CN201163627Y - Forced heat radiating device for semiconductor lighting device - Google Patents
Forced heat radiating device for semiconductor lighting device Download PDFInfo
- Publication number
- CN201163627Y CN201163627Y CNU2008200431464U CN200820043146U CN201163627Y CN 201163627 Y CN201163627 Y CN 201163627Y CN U2008200431464 U CNU2008200431464 U CN U2008200431464U CN 200820043146 U CN200820043146 U CN 200820043146U CN 201163627 Y CN201163627 Y CN 201163627Y
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- heat
- pedestal
- light emitting
- semiconductor device
- heat pipe
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- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a forced heat sink for a semiconductor luminescent device, comprising a substrate, heat-conducting silica gel, a heat tube, a radiation fin and high power semiconductor luminescent devices, wherein, the upper part of the substrate is provided with at least one round slot matched with an outer diameter of the heat tube; the heat-conducting silica gel is placed in the round slot; a heat end of the heat tube is placed in the round slot, while a cold end of the heat tube is connected with the radiation fin; and the lower end of the substrate is provided with a plurality of the high power semiconductor luminescent devices. The heat tube and the substrate of the device are closely combined by the heat-conducting silica gel to ensure that heat generated by the high power semiconductor luminescent devices fixed on the lower plane of the substrate can be conducted to the heat tube and be dispersed outside through the radiation fin. The forced heat sink for the semiconductor luminescent device has high efficient heat conduction and the fixed substrate with a simple process; and the connection method of the heat tube with the substrate ensures that excellent heat exchange efficiency can be provided between the heat tube and the substrate. The forced heat sink for the semiconductor luminescent device has the advantages of light weight, long service life, simple structure, practicality and reliability and so on.
Description
Technical field
The utility model relates to a kind of light emitting semiconductor device heat abstractor, particularly relates to a kind of light emitting semiconductor device forced radiator.
Background technology
Along with the in short supply of the energy with to the growing interest of environmental protection, energy-conservation and environmental protection has become the main trend of current social development.Compare with fluorescent lamp with incandescent lamp, series of advantages such as LED is little, all solid state with its volume, long-life, environmental protection, power saving, become one of main developing direction of new generation of environment protection lighting source, also being one of the high-tech sector of tool development prospect of 21 century, is the revolution that once is significant of lighting system.LED is luminous to be by charge carrier compound energy of emitting surplus to take place to cause photo emissions, can directly electric energy be converted into visible light and radiant energy.For the W level (〉=1W) for the high-capacity LED, and chip size only is 1mm * 1mm～2.5mm * 2.5mm, the power density that is to say chip is very big, this great power LED can produce a large amount of heats at work, when being above standard limit value, temperature will cause irrecoverable property light intensity attenuation, there are some researches show, if single led working temperature raises 10 ℃, its reliability then can reduce 50%, be accompanied by the LED high-performance, microminiaturized, three integrated great development trend, heat dissipation problem is more and more outstanding, heat will have a strong impact on its stability and useful life in the accumulation at chip place, this becomes the restraining factors of high-brightness LED combined light source large scale investment practicality, therefore effectively solves heat dissipation problem and guarantees that its optimum performance is most important.
The utility model content
The purpose of this utility model is the problem at heat-sinking capability difference after current a plurality of great power LED aggregate erections, a kind of light emitting semiconductor device forced radiator has been proposed, to solve the rapid problem that lost efficacy of chip that a plurality of high-power LED light sources cause heat accumulation to cause with the power increase.
The utility model is achieved through the following technical solutions:
A kind of light emitting semiconductor device forced radiator comprises pedestal, heat conductive silica gel, heat pipe, radiating fin and high power semi-conductor luminescent device; The top of described pedestal has at least one circular recess that matches with the heat pipe external diameter, scribbles heat conductive silica gel in the circular recess, and circular recess is put in the heat pipe hot junction, and the cold junction of heat pipe is connected with radiating fin, and the pedestal lower end is provided with a plurality of high power semi-conductor luminescent devices.
Be further to realize the purpose of this utility model, described high power semi-conductor luminescent device is installed on the pedestal connecting plate, puts into heat conductive silica gel between pedestal connecting plate and the pedestal, couples together the formation one by screw.Described heat pipe is preferably 2 or 1.
Described pedestal is the square or circular slab that copper or aluminium are made.
Be connected for the mode that closely cooperates or weld between described heat pipe and the base plate.
Described light emitting semiconductor device forced radiator also comprises protective cover and translucent cover; protective cover is arranged on the pedestal periphery, and translucent cover is arranged on the lower end of high power semi-conductor luminescent device, and protective cover is welded on the fin lower end; or be semi-circular structure, protective cover and translucent cover form enclosed construction.
Described a plurality of light emitting semiconductor device is formed square structure or circular configuration.
Described heat pipe is the bend pipe or the bending pipe of opening shape.
With respect to prior art, the present invention has following advantage:
(1) the utility model proposes a kind of light emitting semiconductor device forced radiator, be connected with the tight of heat pipe by pedestal, the heat that a plurality of high power semi-conductor luminescent devices are produced is transmitted to the heat pipe hot junction effectively, is transmitted to fin by heat pipe again and distributes.
(2) the utility model utilization welding or close-fitting mode fuse pedestal and heat pipe by heat conductive silica gel.Pedestal processing is simple, has good heat exchanger effectiveness with the connection side of heat pipe, have in light weight, advantage such as the durable life-span is long, and is simple in structure, and practicality is reliable.
Description of drawings
Fig. 1 is embodiment 1 a light emitting semiconductor device forced radiator structural representation;
Fig. 2 is embodiment 2 light emitting semiconductor device forced radiator structural representations;
Fig. 3 is embodiment 3 light emitting semiconductor device forced radiator structural representations;
Fig. 4 base construction schematic diagram;
Fig. 5 is the square base structural representation;
Fig. 6 is the round base structural representation;
The combination assumption diagram of Fig. 7 side of being plate and plectane pedestal;
Fig. 8 a is the square distribution schematic diagram of light emitting semiconductor device;
Fig. 8 b is a light emitting semiconductor device circular distribution schematic diagram;
Fig. 9 a is an opening shape heat pipe structure schematic diagram;
Fig. 9 b is bending shape heat pipe structure schematic diagram.
Embodiment
Below in conjunction with embodiment the utility model is further described, but execution mode of the present utility model is not limited thereto.
As shown in Figure 1, a kind of light emitting semiconductor device forced radiator comprises pedestal 1, pedestal connecting plate 2, heat conductive silica gel 3, heat pipe 4, radiating fin 5, hold-down screw 6, high power semi-conductor luminescent device 7, protective cover 8, translucent cover 9.Drive two circular recesss that match with the heat pipe external diameter on the top of pedestal 1, put into heat conductive silica gel 3 in the circular recess, circular recess is put in heat pipe 4 hot junctions, the mode by pushing circular trough rim or welding with heat pipe 4 and pedestal 1 firm be connected one, the cold junction of heat pipe 4 is connected with radiating fin 5.Put into heat conductive silica gel 3 between pedestal 1 and the pedestal connecting plate 2, couple together the formation one by screw.Pedestal connecting plate 2 bottoms are provided with a plurality of high power semi-conductor luminescent devices 7, are provided with protective cover 8 at pedestal and pedestal connecting plate 2 peripheries, and the lower end is provided with translucent cover 9, and protective cover 8 can be welded on fin 5 lower ends, and protective cover 8 forms enclosed construction with translucent cover 9.Protective cover 8 is to high power semi-conductor luminescent device and its protective effect of pedestal with the effect of translucent cover 9.Produce a large amount of heats when the high power semi-conductor luminescent device of pedestal connecting plate 2 lower ends is worked like this and be transmitted to heat pipe 4 hot junctions that are connected with pedestal by pedestal connecting plate 2, heat conductive silica gel 3 and pedestal 1, pass to its cold junction by heat pipe 4 again, heat distributes by the radiating fin 5 of heat pipe cold junction again.In the present embodiment, the effect of heat conductive silica gel 3 not only reduces the thermal resistance between pedestal 1 and the heat pipe 4, but also reduces the thermal resistance between pedestal 1 and the pedestal connecting plate 2.Shown in Fig. 8 a, it is square structure that pedestal connecting plate lower plane high power semi-conductor luminescent device is provided with form, also can be depicted as circular configuration as Fig. 8 b.Fig. 5, Fig. 6 is two kinds of forms of pedestal, Fig. 5 is a square plate circular recess structure, Fig. 6 is a circular slab circular recess structure, the present embodiment pedestal can be in these two kinds of structures any one, and present embodiment also can be the combining structure of Fig. 5 and Fig. 6 shown in Figure 7, and a square base shown in Figure 5 promptly is set on round base shown in Figure 6 again, the circular recess of two pedestals matches, and promptly the circular recess of square base is arranged in the circular recess of round base.The structure of heat pipe 4 is the opening bend pipe in the present embodiment shown in Fig. 9 a.Pedestal and pedestal connecting plate are that conductive coefficient higher material copper or aluminium are made.
As shown in Figure 2, a kind of light emitting semiconductor device forced radiator comprises pedestal 1, heat pipe 2, heat conductive silica gel 3, radiating fin 4, high power semi-conductor luminescent device 5, protective cover 6, translucent cover 7.Drive two circular recesss that match with the heat pipe external diameter on the top of pedestal 1, put into heat conductive silica gel 3 in the circular recess, after heat pipe 2 hot junctions are put into circular recess, the mode by pushing circular trough rim or welding with heat pipe 2 and pedestal 1 firm be connected one, the cold junction of heat pipe 2 is connected with radiating fin 4.Pedestal 1 bottom is provided with a plurality of high power semi-conductor luminescent devices 5, is provided with protective cover 6 in the pedestal periphery, and the lower end is provided with translucent cover 7, and protective cover 6 can be welded on fin 4 lower ends, and protective cover 6 forms enclosed construction with translucent cover 7.Protective cover 6 is to high power semi-conductor luminescent device and its protective effect of pedestal with the effect of translucent cover 7.Produce a large amount of heats when pedestal 1 lower plane high power semi-conductor luminescent device is worked like this and be transmitted to the heat pipe hot junction by pedestal, heat distributes by the radiating fin 4 of heat pipe cold junction again.As different from Example 1, in the present embodiment, pedestal 1 is an overall structure, and top links to each other with heat pipe, and the bottom is the fixing structure of high power semi-conductor luminescent device 5, and the effect of heat conductive silica gel 3 is the thermal resistances between minimizing pedestal 1 and the heat pipe 2.Equally, whole base construction can be Fig. 5, a kind of in two kinds of forms of Fig. 6.Fig. 8 is the dual mode of pedestal 1 bottom high power semi-conductor luminescent device fixed structure, can also can be square structure for circular configuration.The structure of heat pipe is the opening bend pipe shown in Fig. 9 a.Pedestal is that conductive coefficient higher material copper or aluminium are made
As shown in Figure 3, a kind of light emitting semiconductor device forced radiator comprises pedestal 1, heat pipe 2, heat conductive silica gel 3, radiating fin 4, high power semi-conductor luminescent device 5, protective cover 6, translucent cover 7.Open a round tube hole that matches with the heat pipe external diameter on the top of pedestal 1, put into heat conductive silica gel 3 in the round tube hole, heat pipe 2 places round tube hole, the mode by welding with heat pipe 2 hot junctions and pedestal 1 firm be connected one, the cold junction of heat pipe 2 is connected with radiating fin 4.Pedestal 1 bottom is provided with a plurality of high power semi-conductor luminescent devices 5, is provided with protective cover 6 in the pedestal periphery, and the lower end is provided with translucent cover 7, and protective cover 6 forms semi-circular structure, and protective cover 6 forms enclosed construction with translucent cover 7.Protective cover 6 is to high power semi-conductor luminescent device and its protective effect of pedestal with the effect of translucent cover 7.Produce a large amount of heats when pedestal 1 lower plane high power semi-conductor luminescent device is worked like this and be transmitted to the heat pipe hot junction by pedestal, heat distributes by the radiating fin 4 of heat pipe cold junction again.In the present embodiment, pedestal 1 is an overall structure, and the top round tube hole links to each other with heat pipe, and the bottom is the fixing structure of high power semi-conductor luminescent device 5, and the effect of heat conductive silica gel 3 is the thermal resistances between minimizing pedestal 1 and the heat pipe 2.Whole base construction is shown in Figure 4, in square pedestal sheet material a bulge-structure is arranged, and is convenient to be provided with round tube hole.Fig. 8 is two kinds of forms that pedestal 1 bottom high power semi-conductor luminescent device is provided with, and can also can be rectangular mode for circular pattern.The structure of heat pipe is the bending pipe shown in Fig. 9 b.Pedestal is that conductive coefficient higher material copper or aluminium are made.
Claims (9)
1, a kind of light emitting semiconductor device forced radiator is characterized in that comprising pedestal, heat conductive silica gel, heat pipe, radiating fin and high power semi-conductor luminescent device; The top of described pedestal has at least one circular recess that matches with the heat pipe external diameter, scribbles heat conductive silica gel in the circular recess, and circular recess is put in the heat pipe hot junction, and the cold junction of heat pipe is connected with radiating fin, and the pedestal lower end is provided with a plurality of high power semi-conductor luminescent devices.
2, light emitting semiconductor device forced radiator according to claim 1, it is characterized in that described high power semi-conductor luminescent device is installed on the pedestal connecting plate, put into heat conductive silica gel between pedestal connecting plate and the pedestal, couple together the formation one by screw.
3, light emitting semiconductor device forced radiator according to claim 1 is characterized in that described heat pipe is 2.
4, light emitting semiconductor device forced radiator according to claim 1 is characterized in that described heat pipe is 1.
5,, it is characterized in that described pedestal is the square or circular slab that copper or aluminium are made according to each described light emitting semiconductor device forced radiator of claim 1～4.
6,, it is characterized in that being connected for the mode that closely cooperates or weld between described heat pipe and the base plate according to each described light emitting semiconductor device forced radiator of claim 1～4.
7, according to each described light emitting semiconductor device forced radiator of claim 1～4; it is characterized in that described light emitting semiconductor device forced radiator also comprises protective cover and translucent cover; protective cover is arranged on the pedestal periphery; translucent cover is arranged on the lower end of high power semi-conductor luminescent device; protective cover is welded on the fin lower end; or be semi-circular structure, protective cover and translucent cover form enclosed construction.
8,, it is characterized in that described a plurality of light emitting semiconductor device composition square structure or circular configuration according to each described light emitting semiconductor device forced radiator of claim 1～4.
9,, it is characterized in that described heat pipe is the bend pipe or the bending pipe of opening shape according to each described light emitting semiconductor device forced radiator of claim 1～4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200431464U CN201163627Y (en) | 2008-01-22 | 2008-01-22 | Forced heat radiating device for semiconductor lighting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200431464U CN201163627Y (en) | 2008-01-22 | 2008-01-22 | Forced heat radiating device for semiconductor lighting device |
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| Publication Number | Publication Date |
|---|---|
| CN201163627Y true CN201163627Y (en) | 2008-12-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008200431464U Expired - Fee Related CN201163627Y (en) | 2008-01-22 | 2008-01-22 | Forced heat radiating device for semiconductor lighting device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101749583A (en) * | 2010-02-11 | 2010-06-23 | 郑日春 | High-power integrated LED lamp |
-
2008
- 2008-01-22 CN CNU2008200431464U patent/CN201163627Y/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101749583A (en) * | 2010-02-11 | 2010-06-23 | 郑日春 | High-power integrated LED lamp |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081210 Termination date: 20120122 |