CN109856820A - A kind of on piece THz wave amplitude modulator based on fin line nesting artificial micro-structure - Google Patents
A kind of on piece THz wave amplitude modulator based on fin line nesting artificial micro-structure Download PDFInfo
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- CN109856820A CN109856820A CN201910229888.9A CN201910229888A CN109856820A CN 109856820 A CN109856820 A CN 109856820A CN 201910229888 A CN201910229888 A CN 201910229888A CN 109856820 A CN109856820 A CN 109856820A
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Abstract
The invention discloses a kind of on piece THz wave amplitude modulators based on fin line nesting artificial micro-structure, belong to function solenoid device arts.The present invention includes rectangular waveguide, fin line, external bias filter circuit, first medium substrate and second medium substrate；It is connected between the input terminal and output end of rectangular waveguide by fin line, fin line includes waveguide-fin-line transition part, intermediate conveyor area and fin line-waveguide transition part；Fin line modulating part is located at intermediate conveyor area, including two modulation units, and modulation unit includes artificial micro-structure and HEMT diode；External bias filter circuit includes filter input, compact micro-band resonance unit and filtering output end, and filtering output end is connect by bonding line with fin line.While the present invention possesses big modulation bandwidth and modulation depth, it is operable under room temperature, normal pressure, non-vacuum condition, therefore modulator of the present invention has good actual application prospect.
Description
Technical field
The invention belongs to function solenoid device arts, and in particular to a kind of piece based on fin line nesting artificial micro-structure
Upper THz wave amplitude modulator.
Background technique
Nowadays THz wave dynamic function device becomes Terahertz section as one of core technology in Terahertz communication system
Learn the emphasis of technical field of research.Compared with microwave, the frequency of THz wave is higher, therefore when as communications carrier, unit
More information can be carried in time, and since the wavelength of THz wave is shorter, its transmitting directivity is better than microwave.
The research boom of a Terahertz science and technology is formd in worldwide at present.Since 2004,
The world such as Nature/Science top publication of natural science has published the article of more terahertz wave modulators successively, for adjusting
The design of the modulation function of device processed is generally based on semiconductor material to carry out, because semiconductor material conductivity swashs to additional
The variables such as light, electric field, temperature are more sensitive, can influence relevant frequency by the conductivity that these modes change a certain position
Rate, amplitude, phase reach the function of modulation.
Electronics and information industry is current key pillars of the national economy, and microelectric technique is the important of electronics and information industry
Basis.It has taken gallium nitride (GaN) and silicon carbide (SiC) as the third generation wide bandgap semiconductor material of representative since the phase at the end of the 20th century
Material is because having the characteristics that broad stopband, high-breakdown-voltage, high electron saturation velocities, radiation resistance, in communication, radar, aviation, Internet of Things
The equal military domains such as civil fields and space flight, electronics have broad application prospects.Broad stopband microwave semiconductor at present
Device mainly has SiC device and GaN device.Later with the breakthrough of heterogeneous epitaxial technology, GaN HEMT device achieves prominent fly
The development pushed ahead vigorously.GaN HEMT device not only has the advantage of GaN material inherent characteristic, it is often more important that A1GaN/GaN is heterogeneous
It ties since the high concentration two-dimensional electron gas (2-DEG) that piezoelectricity and spontaneous polarization is formed has been obviously improved electrons transport property,
Electron mobility is more than 2000cm2/Vs.Therefore GaN HEMT device has higher radio-frequency power fan-out capability.GaN
The above advantage that HEMT device has, plays a very important role it in solid-state devices of new generation.
Meta Materials (Metamaterials) are a kind of the artificial multiple of the extraordinary physical property not having with natural medium
Close structure or Composite Media, these Meta Materials usually from structure rather than constituent obtains extraordinary attribute.Due to Meta Materials
Working frequency is related to structure design, can easily adjust the working frequency of Meta Materials.People are by designing different sizes
Metamaterial structure, it is artificial to control extraneous factor variation and then THz wave transmission is regulated and controled in conjunction with novel materials, pass through
It is combined based on HEMT structure and artificial metamaterial structure, the Terahertz modulator of automatically controlled effective high speed can be prepared, it is right
There is very big application potential in Terahertz wireless communication.
Summary of the invention
The object of the present invention is to provide a kind of on piece THz wave amplitude modulator based on fin line nesting artificial micro-structure,
It is realized by the electromagnetic property that making alive controls HEMT diode to EMR electromagnetic resonance mode in artificial electromagnetic resonant element structure
Control, to carry out amplitude modulation to the THz wave propagated in fin line-waveguide.
Technical problem proposed by the invention solves in this way:
A kind of on piece THz wave amplitude modulator based on fin line nesting artificial micro-structure, including rectangular waveguide, fin line,
External bias filter circuit 5, first medium substrate and second medium substrate；First medium substrate and second medium substrate up and down
Surface is plated with metal layer, the identical and T-shaped connection with second medium substrate level position of first medium substrate；First medium base
The width of plate is greater than the width of rectangular waveguide, and first medium substrate runs through rectangular waveguide cavity wall and is placed on the length of rectangular waveguide
Side (face E)；
It is connected between the input terminal 1 and output end 4 of rectangular waveguide by fin line, fin line etches the upper table in first medium substrate
Face；Side in the middle part of fin line is etched with two gaps vertical with fin line, forms rectangular metal coat (key among two gaps
Close area)；Fin line includes waveguide-fin-line transition part 2, intermediate conveyor area and fin line-waveguide transition part；Fin line modulating part 3
Positioned at intermediate conveyor area, including two modulation units, modulation unit includes artificial micro-structure 6 and HEMT diode 7；Artificial micro- knot
Structure 6 is I-shaped resonant element, and HEMT diode 7 is located at the middle part of the longitudinal metal bar of I-shaped resonant element；HEMT
Diode 7 includes two electrodes 8 and doping hetero-junctions 9, and doping hetero-junctions 9 passes through two electrodes 8 and I-shaped resonant element
Longitudinal metal bar be connected；The two sections of the longitudinal metal bar of adjacent I-shaped resonant element pass through two metals respectively
Line connection, two wires are saved by brachyplast respectively to be connected with the two sides of fin line, wherein a wires are grounded, another metal
Line connects rectangular metal coat；
Rectangular waveguide is provided with rectangular air window, rectangular air window in the junction of first medium substrate and second medium substrate
Width >=external bias filter circuit 5 width；External bias filter circuit 5 is etched in the upper surface of second medium substrate；
External bias filter circuit includes filter input, compact micro-band resonance unit (Compact Microstrip
Resonanting Cell, CMRC) and filtering output end；Filter input and filtering output end are microstrip line；Filtering output end
Width and rectangular metal coat it is of same size；Filtering output end is connect by bonding line with rectangular metal coat.
The upper surface of first medium substrate is overlapped with the middle part of the long side (face E) of rectangular waveguide.
Waveguide-fin-line transition part 2 upper edge extends to fin line by the broadside upper edge curve of rectangular waveguide input terminal 1
The upper edge of modulating part, waveguide-fin-line transition part 2 lower edge by rectangular waveguide input terminal 1 broadside lower edge curve
Extend to the lower edge of fin line modulating part.
The selection of first medium substrate is SiC or sapphire.
The selection of second medium substrate is SiO2。
Adulterate hetero-junctions 9 material be AlGaN/GaN, InGaN/GaN, AlGaAs/GaAs, AlGaAs/InGaAs or
AlGaAs/InGaAs/InP, oblique line indicate the combination of two or three of material.
The material of electrode 8 is Ti, Al, Ni or Au.
The material of artificial micro-structure 6 and metal wire is Au, Ag, Cu or Al.
The size of rectangular waveguide is WR2.8, specific size 0.356mm*0.711mm.
The connection or off-state of HEMT diode are controlled by external bias filter circuit on-load voltage signal, and then are controlled
The resonant state of artificial micro-structure processed is realized and is modulated to the amplitude of the THz wave of rectangular waveguide internal transmission.
The beneficial effects of the present invention are:
The present invention quickly controls artificial electromagnetic using the high electron mobility characteristic of two-dimensional electron gas in HEMT diode
The resonance characteristic of medium, to realize the fast modulation to THz wave.Pass through the ingehious design to resonance structure and make its with
Transistor organically combines, and the structure have very strong plasticity: by change resonant element parameter (such as
The transverse bar of " work " word and the length of longitudinal rod) it can effectively adjust the size of modulation bandwidth and the position of modulation band.This
It is a kind of two-dimension plane structure that invention, which designs the modulation unit to be formed using Metamaterials, can pass through microfabrication means
It realizes, technical maturity is easy to make, and avoids the highly difficult processing of design scheme bring of complicated stereochemical structure.It is big possessing
Modulation bandwidth and while modulation depth, which is operable under room temperature, normal pressure, non-vacuum condition, these make this
Modulator has good actual application prospect.
Detailed description of the invention
Fig. 1 is the overall structure diagram of THz wave amplitude modulator of the present invention；
Fig. 2 is the structural schematic diagram of fin line in the present invention；
Fig. 3 is modulation unit structural schematic diagram in the present invention；
Fig. 4 is external bias filter circuit construction schematic diagrame in the present invention；
Fig. 5 is (HEMT connection) fin line transmission state schematic diagram when being not powered on pressure in modulator described in embodiment；
Fig. 6 is described in embodiment in modulator, (HEMT truncation) transmission curve analogous diagram when making alive；
Fig. 7 is (HEMT connection) transmission curve analogous diagram when being not powered on pressure in modulator described in embodiment；
Fig. 8 is described in embodiment in modulator, (HEMT truncation) transmission curve analogous diagram when making alive.
Specific embodiment
The present invention is further detailed with reference to the accompanying drawings and examples.
The present embodiment provides a kind of on piece THz wave amplitude modulator based on fin line nesting artificial micro-structure, entirety
Structural schematic diagram is as shown in Figure 1, include rectangular waveguide, fin line, external bias filter circuit 5, first medium substrate and second Jie
Matter substrate；The size of rectangular waveguide is WR2.8, specific size 0.356mm*0.711mm；First medium substrate and second medium
The upper and lower surface of substrate is plated with metal layer, the identical and T-shaped connection with second medium substrate level position of first medium substrate；
The selection of first medium substrate is SiC, and the selection of second medium substrate is SiO2；The width of first medium substrate is greater than rectangular wave
The width led, first medium substrate run through rectangular waveguide cavity wall and are placed on the long side (face E) of rectangular waveguide；First medium base
The upper surface of plate is overlapped with the middle part of the long side (face E) of rectangular waveguide；
It is connected between the input terminal 1 and output end 4 of rectangular waveguide by fin line, fin line etches the upper table in first medium substrate
Face (part for having the coat of metal remaining at this time is ground connection fin)；Fin line is symmetrical about vertical central axes, and structural schematic diagram is such as
Shown in Fig. 2, the side in the middle part of fin line is etched with two gaps vertical with fin line, and the width in gap is 15 μm, in two gaps
Between formed rectangular metal coat (bonding region)；Fin line includes waveguide-fin-line transition part 2, intermediate conveyor area and fin line-waveguide
Transition portion；Fin line modulating part 3 is located at intermediate conveyor area, including two modulation units, structural schematic diagram as shown in figure 3,
Modulation unit includes artificial micro-structure 6 and HEMT diode 7；Artificial micro-structure 6 is I-shaped resonant element, HEMT diode
7 are located at the middle part of the longitudinal metal bar of I-shaped resonant element；HEMT diode 7 includes two electrodes 8 and doping hetero-junctions
9, doping hetero-junctions 9 is connected by two electrodes 8 with the longitudinal metal bar of I-shaped resonant element, and electrode is about 10 μm；Phase
The two sections of the longitudinal metal bar of adjacent I-shaped resonant element pass through the connection of two wires, two wires point respectively
Do not saved by brachyplast and be connected with the two sides of fin line, about 40 μm of the distance between metal wire and electrode, wherein a wires and
It is grounded fin to be connected, be grounded by rectangular waveguide cavity wall, another wires connect rectangular metal coat (bonding region)；Two
Metal line is symmetrical about the horizontal median axis in intermediate conveyor area；
Rectangular waveguide is provided with rectangular air window, rectangular air window in the junction of first medium substrate and second medium substrate
Width >=external bias filter circuit 5 width；External bias filter circuit 5 is etched in the upper surface of second medium substrate,
Its structural schematic diagram is as shown in Figure 4；External bias filter circuit includes sequentially connected filter input, compact micro-band resonance
Unit (CMRC, Compact Microstrip Resonanting Cell) and filtering output end；Filter input and filtering are defeated
Outlet is microstrip line；The width of filtering output end is of same size with rectangular metal coat；Filtering output end passes through bonding line
It is connect with rectangular metal coat.
The working mechanism of the modulator is the concentration that the two-dimensional electron gas in HEMT diode is controlled by applied voltage,
And then the resonant state of artificial micro-structure is controlled, to control the on-off characteristic of fin line hop.Specific modulated process
Are as follows: cathode (Ohmic contact) is connected with fin line side by grounded metal line and is grounded by cavity wall in modulator, and anode
(Schottky contacts) pass through external biasing filter circuit on-load voltage.
When generating positive and negative voltage difference is 0V, HEMT diode is in the conductive state, and " work " word structure passes through bis- pole HEMT
Pipe connection becomes whole, and resonator is in running order at this time, and the resonance frequency of this structure is 0.34THz, can from Fig. 5 and Fig. 7
Know, this resonance can block the transmission of THz wave, so the THz wave of the frequency can not be transmitted by fin line at this time.When
Two dimension electricity when positive and negative voltage difference is 4~10V, during applied voltage difference is become larger by zero, in HEMT diode
Sub- gas concentration is gradually reduced, until the two-dimensional electron gas in HEMT diode is depleted, HEMT diode becomes pinch off state, this
When " work " word resonator electrode between in disconnect state, from Fig. 6 and Fig. 8 it is found that resonator is in off working state, this
When 0.34THz THz wave output waveguide can be transmitted to by fin line.
Modulator described in the present embodiment can realize 95% or more modulation depth and the transmission bandwidth of 20GHz, while to too
The Insertion Loss of Hertz wave is smaller than within -1.0B.
Claims (10)
1. a kind of on piece THz wave amplitude modulator based on fin line nesting artificial micro-structure, which is characterized in that including rectangle
Waveguide, fin line, external bias filter circuit (5), first medium substrate and second medium substrate；First medium substrate and second is situated between
The upper and lower surface of matter substrate is plated with metal layer, first medium substrate identical and T-shaped company with second medium substrate level position
It connects；The width of first medium substrate is greater than the width of rectangular waveguide, and first medium substrate is through rectangular waveguide cavity wall and places
In the long side of rectangular waveguide；
It is connect between the input terminal (1) of rectangular waveguide and output end (4) by fin line, fin line etches the upper table in first medium substrate
Face；Side in the middle part of fin line is etched with two gaps vertical with fin line, forms rectangular metal coat among two gaps；Fin
Line includes waveguide-fin-line transition part (2), intermediate conveyor area and fin line-waveguide transition part；Fin line modulating part (3) is located at
Intermediate conveyor area, including two modulation units, modulation unit include artificial micro-structure (6) and HEMT diode (7)；Artificial micro- knot
Structure (6) is I-shaped resonant element, and HEMT diode (7) is located at the middle part of the longitudinal metal bar of I-shaped resonant element；
HEMT diode (7) includes two electrodes (8) and doping hetero-junctions (9), doping hetero-junctions (9) by two electrodes (8) and
The longitudinal metal bar of I-shaped resonant element is connected；The two sections of the longitudinal metal bar of adjacent I-shaped resonant element
It is connected respectively by two wires, two wires are saved by brachyplast respectively to be connected with the two sides of fin line, wherein a metal
Line ground connection, another wires connect rectangular metal coat；
Rectangular waveguide is provided with rectangular air window, the width of rectangular air window in the junction of first medium substrate and second medium substrate
Degree >=external bias filter circuit (5) width；External bias filter circuit (5) is etched in the upper surface of second medium substrate；
External bias filter circuit includes filter input, compact micro-band resonance unit and filtering output end；Filter input and filter
Wave output terminal is microstrip line；The width of filtering output end is of same size with rectangular metal coat；Filtering output end passes through key
Zygonema is connect with rectangular metal coat.
2. the on piece THz wave amplitude modulator according to claim 1 based on fin line nesting artificial micro-structure, special
Sign is that the middle part of the long side of the upper surface and rectangular waveguide of first medium substrate is overlapped.
3. the on piece THz wave amplitude modulator according to claim 1 based on fin line nesting artificial micro-structure, special
Sign is that waveguide-fin-line transition part (2) upper edge is extended to by the broadside upper edge curve of rectangular waveguide input terminal (1)
The upper edge of fin line modulating part, under broadside of waveguide-fin-line transition part (2) lower edge by rectangular waveguide input terminal (1)
Edge curve extends to the lower edge of fin line modulating part.
4. the on piece THz wave amplitude modulator according to claim 1 based on fin line nesting artificial micro-structure, special
Sign is that the selection of first medium substrate is SiC or sapphire.
5. the on piece THz wave amplitude modulator according to claim 1 based on fin line nesting artificial micro-structure, special
Sign is that the selection of second medium substrate is SiO2。
6. the on piece THz wave amplitude modulator according to claim 1 based on fin line nesting artificial micro-structure, special
Sign is, the material of doping hetero-junctions (9) be AlGaN/GaN, InGaN/GaN, AlGaAs/GaAs, AlGaAs/InGaAs or
AlGaAs/InGaAs/InP, oblique line indicate the combination of two or three of material.
7. the on piece THz wave amplitude modulator according to claim 1 based on fin line nesting artificial micro-structure, special
Sign is that the material of electrode (8) is Ti, Al, Ni or Au.
8. the on piece THz wave amplitude modulator according to claim 1 based on fin line nesting artificial micro-structure, special
Sign is that the material of artificial micro-structure (6) and metal wire is Au, Ag, Cu or Al.
9. the on piece THz wave amplitude modulator according to claim 1 based on fin line nesting artificial micro-structure, special
Sign is that the size of rectangular waveguide is WR2.8, specific size 0.356mm*0.711mm.
10. the on piece THz wave amplitude modulator according to claim 1 based on fin line nesting artificial micro-structure, special
Sign is, the connection or off-state of HEMT diode is controlled by external bias filter circuit on-load voltage signal, and then control
The resonant state of artificial micro-structure processed is realized and is modulated to the amplitude of the THz wave of rectangular waveguide internal transmission.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110535007A (en) * | 2019-09-06 | 2019-12-03 | 电子科技大学 | The on piece THz wave amplitude modulator of fin line load resonant element nesting diode |
| CN114122727A (en) * | 2021-12-03 | 2022-03-01 | 电子科技大学长三角研究院(湖州) | Terahertz amplitude modulator utilizing reverse phase interference principle |
| CN115548616A (en) * | 2022-12-01 | 2022-12-30 | 四川太赫兹通信有限公司 | Structural element, structural system and circuit system of terahertz circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346406A (en) * | 2013-05-20 | 2013-10-09 | 电子科技大学 | High electron mobility transistor-based terahertz wave spatial external modulator |
| CN205081205U (en) * | 2015-10-18 | 2016-03-09 | 中国电子科技集团公司第十研究所 | Terahertz frequency band plane interconnection guided wave |
| CN107102453A (en) * | 2017-07-05 | 2017-08-29 | 电子科技大学 | A kind of fin line loads the THz wave fast modulator of HEMT nested structures |
-
2019
- 2019-03-25 CN CN201910229888.9A patent/CN109856820B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346406A (en) * | 2013-05-20 | 2013-10-09 | 电子科技大学 | High electron mobility transistor-based terahertz wave spatial external modulator |
| CN205081205U (en) * | 2015-10-18 | 2016-03-09 | 中国电子科技集团公司第十研究所 | Terahertz frequency band plane interconnection guided wave |
| CN107102453A (en) * | 2017-07-05 | 2017-08-29 | 电子科技大学 | A kind of fin line loads the THz wave fast modulator of HEMT nested structures |
Non-Patent Citations (2)
| Title |
|---|
| SHEN QIAO ET AL: "Gbps THz External Modulator based on High Electron Mobility Transistors-metamaterials", 《IEEE》 * |
| ZHEN ZHOU ET AL: "High performance metamaterials-high electron mobility transistors integrated terahertz modulator", 《OPTICS EXPRESS》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110535007A (en) * | 2019-09-06 | 2019-12-03 | 电子科技大学 | The on piece THz wave amplitude modulator of fin line load resonant element nesting diode |
| CN110535007B (en) * | 2019-09-06 | 2021-02-05 | 电子科技大学 | On-chip terahertz wave amplitude modulator with fin line loaded resonant unit nested diodes |
| CN114122727A (en) * | 2021-12-03 | 2022-03-01 | 电子科技大学长三角研究院(湖州) | Terahertz amplitude modulator utilizing reverse phase interference principle |
| CN115548616A (en) * | 2022-12-01 | 2022-12-30 | 四川太赫兹通信有限公司 | Structural element, structural system and circuit system of terahertz circuit |
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