CN201163627Y - A semiconductor light-emitting device forced heat dissipation device - Google Patents

Abstract

The utility model discloses a forced heat dissipation device for a semiconductor light emitting device. The device includes a base, heat-conducting silica gel, heat pipes, cooling fins and high-power semiconductor light-emitting devices; at least one circular groove matching the outer diameter of the heat pipe is opened on the upper part of the base, and heat-conducting silica gel is placed in the circular groove, and the heat pipe The hot end is put into the circular groove, the cold end of the heat pipe is connected with the cooling fins, and a plurality of high-power semiconductor light emitting devices are arranged at the lower end of the base. The heat pipe of the device and the base are tightly combined with heat-conducting silicone grease so that the heat generated by the high-power semiconductor light-emitting device fixed on the lower plane of the base is conducted to the heat pipe and then dissipated through the heat sink. The utility model has the advantages of simple processing of the high-efficiency heat transfer fixed base, and the connection method with the heat pipe enables good heat exchange efficiency between the heat pipe and the base, and has the advantages of light weight, long life, simple structure, practicality and reliability.

Description

A semiconductor light-emitting device forced heat dissipation device

technical field

The utility model relates to a heat dissipation device for a semiconductor light emitting device, in particular to a forced heat dissipation device for a semiconductor light emitting device.

Background technique

With the shortage of energy and the increasing attention to environmental protection, energy saving and environmental protection have become the general trend of today's social development. Compared with incandescent lamps and fluorescent lamps, LED has become one of the main development directions of a new generation of environmentally friendly lighting sources because of its small size, full solid state, long life, environmental protection, and power saving. It is also the most promising development in the 21st century. One of the high-tech fields in China is a revolution of great significance in the way of lighting. LED luminescence is caused by the recombination of carriers to release excess energy to cause photon emission, which can directly convert electrical energy into visible light and radiation energy. For W-level (≥1W) high-power LEDs, the chip size is only 1mm×1mm～2.5mm×2.5mm, which means that the power density of the chip is very high, and this kind of high-power LED will generate a lot of heat during work. , when the temperature exceeds the standard limit value, it will cause irreversible light intensity attenuation. Studies have shown that if the operating temperature of a single LED increases by 10°C, its reliability will be reduced by 50%. With LED high performance, miniaturization, With the three major development trends of integration, the problem of heat dissipation is becoming more and more prominent. The accumulation of heat at the chip will seriously affect its stability and service life. This has become a constraint factor for the large-scale application of high-brightness LED combined light sources. It is critical to ensure its optimal performance.

Utility model content

The purpose of this utility model is to solve the problem of poor heat dissipation after multiple high-power LEDs are combined and installed at present, and propose a forced heat dissipation device for semiconductor light-emitting devices to solve the heat accumulation caused by multiple high-power LED light sources as the power increases. The problem with chips failing quickly.

The utility model is realized through the following technical solutions:

A forced heat dissipation device for a semiconductor light-emitting device, including a base, heat-conducting silica gel, heat pipes, cooling fins and a high-power semiconductor light-emitting device; at least one circular groove matching the outer diameter of the heat pipe is opened on the upper part of the base The heat-conducting silica gel is coated in the shaped groove, the hot end of the heat pipe is placed in the circular groove, the cold end of the heat pipe is connected with the cooling fins, and a plurality of high-power semiconductor light-emitting devices are arranged at the lower end of the base.

In order to further realize the purpose of the utility model, the high-power semiconductor light-emitting device is installed on the base connecting plate, and heat-conducting silica gel is placed between the base connecting plate and the base, and connected by screws to form a whole. The number of said heat pipes is preferably 2 or 1.

The base is a square or circular plate made of copper or aluminum.

The heat pipe and the base plate are connected in a tight fitting or welding manner.

The device for forcing heat dissipation of semiconductor light-emitting devices also includes a protective cover and a transparent cover, the protective cover is arranged on the outer periphery of the base, the transparent cover is arranged on the lower end of the high-power semiconductor light-emitting device, and the protective cover is welded on the lower end of the heat sink, or has a semi-circular structure , the protective cover and the transparent cover form a closed structure.

The plurality of semiconductor light emitting devices form a square structure or a circular structure.

The heat pipe is an open curved pipe or a bent round pipe.

Compared with the prior art, the present invention has the following advantages:

(1) The utility model proposes a forced heat dissipation device for semiconductor light-emitting devices. Through the close connection between the base and the heat pipe, the heat generated by multiple high-power semiconductor light-emitting devices is effectively transferred to the hot end of the heat pipe, and then conducted to the heat pipe through the heat pipe. The fins let out.

(2) The utility model utilizes welding or close fit to integrate the base and the heat pipe through heat-conducting silica gel. The base is easy to process, and the connection with the heat pipe has good heat exchange efficiency. It has the advantages of light weight, long durability, simple structure, practicality and reliability.

Description of drawings

Fig. 1 is a schematic structural diagram of a forced heat dissipation device for a semiconductor light-emitting device in Embodiment 1;

2 is a schematic structural diagram of a forced heat dissipation device for a semiconductor light emitting device in Embodiment 2;

3 is a schematic structural diagram of a forced heat dissipation device for a semiconductor light emitting device in Embodiment 3;

Fig. 4 schematic diagram of base structure;

Fig. 5 is a schematic diagram of the structure of a square base;

Fig. 6 is a schematic diagram of a circular base structure;

Fig. 7 is the combined structural diagram of square plate and circular plate base;

Fig. 8a is a schematic diagram of a square distribution of semiconductor light emitting devices;

Figure 8b is a schematic diagram of the circular distribution of semiconductor light emitting devices;

Figure 9a is a schematic diagram of the structure of an open heat pipe;

Fig. 9b is a schematic diagram of the structure of the bent heat pipe.

Detailed ways

The utility model will be further described below in conjunction with the examples, but the embodiments of the utility model are not limited thereto.

Example 1

As shown in Figure 1, a semiconductor light-emitting device forced heat dissipation device includes a base 1, a base connecting plate 2, a heat-conducting silica gel 3, a heat pipe 4, a heat dissipation fin 5, a fixing screw 6, a high-power semiconductor light-emitting device 7, and a protective cover 8. Transparent cover 9. Open two circular grooves matching the outer diameter of the heat pipe on the upper part of the base 1, put the thermal silica gel 3 into the circular groove, put the hot end of the heat pipe 4 into the circular groove, squeeze the edge of the circular groove or weld The heat pipe 4 is firmly connected with the base 1 in one body, and the cold end of the heat pipe 4 is connected with the cooling fin 5 . A heat-conducting silica gel 3 is placed between the base 1 and the base connecting plate 2, and connected by screws to form a whole. The lower part of the base connecting plate 2 is provided with a plurality of high-power semiconductor light-emitting devices 7, a protective cover 8 is provided on the outer periphery of the base and the base connecting plate 2, and a transparent cover 9 is provided at the lower end, and the protective cover 8 can be welded on the lower end of the heat sink 5 , the protective cover 8 and the transparent cover 9 form a closed structure. The protective cover 8 and the transparent cover 9 are used to protect the high-power semiconductor light-emitting device and its base. In this way, the high-power semiconductor light-emitting device at the lower end of the base connecting plate 2 generates a large amount of heat through the base connecting plate 2, heat-conducting silica gel 3 and base 1 to the heat pipe 4 hot end connected to the base, and then through the heat pipe 4. Arriving at its cold end, the heat is dissipated through the cooling fins 5 at the cold end of the heat pipe. In this embodiment, the function of the thermally conductive silica gel 3 not only reduces the thermal resistance between the base 1 and the heat pipe 4 , but also reduces the thermal resistance between the base 1 and the base connecting plate 2 . As shown in FIG. 8a, the planar high-power semiconductor light emitting device under the base connecting plate is arranged in a square structure, or it may be a circular structure as shown in FIG. 8b. Fig. 5, Fig. 6 are two kinds of forms of the base, Fig. 5 is the circular groove structure of the square plate, Fig. 6 is the circular groove structure of the circular plate, the base of this embodiment can be any one of these two structures, The present embodiment can also be the combination structure of Fig. 5 and Fig. 6 shown in Fig. 7, promptly set a square base shown in Fig. 5 on the circular base shown in Fig. 6 again, the circular base of two bases The grooves are matched, that is, the circular grooves of the square base are arranged in the circular grooves of the circular base. The structure of the heat pipe 4 in this embodiment is shown in Fig. 9a, which is an open bent pipe. The base and the base connecting plate are made of copper or aluminum with high thermal conductivity.

Example 2

As shown in FIG. 2 , a forced heat dissipation device for a semiconductor light emitting device includes a base 1 , a heat pipe 2 , a thermally conductive silica gel 3 , cooling fins 4 , a high-power semiconductor light emitting device 5 , a protective cover 6 , and a transparent cover 7 . Two circular grooves matching the outer diameter of the heat pipe are opened on the upper part of the base 1, and heat-conducting silica gel 3 is placed in the circular groove. After putting the hot end of the heat pipe 2 into the circular groove, squeeze the edge of the circular groove or The heat pipe 2 is firmly connected with the base 1 by welding, and the cold end of the heat pipe 2 is connected with the cooling fin 4 . The lower part of the base 1 is provided with a plurality of high-power semiconductor light-emitting devices 5, a protective cover 6 is provided on the periphery of the base, and a transparent cover 7 is provided at the lower end. The protective cover 6 can be welded to the lower end of the heat sink 4. The protective cover 6 and the transparent cover 7 form a closed structure. The protective cover 6 and the transparent cover 7 are used to protect the high-power semiconductor light-emitting device and its base. In this way, when the plane high-power semiconductor light-emitting device under the base 1 works, a large amount of heat is transmitted to the hot end of the heat pipe through the base, and then the heat is dissipated through the cooling fins 4 at the cold end of the heat pipe. The difference from Example 1 is that in this embodiment, the base 1 is an integral structure, the upper part is connected to the heat pipe, and the lower part is a structure for fixing the high-power semiconductor light-emitting device 5. 2 thermal resistance between. Likewise, the overall base structure can be one of the two forms shown in Fig. 5 and Fig. 6 . FIG. 8 shows two ways of fixing the structure of the high-power semiconductor light-emitting device under the base 1, which can be a circular structure or a square structure. The structure of the heat pipe is shown in Figure 9a, which is an open elbow. The base is made of copper or aluminum with high thermal conductivity

Example 3

As shown in FIG. 3 , a forced heat dissipation device for a semiconductor light emitting device includes a base 1 , a heat pipe 2 , a thermally conductive silica gel 3 , cooling fins 4 , a high-power semiconductor light emitting device 5 , a protective cover 6 , and a transparent cover 7 . Open a round through hole matching the outer diameter of the heat pipe on the upper part of the base 1, put heat-conducting silica gel 3 into the round through hole, place the heat pipe 2 in the round through hole, and firmly connect the hot end of the heat pipe 2 to the base 1 by welding In one body, the cold end of the heat pipe 2 is connected with the cooling fin 4 . The lower part of the base 1 is provided with a plurality of high-power semiconductor light-emitting devices 5, the outer periphery of the base is provided with a protective cover 6, and the lower end is provided with a transparent cover 7, the protective cover 6 forms a semi-circular structure, and the protective cover 6 and the transparent cover 7 form a closed structure . The protective cover 6 and the transparent cover 7 are used to protect the high-power semiconductor light-emitting device and its base. In this way, when the plane high-power semiconductor light-emitting device under the base 1 works, a large amount of heat is transmitted to the hot end of the heat pipe through the base, and then the heat is dissipated through the cooling fins 4 at the cold end of the heat pipe. In this embodiment, the base 1 is an integral structure, the upper part is connected to the heat pipe through a round hole, and the lower part is a structure for fixing a high-power semiconductor light-emitting device 5. The function of the heat-conducting silica gel 3 is to reduce the thermal resistance between the base 1 and the heat pipe 2 . The overall base structure is shown in Figure 4. There is a raised structure in the square base plate, which is convenient for setting round through holes. FIG. 8 shows two forms of high-power semiconductor light-emitting devices arranged at the lower part of the base 1, which can be in a circular form or in a rectangular form. The structure of the heat pipe is shown in Figure 9b, which is a bent round pipe. The base is made of copper or aluminum with high thermal conductivity.

Claims (9)

1, a kind of light emitting semiconductor device forced radiator is characterized in that comprising pedestal, heat conductive silica gel, heat pipe, radiating fin and high power semi-conductor luminescent device; The top of described pedestal has at least one circular recess that matches with the heat pipe external diameter, scribbles heat conductive silica gel in the circular recess, and circular recess is put in the heat pipe hot junction, and the cold junction of heat pipe is connected with radiating fin, and the pedestal lower end is provided with a plurality of high power semi-conductor luminescent devices.

2, light emitting semiconductor device forced radiator according to claim 1, it is characterized in that described high power semi-conductor luminescent device is installed on the pedestal connecting plate, put into heat conductive silica gel between pedestal connecting plate and the pedestal, couple together the formation one by screw.

3, light emitting semiconductor device forced radiator according to claim 1 is characterized in that described heat pipe is 2.

4, light emitting semiconductor device forced radiator according to claim 1 is characterized in that described heat pipe is 1.

5,, it is characterized in that described pedestal is the square or circular slab that copper or aluminium are made according to each described light emitting semiconductor device forced radiator of claim 1～4.

6,, it is characterized in that being connected for the mode that closely cooperates or weld between described heat pipe and the base plate according to each described light emitting semiconductor device forced radiator of claim 1～4.

7, according to each described light emitting semiconductor device forced radiator of claim 1～4; it is characterized in that described light emitting semiconductor device forced radiator also comprises protective cover and translucent cover; protective cover is arranged on the pedestal periphery; translucent cover is arranged on the lower end of high power semi-conductor luminescent device; protective cover is welded on the fin lower end; or be semi-circular structure, protective cover and translucent cover form enclosed construction.

8,, it is characterized in that described a plurality of light emitting semiconductor device composition square structure or circular configuration according to each described light emitting semiconductor device forced radiator of claim 1～4.

9,, it is characterized in that described heat pipe is the bend pipe or the bending pipe of opening shape according to each described light emitting semiconductor device forced radiator of claim 1～4.

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