CN201804711U - Package structure of capacitor - Google Patents
Package structure of capacitor Download PDFInfo
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- CN201804711U CN201804711U CN2010205350009U CN201020535000U CN201804711U CN 201804711 U CN201804711 U CN 201804711U CN 2010205350009 U CN2010205350009 U CN 2010205350009U CN 201020535000 U CN201020535000 U CN 201020535000U CN 201804711 U CN201804711 U CN 201804711U
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Abstract
The utility model discloses a package structure of the capacitor, which comprises a substrate unit, an insulation unit, and a capacitor unit. The substrate unit comprises at least one top substrate, and at least one bottom substrate. The insulation unit comprises at least one insulation layer filled between at least one top substrate and at least one bottom substrate. The capacitor unit comprises at least one capacitor element arranged between the at least one top substrate and at least one bottom substrate and coated by the at least one insulation layer. The utility model provides rapid and effective package manner for the capacitor.
Description
Technical field
The utility model relates to a kind of encapsulating structure, relates in particular to a kind of electric capacity encapsulating structure.
Background technology
Capacitor is used in consumer electrical home appliances, computer motherboard and periphery thereof, power supply unit, communication products, and the primary element of automobile etc. widely, and its significant feature comprises: filtering, bypass, rectification, coupling, decoupling, phase inversion etc.It is one of indispensable element in the electronic product.Capacitor has different kenels according to different materials and purposes.Comprise aluminium matter electrochemical capacitor, tantalum matter electrochemical capacitor, laminated ceramic electric capacity, thin-film capacitor etc.
Yet prior art all can't provide quick and effective packaged type at capacitor.Therefore, the improving of the above-mentioned defective of inventor's thoughts, the concentrated observation and research, and cooperate the utilization of scientific principle, and propose a kind of reasonable in design and effectively improve the utility model of above-mentioned defective.
Summary of the invention
The purpose of this utility model is a technical problem to be solved, is to provide a kind of encapsulating structure, and it can be used for encapsulating any capacity cell (for example tantalum matter electric capacity), to make a kind of electric capacity encapsulating structure.
In order to solve the problems of the technologies described above, according to wherein a kind of scheme of the present utility model, provide a kind of electric capacity encapsulating structure, it comprises: a base board unit, an insulation unit and a capacitor cell.Wherein, this base board unit has at least one top layer substrate and at least one bottom substrate.This insulation unit has at least one insulating barrier that is filled between above-mentioned at least one top layer substrate and the above-mentioned at least one bottom substrate.This capacitor cell has at least one be arranged at electrically between above-mentioned at least one top layer substrate and the above-mentioned at least one bottom substrate and by capacity cell that above-mentioned at least one insulating barrier coated.
Electric capacity encapsulating structure of the present utility model, preferred, above-mentioned at least one top layer substrate, above-mentioned at least one insulating barrier and above-mentioned at least one bottom substrate from top to bottom are stacked in regular turn.
Electric capacity encapsulating structure of the present utility model, preferably, the upper surface of above-mentioned at least one top layer substrate has at least two top layer conductive welding pad, the lower surface of above-mentioned at least one top layer substrate has at least one top layer conductive traces, the upper surface of above-mentioned at least one bottom substrate has at least one bottom conductive traces, and the lower surface of above-mentioned at least one bottom substrate has at least two bottom conductive welding pad.
Electric capacity encapsulating structure of the present utility model, preferably, above-mentioned at least one capacity cell is electrically connected between above-mentioned at least one top layer conductive traces and the above-mentioned at least one bottom conductive traces, and is shaped one between each top layer conductive welding pad and each bottom conductive welding pad in order to connect the conductive layer of each top layer conductive welding pad and each corresponding bottom conductive welding pad.
Electric capacity encapsulating structure of the present utility model, preferably, the side of above-mentioned at least one top layer substrate has at least two first chadlesses, the side of above-mentioned at least one insulating barrier has second chadless of at least two corresponding above-mentioned at least two first chadlesses of difference, and the side of above-mentioned at least one bottom substrate has the 3rd chadless of at least two corresponding above-mentioned at least two second chadlesses of difference; Above-mentioned at least one top layer substrate has at least two first conductive layers that are formed separately on the inner surface of above-mentioned at least two first chadlesses, above-mentioned at least one insulating barrier has at least two second conductive layers that are formed separately on the inner surface of above-mentioned at least two second chadlesses and are electrically connected at above-mentioned at least two first conductive layers respectively, and above-mentioned at least one bottom substrate has at least two the 3rd conductive layers that are formed separately on the inner surface of above-mentioned at least two the 3rd chadlesses and are electrically connected at above-mentioned at least two second conductive layers respectively.
Electric capacity encapsulating structure of the present utility model, preferred, above-mentioned at least one capacity cell has one and stretches out and electrically be contacted with the wherein conductive connecting pin of one second conductive layer, and above-mentioned at least one capacity cell is a tantalum matter electric capacity.
Electric capacity encapsulating structure of the present utility model, preferably, this electric capacity encapsulating structure also further comprises: a conductive unit, it has at least two electric conductors, and it electrically is contacted with between the upper surface of above-mentioned at least one top layer substrate and above-mentioned at least one capacity cell respectively and is electrically connected between the lower surface and above-mentioned at least one bottom substrate of above-mentioned at least one capacity cell.
In order to solve the problems of the technologies described above, according to wherein a kind of scheme of the present utility model, provide a kind of electric capacity encapsulating structure, it comprises: a base board unit, an insulation unit and a capacitor cell.Wherein, this base board unit has at least one top layer substrate, at least one Intermediate substrate and at least one bottom substrate.This insulation unit has at least one first insulating barrier and at least one second insulating barrier that is filled between above-mentioned at least one Intermediate substrate and the above-mentioned at least one bottom substrate that is filled between above-mentioned at least one top layer substrate and the above-mentioned at least one Intermediate substrate.This capacitor cell has at least one first capacity cell that is arranged at electrically between above-mentioned at least one top layer substrate and the above-mentioned at least one Intermediate substrate and is coated by above-mentioned at least one first insulating barrier and at least one second capacity cell that is arranged at electrically between above-mentioned at least one Intermediate substrate and the above-mentioned at least one bottom substrate and is coated by above-mentioned at least one second insulating barrier.
Electric capacity encapsulating structure of the present utility model, preferably, above-mentioned at least one top layer substrate, above-mentioned at least one first insulating barrier, above-mentioned at least one Intermediate substrate, above-mentioned at least one second insulating barrier and above-mentioned at least one bottom substrate from top to bottom are stacked in regular turn, and above-mentioned at least one first capacity cell and above-mentioned at least one second capacity cell are all tantalum matter electric capacity.
Electric capacity encapsulating structure of the present utility model, preferably, this electric capacity encapsulating structure also further comprises: a conductive unit, it has at least two first electric conductors and at least two second electric conductors, wherein above-mentioned at least two first electric conductors electrically are contacted with between the upper surface of above-mentioned at least one top layer substrate and above-mentioned at least one first capacity cell respectively and electrically are contacted with between the lower surface and above-mentioned at least one Intermediate substrate of above-mentioned at least one first capacity cell, and above-mentioned at least two second electric conductors electrically are contacted with respectively to reach between the upper surface of above-mentioned at least one Intermediate substrate and above-mentioned at least one second capacity cell and electrically are contacted with between the lower surface and above-mentioned at least one bottom substrate of above-mentioned at least one second capacity cell.
Therefore, the beneficial effects of the utility model are: the utility model can be by having one deck accommodation space between above-mentioned at least one top layer substrate and the above-mentioned at least one bottom substrate, and is at least one by capacity cell that above-mentioned at least one insulating barrier coated or surrounded to accommodate.Perhaps, the utility model can reach " having one deck accommodation space between above-mentioned at least one Intermediate substrate and the above-mentioned at least one bottom substrate " by " having one deck accommodation space between above-mentioned at least one top layer substrate and the above-mentioned at least one Intermediate substrate ", to accommodate at least two respectively respectively by capacity cell that above-mentioned at least two insulating barriers coated or surrounded.
For enabling further to understand feature of the present utility model and technology contents, see also following about detailed description of the present utility model and accompanying drawing, yet appended accompanying drawing only provide with reference to and the explanation usefulness, be not to be used for the utility model is limited.
Description of drawings
Figure 1A is the wherein perspective exploded view at a visual angle of the utility model first embodiment;
Figure 1B is the perspective exploded view at the other visual angle of the utility model first embodiment;
Fig. 1 C is the solid combination schematic diagram of the utility model first embodiment;
Fig. 1 D is the generalized section of the utility model first embodiment;
Fig. 2 is the solid combination schematic diagram of the utility model second embodiment;
Fig. 3 A is the solid combination schematic diagram of the utility model the 3rd embodiment;
Fig. 3 B is the generalized section of the utility model the 3rd embodiment;
Fig. 4 is the solid combination schematic diagram of the utility model second embodiment.
Wherein, description of reference numerals is as follows:
Encapsulating structure Z
Top layer conductive welding pad 11A
Top layer conductive traces 11B
The first chadless 11C
The first conductive layer 11D
Bottom conductive traces 12A
Bottom conductive welding pad 12B
The 3rd chadless 12C
The 3rd conductive layer 12D
Opening 200
The second chadless 20A
The second conductive layer 20B
Conductive connecting pin 300
Through hole P
Conductive layer C
Embodiment
See also shown in Figure 1A to Fig. 1 D, first embodiment of the invention provides a kind of electric capacity encapsulating structure Z, and it comprises: a base board unit 1, an insulation unit 2 and a capacitor cell 3.
Wherein, this base board unit 1 has at least one top layer substrate 11 and at least one bottom substrate 12.For instance, the upper surface of above-mentioned at least one top layer substrate 11 has at least two top layer conductive welding pad 11A, the lower surface of above-mentioned at least one top layer substrate 11 has at least one top layer conductive traces 11B, the upper surface of above-mentioned at least one bottom substrate 12 has at least one bottom conductive traces 12A, and the lower surface of above-mentioned at least one bottom substrate 12 has at least two bottom conductive welding pad 12B.
Moreover this insulation unit 2 has at least one insulating barrier 20 that is filled between above-mentioned at least one top layer substrate 11 and the above-mentioned at least one bottom substrate 12.In addition, above-mentioned at least one top layer substrate 11, above-mentioned at least one insulating barrier 20 and above-mentioned at least one bottom substrate 12 from top to bottom be stacked in regular turn (shown in Fig. 1 C).
In addition, the side of above-mentioned at least one top layer substrate 11 has at least two first chadless 11C, the side of above-mentioned at least one insulating barrier 20 has the second chadless 20A of at least two corresponding above-mentioned at least two first chadless 11C of difference, and the side of above-mentioned at least one bottom substrate 12 has the 3rd chadless 12C of at least two corresponding above-mentioned at least two second chadless 20A of difference.In other words, each first chadless 11C, each second chadless 20A and each the 3rd chadless 12C all are connected together to form each through hole P (the solid combination schematic diagram shown in Fig. 1 C).
In addition, above-mentioned at least one top layer substrate 11 has at least two first conductive layer 11D that are formed separately on the inner surface of above-mentioned at least two first chadless 11C, above-mentioned at least one insulating barrier 20 has at least two second conductive layer 20B that are formed separately on the inner surface of above-mentioned at least two second chadless 20A and are electrically connected at the described first conductive layer 11D respectively, and above-mentioned at least one bottom substrate 12 has at least two the 3rd conductive layer 12D that are formed separately on the inner surface of above-mentioned at least two the 3rd chadless 12C and are electrically connected at above-mentioned at least two second conductive layer 20B respectively.In other words, each first conductive layer 11D, each second conductive layer 20B and each the 3rd conductive layer 12D all are connected together to form each conductive layer C (the solid combination schematic diagram shown in Fig. 1 C).
Moreover, this capacitor cell 3 has and at least onely is arranged between above-mentioned at least one top layer substrate 11 and the above-mentioned at least one bottom substrate 12 electrically and by 20 capacity cells that coat fully or center on 30 of above-mentioned at least one insulating barrier (for example tantalum matter electric capacity), wherein above-mentioned at least one capacity cell 30 is electrically connected between above-mentioned at least one top layer conductive traces 11B and the above-mentioned at least one bottom conductive traces 12A.In addition, above-mentioned at least one capacity cell 30 has one and stretches out and electrically be contacted with the wherein conductive connecting pin 300 of one second conductive layer 20B.In other words, this conductive connecting pin 300 can pass above-mentioned at least one insulating barrier 20 and electrically be contacted with wherein a conductive layer C (shown in Fig. 1 C).
Moreover, the encapsulating structure of the utility model first embodiment also further comprises: a conductive unit 4, it has at least two electric conductors 40 (for example conducting resinl), and it electrically is contacted with between the upper surface of above-mentioned at least one top layer substrate 11 and above-mentioned at least one capacity cell 30 respectively and is electrically connected between the lower surface and above-mentioned at least one bottom substrate 12 of above-mentioned at least one capacity cell 30.
Shown in Fig. 1 D, has one deck accommodation space between above-mentioned at least one top layer substrate 11 and the above-mentioned at least one bottom substrate 12, its can in order to accommodate at least one capacity cells 30 that coated fully by 20 of above-mentioned at least one insulating barriers (above-mentioned at least one insulating barrier 20 be adjacent to fully above-mentioned at least one capacity cell 30 around, that is between above-mentioned at least one insulating barrier 20 and the above-mentioned at least one capacity cell 30 without any the gap) or accommodate at least one capacity cell 30 that is centered on by above-mentioned at least one insulating barrier 20 (above-mentioned at least one insulating barrier 20 be not adjacent to fully above-mentioned at least one capacity cell 30 around, that is can be gapped between above-mentioned at least one insulating barrier 20 and the above-mentioned at least one capacity cell 30) so that the utility model can be reached the making of electric capacity encapsulating structure.
See also shown in Figure 2ly, second embodiment of the invention provides a kind of electric capacity encapsulating structure Z, and it comprises: a base board unit 1, an insulation unit 2 and a capacitor cell (not shown).By Fig. 2 and Fig. 1 C more as can be known, the difference of second embodiment and the first embodiment maximum is: after this top layer substrate 11, this insulating barrier 20 piled up mutually with this bottom substrate 12, directly two opposition side ends at this electric capacity encapsulating structure Z were provided with two conduction groups (as the two opposition side ends that are enclosed within this electric capacity encapsulating structure Z) respectively.In other words, second embodiment not only has two top layer conductive welding pad 11A and two bottom conductive welding pad 12B, and as shown in Figure 2, shaping one conductive layer between the corresponding bottom conductive welding pad with each of each the top layer conductive welding pad 11A 12B is to connect the corresponding bottom conductive welding pad with each of each top layer conductive welding pad 11A 12B.
See also shown in Fig. 3 A and Fig. 3 B, the difference of the utility model the 3rd embodiment and the first embodiment maximum is: in the 3rd embodiment, this base board unit 1 has at least one top layer substrate 11, at least one Intermediate substrate 13 and at least one bottom substrate 12.This insulation unit 2 has at least one first insulating barrier 20 and at least one second insulating barrier 20 that is filled between above-mentioned at least one Intermediate substrate 13 and the above-mentioned at least one bottom substrate 12 that is filled between above-mentioned at least one top layer substrate 11 and the above-mentioned at least one Intermediate substrate 13.This capacitor cell 3 has at least one first capacity cell 30 (for example tantalum matter electric capacity) that is arranged at electrically between above-mentioned at least one top layer substrate 11 and the above-mentioned at least one Intermediate substrate 13 and is coated by above-mentioned at least one first insulating barrier 20 and at least one second capacity cell 30 (for example tantalum matter electric capacity) that is arranged at electrically between above-mentioned at least one Intermediate substrate 13 and the above-mentioned at least one bottom substrate 12 and is coated by above-mentioned at least one second insulating barrier 20.This conductive unit 4 has at least two first electric conductors 40 and at least two second electric conductors 40.
Wherein, above-mentioned at least one top layer substrate 11, above-mentioned at least one first insulating barrier 20, above-mentioned at least one Intermediate substrate 13, above-mentioned at least one second insulating barrier 20 and above-mentioned at least one bottom substrate 12 from top to bottom are stacked (as shown in Figure 3A) in regular turn.In addition, above-mentioned at least two first electric conductors 40 electrically are contacted with between the upper surface of above-mentioned at least one top layer substrate 11 and above-mentioned at least one first capacity cell 30 respectively and electrically are contacted with between the lower surface and above-mentioned at least one Intermediate substrate 13 of above-mentioned at least one first capacity cell 30, and above-mentioned at least two second electric conductors 40 electrically are contacted with respectively to reach between the upper surface of above-mentioned at least one Intermediate substrate 13 and above-mentioned at least one second capacity cell 30 and electrically are contacted with between the lower surface and above-mentioned at least one bottom substrate 12 of above-mentioned at least one second capacity cell 30.
See also shown in Figure 4ly, second embodiment of the invention provides a kind of electric capacity encapsulating structure Z, and it comprises: a base board unit 1, an insulation unit 2 and a capacitor cell (not shown).By Fig. 4 and Fig. 3 B more as can be known, the difference of the 4th embodiment and the 3rd embodiment maximum is: after this top layer substrate 11, this insulating barrier 20, this Intermediate substrate 13, this insulating barrier 20 piled up mutually with this bottom substrate 12, directly two opposition side ends at this electric capacity encapsulating structure Z were provided with two conduction groups (as the two opposition side ends that are enclosed within this electric capacity encapsulating structure Z) respectively.In other words, the 4th embodiment not only has two top layer conductive welding pad 11A and two bottom conductive welding pad 12B, and as shown in Figure 4, shaping one conductive layer between the corresponding bottom conductive welding pad with each of each the top layer conductive welding pad 11A 12B is to connect the corresponding bottom conductive welding pad with each of each top layer conductive welding pad 11A 12B.
The utility model can be by having one deck accommodation space between above-mentioned at least one top layer substrate and the above-mentioned at least one bottom substrate, and is at least one by capacity cell that above-mentioned at least one insulating barrier coated or surrounded to accommodate.Perhaps, the utility model can reach " having one deck accommodation space between above-mentioned at least one Intermediate substrate and the above-mentioned at least one bottom substrate " by " having one deck accommodation space between above-mentioned at least one top layer substrate and the above-mentioned at least one Intermediate substrate ", to accommodate at least two respectively respectively by capacity cell that above-mentioned at least two insulating barriers coated or surrounded.
The above only is a preferable possible embodiments of the present utility model, and is non-so limit to protection range of the present utility model, so the equivalence techniques that uses the utility model specification and accompanying drawing content to do such as changes, all is contained in the protection range of the present utility model.
Claims (10)
1. an electric capacity encapsulating structure is characterized in that, comprising:
One base board unit, it has at least one top layer substrate and at least one bottom substrate;
One insulation unit, it has at least one insulating barrier that is filled between above-mentioned at least one top layer substrate and the above-mentioned at least one bottom substrate; And
One capacitor cell, it has at least one be arranged at electrically between above-mentioned at least one top layer substrate and the above-mentioned at least one bottom substrate and by capacity cell that above-mentioned at least one insulating barrier coated.
2. electric capacity encapsulating structure as claimed in claim 1 is characterized in that, above-mentioned at least one top layer substrate, above-mentioned at least one insulating barrier and above-mentioned at least one bottom substrate from top to bottom are stacked in regular turn.
3. electric capacity encapsulating structure as claimed in claim 1, it is characterized in that, the upper surface of above-mentioned at least one top layer substrate has at least two top layer conductive welding pad, the lower surface of above-mentioned at least one top layer substrate has at least one top layer conductive traces, the upper surface of above-mentioned at least one bottom substrate has at least one bottom conductive traces, and the lower surface of above-mentioned at least one bottom substrate has at least two bottom conductive welding pad.
4. electric capacity encapsulating structure as claimed in claim 3, it is characterized in that, above-mentioned at least one capacity cell is electrically connected between above-mentioned at least one top layer conductive traces and the above-mentioned at least one bottom conductive traces, and is shaped one between each top layer conductive welding pad and each bottom conductive welding pad in order to connect the conductive layer of each top layer conductive welding pad and each corresponding bottom conductive welding pad.
5. electric capacity encapsulating structure as claimed in claim 3, it is characterized in that, the side of above-mentioned at least one top layer substrate has at least two first chadlesses, the side of above-mentioned at least one insulating barrier has second chadless of at least two corresponding above-mentioned at least two first chadlesses of difference, and the side of above-mentioned at least one bottom substrate has the 3rd chadless of at least two corresponding above-mentioned at least two second chadlesses of difference; Above-mentioned at least one top layer substrate has at least two first conductive layers that are formed separately on the inner surface of above-mentioned at least two first chadlesses, above-mentioned at least one insulating barrier has at least two second conductive layers that are formed separately on the inner surface of above-mentioned at least two second chadlesses and are electrically connected at above-mentioned at least two first conductive layers respectively, and above-mentioned at least one bottom substrate has at least two the 3rd conductive layers that are formed separately on the inner surface of above-mentioned at least two the 3rd chadlesses and are electrically connected at above-mentioned at least two second conductive layers respectively.
6. electric capacity encapsulating structure as claimed in claim 1 is characterized in that, above-mentioned at least one capacity cell has one and stretches out and electrically be contacted with the wherein conductive connecting pin of one second conductive layer, and above-mentioned at least one capacity cell is a tantalum matter electric capacity.
7. electric capacity encapsulating structure as claimed in claim 1, it is characterized in that, this electric capacity encapsulating structure also further comprises: a conductive unit, it has at least two electric conductors, and it electrically is contacted with between the upper surface of above-mentioned at least one top layer substrate and above-mentioned at least one capacity cell respectively and is electrically connected between the lower surface and above-mentioned at least one bottom substrate of above-mentioned at least one capacity cell.
8. an electric capacity encapsulating structure is characterized in that, comprising:
One base board unit, it has at least one top layer substrate, at least one Intermediate substrate and at least one bottom substrate;
One insulation unit, it has at least one first insulating barrier and at least one second insulating barrier that is filled between above-mentioned at least one Intermediate substrate and the above-mentioned at least one bottom substrate that is filled between above-mentioned at least one top layer substrate and the above-mentioned at least one Intermediate substrate; And
One capacitor cell, it has at least one first capacity cell that is arranged at electrically between above-mentioned at least one top layer substrate and the above-mentioned at least one Intermediate substrate and is coated by above-mentioned at least one first insulating barrier and at least one second capacity cell that is arranged at electrically between above-mentioned at least one Intermediate substrate and the above-mentioned at least one bottom substrate and is coated by above-mentioned at least one second insulating barrier.
9. electric capacity encapsulating structure as claimed in claim 8, it is characterized in that, above-mentioned at least one top layer substrate, above-mentioned at least one first insulating barrier, above-mentioned at least one Intermediate substrate, above-mentioned at least one second insulating barrier and above-mentioned at least one bottom substrate from top to bottom are stacked in regular turn, and above-mentioned at least one first capacity cell and above-mentioned at least one second capacity cell are all tantalum matter electric capacity.
10. electric capacity encapsulating structure as claimed in claim 8, it is characterized in that, this electric capacity encapsulating structure also further comprises: a conductive unit, it has at least two first electric conductors and at least two second electric conductors, wherein above-mentioned at least two first electric conductors electrically are contacted with between the upper surface of above-mentioned at least one top layer substrate and above-mentioned at least one first capacity cell respectively and electrically are contacted with between the lower surface and above-mentioned at least one Intermediate substrate of above-mentioned at least one first capacity cell, and above-mentioned at least two second electric conductors electrically are contacted with respectively to reach between the upper surface of above-mentioned at least one Intermediate substrate and above-mentioned at least one second capacity cell and electrically are contacted with between the lower surface and above-mentioned at least one bottom substrate of above-mentioned at least one second capacity cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205350009U CN201804711U (en) | 2010-09-17 | 2010-09-17 | Package structure of capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205350009U CN201804711U (en) | 2010-09-17 | 2010-09-17 | Package structure of capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201804711U true CN201804711U (en) | 2011-04-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010205350009U Expired - Lifetime CN201804711U (en) | 2010-09-17 | 2010-09-17 | Package structure of capacitor |
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| CN (1) | CN201804711U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845646A (en) * | 2015-02-04 | 2016-08-10 | 智威科技股份有限公司 | Semiconductor assembly packaging structure and manufacturing method thereof |
-
2010
- 2010-09-17 CN CN2010205350009U patent/CN201804711U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845646A (en) * | 2015-02-04 | 2016-08-10 | 智威科技股份有限公司 | Semiconductor assembly packaging structure and manufacturing method thereof |
| CN105845646B (en) * | 2015-02-04 | 2018-06-05 | 智威科技股份有限公司 | semiconductor assembly packaging structure and manufacturing method thereof |
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Granted publication date: 20110420 |