CN201809476U - Trivalve crucible for elemental crystal furnace - Google Patents
Trivalve crucible for elemental crystal furnace Download PDFInfo
- Publication number
- CN201809476U CN201809476U CN201020563025XU CN201020563025U CN201809476U CN 201809476 U CN201809476 U CN 201809476U CN 201020563025X U CN201020563025X U CN 201020563025XU CN 201020563025 U CN201020563025 U CN 201020563025U CN 201809476 U CN201809476 U CN 201809476U
- Authority
- CN
- China
- Prior art keywords
- crucible
- lobe
- trivalve
- blocks
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model provides a trivalve crucible for an elemental crystal furnace, which comprises a crucible body. The crucible body comprises three blocks which are connected into a graphite crucible at joints, wherein the three blocks are fan-shaped parts formed by pressing in one step, thereby achieving uniform thickness, so that internal cracking caused by large difference between inside temperature and outside temperature can be prevented in the roasting and graphitization processes of a product, uneven dipping caused by larger wall thickness can be prevented in the dipping process, and thus, the use performance of the trivalve crucible cannot be influenced; and in addition, the trivalve crucible has the advantage of simple structure and low cost.
Description
Technical field
The utility model relates to a kind of crucible, and particularly a kind of single crystal growing furnace belongs to the technical field of plumbago crucible with three lobe crucibles.
Background technology
Along with the development of society, energy-saving and emission-reduction are more and more paid attention in the whole world.Solar cell is new forms of energy, because it has inexhaustible and environmental protection, and by extensive concern.Because the optoelectronic transformation efficiency of polysilicon is low than silicon single crystal, therefore need vertical pulling conversion in the graphite thermal field.The graphite thermal field is one of most important condition of silicon materials Cheng Jing, and single crystal growing furnace is all the more so, and the Gradient distribution of thermal field directly affects can pull out monocrystalline, and the quality quality of pulling monocrystal.When making silicon single crystal, need use three lobe pots, three lobe pots in the prior art, comprise a pot body, wherein, described pot body comprises three lobe blocks, described three lobe blocks link into an integrated entity at interface, form plumbago crucible, three lobe crucibles of this structure, employing waits static pressure pole or static pressure bowl moulding mixture to process, and adds man-hour, earlier the pole split to be become three lobe bodies, hollow body when again three lobe bodies of entity being processed, therefore, process cumbersomely, and cost is all than higher; In addition, make product in roasting and graphitization technique,, and produce implosion easily because internal-external temperature difference is excessive; In impregnation technology, because raw material is a right cylinder, wall thickness causes dipping inhomogeneous more greatly, influences the use properties of single crystal growing furnace.
The utility model content
Technical problem to be solved in the utility model provides a kind of single crystal growing furnace with low cost, easy to process and simple in structure with three lobe pots.
In order to solve the problems of the technologies described above, a kind of single crystal growing furnace of the utility model comprises a pot body with three lobe pots, described pot body comprises three lobe blocks, the described three lobe block interfaces formation plumbago crucible that links into an integrated entity, wherein, described three lobe blocks are the fan-shaped component of a compression moulding.
Above-mentioned a kind of single crystal growing furnace is with three lobe pots, and wherein, the angle α between the described fan-shaped component dual-side is 120 °.
The utility model can be realized following beneficial effect:
1, because described three lobe blocks is the fan-shaped component of a compression moulding, make the thickness of three lobe blocks even, make product in roasting and graphitization technique, avoid because internal-external temperature difference is excessive, and produce Nei Lie ﹑ in impregnation technology, prevent owing to wall thickness is inhomogeneous than flooding greatly, thereby influence the use properties of three lobe pots; And the utility model is simple in structure, with low cost.
2, because the angle between the described fan-shaped component dual-side is 120 °, easy to process, and operation is fairly simple when connecting.
Description of drawings
Fig. 1 is a structural representation of the present utility model.
Embodiment
The utility model is described in further detail below in conjunction with accompanying drawing.
As shown in the figure, in order to solve the problems of the technologies described above, a kind of single crystal growing furnace of the utility model is with three lobe pots, comprise pot body 1, described pot body, comprise three lobe blocks 11, described three lobe blocks, 11 interfaces link into an integrated entity by bonding or other modes, form plumbago crucible, described three lobe blocks 11 are the fan-shaped component of a compression moulding, because described three lobe blocks 11 are the fan-shaped component of a compression moulding, make the thickness of three lobe blocks 11 even, make product in roasting and graphitization technique, avoid because internal-external temperature difference is excessive, and generation Nei Lie ﹑ prevents owing to wall thickness is inhomogeneous than flooding greatly in impregnation technology, thereby influences the use properties of three lobe pots; And the utility model is simple in structure, with low cost.Angle α between the described fan-shaped component dual-side is unrestricted, in the present embodiment, for easy to process, it is designed to 120 °.
In sum, the utility model is simple in structure, with low cost, and under same molding device prerequisite, can produce the big specification right cylinder graphite product bigger 3 times than right cylinder section area, in addition, any three lobes all can be processed into one three lobe pot, and a lobe damages, replaceable, thus greatly reduce the cost that uses enterprise.
The utility model is not limited to the scope that the foregoing description is described, and the technical scheme that the means that all employing equivalences are replaced obtain is all in the scope of the utility model protection.
Claims (2)
1. a single crystal growing furnace comprises a pot body with three lobe pots, and described pot body comprises three lobe blocks, and the described three lobe block interfaces formation plumbago crucible that links into an integrated entity is characterized in that described three lobe blocks are the fan-shaped component of a compression moulding.
2. a kind of according to claim 1 single crystal growing furnace is characterized in that with three lobe pots the angle α between the described fan-shaped component dual-side is 120 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020563025XU CN201809476U (en) | 2010-10-15 | 2010-10-15 | Trivalve crucible for elemental crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020563025XU CN201809476U (en) | 2010-10-15 | 2010-10-15 | Trivalve crucible for elemental crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201809476U true CN201809476U (en) | 2011-04-27 |
Family
ID=43892416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201020563025XU Expired - Fee Related CN201809476U (en) | 2010-10-15 | 2010-10-15 | Trivalve crucible for elemental crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201809476U (en) |
-
2010
- 2010-10-15 CN CN201020563025XU patent/CN201809476U/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101724899B (en) | Growth process for N-type solar energy silicon single crystal with minority carrier service life of larger than or equal to 1,000 microseconds | |
| CN101935869B (en) | Crucible and substrate slice for growing and casting monocrystalline silicon | |
| CN108358653B (en) | 3D weaving process for carbon-carbon fiber crucible for photovoltaic monocrystalline silicon ingot furnace | |
| CN202482487U (en) | Crystal multi-die growth device through adopting EFG (edge-defined, film-fed growth) method | |
| CN202265623U (en) | Crucible for polycrystalline ingot furnace to cast mono-like crystalline silicon | |
| CN101864591A (en) | Improving method of silicon monocrystalline furnace thermal field system | |
| CN206486622U (en) | A kind of device that G7 polycrystal silicon ingots are cast for GT polycrystalline furnaces | |
| CN203583004U (en) | Sectional type suspended heat shield | |
| CN201560248U (en) | Graphite crucible for single crystal furnace | |
| CN201809476U (en) | Trivalve crucible for elemental crystal furnace | |
| CN102011180A (en) | Thermal field structure of single crystal furnace | |
| CN201933196U (en) | Graphite crucible for single crystal furnace | |
| CN201901727U (en) | Closed thermal field system for single crystal furnace | |
| CN201020357Y (en) | High grade coarse grain diamond synthetic device | |
| CN201990762U (en) | Heating device of czochralski single crystal furnace | |
| CN202187086U (en) | Gradient heater for monocrystal furnace | |
| CN202380134U (en) | Graphite/carbon felt composite electrode for monocrystalline silicon growth furnace | |
| CN204251760U (en) | Thermal field of czochralski silicon | |
| CN202954143U (en) | Crucible with upper body and lower body separated | |
| CN201648565U (en) | Thermal field system for silicon single crystal furnace | |
| CN201864791U (en) | Graphite guiding cylinder of 800 type silicon single crystal furnace | |
| CN202131104U (en) | Bell jar and chassis of polycrystalline silicon reduction furnace | |
| CN102168301A (en) | Graphite crucible in czochralski single crystal furnace | |
| CN207347698U (en) | A kind of N-type crystal growth graphite field | |
| CN201942784U (en) | Thermal field device applicable to 20inch silicon single crystal growth in straight pulling method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110427 Termination date: 20111015 |