CN201918388U - Single hetero-junction charge transportation delay line based on gallium nitride (GaN) material - Google Patents
Single hetero-junction charge transportation delay line based on gallium nitride (GaN) material Download PDFInfo
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- CN201918388U CN201918388U CN2010205472576U CN201020547257U CN201918388U CN 201918388 U CN201918388 U CN 201918388U CN 2010205472576 U CN2010205472576 U CN 2010205472576U CN 201020547257 U CN201020547257 U CN 201020547257U CN 201918388 U CN201918388 U CN 201918388U
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Abstract
The utility model discloses a single hetero-junction charge transportation delay line based on a gallium nitride (GaN) material. The delay line comprises a base plate. The single hetero-junction charge transportation delay line is characterized in that a semi-insulation type GaN substrate is arranged on the base plate, an aluminum gallium nitride (AlGaN) barrier layer is arranged on the semi-insulation type GaN substrate, the two ends of the semi-insulation type GaN substrate are provided with metal patterns which form a surface acoustic wave interdigital transducer, and the two ends of the AlGaN barrier layer are provided with electrodes. The GaN has outstanding piezoelectric property, therefore, the application range of the GaN ACT can be expanded. The GaN material on saphire has higher surface acoustic wave speed, so as to be beneficial for application at high frequency. Band offsets of a big energy band and strong polarization charges at the interface of the AlGaN/GaN hetero-junction can generate two-dimensioned high surface-density electron gas.
Description
Technical field
The utility model relates to a kind of Acoustic Charge transport devices (ACT, Acoustic Charge Transport), relates in particular to a kind of single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material.
Background technology
The ACT device is a kind of high-frequency high-speed analogue signal processor, is a kind of novel semi-conductor device that charge coupled device and SAW (Surface Acoustic Wave) device are combined, and can directly apply to RF application.It is a kind of complete programmable analog signal processor, does not need A/D and D/A converter, have that conversion speed is fast, reliability is high, low in energy consumption, size is little, advantage such as in light weight.Transversal filter, sef-adapting filter and the equalizer etc. that constitute with the ACT device have been widely used in military defense, the business system.
For the ACT device, choosing of material is of crucial importance, and direct relation the success or not of ACT device research.The selected semi-conducting material of ACT requirement on devices had both had suppresses electrical property to obtain higher surface acoustic wave electric potential field, requires it to possess high electron mobility to obtain high transfer efficiency simultaneously.The GaAs material has piezoelectric property and high electron mobility, meets the ACT specification requirement, is the ideal material of ACT technology always.But, GaAs material blemish in an otherwise perfect thing be its piezoelectric property a little less than, need bigger power could produce enough big surface acoustic wave electric potential field, and generally only be applied to arrowband ACT device, though utilize the piezoelectric membrane technology can obtain the bigger device of bandwidth ratio, but along with improving constantly of signal frequency, the distance between the surface acoustic wave interdigital transducer finger is more and more littler, and technology realizes relatively difficulty.This has limited the development of GaAs ACT technology to a certain extent.
The utility model content
The utility model purpose is: a kind of single heterojunction Acoustic Charge transport devices based on gallium nitride material is provided.Gallium nitride single heterojunction structure meets the requirement of ACT device channel, and gallium nitride has good piezoelectric property and high acoustic surface wave speed, can enlarge ACT The Application of Technology scope.
The technical solution of the utility model is: a kind of single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material, comprise substrate, it is characterized in that: described substrate is provided with the semi-insulating type substrate of gallium nitride, the semi-insulating type substrate of described gallium nitride is provided with the aluminum gallium nitride barrier layer, there is the metal pattern that can constitute surface acoustic wave interdigital transducer at the semi-insulating type substrate of described gallium nitride two ends, and there is electrode at described aluminum gallium nitride barrier layer two ends.
Further, between the semi-insulating type substrate of described substrate and gallium nitride first resilient coating is arranged.
Further, the semi-insulating type substrate thickness of described gallium nitride needs 〉=5 λ
Saw, λ
SawBe the surface acoustic wave wavelength.
Further, between semi-insulating type substrate of described gallium nitride and the aluminum gallium nitride barrier layer second resilient coating is arranged.
Further, four limits of the described aluminum gallium nitride barrier layer and second resilient coating are etched away to form ACT charge transport raceway groove.
Further, described first resilient coating is gallium nitride resilient coating or aluminum nitride buffer layer.
Further, described second resilient coating is the gallium nitride resilient coating.
Further, described substrate is a sapphire substrate, and wherein transverse axis is E/Ev, and the longitudinal axis is nm.
Operation principle: in order to realize high charge transport efficient, ACT technology raceway groove must satisfy following 3 conditions: first, in order to ensure the high efficient that transports, the capable ripple electric potential field that the surface acoustic wave that must guarantee to be excited by interdigital transducer produces in communication process can not fallen by the electric field shielding that free charge in the semiconductor layer is created.The second, the charge carrier in conductive layer, barrier layer or the semiconductor that raceway groove is wanted to suppress contiguous escapes in the raceway groove.The 3rd, raceway groove can be limited to signal charge in the raceway groove, eliminates other the current pathway except that raceway groove.
Free charge in the semiconductor layer masks the capable ripple electric potential field that surface acoustic wave forms, and can adopt etching usually, protonation or be biased this three kinds of ways outward.These three kinds of ways respectively have pluses and minuses, and etching is held the very easy surface irregularity that makes, and is unfavorable for frequency applications; Protonation can only be applied to the thin epitaxy layer, and adopts the method for protonation to be easy to destroy crystal structure, is unfavorable for SAW propagating; Adopt this way of applying bias need consider factors such as semiconductor characteristics, doping, comparatively complicated.The gallium nitride single heterojunction structure ACT that is adopted among the present invention, the very approaching surface of raceway groove far is shallower than traditional buried layer ACT raceway groove position (approximately half wavelength).Sign in this, the method of the utility model employing etching etches away the two ends, the left and right sides of the aluminum gallium nitride barrier layer and second resilient coating, surface acoustic wave interdigital transducer directly is made on the semi-insulating type substrate of gallium nitride, eliminates the influence of free charge the shielding of row ripple electric potential field.
Disturb the signal charge that is bound by in the potential energy well in the raceway groove for the charge carrier in the conductive layer, barrier layer or the semiconductor that suppress vicinity escapes into, have following three kinds of methods to consider: 1, make guard ring.2, adopt the method for etching.3, ion is carried out in outer other zone of raceway groove and inject the destruction lattice structure.Make guard ring and can cause the RF feedback problem.Because etching and ion injection method can be applied to heterojunction structure, in the utility model, adopt the method for etching, the both sides up and down (overlooking) of the aluminum gallium nitride barrier layer and second resilient coating are etched away, with formation ACT charge transport raceway groove.
Traditional method is to adopt simple p-n-p structure to form the p type semiconductor layer that exhausts signal charge is suppressed in raceway groove.But for gallium nitride, this method but is not easy to realize.Because gallium nitride is carried out relatively difficulty of p type doping, be difficult to realize, therefore, adopt the mode of single heterojunction in the utility model.Since the heterojunction boundary place can with discontinuity, form the triangular form potential energy well at the heterojunction boundary place.The potential energy well that produces can limit electric charge diffusion in vertical direction, and signal charge is limited near the heterojunction boundary the raceway groove.
The utility model has the advantages that:
1. gallium nitride has excellent piezoelectric property, can enlarge the range of application of gallium nitride ACT.
2. gallium nitride material has bigger acoustic surface wave speed on the sapphire, helps frequency applications.
3.AlGaN/GaN the big of heterojunction boundary place can produce the high areal density two-dimensional electron gas with strong polarization charge in band band rank.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further described:
Fig. 1 is the single heterojunction Acoustic Charge Transport Delay Line cross-sectional view based on gallium nitride material of the present utility model.
Fig. 2 is the single heterojunction Acoustic Charge Transport Delay Line vertical view based on gallium nitride material of the present utility model.
Fig. 3 is the surface acoustic wave interdigital transducer figure of the single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material of the present utility model.
Fig. 4 is the single heterojunction interface conduction band diagram based on gallium nitride material of the present utility model.
Embodiment
Embodiment: as shown in Figure 1, 2, 3: extension gallium nitride resilient coating 2 on sapphire substrate 1, the semi-insulating type substrate 3 of extension gallium nitride on the gallium nitride resilient coating 2.Epitaxial buffer layer 4 on the semi-insulating type substrate 3 of gallium nitride, extension aluminum gallium nitride barrier layer 5 on the resilient coating 4.Resilient coating 4 and aluminum gallium nitride barrier layer 5 four limits are etched away, and have formed ACT charge transport channel structure 8.There are input 6 and output 7 Ohmic electrodes in aluminum gallium nitride barrier layer 5 two ends.On the semi-insulating type substrate 3 of gallium nitride, make surface acoustic wave interdigital transducer 9.Wherein, surface acoustic wave transducer 9 is made up of electrode 91 and finger 92.The semi-insulating type substrate thickness of gallium nitride needs 〉=5 λ
Saw, λ
SawBe the surface acoustic wave wavelength.Resilient coating 2 improves the gallium nitride material quality in order to reduce by sapphire and the caused high defect concentration of gallium nitride lattice mismatch.Resilient coating 4 is in order to improve interface quality.Substrate material can also be selected carborundum, and resilient coating 2 materials can also be selected aluminium nitride.Resilient coating 4 materials are gallium nitride.
As shown in Figure 4, aluminum gallium nitride barrier layer 5 forms heterojunction structure at the interface with gallium nitride resilient coating 4, because the discontinuity that can be with is forming the triangular form potential-energy barrier at the interface, the triangular form potential-energy barrier is limited to two-dimensional electron gas in the raceway groove, forms the charge transport raceway groove.Gallium nitride has excellent piezoelectric property, compares with GaAs, as long as less driving power just can obtain sufficiently high surface acoustic wave potential field.Therefore, compare with GaAs ACT technology, gallium nitride ACT The Application of Technology scope is more wide.The gallium nitride material of growing on the sapphire has bigger acoustic surface wave speed, is about 5000m/s, and piezoelectric commonly used is big more than 20%.Velocity of sound height means to have bigger wavelength under same frequency, thereby technology is simple relatively when making the high frequency interdigital transducer, realizes easily.The high velocity of sound makes gallium nitride be widely used in high-frequency element.The big of AlGaN/GaN heterojunction boundary place can make two-dimensional electron gas (2DEG) density improve an order of magnitude than the two-dimentional electron density heterojunction of GaAs with strong polarization charge in band band rank.High two-dimensional electron gas density can improve the performance of device.
Claims (8)
1. single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material, comprise substrate, it is characterized in that: described substrate is provided with the semi-insulating type substrate of gallium nitride, the semi-insulating type substrate of described gallium nitride is provided with the aluminum gallium nitride barrier layer, there is the metal pattern that can constitute surface acoustic wave interdigital transducer at the semi-insulating type substrate of described gallium nitride two ends, and there is electrode at described aluminum gallium nitride barrier layer two ends.
2. the single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material according to claim 1 is characterized in that, between the semi-insulating type substrate of described substrate and gallium nitride first resilient coating is arranged.
3. the single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material according to claim 1 is characterized in that, between semi-insulating type substrate of described gallium nitride and the aluminum gallium nitride barrier layer second resilient coating is arranged.
4. the single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material according to claim 1 is characterized in that, the semi-insulating type substrate thickness of described gallium nitride needs 〉=5 λ
Saw, λ
SawBe the surface acoustic wave wavelength.
5. the single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material according to claim 3 is characterized in that, four limits of the described aluminum gallium nitride barrier layer and second resilient coating are etched away to form ACT charge transport raceway groove.
6. the single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material according to claim 2 is characterized in that described first resilient coating is gallium nitride resilient coating or aluminum nitride buffer layer.
7. the single heterojunction Acoustic Charge Transport Delay Line based on gallium nitride material according to claim 3 is characterized in that described second resilient coating is the gallium nitride resilient coating.
8. according to the described single heterojunction Acoustic Charge Transport Delay Line of claim, it is characterized in that described substrate is a sapphire substrate based on gallium nitride material.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010205472576U CN201918388U (en) | 2010-09-29 | 2010-09-29 | Single hetero-junction charge transportation delay line based on gallium nitride (GaN) material |
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| CN2010205472576U CN201918388U (en) | 2010-09-29 | 2010-09-29 | Single hetero-junction charge transportation delay line based on gallium nitride (GaN) material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142452A (en) * | 2010-09-29 | 2011-08-03 | 苏州英诺迅科技有限公司 | Single heterojunction acoustic charge transport delay line based on gallium nitride material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142452A (en) * | 2010-09-29 | 2011-08-03 | 苏州英诺迅科技有限公司 | Single heterojunction acoustic charge transport delay line based on gallium nitride material |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SUZHOU INNOTION TECHNOLOGY CO LTD Free format text: FORMER NAME: SUZHOU YINGNUOXUN TECHNOLOGY CO., LTD. |
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| CP01 | Change in the name or title of a patent holder |
Address after: Linquan street Suzhou City Industrial Park, 215123 No. 399 in Jiangsu Province Patentee after: Suzhou Innotion Technology Co Ltd Address before: Linquan street Suzhou City Industrial Park, 215123 No. 399 in Jiangsu Province Patentee before: Suzhou Yingnuoxun Technology Co., Ltd. |
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| CX01 | Expiry of patent term |
Granted publication date: 20110803 |
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| CX01 | Expiry of patent term |