CN102298276B - 硅片去胶装置 - Google Patents
硅片去胶装置 Download PDFInfo
- Publication number
- CN102298276B CN102298276B CN 201010209822 CN201010209822A CN102298276B CN 102298276 B CN102298276 B CN 102298276B CN 201010209822 CN201010209822 CN 201010209822 CN 201010209822 A CN201010209822 A CN 201010209822A CN 102298276 B CN102298276 B CN 102298276B
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- Prior art keywords
- deionized water
- silicon chip
- photoresist
- mixing tank
- reaction cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 46
- 239000010703 silicon Substances 0.000 title claims abstract description 45
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 55
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000008367 deionised water Substances 0.000 claims abstract description 30
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 30
- 238000006243 chemical reaction Methods 0.000 claims abstract description 24
- 239000011259 mixed solution Substances 0.000 claims abstract description 24
- 238000002156 mixing Methods 0.000 claims abstract description 24
- 238000003860 storage Methods 0.000 claims abstract description 11
- 238000001035 drying Methods 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 17
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 239000007788 liquid Substances 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000003292 glue Substances 0.000 abstract 2
- VTVVPPOHYJJIJR-UHFFFAOYSA-N carbon dioxide;hydrate Chemical compound O.O=C=O VTVVPPOHYJJIJR-UHFFFAOYSA-N 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 8
- 229910002092 carbon dioxide Inorganic materials 0.000 description 4
- 239000001569 carbon dioxide Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201010209822 CN102298276B (zh) | 2010-06-25 | 2010-06-25 | 硅片去胶装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201010209822 CN102298276B (zh) | 2010-06-25 | 2010-06-25 | 硅片去胶装置 |
Publications (2)
Publication Number | Publication Date |
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CN102298276A CN102298276A (zh) | 2011-12-28 |
CN102298276B true CN102298276B (zh) | 2013-03-06 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN 201010209822 Active CN102298276B (zh) | 2010-06-25 | 2010-06-25 | 硅片去胶装置 |
Country Status (1)
Country | Link |
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CN (1) | CN102298276B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI574749B (zh) * | 2013-06-11 | 2017-03-21 | Daxin Mat Corp | Methods and systems for removing colloids |
CN105319872B (zh) * | 2014-07-15 | 2020-02-07 | 沈阳芯源微电子设备股份有限公司 | 一种显影液恒温保持管路系统 |
CN104362123B (zh) * | 2014-10-10 | 2017-07-11 | 中国电子科技集团公司第四十一研究所 | 一种用于去除方形基片光刻蚀过程中边缘堆胶的夹具及方法 |
CN106298584B (zh) * | 2015-06-02 | 2018-09-28 | 沈阳芯源微电子设备有限公司 | 一种去胶液恒温系统 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1454392A (zh) * | 2000-08-14 | 2003-11-05 | 东京毅力科创株式会社 | 用超临界二氧化碳工艺从半导体上去除光致抗蚀剂和光致抗蚀残留物 |
CN1479172A (zh) * | 2002-07-24 | 2004-03-03 | 株式会社东芝 | 图形形成方法和衬底处理装置 |
US6737225B2 (en) * | 2001-12-28 | 2004-05-18 | Texas Instruments Incorporated | Method of undercutting micro-mechanical device with super-critical carbon dioxide |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3978023B2 (ja) * | 2001-12-03 | 2007-09-19 | 株式会社神戸製鋼所 | 高圧処理方法 |
JP2008130685A (ja) * | 2006-11-17 | 2008-06-05 | Sony Corp | 微細構造体の処理方法、処理装置、及びその微細構造体 |
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2010
- 2010-06-25 CN CN 201010209822 patent/CN102298276B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1454392A (zh) * | 2000-08-14 | 2003-11-05 | 东京毅力科创株式会社 | 用超临界二氧化碳工艺从半导体上去除光致抗蚀剂和光致抗蚀残留物 |
US6737225B2 (en) * | 2001-12-28 | 2004-05-18 | Texas Instruments Incorporated | Method of undercutting micro-mechanical device with super-critical carbon dioxide |
CN1479172A (zh) * | 2002-07-24 | 2004-03-03 | 株式会社东芝 | 图形形成方法和衬底处理装置 |
Non-Patent Citations (1)
Title |
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JP特开2008-130685A 2008.06.05 |
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Publication number | Publication date |
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CN102298276A (zh) | 2011-12-28 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: JIANGSU YINGXU OPTOELECTRONIC TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20150126 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: 100029 CHAOYANG, BEIJING TO: 221300 XUZHOU, JIANGSU PROVINCE |
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TR01 | Transfer of patent right |
Effective date of registration: 20150126 Address after: 2 building, 221300, Fuzhou Road Economic Development Zone, Pizhou, Jiangsu, Xuzhou Patentee after: JIANGSU YINGSU PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
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Effective date of registration: 20151014 Address after: The F3 sensor network China International Innovation Park No. 200 214135 Jiangsu province Wuxi District Linghu Avenue Patentee after: WUXI YSPHOTECH SEMICONDUCTOR TECHNOLOGY CO.,LTD. Address before: 2 building, 221300, Fuzhou Road Economic Development Zone, Pizhou, Jiangsu, Xuzhou Patentee before: JIANGSU YINGSU PHOTOELECTRIC TECHNOLOGY Co.,Ltd. |