CN201887037U - 一种封装场效应管的内部引线结构 - Google Patents

一种封装场效应管的内部引线结构 Download PDF

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CN201887037U
CN201887037U CN201020566724XU CN201020566724U CN201887037U CN 201887037 U CN201887037 U CN 201887037U CN 201020566724X U CN201020566724X U CN 201020566724XU CN 201020566724 U CN201020566724 U CN 201020566724U CN 201887037 U CN201887037 U CN 201887037U
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段康胜
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NINGBO MINGXIN MICROELECTRONIC CO Ltd
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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Abstract

本实用新型涉及一种封装场效应管的内部引线结构，包括焊接在场效应管内部的芯片金属表面上的三根键合线，其特征在于：所述三根键合线中与芯片的源极相连的两根键合线采用铝线焊接，与芯片的门极相连的键合线采用金线焊接。与现有技术相比，本实用新型的优点在于：通过将与芯片的门极相连的键合线采用金线代替铝线，金线的直径最小可以做到1mils，不仅能有效缩小芯片面积，还能保证键合线的电性能，芯片面积缩小了，产品整体成本不会受到影响。

Description

一种封装场效应管的内部引线结构
技术领域
本实用新型涉及一种封装场效应管的内部引线结构。
背景技术
目前，在封装场效应管产品时，场效应管产品内部的芯片金属表面上，一般会焊接三根键合线(常叫做内引线)，其中两根键合线是用来与芯片的源极相连的，另一根键合线是用来与芯片的门极相连，芯片背面的漏极直接贴合在基本上。键合线一般采用铝线。键合线的一端采用高频键合技术，使其焊接在外引线焊结点处，而键合线的另一端则采用高频键合技术融化在芯片的金属表面上，以完成键合线和芯片的焊结，键合线与芯片的金属表面之间接触的部位形成键合焊点。
但是，由于目前铝线制作工艺的限制，铝线最小直径只能做到5mils，芯片表面的至少三个键合焊点也必须占据一定面积，为了保证产品质量，芯片的面积有一定要求，如果要将芯片面积做的更小、又对产品的整体成本不会产生较大影响，需要对场效应管的内部封装结构做进一步改进。
实用新型内容
本实用新型所要解决的技术问题是针对上述现有技术提供一种既能将场效应管内部的芯片面积做小、同时能保证芯片上键合线的电性能、产品整体成本不会受到影响的封装场效应管的内部引线结构。
本实用新型解决上述技术问题所采用的技术方案为：该封装场效应管的内部引线结构，包括焊接在场效应管内部的芯片金属表面上的三根键合线，其特征在于：所述三根键合线中与芯片的源极相连的两根键合线采用铝线焊接，与芯片的门极相连的键合线采用金线焊接。
作为改进，所述与芯片的门极相连的键合线在所述芯片金属表面形成的键合焊点的球径为金线直径的2～3倍。
再改进，所述与芯片的门极相连的键合线在所述芯片金属表面形成的键合焊点的厚度为金线直径的40％～80％。
再改进，所述与芯片的门极相连的键合线的弧高至少为15mils。
较好的，所述内部芯片设置在基板的右上角。
与现有技术相比，本实用新型的优点在于：通过将与芯片的门极相连的键合线采 用金线代替铝线，金线的直径最小可以做到1mils，不仅能有效缩小芯片面积，还能保证键合线的电性能，芯片面积缩小了，产品整体成本不会受到影响。
附图说明
图1为本实用新型实施例中封装场效应管的内部引线结构的示意图。
具体实施方式
以下结合附图实施例对本实用新型作进一步详细描述。
请参见图1所示，该封装场效应管的内部封装结构，包括金属基板1、引线框架2、芯片3及引线结构，其中芯片3的背面贴合在金属基板1的右上角，芯片3金属表面上设置有三根键合线组成的引线结构，这三根键合线中与芯片3的源极相连的两根键合线4、5采用铝线焊接，与芯片3的门极相连的键合线6采用金线焊接。并且与芯片3的门极相连的键合线6在所述芯片金属表面形成的键合焊点的球径为金线直径的3倍，与芯片3的门极相连的键合线6在所述芯片金属表面形成的键合焊点的厚度为金线直径的60％，与芯片3的门极相连的键合线6的弧高为15mils。

Claims (5)

1.一种封装场效应管的内部引线结构，包括焊接在场效应管内部的芯片金属表面上的三根键合线，其特征在于：所述三根键合线中与芯片的源极相连的两根键合线采用铝线焊接，与芯片的门极相连的键合线采用金线焊接。
2.根据权利要求1所述的封装场效应管的内部引线结构，其特征在于：所述与芯片的门极相连的键合线在所述芯片金属表面形成的键合焊点的球径为金线直径的2～3倍。
3.根据权利要求1所述的封装场效应管的内部引线结构，其特征在于：所述与芯片的门极相连的键合线在所述芯片金属表面形成的键合焊点的厚度为金线直径的40％～80％。
4.根据权利要求1、2或3所述的封装场效应管的内部引线结构，其特征在于：所述与芯片的门极相连的键合线的弧高至少为15mils。
5.根据权利要求1、2或3所述的封装场效应管的内部引线结构，其特征在于：所述芯片设置在基板的右上角。 
CN201020566724XU 2010-10-15 2010-10-15 一种封装场效应管的内部引线结构 Expired - Fee Related CN201887037U (zh)

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