CN201741726U - 多晶金属基座式发光二极管散热结构 - Google Patents

多晶金属基座式发光二极管散热结构 Download PDF

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CN201741726U
CN201741726U CN2010202375466U CN201020237546U CN201741726U CN 201741726 U CN201741726 U CN 201741726U CN 2010202375466 U CN2010202375466 U CN 2010202375466U CN 201020237546 U CN201020237546 U CN 201020237546U CN 201741726 U CN201741726 U CN 201741726U
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emitting diode
metal base
light emitting
polycrystalline metal
heat
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温耀隆
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Shanghai Zhuokai Electronic Technology Co Ltd
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Shanghai Zhuokai Electronic Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

Abstract

本实用新型提供了一种多晶金属基座式发光二极管散热结构,其包含有:一复合基板、一绝缘导热胶层、一印刷电路层、一导电导热层及一多晶金属基座式发光二极管。复合基板与印刷电路层以绝缘导热层相连结,印刷电路层与多晶金属基座式发光二极管以导电导热层相结合;藉此,组成一种多晶金属基座式发光二极管散热结构。藉由本实用新型的设计,可延长多晶金属基座式发光二极管的使用寿命以及可以防止发光二极管的光衰。

Description

多晶金属基座式发光二极管散热结构
技术领域
本实用新型有关于一种散热结构,尤其指一种多晶金属基座式发光二极管散热结构。
背景技术
为响应环保,LED灯具已渐渐取代传统灯具,而现有的LED为配合各种市场的需求,已朝向多晶封装方向发展,但其存在有散热不良或是散热不平均的问题,因而导致LED产生光衰,减少使用寿命,徒劳耗费资源。
发明内容
有鉴于此,本案创作人经过不断的研究、实验与改良,因此,如何将现有的LED散热结构的缺失加以摒除,即为本案创作人所欲解决的技术困难点之所在。
本实用新型的目的即是提供一种多晶金属基座式发光二极管散热结构,藉由本实用新型的设计,可延长多晶金属基座式发光二极管的使用寿命以及可以防止发光二极管的光衰。
可达成上述实用新型目的的多晶金属基座式发光二极管散热结构,其包含有:一复合基板、一绝缘导热胶层、一印刷电路层、一导电导热层及一多晶金属基座式发光二极管。复合基板与印刷电路层以绝缘导热层相连结,印刷电路层与多晶金属基座式发光二极管以导电导热层相结合;藉此,组成一种多晶金属基座式发光二极管散热结构。
本实用新型提供了一种多晶金属基座式发光二极管散热结构,其包含有:
一复合基板,其与一印刷电路层相结合;
一多晶金属基座式发光二极管,其通过一导电导热层与该印刷电路层相结合。
实施时,该复合基版通过一绝缘导热层与该印刷电路层相结合。
实施时,其特征在于,该导电导热层以热融方式将该多晶金属基座式发光二极管与该印刷电路层相结合。
实施时,所述热融方式是通过高周波或超音波。
实施时,该多晶金属基座式发光二极管以平均散热面积方式排列设置。
实施时,该复合基板为复合石墨材质或陶瓷材质。
实施时,该绝缘导热层的材质为玻璃纤维。
实施时,导电导热层为银胶或锡膏焊料。
经由本实用新型所采用的技术手段,藉由本实用新型的设计,多晶金属基座式发光二极管的接面热量首先由金属基座至大面积铺铜的印刷电路层均匀且快速横向导热,再均匀且快速由复合基板达到三轴快速散热的效果;使得多晶金属基座式发光二极管不仅可达到快速散热的效果,而且多晶发光二极管间,由于散热均衡,故具有一致的热电效应,因此可延长多晶金属基座式发光二极管的使用寿命以及可以防止发光二极管的光衰。
附图说明
图1为本实用新型的分解示意图;
图2为本实用新型的结合示意图;
图3为本实用新型的配置示意图;
图4为本实用新型的实施例。
附图标记说明:复合基板-1;印刷电路层-2;导电导热层-3;多晶金属基座式发光二极管-4;导线-41;绝缘导热层-5。
具体实施方式
为使贵审查员方便简捷了解本实用新型的其他特征内容与优点其所达成的功效能够更为显现,兹将本实用新型配合附图,详细说明如下:
请参考图1和图2,为本实用新型的分解示意图及结合示意图,图中表示,其包含有:一复合基板1、一印刷电路层2、一导电导热层3、一多晶金属基座式发光二极管4及一绝缘导热层5,复合基板1与印刷电路层2以绝缘导热层5相连结,印刷电路层2与多晶金属基座式发光二极管4以导电导热层3相结合,且该多晶金属基座式发光二极管4并以一导线41与印刷电路层2电气接设,该多晶金属基座式发光二极管4以平均散热面积方式排列设置于印刷电路层2上;该导电导热层3为银胶或锡膏焊料;该复合基板1为复合石墨材质或陶瓷材质;该绝缘导热层5的材质为玻璃纤维;藉此,组成一种多晶金属基座式发光二极管散热结构。
再请参考图3和图4,为本实用新型的配置示意图及实施例,如图所示,其包含有:一复合基板1、一印刷电路层2、一导电导热层3、一多晶金属基座式发光二极管4及一绝缘导热层5,复合基板1与印刷电路层2以绝缘导热层5相连结,印刷电路层2与多晶金属基座式发光二极管4以导电导热层3相结合,且该多晶金属基座式发光二极管4并以一导线41与印刷电路层2电气接设,该多晶金属基座式发光二极管4以平均设置于印刷电路层2上;藉此,组成一种多晶金属基座式发光二极管散热结构。如图3所示,该多晶金属基座式发光二极管4以平均散热面积方式排列设置于具有相等大面积铺铜的印刷电路层2上,达到各多晶金属基座式发光二极管4的第一阶段散热面积相同;使得各多晶金属基座式发光二极管4的接面热量首先由金属基座至大面积铺铜的印刷电路层2达到均匀且快速横向导热。
再请参考图4,如图所示,多晶金属基座式发光二极管4除可藉由印刷电路层2的大面积铺铜,迅速进行热传导外,亦可藉由均匀且快速由复合基板1达到第二阶段三轴快速散热的效果;使得多晶金属基座式发光二极管4不仅可达到快速散热的效果,而且多晶金属基座式发光二极管4间,由于散热均衡,故具有一致的热电效应。
但是以上所述仅为本实用新型的一较佳可行实施例,非因此即拘限本实用新型的专利范围,故举凡运用本实用新型说明书及图式内容所为的等效结构,直接或间接运用于其它相关技术领域,均同理皆理应包含于本实用新型的精神范畴的范围内,合予陈明。
本实用新型的优点:
本实用新型将多晶金属基座式发光二极管以平均散热面积方式排列设置于相等大面积铺铜的印刷电路层上,达到各多晶金属基座式发光二极管的第一阶段散热面积相同;使得各多晶金属基座式发光二极管的接面热量首先由金属基座至大面积铺铜的印刷电路层达到均匀且快速横向导热。
本实用新型可藉由均匀且快速由复合石墨基板达到第二阶段三轴快速散热的效果;使得多晶金属基座式发光二极管不仅可达到快速散热的效果,而且多晶发光二极管间,由于散热均衡,故具有一致的热电效应。藉由本实用新型的设计,可延长多晶金属基座式发光二极管的使用寿命以及可以防止发光二极管的光衰。
综上所述,本实用新型在突破先前的技术结构下,确实已达到所欲增进的功效,且也非熟悉该项技艺者所易于思及;再者,本实用新型申请前未曾公开,其所具的进步性、实用性,显已符合新型专利的申请要件,依法提出新型申请。

Claims (8)

1.一种多晶金属基座式发光二极管散热结构,其特征在于,其包含有:
一复合基板,其与一印刷电路层相结合;
一多晶金属基座式发光二极管,其通过一导电导热层与该印刷电路层相结合。
2.如权利要求1所述的多晶金属基座式发光二极管散热结构,其特征在于,该复合基版通过一绝缘导热层与该印刷电路层相结合。
3.如权利要求2所述的多晶金属基座式发光二极管散热结构,其特征在于,该导电导热层以热融方式将该多晶金属基座式发光二极管与该印刷电路层相结合。
4.如权利要求3所述的多晶金属基座式发光二极管散热结构,其特征在于,所述热融方式是通过高周波或超音波。
5.如权利要求4所述的多晶金属基座式发光二极管散热结构,其特征在于,该多晶金属基座式发光二极管以平均散热面积方式排列设置。
6.如权利要求5所述的多晶金属基座式发光二极管散热结构,其特征在于,该复合基板为复合石墨材质或陶瓷材质。
7.如权利要求6所述的多晶金属基座式发光二极管散热结构,其特征在于,该绝缘导热层的材质为玻璃纤维。
8.如权利要求7所述的多晶金属基座式发光二极管散热结构,其特征在于,导电导热层为银胶或锡膏焊料。
CN2010202375466U 2010-06-23 2010-06-23 多晶金属基座式发光二极管散热结构 Expired - Fee Related CN201741726U (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102339943A (zh) * 2010-07-22 2012-02-01 上海卓凯电子科技有限公司 多晶金属基座式发光二极管散热结构及其制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102339943A (zh) * 2010-07-22 2012-02-01 上海卓凯电子科技有限公司 多晶金属基座式发光二极管散热结构及其制造方法

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