CN201386144Y

CN201386144Y - Doping hopper of single crystal furnace

Info

Publication number: CN201386144Y
Application number: CN200920041773U
Authority: CN
Inventors: 程宜红; 吴伟忠
Original assignee: YOUZE TECHNOLOGY Co Ltd
Current assignee: Youze Technology Co., Ltd.
Priority date: 2009-04-03
Filing date: 2009-04-03
Publication date: 2010-01-20
Anticipated expiration: 2019-04-03

Abstract

The utility model discloses a doping hopper of a single crystal furnace, which is used for doping, secondary or multiple-time batch charging of a straight-pull silicon single crystal furnace; the doping hopper comprises a charging barrel, a discharging upright pole and hopper valves; the discharging upright pole penetrates through a guide sleeve on a rigid support of the inner wall of the charging barrel from top to bottom and is opened to the bottom of the charging barrel, the hopper valves and the charging barrel are connected by an articulated arm on the outer wall of the bottom end of the charging barrel, when the hopper valves are closed, the bottom part of the hopper valve is clamped in a stud groove at the lower end of the discharging upright pole, at the moment, the seam of side edge of the hopper valves and the seam of the hopper valve and the charging barrel have no gap. A flange plate is arranged on the outer wall of the charging barrel, when in batch charging, the doping hopper of the single crystal furnace descends slowly, after the flange plate and a furnace cover flange of the single crystal furnace are contacted, the charging barrel stops descending and the discharging upright pole continuously descends, three hopper valves are opened automatically, the material is dropped in the single crystal furnace. The equipment has simple structure, can carries out doping, secondary or multiple-time batch charging conveniently and accurately in the production process of the silicon single crystals; in addition, the process environment in the single crystal furnace is not affected, the quality of the silicon single crystals is improved and the production cost is reduced.

Description

Single crystal growing furnace doping hopper

Technical field

The utility model belongs to silicon single-crystal manufacturing technology field, relates to the single crystal growing furnace doping hopper of the doping of vertical pulling silicon single crystal stove, secondary or the usefulness that repeatedly feeds intake.

Background technology

Along with the fast development of domestic photovoltaic industry, the kind of solar level silicon single crystal is more and more, and as the solar level silicon single crystal of IC level or ultralow resistance resistivity, this silicon single crystal need mix in extractive process.In addition, when production feeds intake, feed intake once that it is excessive and can't realize maximum injected volume the time to be subject to silicon material volume, need secondary or repeatedly feed intake.But the Czochralski method mono-crystal furnace of domestic supply does not at present but have the secondary batching utility appliance, has brought difficulty for doping and secondary batching.The production environment of solar level silicon single crystal is a high-temperature low-pressure, and the seal request height, when doping, secondary or when repeatedly reinforced, can only open bell, and fast from the fire door input, this method one is to influence fire box temperature and pressure; The 2nd, for the solar level silicon single crystal of different varieties, its adulterated tolerance range is bigger to the quality and the yield influence of product, adopts aforesaid way to mix, and can not accurately control the precision that feeds intake, and is reinforced also even inadequately.Therefore needing to have a device, can make things convenient in crystal for straight drawing monocrystal stove production process, accurately mix, secondary or repeatedly reinforced, and this equipment should be simple in structure, and do not influence the interior process environments of single crystal growing furnace stove.

Summary of the invention

The purpose of this utility model is to provide a kind of and can makes things convenient in the crystal for straight drawing monocrystal production process, accurately mixes, secondary or repeatedly reinforced, needs exploitation a kind of simple in structure and do not influence the single crystal growing furnace doping hopper of process environments in the single crystal growing furnace stove.

In order to achieve the above object, the technical solution of the utility model is that single crystal growing furnace doping hopper comprises barrel, discharging vertical rod and bucket lobe; The barrel upper inside wall is fixed with a rigid support, is positioned on the support of barrel central position to be equipped with a guide pin bushing, and the barrel external wall of upper portion has a ring flange, has ventilating pit on the ring flange.The discharging vertical rod is passed guide pin bushing from top to bottom and is led to the barrel bottom, and discharging vertical rod lower end is the column cap that has groove; The bucket lobe is positioned at the bottom of barrel, is equipped with pivoted arm on the outer wall of barrel bottom, and the bucket lobe is connected by pivoted arm with barrel; When the bucket lobe was closed, bucket lobe bottom was fastened in the column cap groove, and the bucket lobe closes up no gap with bucket lobe side seam place, bucket lobe and barrel seam crossing.

There is a preset pieces at discharging vertical rod middle part, and preset pieces is between guide pin bushing and column cap.

The bucket lobe is an arc, adopts hard alloy steel to make, and avoids long-time load deformation.

Discharging vertical rod upper end is with dop, and the discharging vertical rod is connected with pin with dop.

Dop top is helicitic texture.

The utlity model has following advantage;

At the solar level silicon single crystal of making IC level or ultralow resistance resistivity,, thereby cause final crystal resistivity skew and influence product property and yield because antimony, arsenic element self chemical factor very easily volatilizees under the normal molten silicon of high temperature.After adopting the utility model single crystal growing furnace doping hopper, because of doping accuracy is easy to control, do not influence process environments in the stove during doping, product quality and production cost are clearly better.Facts have proved IC level solar level silicon single crystal, the yield of reblended antimony, arsenic single crystal body will exceed 15% than the conventional yield of preparing that mixes, and economic benefit is considerable.

Another advantage of this device is: existing market single crystal growing furnace separate unit charging capacity one is to be limited by the silicon crystal of customer requirement than low oxygen content, the 2nd, its solid volume of silicon itself is greater than liquid volume, when feeding intake, production can not realize maximum charging capacity, through measuring and calculating, the actual thermal field size of monocrystal stove and original silicon material form can increase by 5～20kg charging capacity by every stove, just account for 9%～18% of total charging capacity.After adopting the utility model single crystal growing furnace doping hopper, under the process environments condition, secondary batching can improve single crystal growing furnace production efficiency in not influencing the single crystal growing furnace stove, thereby greatly reduces the drawing cost of silicon single-crystal.

Single crystal growing furnace doping hopper construction is simple, can be in the production process of silicon single-crystal, make things convenient for, accurately mix, secondary or repeatedly reinforced, and do not influence process environments in the single crystal growing furnace stove, favourable to the production efficiency that improves single crystal growing furnace and the drawing cost that reduced silicon single-crystal.

Description of drawings

Below in conjunction with accompanying drawing the utility model is done explanation in further detail.

Cross-sectional schematic when Fig. 1 is the utility model embodiment bucket lobe closure;

Fig. 2 is the schematic top plan view of Fig. 1;

Cross-sectional schematic when Fig. 3 is the unlatching of the utility model embodiment bucket lobe;

Fig. 4 is the schematic top plan view of Fig. 3.

Embodiment

Be illustrated as structure and the operation steps of the utility model embodiment.

Master during as depicted in figs. 1 and 2 for the utility model embodiment bucket lobe closure looks synoptic diagram and schematic top plan view.

Single crystal growing furnace doping hopper comprises barrel 1, discharging vertical rod 2 and bucket lobe 3; Barrel 1 upper inside wall is fixed with a rigid support 4, is positioned on the support 4 of barrel 1 central position to be equipped with a guide pin bushing 5, and barrel 1 external wall of upper portion has a ring flange 11.Discharging vertical rod 2 is passed guide pin bushing 5 from top to bottom and is led to barrel 1 bottom, and discharging vertical rod 2 and guide pin bushing 5 are for being slidingly matched, and discharging vertical rod 2 can move up and down; Discharging vertical rod 2 lower ends are the column cap 6 that has groove; Bucket lobe 3 is positioned at the bottom of barrel 1, and totally three lobes are equipped with three pivoted arms 7 on the barrel 1 bottom outer wall, and bucket lobe 3 is connected by pivoted arm 7 with barrel 1; During bucket lobe 3 closures, three lobe bucket lobes, 3 bottoms are fastened in column cap 6 grooves, and each lobe 3 side seam place that struggle against, bucket lobe 3 all close up no gap with barrel 1 seam crossing.

There is a limited block 8 at discharging vertical rod 2 middle parts, and limited block 8 is between guide pin bushing 5 and column cap 6.

Three lobe bucket lobes 3 are arc, adopt hard alloy steel to make, and avoid long-time load deformation.

Have ventilating pit 12 on the ring flange 11, be used for the argon gas shunting, guarantee that this device does not influence equipment and normally moves.

Discharging vertical rod 2 upper ends are with graphite dop 9, and discharging vertical rod 2 is connected with graphite dop 9 usefulness pins 10.

Graphite dop 9 tops are helicitic texture.

Doping, secondary or repeatedly feed intake before, close bucket lobe 3, bucket lobe 3 bottoms are fastened on auto lock in column cap 6 grooves.The material of doping, secondary or repeatedly input is placed in the barrel 1, and the upper surface of preset pieces 8 contacts with the lower surface of support 4 upper guide bush 5, being threadedly connected on the flexible shaft in single crystal furnace on the graphite dop 9.

Need slowly to promote single crystal growing furnace doping hopper to the single crystal growing furnace concubine when reinforced, and close concubine and enter the single crystal growing furnace normal running.

Master when opening for the utility model embodiment bucket lobe as shown in Figure 3 and Figure 4 looks synoptic diagram and schematic top plan view.

After the polycrystal thawing finishes in the stove, single crystal growing furnace doping hopper on the slow decline flexible shaft in single crystal furnace, when ring flange 11 with after single crystal growing furnace bell flange contacts, barrel 1 stops to descend and discharging vertical rod 2 continuation declines, this moment, three lobe bucket lobes 3 were opened automatically with the swing camber line of pivoted arm 7, material falls on the interior liquid level of single crystal growing furnace automatically in the barrel 1, doping, secondary or repeatedly reinforced finishing.

After doping, secondary or repeatedly reinforced the finishing.Mention discharging vertical rod 2, when discharging vertical rod 2 middle part limited blocks 8 upper surfaces with after support 4 upper guide bush 5 lower surfaces contact, by reactive force whole single crystal growing furnace doping hopper is mentioned, enter normal crystal pulling technique at last.

Claims

1, a kind of single crystal growing furnace doping hopper is characterized in that: comprise barrel (1), discharging vertical rod (2) and bucket lobe (3); Barrel (1) upper inside wall is fixed with a rigid support (4), is positioned on the support (4) of barrel (1) central position to be equipped with a guide pin bushing (5), and barrel (1) external wall of upper portion has a ring flange (11); Discharging vertical rod (2) is passed guide pin bushing (5) from top to bottom and is led to barrel (1) bottom, and discharging vertical rod (2) lower end is the column cap (6) that has groove; Bucket lobe (3) is positioned at the bottom of barrel (1), is equipped with pivoted arm (7) on the outer wall of barrel (1) bottom, and bucket lobe (3) is connected by pivoted arm (7) with barrel (1); When bucket lobe (3) was closed, bucket lobe (3) bottom was fastened in column cap (6) groove, and bucket lobe (3) closes up no gap with bucket lobe (3) side seam place, bucket lobe (3) with barrel (1) seam crossing.

2, single crystal growing furnace doping hopper according to claim 1 is characterized in that: described discharging vertical rod (2) middle part has a preset pieces (8), preset pieces (8) to be positioned between guide pin bushing (5) and the column cap (6).

3, single crystal growing furnace doping hopper according to claim 2 is characterized in that: described bucket lobe (3) is an arc.

4, according to claim 2 or 3 described single crystal growing furnace doping hoppers, it is characterized in that: have ventilating pit (12) on the described ring flange (11).

5, single crystal growing furnace doping hopper according to claim 4 is characterized in that: described discharging vertical rod (2) upper end is with dop (9), and discharging vertical rod (2) is connected with pin (10) with dop (9).

6, single crystal growing furnace doping hopper according to claim 5 is characterized in that: described dop (9) top is helicitic texture.