CN201681902U - Substrate-exposed and sunken-substrate-exposed type packaging structure with multiple circles of pins - Google Patents

Substrate-exposed and sunken-substrate-exposed type packaging structure with multiple circles of pins Download PDF

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Publication number
CN201681902U
CN201681902U CN2010201847455U CN201020184745U CN201681902U CN 201681902 U CN201681902 U CN 201681902U CN 2010201847455 U CN2010201847455 U CN 2010201847455U CN 201020184745 U CN201020184745 U CN 201020184745U CN 201681902 U CN201681902 U CN 201681902U
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CN
China
Prior art keywords
pin
dao
substrate
pins
plastic packaging
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Expired - Lifetime
Application number
CN2010201847455U
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Chinese (zh)
Inventor
王新潮
梁志忠
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JCET Group Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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Priority to CN2010201847455U priority Critical patent/CN201681902U/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Abstract

The utility model relates to a substrate-exposed type and sunken-substrate-exposed type packaging structure with multiple circles of pins, which comprises substrates (1), multiple circles of pins, conducting or non-conducting bonding substances, a chip (7), a metal wire (8) and packing plastic packaging materials (9). The substrates (1) are divided into two groups, one group is a first substrate (1.1) while the other group is a second substrate (1.2), the central area of the front surface of the second substrate (1.2) is sunken, a first metal layer (4) is arranged on front surfaces of the first substrate (1.1) and the pins (2), a second metal layer (5) is disposed on back surfaces of the first substrate (1.1), the second substrate (1.2) and the pins (2), packless plastic packaging materials (3) are embedded at peripheral areas of the pins (2), areas among the pins (2) and the first substrate (1.1), an area between the first substrate (1.1) and the second substrate (1.2), areas among the second substrate (1.2) and the pins (2) and areas among the pins (2), and sizes of the back surfaces of the substrates (1) and the pins (2) are larger than those of the front surfaces of the substrates (1) and the pins (2). Plastic packaging bodies and metal pins have large binding capacity.

Description

The base island exposed type and the base island exposed type multi-turn leaded package that sinks
(1) technical field
The utility model relates to a kind of base island exposed type and sinks base island exposed type multi-turn leaded package.Belong to the semiconductor packaging field.
(2) background technology
Traditional encapsulating structure mainly contains two kinds:
First kind: after chemical etching and surface electrical coating are carried out in the front of employing metal substrate, stick the resistant to elevated temperatures glued membrane of one deck at the back side of metal substrate and form the leadframe carrier (as shown in Figure 3) that to carry out encapsulation process;
Second kind: after chemical etching and surface electrical coating are carried out in the front of employing metal substrate, promptly finish the making (as shown in Figure 4) of lead frame.Back etched is then carried out at the back side of lead frame again in encapsulation process.
And the not enough point of two kinds of above-mentioned lead frames below in encapsulation process, having existed:
First kind:
1) but the lead frame of this kind must stick the glued membrane of one deck costliness high temperature resistance because of the back side.So directly increased high cost.
2) but also because the glued membrane of one deck high temperature resistance must be sticked in the back side of the lead frame of this kind, so the load technology in encapsulation process can only be used conduction or nonconducting resin technology, and the technology that can not adopt eutectic technology and slicken solder is fully carried out load, so selectable product category just has bigger limitation.
3) but again because the glued membrane of one deck high temperature resistance must be sticked in the back side of the lead frame of this kind, and in the ball bonding bonding technology in encapsulation process, because but the glued membrane of this high temperature resistance is a soft materials, so caused the instability of ball bonding bonding parameter, seriously influenced the quality of ball bonding and the stability of production reliability.
4) but again because the glued membrane of one deck high temperature resistance must be sticked in the back side of the lead frame of this kind, and the plastic package process process in encapsulation process, because the high pressure of plastic packaging relation is easy to cause between lead frame and the glued membrane and infiltrates plastic packaging material, be that the kenel of conduction has become insulation pin (as shown in Figure 5) on the contrary because of having infiltrated plastic packaging material and will formerly should belong to metal leg.
Second kind:
The lead frame structure of this kind has carried out etching partially technology in the metal substrate front, though can solve the problem of first kind of lead frame, but because only carried out the work that etches partially in the metal substrate front, and plastic packaging material only envelopes the height of half pin in the plastic packaging process, so the constraint ability of plastic-sealed body and metal leg has just diminished, when if the plastic-sealed body paster is not fine to pcb board, does over again again and heavily paste, with regard to the problem (as shown in Figure 6) that is easy to generate pin.
Especially the kind of plastic packaging material is to adopt when filler is arranged, because material is at the environment and the follow-up surface-pasted stress changing relation of production process, can cause metal and plastic packaging material to produce the crack of vertical-type, its characteristic is the high more then hard more crisp more crack that is easy to generate more of proportion of filler.
(3) summary of the invention
The purpose of this utility model is to overcome above-mentioned deficiency, provides a kind of and reduces that packaging cost, selectable product category are wide, the big base island exposed type and the base island exposed type multi-turn leaded package that sinks of constraint ability of good stability, plastic-sealed body and the metal leg of the quality of ball bonding and production reliability.
The purpose of this utility model is achieved in that a kind of base island exposed type and sinks base island exposed type multi-turn leaded package, comprise Ji Dao, pin, conduction or non-conductive bonding material, chip, metal wire and the filler plastic packaging material arranged, described Ji Dao has two groups, one group is first Ji Dao, another group is second Ji Dao, front, described second basic island middle section sinks, front at described first Ji Dao and pin is provided with the first metal layer, at described first Ji Dao, the back side of second Ji Dao and pin is provided with second metal level, be provided with chip in positive central sunken regions in the second basic island and front, the first basic island by conduction or non-conductive bonding material, all be connected between chip front side and the pin front the first metal layer and between chip and the chip with metal wire, outside the top of described Ji Dao and pin and chip and metal wire, be encapsulated with the filler plastic packaging material, described pin is provided with multi-turn, zone in described pin periphery, zone between the pin and the first basic island, zone between first Ji Dao and the second basic island, no filler plastic packaging material is set in zone between zone between second Ji Dao and the pin and pin and the pin, described no filler plastic packaging material is with periphery, pin bottom, the pin and the first Ji Dao bottom, first Ji Dao and the second Ji Dao bottom, second Ji Dao and pin bottom and pin and pin bottom link into an integrated entity, and make described Ji Dao and pin back side size less than Ji Dao and the positive size of pin, form up big and down small Ji Dao and pin configuration.
The beneficial effects of the utility model are:
1) but the glued membrane of one deck costliness high temperature resistance need not sticked in the back side of the lead frame of this kind.So directly reduced high cost.
2) but because the glued membrane of one deck high temperature resistance need not sticked in the back side of the lead frame of this kind yet, so the load technology in encapsulation process is except using conduction or nonconducting resin technology, can also adopt the technology of eutectic technology and slicken solder to carry out load, so selectable product category is just wide.
3) but again because the glued membrane of one deck high temperature resistance need not sticked in the back side of the lead frame of this kind, guaranteed the stability of ball bonding bonding parameter, guaranteed the quality of ball bonding and the stability of production reliability.
4) but again because the lead frame of this kind need not stick the glued membrane of one deck high temperature resistance, and the plastic package process process in encapsulation process can not cause between lead frame and the glued membrane fully and infiltrate plastic packaging material.
5) because the soft gap filler of no filler is set in the zone between described metal leg (pin) and metal leg, this packless soft gap filler has the filler plastic packaging material to envelope the height of whole metal leg with the routine in the plastic packaging process, so the constraint ability of plastic-sealed body and metal leg just becomes big, do not have the problem that produces pin again.
6) owing to adopted positive method of separating the etching operation with the back side, so in the etching operation, can form the slightly little and big slightly structure of positive basic island size of the size of back side Ji Dao, and with the size that varies in size up and down of a Ji Dao by tighter more difficult generation slip that no filler plastic packaging material coated and fall pin.
(4) description of drawings
Fig. 1 is the base island exposed type of the utility model and the base island exposed type multi-turn leaded package schematic diagram that sinks.
Fig. 2 is the vertical view of Fig. 1.
Fig. 3 was for sticked the resistant to elevated temperatures glued membrane figure of one deck operation in the past at the back side of metal substrate.
Fig. 4 was for to adopt the front of metal substrate to carry out chemical etching and surface electrical coating flow diagram in the past.
Fig. 5 was for formed insulation pin schematic diagram in the past.
Fig. 6 pin figure for what formed in the past.
Reference numeral among the figure:
Base island 1.1, the second basic island 1.2,1, the first basic island, pin 2, no filler plastic packaging material 3, the first metal layer 4, second metal level 5, conduction or non-conductive bonding material 6, chip 7, metal wire 8, filler plastic packaging material 9 is arranged.
(5) embodiment
Referring to Fig. 1～2, Fig. 1 is the base island exposed type of the utility model and the base island exposed type multi-turn leaded package schematic diagram that sinks.Fig. 2 is the vertical view of Fig. 1.By Fig. 1 and Fig. 2 as can be seen, the base island exposed type of the utility model and the base island exposed type multi-turn leaded package that sinks, comprise basic island 1, pin 2, conduction or non-conductive bonding material 6, chip 7, metal wire 8 and filler plastic packaging material 9 is arranged, described basic island 1 has two groups, one group is the first basic island 1.1, another group is the second basic island 1.2, the described second basic island 1.2 front middle sections sink, front at the described first basic island 1.1 and pin 2 is provided with the first metal layer 4, on the described first basic island 1.1, the back side of the second basic island 1.2 and pin 2 is provided with second metal level 5, be provided with chip 7 in the second basic island 1.2 positive central sunken regions and 1.1 fronts, a basic island by conduction or non-conductive bonding material 6, chip 7 positive with pin 2 front the first metal layers 4 between and all be connected between chip 7 and the chip 7 with metal wire 8, outside the top of described basic island 1 and pin 2 and chip 7 and metal wire 8, be encapsulated with filler plastic packaging material 9, described pin 2 is provided with multi-turn, zone in described pin 2 peripheries, zone between the pin 2 and the first basic island 1.1, zone between the first basic island 1.1 and the second basic island 1.2, no filler plastic packaging material 3 is set in zone between the second basic island 1.2 and the pin 2 and the zone between pin 2 and the pin 2, described no filler plastic packaging material 3 is with periphery, pin bottom, pin 2 and 1.1 bottoms, the first basic island, the first basic island 1.1 and 1.2 bottoms, the second basic island, the second basic island 1.2 links into an integrated entity with pin 2 bottoms with pin 2 bottoms and pin 2, and make described basic island 1 and pin 2 back side sizes less than basic island 1 and pin 2 positive sizes, form up big and down small Ji Dao and pin configuration.

Claims (1)

1. a base island exposed type and the base island exposed type multi-turn leaded package that sinks, comprise Ji Dao (1), pin (2), conduction or non-conductive bonding material (6), chip (7), metal wire (8) and filler plastic packaging material (9) is arranged, described Ji Dao (1) has two groups, one group is first Ji Dao (1.1), another group is second Ji Dao (1.2), described second Ji Dao (1.2) front middle section sinks, front at described first Ji Dao (1.1) and pin (2) is provided with the first metal layer (4), at described first Ji Dao (1.1), the back side of second Ji Dao (1.2) and pin (2) is provided with second metal level (5), be provided with chip (7) in positive central sunken regions of second Ji Dao (1.2) and first Ji Dao (1.1) front by conduction or non-conductive bonding material (6), chip (7) positive with pin (2) front the first metal layer (4) between and all use metal wire (8) to be connected between chip (7) and the chip (7), outside the top of described Ji Dao (1) and pin (2) and chip (7) and metal wire (8), be encapsulated with filler plastic packaging material (9), it is characterized in that: described pin (2) is provided with multi-turn, in the peripheral zone of described pin (2), zone between pin (2) and first Ji Dao (1.1), zone between first Ji Dao (1.1) and second Ji Dao (1.2), no filler plastic packaging material (3) is set in zone between zone between second Ji Dao (1.2) and the pin (2) and pin (2) and the pin (2), described no filler plastic packaging material (3) is with periphery, pin bottom, pin (2) and first Ji Dao (1.1) bottom, first Ji Dao (1.1) and second Ji Dao (1.2) bottom, second Ji Dao (1.2) links into an integrated entity with pin (2) bottom with pin (2) bottom and pin (2), and make described Ji Dao (1) and pin (2) back side size less than Ji Dao (1) and the positive size of pin (2), form up big and down small Ji Dao and pin configuration.
CN2010201847455U 2010-05-05 2010-05-05 Substrate-exposed and sunken-substrate-exposed type packaging structure with multiple circles of pins Expired - Lifetime CN201681902U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010201847455U CN201681902U (en) 2010-05-05 2010-05-05 Substrate-exposed and sunken-substrate-exposed type packaging structure with multiple circles of pins

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010201847455U CN201681902U (en) 2010-05-05 2010-05-05 Substrate-exposed and sunken-substrate-exposed type packaging structure with multiple circles of pins

Publications (1)

Publication Number Publication Date
CN201681902U true CN201681902U (en) 2010-12-22

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Country Status (1)

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Granted publication date: 20101222