CN201490199U - Crystalline silicon solar battery of selective emitter - Google Patents
Crystalline silicon solar battery of selective emitter Download PDFInfo
- Publication number
- CN201490199U CN201490199U CN2009200830952U CN200920083095U CN201490199U CN 201490199 U CN201490199 U CN 201490199U CN 2009200830952 U CN2009200830952 U CN 2009200830952U CN 200920083095 U CN200920083095 U CN 200920083095U CN 201490199 U CN201490199 U CN 201490199U
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- CN
- China
- Prior art keywords
- solar battery
- silicon solar
- selective emitter
- solar cell
- diffusion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model relates to a crystalline silicon solar battery of selective emitter, which has a structure that the base body thereof adopts a polycrystalline silicon wafer, a silver electrode leader, a silicon nitride film, a texture structure and selective n++ and n+ diffusion layers are arranged sequentially on the front surface thereof from top to bottom, wherein the junction depths of both n++ and n+ diffusion layers share the same horizontal position, and the surface of the n++ is slightly higher than that of the n+ diffusion layer, and a silver-aluminum electrode is arranged on the back surface of the battery. The utility model can improve the collecting rate of photogenic charge carrier, improve the output voltage of the solar battery, reduce the series resistance of the solar battery, reduce the surface recombination of the photogenic charge carrier, reduce the influence of diffusion dead layer, and improve the overall performance of the diffusion layer, and thereby improving the conversion efficiency of the solar battery.
Description
Technical field
The utility model relates to a kind of crystal-silicon solar cell, particularly crystal silicon solar cell with selective emitter.
Background technology
Solar cell can be an electric energy with conversion of solar energy, does not produce any harmful substance when electric power is provided, is the effective way that solves the energy and environment problem, realizes sustainable development.In all kinds of solar cells, silicon solar cell occupies extremely important status, and silicon solar cell occupied the share of photovoltaic market more than 90% always in recent years.The development trend of photovoltaic industry is the production cost that improves the solar cell conversion efficiency, reduces unit capacity.In the laboratory, the high conversion efficiency of single crystal silicon solar cell has reached 24.7%, and polycrystalline silicon solar cell reaches 20.4%, but because its structure and technology are too complicated, cost is too high, can't enter practical application.Need the new device architecture of exploitation,
The utility model content
The utility model provides a kind of crystal silicon solar cell with selective emitter, and manufacture craft is simple, power consumption is low, and production cost is low, the conversion efficiency height.
A kind of crystal silicon solar cell with selective emitter, matrix are polysilicon chip, and the front is a contact conductor, are followed successively by silicon nitride film downwards, suede structure and selectivity n
++And n
+Diffusion layer, n
++And n
+The junction depth of diffusion layer is at same horizontal level, and n
++The surface a little more than n
+Diffusion layer, cell backside has electrode.
Described front electrode lead-in wire is silver electrode lead wires.
Described cell backside electrode is silver-colored aluminium electrode.
Described cell backside top layer is an aluminium.
The utility model can improve photo-generated carrier collection rate, improve solar cell output voltage, reduce solar cell series resistance, reduce the photoproduction minority carrier surface recombination, reduce to spread the influence of dead layer and the overall performance that improves diffusion layer, thereby promote the conversion efficiency of solar cell.
Description of drawings
Fig. 1 is the utility model structural representation.
Among the figure: 2-contact conductor, 3-silicon nitride film, 4-n
++, 5-n
+, 6-aluminium, 7-electrode.
Embodiment
Fig. 1 shows a kind of crystal silicon solar cell with selective emitter, and the battery matrix is a polysilicon, and the front is a silver electrode lead wires 2, is followed successively by silicon nitride film 3 downwards, suede structure and selectivity n
++4 and n
+5 diffusion layers, n
++4 and n
+The junction depth of 5 diffusion layers is at same horizontal level, and n
++4 surface is a little more than n
+5 diffusion layers, cell backside top layer are aluminium 6, and backplate is traditional silver-colored aluminium electrode 7.
The utility model can utilize existing large-scale production equipment on the industry, reduces the manufacturing technology steps of selective emitter solar battery to greatest extent, cuts down the consumption of energy, and reduces production costs.
Certainly; the utility model also can have other various embodiments; under the situation that does not deviate from the utility model spirit and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the utility model, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the utility model.
Claims (4)
1. crystal silicon solar cell with selective emitter, it is characterized in that: matrix is a polysilicon chip, the front is contact conductor (2), is followed successively by silicon nitride film (3) downwards, suede structure and selectivity n
++(4) and n
+(5) diffusion layer, n
++(4) and n
+(5) junction depth of diffusion layer is at same horizontal level, and n
++(4) surface is a little more than n
+(5) diffusion layer, cell backside have electrode (7).
2. crystal silicon solar cell with selective emitter according to claim 1 is characterized in that: described front electrode lead-in wire (2) is a silver electrode lead wires.
3. crystal silicon solar cell with selective emitter according to claim 1 is characterized in that: described cell backside electrode (7) is silver-colored aluminium electrode.
4. crystal silicon solar cell with selective emitter according to claim 1 is characterized in that: described cell backside top layer is aluminium (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200830952U CN201490199U (en) | 2009-08-04 | 2009-08-04 | Crystalline silicon solar battery of selective emitter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200830952U CN201490199U (en) | 2009-08-04 | 2009-08-04 | Crystalline silicon solar battery of selective emitter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201490199U true CN201490199U (en) | 2010-05-26 |
Family
ID=42429066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009200830952U Expired - Fee Related CN201490199U (en) | 2009-08-04 | 2009-08-04 | Crystalline silicon solar battery of selective emitter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201490199U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102306684A (en) * | 2011-09-19 | 2012-01-04 | 刘锋 | Selective emitter with third-stage doping level and preparation method thereof |
-
2009
- 2009-08-04 CN CN2009200830952U patent/CN201490199U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102306684A (en) * | 2011-09-19 | 2012-01-04 | 刘锋 | Selective emitter with third-stage doping level and preparation method thereof |
| CN102306684B (en) * | 2011-09-19 | 2016-01-20 | 苏州旭环光伏科技有限公司 | Selective emitter of a kind of three grades of doped level and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: TIANWEI NEW ENERGY HOLDINGS CO., LTD. Free format text: FORMER OWNER: TIANWEI NEW ENERGY (CHENGDU) CELL CO., LTD. Effective date: 20111102 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20111102 Address after: 610200, Print-Rite Road, Southwest Economic Development Zone, Shuangliu County, Sichuan, Chengdu 1, China Patentee after: Tianwei New Energy Holdings Co., Ltd. Address before: 610200, Print-Rite Road, Southwest Economic Development Zone, Shuangliu County, Sichuan, Chengdu 1, China Patentee before: Tianwei New Energy (Chengdu) Battery Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100526 Termination date: 20160804 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |