CN201017896Y - Packaging structure of LED - Google Patents
Packaging structure of LED Download PDFInfo
- Publication number
- CN201017896Y CN201017896Y CNU200620175518XU CN200620175518U CN201017896Y CN 201017896 Y CN201017896 Y CN 201017896Y CN U200620175518X U CNU200620175518X U CN U200620175518XU CN 200620175518 U CN200620175518 U CN 200620175518U CN 201017896 Y CN201017896 Y CN 201017896Y
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- Prior art keywords
- led
- light
- silicon wafer
- insulating oxide
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Abstract
The utility model relates to a LED light emitting diode packaging structure. An aluminium substrate is processed with anodic oxidation process technology, an insulation oxidizing layer forms on the surface, a silicon chip of the LED is directly packaged on the insulation oxidizing layer, a conducting layer is arranged on the insulation oxidizing layer with a silver paste sintering technology, and the silicon chip is connected with the conducting layer through a gold wire electrode. The utility model has the advantages that firstly, the design of the packaging structure is rational, the thermal resistance is greatly reduced, and the optical effect conversion ratio is greatly improved; secondly, the high power LED operating current can be bore, and the LED optical effect and output power are improved; thirdly, the LED is packaged on the aluminium substrate radiator processed the anodic oxidation process, not only the processing steps are reduced, but also the power efficiency is greatly improved and the energy resource is resaved; fourthly, the multi high power LED packaging structures matrix arranging is realized.
Description
Technical field
The utility model relates to a kind of encapsulating structure of LED light-emitting diode, belongs to LED light-emitting diodes pipe manufacturer field.
Background technology
At present, the heat of its generation was not very big when the common rated current of LED of LED Φ 5 under nominal current conditions of low-power LED such as Φ 3, Φ 5, Φ 10 diameters was the 20mA use, and is also not obvious to the performance impact of LED, can not take special measure.But during the great power LED more than using 1W, common rated current is 350mA, must install enough heat abstractors additional, as LED being welded on aluminium base copper-clad plate MetalCore Printed Circuit Board, be called for short on the printed substrate of MCPCB making, by its aluminium base heat is distributed, make LED remain on operate as normal under the suitable temperature conditions, otherwise LED is soon because of crossing cause thermal damage.
With regard to the power of present LED, the use of single LEDs is not enough often, in most cases is to form array with plurality of LEDs to use together.Like this, its caloric value is very considerable and surprising.Have experiment to show, enough as long as cooling measure is done, can strengthen operating current with the LED of spline structure and improve the energy of output light greater than rated current, and LED still can be normally, work reliably.Therefore the radiating effect that how to improve LED is one of valid approach that improves the LED performance.In order to improve radiating effect, different producers has all taked various measures, as adopt ceramic material to do encapsulating structure, be connected and heat eliminating medium as circuit with support and the size of electrode, the printed substrate that adopts aluminium base copper-clad plate to make that improves heat resistanceheat resistant and heat conductivility, increasing silicon wafer, and the thermal resistance that does not adopt the aluminium base copper-clad plate of epoxy copper-clad plate is 1.6 ℃/W, the thermal resistance of epoxy copper-clad plate is 100 ℃/W, and its purpose is exactly the heat radiation of wishing to improve LED, improves power density.Conventional LED assembly structure and heat radiation model are illustrated in fig. 1 shown below: the thermal resistance of this structure is: R
Th=0.28 ℃/W+1.99 ℃/W+1.33 ℃/W+4.00 ℃/W=7.61 ℃/W.For reducing thermal resistance, there is employing that aluminium is done anodized abroad, form oxide layer on its surface with insulation property, printed silver slurry on oxide layer forms circuit by sintering again, has save aluminium base copper-clad plate MCPCB, LED directly is contained on the radiator, as the Anotherm product of the U.S..Its structure and heat radiation model are illustrated in fig. 2 shown below: the thermal resistance of this structure is: R
Th=0.28 ℃/W+0.33 ℃/W+4.00 ℃/W=4.61 ℃/W.
Summary of the invention
Purpose of design: the utility model provide a kind of can reduce thermal resistance LED thermal resistance effectively and can improve effectively the luminous light efficiency of LED encapsulating structure.
Design: the theory of the utility model design: 1, we are as you know, the LED light-emitting diode has energy-efficient, solid-state structure, sturdy and durable, contamination-free, environmental protection, the light of being launched are not with heat, driving voltage is low, be easy to advantages such as control, not only paid close attention to, and be considered to a revolution of lighting field by the world.2, in present illumination field, the light efficiency of LED is about 40lm/W, about doubling than incandescent lamp, Halogen lamp LED; And being about 70lm/W, the light efficiency of trichromatic energy saving lamp exceeds much than LED light efficiency.But, cause the low reason of LED light efficiency, not only be wafer material, fluorescence luminescent material, luminescence mechanism etc., and the encapsulating structure that also has direct restriction light efficiency to change, if encapsulating structure not science, heat is big, LED a big chunk electric energy of being used to convert electric energy to luminous energy will be consumed by thermal resistance so, directly have influence on the conversion of its light efficiency.
As you know, as long as the device that has electric current to flow through just has heat to produce, same LED also can produce heat when working, and these heats not only can influence the luminous efficiency and the power output of LED silicon wafer, and can shorten the useful life of LED greatly.
The utility model just is being based on and the consumption of LED thermal resistance is converted to the luminous light efficiency of LED is designing, in the design of LED encapsulating structure, the utility model mainly comprises aluminium base, the front of aluminium base is the insulating barrier of one deck by anodized, the reverse side formation radiator that stretches out, the silicon wafer of light-emitting diode directly is encapsulated on the insulating barrier, and also be provided with the conductive layer that silver slurry sintering constitutes on the insulating barrier, and the silicon wafer of light-emitting diode is connected with conductive layer by the spun gold electrode, makes it to form a complete low thermal resistance, high light efficiency, the great power LED light-emitting diode.
Technical scheme 1: the encapsulating structure of light-emitting diode, comprise aluminium base (1), described aluminium base (1) adopts the anodized PROCESS FOR TREATMENT and forms one deck insulating oxide (2) at its face, the silicon wafer of LED (4) directly is encapsulated on the insulating oxide (2), insulating oxide (2) is gone up and is adopted silver slurry sintering process to be provided with conductive layer (5), and silicon wafer (4) is connected with conductive layer (5) by spun gold electrode (6).
Technical scheme 2: the illuminating source that constitutes by the encapsulating structure of a plurality of light-emitting diodes, comprise aluminium base (1), described aluminium base (1) adopts the anodized PROCESS FOR TREATMENT and forms one deck insulating oxide (2) at its face, the silicon wafer of a plurality of LED (4) directly is encapsulated on the insulating oxide (2), adopts silver slurry sintering process to be formed on that insulating oxide (2) is gone up and the silicon wafer (4) of a plurality of LED connects and composes the LED light emitting source by spun gold electrode (6) and conductive layer (5) respectively with the conductive layer (5) of the silicon wafer (4) of a plurality of LED coupling.
The utility model is compared with background technology, and the one, encapsulating structure design science is reasonable, and thermal resistance reduces widely, and the light efficiency transfer ratio of its LED improves significantly; The 2nd, can bear the great power LED operating current, improved light efficiency and the power output of LED; The 3rd, LED is encapsulated on the aluminium base radiator of doing anodized, not only reduce processing link, and improve effect, energy savings significantly; The 4th, realized the arranged of many high-power LED encapsulation structures; The 5th, the Anotherm product of the application U.S. is compared, and has reduced by a thermal resistance, its structure and the heat radiation model as shown in Figure 1, the thermal resistance of this structure is: R
Th=0.28 ℃/W+4.00 ℃/W=4.28 ℃/W.Thermal resistance than Anotherm technology minimizing 7%.Because the difference of conditions such as experiment, above data have certain deviation, and the usefulness that only performs an analysis is owing to thermal resistance reduces, and LED can be by increasing the light intensity that operating current improve LED; The 6th, reduced processing link, directly LED is encapsulated on the aluminium base radiator of doing anodized, can improve effect, energy savings significantly.Especially its advantage is more outstanding when LED arranges application with the shape of array.
Description of drawings
Fig. 1 is a package structure for LED schematic diagram of the present utility model.
Fig. 2 is conventional package structure for LED schematic diagram.
Fig. 3 is the package structure for LED schematic diagram that adopts the Anotherm technology.
Embodiment
Embodiment 1: with reference to accompanying drawing 3.The encapsulating structure of light-emitting diode comprises aluminium base 1, and aluminium base 1 is for dull and stereotyped or have a plate of radiator 3, and radiator 3 is by one group or 2 groups or organize fin more and form.Aluminium base 1 adopts the anodized PROCESS FOR TREATMENT and forms one deck insulating oxide 2 at its face, and anodized technology is prior art, is not described herein at this.The silicon wafer 4 of LED directly is encapsulated in (silicon wafer 4 is fixedlyed connected with insulating oxide 2 by adhesive layer 8) on the insulating oxide 2, adopts prior art to be provided with epoxy resin layer 7 on the silicon wafer 4.Adopt silver slurry sintering process to be provided with conductive layer 5 on the insulating oxide 2, silicon wafer 4 is connected with conductive layer 5 by spun gold electrode 6.
Embodiment 2: on the basis of embodiment 1, the front of aluminium base 1 is the insulating barrier 2 (AL that one deck passes through anodized
2O
3Oxide layer), reverse side stretches out and forms radiator 3, and radiator 3 is made up of one group of fin.The silicon wafer 4 of light-emitting diode directly is encapsulated on the insulating barrier 2, and the silicon wafer 4 of light-emitting diode is fixedlyed connected with insulating barrier 2 by adhesive layer 8 in the present embodiment, also is provided with the epoxy resin layer 7 that one deck is used to protect silicon wafer on the silicon wafer 4 of light-emitting diode.Also be provided with the conductive layer 5 of silver slurry sintering on the insulating barrier 2, the silicon wafer 4 of light-emitting diode is connected with conductive layer 5 by spun gold electrode 6.Radiator is made up of one group of fin, also can adopt other structure.
Embodiment 3: the illuminating source that is made of the encapsulating structure of a plurality of light-emitting diodes, comprise aluminium base 1, described aluminium base 1 adopts the anodized PROCESS FOR TREATMENT and forms one deck insulating oxide 2 at its face, the silicon wafer 4 of a plurality of LED directly is encapsulated on the insulating oxide 2, adopts silver slurry sintering process to be formed on the insulating oxide 2 with the conductive layer 5 of silicon wafer 4 coupling of a plurality of LED and the silicon wafer 4 of a plurality of LED connects and composes the LED light emitting source by spun gold electrode 6 and conductive layer 5 respectively.
What need understand is: though the foregoing description is to the utility model detailed explanation of contrasting; but these explanations are just to simple declaration of the present utility model; rather than to restriction of the present utility model; any innovation and creation that do not exceed in the utility model connotation all fall in the protection range of the present utility model.
Claims (6)
1. the encapsulating structure of a light-emitting diode, comprise aluminium base (1), it is characterized in that: described aluminium base (1) adopts the anodized PROCESS FOR TREATMENT and forms one deck insulating oxide (2) at its face, the silicon wafer of LED (4) directly is encapsulated on the insulating oxide (2), insulating oxide (2) is gone up and is adopted silver slurry sintering process to be provided with conductive layer (5), and silicon wafer (4) is connected with conductive layer (5) by spun gold electrode (6).
2. the encapsulating structure of light-emitting diode according to claim 1 is characterized in that: silicon wafer (4) is fixedlyed connected with insulating oxide (2) by adhesive layer (8).
3. the encapsulating structure of light-emitting diode according to claim 1 and 2, it is characterized in that: silicon wafer (4) is provided with epoxy resin layer (7).
4. the encapsulating structure of light-emitting diode according to claim 1 is characterized in that: aluminium base (1) is for dull and stereotyped or have a plate of radiator (3).
5. the encapsulating structure of light-emitting diode according to claim 4 is characterized in that: described radiator (3) is by one group or 2 groups or organize fin more and form.
6. illuminating source that constitutes by the encapsulating structure of a plurality of light-emitting diodes, comprise aluminium base (1), it is characterized in that: described aluminium base (1) adopts the anodized PROCESS FOR TREATMENT and forms one deck insulating oxide (2) at its face, the silicon wafer of a plurality of LED (4) directly is encapsulated on the insulating oxide (2), adopts silver slurry sintering process to be formed on that insulating oxide (2) is gone up and the silicon wafer (4) of a plurality of LED connects and composes the LED light emitting source by spun gold electrode (6) and conductive layer (5) respectively with the conductive layer (5) of the silicon wafer (4) of a plurality of LED coupling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200620175518XU CN201017896Y (en) | 2006-05-30 | 2006-12-31 | Packaging structure of LED |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200620104186 | 2006-05-30 | ||
| CN200620104186.6 | 2006-05-30 | ||
| CNU200620175518XU CN201017896Y (en) | 2006-05-30 | 2006-12-31 | Packaging structure of LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201017896Y true CN201017896Y (en) | 2008-02-06 |
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ID=39058395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU200620175518XU Expired - Fee Related CN201017896Y (en) | 2006-05-30 | 2006-12-31 | Packaging structure of LED |
Country Status (1)
| Country | Link |
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| CN (1) | CN201017896Y (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7914194B2 (en) | 2007-02-27 | 2011-03-29 | Samsung Led Co., Ltd. | Backlight unit having light emititng diodes and method of manufacturing the same |
| CN101545615B (en) * | 2008-03-27 | 2011-05-25 | 佰鸿工业股份有限公司 | Light emitting diode surface light source device |
| CN102184915A (en) * | 2011-04-06 | 2011-09-14 | 周波 | High-power base plate effectively integrating circuit board and radiator and manufacturing method thereof |
| US8154029B2 (en) | 2008-03-25 | 2012-04-10 | Bright Led Electronics Corp. | Planar light source device |
| CN103883907A (en) * | 2014-03-14 | 2014-06-25 | 苏州晶品光电科技有限公司 | High-power LED lighting assembly |
| CN104134745A (en) * | 2014-04-28 | 2014-11-05 | 上虞市宝之能照明电器有限公司 | MCOB (Multi-chips On Board) packaging structure and technology of aluminum base LED (Light Emitting Diode) |
| CN104333981A (en) * | 2014-10-16 | 2015-02-04 | 惠州智科实业有限公司 | Manufacturing method of LED heat radiating substrate and LED module with substrate |
| CN104716252A (en) * | 2015-03-17 | 2015-06-17 | 深圳市华星光电技术有限公司 | Light-emitting device and backlight module |
-
2006
- 2006-12-31 CN CNU200620175518XU patent/CN201017896Y/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7914194B2 (en) | 2007-02-27 | 2011-03-29 | Samsung Led Co., Ltd. | Backlight unit having light emititng diodes and method of manufacturing the same |
| US8154029B2 (en) | 2008-03-25 | 2012-04-10 | Bright Led Electronics Corp. | Planar light source device |
| CN101545615B (en) * | 2008-03-27 | 2011-05-25 | 佰鸿工业股份有限公司 | Light emitting diode surface light source device |
| CN102184915A (en) * | 2011-04-06 | 2011-09-14 | 周波 | High-power base plate effectively integrating circuit board and radiator and manufacturing method thereof |
| CN103883907A (en) * | 2014-03-14 | 2014-06-25 | 苏州晶品光电科技有限公司 | High-power LED lighting assembly |
| CN103883907B (en) * | 2014-03-14 | 2016-06-29 | 苏州晶品光电科技有限公司 | High-power LED illumination assembly |
| CN104134745A (en) * | 2014-04-28 | 2014-11-05 | 上虞市宝之能照明电器有限公司 | MCOB (Multi-chips On Board) packaging structure and technology of aluminum base LED (Light Emitting Diode) |
| CN104134745B (en) * | 2014-04-28 | 2017-02-15 | 绍兴宝之能照明电器有限公司 | MCOB (Multi-chips On Board) packaging technology of aluminum base LED (Light Emitting Diode) |
| CN104333981A (en) * | 2014-10-16 | 2015-02-04 | 惠州智科实业有限公司 | Manufacturing method of LED heat radiating substrate and LED module with substrate |
| CN104716252A (en) * | 2015-03-17 | 2015-06-17 | 深圳市华星光电技术有限公司 | Light-emitting device and backlight module |
| CN104716252B (en) * | 2015-03-17 | 2017-07-21 | 深圳市华星光电技术有限公司 | Light-emitting device and backlight module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080206 Termination date: 20101231 |