CN201681920U - Multi-salient-point base island embedded type base island multi-circle pin and passive device packaging structure - Google Patents

Multi-salient-point base island embedded type base island multi-circle pin and passive device packaging structure Download PDF

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Publication number
CN201681920U
CN201681920U CN2010201848903U CN201020184890U CN201681920U CN 201681920 U CN201681920 U CN 201681920U CN 2010201848903 U CN2010201848903 U CN 2010201848903U CN 201020184890 U CN201020184890 U CN 201020184890U CN 201681920 U CN201681920 U CN 201681920U
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China
Prior art keywords
pin
dao
passive device
back side
base
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Expired - Lifetime
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CN2010201848903U
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Chinese (zh)
Inventor
王新潮
梁志忠
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JCET Group Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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Priority to CN2010201848903U priority Critical patent/CN201681920U/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The utility model relates to a multi-salient-point base island embedded type base island multi-circle pin and passive device packaging structure, comprising base islands (1), pins (2) conducting or non-conducting bonding materials (6), chips (7), metal wires (8) and packed plastic sealing materials (9), wherein the base islands are two in group, one group is first base islands (1.1), and the other group is second base islands (1.2); the front surface of each first base island (1.1) is provided with a multi-salient-point structure; and a passive device (10) is spanned between every two pins (2) or between each pin (2) and each base island (1). The pins (2) have multiple circles; packless plastic sealing materials (3) are embedded in the area at the peripheries of the pins (2), the area between the pins (2) and the first base islands (1.1), the back surfaces of the second base islands (1.2), the area between the second base islands (1.2) and the first base islands (1.1), the area between the second base islands (1.2) and the pins (2) and the area between the pins (2); and the sizes of the back surfaces of the first base islands (1.1 ) and the pins (2) are smaller than that of the front surfaces thereof. The multi-salient-point base island embedded type base island multi-circle pin and passive device packaging structure has the benefit that the bonding capability of plastic sealing bodies and metal pins is large.

Description

Multi-convex point Ji Dao and baried type base island multi-turn pin passive device encapsulating structure
(1) technical field
The utility model relates to a kind of multi-convex point Ji Dao and baried type base island multi-turn pin passive device encapsulating structure.Belong to the semiconductor packaging field.
(2) background technology
Traditional encapsulating structure mainly contains two kinds:
First kind: after chemical etching and surface electrical coating are carried out in the front of employing metal substrate, stick the resistant to elevated temperatures glued membrane of one deck at the back side of metal substrate and form the leadframe carrier (as shown in Figure 3) that to carry out encapsulation process;
Second kind: after chemical etching and surface electrical coating are carried out in the front of employing metal substrate, promptly finish the making (as shown in Figure 4) of lead frame.Back etched is then carried out at the back side of lead frame again in encapsulation process.
And the not enough point of two kinds of above-mentioned lead frames below in encapsulation process, having existed:
First kind:
1) but the lead frame of this kind must stick the glued membrane of one deck costliness high temperature resistance because of the back side.So directly increased high cost.
2) but also because the glued membrane of one deck high temperature resistance must be sticked in the back side of the lead frame of this kind, so the load technology in encapsulation process can only be used conduction or nonconducting resin technology, and the technology that can not adopt eutectic technology and slicken solder is fully carried out load, so selectable product category just has bigger limitation.
3) but again because the glued membrane of one deck high temperature resistance must be sticked in the back side of the lead frame of this kind, and in the ball bonding bonding technology in encapsulation process, because but the glued membrane of this high temperature resistance is a soft materials, so caused the instability of ball bonding bonding parameter, seriously influenced the quality of ball bonding and the stability of production reliability.
4) but again because the glued membrane of one deck high temperature resistance must be sticked in the back side of the lead frame of this kind, and the plastic package process process in encapsulation process, because the high pressure of plastic packaging relation is easy to cause between lead frame and the glued membrane and infiltrates plastic packaging material, be that the kenel of conduction has become insulation pin (as shown in Figure 5) on the contrary because of having infiltrated plastic packaging material and will formerly should belong to metal leg.
Second kind:
The lead frame structure of this kind has carried out etching partially technology in the metal substrate front, though can solve the problem of first kind of lead frame, but because only carried out the work that etches partially in the metal substrate front, and plastic packaging material only envelopes the height of half pin in the plastic packaging process, so the constraint ability of plastic-sealed body and metal leg has just diminished, when if the plastic-sealed body paster is not fine to pcb board, does over again again and heavily paste, with regard to the problem (as shown in Figure 6) that is easy to generate pin.
Especially the kind of plastic packaging material is to adopt when filler is arranged, because material is at the environment and the follow-up surface-pasted stress changing relation of production process, can cause metal and plastic packaging material to produce the crack of vertical-type, its characteristic is the high more then hard more crisp more crack that is easy to generate more of proportion of filler.
(3) summary of the invention
The purpose of this utility model is to overcome above-mentioned deficiency, provides a kind of and reduces that packaging cost, selectable product category are wide, the big encapsulating structure of constraint ability of good stability, plastic-sealed body and the metal leg of the quality of ball bonding and production reliability.
The purpose of this utility model is achieved in that a kind of multi-convex point Ji Dao and baried type base island multi-turn pin passive device encapsulating structure, comprise Ji Dao, pin, conduction or non-conductive bonding material, chip, metal wire and the filler plastic packaging material arranged, described Ji Dao has two groups, one group is first Ji Dao, another group is second Ji Dao, multi-convex point shape structure is arranged in front, the described first basic island, at described first Ji Dao, the front of second Ji Dao and pin is provided with the first metal layer, the back side at described first Ji Dao and pin is provided with second metal level, be provided with chip in front, basic island by conduction or non-conductive bonding material, all be connected between chip front side and the pin front the first metal layer and between chip and the chip with metal wire, in cross-over connection between pin and the pin or between pin and the basic island passive device is arranged, top and chip at described Ji Dao and pin, metal wire and passive device are encapsulated with the filler plastic packaging material outward, described pin is provided with multi-turn, zone in described pin periphery, zone between the pin and the first basic island, the second Ji Dao back side, zone between second Ji Dao and the first basic island, no filler plastic packaging material is set in zone between zone between second Ji Dao and the pin and pin and the pin, described no filler plastic packaging material is with periphery, pin bottom, the pin and the first Ji Dao bottom, the second Ji Dao back side, the second Ji Dao back side and the first Ji Dao bottom, the second Ji Dao back side and pin bottom and pin and pin bottom link into an integrated entity, and make described first Ji Dao and pin back side size less than first Ji Dao and the positive size of pin, form up big and down small first Ji Dao and pin configuration.
The beneficial effects of the utility model are:
1) but the glued membrane of one deck costliness high temperature resistance need not sticked in the back side of the lead frame of this kind.So directly reduced high cost.
2) but because the glued membrane of one deck high temperature resistance need not sticked in the back side of the lead frame of this kind yet, so the load technology in encapsulation process is except using conduction or nonconducting resin technology, can also adopt the technology of eutectic technology and slicken solder to carry out load, so selectable product category is just wide.
3) but again because the glued membrane of one deck high temperature resistance need not sticked in the back side of the lead frame of this kind, guaranteed the stability of ball bonding bonding parameter, guaranteed the quality of ball bonding and the stability of production reliability.
4) but again because the lead frame of this kind need not stick the glued membrane of one deck high temperature resistance, and the plastic package process process in encapsulation process can not cause between lead frame and the glued membrane fully and infiltrate plastic packaging material.
5) because the soft gap filler of no filler is set in the zone between described metal leg (pin) and metal leg, this packless soft gap filler has the filler plastic packaging material to envelope the height of whole metal leg with the routine in the plastic packaging process, so the constraint ability of plastic-sealed body and metal leg just becomes big, do not have the problem that produces pin again.
6) owing to adopted positive method of separating the etching operation with the back side, so in the etching operation, can form the slightly little and big slightly structure of positive basic island size of the size of back side Ji Dao, and with the size that varies in size up and down of a Ji Dao by tighter more difficult generation slip that no filler plastic packaging material coated and fall pin.
(4) description of drawings
Fig. 1 is the utility model multi-convex point Ji Dao and baried type base island multi-turn pin passive device encapsulating structure schematic diagram.
Fig. 2 is the vertical view of Fig. 1.
Fig. 3 was for sticked the resistant to elevated temperatures glued membrane figure of one deck operation in the past at the back side of metal substrate.
Fig. 4 was for to adopt the front of metal substrate to carry out chemical etching and surface electrical coating flow diagram in the past.
Fig. 5 was for formed insulation pin schematic diagram in the past.
Fig. 6 pin figure for what formed in the past.
Reference numeral among the figure:
Base island 1.1, the second basic island 1.2,1, the first basic island, pin 2, no filler plastic packaging material 3, the first metal layer 4, second metal level 5, conduction or non-conductive bonding material 6, chip 7, metal wire 8, filler plastic packaging material 9, passive device 10 are arranged.
(5) embodiment
Referring to Fig. 1～2, Fig. 1 is the utility model multi-convex point Ji Dao and baried type base island multi-turn pin passive device encapsulating structure schematic diagram.Fig. 2 is the vertical view of Fig. 1.By Fig. 1 and Fig. 2 as can be seen, the utility model multi-convex point Ji Dao and baried type base island multi-turn pin passive device encapsulating structure, comprise basic island 1, pin 2, conduction or non-conductive bonding material 6, chip 7, metal wire 8 and filler plastic packaging material 9 is arranged, described basic island 1 has two groups, one group is the first basic island 1.1, another group is the second basic island 1.2, multi-convex point shape structure is arranged in 1.1 fronts, the described first basic island, on the described first basic island 1.1, the front of the second basic island 1.2 and pin 2 is provided with the first metal layer 4, the back side at the described first basic island 1.1 and pin 2 is provided with second metal level 5, be provided with chip 7 in 1 front, basic island by conduction or non-conductive bonding material 6, chip 7 positive with pin 2 front the first metal layers 4 between and all be connected between chip 7 and the chip 7 with metal wire 8, in cross-over connection between pin 2 and the pin 2 or between pin 2 and the basic island 1 passive device 10 is arranged, top and chip 7 at described basic island 1 and pin 2, metal wire 8 and the passive device 10 outer filler plastic packaging materials 9 that are encapsulated with, described pin 2 is provided with multi-turn, zone in described pin 2 peripheries, zone between the pin 2 and the first basic island 1.1,1.2 back sides, the second basic island, zone between the second basic island 1.2 and the first basic island 1.1, no filler plastic packaging material 3 is set in zone and the zone between pin and the pin between the second basic island 1.2 and the pin 2, described no filler plastic packaging material 3 is with periphery, pin bottom, pin 2 and 1.1 bottoms, the first basic island, 1.2 back sides, the second basic island, second 1.2 back sides, basic island and 1.1 bottoms, the first basic island, second 1.2 back sides, basic island and pin 2 bottoms and pin 2 link into an integrated entity with pin 2 bottoms, and make the described first basic island 1.1 and pin 2 back side sizes less than the first basic island 1.1 and pin 2 positive sizes, form up big and down small first Ji Dao and pin configuration.

Claims (1)

1. multi-convex point Ji Dao and baried type base island multi-turn pin passive device encapsulating structure, comprise Ji Dao (1), pin (2), conduction or non-conductive bonding material (6), chip (7), metal wire (8) and filler plastic packaging material (9) is arranged, described Ji Dao (1) has two groups, one group is first Ji Dao (1.1), another group is second Ji Dao (1.2), described first Ji Dao (1.1) is arranged to multi-convex point shape structure in the front, at described first Ji Dao (1.1), the front of second Ji Dao (1.2) and pin (2) is provided with the first metal layer (4), the back side at described first Ji Dao (1.1) and pin (2) is provided with second metal level (5), be provided with chip (7) in Ji Dao (1) front by conduction or non-conductive bonding material (6), chip (7) positive with pin (2) front the first metal layer (4) between and all use metal wire (8) to be connected between chip (7) and the chip (7), in cross-over connection between pin (2) and the pin (2) or between pin (2) and the Ji Dao (1) passive device (10) is arranged, top and chip (7) at described Ji Dao (1) and pin (2), the outer filler plastic packaging material (9) that is encapsulated with of metal wire (8) and passive device (10), it is characterized in that: described pin (2) is provided with multi-turn, in the peripheral zone of described pin (2), zone between pin (2) and first Ji Dao (1.1), second Ji Dao (1.2) back side, zone between second Ji Dao (1.2) and first Ji Dao (1.1), no filler plastic packaging material (3) is set in zone and the zone between pin and the pin between second Ji Dao (1.2) and the pin (2), described no filler plastic packaging material (3) is with periphery, pin bottom, pin (2) and first Ji Dao (1.1) bottom, second Ji Dao (1.2) back side, second Ji Dao (1.2) back side and first Ji Dao (1.1) bottom, second Ji Dao (1.2) back side and pin (2) bottom and pin (2) link into an integrated entity with pin (2) bottom, and make described first Ji Dao (1.1) and pin (2) back side size less than first Ji Dao (1.1) and the positive size of pin (2), form up big and down small first Ji Dao and pin configuration.
CN2010201848903U 2010-05-05 2010-05-05 Multi-salient-point base island embedded type base island multi-circle pin and passive device packaging structure Expired - Lifetime CN201681920U (en)

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Application Number Priority Date Filing Date Title
CN2010201848903U CN201681920U (en) 2010-05-05 2010-05-05 Multi-salient-point base island embedded type base island multi-circle pin and passive device packaging structure

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Granted publication date: 20101222