CN201670872U - Rectangular plane magnetic control target - Google Patents

Rectangular plane magnetic control target Download PDF

Info

Publication number
CN201670872U
CN201670872U CN2010201863513U CN201020186351U CN201670872U CN 201670872 U CN201670872 U CN 201670872U CN 2010201863513 U CN2010201863513 U CN 2010201863513U CN 201020186351 U CN201020186351 U CN 201020186351U CN 201670872 U CN201670872 U CN 201670872U
Authority
CN
China
Prior art keywords
magnetic control
rectangular plane
target
plane magnetic
control target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2010201863513U
Other languages
Chinese (zh)
Inventor
黄国兴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HARTEC TECHNOLOGY (KUNSHAN) Co Ltd
Original Assignee
HARTEC TECHNOLOGY (KUNSHAN) Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HARTEC TECHNOLOGY (KUNSHAN) Co Ltd filed Critical HARTEC TECHNOLOGY (KUNSHAN) Co Ltd
Priority to CN2010201863513U priority Critical patent/CN201670872U/en
Application granted granted Critical
Publication of CN201670872U publication Critical patent/CN201670872U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Abstract

The utility model discloses a rectangular plane magnetic control target, which comprises a target material body, and is characterized in that the two ends of the target material body are indented inward to form an avoidance step. The utility model relates to the technical field of a sputter coating device, in particular to an improved rectangular plane magnetic control target structure. The utility model solves the problem that during the existing magnetic control process of the sputter coating film, neutral target atom (or molecule) is easy to deposit between the cathode and the anode of the rectangular plane magnetic control target to cause the short circuit. The utility model effectively increases the distance between the cathode and the anode of the rectangular plane magnetic control target through the avoidance step formed by the inward indenting in the target, can avoid that a conductive film is formed between the cathode and the anode of the rectangular plane magnetic control target, saves the power cost and the device downtime caused by frequent maintenance of the target material and improves production efficiency.

Description

Rectangular plane magnetic control target
Technical field
The utility model relates to the sputtering coating equipment technical field, particularly relates to a kind of follow-on rectangular plane magnetic control target structure.
Background technology
At present, the application of thin film technique has spreaded all over the national economy every field.Prepare at home in the plated film field, usually the main flow of magnetron sputtering as sputtering technology, its major cause is exactly " at a high speed ", " low temperature " characteristics of magnetron sputtering, and it can deposit the film of any plating material on any base material.The rectangular plane magnetic control target that existing market is used, as depicted in figs. 1 and 2, the target surface of rectangular plane magnetic control target is in the orthogonal magnetic field, and field direction is parallel with target surface, forms the toroidal magnetic field.After loading certain volts DS between anode and the negative electrode, just produce discharge, the negative electrode of the target body 1 of discharge generation argon ion bombardment rectangular plane magnetic control target, the target of sputter deposits on the substrate, forms film.But in actual use; target generation sputter; in sputtering particle; neutral target atom (or molecule) is being deposited on the film forming while on the substrate; also very easily be deposited between the anode of rectangular plane magnetic control target and negative electrode and form conductive film; cause the generation of short circuit phenomenon, cause unnecessary shutdown maintenance in process of production, and in maintenance process, consume a large amount of labour costs and equipment cost.
The utility model content
In order to solve in the existing magnetron sputtering thin-film process, neutral target atom (or molecule) is deposited on easily simultaneously between the anode of rectangular plane magnetic control target and negative electrode and forms conductive film, the problem that causes short circuit phenomenon to take place, it is a kind of simple in structure that the utility model provides, can increase target and anode spacing from rectangular plane magnetic control target.
In order to achieve the above object, the technical scheme that the utility model adopted is:
A kind of rectangular plane magnetic control target comprises the target body, it is characterized in that: be recessed to form in the inward at both ends of target body and dodge step.
The beneficial effects of the utility model are: rectangular plane magnetic control target sunken inside of the present utility model forms dodges step; rectangular plane magnetic control target target cathode and positive interpolar distance have effectively been increased; can avoid forming conductive film between rectangular plane magnetic control target anode and negative electrode; save power cost and the equipment downtime paid because of the frequent maintenance target, improved production efficiency.
Description of drawings
Fig. 1 is the structural representation of prior art rectangular plane magnetic control target;
Fig. 2 is the structural representation of prior art magnetic control sputtering device;
Fig. 3 is the structural representation of the utility model rectangular plane magnetic control target;
Fig. 4 is the structural representation of the utility model magnetic control sputtering device.
Embodiment
Below in conjunction with accompanying drawing the utility model is further described.
Shown in Fig. 3 and 4, a kind of rectangular plane magnetic control target comprises target body 2, is recessed to form in the inward at both ends of target body 2 and dodges step 3, effectively increased rectangular plane magnetic control target target cathode and positive interpolar distance, avoided forming conductive film between rectangular plane magnetic control target anode and negative electrode.
Show and described ultimate principle of the present utility model and principal character and advantage of the present utility model.The technician of the industry should understand; the utility model is not restricted to the described embodiments; that describes in the foregoing description and the specification sheets just illustrates principle of the present utility model; under the prerequisite that does not break away from the utility model spirit and scope; the utility model also has various changes and modifications, and these changes and improvements all fall in claimed the utility model scope.The claimed scope of the utility model is defined by appending claims and equivalent thereof.

Claims (1)

1. a rectangular plane magnetic control target comprises the target body, it is characterized in that: be recessed to form in the inward at both ends of target body and dodge step.
CN2010201863513U 2010-05-11 2010-05-11 Rectangular plane magnetic control target Expired - Fee Related CN201670872U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010201863513U CN201670872U (en) 2010-05-11 2010-05-11 Rectangular plane magnetic control target

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010201863513U CN201670872U (en) 2010-05-11 2010-05-11 Rectangular plane magnetic control target

Publications (1)

Publication Number Publication Date
CN201670872U true CN201670872U (en) 2010-12-15

Family

ID=43328284

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010201863513U Expired - Fee Related CN201670872U (en) 2010-05-11 2010-05-11 Rectangular plane magnetic control target

Country Status (1)

Country Link
CN (1) CN201670872U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101928925A (en) * 2010-05-11 2010-12-29 赫得纳米科技(昆山)有限公司 Rectangular plane magnetic control target

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101928925A (en) * 2010-05-11 2010-12-29 赫得纳米科技(昆山)有限公司 Rectangular plane magnetic control target

Similar Documents

Publication Publication Date Title
CN201598329U (en) Twin-target magnetron sputtering device provided with gas ion sources
CN101877372B (en) Back electrode film of thin film solar cell
CN209836293U (en) High-efficiency magnetron sputtering planar cathode
CN107681214A (en) A kind of lithium-ion electric core mends lithium method
CN201670872U (en) Rectangular plane magnetic control target
CN201534876U (en) Planar magnetic control sputtering device
CN204803398U (en) Improve structure of magnetron sputtering target utilization ratio
CN103647085A (en) Lithium ion battery negative current collector material and preparation method thereof
CN206736351U (en) A kind of rectangle magnetic control sputtering cathode of high target utilization ratio
CN101928925A (en) Rectangular plane magnetic control target
CN102568977B (en) Method for preparing metallized carbon nanotube cathode by electrophoretic deposition in assistance of magnetic field
CN201620189U (en) Target-pair magnetron sputtering device
CN204589290U (en) A kind of arc ions vacuum plating unit bias voltage supplementary unit
CN203683652U (en) Magnetron sputtering plating device
CN105514267A (en) Low-power-consumption memristor based on amorphous SiC thin-film and preparation method thereof
CN103060761A (en) Sputter coating device for generating transparent conductive thin film on graphene film
CN207352983U (en) A kind of equipment of assemble nanometer bead
CN209974874U (en) Rectangular magnetron sputtering cathode with high target material utilization rate
CN202246934U (en) Shielding device of electrodeposited copper foil anode plate
CN202786408U (en) Coating equipment
CN202688425U (en) Target for magnetron sputtering coating of flexible substrate
CN209974873U (en) Cathode with high field intensity and high target utilization rate
CN209636362U (en) A kind of scan-type electro-deposition processing unit (plant) that multi-thread anode is arranged parallel
CN101935822A (en) Rectangular planar magnetic control target with alternate electromagnetic field
CN203212630U (en) Low-temperature deposition device for TCO transparent conductive film

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20101215

Termination date: 20180511