CN201708184U - 大功率led封装结构 - Google Patents
大功率led封装结构 Download PDFInfo
- Publication number
- CN201708184U CN201708184U CN2010201739126U CN201020173912U CN201708184U CN 201708184 U CN201708184 U CN 201708184U CN 2010201739126 U CN2010201739126 U CN 2010201739126U CN 201020173912 U CN201020173912 U CN 201020173912U CN 201708184 U CN201708184 U CN 201708184U
- Authority
- CN
- China
- Prior art keywords
- electrode
- heat sink
- electrode pin
- led chip
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010201739126U CN201708184U (zh) | 2010-04-23 | 2010-04-23 | 大功率led封装结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010201739126U CN201708184U (zh) | 2010-04-23 | 2010-04-23 | 大功率led封装结构 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN201708184U true CN201708184U (zh) | 2011-01-12 |
Family
ID=43445338
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010201739126U Expired - Fee Related CN201708184U (zh) | 2010-04-23 | 2010-04-23 | 大功率led封装结构 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN201708184U (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102157507A (zh) * | 2011-01-25 | 2011-08-17 | 北京工业大学 | 一种色温和显色指数可调的白光led集成模块 |
CN108711513A (zh) * | 2018-05-18 | 2018-10-26 | 郑州云海信息技术有限公司 | 一种防止多引脚电容插反的方法及结构 |
CN108767095A (zh) * | 2018-05-24 | 2018-11-06 | 郑州森源新能源科技有限公司 | 一种led光源的制作方法 |
CN108930917A (zh) * | 2018-06-01 | 2018-12-04 | 郑州森源新能源科技有限公司 | 一种丛林照明装置的led光源 |
-
2010
- 2010-04-23 CN CN2010201739126U patent/CN201708184U/zh not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102157507A (zh) * | 2011-01-25 | 2011-08-17 | 北京工业大学 | 一种色温和显色指数可调的白光led集成模块 |
CN102157507B (zh) * | 2011-01-25 | 2013-07-24 | 北京工业大学 | 一种色温和显色指数可调的白光led集成模块封装结构 |
CN108711513A (zh) * | 2018-05-18 | 2018-10-26 | 郑州云海信息技术有限公司 | 一种防止多引脚电容插反的方法及结构 |
CN108767095A (zh) * | 2018-05-24 | 2018-11-06 | 郑州森源新能源科技有限公司 | 一种led光源的制作方法 |
CN108930917A (zh) * | 2018-06-01 | 2018-12-04 | 郑州森源新能源科技有限公司 | 一种丛林照明装置的led光源 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Weinan Yongtai mining equipment Co., Ltd. Assignor: Ji Aihua Contract record no.: 2011610000163 Denomination of utility model: High-color-rendering high-power LED (light emitting diode) encapsulation structure and manufacture method of high-color-rendering high-power LED encapsulation structure Granted publication date: 20110112 License type: Exclusive License Record date: 20110902 |
|
EC01 | Cancellation of recordation of patent licensing contract |
Assignee: Weinan Yongtai mining equipment Co., Ltd. Assignor: Ji Aihua Contract record no.: 2011610000163 Date of cancellation: 20120315 |
|
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Xi'an Heavy Equipment Manufacturing Group Weinan Optoelectronics Technology Co., Ltd. Assignor: Ji Aihua Contract record no.: 2012610000030 Denomination of utility model: High-color-rendering high-power LED (light emitting diode) encapsulation structure and manufacture method of high-color-rendering high-power LED encapsulation structure Granted publication date: 20110112 License type: Exclusive License Record date: 20120330 |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110112 Termination date: 20130423 |