CN201838572U - 新型半导体导线跳线结构 - Google Patents

新型半导体导线跳线结构 Download PDF

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CN201838572U
CN201838572U CN2010205538658U CN201020553865U CN201838572U CN 201838572 U CN201838572 U CN 201838572U CN 2010205538658 U CN2010205538658 U CN 2010205538658U CN 201020553865 U CN201020553865 U CN 201020553865U CN 201838572 U CN201838572 U CN 201838572U
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jumper
wire jumper
shot copper
boss
welding
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叶国欣
朱坤恒
徐进寿
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DUNNAN MICROELECTRONIC (WUXI) Co Ltd
Shanghai Seefull Electronic Co Ltd
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DUNNAN MICROELECTRONIC (WUXI) Co Ltd
Shanghai Seefull Electronic Co Ltd
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    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
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    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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    • H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
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Abstract

本实用新型公开了一种新型半导体导线跳线结构，将跳线的一面制成一个凸台或数个凸台，凸台的位置对应于传统焊接铜粒的位置，以替代铜粒。本实用新型的优点是在生产过程中，减少了铜粒的装填、跳线和铜粒之间焊片的装填，提高了效率，同时也节省了预焊制程。为了增加跳线在吸盘上装填时的可操作性，将跳线加工成对称形状，在操作中利用形状的冗余克服了识别跳线的方向的难题，单独或结合设计成左右对称，上下对称，前后对称，避免装填时的困难。

Description

新型半导体导线跳线结构
技术领域
本实用新型涉及一种新型半导体导线跳线结构，特别是该跳线的一面制成类似于跳线和铜粒焊接后的形状。
背景技术
目前半导体分离器件的手动焊接制程中，广泛使用的方法是：将铜粒与晶粒的一面焊接在一起，晶粒的另一面与支架的表面焊接在一起，而跳线分别与铜粒和支架桥接焊接，将两者连接在一起，形成电路通路。铜粒与晶粒，晶粒与支架，跳线和铜粒，跳线和支架的桥接处分别使用焊片或锡膏等可焊材料焊接在一起。
在这种情况下，需要将焊接的物料---铜粒，跳线，焊片分别装填在吸盘上，然后按一定的先后顺序逐一放置到组焊板上，并放上支架，最后进焊接炉进行组焊焊接。很多时候还需要将跳线，铜粒和晶粒先行焊接在一起，实现预焊，此时需先将物料逐一放置到预焊板上，进焊接炉焊接，随后再用吸盘将预焊品放置至组焊盘上，和支架，焊片实现组焊。这样，组焊前组装的每种物料都要通过吸盘，逐一放置到组焊盘，步骤较多，通常还需要预焊，生产效率受到限制。组装情况如图1和图2所示，图1为原有跳线焊接正视图，图2为图1的A-A剖视图。跳线的一端与支架的凸台通过焊锡相接，跳线的另一端，依次是跳线，铜粒，晶粒，支架叠放在一起，相互之间通过焊锡相接，从而形成电路。
对原有的跳线进行了改进，改进后的跳线结构如图3和图4所示。图3为改进后的跳线正视图，图4为图3的B-B剖视图。该跳线在下面和铜粒的焊接位置加工出凸台，以取代铜粒。这样的结构，节省了铜粒和焊片装填的步骤，提高了效率。但是在吸盘上装填时，无法有效的识别上下面和左右面，容易引起跳线的翻转。
实用新型内容
本实用新型所要解决的技术问题是要提供一种在生产过程中减少铜粒的装填，提高效率的新型半导体导线跳线结构。
为了解决以上的技术问题，本实用新型提供了一种新型半导体导线跳线结构，将跳线的一面制成一个凸台或数个凸台，凸台的位置对应于传统焊接铜粒的位置，以替代铜粒。
所述跳线上制成的凸台，是上、下二个面对称，左、右对称的。
所述跳线的凸台为方形、或为长方形、或为圆形、或为圆锥形、或为平行四边形、或是前述几个形状的任意组合。
本实用新型不但在实际工序中节省了铜粒和焊片装填的步骤，提高了效率；并且由于新型跳线由于上下面对称，利用形状的冗余有效地避免了跳线因上下面形状不一，装填时的翻转的操作失误。同时，也可以省去将铜粒，跳线，晶粒预先焊接的制程。
本实用新型的优越功效在于：在生产过程中，减少了铜粒的装填、跳线和铜粒之间焊片的装填，提高了效率，同时也节省了预焊制程。为了增加跳线在吸盘上装填时的可操作性，将跳线加工成对称形状，在操作中利用形状的冗余克服了识别跳线的方向的难题，单独或结合设计成左右对称，上下对称，前后对称，避免装填时的困难。
附图说明
图1为原有跳线焊接的正视图；
图2为图1的A-A剖视图；
图3为改进后跳线的正视图；
图4为图3的B-B剖视图，在一个面上制有凸台；
图5为本实用新型跳线的正视图；
图6为图5的C-C剖视图，在二个面对称制有凸台；
图7为本实用新型跳线焊接的正视图；
图8为图7的D-D剖视图；
图9为本实用新型跳线衍生型焊接的正视图；
图10为图9的E-E剖视图；
图中标号说明
1—跳线；                            101—凸台；
2—铜粒；                            3—晶粒；
4—支架；                            5—焊锡。
具体实施方式
请参阅附图所示，对本实用新型作进一步的描述。
如图5和图6本实用新型跳线的结构所示，本实用新型提供了一种新型半导体导线跳线结构，将跳线1的一面制成一个凸台101或数个凸台101，凸台101的位置对应于传统焊接铜粒2的位置，以替代铜粒2。所述跳线1上制成的凸台101，是上、下二个面对称，左、右对称的。
如图7和图8本实用新型跳线焊接示意图所示，跳线1一边凸台101和支架4通过焊锡5相接，跳线1同一面的另一边凸台101直接通过焊锡5和晶粒3的一面相接，晶粒3的另一面通过焊锡5和支架4相接，从而形成电路。
有些时候，跳线1上需要焊接的晶粒3不止一处。如图9和图10所示为跳线和两个晶粒焊接情况。图9为本实用新型跳线衍生型焊接正视图，图10是本实用新型跳线衍生型焊接E-E剖视图。跳线衍生型一面制造出两个和晶粒3焊接的凸台101，并且加工成对称，以易于吸盘装填，从而在某些应用场合同时与两个晶粒3和支架4的焊接，完成一定的功能。当然本实用新型跳线的衍生型也可以根据具体应用场合，在适当位置加工出相应数量的凸台，实现和三个及三个以上晶粒的焊接，以完成特定的功能。
从以上导线支架的组装实施中可知：本实用新型是将跳线一面制造出一个凸台101或数个凸台101，以取代铜粒2，和相应数量的晶粒3直接通过焊料焊接。在生产过程中，减少了铜粒2的装填、跳线1和铜粒2之间焊片的装填，提高了效率。同时也节省了预焊制程。为了增加跳线1在吸盘上装填时的可操作性，将跳线1加工成对称形状。这样，在操作中利用形状的冗余克服了识别跳线的方向的难题。同样，在必要时也可以利用形状上的冗余，单独或结合设计成左右对称，上下对称，前后对称，避免装填时的困难。
以上实施方案中，跳线1的凸台101为方形，但是按实际需求，可以加工成长方形、或圆形、或圆锥形、或平行四边形、或是前述几个形状的任意组合，这些都应属本实用新型所请求保护的专利涵盖范围内。

Claims (3)

1.一种新型半导体导线跳线结构，其特征在于：将跳线的一面制成一个凸台或数个凸台，凸台的位置对应于传统焊接铜粒的位置，以替代铜粒。
2.根据权利要求1所述的新型半导体导线跳线结构，其特征在于：所述跳线上制成的凸台，是上、下二个面对称，左、右对称的。
3.根据权利要求1所述的新型半导体导线跳线结构，其特征在于：所述跳线的凸台为方形、或为长方形、或为圆形、或为圆锥形、或为平行四边形、或是前述几个形状的任意组合。
CN2010205538658U 2010-10-09 2010-10-09 新型半导体导线跳线结构 Expired - Lifetime CN201838572U (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103503132A (zh) * 2011-06-09 2014-01-08 三菱电机株式会社 半导体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103503132A (zh) * 2011-06-09 2014-01-08 三菱电机株式会社 半导体装置
EP2720263A1 (en) * 2011-06-09 2014-04-16 Mitsubishi Electric Corporation Semiconductor device
EP2720263A4 (en) * 2011-06-09 2015-04-22 Mitsubishi Electric Corp SEMICONDUCTOR COMPONENT
CN103503132B (zh) * 2011-06-09 2016-06-01 三菱电机株式会社 半导体装置
US9401319B2 (en) 2011-06-09 2016-07-26 Mitsubishi Electric Corporation Semiconductor device

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