CN201748246U - Multi-chip high-power LED light source - Google Patents
Multi-chip high-power LED light source Download PDFInfo
- Publication number
- CN201748246U CN201748246U CN2010202400557U CN201020240055U CN201748246U CN 201748246 U CN201748246 U CN 201748246U CN 2010202400557 U CN2010202400557 U CN 2010202400557U CN 201020240055 U CN201020240055 U CN 201020240055U CN 201748246 U CN201748246 U CN 201748246U
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- heat
- radiating substrate
- light source
- reflection shield
- led light
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Abstract
The utility model discloses a multi-chip high-power LED light source which comprises a heat dissipation base, a reflector arranged on the heat dissipation base, a LED fixedly arranged on the heat dissipation base and arranged inside the reflector, as well as a socket port positioned between the heat dissipation base and the reflector. An electrode connected with the LED is inlayed between the heat dissipation base and the reflector; the tail end of the electrode and the socket port are combined to form a socket; and the heat dissipation base is manufactured by high thermal-conduction metal. In the multi-chip high-power LED light source, the heat dissipation the base, the reflector, an inner circuit and a power supply input plug form a whole body through die casting. Compared with the prior art, the heat dissipation path is shortened; the section area is enlarged; the thermal resistance links are decreased; the light extraction loss is alleviated; the light efficiency is increased and the light spot result is more ideal.
Description
Technical field
The utility model relates to a kind of lighting, relates in particular to a kind of high-power LED light source.
Background technology
LED compares with conventional light source as a kind of new type light source, has advantages such as security is good, rich color, light efficiency height, environmental protection is pollution-free, long service life.The development of its application product to Landscape Lighting, is arrived outdoor lighting from originally instrument and meter indicator lamp rapidly again, has entered into the room lighting field at present.
LED is as semiconductor devices, and To Be Protected from Heat is its intrinsic shortcoming, and especially for high power device, if the heat that produces in the work can not be derived timely and effectively and distributes, the temperature rising of PN junction can cause a series of optical problem of degradation under the light efficiency.And, go out the practicality that light effect then determines product as illumination class device.More than 2 points (heat radiation and bright dipping) become LED and enter the key problem that lighting field institute must solution.The following LED product technology of 3W is ripe relatively at present, and above-described problem has been had solution preferably, but also there is more problem in the above great power LED product of 5W in this issue handling.
The utility model content
The utility model is in order to solve existing poor, the bright dipping weak effect of high-power LED light source heat dispersion, can not satisfy the technical problem of great power LED cooling and bright dipping, provide a kind of thermal diffusivity good, can realize well going out light effect, the heat-radiating substrate reverse side can with the complete multi-chip high power led light source that combines of user's radiator.
For addressing the above problem, the technical solution of the utility model is a kind of multi-chip high power led light source of structure, comprise heat-radiating substrate, be located at the reflection shield on this heat-radiating substrate, be installed on the heat-radiating substrate and be located at LED in the reflection shield, be located at the socket port between heat-radiating substrate and the reflection shield, be embedded with the electrode that is connected with LED between heat-radiating substrate and the reflection shield, this electrode tail end combines with the socket port and forms socket.Total forms an integral body by the mode of die casting.
Described electrode ringwise, described heat-radiating substrate is provided with the insulating barrier with described electrode and described heat-radiating substrate mutually insulated, described heat-radiating substrate side wall surface is provided with the rectangle draw-in groove, described socket port is fixed in the described draw-in groove.
Described reflection shield profile in the form of a ring, the internal face of described reflection shield is the camber inclined-plane, described reflection shield is provided with and the adaptive breach of described socket port external form.
Described heat-radiating substrate is provided with many groups and arranges the LED group that is lattice-like by described LED, and the back of connecting mutually of the described LED in every group is connected with described electrode.
Described heat-radiating substrate is that high-thermal conductive metal is made.
Described reflection shield is that plastic material is made.
Described heat-radiating substrate, reflection shield, electrode, insulating barrier, rectangle draw-in groove and socket port etc. form an integral body by die casting.
Light source in the utility model adopts high-thermal conductive metal to do heat-radiating substrate and get rid of the support heating column, compared with prior art makes heat dissipation path shortening, the increase of heat radiation sectional area and has eliminated the very big intermediate link of thermal resistance.Simultaneously, adopt the mode that embeds circuit board in the heat-radiating substrate, directly produce electrode on the circuit board and do connection between the LED group, by socket the power supply supply lines is drawn at last.The socket installation site makes the heat-radiating substrate reverse side can realize reaching 100% with user's radiator faying face, has effectively reduced thermal resistance, and simultaneously light source carries reflection shield and can use light effect and reach the desirable rich type of thinkling sound.The utility model increases by LED lamp single source power, and light decay reduces, and goes out light effect and promotes significantly, and it is more convenient to use, and makes LED better enter the high-power illumination field.
Description of drawings
Below in conjunction with drawings and Examples the utility model is described further, wherein:
Fig. 1 is existing LED modulated structure schematic views;
Fig. 2 is the utility model preferred embodiment LED wiring schematic diagram;
Fig. 3 is the cut-away illustration of Fig. 2.
The specific embodiment
Fig. 1,2,3 shows the basic structure of the utility model preferred embodiment, described multi-chip high power led light source, it comprises the heat-radiating substrate of being made by high-thermal conductive metal (copper material or aluminium) 2, be located at the reflection shield of making by plastic material 3 on this heat-radiating substrate 2, be installed on the heat-radiating substrate 2 and be located at LED4 in the reflection shield 3.Between heat-radiating substrate and reflection shield 3, be provided with socket port 6, and also be embedded with the ringwise electrode 5 that is connected with LED 3 between heat-radiating substrate 2 and the reflection shield 3, these electrode 5 tail ends combine with socket port 6 and form socket, heat-radiating substrate 2 is provided with and makes the insulating barrier (not shown) of electrode 5 and heat-radiating substrate 2 mutually insulateds, and a whole set of structure fabrication is in aggregates.Heat-radiating substrate 2 side wall surfaces are provided with rectangle draw-in groove 8, and socket port 6 is fixed in this draw-in groove 8.Reflection shield 3 profiles in the form of a ring, inner wall surface thereof is the camber inclined-plane, reflection shield 3 is provided with the breach 9 adaptive with socket port 6 external forms.In the present embodiment, heat-radiating substrate 2 is provided with many groups and arranges the LED4 group that is lattice-like by LED4, and the back of connecting mutually of the LED4 in every group is connected with electrode 5.By socket port 6 the power supply supply lines is drawn at last, the plug insertion socket mouth can be realized the LED power supply.Described heat-radiating substrate 2, reflection shield 3, electrode 5, insulating barrier, rectangle draw-in groove 8 and socket port 6 can form an overall structure by die casting.
Compared with prior art the utility model increases heat dissipation path shortening, heat radiation sectional area; The socket installation site makes the heat-radiating substrate reverse side can realize reaching 100% with user's radiator faying face, has effectively reduced thermal resistance, and simultaneously light source carries reflection shield and can use light effect and reach the desirable rich type of thinkling sound. The utility model is by LED lamp single source the increase of output power, and light decay reduces, and goes out light effect and promotes significantly, and it is more convenient to use, and makes LED better enter the high-power illumination field.
Claims (7)
1. multi-chip high power led light source, it is characterized in that: comprise heat-radiating substrate (2), be located at the reflection shield (3) on this heat-radiating substrate (2), be installed in heat-radiating substrate (2) and go up and be located at the interior LED (4) of reflection shield (3), be located at the socket port (6) between heat-radiating substrate and the reflection shield (3), also be embedded with the electrode (5) that is connected with LED (3) between heat-radiating substrate (2) and the reflection shield (3), this electrode (5) tail end combines with socket port (6) and forms socket, and a whole set of structure fabrication is integral.
2. multi-chip high power led light source according to claim 1, it is characterized in that: described electrode (5) ringwise, described heat-radiating substrate (2) is provided with and makes the insulating barrier of electrode (5) and heat-radiating substrate (2) mutually insulated, heat-radiating substrate (2) side wall surface is provided with rectangle draw-in groove (8), and described socket port (6) is fixed in this draw-in groove (8).
3. multi-chip high power led light source according to claim 1 and 2, it is characterized in that: described reflection shield (3) profile in the form of a ring, the internal face of this reflection shield (3) is the camber inclined-plane, and reflection shield (3) is provided with the breach (9) adaptive with described socket port (6) external form.
4. multi-chip high power led light source according to claim 1 and 2, it is characterized in that: described heat-radiating substrate (2) is provided with many groups and arranges LED (4) group that is lattice-like by described LED (4), and the described LED (4) in every group is connected with described electrode (5) the series connection back mutually.
5. multi-chip high power led light source according to claim 1 and 2 is characterized in that: described heat-radiating substrate (2) is made for high-thermal conductive metal.
6. multi-chip high power led light source according to claim 1 and 2 is characterized in that: described reflection shield (3) is made for plastic material.
7. multi-chip high power led light source according to claim 1 and 2 is characterized in that: described heat-radiating substrate (2), reflection shield (3), electrode (5), insulating barrier, rectangle draw-in groove (8) and socket port (6) form an integral body by die casting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202400557U CN201748246U (en) | 2010-06-25 | 2010-06-25 | Multi-chip high-power LED light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202400557U CN201748246U (en) | 2010-06-25 | 2010-06-25 | Multi-chip high-power LED light source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201748246U true CN201748246U (en) | 2011-02-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202400557U Expired - Fee Related CN201748246U (en) | 2010-06-25 | 2010-06-25 | Multi-chip high-power LED light source |
Country Status (1)
| Country | Link |
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| CN (1) | CN201748246U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102214653A (en) * | 2011-05-31 | 2011-10-12 | 宁波市鄞州雷迈半导体科技有限公司 | Packaging structure of high-power LED (light-emitting diode) chip |
| CN102818151A (en) * | 2012-07-23 | 2012-12-12 | 贵州光浦森光电有限公司 | Universal type LED (light emitting diode) bulb forming method and LED bulb with fluorescent inner cover |
| US9791141B2 (en) | 2013-04-25 | 2017-10-17 | Philips Lighting Holding B.V. | Light emitting diode module |
-
2010
- 2010-06-25 CN CN2010202400557U patent/CN201748246U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102214653A (en) * | 2011-05-31 | 2011-10-12 | 宁波市鄞州雷迈半导体科技有限公司 | Packaging structure of high-power LED (light-emitting diode) chip |
| CN102214653B (en) * | 2011-05-31 | 2013-02-13 | 宁波市鄞州雷迈半导体科技有限公司 | Packaging structure of high-power LED (light-emitting diode) chip |
| CN102818151A (en) * | 2012-07-23 | 2012-12-12 | 贵州光浦森光电有限公司 | Universal type LED (light emitting diode) bulb forming method and LED bulb with fluorescent inner cover |
| US9791141B2 (en) | 2013-04-25 | 2017-10-17 | Philips Lighting Holding B.V. | Light emitting diode module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: Buji street, Longgang District of Shenzhen city cloth Lan Road 518000 Guangdong province No. 135 Gan Li six road No. 9 Patentee after: Shenzhen Hoyol Opto Electronic Co., Ltd. Address before: 518000 Guangdong city of Shenzhen province Baoan District Guanlan Fumin Zhen Dan Keng Cun Yun Tang Industrial Zone 8 Patentee before: Hongya Photoelectronics Co., Ltd., Shenzhen City |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110216 Termination date: 20190625 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |