CN201615991U - 一种采用超临界水去除光刻胶的系统 - Google Patents
一种采用超临界水去除光刻胶的系统 Download PDFInfo
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- CN201615991U CN201615991U CN2010201257231U CN201020125723U CN201615991U CN 201615991 U CN201615991 U CN 201615991U CN 2010201257231 U CN2010201257231 U CN 2010201257231U CN 201020125723 U CN201020125723 U CN 201020125723U CN 201615991 U CN201615991 U CN 201615991U
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CN2010201257231U CN201615991U (zh) | 2010-03-05 | 2010-03-05 | 一种采用超临界水去除光刻胶的系统 |
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CN2010201257231U CN201615991U (zh) | 2010-03-05 | 2010-03-05 | 一种采用超临界水去除光刻胶的系统 |
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CN201615991U true CN201615991U (zh) | 2010-10-27 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104923534A (zh) * | 2015-05-22 | 2015-09-23 | 合肥京东方光电科技有限公司 | 面板配向膜清除设备 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104923534A (zh) * | 2015-05-22 | 2015-09-23 | 合肥京东方光电科技有限公司 | 面板配向膜清除设备 |
CN104923534B (zh) * | 2015-05-22 | 2017-11-14 | 合肥京东方光电科技有限公司 | 面板配向膜清除设备 |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: JIANGSU YINGXU OPTOELECTRONIC TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20150119 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100029 CHAOYANG, BEIJING TO: 221300 XUZHOU, JIANGSU PROVINCE |
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TR01 | Transfer of patent right |
Effective date of registration: 20150119 Address after: 2 building, 221300, Fuzhou Road Economic Development Zone, Pizhou, Jiangsu, Xuzhou Patentee after: JIANGSU YINGSU PHOTOELECTRIC TECHNOLOGY CO., LTD. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150930 Address after: The F3 sensor network Chinese International Innovation Park No. 200 214135 Jiangsu New District of Wuxi City Linghu Avenue Patentee after: Wuxi speed semiconductor technology Co., Ltd. Address before: 2 building, 221300, Fuzhou Road Economic Development Zone, Pizhou, Jiangsu, Xuzhou Patentee before: JIANGSU YINGSU PHOTOELECTRIC TECHNOLOGY CO., LTD. |
|
CX01 | Expiry of patent term |
Granted publication date: 20101027 |
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CX01 | Expiry of patent term |