CN202025765U - Efficient crystalline silica solar energy cell structure - Google Patents
Efficient crystalline silica solar energy cell structure Download PDFInfo
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- CN202025765U CN202025765U CN2011200899654U CN201120089965U CN202025765U CN 202025765 U CN202025765 U CN 202025765U CN 2011200899654 U CN2011200899654 U CN 2011200899654U CN 201120089965 U CN201120089965 U CN 201120089965U CN 202025765 U CN202025765 U CN 202025765U
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- Prior art keywords
- grid line
- negative pole
- silicon wafer
- silicon chip
- negative
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 1
- 229910002026 crystalline silica Inorganic materials 0.000 title 1
- 235000012239 silicon dioxide Nutrition 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 47
- 239000010703 silicon Substances 0.000 claims abstract description 47
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052709 silver Inorganic materials 0.000 claims abstract description 8
- 239000004332 silver Substances 0.000 claims abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000007650 screen-printing Methods 0.000 claims abstract description 4
- 239000002800 charge carrier Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 10
- 239000002002 slurry Substances 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 16
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000003466 welding Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract 2
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000032554 response to blue light Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- Photovoltaic Devices (AREA)
Abstract
本实用新型属于太阳能电池的制造技术，涉及一种高效晶体硅太阳能电池结构。该结构包括有硅片，硅片正面具有减反射层，背面具有铝背场；通过丝网印刷形成的负极主栅线位于硅片正面，正极主栅线位于硅片背面，用于收集载流子的负极副栅线也位于硅片背面；与负极副栅线对应的位置，开有贯通硅片正面和背面的通孔，使负极副栅线与硅片正面相通；在负极主栅线与负极副栅线之间的硅片基体上还开有连接孔，连接孔中充满银浆，使位于硅片正面的负极主栅线与位于硅片背面的负极副栅线导电连接。本实用新型既可提高电池片效率，又能实现组件封装与正负极分别位于电池片两面的焊接封装设备相兼容。
The utility model belongs to the manufacturing technology of solar cells and relates to a high-efficiency crystalline silicon solar cell structure. The structure includes a silicon wafer with an anti-reflection layer on the front and an aluminum back field on the back; the negative main grid line formed by screen printing is located on the front side of the silicon wafer, and the positive main grid line is located on the back of the silicon wafer for collecting current. The negative sub-grid line of the sub is also located on the back of the silicon wafer; at the position corresponding to the negative sub-grid line, there is a through hole through the front and back of the silicon wafer, so that the negative sub-gate line communicates with the front side of the silicon wafer; There are also connection holes on the silicon substrate between the negative sub-grid lines, and the connection holes are filled with silver paste, so that the negative main grid lines on the front side of the silicon wafer are conductively connected to the negative sub-gate lines on the back side of the silicon wafer. The utility model can not only improve the efficiency of the battery sheet, but also realize the compatibility of component packaging and welding and packaging equipment in which the positive and negative electrodes are respectively located on the two sides of the battery sheet.
Description
Technical field
The utility model belongs to the manufacturing technology of solar cell, relates to a kind of high-efficiency crystal silicon solar battery structure and manufacture method thereof.
Background technology
In traditional crystal silicon solar energy battery structure, the secondary grid line that is used to collect charge carrier makes the front increase about 7%～8% left and right sides shading area in battery sheet front, has caused the short circuit current (Isc) of battery sheet lower, and improved efficiency is subjected to this influence.Common solution is to manage to improve the depth-width ratio of secondary grid line, and this can be to half tone, and typography and silver slurry are had higher requirement; Perhaps adopt typography twice, like this distortion of equipment alignment precision and half tone is had higher requirement again, increased manufacture difficulty.
For improving the crystal silicon cell conversion efficiency, the many technology of research are carried on the back contact technique exactly at present, this technology main feature is to guide to the back side of battery sheet with being positioned at positive main grid line and secondary grid line, reduces the shading area thereby reach, and improves the purpose of short circuit current.In this wherein more representational technology MWT (Metallization Wrap Though) and EWT (Emitter Wrap Though) technology being arranged. EWT technology battery sheet front does not have metal grid lines fully, but by the hole of running through silicon chip the charge carrier of collecting is transmitted on the electrode at the back side.Because of the PN junction of EWT all has distribution at front and back, so the short distance of carrier transport just can be collected.The MWT technology also is to adopt laser beam perforation technology, but still there is the secondary grid line of metal in its front, and charge carrier collects on several nodes of secondary grid line after collecting by the secondary grid line of the metal on surface, by these nodes charge carrier is transmitted to the electrode of cell back face again.These two kinds of technology to battery sheet improved efficiency all at the 0.5%(absolute value) more than.Because two kinds of technology have all been guided to both positive and negative polarity the back side of battery sheet, it is incompatible to cause assembly production technology and both positive and negative polarity to lay respectively at the welding packing producing line on battery sheet two sides, so the change that above-mentioned new technology is done battery structure proposes new requirement to follow-up component package technology, need transformation and upgrading existing manufacturing technique and equipment can reach the demand of batch process, it is more to make that cost increases.
Summary of the invention
Technical problem to be solved in the utility model is, a kind of battery sheet efficient that both can improve is provided, and can realize that again component package and both positive and negative polarity lay respectively at the compatible mutually high-efficiency crystal silicon solar battery structure of welding sealed in unit on battery sheet two sides.
High-efficiency crystal silicon solar battery structure of the present utility model includes silicon chip, and the silicon chip front has antireflection layer, and the back side has aluminium back of the body field; The negative pole main grid line that forms by silk screen printing is positioned at silicon chip front (P type silicon substrate), and anodal main grid line is positioned at the silicon chip back side, and the secondary grid line of negative pole that is used to collect charge carrier also is positioned at the silicon chip back side; With the corresponding position of the secondary grid line of negative pole, have the through hole that connects the silicon chip front and back, the secondary grid line of negative pole is communicated with the silicon chip front; On the silicon chip matrix between negative pole main grid line and the secondary grid line of negative pole, also have connecting hole, be full of the silver slurry in the connecting hole, the secondary grid line conduction of negative pole main grid line that is positioned at the silicon chip front and the negative pole that is positioned at the silicon chip back side is connected.
Have the half filling silver slurry that is connected with the secondary grid line of negative pole in the through hole at the secondary grid line of described positive pole position, be used for making positive charge carrier can import to the secondary grid line of negative pole smoothly.
Secondary grid line of described consequent pole and aluminium back of the body field are interspersed.
Structure of the present utility model and method will be collected charge carrier when improving battery sheet efficient consequent pole main grid line is retained in battery sheet front, the terminal structure of the external output current of battery sheet is not compared with traditional structure and is changed like this, component package technology and traditional handicraft are compatible fully, have reduced the input of scrap build; Simultaneously, because the secondary grid line in battery sheet front is transferred to the cell back face, thus reduced the shading area, improved battery sheet efficient; In addition, because this structure battery also has the two sides can both collect the characteristic of charge carrier, therefore the diffusion length to silicon materials itself requires also relative conventional batteries low, can adopt comparatively cheap silicon materials, reduces cost.
Description of drawings
Fig. 1 is the schematic perspective view of the utility model structure;
Fig. 2 is the generalized section of the utility model structure;
Fig. 3 is the back side local distribution figure of the utility model structure;
Fig. 4 is the I-V curve comparison diagram of solar cell of the present utility model and conventional solar cell;
Fig. 5 is the power comparison diagram of solar cell of the present utility model and conventional solar cell;
Fig. 6 is the IQE response comparison diagram of solar cell of the present utility model and conventional solar cell.
Embodiment
As shown in the figure, high-efficiency crystal silicon solar battery structure of the present utility model includes silicon chip 1, and the silicon chip front has antireflection layer 2, and the back side has aluminium back of the body field 3; The negative pole main grid line 4 that forms by silk screen printing is positioned at the silicon chip front, and anodal main grid line 5 is positioned at the silicon chip back side, and the secondary grid line 6 of negative pole that is used to collect charge carrier also is positioned at the silicon chip back side; The position corresponding with the secondary grid line of negative pole 6 has the through hole 7 that connects the silicon chip front and back, and the secondary grid line of negative pole is communicated with the silicon chip front; On the silicon chip matrix between negative pole main grid line 4 and the secondary grid line 6 of negative pole, also have connecting hole 8, be full of silver slurry 9 in the connecting hole, the secondary grid line conduction of negative pole main grid line and negative pole is connected.
As shown in Figure 2, have the half filling silver slurry 10 that is connected with the secondary grid line of negative pole in the through hole 7 at the secondary grid line of negative pole position, be used for the photo-generated carrier that the front produces is imported to the secondary grid line of negative pole.
As shown in Figure 3, the secondary grid line 6 of negative pole is interspersed with aluminium back of the body field 3.
With structure of the present utility model according to polycrystalline 156mm * 156mm battery sheet through after the simulation calculation, trend meets expection as a result:
After secondary grid line is guided to the cell back face, light-receiving area increases, short circuit current (Isc) has raising, Voc also has raising (Fig. 4) simultaneously, battery sheet power (Pmp) also has raising (Fig. 5), and (the PC1D simulation only changes shading area size, and it is identical that other parameters keep, the absolute value of data is only for reference, and IQE-ref is a conventional batteries; IQE-new is a battery of the present utility model).
Can obviously find out from its IQE response (Fig. 6), because the battery square resistance does not change, recombination-rate surface does not change, so not influence of response to blue light, thereby analog result demonstration IQE curve is about the same, and (the PC1D simulation only changes shading area size, and it is identical that other parameters keep, the absolute value of data is only for reference, and IQE-ref is a conventional batteries; IQE-new is a battery of the present utility model).
Claims (3)
1. a high-efficiency crystal silicon solar battery structure includes silicon chip (1), and the silicon chip front has antireflection layer (2), and the back side has the aluminium back of the body (3); The negative pole main grid line (4) that forms by silk screen printing is positioned at the silicon chip front, and anodal main grid line (5) is positioned at the silicon chip back side, it is characterized in that: the secondary grid line of negative pole (6) that is used to collect charge carrier also is positioned at the silicon chip back side; With the corresponding position of the secondary grid line (6) of negative pole, have the through hole (7) that connects the silicon chip front and back, the secondary grid line of negative pole is communicated with the silicon chip front; On the silicon chip matrix between negative pole main grid line (4) and the secondary grid line of negative pole (6), also have connecting hole (8), be full of silver slurry (9) in the connecting hole, the secondary grid line conduction of negative pole main grid line and negative pole is connected.
2. high-efficiency crystal silicon solar battery structure according to claim 1 is characterized in that: have the half filling silver slurry (10) that is connected with the secondary grid line of negative pole in the through hole (7) at the secondary grid line of negative pole position.
3. high-efficiency crystal silicon solar battery structure according to claim 1 is characterized in that: the secondary grid line of negative pole (6) is interspersed with the aluminium back of the body (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200899654U CN202025765U (en) | 2011-03-31 | 2011-03-31 | Efficient crystalline silica solar energy cell structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200899654U CN202025765U (en) | 2011-03-31 | 2011-03-31 | Efficient crystalline silica solar energy cell structure |
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| Publication Number | Publication Date |
|---|---|
| CN202025765U true CN202025765U (en) | 2011-11-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011200899654U Expired - Fee Related CN202025765U (en) | 2011-03-31 | 2011-03-31 | Efficient crystalline silica solar energy cell structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157576A (en) * | 2011-03-31 | 2011-08-17 | 镇江大全太阳能有限公司 | Efficient crystalline silicon solar battery structure and manufacture method thereof |
| CN115832075A (en) * | 2022-12-28 | 2023-03-21 | 通威太阳能（成都）有限公司 | Solar cell chips, solar cell sheets, solar cell strings and shingled modules for the preparation of shingled modules |
-
2011
- 2011-03-31 CN CN2011200899654U patent/CN202025765U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157576A (en) * | 2011-03-31 | 2011-08-17 | 镇江大全太阳能有限公司 | Efficient crystalline silicon solar battery structure and manufacture method thereof |
| CN115832075A (en) * | 2022-12-28 | 2023-03-21 | 通威太阳能（成都）有限公司 | Solar cell chips, solar cell sheets, solar cell strings and shingled modules for the preparation of shingled modules |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111102 Termination date: 20170331 |
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| CF01 | Termination of patent right due to non-payment of annual fee |