CN202688425U - Target for magnetron sputtering coating of flexible substrate - Google Patents
Target for magnetron sputtering coating of flexible substrate Download PDFInfo
- Publication number
- CN202688425U CN202688425U CN 201220353069 CN201220353069U CN202688425U CN 202688425 U CN202688425 U CN 202688425U CN 201220353069 CN201220353069 CN 201220353069 CN 201220353069 U CN201220353069 U CN 201220353069U CN 202688425 U CN202688425 U CN 202688425U
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- target
- backboard
- magnetron sputtering
- sputtering
- upper level
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Abstract
The utility model relates to a target for magnetron sputtering coating, in particular to a medium-frequency (MF) magnetron sputtering target for forming a dielectric film. The target comprises a backboard. A raised strip-type part is arranged on the upper surface of the backboard. The target on the backboard is connected with the backboard through an adhesive layer. In a sputtering coating process, bound material sputtering caused by factors such as local high temperature is effectively blocked by the raised strip-type part on the middle backboard of the target. According to the technical scheme, the yield of a sputtering-coated finished product is greatly improved, and the utilization rate of the target is increased.
Description
Technical field
The utility model relates to a kind of for the magnetron sputtering plating target, relates in particular to a kind of MF magnetron sputtering target that forms deielectric-coating.
Background technology
Sputter is one of major technique of preparation thin-film material, the ion that it utilizes ion source to produce, assemble through accelerating in a vacuum, and form at a high speed the ion beam current of high energy, bombardment solid surface, ion and solid surface atom generation exchange of kinetic energy, make the atom of solid surface leave solid and be deposited on substrate surface, the solid that is bombarded is with the starting material of sputtering method deposit film, is called sputtering target material.
Magnetron sputtering changes the direction of motion of electronics with magnetic field, and fetters and prolong the movement locus of electronics, thereby has improved the ionization probability and the energy that has effectively utilized electronics of electron pair working gas.Therefore, it is more effective to make positive ion bombard caused target as sputter to target.Simultaneously, be subjected to the electronics of crossed electric and magnetic field constraint, can only when its energy will exhaust, just be deposited on the substrate again.Here it is, and magnetron sputtering has " low temperature ", the reason of " at a high speed " two large characteristics.The magnetron sputtering mode mainly contains the DC magnetron sputtering, RF magnetron sputtering, MF magnetron sputtering.DC magnetron sputtering and the RF/MF magnetron sputtering key distinction are: DC is used for the metal targets sputter, and RF/MF is used for metal targets, medium target.
At present, be used for the used target of flexible parent metal (such as PET) surface sputtering plated film, mainly contain rectangle target and cylinder shape target.The rectangular target equipment structure is the raising target utilization as shown in Figure 2, and target is divided into two portions above the backboard, and namely target places in the electromagnetic field scope.The intercalary deletion part does not affect electromagnetic field and distributes.Employing is during by the rectangle target sputtering thin film of metal (such as indium) binding, because the target surface temperature is higher in the magnetron sputtering process, causing the nation of comparatively high temps to decide material without barrier structure in the middle of two portions target partly is exposed in the vacuum chamber, the indium splash was to the flexible parent metal surface in the middle of the too high phenomenon of accidental target local temperature caused the rectangle target in the sputter procedure, cause the flexible parent metal surface to contain particulate state indium point, this indium point is very high in visible-range internal reflection rate, causes flexible parent metal plated film good article rate to descend.
Summary of the invention
In order to overcome defects, the purpose of this utility model be to provide a kind of minimizing by the fixed target of indium nation to base material splash indium, that improves the plated film good article rate is used for flexible parent metal magnetron sputtering plating target.
In order to achieve the above object, the utility model adopts following technical scheme:
A kind of it comprises backboard for flexible parent metal magnetron sputtering plating target, and the upper surface of described backboard has a protruding strip part, and the target on the described backboard links to each other with backboard by adhesive linkage, and protruding strip part does not affect electromagnetic field and distributes and ionization speed.
The adhesive linkage upper level is identical with above-mentioned protruding strip part upper level.
The adhesive linkage upper level is lower than above-mentioned protruding strip part upper level.
The beneficial effects of the utility model:
In the sputter coating process, target intermediate back-plate material projection strip part stops that effectively this technical scheme has greatly improved sputter coating finished product yield and improved target utilization because the nation that the factors such as localized hyperthermia cause decides the material splash.
Description of drawings
Fig. 1 is the structural representation of the utility model side-looking angle.
Fig. 2 is the structural representation of the utility model depression angle.
Embodiment
Be elaborated below in conjunction with accompanying drawing 1,2 pairs of the utility model:
A kind of it comprises backboard 3 for flexible parent metal magnetron sputtering plating target, and the upper surface of described backboard 3 has a protruding strip part, and the target 1 on the described backboard 3 links to each other with backboard 3 by adhesive linkage 2.
Adhesive linkage 2 upper level are identical with above-mentioned protruding strip part upper level.Adhesive linkage 2 upper level are lower than above-mentioned protruding strip part upper level.
Adhesive linkage adopts the higher material of fusing point, such as the conductive adhesive mode, and the indium bonding way, this adhesive linkage combines backboard and target.Backboard has conduction, permeance not, and thermal conductivity is good, such as oxygen free copper, molybdenum, aluminium, stainless steel backboard.
The above embodiment has only expressed a kind of embodiment of this patent, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to this patent scope.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from this patent design, can also make some distortion and improvement, these all belong to protection domain of the present utility model.Therefore, the protection domain of this patent should be as the criterion with claims.
Claims (3)
1. one kind is used for flexible parent metal magnetron sputtering plating target, and it is characterized in that: it comprises backboard (3), and the upper surface of described backboard (3) has a protruding strip part, and the target (1) on the described backboard (3) links to each other with backboard (3) by adhesive linkage (2).
2. described for flexible parent metal magnetron sputtering plating target according to claim 1, it is characterized in that: adhesive linkage (2) upper level is identical with above-mentioned protruding strip part upper level.
3. described for flexible parent metal magnetron sputtering plating target according to claim 1, it is characterized in that: adhesive linkage (2) upper level is lower than above-mentioned protruding strip part upper level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220353069 CN202688425U (en) | 2012-07-20 | 2012-07-20 | Target for magnetron sputtering coating of flexible substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220353069 CN202688425U (en) | 2012-07-20 | 2012-07-20 | Target for magnetron sputtering coating of flexible substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202688425U true CN202688425U (en) | 2013-01-23 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220353069 Expired - Fee Related CN202688425U (en) | 2012-07-20 | 2012-07-20 | Target for magnetron sputtering coating of flexible substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202688425U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104690487A (en) * | 2013-12-09 | 2015-06-10 | 有研亿金新材料股份有限公司 | Method for adhesively connecting target and backboard |
| CN108239761A (en) * | 2016-12-26 | 2018-07-03 | 北京北方华创微电子装备有限公司 | Magnetic target material assembly and preparation method thereof, sputtering chamber |
-
2012
- 2012-07-20 CN CN 201220353069 patent/CN202688425U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104690487A (en) * | 2013-12-09 | 2015-06-10 | 有研亿金新材料股份有限公司 | Method for adhesively connecting target and backboard |
| CN108239761A (en) * | 2016-12-26 | 2018-07-03 | 北京北方华创微电子装备有限公司 | Magnetic target material assembly and preparation method thereof, sputtering chamber |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130123 Termination date: 20190720 |