiconductor-piezoelectric and electro-acoustic charge transport devices
CN1757161A (en) * 2003-03-03 2006-04-05 克里公司 Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
CN1957474A (en) * 2004-01-23 2007-05-02 国际整流器公司 III-nitride current control device and method of manufacture
US20060065929A1 (en) * 2004-09-24 2006-03-30 Samsung Electro-Mechanics Co., Ltd. Nitride based semiconductor device and method for manufacturing the same
CN201918388U (en) * 2010-09-29 2011-08-03 苏州英诺迅科技有限公司 Single hetero-junction charge transportation delay line based on gallium nitride (GaN) material

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Application publication date: 20110803